CN102222780A - Manufacturing method of active matrix-type organic LED (Light Emitting Diode) device - Google Patents
Manufacturing method of active matrix-type organic LED (Light Emitting Diode) device Download PDFInfo
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- CN102222780A CN102222780A CN2011101519820A CN201110151982A CN102222780A CN 102222780 A CN102222780 A CN 102222780A CN 2011101519820 A CN2011101519820 A CN 2011101519820A CN 201110151982 A CN201110151982 A CN 201110151982A CN 102222780 A CN102222780 A CN 102222780A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 76
- 238000000059 patterning Methods 0.000 claims description 32
- 239000011159 matrix material Substances 0.000 claims description 28
- 229920001621 AMOLED Polymers 0.000 claims description 18
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 238000004383 yellowing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention provides a manufacturing method of an active matrix-type organic LED (Light Emitting Diode) device, comprising the following steps of: depositing an ITO (Indium Tin Oxide) film and a first metal layer continuously on a substrate, and forming figures of a grid electrode and a positive electrode through a first figure forming process; depositing a gate insulating layer, a semiconductor material layer and a protecting film material layer continuously, and forming a semiconductor layer and a channel protecting layer through a second figure forming process; exposing out the first metal layer of a pixel area through a third figure forming process, and simultaneously forming the figure for the semiconductor layer and the channel protecting layer; continuously depositing a second metal layer to form a source/drain electrode; exposing the positive electrode through a fourth figure forming process; and depositing a flat layer and exposing out the positive electrode through a fifth figure forming process. The application of the manufacturing method can avoid the problem of color cast, and the manufacturing method can save the working procedures and is convenient for processing procedure.
Description
Technical Field
The present invention relates to a method of manufacturing an active matrix type organic light emitting diode (AMOLED) device, and more particularly, to a method of manufacturing an active matrix type organic light emitting diode (AMOLED) device.
Background
An Active Matrix type Organic Light Emitting Diode (AMOLED) device is a new type of flat panel display device. Conventional Liquid Crystal Displays (LCDs), which do not emit light by themselves, require a backlight. The active matrix type organic light emitting diode (AMOLED) device has a light emitting function itself, and is a self-light emitting device, so that the active matrix type organic light emitting diode (AMOLED) device can be made thinner and lighter than an LCD, and can save power. In addition, the active matrix type organic light emitting diode (AMOLED) device has the characteristics of fast response speed, higher contrast ratio, wider viewing angle and the like.
When the OLED having the TFT is driven in an active matrix manner, the same brightness can be obtained at each pixel by applying a relatively low current, and thus, the AMOLED device has low power consumption, high resolution, and a product thereof can have a large size.
At present, when an active matrix type organic light emitting diode (AMOLED) device is manufactured in the prior art, a flat layer is deposited and formed first, and then an anode is formed, so that light generated by an OLED itself must pass through the flat layer from the anode downwards, and a phenomenon of photoyellowing is easily generated, which causes a color cast problem of the AMOLED device, and thus, the imaging quality of the AMOLED device is affected.
In view of the above, it is an urgent need in the art to provide a method for manufacturing an Active Matrix Organic Light Emitting Diode (AMOLED) device that can avoid yellowing of light from an anode through a planarization layer to eliminate color shift caused by the yellowing.
Disclosure of Invention
The invention provides a method for manufacturing an active matrix type organic light emitting diode (AMOLED) device, which aims at solving the problem that the color cast is caused because light rays need to pass through a flat layer from an anode to the bottom in the active matrix type organic light emitting diode (AMOLED) device manufactured in the prior art.
According to an aspect of the present invention, there is provided a method of manufacturing an active matrix type organic light emitting diode device, comprising the steps of: continuously depositing an ITO film and a first metal layer on a substrate, and forming a pattern of a grid and an anode through a first composition process; then continuously depositing a gate insulating layer, a semiconductor material layer and a protective film material layer, and forming a semiconductor layer and a channel protective layer through a second composition process; exposing the first metal layer of the pixel area through a third composition process, and simultaneously performing composition on the semiconductor layer and the channel protection layer; continuing to deposit a second metal layer to form a source/drain electrode; exposing the anode through a fourth patterning process; a planarization layer is then deposited and the anode is exposed by a fifth patterning process.
Preferably, the lower electrode of the storage capacitor is simultaneously formed in step a.
Preferably, the upper electrode of the storage capacitor is simultaneously formed in step d.
Preferably, the first patterning process may employ photolithography or etching with aluminate and oxalate.
Preferably, the second patterning process may simultaneously use photolithography, dry etching and oxalic acid etching, or only use dry etching.
Preferably, the third patterning process may employ photolithography or dry etching.
Preferably, the fourth and fifth first patterning processes may employ wet etching.
Preferably, a step of depositing a passivation layer is further included between steps e and f.
Preferably, the first metal layer may be made of metallic aluminum, molybdenum, or a combination thereof.
Preferably, the metal contact region and the pad region may be formed simultaneously.
The invention has the advantages that: the ITO film of the pixel area of the active matrix type organic light emitting diode device is deposited before the flat layer, so that the formed anode is positioned below the flat layer, and light does not need to pass through the flat layer when running downwards from the anode, thereby avoiding the problem of color cast caused by yellowing through the flat layer. In addition, the manufacturing procedures are reduced, and the manufacturing process is convenient.
Drawings
The various aspects of the present invention will become more apparent to the reader after reading the detailed description of the invention with reference to the attached drawings. Wherein,
fig. 1 is a cross-sectional view illustrating an active matrix type organic light emitting diode device manufactured in the related art;
fig. 2 to 6 are cross-sectional views illustrating stages of an active matrix type organic light emitting diode device according to an embodiment of the present invention.
Fig. 7 to 13 are sectional views illustrating stages of an active matrix type organic light emitting diode device according to another embodiment of the present invention.
Detailed Description
Embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
Fig. 1 shows a cross-sectional view of an active matrix type organic light emitting diode device manufactured in the related art. Referring to fig. 1, the planarization layer 10 is formed under the anode 20, and when light from the light emitting layer (not shown) passes through the anode 20 and then passes down through the planarization layer 10, a photoyellowing phenomenon occurs, which causes a color shift problem of the active matrix organic light emitting diode device, thereby affecting the image quality of the active matrix organic light emitting diode device.
Fig. 2 to 6 are cross-sectional views illustrating stages of an active matrix type organic light emitting diode device according to an embodiment of the present invention. In the following description, the processes of the present invention include resist coating, masking, exposure, etching, and the like. Referring first to fig. 2, an ITO film 110 and a first metal layer 120 are sequentially deposited on a substrate 100 using a magnetron sputtering method or a thermal evaporation method. The substrate 100 may be a glass substrate, and the first metal layer 120 is made of metallic aluminum, molybdenum, or a combination thereof.
Referring to fig. 3, the first metal layer 120 and the ITO film 110 are patterned by a first patterning process, and as can be seen from fig. 3, a gate electrode 121, an anode electrode 111 and a lower electrode 122 are respectively formed in the switching TFT region 1, the pixel region 2 and the storage capacitor region 3 on the substrate 100, and corresponding patterns may be formed in the routing region 4 and the pad region 5. In this embodiment, the first patterning process is performed by photolithography, and in another embodiment, aluminum acid and oxalic acid etching may be performed.
With continued reference to fig. 4, on the substrate 100 having completed the image shown in fig. 3, a gate insulating layer 130, a semiconductor material 140 and a protective film material 150 are sequentially deposited by a plasma enhanced chemical vapor deposition (PECVA) method, thereby forming the image shown in fig. 4. The gate insulating layer 130 may be made of silicon dioxide, and the semiconductor material 140 may be a transparent amorphous oxide IGZO (In-Ga-Zn-O).
Referring next to fig. 5, the gate insulating layer 130, the semiconductor material (not shown), and the protective film material (not shown) are then patterned by a second patterning process. In this embodiment, dry etching is used in the second patterning process. As shown in fig. 5, after the second patterning process, the gate insulating layer 130 covers the entire substrate 100, the semiconductor material and the protective film material outside the switching TFT region 1 are completely etched away, and only the semiconductor material and the protective film material in the TFT region 1 are left to form the semiconductor layer 141 and the channel protection layer 151.
Fig. 6 is a cross-sectional view of the active matrix type organic light emitting diode device after a third patterning process according to the present invention. Following the previous steps, on the substrate 100 where the image shown in fig. 5 is completed, the semiconductor layer 141 and the channel protection layer 151 of the switching TFT region 1 are patterned through a third patterning process while the pixel region is patterned. Wherein, the third composition process adopts photoetching, and in other embodiments, dry etching can also be adopted. As can be seen from fig. 6, after the third patterning process, the channel protective layer 151 is narrower than the semiconductor layer 141, and the gate insulating layer of the pixel region 2 is etched away to expose the first metal layer 120. While the gate insulating layer of the pad region 5 is also etched away.
Referring now to fig. 7, following the above steps, on the substrate 100 where the image shown in fig. 6 is completed, the deposition of the second metal layer 160 is continued, forming the image shown in fig. 7. Wherein the second metal layer 160 may be made of metallic aluminum, molybdenum, or a combination thereof.
Fig. 8 is a cross-sectional view of the active matrix organic light emitting diode device after a fourth patterning process. Following the previous steps, the second metal layer 160 is patterned using a fourth patterning process. As can be seen from fig. 8, after the fourth patterning process, the source electrode 161, the drain electrode 162 and the upper electrode 163 are formed in the switching TFT region 1 and the storage capacitor region 3, and the routing region 4 and the pad region 5 may be patterned correspondingly. In addition, the gate insulating layer 130 positioned in the pixel region 2 is also simultaneously etched away by the fourth patterning process, exposing the anode 111.
Fig. 9 is a cross-sectional view of the active matrix type organic light emitting diode device after a fifth patterning process according to the present invention. On the substrate 100 having completed the image shown in fig. 8, the deposition of the planarization layer 170 is continued, and then the planarization layer is patterned by a fifth patterning process to form the structure shown in fig. 9. As can be seen from fig. 9, after the fifth patterning process, the planarization layer of the pixel region 2 is etched away, completely exposing the anode 111. Therefore, when the light comes out from the anode, the light does not need to pass through the flat layer, and the problem of color cast caused by yellowing can be avoided. Meanwhile, the flat layer of the pad area is also etched, so that welding is facilitated.
FIGS. 10 to 13 are sectional views illustrating partial stages of an active matrix type organic light emitting diode device according to another embodiment of the present invention. In this embodiment, the previous manufacturing steps are the same as those in the previous embodiment, except that a passivation layer 180 is deposited on the image after the fourth patterning process, as shown in fig. 10, the passivation layer 180 completely covers the entire substrate. Thus, a passivation layer is interposed between the source electrode 161, the drain electrode 162, and the upper electrode 163 and the planarization layer 170, so that moisture can be prevented and the stability of the switching TFT can be further increased.
Referring next to FIG. 11, after completing the patterning of FIG. 10, the deposition of planarization layer 170 is continued to form the image shown in FIG. 11, covering the entire substrate with planarization layer 170.
Then, referring to fig. 12, the above-completed pattern is then patterned through a fifth patterning process, and the planarization layer 170 at the pixel region 2 is etched and simultaneously the planarization layer 170 at the pad region 5 is etched away together. As can be seen from fig. 12, after the fifth patterning process, the planarization layer 170 of the pixel region 2 is etched away.
Referring finally to fig. 13, after the pattern shown in fig. 12 is completed, the passivation layer 180 of the pixel region 2 is continuously etched while the passivation layer 180 at the pad region 5 is etched. This etching does not require a mask but is performed by plasma etching. As can be seen from fig. 13, after the plasma etching, the passivation layer 180 of the pixel region 2 is etched to completely expose the anode 111. Therefore, when light comes out of the anode 111, it does not pass through the planarization layer 170, so that yellowing does not occur, which avoids the color shift problem.
When the invention is adopted, because the ITO film of the pixel area of the active matrix type organic light-emitting diode device is deposited before the flat layer, the formed anode is positioned below the flat layer, and the problem of color cast caused by yellowing generated by the flat layer is avoided as light runs downwards from the anode without passing through the flat layer. In addition, the manufacturing procedures are reduced, and the manufacturing process is convenient.
Hereinbefore, specific embodiments of the present invention are described with reference to the drawings. However, those skilled in the art will appreciate that various modifications and substitutions can be made to the specific embodiments of the present invention without departing from the spirit and scope of the invention. Such modifications and substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (10)
1. A method for manufacturing an active matrix organic light emitting diode device, comprising the steps of:
a, continuously depositing an ITO film and a first metal layer on a substrate, and forming a pattern of a grid electrode and an anode by a first composition process;
b, continuously depositing a gate insulating layer, a semiconductor material layer and a protective film material layer, and forming a semiconductor layer and a channel protective layer by a second composition process;
c, exposing the first metal layer of the pixel region through a third composition process, and simultaneously performing composition on the semiconductor layer and the channel protection layer;
d, continuously depositing a second metal layer to form a source/drain electrode;
e exposing the anode through a fourth patterning process; and
f followed by deposition of a planarization layer exposing the anode by a fifth patterning process.
2. The method of manufacturing an active matrix type organic light emitting diode device as claimed in claim 1, wherein a lower electrode of the storage capacitor is simultaneously formed in the step a.
3. The method of manufacturing an active matrix type organic light emitting diode device as claimed in claim 1, wherein an upper electrode of the storage capacitor is simultaneously formed in the step d.
4. The method of manufacturing an active matrix type organic light emitting diode device as claimed in claim 1, wherein the first patterning process may use photolithography or etching with aluminate and oxalate.
5. The method of claim 1, wherein the second patterning process is performed by photolithography, dry etching, and oxalic acid etching, or only dry etching.
6. The method of manufacturing an active matrix type organic light emitting diode device as claimed in claim 1, wherein the third patterning process may employ photolithography or dry etching.
7. The method of manufacturing an active matrix type organic light emitting diode device as claimed in claim 6, wherein the fourth patterning process and the fifth patterning process may use wet etching.
8. The method of claim 1, further comprising a step of depositing a passivation layer between the steps e and f.
9. The method of manufacturing an active matrix type organic light emitting diode device as claimed in claim 1, wherein the first metal layer may be made of metal aluminum, molybdenum or a combination thereof.
10. The method of claim 1, wherein the metal contact region and the pad region are patterned at the same time.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101519820A CN102222780A (en) | 2011-06-01 | 2011-06-01 | Manufacturing method of active matrix-type organic LED (Light Emitting Diode) device |
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| CN2011101519820A CN102222780A (en) | 2011-06-01 | 2011-06-01 | Manufacturing method of active matrix-type organic LED (Light Emitting Diode) device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441137A (en) * | 2013-04-24 | 2013-12-11 | 友达光电股份有限公司 | Electroluminescent display panel and manufacturing method thereof |
| CN107293554A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of top-emitting OLED panel |
| CN113348558A (en) * | 2019-11-21 | 2021-09-03 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
-
2011
- 2011-06-01 CN CN2011101519820A patent/CN102222780A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441137A (en) * | 2013-04-24 | 2013-12-11 | 友达光电股份有限公司 | Electroluminescent display panel and manufacturing method thereof |
| CN103441137B (en) * | 2013-04-24 | 2015-10-28 | 友达光电股份有限公司 | Electroluminescent display panel and manufacturing method thereof |
| CN107293554A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of top-emitting OLED panel |
| CN113348558A (en) * | 2019-11-21 | 2021-09-03 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
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Application publication date: 20111019 |