CN112786675A - Method for manufacturing high-resolution micro-display capable of improving optical crosstalk - Google Patents
Method for manufacturing high-resolution micro-display capable of improving optical crosstalk Download PDFInfo
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- CN112786675A CN112786675A CN202110212106.8A CN202110212106A CN112786675A CN 112786675 A CN112786675 A CN 112786675A CN 202110212106 A CN202110212106 A CN 202110212106A CN 112786675 A CN112786675 A CN 112786675A
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- optical crosstalk
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- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 22
- 239000004642 Polyimide Substances 0.000 claims abstract description 14
- 229920001721 polyimide Polymers 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 238000001020 plasma etching Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 238000000059 patterning Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 7
- 230000000149 penetrating effect Effects 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 239000003292 glue Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention discloses a method for manufacturing a high-resolution micro-display for improving optical crosstalk, which comprises the following steps of: preparing an anode on the driving circuit substrate; coating and curing PDL layer black photoresist; coating, exposing and developing the high-resolution photoresist; etching; evaporating an organic light-emitting layer and a cathode; depositing an encapsulation layer; preparing a red filter layer, a green filter layer and a blue filter layer; and preparing the optical filter protection layer. The black PDL layer with the thickness less than or equal to 0.5um can be prepared by using a black polyimide material to replace silicon oxide, silicon nitride or a common polyimide material and using high-resolution photoresist patterning and an oxygen plasma etching process, so that the aims of preventing light from penetrating to adjacent pixels, improving optical crosstalk and improving color gamut are fulfilled, and meanwhile, the application of high-resolution micro-display is met.
Description
Technical Field
The invention relates to the technical field of displays, in particular to a manufacturing method of a high-resolution micro-display for improving optical crosstalk.
Background
Currently, in a high-resolution microdisplay, as the size of pixels is reduced, optical crosstalk between pixels becomes more severe, resulting in a low color gamut. In the existing high-resolution micro-display, light is reflected on a metal anode to cause crosstalk of light to adjacent pixels, so that the pixels in adjacent dark states emit light; or because both pixels are illuminated adjacent where the pixel edges overlap, the intensity of the illumination is stronger resulting in brighter pixel edges.
A common Pixel Definition Layer (PDL), such as silicon oxide, silicon nitride, and photosensitive polyimide material (organic glue or PI glue), has a relatively good light transmittance, and cannot prevent light from penetrating to an adjacent Pixel, and thus cannot solve the optical crosstalk problem. The black photosensitive polyimide material (black organic glue) can prevent light from penetrating to adjacent pixels and improve the problem of optical crosstalk, but the resolution of the black organic glue is poor, the conventional coating, exposing and developing process can only achieve the line width of 2-3um, the line width can not be less than or equal to 0.5um, and the black photosensitive polyimide material can not be applied to high-resolution micro-display.
Disclosure of Invention
Aiming at the defects in the prior art, the technical problem to be solved by the invention is to provide a method for manufacturing a high-resolution microdisplay capable of improving optical crosstalk, and the method can be used for manufacturing a high-resolution microdisplay optical crosstalk improvement structure.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
the manufacturing method of the optical crosstalk improvement high-resolution micro-display comprises the following steps:
s1: preparing an anode on the driving circuit substrate;
s2: coating and curing PDL layer black photoresist;
s3: coating, exposing and developing the high-resolution photoresist;
s4: etching;
s5: evaporating an organic light-emitting layer and a cathode;
s6: depositing an encapsulation layer;
s7: preparing a red filter layer, a green filter layer and a blue filter layer;
s8: and preparing the optical filter protection layer.
Wherein,
the curing temperature is controlled at 200-300 ℃.
The etching adopts dry etching and then adopts wet stripping or ashing.
In the step S7, the red filter layer, the green filter layer, and the blue filter layer are sequentially manufactured.
The black photoresist is black polyimide photoresist.
The dry etching adopts oxygen plasma etching.
In the manufacturing method, the line width of the prepared black PDL layer is less than or equal to 0.5um by using the black polyimide photoresist as the PDL layer and using a high-resolution photoresist patterning process.
Compared with the prior art, the invention has the following advantages:
the manufacturing method of the optical crosstalk improvement high-resolution micro-display is reasonable in design, the black polyimide material is used for replacing silicon oxide, silicon nitride or a common polyimide material, the high-resolution photoresist imaging and the oxygen plasma etching process are used, the black PDL layer with the thickness less than or equal to 0.5um can be prepared, light is prevented from penetrating to adjacent pixels, the optical crosstalk is improved, the color gamut is improved, and meanwhile the high-resolution micro-display application is met.
Drawings
The contents of the description and the references in the drawings are briefly described as follows:
FIG. 1 is a schematic diagram of a display layer structure according to the present invention.
FIG. 2 is a schematic view of a manufacturing process of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings.
As shown in fig. 1 and fig. 2, the method for manufacturing a microdisplay with improved optical crosstalk and high resolution includes the following steps:
preparing an anode on the driving circuit substrate;
coating and curing PDL layer black photoresist;
coating, exposing and developing the high-resolution photoresist;
etching;
manufacturing a light emitting layer and a cathode;
depositing an encapsulation layer;
preparing a red filter layer, a green filter layer and a blue filter layer;
and preparing the optical filter protection layer.
Wherein,
the black photoresist is black polyimide glue, the black polyimide glue is coated, is baked and cured at the temperature of 200-300 ℃, and is coated, exposed and developed by adopting high-resolution photoresist.
Dry etching is adopted for etching, and then wet stripping or ashing is adopted; preferably, the dry etching is performed by oxygen plasma etching; specifically, oxygen plasma etching is adopted, and then wet stripping or ashing is adopted.
The luminescent layer is an organic luminescent layer, and cathode evaporation is adopted for cathode production; the red filter layer, the green filter layer and the blue filter layer are sequentially manufactured.
In the manufacturing method, black polyimide photoresist is used as a PDL layer, and a high-resolution photoresist patterning process is used, so that the line width of the prepared black PDL layer is less than or equal to 0.5 um; the purposes of preventing light from penetrating to adjacent pixels, improving optical crosstalk and improving color gamut are achieved, and meanwhile high-resolution micro-display application is met.
The invention is described above with reference to the accompanying drawings, it is obvious that the specific implementation of the invention is not limited by the above-mentioned manner, and it is within the scope of the invention to adopt various insubstantial modifications of the inventive concept and solution, or to apply the inventive concept and solution directly to other applications without modification.
Claims (7)
1. A method for manufacturing a high-resolution micro-display capable of improving optical crosstalk is characterized by comprising the following steps: the manufacturing method comprises the following steps:
s1: preparing an anode on the driving circuit substrate;
s2: coating and curing PDL layer black photoresist;
s3: coating, exposing and developing the high-resolution photoresist;
s4: etching;
s5: evaporating an organic light-emitting layer and a cathode;
s6: depositing an encapsulation layer;
s7: preparing a red filter layer, a green filter layer and a blue filter layer;
s8: and preparing the optical filter protection layer.
2. The method of fabricating an improved optical crosstalk high resolution microdisplay of claim 1 in which: the curing temperature is controlled at 200-300 ℃.
3. The method of fabricating an improved optical crosstalk high resolution microdisplay of claim 1 in which: the etching adopts dry etching and then adopts wet stripping or ashing.
4. The method of fabricating an improved optical crosstalk high resolution microdisplay of claim 1 in which: in the step S7, the red filter layer, the green filter layer, and the blue filter layer are sequentially manufactured.
5. The method of fabricating an improved optical crosstalk high resolution microdisplay of claim 1 in which: the black photoresist is black polyimide photoresist.
6. A method of fabricating an improved optical crosstalk high resolution microdisplay according to claim 3 in which: the dry etching adopts oxygen plasma etching.
7. The method of fabricating an improved optical crosstalk high resolution microdisplay of claim 6 in which: in the manufacturing method, the line width of the prepared black PDL layer is less than or equal to 0.5um by using the black polyimide photoresist as the PDL layer and using a high-resolution photoresist patterning process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110212106.8A CN112786675A (en) | 2021-02-25 | 2021-02-25 | Method for manufacturing high-resolution micro-display capable of improving optical crosstalk |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110212106.8A CN112786675A (en) | 2021-02-25 | 2021-02-25 | Method for manufacturing high-resolution micro-display capable of improving optical crosstalk |
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| CN112786675A true CN112786675A (en) | 2021-05-11 |
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| CN202110212106.8A Pending CN112786675A (en) | 2021-02-25 | 2021-02-25 | Method for manufacturing high-resolution micro-display capable of improving optical crosstalk |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113903875A (en) * | 2021-11-18 | 2022-01-07 | 安徽熙泰智能科技有限公司 | Manufacturing method of color OLED display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW499622B (en) * | 2000-04-26 | 2002-08-21 | Ritdisplay Corp | Method for fabricating an anti-glare pixel-defining layer on an OLED panel |
| CN101017214A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Manufacturing method of high-resolution self-supporting full-hollowed-out transmission grating |
| CN103137469A (en) * | 2011-11-22 | 2013-06-05 | 上海华虹Nec电子有限公司 | Method for manufacturing non-photosensitive polyimide passivation layer |
| CN105336881A (en) * | 2015-11-04 | 2016-02-17 | Tcl集团股份有限公司 | Printing type high-resolution display device and manufacturing method thereof |
| CN107819083A (en) * | 2017-11-30 | 2018-03-20 | 京东方科技集团股份有限公司 | Color membrane substrates, its preparation method, display panel and display device |
| CN110993674A (en) * | 2019-12-18 | 2020-04-10 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
-
2021
- 2021-02-25 CN CN202110212106.8A patent/CN112786675A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW499622B (en) * | 2000-04-26 | 2002-08-21 | Ritdisplay Corp | Method for fabricating an anti-glare pixel-defining layer on an OLED panel |
| CN101017214A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Manufacturing method of high-resolution self-supporting full-hollowed-out transmission grating |
| CN103137469A (en) * | 2011-11-22 | 2013-06-05 | 上海华虹Nec电子有限公司 | Method for manufacturing non-photosensitive polyimide passivation layer |
| CN105336881A (en) * | 2015-11-04 | 2016-02-17 | Tcl集团股份有限公司 | Printing type high-resolution display device and manufacturing method thereof |
| CN107819083A (en) * | 2017-11-30 | 2018-03-20 | 京东方科技集团股份有限公司 | Color membrane substrates, its preparation method, display panel and display device |
| CN110993674A (en) * | 2019-12-18 | 2020-04-10 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113903875A (en) * | 2021-11-18 | 2022-01-07 | 安徽熙泰智能科技有限公司 | Manufacturing method of color OLED display device |
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Application publication date: 20210511 |