CN113394259A - Preparation method of silicon-based display panel, silicon-based display panel and display device - Google Patents
Preparation method of silicon-based display panel, silicon-based display panel and display device Download PDFInfo
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- CN113394259A CN113394259A CN202110655385.5A CN202110655385A CN113394259A CN 113394259 A CN113394259 A CN 113394259A CN 202110655385 A CN202110655385 A CN 202110655385A CN 113394259 A CN113394259 A CN 113394259A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K50/00—Organic light-emitting devices
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/85—Arrangements for extracting light from the devices
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The embodiment of the invention discloses a preparation method of a silicon-based display panel, the silicon-based display panel and a display device, wherein the silicon-based display panel comprises a red pixel area, a green pixel area and a blue pixel area; the preparation method of the silicon-based display panel comprises the following steps: sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate; forming a light extraction layer in a blue pixel area on one side of the packaging layer, which is far away from the silicon-based driving plate; forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer far away from the silicon-based driving plate respectively; wherein the first filter layer covers the light extraction layer. The first filter layer corresponding to the blue pixel area is formed on the light extraction layer, so that the thickness of the first filter layer is controllable, the thickness of the first filter layer is reduced, the transmittance of the first filter layer is improved, the light extraction layer has high light transmittance, and the transmittance of the first filter layer is further improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a preparation method of a silicon-based display panel, the silicon-based display panel and a display device.
Background
With the development of display technology, the application of organic light emitting display technology is becoming more and more widespread. The silicon-based organic light-emitting display panel has the advantages of small pixel size and high pixel density, and is widely applied to the fields of military places, VR/AR, automatic driving and the like.
At present, the micro display technology generally adopts an OLED device structure with a white light emitting layer and a color filter layer, where the color filter layer includes a red filter unit, a green filter unit, and a blue filter unit. In the preparation process, when the red light filtering unit or the green light filtering unit is prepared firstly and the blue light filtering unit is prepared later, the thickness of the blue light filtering unit is larger, and the transmittance of the blue light filtering unit is poorer. In order for a light emitting device to achieve a good light emitting effect, the luminance needs to be increased, which results in a decrease in the lifetime of the light emitting device.
Disclosure of Invention
The invention provides a preparation method of a silicon-based display panel, the silicon-based display panel and a display device, which are used for improving the transmittance of a blue filter layer and reducing the power consumption of a device.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a silicon-based display panel, where the silicon-based display panel includes a red pixel area, a green pixel area, and a blue pixel area; the preparation method comprises the following steps:
sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate;
forming a light extraction layer in a blue pixel area on one side, far away from the silicon-based driving plate, of the packaging layer;
forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side, far away from the silicon-based driving plate, of the packaging layer respectively; wherein the first filter layer covers the light extraction layer.
Optionally, the refractive index of the light extraction layer is 1.7-2.0.
Optionally, the forming a light extraction layer in the blue pixel region on the side of the encapsulation layer away from the silicon-based driving board includes:
forming a layer of light extraction material on the encapsulation layer;
and photoetching the light extraction material layer to form the light extraction layer.
Optionally, the material of the light extraction material layer is curable resin containing titanium dioxide or zirconium dioxide with a particle size of 10-20 nm.
Optionally, the thickness of the light extraction layer is 0.5um to 1.5 um.
Optionally, a sum of thicknesses of the light extraction layer and the first filter layer is greater than a thickness of the second filter layer;
and/or the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
In a second aspect, an embodiment of the present invention further provides a silicon-based display panel, where the silicon-based display panel has a red pixel area, a green pixel area, and a blue pixel area, and the silicon-based display panel includes:
a silicon-based driver board;
the light-emitting device layer is positioned on one side of the silicon-based driving plate;
the packaging layer and the light-emitting device layer are positioned on the same side of the silicon-based driving plate, and the packaging layer packages the light-emitting device layer;
the light extraction layer is positioned in the blue pixel area on one side, away from the silicon-based driving plate, of the packaging layer;
the first filter layer, the second filter layer and the third filter layer are respectively positioned in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer away from the silicon-based driving plate; wherein the first filter layer covers the light extraction layer.
Optionally, the refractive index of the light extraction layer is 1.7-2.0.
Optionally, a sum of thicknesses of the light extraction layer and the first filter layer is greater than a thickness of the second filter layer;
and/or the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
In a third aspect, an embodiment of the present invention further provides a display device, including the silicon-based display panel according to any one of the second aspects.
The embodiment of the invention provides a preparation method of a silicon-based display panel, the silicon-based display panel and a display device, wherein the silicon-based display panel comprises a red pixel area, a green pixel area and a blue pixel area; the preparation method of the silicon-based display panel comprises the following steps: sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate; forming a light extraction layer in a blue pixel area on one side of the packaging layer, which is far away from the silicon-based driving plate; forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer far away from the silicon-based driving plate respectively; wherein the first filter layer covers the light extraction layer. The first filter layer corresponding to the blue pixel area of the embodiment of the invention covers the light extraction layer, and the first filter layer is formed on the light extraction layer, so that the thickness of the first filter layer is controllable, the thickness of the first filter layer is reduced, the transmittance of the first filter layer is improved, the light extraction layer has high light transmission capability, the transmittance of the first filter layer is further improved, and the transmittance of the blue pixel area is improved.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a silicon-based display panel according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional structure diagram of a silicon-based display panel after an encapsulation layer is formed according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a silicon-based display panel after a light extraction material layer is formed according to an embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of a silicon-based display panel after a light extraction layer is formed according to an embodiment of the present invention.
Fig. 5 is a schematic cross-sectional structure diagram of a silicon-based display panel according to an embodiment of the present invention.
Fig. 6 is a flowchart of another method for fabricating a silicon-based display panel according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background art, the conventional silicon-based display panel has the problem that the transmittance of a color filter layer corresponding to a blue pixel region is low, which results in large power consumption of a device. The inventor researches and finds that the problems are caused by that the color filter layer of the current silicon-based display panel is produced by using the photoetching equipment of a semiconductor factory, photoresist is coated on a chip in a spinning mode, the photoresist is dripped on the central area of the chip, and the photoresist covers all the areas of the chip needing to form the color filter layer through the rotation of the chip. When different color filter layers are prepared in sequence, the color filter layer formed by the previous preparation has a certain height, so that when the next color filter layer is prepared, in order to enable all areas of the chip needing to form the color filter layer to cover the photoresist, the using amount of the photoresist is increased, and the thickness of the next color filter layer is increased compared with that of the previous color filter layer. Therefore, when the color filter layer is prepared, the color filter layer corresponding to the red pixel area or the green pixel area is firstly prepared, and then the color filter layer corresponding to the blue pixel area is prepared, so that the thickness of the color filter layer corresponding to the blue pixel area is increased, and the transmittance of the blue pixel area is reduced.
Based on the above reasons, an embodiment of the present invention provides a method for manufacturing a silicon-based display panel, fig. 1 is a flowchart of the method for manufacturing a silicon-based display panel according to the embodiment of the present invention, and fig. 2 to 5 are schematic cross-sectional views of the silicon-based display panel corresponding to steps in the method for manufacturing a silicon-based display panel according to the embodiment of the present invention. Fig. 2 is a schematic cross-sectional structure diagram of a silicon-based display panel after a package layer is formed according to an embodiment of the present invention, fig. 3 is a schematic cross-sectional structure diagram of a silicon-based display panel after a light extraction material layer is formed according to an embodiment of the present invention, fig. 4 is a schematic cross-sectional structure diagram of a silicon-based display panel after a light extraction layer is formed according to an embodiment of the present invention, fig. 5 is a schematic cross-sectional structure diagram of a silicon-based display panel according to an embodiment of the present invention, the display panel can be prepared by the method for preparing a silicon-based display panel according to the present embodiment, and referring to fig. 1 to fig. 5, the silicon-based display panel includes a red pixel region, a green pixel region, and a blue pixel region; the preparation method of the silicon-based display panel comprises the following steps:
s10: sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate;
the silicon-based driving board 100 includes a silicon substrate and a driving circuit disposed on the silicon substrate, in other words, the silicon-based driving board 100 is also referred to as a driving chip. The driving chip is formed with a first electrode 211, and the first electrode 211 may be an anode of a light emitting device formed by the light emitting device layer 200. The light emitting device layer 200 emits light under the driving of the driving chip.
The light emitting device layer 200 and the encapsulation layer 300 may be formed using an evaporation process. The light emitting device layer 200 includes a light emitting layer 220 and a second electrode layer 230. For example, the second electrode layer 230 may be a cathode, and the second electrode layer 230 may be a transparent electrode layer. The light emitting layer 220 may include only a single layer of film, that is, only a light emitting material layer, or may include a multi-layer structure formed by a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer, an electron injection layer, and the like, which are stacked, and the light emitting layer 220 is exemplarily shown as a single layer of film in this embodiment. The light emitting layer 220 is formed by laying the whole layer, and the light emitting layer 220 may be a white light emitting layer emitting white light.
The encapsulation layer 300 may include at least one inorganic layer and at least one organic layer disposed in a stack. The inorganic layer mainly functions to isolate water and oxygen and prevent water and oxygen from invading the light emitting device layer. The organic layer has better flexibility than the inorganic layer, and the main function of the organic layer is to release stress slowly. Specifically, the constituent material of the inorganic layer may include silicon nitride (SiNx), and the material of the organic layer may include at least one of acrylate and hexamethyldisiloxane.
S20: forming a light extraction layer in a blue pixel area on one side of the packaging layer, which is far away from the silicon-based driving plate;
the silicon-based display panel comprises a plurality of pixels, each pixel comprises a plurality of sub-pixels, each sub-pixel corresponds to a light-emitting device, and the light-emitting device comprises a first electrode 211, a light-emitting layer 220 and a second electrode layer 230 which are arranged in a stacked manner. Each sub-pixel may emit light of a specific color, and the sub-pixel emitting red light, the sub-pixel emitting blue light, and the sub-pixel emitting green light are referred to as a red pixel, a green pixel, and a blue pixel, respectively. The red, green and blue pixels are disposed in the red, green and blue pixel regions, respectively.
The blue pixel region is used for outputting blue light, and the light extraction layer 410 is a film layer with a higher refractive index, and is formed through a photolithography process, so that the light extraction layer 410 can improve the transmittance of light. In preparing the light extraction layer 410, a light extraction material layer 400 is formed on a side of the encapsulation layer 300 away from the silicon-based driving board 100, as shown in fig. 3. The light extraction material layer 400 is subjected to photolithography to form a light extraction layer 410, and the formed light extraction layer 410 is shown in fig. 4.
S30: forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer far away from the silicon-based driving plate respectively; wherein the first filter layer covers the light extraction layer.
The first filter layer 510 is made of blue glue, the second filter layer 520 is made of red glue, and the third filter layer 530 is made of green glue. The first filter layer 510, the second filter layer 520, and the third filter layer 530 are formed by photolithography. When the first filter layer 510, the second filter layer 520, and the third filter layer 530 are formed, the first filter layer 510 may be formed first and then the second filter layer 520 or the third filter layer 530 is formed, or the second filter layer 520 or the third filter layer 530 may be formed first and then the first filter layer 510 is formed. When each color filter layer is prepared by adopting a photoetching mode, the thickness of the color filter layer prepared later is larger than that of the color filter layer prepared first. When the first filter layer 510 is formed first and then the second filter layer 520 or the third filter layer 530 is formed, the thickness of the first filter layer 510 is smaller, so that the first filter layer 510 has a higher transmittance, and the first filter layer 510 covers the light extraction layer 410, so that the light extraction layer 410 further improves the transmittance of the film layer in the area where the first filter layer 510 is located, so that the transmittance of the area where the first filter layer 510 is located is obviously improved.
When the first filter layer 510 is formed later, for example, in this embodiment, when the first filter layer 510, the second filter layer 520, and the third filter layer 530 are formed in order in the blue pixel region 01, the red pixel region 02, and the green pixel region 03, respectively, as shown in fig. 5. When the third process is used to prepare the film layer, the thickness of the film layer prepared by the third process is c, and in this embodiment, when the first filter layer 510 is prepared, since the first filter layer 510 is formed on the light extraction layer 410, the sum of the thickness b of the first filter layer 510 and the thickness a of the light extraction layer 410 is the thickness c of the film layer prepared by the third process. Compared with the prior art, when the third step directly prepares the first filter layer 510, the thickness of the first filter layer 510 is c, and the thickness of the first filter layer 510 of this embodiment is b, which obviously reduces the thickness of the first filter layer 510, improves the transmittance of the first filter layer 510, and the light extraction layer 410 has a higher refractive index, further improves the transmittance of the first filter layer 510, reduces power consumption, and ensures that the silicon-based display panel has a better display effect.
The embodiment provides a preparation method of a silicon-based display panel, wherein the silicon-based display panel comprises a red pixel area, a green pixel area and a blue pixel area; the preparation method of the silicon-based display panel comprises the following steps: sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate; forming a light extraction layer in a blue pixel area on one side of the packaging layer, which is far away from the silicon-based driving plate; forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer far away from the silicon-based driving plate respectively; wherein the first filter layer covers the light extraction layer. The first filter layer corresponding to the blue pixel area covers the light extraction layer, and the first filter layer is formed on the light extraction layer, so that the thickness of the first filter layer is controllable, the thickness of the first filter layer is reduced, the transmittance of the first filter layer is improved, the light extraction layer has high light transmittance, the transmittance of the first filter layer is further improved, and the transmittance of the blue pixel area is improved.
Optionally, the refractive index of the light extraction layer is 1.7-2.0.
When the refractive index of the light extraction layer is 1.7-2.0, the refractive index of the light extraction layer is higher, the transmittance of the first filter layer covering the light extraction layer is improved, and when the refractive index is 1.7-2.0, the material of the light extraction layer in the prior art can reach the refractive index range, so that the light extraction layer is easier to prepare.
Fig. 6 is a flowchart of another method for manufacturing a silicon-based display panel according to an embodiment of the present invention, and referring to fig. 6, optionally, the method for manufacturing a silicon-based display panel includes:
s100: sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate;
specifically, step S10 of the above embodiment can be referred to for implementation of step S100.
S210: forming a light extraction material layer on the encapsulation layer;
and spin-coating a light extraction material layer on the packaging layer, wherein the light extraction material layer is photoresist.
S220: and photoetching the light extraction material layer to form the light extraction layer.
And (3) conveying the silicon wafer on which the light extraction material layer is formed into a photoetching machine for exposure, wherein the photoetching machine is a stepping photoetching machine, and the exposure amount of the stepping photoetching machine is controlled to be 200-800 mj. The exposed light extraction material layer is developed with a developer, wherein the developer may be tetramethylammonium hydroxide (TMAH) with a concentration of 2.38%. After the development was completed, the silicon wafer was baked at a temperature of 200 ℃ for 20 minutes to obtain a light extraction layer.
S300: forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer far away from the silicon-based driving plate respectively; wherein the first filter layer covers the light extraction layer.
Specifically, step S30 of the above embodiment can be referred to for implementation of step S300.
Optionally, the material of the light extraction material layer is curable resin containing titanium dioxide or zirconium dioxide with a particle size of 10-20 nm.
The light extraction layer is required to have a higher refractive index to further increase the transmittance of the first filter layer covering the light extraction layer, and therefore, the material of the light extraction material layer may be a curable resin containing titanium dioxide or zirconium dioxide having a particle diameter of 10 to 20nm and a higher refractive index.
Optionally, the thickness of the light extraction layer is 0.5um to 1.5 um.
The thickness of light extraction layer is 0.5um, and the thickness of first filter layer is great, can have better light filtering effect. The thickness of light extraction layer is 1.5um for the thickness of first filter layer is less, improves the transmissivity of first filter layer.
Optionally, the thickness of the light extraction layer is 1 um. When the thickness on light extraction layer was 1um, can be so that the filter effect of first filter layer is better, and first filter layer thickness is less simultaneously, improves the transmissivity, guarantees that display panel has better display effect.
Optionally, the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the second filter layer;
and/or the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
When the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the second filter layer, the second filter layer may be formed first, then the first filter layer may be formed, and finally the third filter layer may be formed. Or, the third filter layer is formed first, then the second filter layer is formed, and finally the first filter layer is formed. The second filter layer may be formed first, then the third filter layer, and finally the first filter layer. In the above three preparation sequences, the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the second filter layer.
When the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer, the third filter layer may be formed first, the first filter layer may be formed, and the second filter layer may be formed last. Alternatively, the second filter layer may be formed first, then the third filter layer may be formed, and finally the first filter layer may be formed. The third filter layer may be formed first, the second filter layer may be formed second, and the first filter layer may be formed last. In the above three preparation sequences, the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
When the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the second filter layer and the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer, the third filter layer may be formed first, then the second filter layer may be formed, and finally the first filter layer may be formed. Or, the second filter layer is formed first, then the third filter layer is formed, and finally the first filter layer is formed.
The above-mentioned several orders for preparing the filter layers are to prepare the second filter layer first or to prepare the third filter layer first and then to prepare the first filter layer. Compared with the prior art, the second filter layer or the third filter layer is prepared firstly, and then the first filter layer is prepared, so that the thickness of the first filter layer is too thick, and the transmittance of the first filter layer is reduced.
The embodiment of the present invention further provides a schematic cross-sectional structure diagram of a silicon-based display panel, and with reference to fig. 5, the silicon-based display panel has a red pixel area 02, a green pixel area 03, and a blue pixel area 01, and the silicon-based display panel includes:
a silicon-based drive plate 100;
a light emitting device layer 200 positioned at one side of the silicon-based driving board 100;
the encapsulation layer 300 is positioned on the same side of the silicon-based driving board 100 as the light emitting device layer 200, and the encapsulation layer 300 encapsulates the light emitting device layer 200;
the light extraction layer 410 is positioned in the blue pixel area 01 on one side of the packaging layer 300 away from the silicon-based driving plate 100;
a first filter layer 510, a second filter layer 520, and a third filter layer 530 respectively located in the blue pixel area 01, the red pixel area 02, and the green pixel 03 on the side of the package layer 300 away from the silicon-based driving board 100; wherein the first filter layer 510 covers the light extraction layer 410.
The embodiment provides a silicon-based display panel, which is provided with a red pixel area, a green pixel area and a blue pixel area; the silicon-based display panel comprises a silicon-based driving board, a light-emitting device layer, an encapsulation layer, a light extraction layer, a first filter layer, a second filter layer and a third filter layer. And the light-emitting device layer is positioned on one side of the silicon-based driving plate. And the packaging layer and the light-emitting device layer are positioned on the same side of the silicon-based driving plate, and the packaging layer is used for packaging the light-emitting device layer. And the light extraction layer is positioned in the blue pixel area on one side of the packaging layer, which is far away from the silicon-based driving plate. The first filter layer, the second filter layer and the third filter layer are respectively positioned in a blue pixel area, a red pixel area and a green pixel area on one side, far away from the silicon-based driving plate, of the packaging layer, and the first filter layer covers the light extraction layer. The first filter layer corresponding to the blue pixel area covers the light extraction layer, and the first filter layer is formed on the light extraction layer, so that the thickness of the first filter layer is controllable, the thickness of the first filter layer is reduced, the transmittance of the first filter layer is improved, the light extraction layer has high light transmittance, the transmittance of the first filter layer is further improved, and the transmittance of the blue pixel area is improved.
Optionally, the refractive index of the light extraction layer is 1.7-2.0.
Optionally, the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the second filter layer;
and/or the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
Fig. 7 is a schematic structural diagram of the display device according to the embodiment of the present invention, and referring to fig. 7, optionally, the display device 11 includes any one of the silicon-based display panels 12.
In this embodiment, the display device 11 may be VR glasses, and the lenses of the VR glasses include the silicon-based display panel 12 in the above embodiment. In other embodiments, the display device 11 may also be other micro display devices, and this embodiment is not limited in this respect.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. The preparation method of the silicon-based display panel is characterized in that the silicon-based display panel comprises a red pixel area, a green pixel area and a blue pixel area; the preparation method comprises the following steps:
sequentially forming a light-emitting device layer and a packaging layer on one side of a silicon-based driving plate;
forming a light extraction layer in a blue pixel area on one side, far away from the silicon-based driving plate, of the packaging layer;
forming a first filter layer, a second filter layer and a third filter layer in the blue pixel area, the red pixel area and the green pixel area on one side, far away from the silicon-based driving plate, of the packaging layer respectively; wherein the first filter layer covers the light extraction layer.
2. The method of claim 1, wherein the light extraction layer has a refractive index of 1.7-2.0.
3. The method for manufacturing a silicon-based display panel according to claim 1, wherein the forming a light extraction layer in the blue pixel region on the side of the encapsulation layer away from the silicon-based driving board comprises:
forming a layer of light extraction material on the encapsulation layer;
and photoetching the light extraction material layer to form the light extraction layer.
4. The method of claim 3, wherein the light extraction material layer is made of a curable resin containing 10-20nm diameter titanium dioxide or zirconium dioxide.
5. The method of claim 1, wherein the light extraction layer has a thickness of 0.5um to 1.5 um.
6. The method of claim 1, wherein a sum of thicknesses of the light extraction layer and the first filter layer is greater than a thickness of the second filter layer;
and/or the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
7. A silicon-based display panel having a red pixel region, a green pixel region, and a blue pixel region, the silicon-based display panel comprising:
a silicon-based driver board;
the light-emitting device layer is positioned on one side of the silicon-based driving plate;
the packaging layer and the light-emitting device layer are positioned on the same side of the silicon-based driving plate, and the packaging layer packages the light-emitting device layer;
the light extraction layer is positioned in the blue pixel area on one side, away from the silicon-based driving plate, of the packaging layer;
the first filter layer, the second filter layer and the third filter layer are respectively positioned in the blue pixel area, the red pixel area and the green pixel area on one side of the packaging layer away from the silicon-based driving plate; wherein the first filter layer covers the light extraction layer.
8. The silicon-based display panel of claim 7, wherein the light extraction layer has a refractive index of 1.7-2.0.
9. The silicon-based display panel of claim 7, wherein a sum of the thicknesses of the light extraction layer and the first filter layer is greater than a thickness of the second filter layer;
and/or the sum of the thicknesses of the light extraction layer and the first filter layer is greater than the thickness of the third filter layer.
10. A display device comprising the silicon-based display panel according to any one of claims 7 to 9.
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