CN212209496U - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
- Publication number
- CN212209496U CN212209496U CN202021300146.5U CN202021300146U CN212209496U CN 212209496 U CN212209496 U CN 212209496U CN 202021300146 U CN202021300146 U CN 202021300146U CN 212209496 U CN212209496 U CN 212209496U
- Authority
- CN
- China
- Prior art keywords
- metal layer
- layer
- display panel
- filter
- pixel unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The embodiment of the utility model discloses display panel and display device, this display panel includes: a pixel unit layer including a plurality of pixel units; the light filter comprises a bottom metal layer, a dielectric layer and a top metal layer which are arranged in a laminated mode. The embodiment of the utility model provides a technical scheme has reduced the pollution degree to the environment in display panel and the display device manufacture process.
Description
Technical Field
The embodiment of the utility model provides a relate to the semiconductor technology field, especially relate to a display panel and display device.
Background
With the rapid development of the information technology era, the display panel is more and more widely applied to display devices such as smart phones and smart wearable displays.
A conventional display panel includes a pixel unit and a filter, wherein light emitted from the pixel unit is converted into light of a specific color through the filter. The existing optical filter includes an organic dye, which causes serious environmental pollution.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides a display panel and a display device, which reduce the pollution degree to the environment in the manufacturing process of the display panel and the display device.
An embodiment of the utility model provides a display panel, include:
a pixel unit layer including a plurality of pixel units;
the optical filter is positioned on the surface of the pixel unit, and comprises a bottom metal layer, a dielectric layer and a top metal layer which are arranged in a laminated mode.
Optionally, the filter comprises one or more of a red filter, a green filter, and a blue filter.
Optionally, the thickness of the dielectric layer is proportional to the filtering wavelength of the optical filter.
Optionally, the thickness of the bottom metal layer is greater than or equal to 5 nanometers, which is less than or equal to 20 nanometers; and/or the presence of a gas in the gas,
the thickness of the top metal layer is greater than or equal to 5 nanometers and less than or equal to 20 nanometers.
Optionally, the bottom metal layer comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer and a magnesium-silver alloy bottom metal layer; and/or the presence of a gas in the gas,
the top metal layer comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer and a magnesium-silver alloy bottom metal layer.
Optionally, the dielectric layer includes a silicon oxide dielectric layer or an amorphous silicon dielectric layer.
Optionally, the pixel unit layer includes a silicon substrate and a light emitting device layer on a surface of the silicon substrate.
Optionally, the display device further comprises a printed circuit board, wherein the printed circuit board is located on the surface of the pixel unit layer on the side far away from the optical filter.
Optionally, the packaging structure further comprises a thin film packaging layer and a cover plate;
the thin film packaging layer is positioned between the pixel unit and the optical filter;
the cover plate is positioned on one side of the optical filter, which is far away from the pixel unit.
The embodiment of the utility model provides a still provide a display device, including arbitrary among the above-mentioned technical scheme display panel.
In the technical scheme provided by this embodiment, the optical filter includes a bottom metal layer, a dielectric layer, and a top metal layer, which are stacked, where the bottom metal layer, the dielectric layer, and the top metal layer form a fabry-perot cavity interference type optical filter. Light emitted by the pixel unit enters the dielectric layer through the bottom metal layer, light with the filtering wavelength propagates in the dielectric layer in a resonance state, and then passes through the top metal layer to be emitted out with the light with the filtering wavelength. The bottom metal layer, the dielectric layer and the top metal layer do not relate to organic dye, and the pollution degree of the display panel to the environment in the manufacturing process can be reduced. Compared with the optical filter comprising the organic dye, the optical filter formed by the bottom metal layer, the dielectric layer and the top metal layer still keeps stable physicochemical properties along with the change of the environmental temperature, so that the optical filter has stable optical filtering performance along with the change of the environmental temperature.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background art, the existing manufacturing process of the optical filter in the display panel has serious environmental pollution. For this reason, the conventional color filter used in the display panel is an absorption-type color filter including an organic dye, and the organic dye absorbs incident light with different wavelengths to show a specific color. And the preparation process of the organic dye has serious environmental pollution.
To the above technical problem, the embodiment of the utility model provides a following technical scheme:
fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention. Fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 1 and 2, the display panel includes: a pixel unit layer 10, the pixel unit layer 10 including a plurality of pixel units 10A; a plurality of filters 20, a filter 20 is located on the surface of a pixel unit 10A, wherein the filter 20 includes a bottom metal layer 21, a dielectric layer 22 and a top metal layer 23 which are stacked.
Illustratively, the underlying metal layers 21 are shown in FIG. 1 as being discrete and spaced apart. The underlying metal layer 21 shown in fig. 2 is continuous. Both configurations are possible. It is appreciated that dielectric layer 22 may be formed by plasma enhanced chemical vapor deposition. The bottom metal layer 21 and the top metal layer 23 may be prepared using a thermal evaporation technique.
It should be noted that the dielectric constant of the dielectric layer 22 is larger than that of the bottom metal layer 21 and the top metal layer 23, so that light with a filtering wavelength can be allowed to propagate in the dielectric layer 22 in a resonant state. The thickness of the dielectric layer 22 is related to the filtering wavelength, so that the filtering wavelength of the filter 20 composed of the bottom metal layer 21, the dielectric layer 22 and the top metal layer 23 can be adjusted by adjusting the thickness of the dielectric layer 22.
In the technical solution provided in this embodiment, the optical filter 20 includes a bottom metal layer 21, a dielectric layer 22, and a top metal layer 23, which are stacked, where the bottom metal layer 21, the dielectric layer 22, and the top metal layer 23 form a Fabry-perot (Fabry-perot) interference filter. The light emitted from the pixel unit 10A enters the dielectric layer 22 through the bottom metal layer 21, propagates in the dielectric layer 22 in a resonant state, and then exits through the top metal layer 23 as light of a filter wavelength. The bottom metal layer 21, the dielectric layer 22 and the top metal layer 23 do not involve organic dyes, so that the pollution degree of the display panel to the environment in the manufacturing process can be reduced. Compared with the optical filter comprising the organic dye, the optical filter formed by the bottom metal layer 21, the dielectric layer 22 and the top metal layer 23 still keeps stable physicochemical properties along with the change of the environmental temperature, so that the optical filter 20 has stable optical filtering properties along with the change of the environmental temperature.
In order to enable the display panel to display a color picture, the present embodiment provides the following technical solutions:
fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Alternatively, referring to fig. 3, the filter 20 includes one or more of a red filter 20A, a green filter 20B, and a blue filter 20C.
Specifically, light emitted from the pixel unit 10A enters the dielectric layer 22 through the bottom metal layer 21 of the red filter 20A, and light with a red wavelength propagates in the dielectric layer 22 in a resonant state and then exits as red light through the top metal layer 23. The light emitted from the pixel unit 10A enters the dielectric layer 22 through the bottom metal layer 21 of the green filter 20B, and the light of the green wavelength propagates in the dielectric layer 22 in a resonant state and then exits as green light through the top metal layer 23. Light emitted from the pixel unit 10A enters the dielectric layer 22 through the bottom metal layer 21 of the blue filter 20C, and light of a blue wavelength propagates in the dielectric layer 22 in a resonant state and then exits as blue light through the top metal layer 23. Illustratively, the pixel units 10A included in the pixel unit layer 10 emit white light uniformly, and the positions and the numbers of the red filters 20A, the green filters 20B, and the blue filters 20C are configured appropriately, so that the display panel can display a color picture.
Since the thickness of the dielectric layer 22 is related to the filtering wavelength of the filter 20, the following describes a technical solution for adjusting the filtering wavelength of the filter 20 by adjusting the thickness of the dielectric layer 22:
optionally, the thickness of the dielectric layer 22 is proportional to the filtering wavelength of the filter 20.
Referring to fig. 3, in the red filter 20A, the green filter 20B, and the blue filter 20C, the thickness of the dielectric layer 22 of the red filter 20A is greater than the thickness of the dielectric layer 22 of the green filter 20B, and the thickness of the dielectric layer 22 of the green filter 20B is greater than the thickness of the dielectric layer 22 of the blue filter 20C. Illustratively, the dielectric layer 22 of the red filter 20A has a thickness of about 28 nm. The thickness of the dielectric layer 22 of the green filter 20B is about 15 nm, and the thickness of the dielectric layer 22 of the blue filter 20C is about 9 nm. Specifically, the thickness of the dielectric layer 22 is in direct proportion to the filtering wavelength of the optical filter 20, and the optical filter with the preset filtering wavelength can be conveniently and simply prepared by controlling the variable quantity of the thickness of the dielectric layer 22.
In the above technical solution, light emitted by the pixel unit 10A enters the dielectric layer 22 through the bottom metal layer 21, and light with a filtering wavelength propagates in the dielectric layer 22 in a resonant state, and then passes through the top metal layer 23 to exit as light with a filtering wavelength, so as to achieve the effect of filtering light by the optical filter. Wherein the thickness of the bottom metal layer 21 and the thickness of the top metal layer 23 both affect the transmittance of light.
Alternatively, referring to fig. 3, the thickness of the underlying metal layer 21 is greater than or equal to 5 nanometers, which is less than or equal to 20 nanometers; and/or the thickness of the top metal layer 23 is greater than or equal to 5 nanometers, which is less than or equal to 20 nanometers.
Specifically, the thickness of the bottom metal layer 21 is too thick to be greater than 20 nm, and the transmission performance and the reflection performance of the bottom metal layer 21 are reduced and enhanced, which is not favorable for the light emitted by the pixel unit 10A to enter the dielectric layer 22 through the bottom metal layer 21. The thickness of the underlying metal layer 21 is too thin to be less than 5 nm, resulting in too low mechanical strength of the underlying metal layer 21, resulting in unstable mechanical properties of the entire filter 20, which is easily damaged.
The thickness of the top metal layer 23 is too thick to be greater than 20 nm, and the transmission performance and the reflection performance of the top metal layer 23 are reduced, which is not favorable for the light with the filtering wavelength to pass through the top metal layer 23 to be emitted out. The thickness of the top metal layer 23 is too thin to be less than 5 nm, resulting in too low mechanical strength of the top metal layer 23, resulting in unstable mechanical properties of the entire filter 20 and being easily damaged.
Optionally, referring to fig. 3, the bottom metal layer 21 includes one or more of a silver bottom metal layer, an aluminum bottom metal layer, and a magnesium-silver alloy bottom metal layer; and/or the top metal layer 23 comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer, and a magnesium-silver alloy bottom metal layer.
Specifically, the silver bottom metal layer, the aluminum bottom metal layer and the magnesium-silver alloy bottom metal layer have good light transmittance within a preset thickness range, so that light emitted by the pixel unit 10A can enter the dielectric layer 22 through the bottom metal layer 21, the material price is low, and the production cost of the optical filter is reduced.
The silver bottom metal layer, the aluminum bottom metal layer and the magnesium-silver alloy bottom metal layer have good light transmission performance within a preset thickness range, light with filtering wavelength can pass through the top metal layer 23 to be emitted out with light with filtering wavelength, the material price is low, and the production cost of the optical filter is reduced.
It should be noted that the bottom metal layer 21 and the top metal layer 23 provided by the embodiments of the present invention include, but are not limited to, the film layer made of the above materials.
Alternatively, referring to fig. 3, the dielectric layer 22 comprises a silicon oxide dielectric layer or an amorphous silicon dielectric layer.
Specifically, the dielectric constant of the silicon oxide dielectric layer or the amorphous silicon dielectric layer is relatively high, which facilitates the light with the filtering wavelength to propagate in the dielectric layer 22, but not to be emitted from the dielectric layer 22 in the process of propagation. It should be noted that the dielectric layer 22 provided by the embodiment of the present invention includes, but is not limited to, a film layer made of the above materials.
In the above technical solution, light emitted by the pixel unit 10A in the pixel unit layer 10 is converted into light of a specific color by the optical filter 20, so as to complete the image display of the display panel. The specific structure of the inside of the pixel unit layer 10 will be described in detail below.
Fig. 4 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 4, the pixel unit layer 10 includes a silicon substrate 11 and a light emitting device layer 12, and the light emitting device layer 12 is located on a surface of the silicon substrate 11.
It should be noted that the light-emitting device layer 12 includes a plurality of discrete anodes 120, light-emitting layers 121, and cathode layers 122, and each anode 120, and the light-emitting layer 121 and the cathode layer 122 corresponding to the anode 120 constitute one pixel unit 10A. The light emitting layer 121 may include a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked, wherein the hole injection layer contacts the anode 120, and the electron injection layer contacts the cathode layer 122. The carriers reach the organic light-emitting layer from the hole injection layer and the electron injection layer through the transmission of the hole transport layer and the electron transport layer to carry out compound light emission. A driving circuit for driving the pixel unit 10A is provided on the silicon substrate 11. Wherein the silicon substrate is provided with a via 11A for conducting an electrical signal from the side of the silicon substrate 11 adjacent to the anode 120 to the surface of the silicon substrate 11 remote from the anode 120.
A driving circuit is formed on the silicon substrate 11 by using a silicon material as an active layer through a CMOS integrated circuit process, wherein the driving circuit includes a thin film transistor having a high carrier mobility and a threshold voltage with less drift. The preparation of the driving circuit on the silicon substrate 11 adopts the CMOS integrated circuit instead of the thin film transistor process, and has the advantages that: 1. in the production process of the thin film transistor, the characteristic dimension of the thin film transistor is relatively large, usually several to tens of micrometers, while the silicon material is used as an active layer to form a driving circuit through the CMOS integrated circuit process, the size of the prepared driving transistor can be reduced to be below micrometers, correspondingly, pixel units 10A with a spacing of about ten micrometers can be formed on the surface of the silicon substrate 11, and the size of the whole display panel is greatly reduced. 2. The CMOS integrated circuit technology is mature, and can be produced by an integrated circuit foundry, so that the product yield is high. 3. The CMOS integrated circuit process has low energy consumption. Therefore, the display panel including the silicon substrate 11 has advantages of long lifetime, small volume, light weight, high product yield, low power consumption, and the like.
The display panel including the silicon substrate 11 is referred to as a silicon-based display panel. Silicon-based display panels are increasingly widely used in display devices such as smart phones and smart wearable displays due to their advantages of long service life, small size, light weight, high product yield, low energy consumption, etc.
The embodiment of the utility model provides a still provide a preparation method of pixel unit layer, this method includes: providing a silicon substrate, defining a plurality of pixel unit areas on the silicon substrate, and preparing a light-emitting device layer in the pixel unit areas. The preparation process of the light-emitting device layer comprises the following steps: an anode, a light emitting layer and a cathode layer are prepared in the pixel unit area.
Optionally, referring to fig. 4, the display panel further includes a printed circuit board 30, and the printed circuit board 30 is located on a surface of the pixel unit layer 10 on a side away from the filter 20.
The printed circuit board 30 is provided with a pad, which is electrically connected to the driving circuit on the silicon substrate 11 through the via 11A and is used for providing a driving signal to the driving circuit to display a picture on the display panel.
Optionally, referring to fig. 4, the display panel further includes a thin film encapsulation layer 40 and a cover plate 50; the thin film encapsulation layer 40 is positioned between the pixel unit layer 10 and the optical filter 20; the cover plate 50 is located on a side of the filter 20 away from the pixel unit layer 10.
Specifically, the thin film encapsulation layer 40 may be an organic film layer, an inorganic film layer, or a stacked structure formed by the organic film layer and the inorganic film layer, and is used for preventing external water and oxygen from invading into the pixel unit layer 10. The cover plate 50 illustratively comprises a glass cover plate. Wherein an adhesive layer 60 is disposed between the cover plate 50 and the thin film encapsulation layer 40 for fixing the cover plate 50 to the surface of the thin film encapsulation layer 40. Illustratively, the adhesive layer 60 may be selected from an Ultraviolet Rays (UV) adhesive. The shadowless adhesive is also called photosensitive adhesive and ultraviolet light curing adhesive, and is a kind of adhesive which can be cured only by ultraviolet light irradiation.
It should be noted that, in the display panel shown in the present invention, 3 pixel units 10A are exemplarily shown.
The embodiment of the utility model provides a still provide a display device, fig. 5 is the embodiment of the utility model provides a display device's schematic structure diagram. As shown in fig. 5, the display device 02 includes the display panel 01 in the above-described embodiment. For example, the display device 02 may include a display device such as a mobile phone, a computer, and a smart wearable device, and the embodiment of the present invention is not limited thereto. Illustratively, the display device shown in fig. 5 is Augmented Reality (Augmented Reality) glasses.
The embodiment of the utility model provides a display device includes above-mentioned display panel, consequently has the beneficial effect that above-mentioned display panel has, no longer gives unnecessary details here.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. A display panel, comprising:
a pixel unit layer including a plurality of pixel units;
the optical filter is positioned on the surface of the pixel unit, and comprises a bottom metal layer, a dielectric layer and a top metal layer which are arranged in a laminated mode.
2. The display panel of claim 1, wherein the filter comprises one or more of a red filter, a green filter, and a blue filter.
3. The display panel of claim 1, wherein the thickness of the dielectric layer is proportional to the filtering wavelength of the filter.
4. The display panel of claim 1, wherein the thickness of the underlying metal layer is greater than or equal to 5 nanometers and less than or equal to 20 nanometers; and/or the presence of a gas in the gas,
the thickness of the top metal layer is greater than or equal to 5 nanometers and less than or equal to 20 nanometers.
5. The display panel of claim 1, wherein the underlying metal layer comprises one or more of a silver underlying metal layer, an aluminum underlying metal layer, and a magnesium-silver alloy underlying metal layer; and/or the presence of a gas in the gas,
the top metal layer comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer and a magnesium-silver alloy bottom metal layer.
6. The display panel of claim 1, wherein the dielectric layer comprises a silicon oxide dielectric layer or an amorphous silicon dielectric layer.
7. The display panel of claim 1, wherein the pixel cell layer comprises a silicon substrate and a light emitting device layer on a surface of the silicon substrate.
8. The display panel according to claim 1, further comprising a printed circuit board on a surface of the pixel unit layer on a side away from the filter.
9. The display panel according to claim 1, further comprising a thin film encapsulation layer and a cover plate;
the thin film packaging layer is positioned between the pixel unit and the optical filter;
the cover plate is positioned on one side of the optical filter, which is far away from the pixel unit.
10. A display device comprising the display panel according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021300146.5U CN212209496U (en) | 2020-07-06 | 2020-07-06 | Display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021300146.5U CN212209496U (en) | 2020-07-06 | 2020-07-06 | Display panel and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212209496U true CN212209496U (en) | 2020-12-22 |
Family
ID=73818241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021300146.5U Active CN212209496U (en) | 2020-07-06 | 2020-07-06 | Display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212209496U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394259A (en) * | 2021-06-11 | 2021-09-14 | 南京昀光科技有限公司 | Preparation method of silicon-based display panel, silicon-based display panel and display device |
| CN117631114A (en) * | 2024-01-26 | 2024-03-01 | 衣金光学科技南通有限公司 | Method for manufacturing optical filter unit and optical filter unit |
-
2020
- 2020-07-06 CN CN202021300146.5U patent/CN212209496U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394259A (en) * | 2021-06-11 | 2021-09-14 | 南京昀光科技有限公司 | Preparation method of silicon-based display panel, silicon-based display panel and display device |
| CN117631114A (en) * | 2024-01-26 | 2024-03-01 | 衣金光学科技南通有限公司 | Method for manufacturing optical filter unit and optical filter unit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2020253329A1 (en) | Display panel and display device | |
| CN109148725B (en) | Light emitting device, pixel unit, preparation method of pixel unit and display device | |
| US20130181242A1 (en) | Organic electroluminescent device and method for manufacturing thereof | |
| US10446798B2 (en) | Top-emitting WOLED display device | |
| KR102174652B1 (en) | Light-emitting device, display apparatus, and illumination apparatus | |
| CN212209496U (en) | Display panel and display device | |
| KR20070115995A (en) | Color conversion substrate, method for manufacturing same and light-emitting device | |
| US11322706B2 (en) | Quantum dot film, quantum dot light-emitting assembly and display device | |
| WO2019052002A1 (en) | Color film substrate and display device | |
| US20090051271A1 (en) | Top emitting, electroluminescent component with frequency conversion centres | |
| US11056469B2 (en) | Multimedia device having a pixel array and method for manufacturing the multimedia device | |
| CN111048648B (en) | Display panel, manufacturing method and electronic equipment | |
| CN113113455A (en) | OLED display panel and display device | |
| WO2022247157A1 (en) | Display substrate and method for manufacturing same, and display device | |
| CN212209497U (en) | Display panel and micro silicon display | |
| WO2015161595A1 (en) | Oled panel and preparation method therefor, and display device | |
| CN107425129B (en) | organic light-emitting display panel, color temperature adjusting method thereof and display device | |
| US10930631B2 (en) | Display apparatus, pixel array and manufacturing method thereof | |
| CN111933673A (en) | Display panel, manufacturing method thereof and display device | |
| CN212516389U (en) | Display panel and micro display | |
| CN212460196U (en) | Micro display | |
| CN113948660B (en) | Display panel, manufacturing method thereof and display device | |
| CN215418220U (en) | Micro silicon display panel and micro silicon display | |
| CN111933037B (en) | Display substrate and quantum dot display panel | |
| CN111799387B (en) | Display panel, manufacturing method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |