CN215418220U - Micro silicon display panel and micro silicon display - Google Patents
Micro silicon display panel and micro silicon display Download PDFInfo
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- CN215418220U CN215418220U CN202121822744.3U CN202121822744U CN215418220U CN 215418220 U CN215418220 U CN 215418220U CN 202121822744 U CN202121822744 U CN 202121822744U CN 215418220 U CN215418220 U CN 215418220U
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Abstract
The embodiment of the utility model discloses a micro silicon display panel and a micro silicon display. The micro silicon display panel includes: a silicon substrate; the organic light-emitting device layer is positioned on the surface of the silicon substrate; the thin film packaging layer is positioned on the surface of the organic light-emitting device layer far away from the silicon substrate; and the metal grating filter is positioned on the surface of the thin film packaging layer, which is far away from the silicon substrate, and comprises a grating structure with the preset slit width. The technical scheme provided by the embodiment of the utility model reduces the pollution degree of the silicon display panel and the micro silicon display to the environment in the preparation process.
Description
Technical Field
The embodiment of the utility model relates to the technical field of semiconductors, in particular to a micro silicon display panel and a micro silicon display.
Background
With the rapid development of the information technology era, the application of the micro silicon display panel in display devices such as smart phones and smart wearable displays is more and more extensive due to the advantages of long service life, small volume, light weight, high product yield, low energy consumption and the like.
The conventional micro silicon display panel includes a silicon substrate, an organic light emitting device layer, and a filter, wherein light emitted from the organic light emitting device layer is converted into light of a specific color through the filter. The existing optical filter is made of organic dye, and the existing optical filter seriously pollutes the environment.
SUMMERY OF THE UTILITY MODEL
In view of this, embodiments of the present invention provide a micro silicon display panel and a micro silicon display to reduce the pollution level to the environment during the preparation process of the silicon display panel and the micro silicon display.
An embodiment of the present invention provides a micro silicon display panel, including:
a silicon substrate;
an organic light-emitting device layer located on the surface of the silicon substrate;
the thin film packaging layer is positioned on the surface of the organic light-emitting device layer far away from the silicon substrate;
and the metal grating filter is positioned on the surface of the thin film packaging layer far away from the silicon substrate, and comprises a grating structure with a preset slit width.
Optionally, the metal grating filter includes at least one of a red metal grating filter, a green metal grating filter, and a blue metal grating filter.
Optionally, the slit width of the metal grating filter is in positive correlation with the filtering wavelength of the metal grating filter.
Optionally, the width of the preset slit of the red metal grating filter is greater than or equal to 390nm and less than or equal to 430 nm.
Optionally, the width of the preset slit of the green metal grating filter is greater than or equal to 320nm and less than or equal to 340 nm.
Optionally, the preset slit width of the blue metal grating filter is greater than or equal to 270nm and less than or equal to 300 nm.
Optionally, the optical filter further includes a package cover plate, and the package cover plate is located on the surface of the metal grating filter, which is far away from the silicon substrate.
Optionally, the thickness of the metal grating filter is greater than or equal to 10nm and less than or equal to 40 nm.
Optionally, the organic light emitting device layer comprises a white organic light emitting device layer.
The embodiment of the utility model also provides a micro silicon display which comprises the micro silicon display panel in any technical scheme.
In the technical scheme provided by this embodiment, the metal grating filter includes a grating structure with a preset slit width, so that light emitted by the organic light emitting device layer can be emitted through the metal grating filter in a resonant state. Because the light emitted by the organic light-emitting device layer is emitted through the metal grating filter in a resonant state, the light intensity of the light emitted from the metal grating filter is enhanced, and the image display quality of the micro-silicon display panel is improved. And the filtering wavelength of the metal grating filter can be adjusted by adjusting the slit width of the grating structure of the metal grating filter. The metal grating filter does not relate to organic dye, and can reduce the pollution degree of the micro-silicon display panel to the environment in the manufacturing process. Compared with the optical filter made of organic dye, the optical filter needs the photoetching technological parameters with harsh technological conditions, the preparation process of the metal grating optical filter is simple, the complexity of the preparation process of the micro-silicon display panel is reduced, and the preparation cost of the micro-silicon display panel is further reduced. And the metal grating filter still keeps stable physical and chemical properties along with the change of the environmental temperature, so that the metal grating filter has stable filtering performance along with the change of the environmental temperature. Compared with an optical filter made of organic dye, the optical filter made of the organic dye has the problems of infirm curing and easy falling off.
Drawings
Fig. 1 is a schematic structural diagram of a micro silicon display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another micro silicon display panel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another micro silicon display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another micro silicon display panel according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the utility model and are not limiting of the utility model. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The embodiment of the utility model provides a micro silicon display panel. Fig. 1 is a schematic structural diagram of a micro silicon display panel according to an embodiment of the present invention. Referring to fig. 1, the micro silicon display panel includes: a silicon substrate 10; an organic light emitting device layer 20 on the surface of the silicon substrate 10; the thin film encapsulation layer 30 is positioned on the surface of the organic light-emitting device layer 20 away from the silicon substrate 10; and the metal grating filter 40 is positioned on the surface of the thin film packaging layer 30 far away from the silicon substrate 10, and the metal grating filter 40 comprises a grating structure with a preset slit width.
Illustratively, the metal grating filter 40 may be fabricated by a thermal evaporation technique. Optionally, the metal grating filter 40 may be any one of a metal gold grating filter, a metal aluminum grating filter, and a metal silver grating filter. Any one of the metal gold grating optical filter, the metal aluminum grating optical filter and the metal silver grating optical filter does not contain organic dye, the preparation method is simple, the physical and chemical properties are stable, the transmittance of light is high within a preset thickness range, and the grating structure with the preset slit width can enable light with the filtering wavelength to penetrate through the metal grating optical filter 40 in a resonance state.
Specifically, the thin film encapsulation layer 30 may be an organic film layer, an inorganic film layer, or a stacked structure formed by the organic film layer and the inorganic film layer, and is used for preventing external water and oxygen from entering the organic light emitting device layer 20. The thin film encapsulation layer 30 may be a stack structure of alumina/titania/silica, for example.
In the technical solution provided in this embodiment, the metal grating filter 40 includes a grating structure with a predetermined slit width, so that light emitted from the organic light emitting device layer 20 can be emitted through the metal grating filter 40 in a resonant state. Because the light emitted by the organic light emitting device layer 20 is emitted through the metal grating filter 40 in a resonant state, the light intensity of the light emitted from the metal grating filter 40 is enhanced, and the image display quality of the micro-silicon display panel is further improved. And the filtering wavelength of the metal grating filter 40 can be adjusted by adjusting the slit width of the grating structure of the metal grating filter 40. The metal grating filter 40 does not involve organic dye, and can reduce the pollution degree to the environment in the manufacturing process of the micro-silicon display panel. Compared with the optical filter made of organic dye, the optical filter needs the photoetching technological parameters with harsh technological conditions, the preparation process of the metal grating optical filter 40 is simple, the complexity of the preparation process of the micro-silicon display panel is reduced, and the preparation cost of the micro-silicon display panel is further reduced. And the metal grating filter 40 still keeps stable physicochemical properties along with the change of the ambient temperature, so that the metal grating filter 40 has stable filtering properties along with the change of the ambient temperature. Compared with the optical filter made of organic dye, the optical filter has the problems of weak solidification and easy falling, the metal grating optical filter 40 is made by a thermal evaporation process, and the metal grating optical filter 40 is not easy to fall from the surface of the organic light-emitting device layer 20.
Fig. 2 is a schematic structural diagram of another micro silicon display panel according to an embodiment of the present invention. Optionally, referring to fig. 2, the metal grating filter 40 includes at least one of a red metal grating filter 40A, a green metal grating filter 40B, and a blue metal grating filter 40C.
Specifically, the light emitted from the organic light emitting device layer 20 passes through the red metal grating filter 40A and exits as red light. The light emitted from the organic light emitting device layer 20 passes through the green metal grating filter 40B to be emitted as green light. The light emitted from the organic light emitting device layer 20 passes through the blue metal grating filter 40C to be emitted as blue light. The positions and the number of the red metal grating filter 40A, the green metal grating filter 40B and the blue metal grating filter 40C are reasonably configured, so that the micro-silicon display panel can display a colorful picture.
Alternatively, referring to fig. 2, the slit width of the metal grating filter 40 is positively correlated with the filtering wavelength of the metal grating filter 40.
Illustratively, the slit width of the red metal grating filter 40A is greater than the slit width of the green metal grating filter 40B, and the slit width of the green metal grating filter 40B is greater than the slit width of the blue metal grating filter 40C. Correspondingly, in visible light, the wavelength of red light is greater than that of green light, and the wavelength of green light is greater than that of blue light.
Specifically, according to the rule that the slit width of the metal grating filter 40 is in positive correlation with the filtering wavelength of the metal grating filter 40, the slit width of the metal grating filter 40 can be reasonably set, the metal grating filter 40 with the preset filtering wavelength can be conveniently and simply prepared, compared with the existing filter, the change of the filtering wavelength is realized by changing the proportion of organic dye, and the manufacturing process is simplified.
Optionally, referring to fig. 2, the slit width of the red metal grating filter 40A is greater than or equal to 390nm and less than or equal to 430 nm.
Specifically, when the width of the predetermined slit of the red metal grating filter 40A is greater than or equal to 390nm and less than or equal to 430nm, the light emitted from the organic light emitting device layer 20 passes through the red metal grating filter 40A and exits as red light.
The inventors have found through careful study that the transmittance of the metal grating filter 40 to light within a predetermined thickness range is good, and if the slit width of the red metal grating filter 40A is smaller than 390nm, or larger than 430nm, the light emitted from the organic light emitting device layer 20 passes through the red metal grating filter 40A and does not exit as red light.
Optionally, referring to fig. 2, the width of the predetermined slit of the green metal grating filter 40B is greater than or equal to 320nm and less than or equal to 340 nm.
Specifically, the width of the predetermined slit of the green metal grating filter 40B is greater than or equal to 320nm and less than or equal to 340nm, and the light emitted from the organic light emitting device layer 20 passes through the green metal grating filter 40B and is emitted as green light.
The inventors have found through careful study that the metal grating filter 40 has a good transmittance to light within a predetermined thickness range, and if the green metal grating filter 40B has a predetermined slit width smaller than 320nm or larger than 340nm, the light emitted from the organic light emitting device layer 20 passes through the green metal grating filter 40B and is not emitted as green light.
Optionally, referring to fig. 2, the width of the preset slit of the blue metal grating filter 40C is greater than or equal to 270nm and less than or equal to 300 nm.
Specifically, the width of the preset slit of the blue metal grating filter 40C is greater than or equal to 270nm and less than or equal to 300nm, and the light emitted by the organic light emitting device layer 20 passes through the blue metal grating filter 40C and is emitted as blue light.
The inventors have found through careful study that the transmittance of the metal grating filter 40 to light within a predetermined thickness range is good, and if the slit width of the blue metal grating filter 40C is smaller than 270nm, or larger than 300nm, the light emitted from the organic light emitting device layer 20 passes through the blue metal grating filter 40C and does not exit as blue light.
Fig. 3 is a schematic structural diagram of another micro silicon display panel according to an embodiment of the present invention. Optionally, referring to fig. 3, a package cover plate 50 is further included, and the package cover plate 50 is located on a surface of the metal grating filter 40 away from the silicon substrate 10.
The package cover 50 illustratively comprises a glass cover. Specifically, the package cover 50 is used to prevent external water and oxygen from entering the organic light emitting device layer 20 through the metal grating filter 40.
Alternatively, referring to fig. 2 and 3, the thickness of the metal grating filter 40 is greater than or equal to 10nm and less than or equal to 40 nm.
Specifically, when the thickness of the metal grating filter 40 is less than 10nm, the thickness is too thin, the mechanical strength is not sufficient, and the metal grating filter is easily damaged by external force. When the thickness of the metal grating filter 40 is greater than 40nm, the transmittance of the metal grating filter 40 to light is reduced. The thickness of the metal grating filter 40 is greater than or equal to 10nm and less than or equal to 40nm, so that the metal grating filter has preset mechanical strength, is not easy to be damaged by external force, and can keep high transmittance for light.
Alternatively, referring to fig. 2 and 3, the organic light emitting device layer 20 includes a white organic light emitting device layer.
Specifically, the organic light emitting device layer 20 includes a white organic light emitting device layer, which is white light including red, green and blue lights, and the positions and the numbers of the red metal grating filter 40A, the green metal grating filter 40B and the blue metal grating filter 40C can be reasonably configured, so that the display panel can display a color picture.
Fig. 4 is a schematic structural diagram of another micro silicon display panel according to an embodiment of the present invention. Alternatively, referring to fig. 4, the organic light emitting device layer 20 includes a plurality of discrete anodes 210, light emitting layers 211 and cathode layers 212, each anode 210, and the light emitting layer 211 and the cathode layer 212 corresponding to the anode 210 constitute a light emitting unit. The light emitting layer 211 may include a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked, wherein the hole injection layer contacts the anode 210, and the electron injection layer contacts the cathode layer 212. The carriers reach the organic light-emitting layer from the hole injection layer and the electron injection layer through the transmission of the hole transport layer and the electron transport layer to carry out compound light emission. A driving circuit for driving the light emitting cells is provided on the silicon substrate 10. Wherein the silicon substrate 10 is provided with a via 10A, and an electrical signal on the side of the silicon substrate 10 adjacent to the anode 210 is led to the surface of the silicon substrate 10 away from the anode 210.
A silicon material is used as an active layer on a silicon substrate 10, and a driving circuit is formed by a CMOS integrated circuit process, wherein the driving circuit comprises a thin film transistor which has high carrier mobility and smaller threshold voltage drift. Therefore, the display panel including the silicon substrate 10 has advantages of long lifetime, small volume, light weight, high product yield, low power consumption, and the like.
Optionally, referring to fig. 4, the micro silicon display panel further includes a printed circuit board 60, where the printed circuit board 60 is located on a surface of the silicon substrate 10 on a side away from the organic light emitting device layer 20. The printed circuit board 60 is provided with a pad, and the pad is electrically connected to the driving circuit on the silicon substrate 10 through the via hole 10A, and is used for providing a driving signal for the driving circuit to display a picture on the micro silicon display panel.
The display panel including the silicon substrate 10 is referred to as a micro silicon display panel. The micro silicon display panel has the advantages of long service life, small volume, light weight, high product yield, low energy consumption and the like, and is more and more widely applied to display devices such as smart phones and smart wearable displays.
The embodiment of the utility model also provides a micro silicon display. The micro silicon display comprises the micro silicon display panel in any of the technical schemes. The micro silicon display provided by the embodiment of the utility model comprises the micro silicon display panel, so that the beneficial effects of the micro silicon display panel are achieved, and the details are not repeated. The micro silicon display can be suitable for display devices such as smart phones and VR/AR.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the utility model. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A micro silicon display panel, comprising:
a silicon substrate;
an organic light-emitting device layer located on the surface of the silicon substrate;
the thin film packaging layer is positioned on the surface of the organic light-emitting device layer far away from the silicon substrate;
and the metal grating filter is positioned on the surface of the thin film packaging layer far away from the silicon substrate, and comprises a grating structure with a preset slit width.
2. The micro silicon display panel of claim 1, wherein the metal grating filter comprises at least one of a red metal grating filter, a green metal grating filter, and a blue metal grating filter.
3. The micro silicon display panel of claim 1, wherein the slit width of the metal grating filter is positively correlated to the filtering wavelength of the metal grating filter.
4. The micro silicon display panel of claim 2, wherein the red metal grating filter predetermined slit width is greater than or equal to 390nm and less than or equal to 430 nm.
5. The micro silicon display panel of claim 2, wherein the green metal grating filter preset slit width is greater than or equal to 320nm and less than or equal to 340 nm.
6. The micro silicon display panel of claim 2, wherein the blue metal grating filter predetermined slit width is greater than or equal to 270nm and less than or equal to 300 nm.
7. The micro silicon display panel of claim 1, further comprising an encapsulation cover plate on a surface of the metal grating filter away from the silicon substrate.
8. The micro silicon display panel of claim 1, wherein the thickness of the metal grating filter is greater than or equal to 10nm and less than or equal to 40 nm.
9. The micro silicon display panel of claim 1, wherein the organic light emitting device layer comprises a white light organic light emitting device layer.
10. A microsilica display comprising a microsilica display panel as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121822744.3U CN215418220U (en) | 2021-08-05 | 2021-08-05 | Micro silicon display panel and micro silicon display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121822744.3U CN215418220U (en) | 2021-08-05 | 2021-08-05 | Micro silicon display panel and micro silicon display |
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| Publication Number | Publication Date |
|---|---|
| CN215418220U true CN215418220U (en) | 2022-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202121822744.3U Active CN215418220U (en) | 2021-08-05 | 2021-08-05 | Micro silicon display panel and micro silicon display |
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| CN (1) | CN215418220U (en) |
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- 2021-08-05 CN CN202121822744.3U patent/CN215418220U/en active Active
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