CN212460196U - Micro display - Google Patents

Abstract

The utility model discloses a micro display, this micro display includes: a display panel including a pixel unit layer composed of a plurality of pixel units; the prism is positioned on the surface of the pixel unit layer and used for changing the propagation direction of the light emitted by the pixel unit; the reflective micro-nano structure color filter is used for recovering light emitted by a pixel unit to the initial propagation direction and emitting the light at the filtering wavelength. The embodiment of the utility model provides a technical scheme has reduced the pollution degree to the environment in the micro display manufacture process.

Description

Micro display

Technical Field

The embodiment of the utility model provides a relate to semiconductor technology field, especially relate to a micro display.

Background

Microdisplays are becoming more and more popular for use in head mounted displays as well as head mounted displays due to their small size and light weight.

In the existing micro display, light emitted from a pixel unit is converted into light of a specific color through a filter. The existing optical filter includes an organic dye, which causes serious environmental pollution.

SUMMERY OF THE UTILITY MODEL

In view of this, the embodiment of the present invention provides a microdisplay, which reduces the pollution level to the environment in the microdisplay manufacturing process.

An embodiment of the utility model provides a micro display, include:

a display panel including a pixel unit layer composed of a plurality of pixel units;

a prism located over a first surface of the layer of pixel cells, the prism for changing a direction of propagation of light emitted by the pixel cells;

and the reflective micro-nano structure color filter is used for recovering the light emitted by the pixel unit to the initial propagation direction and emitting the light at the filtering wavelength.

Optionally, the prism includes a total reflection prism, the total reflection prism includes at least one right-angle side, and the at least one right-angle side of the total reflection prism is arranged in parallel with the pixel unit layer.

Optionally, the reflective micro-nanostructure color filter includes one or more of a red reflective micro-nanostructure color filter, a green reflective micro-nanostructure color filter, and a blue reflective micro-nanostructure color filter.

Optionally, the reflective micro-nanostructure color filter includes a first substrate, and a bottom metal layer, a dielectric layer, and a top metal layer, which are sequentially stacked on the surface of the first substrate, where the thickness of the bottom metal layer is greater than that of the top metal layer.

Optionally, the thickness of the dielectric layer is in direct proportion to the filtering wavelength of the reflective micro-nanostructure color filter.

Optionally, the bottom metal layer comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer and a magnesium-silver alloy bottom metal layer; and/or the presence of a gas in the gas,

the top metal layer comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer and a magnesium-silver alloy bottom metal layer.

Optionally, the dielectric layer includes a silicon oxide dielectric layer or an amorphous silicon dielectric layer.

Optionally, the reflective micro-nanostructure color filter includes a second substrate, and a waveguide layer and a waveguide grating layer with a preset slit width, which are sequentially stacked on the surface of the second substrate.

Optionally, the width of the preset slit of the waveguide grating layer is directly proportional to the filtering wavelength of the reflective micro-nanostructure color filter.

Optionally, the preset slit width of the waveguide grating layer includes one or more of 274 nanometers, 327 nanometers, and 369 nanometers.

Optionally, the waveguide layer comprises a silicon nitride waveguide layer; and/or the waveguide grating layer comprises a silicon nitride waveguide grating layer.

Optionally, the pixel unit layer includes a silicon substrate and a light emitting device layer on a surface of the silicon substrate.

Optionally, the display panel further comprises a printed circuit board located on the first surface of the pixel unit layer.

Optionally, the display panel further comprises a thin film encapsulation layer and a cover plate;

the thin film packaging layer is positioned on a second surface, opposite to the first surface, of the pixel unit layer;

the cover plate is positioned on one side of the thin film packaging layer, which is far away from the pixel unit layer.

In the technical scheme provided by this embodiment, light emitted from the pixel unit passes through the prism and is reflected to the reflective micro-nanostructure color filter through the prism, and light with a filtering wavelength in the light emitted from the pixel unit is transmitted in a resonant state in the reflective micro-nanostructure color filter and is restored to an initial transmission direction to be emitted with the filtering wavelength, so that the light intensity of the light is greatly enhanced, and the image display quality of the micro-display is improved. The reflective micro-nano structure color filter does not relate to organic dye, and can reduce the pollution degree to the environment in the micro-display manufacturing process. Compared with an optical filter comprising organic dye, the reflective micro-nano structure color optical filter still keeps stable physicochemical properties along with the change of the environmental temperature, so that the reflective micro-nano structure color optical filter has stable optical filtering performance along with the change of the environmental temperature. In addition, compared with the technical scheme of directly manufacturing the optical filter in the display panel, in the embodiment, the prism and the reflective micro-nanostructure color optical filter do not need to be integrated in the display panel, so that the adverse effect on the display picture of the pixel unit in the display panel due to too many film layers manufactured in the display panel can be avoided, and the picture display quality of the micro-display is improved.

Drawings

Fig. 1 is a schematic structural diagram of a microdisplay according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

As described in the background art, the existing micro display device has serious environmental pollution caused by the preparation process of the optical filter. For this reason, the conventional micro display device employs an absorption color filter, which includes an organic dye, and absorbs incident light with different wavelengths to display a specific color. And the preparation process of the organic dye has serious environmental pollution.

To the above technical problem, the embodiment of the utility model provides a following technical scheme:

fig. 1 is a schematic structural diagram of a microdisplay according to an embodiment of the present invention. Referring to fig. 1, the microdisplay includes: a display panel 10, the display panel 10 including a pixel unit layer 11 composed of a plurality of pixel units 11A; a prism 20, the prism 20 being located on the first surface of the pixel unit layer 11, the prism 20 being used to change the propagation direction of the light emitted from the pixel unit 11A; the reflective micro-nanostructure color filters 30 are used for restoring light emitted by a pixel unit 11A to an initial propagation direction and emitting the light with a filtering wavelength.

Specifically, light emitted from the pixel unit 11A passes through the prism 20, is reflected to the reflective micro-nanostructure color filter 30 through the prism 20, and light with a filter wavelength among the light emitted from the pixel unit 11A propagates in the reflective micro-nanostructure color filter 30 in a resonant state, and is emitted with the filter wavelength. It should be noted that, light with the filtering wavelength is transmitted in the reflective micro-nanostructure color filter 30 in a resonant state, and the light intensity thereof is greatly enhanced, thereby improving the image display quality of the micro-display.

In the technical scheme provided by this embodiment, light emitted from the pixel unit 11A passes through the prism 20 and is reflected to the reflective micro-nanostructure color filter 30 through the prism 20, and light with a filtering wavelength in the light emitted from the pixel unit 11A is transmitted in a resonant state in the reflective micro-nanostructure color filter 30 and is restored to an initial transmission direction to be emitted with the filtering wavelength, so that the light intensity thereof is greatly enhanced, and the image display quality of the micro-display is further improved. The reflective micro-nanostructure color filter 30 does not involve organic dyes, and can reduce the pollution degree to the environment in the micro-display manufacturing process. Compared with the filter including the organic dye, the reflective micro-nanostructure color filter 30 still maintains stable physicochemical properties with the change of the ambient temperature, so that the reflective micro-nanostructure color filter 30 has stable filtering properties with the change of the ambient temperature. In addition, compared with the technical scheme of directly manufacturing the optical filter in the display panel, in this embodiment, the prism 20 and the reflective micro-nanostructure color filter 30 do not need to be integrated in the display panel, which can avoid the adverse effect on the display picture of the pixel unit 11A in the display panel caused by manufacturing too many film layers in the display panel, so as to improve the picture display quality of the microdisplay.

Alternatively, referring to fig. 1, the prism 20 includes a total reflection prism including at least one right-angled side, and the at least one right-angled side of the total reflection prism is disposed in parallel with the pixel unit layer 11.

Specifically, the light emitted from the pixel unit 11A can be totally reflected to the reflective micro-nanostructure color filter 30 through the prism 20 with high efficiency by utilizing the total reflection characteristic of the total emission prism, and the light with the filtering wavelength among the light emitted from the pixel unit 11A propagates in the reflective micro-nanostructure color filter 30 in a resonance state and returns to the original propagation direction to be emitted with the filtering wavelength.

In order to enable the microdisplay to display a colorful picture, the present embodiment provides the following technical solutions:

fig. 2 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention. Optionally, referring to fig. 2, the reflective micro-nanostructure color filter 30 comprises one or more of a red reflective micro-nanostructure color filter 30A, a green reflective micro-nanostructure color filter 30B, and a blue reflective micro-nanostructure color filter 30C.

Specifically, light emitted from the pixel unit 11A is reflected to the red reflective micro-nanostructure color filter 30A through the prism 20, and is emitted as red light. The light emitted from the pixel unit 11A is reflected to the green reflective micro-nanostructure color filter 30B through the prism 20 and emitted as green light. The light emitted from the pixel unit 11A is reflected to the blue reflective micro-nanostructure color filter 30C by the prism 20 and emitted as blue light. Illustratively, the pixel units 11A included in the pixel unit layer 11 emit white light uniformly, and the positions and the numbers of the red reflective micro-nanostructure color filter 30A, the green reflective micro-nanostructure color filter 30B and the blue reflective micro-nanostructure color filter 30C are configured appropriately, so that the micro-display can display a color picture.

The specific structure of the reflective micro-nanostructure color filter 30 is described in detail below.

Fig. 3 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention. Optionally, referring to fig. 3, the reflective micro-nanostructure color filter 30 includes a first substrate 31, and a bottom metal layer 32A, a dielectric layer 32B, and a top metal layer 32C, which are sequentially stacked on the surface of the first substrate 31, where the thickness of the bottom metal layer 32A is greater than that of the top metal layer 32C.

Illustratively, the underlying metal layers 32A are shown in fig. 3 as being discrete and spaced apart. It should be noted that the bottom metal layer 32A may also be continuous. The first substrate 31 may be a silicon substrate. In this embodiment, the dielectric layer 32B may be prepared by a plasma enhanced chemical vapor deposition method. The bottom metal layer 32A and the top metal layer 32C may be prepared using a thermal evaporation technique.

Specifically, the thickness of the bottom metal layer 32A is greater than that of the top metal layer 32C, so that light emitted by the pixel unit 11A is reflected to the reflective micro-nanostructure color filter 30 after passing through the prism 20, and is transmitted into the dielectric layer 32B from the top metal layer 32C, light with a filtering wavelength in the light emitted by the pixel unit 11A is transmitted in the dielectric layer 32B in a resonant state, and then is emitted through the top metal layer 32C by reflection of the bottom metal layer 32A, and the light intensity of the light is greatly enhanced, thereby improving the image display quality of the microdisplay.

It should be noted that dielectric layer 32B has a dielectric constant greater than that of bottom metal layer 32A and top metal layer 32C, and therefore allows light of a filtered wavelength to propagate in dielectric layer 32B in a resonant state. The thickness of the dielectric layer 32B is related to the filtering wavelength, so the filtering wavelength of the reflective micro-nanostructure color filter 30 composed of the bottom metal layer 32A, the dielectric layer 32B and the top metal layer 32C can be adjusted by adjusting the thickness of the dielectric layer 32B.

The reflective micro-nanostructure color filter 30 includes a bottom metal layer 32A, a dielectric layer 32B, and a top metal layer 32C, which are sequentially stacked, wherein the bottom metal layer 32A, the dielectric layer 32B, and the top metal layer 32C form a Fabry-perot (Fabry-perot) interference filter. Light emitted by the pixel unit 11A is reflected to the reflective micro-nanostructure color filter 30 after passing through the prism 20, enters the dielectric layer 32B from the top metal layer 32C, light with a filtering wavelength in the light emitted by the pixel unit 11A is transmitted in the dielectric layer 32B in a resonance state, and then passes through the top metal layer 32C to be emitted with light with a filtering wavelength through the reflection action of the bottom metal layer 32A, so that the light intensity is greatly enhanced, and the image display quality of the micro-display is improved. The bottom metal layer 32A, the dielectric layer 32B and the top metal layer 32C do not involve organic dyes, and therefore the pollution degree of the micro-display to the environment in the manufacturing process can be reduced. Compared with the optical filter comprising the organic dye, the reflective micro-nanostructure color optical filter 30 formed by the bottom metal layer 32A, the dielectric layer 32B and the top metal layer 32C still keeps stable physicochemical properties along with the change of the environmental temperature, so that the reflective micro-nanostructure color optical filter 30 has stable optical filtering performance along with the change of the environmental temperature.

Since the thickness of the dielectric layer 32B is related to the filtering wavelength of the reflective micro-nanostructure color filter 30, a technical solution for adjusting the filtering wavelength of the reflective micro-nanostructure color filter 30 by adjusting the thickness of the dielectric layer 32B is specifically described as follows:

optionally, the thickness of the dielectric layer 32B is proportional to the filtering wavelength of the reflective micro-nanostructure color filter 30.

Referring to fig. 3, in the red reflective micro-nanostructure color filter 30A, the green reflective micro-nanostructure color filter 30B, and the blue reflective micro-nanostructure color filter 30C, the thickness of the dielectric layer 32B of the red reflective micro-nanostructure color filter 30A is greater than the thickness of the dielectric layer 32B of the green reflective micro-nanostructure color filter 30B, and the thickness of the dielectric layer 32B of the green reflective micro-nanostructure color filter 30B is greater than the thickness of the dielectric layer 32B of the blue reflective micro-nanostructure color filter 30C. Illustratively, the dielectric layer 32B of the red reflective micro-nanostructure color filter 30A has a thickness of about 28 nanometers. The thickness of the dielectric layer 32B of the green reflective micro-nanostructure color filter 30B is about 15 nm, and the thickness of the dielectric layer 32B of the blue reflective micro-nanostructure color filter 30C is about 9 nm. Specifically, the thickness of the dielectric layer 32B is in direct proportion to the filtering wavelength of the reflective micro-nanostructure color filter 30, and the filter with the preset filtering wavelength can be conveniently and simply prepared by controlling the variation of the thickness of the dielectric layer 32B.

Optionally, the bottom metal layer 32A includes one or more of a silver bottom metal layer, an aluminum bottom metal layer, and a magnesium-silver alloy bottom metal layer; and/or top metal layer 32C includes one or more of a silver bottom metal layer, an aluminum bottom metal layer, and a magnesium-silver alloy bottom metal layer.

Specifically, the silver bottom metal layer, the aluminum bottom metal layer and the magnesium-silver alloy bottom metal layer have good reflection performance within a preset thickness range, light with filtering wavelength is favorably reflected back to the top metal layer 32C to be emitted out with the light with filtering wavelength, the material price is low, and the production cost of the reflective micro-nanostructure color filter is reduced.

Specifically, the top silver layer metal layer, the top aluminum layer metal layer and the top magnesium-silver alloy layer have good light transmittance within a preset thickness range, so that light emitted by the pixel unit 11A can enter the dielectric layer 32B through the top metal layer 32C to be transmitted in a resonant state, the material price is low, and the production cost of the optical filter is reduced.

It should be noted that the bottom metal layer 32A and the top metal layer 32C provided in the embodiments of the present invention include, but are not limited to, the film layers made of the above materials.

Alternatively, referring to fig. 3, the dielectric layer 32B includes a silicon oxide dielectric layer or an amorphous silicon dielectric layer.

Specifically, the dielectric constant of the silicon oxide dielectric layer or the amorphous silicon dielectric layer is relatively high, which is helpful for the light with the filtering wavelength to propagate in the dielectric layer 32B, and the light does not exit from the dielectric layer 32B in the process of propagation. It should be noted that the dielectric layer 32B provided in the embodiment of the present invention includes, but is not limited to, a film layer made of the above material.

Fig. 4 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention. Alternatively, referring to fig. 4, the reflective micro-nanostructure color filter 30 includes a second substrate 33, and a waveguide layer 34A and a waveguide grating layer 34B with a preset slit width, which are sequentially stacked on the surface of the second substrate 33.

For example, the second substrate 33 may be a silicon substrate. The waveguide layer 34A and the waveguide grating layer 34B may be prepared by a plasma enhanced chemical vapor deposition method in the present embodiment.

The light emitted by the pixel unit 11A is reflected to the reflective micro-nanostructure color filter 30 through the prism 20, the light with the filtering wavelength in the light emitted by the pixel unit 11A propagates in the waveguide layer 34A in a resonant state, and the filtering wavelength of the reflective micro-nanostructure color filter 30 can be adjusted by adjusting the width of the preset slit of the waveguide grating layer 34B, and finally the light is emitted from the waveguide grating layer 34B with the filtering wavelength, so that the light intensity is greatly enhanced, and the image display quality of the micro-display is improved. The waveguide layer 34A and the waveguide grating layer 34B with the preset slit width do not relate to organic dye, so that the pollution degree to the environment in the micro display manufacturing process can be reduced. Compared with the optical filter comprising organic dye, the reflective micro-nanostructure color filter 30 formed by the waveguide layer 34A and the waveguide grating layer 34B with the preset slit width still keeps stable physicochemical properties along with the change of the environmental temperature, so that the reflective micro-nanostructure color filter 30 has stable filtering performance along with the change of the environmental temperature.

Since the preset slit width of the waveguide grating layer 34B is related to the filtering wavelength of the reflective micro-nanostructure color filter 30, a technical solution for adjusting the filtering wavelength of the reflective micro-nanostructure color filter 30 by adjusting the preset slit width of the waveguide grating layer 34B is specifically described below:

optionally, the preset slit width of the waveguide grating layer 34B is proportional to the filtering wavelength of the reflective micro-nanostructure color filter 30.

Referring to fig. 4, in the red reflective micro-nanostructure color filter 30A, the green reflective micro-nanostructure color filter 30B, and the blue reflective micro-nanostructure color filter 30C, the preset slit width of the waveguide grating layer 34B of the red reflective micro-nanostructure color filter 30A is greater than the preset slit width of the waveguide grating layer 34B of the green reflective micro-nanostructure color filter 30B, and the preset slit width of the waveguide grating layer 34B of the blue reflective micro-nanostructure color filter 30C is greater than the preset slit width of the waveguide grating layer 34B of the blue reflective micro-nanostructure color filter 30C.

Specifically, the width of the preset slit of the waveguide grating layer 34B is in direct proportion to the filtering wavelength of the reflective micro-nanostructure color filter 30, and the filter with the preset filtering wavelength can be conveniently and simply prepared by controlling the variation of the width of the preset slit of the waveguide grating layer 34B.

Optionally, the preset slit width of the waveguide grating layer 34B includes one or more of 274 nanometers, 327 nanometers, and 369 nanometers. Specifically, the preset slit width of the waveguide grating layer 34B of the red reflective micro-nanostructure color filter 30A is 369 nanometers, the preset slit width of the waveguide grating layer 34B of the green reflective micro-nanostructure color filter 30B is 327 nanometers, and the preset slit width of the waveguide grating layer 34B of the blue reflective micro-nanostructure color filter 30C is 274 nanometers. Illustratively, the pixel units 11A included in the pixel unit layer 11 emit white light uniformly, and the positions and the numbers of the red reflective micro-nanostructure color filter 30A, the green reflective micro-nanostructure color filter 30B and the blue reflective micro-nanostructure color filter 30C are configured appropriately, so that the micro-display can display a color picture.

Optionally, waveguide layer 34A comprises a silicon nitride waveguide layer; and/or the waveguide grating layer 34B comprises a silicon nitride waveguide grating layer.

It should be noted that the waveguide layer 34A and the waveguide grating layer 34B provided in the embodiments of the present invention include, but are not limited to, film layers made of the above materials.

In the above technical solution, light emitted from the pixel unit 11A in the pixel unit layer 11 is reflected to the reflective micro-nanostructure color filter 30 through the prism 20 and converted into light of a specific color, so as to complete the image display of the micro display. The specific structure inside the pixel unit layer 11 will be described in detail below.

Fig. 5 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention. Referring to fig. 5, the pixel unit layer 11 includes a silicon substrate 110 and a light emitting device layer 120, and the light emitting device layer 120 is located on a surface of the silicon substrate 110.

It should be noted that the light-emitting device layer 120 includes a plurality of discrete anodes 121, light-emitting layers 122, and cathode layers 123, and each anode 121, and the light-emitting layer 122 and the cathode layer 123 corresponding to the anode 121 constitute one pixel unit 11A. The light emitting layer 122 may include a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer, which are sequentially stacked, wherein the hole injection layer contacts the anode 121, and the electron injection layer contacts the cathode 123. The carriers reach the organic light-emitting layer from the hole injection layer and the electron injection layer through the transmission of the hole transport layer and the electron transport layer to carry out compound light emission. A driving circuit for driving the pixel unit 11A is provided on the silicon substrate 110. Wherein the silicon substrate 110 is provided with a via 110A, which leads an electrical signal from the side of the silicon substrate 110 adjacent to the anode 121 to the surface of the silicon substrate 110 remote from the anode 121.

The driving circuit is formed by a CMOS integrated circuit process using a silicon material as an active layer on a silicon substrate 110, wherein the driving circuit includes a thin film transistor having a high carrier mobility and a threshold voltage with less drift. The advantages of the CMOS integrated circuit rather than the thin film transistor process used for manufacturing the driving circuit on the silicon substrate 110 are as follows: 1. in the production process of the thin film transistor, the characteristic dimension of the thin film transistor is relatively large, usually several to tens of micrometers, while the silicon material is used as an active layer to form the driving circuit through the CMOS integrated circuit process, the size of the prepared driving transistor can be reduced to be below micrometers, correspondingly, the pixel units 11A with the spacing of about ten micrometers can be formed on the surface of the silicon substrate 110, and the size of the whole display panel is greatly reduced. 2. The CMOS integrated circuit technology is mature, and can be produced by an integrated circuit foundry, so that the product yield is high. 3. The CMOS integrated circuit process has low energy consumption. Therefore, the display panel including the silicon substrate 110 has advantages of long lifetime, small volume, light weight, high product yield, low power consumption, and the like.

The display panel including the silicon substrate 110 is referred to as a silicon-based display panel. Silicon-based display panels are increasingly widely used in display devices such as smart phones and smart wearable displays due to their advantages of long service life, small size, light weight, high product yield, low energy consumption, etc.

The embodiment of the utility model provides a still provide a preparation method of pixel unit layer, this method includes: providing a silicon substrate, defining a plurality of pixel unit areas on the silicon substrate, and preparing a light-emitting device layer in the pixel unit areas. The preparation process of the light-emitting device layer comprises the following steps: an anode, a light emitting layer and a cathode layer are prepared in the pixel unit area.

Optionally, referring to fig. 5, the display panel further includes a printed circuit board 12, and the printed circuit board 12 is located on the first surface of the pixel unit layer 11.

The printed circuit board 12 is provided with a pad, which is electrically connected to the driving circuit on the silicon substrate 110 through the via 110A, and is used for providing a driving signal to the driving circuit to display a picture on the display panel.

Optionally, referring to fig. 5, the display panel further includes a thin film encapsulation layer 13 and a cover plate 14; the thin film packaging layer 13 is positioned on a second surface of the pixel unit layer 11 opposite to the first surface; the cover plate 14 is located on the side of the thin film encapsulation layer 13 away from the pixel unit layer 11.

Specifically, the thin film encapsulation layer 13 may be an organic film layer, an inorganic film layer, or a stacked structure formed by the organic film layer and the inorganic film layer, and is used for preventing external water and oxygen from invading into the pixel unit layer 11. The thin film encapsulation layer 13 may be a stack structure of alumina/titania/silica as an example. The cover plate 14 illustratively comprises a glass cover plate. Wherein an adhesive layer 15 is arranged between the cover plate 14 and the film encapsulation layer 13 for fixing the cover plate 14 to the surface of the film encapsulation layer 13. Illustratively, the adhesive layer 15 may be selected from an Ultraviolet Rays (UV) glue. The shadowless adhesive is also called photosensitive adhesive and ultraviolet light curing adhesive, and is a kind of adhesive which can be cured only by ultraviolet light irradiation.

It should be noted that the present invention shows an exemplary display panel including a microdisplay, in which 3 pixel units 11A are shown.

An embodiment of the present invention provides a display panel that a Micro display includes, which may be an Organic Light-Emitting Diode (OLED) display panel or an Organic Light-Emitting Diode Micro display panel (Micro-OLED).

It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.

Claims (14)

1. A microdisplay, comprising:

a display panel including a pixel unit layer composed of a plurality of pixel units;

a prism located over a first surface of the layer of pixel cells, the prism for changing a direction of propagation of light emitted by the pixel cells;

and the reflective micro-nano structure color filter is used for recovering the light emitted by the pixel unit to the initial propagation direction and emitting the light at the filtering wavelength.

2. The microdisplay of claim 1 in which the prism comprises a total reflection prism comprising at least one right-angled side, the at least one right-angled side of the total reflection prism being disposed parallel to the layer of pixel cells.

3. The microdisplay of claim 1, wherein the reflective micro-nanostructure color filter comprises one or more of a red reflective micro-nanostructure color filter, a green reflective micro-nanostructure color filter, and a blue reflective micro-nanostructure color filter.

4. The microdisplay of claim 1, wherein the reflective micro-nanostructure color filter comprises a first substrate, and a bottom metal layer, a dielectric layer and a top metal layer on the surface of the first substrate, wherein the bottom metal layer is thicker than the top metal layer.

5. The microdisplay of claim 4 in which the dielectric layer has a thickness that is proportional to the filter wavelength of the reflective micro-nanostructure color filter.

6. The microdisplay of claim 4 in which the underlying metal layer comprises one or more of a silver underlying metal layer, an aluminum underlying metal layer and a magnesium-silver alloy underlying metal layer; and/or the presence of a gas in the gas,

the top metal layer comprises one or more of a silver bottom metal layer, an aluminum bottom metal layer and a magnesium-silver alloy bottom metal layer.

7. The microdisplay of claim 4, wherein the dielectric layer comprises a silicon oxide dielectric layer or an amorphous silicon dielectric layer.

8. The microdisplay of claim 1 in which the reflective micro-nanostructure color filter comprises a second substrate and a waveguide layer and a waveguide grating layer of predetermined slit width on the surface of the second substrate, which are sequentially stacked.

9. The microdisplay of claim 8 in which the preset slit width of the waveguide grating layer is directly proportional to the filter wavelength of the reflective micro-nanostructure color filter.

10. The microdisplay of claim 8, wherein the preset slit width of the waveguide grating layer comprises one or more of 274 nanometers, 327 nanometers, and 369 nanometers.

11. The microdisplay of claim 8 in which the waveguide layer comprises a silicon nitride waveguide layer; and/or the waveguide grating layer comprises a silicon nitride waveguide grating layer.

12. The microdisplay of claim 1 in which the pixel cell layer comprises a silicon substrate and a light emitting device layer on a surface of the silicon substrate.

13. The microdisplay of claim 1 in which the display panel further comprises a printed circuit board at the first surface of the layer of pixel cells.

14. The microdisplay of claim 1 in which the display panel further comprises a thin film encapsulation layer and a cover plate;

the thin film packaging layer is positioned on a second surface, opposite to the first surface, of the pixel unit layer;

the cover plate is positioned on one side of the thin film packaging layer, which is far away from the pixel unit layer.

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