CN215069991U - Self-aligned pixel definition layer structure - Google Patents

Abstract

The utility model discloses a self-align pixel definition layer structure has: a substrate; the anode is provided with a series of anodes on the substrate, and a gap is reserved between every two adjacent anodes; a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel definition layer is flush with the side wall of the anode; the pixel definition layer is formed by dry etching, does not occupy an anode region, does not influence the opening area, and is favorable for improving the brightness; the method saves a photoetching process, and has simpler process and lower cost.

Description

Self-aligned pixel definition layer structure

Technical Field

The utility model belongs to the technical field of little display screen, especially, relate to a self-aligning pixel definition layer structure.

Background

In the display, a Pixel Definition Layer (PDL) is used to define the pixel region, isolate the pixels, and prevent optical and electrical crosstalk.

In realizing the utility model discloses an in-process, utility model human finds that prior art has following problem at least: generally, a photoetching and etching process is used, in order to avoid deviation caused by photoetching alignment deviation, a certain overlap (overlap) exists between PDL and an anode, and the size of an overlap area is larger than the alignment precision by at least about 0.2-0.3 um. For microdisplay, since the anode pixel area is small, overlap occupies a part of the light emitting region, which results in loss of about 30% of the aperture area, resulting in reduced light emitting efficiency and reduced brightness.

SUMMERY OF THE UTILITY MODEL

The technical problem to be solved by the utility model is to provide a luminous anode structure which does not occupy the anode region, does not affect the opening area and is beneficial to improving the luminous brightness; the self-aligned pixel definition layer structure has the advantages of saving a photoetching process, simpler process and lower cost.

In order to solve the technical problem, the utility model discloses the technical scheme who adopts is: a self-aligned pixel definition layer structure having:

a substrate;

the anode is arranged on the substrate, and a gap is reserved between every two adjacent anodes;

a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel defining layer is flush with the side wall of the anode; the pixel defining layer is formed by dry etching.

The pixel defining layer material comprises silicon nitride, silicon oxide or silicon oxynitride.

One of the technical schemes has the advantages or beneficial effects that the anode area is not occupied, the opening area is not influenced, and the luminous brightness is favorably improved; the method saves a photoetching process, and has simpler process and lower cost.

Drawings

Fig. 1 is a schematic structural diagram of a self-aligned pixel definition layer structure provided in an embodiment of the present invention;

FIG. 2 is a flow chart of a process for fabricating the self-aligned pixel definition layer structure of FIG. 1;

the labels in the above figures are: 1. substrate, 2, anode, 3, pixel definition layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

Referring to fig. 1-2, a self-aligned pixel defining layer structure has:

a substrate;

the anode is provided with a series of anodes on the substrate, and a gap is reserved between every two adjacent anodes;

a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel definition layer is flush with the side wall of the anode; the pixel defining layer is formed by dry etching.

The pixel defining layer material comprises silicon nitride, silicon oxide or silicon oxynitride.

After the pixel definition layer (silicon nitride, silicon oxide or silicon oxynitride) is deposited, the anode structure is self-aligned, the PDL layer is dry etched, PDL on the side wall of the anode can be reserved due to the dry etching characteristic, then the anode is dry etched to thin the anode, a PDL groove is formed, and finally the anode structure defined by PDL is formed. 1. PDL formed by the self-alignment process does not occupy an anode region, does not affect the opening area, and is beneficial to improving the brightness of illumination. 2. The self-alignment process saves one photoetching process, and is simpler and lower in cost. 3. The self-alignment process is self-aligned by an anode structure without using photoetching, so that the difference among pixels caused by photoetching alignment deviation is avoided, and the uniformity among the pixels is better. The self-aligned pixel definition layer process solves the problem that the traditional pixel definition layer occupies a pixel area and affects the opening area to cause low brightness; the process is complex and the cost is high; the misalignment causes a problem of poor uniformity among pixels.

A processing method of the self-aligned pixel definition layer structure comprises the following steps:

1) preparing an anode on a substrate;

2) depositing a pixel defining layer on the substrate and the anode;

3) dry etching the pixel definition layer, wherein the pixel definition layer on the side wall of the anode is reserved in the dry etching process due to the dry etching characteristic;

4) and dry-etching and thinning the anode to form a groove for depositing the pixel definition layer, and finally forming an anode structure defined by the pixel definition layer.

The step 1) comprises anode deposition, photoetching, etching and stripping, and comprises the following steps:

a) sequentially depositing an ITO (indium tin oxide) -bottom layer, Al and an ITO-top layer by PVD (physical vapor deposition), wherein the thicknesses of the ITO-bottom layer, the Al and the ITO-top layer are respectively 100-500A, 500-2000A and 500-5000A, and the ITO deposition parameters are as follows: ITO target material, pressure 10-1000mT, power 500-; al deposition parameters: al target material, pressure 10-500mT, power 500-;

b) photoetching the anode of a photoetching machine, gluing: 1-5um photoresist, exposure: 100-: developing with developer for 60-300 s;

c) etching the anode by a dry etching machine, wherein dry etching parameters are as follows: pressure 10-100mT, power 100-₂The flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 20-200 s;

d) stripping the photoresist by a stripping machine, stripping by stripping liquid for 1000s at 30-80 ℃.

In the step 2), silicon nitride, silicon oxide or silicon oxynitride is deposited by CVD (chemical vapor deposition), the thickness is 500-: pressure 10-100mT, power 200-₄Flow rate of 10-200sccm, NH₃The flow rate is 10-100sccm, the temperature is 200-; silicon oxide deposition parameters: pressure 10-100mT, power 200-₄Flow rate of 10-200sccm, N₂The flow rate of O is 10-5000sccm, the temperature is 200-; deposition parameters of silicon oxynitride: pressure 10-100mT, power 200-₄Flow rate of 10-200sccm, N₂The flow rate of O is 10-400sccm, the temperature is 200-400 ℃, and the time is 10-100 s.

In the step 3), etching silicon nitride, silicon oxide or silicon oxynitride by a dry etching machine to the thickness of 500-; dry etching parameters: pressure 10-100mT, power 100-₃Gas flow rate of 10-100sccm, O₂The gas flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 100-.

In the step 4), etching and thinning the ITO by a dry etching machine; etching and thinning the top layer ITO 300-3000A, dry etching parameters: pressure 10-100mT, power 100-₂The gas flow is 10-100sccm, the HBr gas flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 20-200 s.

After the scheme is adopted, the anode area is not occupied, the opening area is not influenced, and the improvement of the luminous brightness is facilitated; a photoetching process is saved, the process is simpler, and the cost is lower; the anode structure is self-aligned, photoetching is not used, the difference among pixels caused by photoetching alignment deviation is avoided, and the uniformity among the pixels is better. The problem that the traditional pixel definition layer occupies a pixel area and influences the opening area to cause low brightness is solved; the process is complex and the cost is high; the misalignment causes a problem of poor uniformity among pixels. The display industry, especially the high resolution microdisplay industry.

The present invention has been described above with reference to the accompanying drawings, and it is obvious that the present invention is not limited by the above-mentioned manner, and various insubstantial improvements can be made without modification to the method and technical solution of the present invention, or the present invention can be directly applied to other occasions without modification, all within the scope of the present invention.

Claims (1)

1. A self-aligned pixel definition layer structure, comprising:

a substrate;

the anode is arranged on the substrate, and a gap is reserved between every two adjacent anodes;

a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel defining layer is flush with the side wall of the anode; the pixel defining layer is formed by dry etching.

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