CN112750750A - 升降机构 - Google Patents

升降机构 Download PDF

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CN112750750A
CN112750750A CN201911049589.3A CN201911049589A CN112750750A CN 112750750 A CN112750750 A CN 112750750A CN 201911049589 A CN201911049589 A CN 201911049589A CN 112750750 A CN112750750 A CN 112750750A
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spring
magnetic rod
accommodating cavity
coil
cavity
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CN112750750B (zh
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郑宇现
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Xia Tai Xin Semiconductor Qing Dao Ltd
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Xia Tai Xin Semiconductor Qing Dao Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0205—Magnetic circuits with PM in general
    • H01F7/0221—Mounting means for PM, supporting, coating, encapsulating PM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0231—Magnetic circuits with PM for power or force generation
    • H01F7/0236—Magnetic suspension or levitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
    • H01F7/16—Rectilinearly-movable armatures
    • H01F7/1607—Armatures entering the winding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
    • H01F7/128—Encapsulating, encasing or sealing
    • H01F7/129—Encapsulating, encasing or sealing of armatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

一种升降机构，其包括基体。基体具有承载面，所述基体中开设有贯穿所述承载面的容置腔体。所述升降机构还包括设置在容置腔体中的磁棒、弹簧、以及线圈。所述弹簧一端固定在所述磁棒远离所述承载面的一端，其另一端固定在容置腔体的腔壁上。线圈环绕所述磁棒，所述线圈通电时，由于电磁感应驱动所述磁棒移动从而使磁棒凸伸出所述容置腔体外或驱动所述磁棒移动压缩所述弹簧。所述升降机构结构简单且升降稳定性良好。

Description

升降机构
技术领域
本发明涉及一种升降机构，尤其是一种放置待加工产品并可对产品进行升降的升降机构。
背景技术
现有的半导体元件的制造过程中，例如以芯片为例，通常需要在单一晶片上形成数百个甚至上百万个的电子元件以及复杂精细的导电线路。随着芯片的小型化、集成化，对芯片的制造提出了更高的要求。芯片的加工过程中需要借助一定的承载基台或升降基台放置硅晶片以便更好的对硅晶片进行表面镀膜、蚀刻等工艺。
发明内容
鉴于此，有必要提供一种升降机构，其结构简单。
一种升降机构，其包括：
基体，其具有承载面，所述基体中开设有贯穿所述承载面的容置腔体；
磁棒，设置在所述容置腔体中；
弹簧，设置在所述容置腔体中，所述弹簧一端固定在所述磁棒远离所述承载面的一端，其另一端固定在容置腔体的腔壁上；以及
线圈，设置在所述容置腔体中且环绕所述磁棒，所述线圈通电时，由于电磁感应驱动所述磁棒移动从而使磁棒凸伸出所述容置腔体外或驱动所述磁棒移动压缩所述弹簧。
所述升降机构结构简单且升降稳定性良好。
附图说明
图1是本发明一实施方式的升降机构的剖面示意图。
图2A为升降机构的工作流程示意图一：等待产品到来的状态。
图2B为升降机构的工作流程示意图二：产品(硅晶片)达到升降机构上方。
图2C为升降机构的工作流程示意图三：磁棒移动并承载硅晶片。
图2D为升降机构的工作流程示意图四：硅晶片落在升降机构的承载面上以进行等离子蚀刻。
图2E为升降机构的工作流程示意图五：等离子蚀刻后硅晶片被磁棒顶起。
图2F为升降机构的工作流程示意图六：硅晶片被从升降机构上取走。
图2G为升降机构的工作流程示意图七：再次等待产品到来的状态。
图3为一实施例的磁棒的剖面示意图。
图4为机械手臂的俯视示意图。
主要元件符号说明
升降机构 100
基体 10
承载面 11
容置腔体 13
开口部 131
中腔 133
底腔 135
线圈 40
弹簧 30
第一端 31
第二端 33
磁棒 20
静电吸附卡盘 60
隔离件 50
通道 51
通孔 61
绝缘层 23
硅晶片 200
机械手臂 300
散热基体 80
具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
附图中示出了本发明的实施例，本发明可以通过多种不同形式实现，而并不应解释为仅局限于这里所阐述的实施例。相反，提供这些实施例是为了使本发明更为全面和完整的公开，并使本领域的技术人员更充分地了解本发明的范围。为了清晰可见，在图中，层和区域的尺寸被放大了。
除非另外定义，这里所使用的所有术语(包括技术和科学术语)具有与本发明所述领域的普通技术人员所通常理解的含义相同的含义。还应当理解，比如在通用的辞典中所定义的那些的术语，应解释为具有与它们在相关领域的环境中的含义相一致的含义，而不应以过度理想化或过度正式的含义来解释，除非在本文中明确地定义。
请参阅图1，本发明一实施方式的升降机构100，其包括基体10，基体10具有承载面11，所述基体10中开设有贯穿所述承载面11的容置腔体13。所述升降机构100还包括设置在所述容置腔体13中的磁棒20、弹簧30、以及线圈40。所述磁棒20呈棒状，其竖直设置在所述容置腔体13中。所述弹簧30具有相对的第一端31和第二端33，其中第一端31固定在所述磁棒20远离所述承载面11的一端，第二端33固定在容置腔体13的腔壁上。所述弹簧30可用以承载所述磁棒20。所述线圈40环绕所述磁棒20设置，所述线圈40连接有供电元件(图未示)以向线圈40通电。当线圈40通电时由于电磁感应将驱动所述磁棒20移动从而使磁棒20的至少一部分伸出至所述容置腔体13外或驱动所述磁棒20移动压缩所述弹簧30。
磁棒20可移动地设置在所述容置腔体13中且可在一回缩位置和一突伸位置之间移动。当所述磁棒20处于回缩位置时，所述磁棒20完全位于所述容置腔体13中且所述弹簧30被压缩；当所述磁棒20处于突伸位置时，所述磁棒20的至少一部分位于所述容置腔体13外且所述弹簧30被拉伸。
如图1所示，所述容置腔体13划分为三个部分，从上至下分别为开口部131、中腔133、底腔135，其中所述开口部131贯通承载面11并连通中腔133，所述中腔133位于开口部131与底腔135之间。所述磁棒20进行升降运动时可穿过开口部131从基体10伸出承载面11以上。所述开口部131和底腔135的口径小于中腔133。所述线圈40位于中腔133，所述弹簧30放置于底腔135且可被拉伸至中腔133。
所述基体10的承载面11用以放置待加工的产品(例如硅晶片，图1未示)，依靠所述磁棒20移动伸出所述容置腔体13外从而将产品顶起，依靠所述磁棒20退入所述容置腔体13中从而将产品放置在承载面11上。为了稳固的支持顶起的产品，磁棒20的数量以设置为两个及以上较佳，例如所述基体10可设置多个容置腔体13，每个容置腔体13中设置对应的一个磁棒20、一个弹簧30和一个线圈40。附图1中仅呈现一个磁棒20作为示例。或者，相对产品的表面积，单独一个磁棒20的横截面设计得足够大，能够稳定的支撑产品。当产品稳定地放置在承载面11上时，可对产品进行相应的加工，例如真空镀膜、等离子体蚀刻等。
当所述线圈40不通电时，所述弹簧30依靠弹簧30的弹力承载所述磁棒20，此时弹簧30的弹力等于磁棒20的重力。
所述线圈40通电时，可通过控制电流的走向，从而控制磁棒20的运动方向。一实施例中，所述线圈40被施加正向电压时，所述磁棒20将向上移动从而凸伸出所述容置腔体13外，此时弹簧30被拉伸，所述线圈40被施加负向电压时，所述磁棒20将向下移动从而退入容置腔体13中，此时弹簧30被压缩。另一实施例中，所述线圈40被施加负向电压，所述磁棒20向上移动从而凸伸出容置腔体13外，此时弹簧30被拉伸，所述线圈40被施加正向电压，所述磁棒20向下移动从而退入容置腔体13中，此时弹簧30被压缩。
所述弹簧30设置在磁棒20的一端，可支撑磁棒20，并且为磁棒20的向下(朝压缩弹簧30的方向)移动提供一定的位移空间；同时限制磁棒20向上(拉伸弹簧30的方向)的位移量。
一实施例中，所述线圈40不通电时，所述磁棒20全部位于容置腔体13中。因此，当所述磁棒20为伸出所述容置腔体13外将产品顶起的状态，由于发生故障所述线圈40由通电状态突然断电时，那么断电后所述磁棒20将下降全部位于容置腔体13中，从而使产品落在承载面11上。
本实施例中，所述升降机构100用于放置产品以对产品进行等离子体蚀刻，所述升降机构100会被放置在等离子体蚀刻的腔室中。由于等离子体的存在，需避免等离子体接触升降机构100中的部分元件以避免电弧的产生。在一实施例中，所述基体10的材质为金属或合金，例如金属铝、金属铜等。因此，如果基体10直接裸露在外面，则等离子体接触到裸露的金属材质的基体10会产生电弧。
为避免电弧的产生，如图1所示，所述升降机构100还包括覆盖所述承载面11的静电吸附卡盘60，以避免承载面11接触到等离子体；所述容置腔体13中设置有陶瓷材质的隔离件50以隔绝等离子体接触所述容置腔体13的腔壁。陶瓷和塑料均不会与等离子体产生反应，所述静电吸附卡盘60为陶瓷材质。
所述静电吸附卡盘60通过静电力吸附并固定产品。在半导体制造领域，对产品进行刻蚀处理的刻蚀机台或进行真空镀膜的镀膜机台上通常会设置有静电吸附卡盘60。
如图1所示，所述静电吸附卡盘60开设有与所述容置腔体13的开口部131对准连通的通孔61，所述静电吸附卡盘60用于放置待等离子体蚀刻的产品(例如硅晶片)。所述磁棒20可伸入或伸出所述通孔61。
如图1所示，所述隔离件50为中空的筒状，内部形成为通道51。所述隔离件50的外部轮廓与所述容置腔体13的形状相配合，所述隔离件50完全贴合所述开口部131和底腔135的腔壁，但不贴合所述中腔133的腔壁。因此，当等离子体进入到容置腔体13中，其只能进入到通道51内，只能接触到隔离件50的通道51的通道壁，而无法接触容置腔体13的腔壁，进而可有效隔绝等离子体接触所述基体10。所述隔离件50环绕所述磁棒20和所述弹簧30，且被所述线圈40围绕。所述磁棒20和所述弹簧30位于通道51中且所述磁棒20可在通道51内上下移动，线圈40可为缠绕在所述隔离件50上。所述弹簧30的一端是固定在隔离件50上，具体为固定在通道51的通道底壁511上。
所述磁棒20为磁铁材质。当升降机构100放置在等离子体的环境中，所述磁棒20外表面需全部包覆有绝缘层23以隔绝等离子体接触所述产生电弧反应，如图3所示。所述绝缘层23的材质可为陶瓷、石英、蓝宝石或塑料。另外，所述弹簧30的材质为绝缘材料，以避免与等离子体产生反应；例如该绝缘材料可为塑料。
如图1所示，所述升降机构100还包括结合在所述基体10的与承载面11相对一侧散热基体80。所述散热基体80用以传导并发散升降机构100产生的热量。
可以理解的，当所述升降机构100并非是设置在等离子体蚀刻的腔室中，则不需要要求静电吸附卡盘60为陶瓷材质且弹簧30为塑料材质，也不需要设置隔离件50以及包覆磁棒20的绝缘层23。
下面将介绍所述升降机构100的工作流程。
请参阅图2A所示，升降机构100为等待产品(硅晶片200)到来的状态，此时所述线圈40被施加负向电压，一实施例中负向电压为-24伏特，磁棒20移动压缩所述弹簧30并伸入容置腔体13中，所述磁棒20直至所述弹簧30被压缩到极限不能再移动。
请参阅图2B所示，保持所述线圈40被施加负向电压(-24伏特)，然后负载有硅晶片200的一机械手臂300移动到升降机构100的正上方。
请参阅图2C所示，所述线圈40由被施加负向电压切换为被施加正向电压，一实施例中正向电压为24伏特，所述磁棒20将移动伸出容置腔体13及通孔61外，并顶起所述硅晶片200，所述磁棒20直至弹簧30被拉伸到极限不能再移动。如图4所示，所述机械手臂300设置为U型的，其承载所述硅晶片200可供所述磁棒20移动穿过机械手臂300从而接住所述硅晶片200。所述磁棒20接住所述硅晶片200后，所述机械手臂300将从所述硅晶片200的一侧(左侧或右侧)移走不再位于升降机构100的正上方。
请参阅图2D所示，所述线圈40由被施加正向电压切换为被施加负向电压(-24伏特)，磁棒20移动压缩所述弹簧30并伸入容置腔体13中，磁棒20移动直至所述弹簧30被压缩到极限，此时所述硅晶片200落在所述静电吸附卡盘60上，然后可以对所述硅晶片200进行加工，例如等离子体蚀刻。
请参阅图2E所示，所述硅晶片200完成加工后，所述线圈40由被施加负向电压切换为被施加正向电压(24伏特)，所述磁棒20移动伸出容置腔体13及通孔61外以顶起所述硅晶片200，所述磁棒20移动直至所述弹簧30被拉伸到极限。
保持所述线圈40被施加正向电压(24伏特)，即保持所述所述磁棒20顶起所述硅晶片200，然后空置的机械手臂300从所述硅晶片200的一侧移动到升降机构100的正上方，磁棒20穿过U型的机械手臂300，此时所述硅晶片200仍由磁棒20承载。如图2F所示，然后线圈40由被施加正向电压切换为被施加负向电压(-24伏特)，磁棒20将移动压缩所述弹簧30并伸入容置腔体13中，所述硅晶片200将落在机械手臂300上并由机械手臂300承载。
请参阅图2G所示，保持所述线圈40被施加负向电压(-24伏特)，所述机械手臂300及其负载的加工好的硅晶片200将移走不再位于升降机构100的正上方，然后所述线圈40继续保持被施加负向电压，以等待负载有新的待加工的硅晶片200的机械手臂300的到来。
所述升降机构100通过线圈40、磁棒20之间的电磁感应驱动磁棒20移动从而顶起支撑产品，其结构简单、升降稳定性良好。
以上实施例仅用以说明本发明的技术方案而非限制，图示中出现的上、下、左及右方向仅为了方便理解，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或等同替换，而不脱离本发明技术方案的精神和范围。

Claims (10)

1.一种升降机构，其特征在于：其包括：
基体，其具有承载面，所述基体中开设有贯穿所述承载面的容置腔体；
磁棒，设置在所述容置腔体中；
弹簧，设置在所述容置腔体中，所述弹簧一端固定在所述磁棒远离所述承载面的一端，其另一端固定在容置腔体的腔壁上；以及
线圈，设置在所述容置腔体中且环绕所述磁棒，所述线圈通电时，由于电磁感应驱动所述磁棒移动从而使磁棒凸伸出所述容置腔体外或驱动所述磁棒移动压缩所述弹簧。
2.如权利要求1所述的升降机构，其特征在于：
所述线圈被施加正向电压时，所述磁棒移动拉伸弹簧从而凸伸出所述容置腔体外，所述线圈被施加负向电压时，所述磁棒移动压缩弹簧从而伸入容置腔体中；或者
所述线圈被施加负向电压时，所述磁棒移动拉伸弹簧从而凸伸出容置腔体外，所述线圈被施加正向电压时，所述磁棒移动压缩弹簧从而伸入容置腔体中。
3.如权利要求1所述的升降机构，其特征在于：所述升降机构用于放置在等离子体蚀刻的腔室中。
4.如权利要求3所述的升降机构，其特征在于：所述基体为金属材质。
5.如权利要求4所述的升降机构，其特征在于：所述升降机构还包括覆盖所述承载面的静电吸附卡盘，所述静电吸附卡盘开设有与所述容置腔体对准连通的通孔，所述静电吸附卡盘用于放置待加工的产品，所述静电吸附卡盘为陶瓷材质。
6.如权利要求4所述的升降机构，其特征在于：所述容置腔体中设置有陶瓷材质的隔离件，所述隔离件用以隔绝等离子体接触所述容置腔体的腔壁。
7.如权利要求6所述的升降机构，其特征在于：所述隔离件为中空的筒状，所述隔离件围绕所述磁棒和所述弹簧。
8.如权利要求7所述的升降机构，其特征在于：所述隔离件被所述线圈围绕。
9.如权利要求4所述的升降机构，其特征在于：所述磁棒的表面包覆有绝缘层以隔绝等离子体接触所述磁棒。
10.如权利要求4所述的升降机构，其特征在于：所述弹簧为绝缘材质以避免等离子体与所述弹簧反应。
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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103312A (ja) * 1982-12-04 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> アクチユエ−タ
US4749892A (en) * 1983-04-25 1988-06-07 Colt Industries Inc. Spring arrangement with additional mass for improvement of the dynamic behavior of electromagnetic systems
US4790258A (en) * 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
JPS6415906A (en) * 1987-07-10 1989-01-19 Mitsubishi Heavy Ind Ltd Electromagnetic actuator
CN1050463A (zh) * 1989-09-05 1991-04-03 张凡 磁保持式牵引电磁铁及其控制电路
JPH077072A (ja) * 1993-06-17 1995-01-10 Anelva Corp 静電チャック装置における基板の脱着方法および脱着機構
CN1123453A (zh) * 1994-11-19 1996-05-29 张凡 磁保持电磁铁及其制备方法
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US20050094118A1 (en) * 2003-09-26 2005-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100008009A1 (en) * 2007-03-27 2010-01-14 Scheider Elctric Industries Sas Bistable electromagnetic actuator, control circuit of an electromagnetic actuator with double coil and electromagnetic actuator with double coil comprising one such control circuit
KR20110075586A (ko) * 2009-12-28 2011-07-06 엘아이지에이디피 주식회사 리프트 핀 모듈

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103312A (ja) * 1982-12-04 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> アクチユエ−タ
US4749892A (en) * 1983-04-25 1988-06-07 Colt Industries Inc. Spring arrangement with additional mass for improvement of the dynamic behavior of electromagnetic systems
US4790258A (en) * 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
JPS6415906A (en) * 1987-07-10 1989-01-19 Mitsubishi Heavy Ind Ltd Electromagnetic actuator
CN1050463A (zh) * 1989-09-05 1991-04-03 张凡 磁保持式牵引电磁铁及其控制电路
JPH077072A (ja) * 1993-06-17 1995-01-10 Anelva Corp 静電チャック装置における基板の脱着方法および脱着機構
CN1123453A (zh) * 1994-11-19 1996-05-29 张凡 磁保持电磁铁及其制备方法
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US20050094118A1 (en) * 2003-09-26 2005-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100008009A1 (en) * 2007-03-27 2010-01-14 Scheider Elctric Industries Sas Bistable electromagnetic actuator, control circuit of an electromagnetic actuator with double coil and electromagnetic actuator with double coil comprising one such control circuit
KR20110075586A (ko) * 2009-12-28 2011-07-06 엘아이지에이디피 주식회사 리프트 핀 모듈

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