CN112750688A

CN112750688A - Wafer cleaning method

Info

Publication number: CN112750688A
Application number: CN202011632162.9A
Authority: CN
Inventors: 邓信甫; 吴海华; 刘大威; 陈丁堃
Original assignee: Zhiwei Semiconductor Shanghai Co Ltd
Current assignee: Zhiwei Semiconductor Shanghai Co Ltd
Priority date: 2020-12-31
Filing date: 2020-12-31
Publication date: 2021-05-04
Anticipated expiration: 2040-12-31
Also published as: CN112750688B

Abstract

The invention discloses a wafer cleaning method, which comprises the following steps: placing the wafer in the wafer cleaning equipment by using the wafer clamping device; adjusting the size of the cavity of each layer of drainage cavity in the composite cavity structure according to the current working mode to enable the wafer to correspond to one layer of drainage cavity; the wafer support structure rotates in the circumferential direction; spraying cleaning solution to the upper surface of the wafer by using a spray pipe, and spraying cleaning solution to the lower surface of the wafer by using a wafer supporting structure, wherein the cleaning solution on the upper surface and the lower surface of the wafer can diffuse from the periphery of the cleaning solution and flow into a current working drainage cavity and is discharged from the drainage cavity to the outside of the wafer cleaning equipment; and after the cleaning is finished, stopping spraying liquid by the spraying pipe and the wafer supporting structure, stopping rotating the wafer supporting structure, and transferring the wafer to the next procedure by the wafer clamping device. The invention can clean the upper surface and the lower surface of the wafer simultaneously, thereby not only improving the cleaning efficiency of the wafer, but also improving the cleaning effect and effectively ensuring the quality of the wafer.

Description

Wafer cleaning method

Technical Field

The invention relates to the technical field of semiconductor process equipment, in particular to a wafer cleaning method.

Background

Chemical cleaning is a method of removing impurities attached to the surface of an object using various chemical agents or organic solvents. In the field of semiconductor manufacturing, chemical cleaning refers to a process for removing various harmful impurities or oil stains adsorbed on the surfaces of objects such as semiconductors, metal materials, and tools.

Wafer cleaning is a process of removing contaminants from a whole batch or a single wafer by chemical cleaning, such as soaking or spraying chemicals, and is mainly used to remove contaminants on the wafer surface, such as particles (particles), organic substances (organic), inorganic substances, and metal ions (metal ions).

At present, chemical cleaning liquid is usually sprayed through a spray header on wet cleaning equipment to remove pollutants on the surface of a wafer, but at present, only one cleaning cavity is arranged in all the wet cleaning equipment, so that the same cleaning liquid is usually used in the cleaning cavity of one wet cleaning equipment, different types of chemical cleaning liquid cannot be cleaned in sections in the cleaning cavity of the same wet cleaning equipment, and the cleaning efficiency of single-piece cleaning equipment is very low. And, only be provided with the traditional shower that from last to bottom sprays the washing liquid on the wet cleaning equipment, this kind of traditional design can only wash the upper surface of wafer, and when wasing, under the effect of centrifugal force, the granule pollutant that washs is piled up in the wafer periphery easily, receiving the influence of wafer bottom flow field, and the granule pollutant that piles up in the wafer periphery can the adhesion at the back of wafer, and this kind of traditional wet cleaning equipment's clean ability is very poor, can't effectively guarantee the wafer quality.

Disclosure of Invention

Accordingly, the present invention is directed to a wafer cleaning method for solving the above-mentioned problems of the prior art.

A wafer cleaning method specifically comprises the following steps:

s1, placing the wafer in the wafer cleaning equipment by using the wafer clamping device;

the wafer cleaning equipment comprises an equipment shell, a composite cavity structure arranged in the equipment shell and a wafer supporting structure arranged in the composite cavity structure, wherein at least one spray pipe is arranged on the equipment shell, a plurality of layers of drainage cavities with adjustable cavity sizes are arranged in the composite cavity structure, and a wafer can be suspended above the wafer supporting structure;

s2, adjusting the size of the chamber of each layer of drainage cavity in the composite cavity structure according to the current working mode, so that the wafer corresponds to one layer of drainage cavity;

s3, the wafer supporting structure rotates in the circumferential direction, in the rotating process, a rotating airflow is formed on the lower surface of the wafer, and the rotating airflow circularly flows to clamp and take away partial pollutants on the lower surface of the wafer;

s4, spraying cleaning liquid to the upper surface of the wafer by using a spray pipe, and spraying cleaning liquid to the lower surface of the wafer by using a wafer supporting structure, wherein the cleaning liquid on the upper and lower surfaces of the wafer can diffuse from the periphery of the cleaning liquid and flow into a current working drainage cavity and is discharged from the drainage cavity to the outside of the wafer cleaning equipment;

and S5, after the cleaning is finished, stopping spraying liquid by the spray pipe and the wafer supporting structure, stopping rotating the wafer supporting structure, and transferring the wafer to the next procedure by the wafer clamping device.

Preferably, the composite chamber structure is separated from the wafer support structure by a splash guard, the upper portion of which is fixed with a spray ring.

Preferably, the composite cavity structure comprises a cavity housing;

a support ring which is attached to the inner side wall of the cavity shell and the upper end of which is fixed with the cavity shell through a snap ring;

a second isolation assembly disposed on the support collar;

and the first isolating component is crossed with the second isolating component so as to form a plurality of layers of drainage cavities between the first isolating component and the second isolating component, and the first isolating component is provided with a jacking element which can move up and down so as to change the cavity space size of each layer of drainage cavity.

Preferably, when the jacking element drives the first isolation assembly to move upwards, the chambers of the drainage cavities at the even layers formed by the first isolation assembly and the second isolation assembly in a crossed manner are gradually reduced, and the chambers of the drainage cavities at the odd layers are gradually increased;

when the jacking element drives the first isolation assembly to move downwards, the cavities of the even-layer drainage cavities formed by the first isolation assembly and the second isolation assembly in a crossed mode are gradually increased, and the cavities of the odd-layer drainage cavities are gradually reduced.

Preferably, the first isolation assembly comprises a first layer of isolation loops and a third layer of isolation loops, the second isolation assembly comprises a second layer of isolation loops and a fourth layer of isolation loops,

the first layer of isolation ring is buckled with the third layer of isolation ring;

the second layer of isolation ring is arranged between the first layer of isolation ring and the third layer of isolation ring, the bottom of the second layer of isolation ring is supported on the support ring, a first layer of drainage cavity is formed between the first layer of isolation ring and the second layer of isolation ring, and a second layer of drainage cavity is formed between the second layer of isolation ring and the third layer of isolation ring;

the third layer of isolation ring is arranged between the fourth layer of isolation ring and the support ring, and a third layer of drainage cavity is formed between the third layer of isolation ring and the fourth layer of isolation ring;

the fourth layer of isolation ring is fastened and fixed on the inner edge of the support ring, and a first drainage channel is arranged in the fourth layer of isolation ring.

Preferably, conduit grooves are formed in the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring, and are respectively connected with the nanometer small molecule water generator through water supply pipes.

Preferably, step S5 is followed by step S6: pure water is conveyed into each guide pipe groove and the spray ring through the water supply pipe by the nano micromolecule water generator so as to clean residual chemical cleaning liquid in the drainage cavity, and sewage mixed with residual cleaning liquid is discharged to the outside of the wafer cleaning equipment through each drainage cavity.

Preferably, the wafer supporting structure comprises a cleaning mechanism and a jacking rotating mechanism for driving the cleaning mechanism to move up and down and rotate in the circumferential direction,

the cleaning mechanism comprises a wafer positioning component sleeved on the jacking rotating mechanism and a pipe fitting shell buckled and fixed on the wafer positioning component, a wafer adsorption pipe and a cleaning liquid conveying pipe are arranged in the pipe fitting shell,

the wafer adsorption pipe vertically penetrates through the jacking rotating mechanism and is used for spraying air flow which enables the upper surface and the lower surface of the wafer to form pressure difference so as to enable the wafer to be suspended above the cleaning mechanism;

the cleaning liquid conveying pipe vertically penetrates through the jacking rotating mechanism and is communicated with an inclined nozzle arranged on the pipe fitting shell, and the cleaning liquid conveying pipe is used for conveying cleaning liquid for cleaning pollutants on the lower surface of the wafer.

Preferably, the pipe fitting shell comprises a pipe fitting lower shell, a pipe fitting upper shell buckled with the pipe fitting lower shell, and a fixing piece vertically penetrating through the pipe fitting upper shell, and the wafer adsorption pipe and the cleaning liquid conveying pipe are fixed in the fixing piece and vertically penetrate through the jacking and rotating mechanism.

Preferably, protective gas is introduced into a gap between the buckling parts of the upper shell and the lower shell of the pipe fitting through the gas jet pipe, so that the stability of a vacuum environment formed by the gas flow jetted by the wafer adsorption pipe on the lower surface of the wafer and the capability of the rotating gas flow for carrying particle pollutants are enhanced.

The invention has the beneficial effects that:

1. the method can simultaneously clean the upper surface and the lower surface of the wafer, thereby not only improving the cleaning efficiency of the wafer, but also improving the cleaning effect and effectively ensuring the quality of the wafer.

2. The cleaning cavity of the wet cleaning equipment adopted by the invention is set into the multilayer drainage cavity with the adjustable cavity size, so that the problem that different types of chemical cleaning liquids cannot be cleaned in the cleaning cavity of the same wet cleaning equipment in a segmented manner can be effectively solved, and the cleaning efficiency of the single-piece wet cleaning equipment is effectively improved.

3. The invention adopts a wet cleaning device, a special wafer supporting structure is arranged in a cavity of the wet cleaning device, the structure makes a wafer suspend above the wafer by using the Bernoulli principle, pollutants on the lower surface of the wafer can be thoroughly cleaned, and especially, a cleaning blind area on the lower surface of the wafer can be cleaned.

4. The method can effectively solve the problem that the particle pollutants cleaned from the surface of the wafer are accumulated on the periphery of the wafer and then adhered to the back of the wafer, can clean the surface and the back of the wafer simultaneously, can not cause the particle pollutants to be accumulated on the periphery of the wafer, greatly improves the cleaning capability of wet cleaning equipment, improves the cleaning efficiency and the cleaning effect, and effectively ensures the quality of the wafer.

5. Through set up wafer adsorption tube and washing liquid conveyer pipe in wafer bearing structure's pipe fitting shell, the partial pollutant of wafer lower surface can be taken away to the air current that can make the wafer suspension that the wafer adsorption tube erupted, and the washing liquid that the washing liquid conveyer pipe carried the slope nozzle can thoroughly wash the wafer lower surface, has not only improved the cleaning performance, has improved the cleaning efficiency, also can reduce the consumption of washing liquid, can reduce the manufacturing cost of enterprise.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a perspective view of a composite cavity structure.

Fig. 2 is a cross-sectional view of a composite cavity structure.

Fig. 3 is an enlarged view of a portion a in fig. 2.

Fig. 4 is a perspective view of the first layer of isolation loops.

Fig. 5 is a cross-sectional view of the first layer of isolation loops.

Fig. 6 is a perspective view of a second layer of isolation loops.

Fig. 7 is a cross-sectional view of a second layer of isolation loops.

Fig. 8 is a perspective view of the third layer of isolation loops.

Fig. 9 is a cross-sectional view of the third layer of isolation loops.

Fig. 10 is a perspective view of a fourth layer of isolation loops.

Fig. 11 is a cross-sectional view of a fourth layer of isolation loops.

FIG. 12 is a schematic view of cleaning a wafer with an alkaline cleaning solution.

FIG. 13 is a schematic view of a wafer being cleaned with an acidic cleaning solution.

Fig. 14 is a cross-sectional view of the wafer cleaning apparatus.

Fig. 15 is a schematic structural view of a wafer support structure.

FIG. 16 is a schematic view of the cleaning solution delivery pipe jetting the cleaning solution.

FIG. 17 is a schematic view of the rotating gas flow on the lower surface of the wafer entraining contamination.

Fig. 18 is a sectional view of the cleaning mechanism.

Fig. 19 is a cross-sectional view of a third wafer positioner.

Fig. 20 is a schematic view of the structure of the housing on the pipe.

Fig. 21 is a schematic view of the structure of the fixing member.

Figure 22 is a schematic view of the attachment of the splash shield to the spray ring.

Fig. 23 is a perspective view of the wafer cleaning apparatus.

FIG. 24 is a flow chart of the method of the present invention.

Fig. 25 is a top view of the wafer cleaning apparatus.

FIG. 26 is a perspective view of a nanoscale shower.

Figure 27 is a side view of a nanoscopic shower.

FIG. 28 is a schematic view of the inner tube of a nanospray tube.

FIG. 29 is a schematic view of a showerhead of a nano-scale shower.

FIG. 30 is a schematic illustration of a mist of cleaning fluid formed by a nanoscopic shower.

The reference numerals in the figures have the meaning:

1 is a cavity shell, 1-1 is a third drainage channel, and 1-2 is a second liquid discharge pipe;

2 is a supporting ring, 2-1 is a fifth ring body, 2-2 is a second clamping groove, 2-3 is a supporting convex ring, 2-4 is a flow guide hole, 2-5 is a first drainage hole, 2-6 is a supporting ring edge, and 2-7 is a second drainage hole;

3 is a first layer of isolation ring, 3-1 is a first ring body, 3-2 is a first isolation cover, 3-3 is a first ring edge, and 3-4 is a first clamping groove;

4 is a second layer of isolation ring, 4-1 is a second ring body, 4-2 is a second ring edge, and 4-3 is a notch;

5 is a third layer of isolation ring, 5-1 is a third ring body, 5-2 is a third isolation cover, 5-3 is a third ring edge, 5-4 is a bulge, and 5-5 is a connecting piece;

6 is a fourth layer of isolation ring, 6-1 is a fourth ring body, 6-2 is a slotted hole, 6-3 is an inner ring wall, 6-4 is a first outer ring wall, 6-5 is a second outer ring wall, 6-6 is a second drainage channel, 6-7 is a third drainage hole, 6-8 is a first drainage channel, and 6-9 is a first drainage pipe;

7 is a snap ring; 8 is a jacking element; 9 is a first layer of drainage cavity; 10 is a second layer of drainage cavity; 11 is a third layer of drainage cavity; 13 is a guide pipe groove; 14 is a spray plate, and 14-1 is a water spraying hole; 15 is a splash guard; 16 is a water supply pipe; 17 is a nanometer small molecule water generator; 18 is an equipment shell; 19 is a wafer;

20, 20-1, 20-2, 20-3, 20-4, 20-5, 20-6, 20-7, 20-8, 20-9, 20-10, 20-11, 20-12, 20-13, 20-14, 20-15, 20-16, 20-17, 20-15, 20-16, and 20-16, respectively;

21 is a jacking rotating mechanism, 21-1 is a motor, 21-2 is a lifting mechanism, 21-3 is a rotating shaft, and 21-4 is a rotating bearing; 22 is a contaminant;

23 is a spray pipe, 23-1 is a gas conveying pipeline, 23-2 is an atomization cleaning nozzle, 23-3 is a liquid cleaning nozzle, 23-4 is a nitrogen nozzle, 23-5 ultrasonic oscillation pieces, 23-6 linear rails, 23-7 lifting cylinders, 23-8 mounting plates, 23-9 is a rotary cylinder, 23-10 is a driving gear, 23-11 is a driven gear, 23-12 is a rack, 23-13 is an atomization cleaning pipeline, and 23-14 is a liquid cleaning pipeline;

24 is a splash guard; 25 is a spray ring, and 25-1 is an inclined spray head.

Detailed Description

For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.

It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The present application is described in further detail below with reference to specific embodiments and with reference to the attached drawings.

In the description of the present application, unless explicitly stated or limited otherwise, the terms "first", "second", and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless specified or indicated otherwise; the terms "connected" and "fixed" are used in a broad sense, for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description of the present application, it should be understood that the terms "upper", "lower", "left", "right", and the like used in the embodiments of the present application are described with reference to the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In addition, in this context, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on "or" under "the other element or be indirectly on" or "under" the other element via an intermediate element.

In a first embodiment, the present invention provides a wafer cleaning method, which utilizes a novel wafer cleaning apparatus to clean a wafer.

The wafer cleaning device includes a device housing 18, a composite chamber structure disposed within the device housing 18, and a wafer support structure disposed within the composite chamber structure.

The equipment shell 18 is provided with a fixed spray pipe and a plurality of spray pipes 23 which can swing back and forth and are used for spraying cleaning liquid or gas to the surface of the wafer, wherein the fixed spray pipe is arranged in a D area of the equipment shell 18, and other spray pipes which can swing back and forth are arranged in an A area and/or a B area and/or a C area of the equipment shell 18.

Specifically, each of the reciprocally swingable shower pipes 23 is connected to the apparatus casing through a driving mechanism, and is driven by the driving mechanism to perform up-and-down movement and rotational movement.

The driving mechanism comprises a lifting cylinder 23-7, a rotating cylinder 23-9, a mounting plate 23-8 and a linear track 23-6, wherein the fixed end of the lifting cylinder 23-7 is mounted on a base to provide a supporting point for the action of the lifting cylinder 23-7, the output end of the lifting cylinder 23-7 is connected with a lifting plate, and the lifting plate is slidably mounted on the linear track 23-6 and can move up and down along the linear track 23-6. The fixed section of the rotary cylinder 23-9 is arranged on the mounting plate 23-8, the output end of the rotary cylinder 23-9 is provided with a driving gear 23-10, the end part of the spray pipe is provided with a driven gear 23-11, and the driving gear 23-10 is meshed with the driven gear 23-11 through a rack 23-12. The lifting cylinder 23-7 acts to drive the mounting plate 23-8 to move up and down, so that the spraying pipe is driven to move up and down, and the output end of the rotating cylinder 23-9 drives the spraying pipe to rotate through the transmission of the gear rack 23-12, so that the spraying pipe is driven to swing back and forth.

In this embodiment, the spray pipes are provided with four kinds, including a fixed spray pipe arranged in the area D and three kinds of spray pipes which are arranged in the area A, B, C and can swing back and forth.

The spray pipe arranged in the area A is a nano-scale SC1 spray pipe arranged in an SC1 cleaning system, and the spray pipe comprises a liquid cleaning spray head, an atomization cleaning spray head, a nitrogen nozzle and an ultrasonic oscillation sheet. The nano SC1 spray pipe is L-shaped, the liquid cleaning spray head 23-3, the atomization cleaning spray head 23-2 and the nitrogen spray head are arranged at one end of the spray head, the liquid cleaning pipeline 23-14, the atomization cleaning pipeline 23-13 and the nitrogen supply pipeline 23-1 are arranged inside the spray head, one end of the liquid cleaning pipeline 23-14 is connected with the liquid cleaning spray head 23-3, and the other end is connected with an external liquid supply pipeline. One end of the atomization cleaning pipeline 23-13 is connected with the atomization cleaning nozzle 23-2, the other end of the atomization cleaning pipeline is connected with an external liquid supply pipeline, the atomization cleaning nozzle 23-2 is connected with the ultrasonic oscillation piece 23-5, the ultrasonic oscillation piece 23-5 is connected with an external power supply, atomization of cleaning liquid in the atomization cleaning nozzle 23-2 is achieved through the ultrasonic oscillation piece 23-5, small-particle atomized cleaning liquid is generated, and the nanometer wafer is effectively cleaned. One end of the nitrogen gas supply pipeline 23-1 is connected with a nitrogen gas nozzle 23-4, the other end of the nitrogen gas supply pipeline is connected with gas supply equipment, the nitrogen gas nozzle 23-4 faces to the position right below the atomization cleaning nozzle 23-2, the surface energy of liquid drops can be ensured through blowing of nitrogen gas, the liquid drop molecules are prevented from agglomerating to generate, and a nano-scale water film is formed on the surface of the atomized liquid drops.

In this embodiment, the liquid cleaning nozzle 23-3, the atomizing cleaning nozzle 23-2, and the nitrogen nozzle are distributed in a triangle, and the liquid cleaning nozzle 3 projects on the wafer toward the center of the triangle. The atomizing cleaning nozzle 23-2 is an umbrella-shaped nozzle, and the circle center of the atomizing cleaning nozzle 23-2 is superposed with the circle center of the wafer. The spray head arrangement adopting the structure is matched with the rotation of the wafer, a cleaning solution diffusion ring can be formed on the surface of the wafer, the spraying radius of the cleaning solution is increased, the cleaning effect of the wafer is improved, and the liquid sprayed by the liquid cleaning spray head 23-3 and the atomization cleaning spray head 23-2 is a mixed liquid of ammonia water and hydrogen peroxide.

The distance between the atomization cleaning nozzle 23-2 and the wafer is set to be 14-30 mm, and the distance between the nitrogen nozzle and the wafer and the distance between the liquid cleaning nozzle 23-3 and the wafer are both smaller than the distance between the atomization cleaning nozzle 23-2 and the wafer. In the embodiment, the distance between the atomizing cleaning nozzle 23-2 and the wafer is small, and the protection effect of nitrogen is combined, so that the atomized micromolecule cleaning liquid can be prevented from being mutually aggregated to form macromolecular liquid drops, and the cleaning effect of the wafer is ensured.

The spray pipe arranged in the area B is an SPM spray pipe and is used for spraying sulfuric acid or hydrogen peroxide.

The spray pipe arranged in the zone C is used for spraying ultrapure water, hydrofluoric acid or other special chemical solutions.

And the spray pipe arranged in the area D is used for spraying ultrapure water or nitrogen.

The showering pipes of the areas B, C and D are all traditional showering pipes, and their respective structures are not described in detail herein.

The wafer support structure is used to suspend the wafer 19 above it and spray a cleaning solution onto the backside of the wafer 19.

The composite cavity structure is internally provided with a plurality of layers of drainage cavities with adjustable cavity sizes, and is used for enabling the cleaning liquid on the surface and the back of the wafer 19 to flow to the outside of the equipment from the corresponding drainage cavities according to the type of the chemical cleaning liquid.

Specifically, the composite cavity structure comprises a cavity housing 1, a support ring 2, a first isolation component and a second isolation component.

The chamber housing 1 is arranged in a device housing 18 of the wet cleaning device. A third drainage channel 1-1 is arranged in the cavity shell 1.

The supporting ring 2 is arranged in the cavity housing 1 and is attached to the inner side wall of the cavity housing 1, and the upper end part of the supporting ring is fixed with the cavity housing 1 through a snap ring 7.

The second isolation assembly is disposed on the support collar 2.

The first isolation assembly and the second isolation assembly are crossed to form a plurality of layers of drainage cavities between the first isolation assembly and the second isolation assembly, and the first isolation assembly is provided with a jacking element 8 which can move up and down to change the space size of the cavity of each layer of drainage cavity.

When the jacking element 8 drives the first isolation assembly to move upwards, the chambers of the even-layer drainage cavities formed by the first isolation assembly and the second isolation assembly in a crossed mode are gradually reduced, and the chambers of the odd-layer drainage cavities are gradually increased.

When the jacking element 8 drives the first isolation assembly to move upwards, the chambers of the even-layer drainage cavities formed by the first isolation assembly and the second isolation assembly in a crossed mode are gradually increased, and the chambers of the odd-layer drainage cavities are gradually reduced.

The wafer supporting device is arranged in the composite cavity structure, the device can make the wafer 19 suspend above the device by using the Bernoulli principle, and can also be used for cleaning pollutants on the lower surface of the wafer 19, especially cleaning blind areas on the lower surface of the wafer.

The wafer supporting device comprises a cleaning mechanism 20 and a jacking rotating mechanism 21 which is used for driving the cleaning mechanism 20 to move up and down and rotate in the circumferential direction.

The cleaning mechanism 20 comprises a wafer positioning component sleeved on the jacking rotation mechanism 21 and a pipe fitting shell fastened and fixed on the wafer positioning component, and a wafer adsorption pipe 20-1 and a cleaning solution delivery pipe 20-2 are arranged in the pipe fitting shell.

The wafer adsorption pipe 20-1 vertically penetrates through the jacking rotary mechanism 21 and is used for spraying air flow which enables the pressure difference to be formed between the upper surface and the lower surface of the wafer 19 so as to enable the wafer 19 to be suspended above the cleaning mechanism 20;

the cleaning liquid delivery pipe 20-2 vertically penetrates through the jacking rotating mechanism 21 and is communicated with an inclined nozzle 20-17 arranged on the pipe fitting shell, and the cleaning liquid delivery pipe 20-2 is used for delivering cleaning liquid for cleaning pollutants on the lower surface of the wafer 19.

The composite cavity structure of the wafer cleaning equipment provided by the embodiment comprises a cavity shell 1, a support ring 2, a first isolation assembly and a second isolation assembly, wherein the first isolation assembly is provided with a jacking element 8.

Wherein the first isolation assembly comprises a first layer of isolation loops 3 and a third layer of isolation loops 5, and the second isolation assembly comprises a second layer of isolation loops 4 and a fourth layer of isolation loops 6.

The first-layer isolation ring 3 comprises a first ring body 3-1, a first isolation cover 3-2 which gradually inclines upwards from outside to inside extends from the inner wall of the first ring body 3-1, a first ring edge 3-3 horizontally extends from the outer wall of the first ring body 3-1 to the periphery, and a first clamping groove 3-4 is formed in the bottom of the first ring edge 3-3.

The second layer of isolation ring 4 comprises a second ring body 4-1, a second ring edge 4-2 horizontally extends outwards from the bottom of the second ring body 4-1, and a plurality of notches 4-3 which are uniformly distributed in the circumferential direction are formed in the joint of the second ring edge 4-2 and the second ring body 4-1.

The third layer of isolation ring 5 comprises a third ring body 5-1 and a third isolation cover 5-2 arranged at the inner side of the third ring body 5-1.

A third ring edge 5-3 fixedly connected with the jacking element 8 horizontally extends from the top of the third ring body 5-1 to the periphery, and a bulge 5-4 extends upwards from the third ring edge 5-3.

The bottom of the third ring body 5-1 is connected to the third cage 5-2 by a plurality of connectors 5-5.

The fourth layer isolation ring 6 includes a fourth ring body 6-1.

The fourth ring body 6-1 is provided with a plurality of slots 6-2 which are equidistantly distributed in the circumferential direction, and in the embodiment, the slots are arranged to be kidney-shaped holes.

An inner annular wall 6-3 which is gradually inclined downwards from inside to outside extends from the top of the outer wall of the fourth ring body 6-1, a first outer annular wall 6-4 extends from the bottom of the outer wall of the fourth ring body 6-1, the first outer annular wall 6-4 is bent upwards to form a second drainage channel 6-6, and a plurality of third drainage holes 6-7 used for discharging the cleaning liquid flowing into the channel into a third drainage channel 1-1 of the cavity shell are formed in the bottom of the second drainage channel 6-6. The bottom of the cavity shell 1 is provided with a second liquid discharge pipe 1-2, the second liquid discharge pipe 1-2 is communicated with a third drainage groove 1-1, and liquid in the third drainage groove 1-1 can be discharged to the outside of the device.

The middle part of the outer wall of the fourth ring body 6-1 extends to form a second outer ring wall 6-5 which is bent upwards, the second outer ring wall 6-5 is positioned between the inner ring wall 6-3 and the first outer ring wall 6-4, a first drainage channel 6-8 is formed between the second outer ring wall and the inner ring wall 6-3, the first drainage channel 6-8 is communicated with a first drainage pipe 6-9, and the first drainage pipe 6-9 is arranged at the bottom of the second outer ring wall 6-5 and penetrates through the first outer ring wall 6-4 and the cavity shell 1.

The support ring 2 comprises a fifth ring body 2-1.

The top of the fifth ring body 2-1 is provided with a second clamping groove 2-2 for buckling with the clamping ring 7.

A supporting convex ring 2-3 horizontally extends from the middle part of the inner wall of the fifth ring body 2-1, the bottom of the second layer of isolation ring 4 is arranged on the supporting convex ring 2-3, and a plurality of flow guide holes 2-4 uniformly distributed in the circumferential direction are arranged on the supporting convex ring 2-3.

The lower part of the fifth ring body 2 is provided with a plurality of first drainage holes 2-5 which are uniformly distributed in the circumferential direction and correspond to the flow guide holes 2-4 positioned above the fifth ring body.

A support ring edge 2-6 is horizontally extended inwards from the bottom of the fifth ring body 2, and a plurality of second drainage holes 2-7 are formed in the support ring edge 2-6.

When the composite cavity structure is assembled, firstly, the support ring 2 is placed in the cavity housing 1, the support ring 2 is attached to the inner side wall of the cavity housing 1, and the support ring 2 and the cavity housing 1 are fixed into a whole through the snap ring 7.

Then, the second layer of isolation ring 4 is arranged on the supporting convex ring 2-3 of the supporting ring, and the supporting convex ring 2-3 supports the second layer of isolation ring 4.

Then, a third layer of isolation ring 5 is arranged between a fourth layer of isolation ring 6 and the support ring 2, a third ring body 5-1 of the third layer of isolation ring 5 vertically penetrates through the support ring 2, a bulge 5-4 at the top of the third ring body 5-1 is clamped in a first clamping groove 3-4 of the first layer of isolation ring, so that the second layer of isolation ring 4 is arranged between the first layer of isolation ring 3 and the third layer of isolation ring 5, the upper end of the third layer of isolation ring 5 is buckled with the first layer of isolation ring 3, and the first layer of isolation ring 3 and the third layer of isolation ring 5 are fixed into a whole.

Form first layer drainage chamber 9 between first layer isolation ring 3 and the second layer isolation ring 4, form second layer drainage chamber 10 between second layer isolation ring 4 and the third layer isolation ring 5, form third layer drainage chamber 11 between third layer isolation ring 5 and the fourth layer isolation ring 6.

And then, fastening and fixing a fourth layer of isolation ring 6 on a support ring edge 2-6 of the support ring, wherein a first drainage channel 6-8 and a second drainage channel 6-6 are arranged inside the fourth layer of isolation ring 6, the first drainage channel 6-8 is positioned between the inner annular wall 6-3 and the second outer annular wall 6-5, and the second drainage channel 6-6 is formed by bending the first outer annular wall 6-4 upwards.

And finally, fixing the jacking element 8 and the third ring edge 5-3 of the third layer of isolation ring, so that when the jacking element 8 is started, the jacking element 8 can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move.

In this embodiment, the jacking element 8 is a cylinder, a piston rod of the cylinder is fixed to the third ring edge 5-3 of the third isolation ring, and a cylinder barrel of the cylinder can be mounted on an equipment shell of the wet cleaning equipment and can also be mounted in other places.

Specifically, when the piston rod of the cylinder pushes upwards to enable the first layer isolation ring 3 and the third layer isolation ring 5 to move upwards synchronously, the size of the cavity of the first layer drainage cavity 9 and the size of the cavity of the third layer drainage cavity 11 can be gradually increased, the size of the cavity of the second layer drainage cavity 10 can be gradually decreased, when the third isolation cover 5-2 of the third layer isolation ring 5 is attached to the upper portion of the second layer isolation ring 4, the second layer drainage cavity 10 is hidden and disappears, and the cavity of the first layer drainage cavity 9 and the third layer drainage cavity 11 reaches the maximum state.

When the piston rod of the cylinder drives the first layer isolation ring 3 and the third layer isolation ring 5 to synchronously move downwards, the sizes of the chambers of the first layer drainage chamber 9 and the third layer drainage chamber 11 can be gradually reduced, the size of the chamber of the second layer drainage chamber 10 can be gradually increased, when the first isolation cover 3-2 of the first layer isolation ring 3 is attached to the upper part of the second layer isolation ring 4, and the third isolation cover 5-2 of the third layer isolation ring is attached to the second outer ring wall 6-5 of the fourth layer isolation ring, the chamber of the second layer drainage chamber 10 reaches the maximum state, and the chambers of the first layer drainage chamber 9 and the third layer drainage chamber 11 are hidden.

The cleaning cavity of the wafer cleaning equipment is set into the multilayer drainage cavity with the adjustable cavity size, so that the problem that different types of chemical cleaning liquids cannot be cleaned in the cleaning cavity of the same wet cleaning equipment in a segmented mode can be effectively solved, and the cleaning efficiency of the single-piece wet cleaning equipment is effectively improved.

The following describes the operation of the composite cavity structure by way of example:

when the wafer is required to be cleaned by alkaline chemical cleaning solution, the cylinder can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move downwards until the chambers of the first layer of drainage cavity 9 and the third layer of drainage cavity 11 are hidden and the chamber of the second layer of drainage cavity 10 reaches the maximum state, as shown in fig. 14, then the wafer height is adjusted by using a wafer supporting device of wet cleaning equipment, so that the wafer 19 is flush with the upper edge of the third isolation cover 5-2 or slightly higher than the upper edge of the third isolation cover 5-2, then the alkaline chemical cleaning solution is sprayed to the upper surface of the wafer from top to bottom by using a spray pipe on the wet cleaning equipment, flows into the second layer of drainage cavity 10 from the periphery of the wafer 19, then flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage hole 2-5 of the supporting ring, and finally, the wastewater is discharged to the outside of the equipment through a second liquid discharge pipe 1-2.

When the wafer needs to be cleaned by the acidic chemical cleaning solution, the cylinder can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to move upwards synchronously, as shown in fig. 15, then the wafer height is adjusted by using the wafer supporting device of the wet cleaning equipment, so that the wafer 19 is flush with or slightly higher than the upper edge of the inner ring wall 6-3 of the fourth layer of isolation ring, then the acidic chemical cleaning solution is sprayed to the upper surface of the wafer 19 from top to bottom by using the spray pipe on the wet cleaning equipment, flows into the first flow guide channel 6-8 from the periphery of the wafer 19, and is discharged to the outside of the equipment through the first liquid discharge pipe 6-9.

The wafer support structure of the wafer cleaning apparatus provided in this embodiment is disposed in the composite chamber structure.

The wafer support structure includes a cleaning mechanism 20 and a lifting and rotating mechanism 21. The wafer supporting structure and the composite cavity structure are separated by a splash guard 24, specifically, the splash guard 24 is sleeved outside the jacking rotation mechanism 21, and in this embodiment, the splash guard 24 is clamped on the upper portion of the lifting mechanism 21-2. The splash guard 24 is provided with a plurality of waist-shaped holes which are uniformly distributed in the circumferential direction. The lower edge of the splash guard 24 is downwards inclined and slightly extends into the third drainage channel 1-1, a spray ring 25 is fixed on the upper portion of the splash guard 24, a plurality of inclined spray heads 25-1 which are uniformly distributed in the circumferential direction are installed at the top of the spray ring 25, the spray ring 25 is connected with a nanometer small molecular water generator through a water supply pipe, clear water can be conveyed into the spray ring 25 through the nanometer small molecular water generator, and water is sprayed into the composite cavity structure through the inclined spray heads 25-1 on the spray ring 25 so as to clean chemical cleaning liquid remained in the composite cavity structure.

The lifting and rotating mechanism 21 can drive the cleaning mechanism 20 to move up and down and can rotate the cleaning mechanism 20 in the circumferential direction.

The jacking and rotating mechanism 21 comprises a motor 21-1 and a lifting mechanism 21-2, the motor 21-1 is fixed on the lifting mechanism 21-2, and the cleaning mechanism 20 is sleeved on a rotating shaft assembly (the rotating shaft assembly comprises a rotating shaft 21-3 and a rotating bearing 21-4) of the motor 21-1. The lifting mechanism 21-2 is used for driving the motor and the cleaning mechanism 20 fixed on the motor 21-1 to move up and down, and the motor 21-1 can drive the cleaning mechanism 20 to rotate in the circumferential direction. In this embodiment, the motor 21-1 is a hollow servo motor.

The cleaning mechanism 20 comprises a wafer positioning component and a pipe shell fastened and fixed on the wafer positioning component, a wafer adsorption tube 20-1 and a cleaning solution delivery tube 20-2 are arranged in the pipe shell, the wafer adsorption tube 20-1 is used for spraying air flow which enables the upper surface and the lower surface of the wafer 19 to form pressure difference, so that the wafer 19 is suspended above the cleaning mechanism 20, and the cleaning solution delivery tube 20-2 is used for delivering cleaning solution for cleaning pollutants 22 on the lower surface of the wafer 19.

The wafer positioning assembly includes a first wafer positioner 20-3, a second wafer positioner 20-4, and a third wafer positioner 20-5.

The first wafer positioner 20-3 and the second wafer positioner 20-4 are both sleeved on the jacking rotary mechanism 21. Specifically, the first wafer positioner 20-3 is sleeved on a rotating shaft of the motor 21-1, the rotating bearing 21-4 is sleeved at the end of the rotating shaft 21-3 of the motor 21-1, and the second wafer positioner 20-4 is sleeved on the rotating bearing 21-4. The third wafer positioner 20-5 is respectively fastened and fixed with the first wafer positioner 20-3 and the second wafer positioner 20-4, and a plurality of supporting seats 20-6 are installed at the top of the third wafer positioner 20-5.

The bottom of the third wafer positioner 20-5 is provided with a third fixing groove 20-9 for fastening the second wafer positioner 20-3, and the bottom thereof extends downwards to form an annular protrusion 20-11, when the first wafer positioner 20-3 is sleeved on the rotating shaft 21-3 of the motor, the side edge of the first wafer positioner 20-3 is just abutted against the annular protrusion 20-11.

The top of the third circular positioner 20-5 is opened with a plurality of first fixing grooves 20-7 for mounting the supporting seat 20-6 and second fixing grooves 20-8 for fastening the pipe casing.

The pipe fitting shell comprises a pipe fitting lower shell 20-12, a pipe fitting upper shell 20-13 buckled with the pipe fitting lower shell 20-12, and a fixing piece 20-14 vertically penetrating the pipe fitting upper shell 20-13.

The pipe lower case 20-12 is caught in the second fixing groove 20-8 of the third wafer positioner 20-5.

A fourth fixing groove 20-10 which vertically penetrates is formed in the center of the outer shell 20-13 on the pipe fitting, and a fixing piece 20-14 is arranged in the fourth fixing groove 20-10. The lower part of the upper shell 20-13 of the pipe fitting is provided with a buckling groove 20-15, and the lower shell 20-12 of the pipe fitting is buckled with the upper shell 20-13 of the pipe fitting through the buckling groove 20-15. When the upper pipe shell 20-13 is fastened to the lower pipe shell 20-12, a small gap 20-16 exists between the fastening portion of the upper pipe shell 20-13 and the lower pipe shell 20-12.

The upper part of the pipe upper shell 20-13 is horizontally provided with a plurality of inclined nozzles 20-17. In this embodiment, the outer surface of the upper portion of the outer shell 20-13 on the pipe is a downwardly inclined arc surface.

The center of the fixing member 20-14 is provided with a fifth fixing groove 20-15 which vertically penetrates through the fixing member, the wafer adsorption tube 20-1 is inserted into the fifth fixing groove 20-15, and the lower end of the wafer adsorption tube vertically penetrates through the whole jacking rotary mechanism 21 to be connected with air supply equipment outside the equipment.

A plurality of sixth fixing grooves 20-16 are formed in the periphery of the fifth fixing groove 20-15, the plurality of sixth fixing grooves 20-16 are evenly distributed around the fifth fixing groove 20-15, a cleaning solution delivery pipe 20-2 is inserted into each sixth fixing groove 20-16, the number of the cleaning solution delivery pipes 20-2 is equal to the number of the inclined nozzles 20-17 in the shell 20-13 on the pipe fitting, and namely one cleaning solution delivery pipe 20-2 corresponds to only one inclined nozzle 20-17. The cleaning solution delivery pipe 20-2 at different positions can be used to deliver cleaning solutions of different concentrations or different kinds, such as acidic cleaning solutions or alkaline cleaning solutions. In this embodiment, the sixth fixing groove 20-16 is an L-shaped groove, so that when the cleaning solution delivery pipe 20-2 is inserted into the sixth fixing groove 20-16, the cleaning solution delivery pipe 20-2 is also L-shaped, a horizontal section of the L-shaped cleaning solution delivery pipe 20-2 is communicated with the inclined nozzle 20-17 inside the upper shell 20-13 of the pipe fitting, and a vertical section of the L-shaped cleaning solution delivery pipe 20-2 passes through the whole jacking and rotating mechanism 21 to be connected with a liquid supply system in the semiconductor wet process.

The working principle of the wafer support structure is as follows:

the gas is supplied into the wafer adsorption tube 20-1 by the gas supply device. Since the air flow for forming a pressure difference between the upper surface and the lower surface of the wafer 19 is ejected in the wafer adsorption tube 20-1, when the wafer 19 is placed on the wafer support structure, the wafer 19 floats/floats on the plurality of supports 20-6, and the wafer 19 does not contact the supports 20-6.

The motor 21-1 of the lifting and rotating mechanism can drive the whole cleaning mechanism 20 to rotate in the circumferential direction, and during the rotation of the cleaning mechanism 20, a rotating airflow is formed on the lower surface of the wafer 19, and the rotating circulation of the airflow can carry away part of pollutants on the lower surface of the wafer 19.

In order to enhance the stability of the vacuum environment formed by the airflow ejected from the wafer adsorption tube 20-1 on the lower surface of the wafer and enhance the capability of the airflow to entrain pollutants, a gas jet tube may be disposed in the hollow chamber of the motor 21-1, and the gas ejected from the gas jet tube will not damage the bernoulli principle. When the gas jet pipe is installed, the gas jet pipe penetrates through the hollow of the motor 21-1 and is communicated with the gap 20-16 between the buckling parts of the pipe upper shell 20-13 and the pipe lower shell 20-12, the gas flow jetted by the gas jet pipe can flow out from the gap between the upper end surface of the pipe lower shell 20-12 and the pipe lower shell 20-13 along the gap 20-16 and the buckling grooves 20-15, so that the stability of a vacuum environment and the capability of carrying particles by the gas flow are enhanced, the flow path of the gas flow jetted by the gas jet pipe is shown in fig. 20, and the gas jet pipe is not shown in fig. 20. In this embodiment, nitrogen gas is injected from the gas injection pipe.

An acid or alkaline cleaning solution can be conveyed into the cleaning solution conveying pipe 20-2 through a liquid supply system in the semiconductor wet process, and the cleaning solution is conveyed into the inclined nozzle 20-17 through the cleaning solution conveying pipe 20-2 and is sprayed out from a nozzle opening of the inclined nozzle 20-17. Because the whole cleaning mechanism 20 rotates in the circumferential direction, when the cleaning liquid is sprayed out from the inclined nozzles 20-17, a CDA jet flow is formed, the cleaning liquid can clean the residual pollutants on the lower surface of the wafer 19 under the action of centrifugal force, and the cleaning liquid mixed with the pollutants flows into the corresponding drainage cavity of the composite cavity structure of the single-wafer wet cleaning equipment and is discharged to the outside from the corresponding liquid discharge pipe of the single-wafer wet cleaning equipment.

Meanwhile, after the cleaning operation is finished, the cleaning liquid remained on the lower surface of the wafer 19 can be blown off from the wafer by the air flow jetted from the wafer adsorption tube 20-1 and the gas jet tube.

The wafer supporting structure of the single wafer type wet cleaning device provided by the embodiment can thoroughly clean the contaminants on the lower surface of the wafer 19 by suspending the wafer 19 above the device by using the bernoulli principle, and especially can clean the dead zone of the lower surface of the wafer 19.

By arranging the wafer adsorption pipe 20-1 and the cleaning liquid conveying pipe 20-2 in the pipe shell, partial pollutants on the lower surface of the wafer 19 can be carried away by the airflow which is sprayed by the wafer adsorption pipe 20-1 and can suspend the wafer 19, and the cleaning liquid which is conveyed to the inclined nozzle 20-17 by the cleaning liquid conveying pipe 20-2 can thoroughly clean the lower surface of the wafer 19, so that the cleaning effect is improved, the cleaning efficiency is improved, the consumption of the cleaning liquid can be reduced, and the production cost of enterprises can be reduced.

At present, the wet cleaning equipment is only provided with the spray pipe 23 which sprays cleaning liquid from top to bottom, the traditional design can only clean the upper surface of the wafer 19, and in the cleaning process, the cleaned particle pollutants are easy to accumulate at the periphery of the wafer 19 under the action of centrifugal force, and the particle pollutants accumulated at the periphery of the wafer 19 can be adhered to the back of the wafer 19 under the influence of a flow field at the bottom of the wafer 19. This application can carry out abluent wafer bearing structure to the wafer lower surface through the installation on wet cleaning equipment, can effectively solve this problem, in the single cleaning operation in-process, the wet cleaning equipment who installs this application device can not only wash the surface and the back of wafer 19 simultaneously, can not cause the problem that particle pollutant piles up in wafer 19 periphery yet, improved wet cleaning equipment's clean ability greatly, cleaning efficiency and cleaning performance have been improved, the wafer quality has been guaranteed effectively.

The wafer cleaning method specifically comprises the following steps:

and S1, placing the wafer in the wafer cleaning equipment by using the wafer clamping device.

When the wafer clamping device clamps a wafer, air is firstly supplied into the wafer adsorption tube 20-1 of the wafer support structure through the air supply device. Thus, when the wafer is placed in the wafer cleaning apparatus, the air flow ejected from the wafer suction pipe 20-1 to form a pressure difference between the upper surface and the lower surface of the wafer 19 enables the wafer 19 to float/float above the support base 20-6, and the wafer 19 does not contact the support base 20-6.

And S2, adjusting the size of the chamber of each layer of drainage cavity in the composite cavity structure according to the current working mode, so that the wafer corresponds to one layer of drainage cavity.

Taking the example of cleaning the wafer with the alkaline chemical cleaning solution, the jacking element should drive the first isolation assembly to move downward to maximize the chamber of the second layer of drainage cavity 10, and if the wafer 19 is not flush with the upper edge of the third isolation cover 5-2 or is not slightly higher than the upper edge of the third isolation cover 5-2, the height of the wafer is slightly adjusted by the lifting mechanism of the jacking rotation mechanism.

S3, the motor 21-1 of the lifting and rotating mechanism drives the whole cleaning mechanism 20 to rotate in the circumferential direction, and during the rotation of the cleaning mechanism 20, a rotating airflow is formed on the lower surface of the wafer 19, and the rotating circulation of the airflow can entrain part of the contaminants on the lower surface of the wafer 1.

Meanwhile, nitrogen can be introduced into a gap 20-16 between the buckling parts of the upper pipe shell 20-13 and the lower pipe shell 20-12 through the gas jet pipe, and flows out from the gap between the upper end face of the lower pipe shell 20-12 and the lower pipe shell 20-13, so that the stability of a vacuum environment formed by the airflow jetted from the wafer adsorption pipe 20-1 on the lower surface of the wafer and the capability of the airflow carrying particle pollutants can be enhanced. The nitrogen sprayed by the gas jet pipe and the gas sprayed by the wafer adsorption pipe 20-1 can enter the current working drainage cavity, namely the second layer of drainage cavity 10.

And S4, spraying chemical cleaning liquid to the upper surface of the wafer by using the spray pipe, wherein the chemical cleaning liquid can diffuse from the periphery of the chemical cleaning liquid and flow into the current working drainage cavity (namely the second-layer drainage cavity). Specifically, according to the current working mode, the spray pipes in the area A, the area B, the area C or the area D can be adopted to spray cleaning liquid on the upper surface of the wafer, or a plurality of spray pipes can be adopted to alternatively spray. Under different working modes, the spraying operation modes of the plurality of spraying pipes are different, and detailed description is omitted here.

Since the whole cleaning mechanism 20 rotates in the circumferential direction, when the cleaning liquid is sprayed out from the inclined nozzle 20-17 of the cleaning liquid delivery pipe 20-2, a CDA jet is formed, the cleaning liquid can clean the residual contaminants on the lower surface of the wafer 19 under the action of centrifugal force, and the cleaning liquid with the contaminants flows into the second-layer drainage chamber 10.

The alkaline chemical cleaning solution entering the second layer of drainage cavity 10 flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage holes 2-5 of the support ring, and is finally discharged to the outside of the equipment through the second liquid discharge pipe 1-2.

And S5, after the cleaning is finished, stopping spraying liquid by the spray pipe and the wafer supporting structure.

The residual cleaning liquid on the lower surface of the wafer 19 can be blown off from the wafer by the air flow jetted from the wafer suction pipe 2-1 and the gas jet pipe. The residual cleaning solution separated from the wafer can also flow into the third drainage channel 1-1 of the cavity shell from the second layer of drainage cavity 10 and the first drainage hole 2-5 of the support ring, and finally is discharged to the outside of the equipment through the second liquid discharge pipe 1-2.

When no cleaning solution is left on the wafer, the wafer supporting structure stops rotating, and the wafer is transferred to the next procedure through the wafer clamping device, so that the cleaning of one wafer is completed.

In the second embodiment, the structure of the wafer cleaning apparatus in this embodiment is substantially the same as that of the first embodiment, and specifically, a conduit groove 13 is further formed inside the second layer of isolation ring 4, the third layer of isolation ring 5, and the fourth layer of isolation ring 6 of the composite chamber structure of the wafer cleaning apparatus in this embodiment.

The catheter groove on the second layer of isolation ring 4 is communicated with the first layer of drainage cavity 9, the catheter groove on the third layer of isolation ring 5 is communicated with the second layer of drainage cavity 10, and the catheter groove on the fourth layer of isolation ring 6 is communicated with the third layer of drainage cavity 11.

The conduit groove on the second layer of isolation ring 4 is disposed within its second ring body 4-1.

The conduit groove on the third layer of isolation ring 5 is arranged in the third isolation cover 5-2 thereof.

The duct channels in the fourth layer of isolating collar 6 are provided in its inner annular wall 6-3 and second outer annular wall 6-5, respectively.

The conduit grooves in the second layer of isolation ring 4, the third layer of isolation ring 5 and the fourth layer of isolation ring 6 are all connected with a nanometer small molecule water generator 17 through a water supply pipe 16. The nano small molecule water generator 17 is used for filtering water, and sending the filtered water to a corresponding catheter groove through a water supply pipe 16 to clean chemical cleaning liquid remained in each drainage cavity.

Preferably, the upper surfaces of the second layer of isolation ring 4, the third layer of isolation ring 5 and the fourth layer of isolation ring 6 are further provided with a spray plate 14 covering the conduit groove, and the spray plate 14 is provided with a plurality of water spray holes 14-1 arranged in an array.

After the wafer cleaning operation is finished, filtered water can be sent to the conduit groove 13 and the spray ring 25 of each layer of isolation ring through the water supply pipe 16 by the nano small molecule water generator 17, and then the water is sprayed into each drainage cavity through the spray plate on the surface of the conduit groove 13 and the inclined spray head 25-1 on the surface of the spray ring 25 to clean the residual cleaning liquid in each drainage cavity, as shown in fig. 3 and 16.

Specifically, the water delivered to the conduit grooves of the second layer of isolation ring 4 is sprayed to the lower surface of the first layer of isolation ring 3 through the spraying plate on the surface of the first layer of isolation ring, and the sewage mixed with the residual cleaning solution enters the first layer of drainage cavity 9 and then flows into the third drainage channel 1-1 of the cavity shell through the first layer of drainage cavity 9, the flow guide holes 2-4 of the support ring and the first drainage holes 2-5.

The water conveyed to the conduit groove of the third layer of isolation ring 5 is sprayed to the lower surface of the second layer of isolation ring 4 through the spraying plate on the surface of the conduit groove, the sewage mixed with the residual cleaning solution enters the second layer of drainage cavity 10 and then flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage holes 2-5 of the supporting ring.

The water conveyed to the conduit groove in the second outer annular wall 6-5 of the fourth layer of isolation ring 6 is sprayed to the lower surface of the third layer of isolation ring 5 through the spraying plate on the surface of the water, the sewage mixed with residual cleaning solution enters the third layer of drainage cavity 11, and then flows into the third drainage channel 1-1 of the cavity shell through the third layer of drainage cavity 11, the first drainage holes 2-5 of the supporting ring, the second drainage channel 6-6 and the third drainage holes 6-7 at the bottom of the second drainage channel 6-6.

The sewage flowing into the third drainage channel 1-1 is discharged to the outside of the equipment through the second sewage discharge pipe 1-2.

The water delivered to the conduit groove in the inner annular wall 6-3 of the fourth layer of isolation ring 6 is sprayed to the lower surface of the second outer annular wall 6-5 through the spraying plate on the surface of the water, and the sewage mixed with residual cleaning solution enters the first drainage channel 6-8 and is discharged to the outside of the equipment through the first drainage pipe 6-9.

The water conveyed into the spray ring 25 can be sprayed into a gap between the splash guard and the composite cavity structure so as to clean chemical liquid remained on the cleaning blind areas of the isolation rings of all layers.

In this embodiment, other specific embodiments are the same as the first embodiment, and are not described herein again in detail.

In a third embodiment, the composite chamber structure of the wafer cleaning apparatus in this embodiment is substantially the same as that in the first or second embodiment, and specifically, the difference is that the lower surfaces of the first layer of isolation ring 3, the second layer of isolation ring 4, the third layer of isolation ring 5, and the fourth layer of isolation ring 6 are further respectively provided with a sputtering-proof plate 15.

In this embodiment, other specific embodiments are the same as the first embodiment or the second embodiment, and are not described herein again in detail.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims

1. A wafer cleaning method is characterized by comprising the following steps:

the wafer cleaning equipment comprises an equipment shell, a composite cavity structure arranged in the equipment shell and a wafer supporting structure arranged in the composite cavity structure, wherein at least one type of spray pipe is arranged on the equipment shell, a plurality of layers of drainage cavities with adjustable cavity sizes are arranged in the composite cavity structure, and a wafer can be suspended above the wafer supporting structure;

2. The method of claim 1, wherein the composite chamber structure is separated from the wafer support structure by a splash shield, and a spray ring is secured to an upper portion of the splash shield.

3. The wafer cleaning method as claimed in claim 1 or 2, wherein the composite chamber structure comprises a chamber housing;

a second isolation assembly disposed on the support collar;

4. The wafer cleaning method as claimed in claim 3, wherein when the jacking element drives the first isolation assembly to move upwards, the chambers of even-numbered drainage cavities formed by the intersection of the first isolation assembly and the second isolation assembly are gradually reduced, and the chambers of odd-numbered drainage cavities are gradually increased;

5. A method for cleaning a wafer as recited in claim 3, wherein the first isolation assembly includes a first layer of isolation rings and a third layer of isolation rings, the second isolation assembly includes a second layer of isolation rings and a fourth layer of isolation rings,

6. The wafer cleaning method as claimed in claim 5, wherein conduit grooves are formed in the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring, and each conduit groove is connected with a nanometer small molecule water generator through a water supply pipe.

7. The method as claimed in claim 6, wherein the step S5 is followed by the step S6: pure water is conveyed into each guide pipe groove and the spray ring through the water supply pipe by the nano micromolecule water generator so as to clean residual cleaning liquid in the drainage cavity, and sewage mixed with the residual cleaning liquid is discharged to the outside of the wafer cleaning equipment through each drainage cavity.

8. The wafer cleaning method as claimed in claim 1 or 2, wherein the wafer supporting structure comprises a cleaning mechanism and a lifting and rotating mechanism for driving the cleaning mechanism to move up and down and rotate in a circumferential direction,

9. The wafer cleaning method as claimed in claim 7, wherein the tube housing comprises a lower tube housing, an upper tube housing engaged with the lower tube housing, and a fixing member vertically penetrating the upper tube housing, and the wafer suction tube and the cleaning solution delivery tube are fixed in the fixing member and vertically penetrate the lifting and rotating mechanism.

10. The method as claimed in claim 9, wherein the gas injection tube is used to introduce a shielding gas into the gap between the fastening portions of the upper and lower tube housings, so as to enhance the stability of the vacuum environment formed by the gas flow injected from the wafer adsorption tube on the lower surface of the wafer and the ability of the rotating gas flow to carry particulate contaminants.