CN214672515U

CN214672515U - Composite cavity structure for wafer cleaning equipment

Info

Publication number: CN214672515U
Application number: CN202023321922.2U
Authority: CN
Inventors: 廖世保; 邓信甫; 刘大威; 陈丁堃
Original assignee: Jiangsu Qiwei Semiconductor Equipment Co ltd; Zhiwei Semiconductor Shanghai Co Ltd
Current assignee: Jiangsu Qiwei Semiconductor Equipment Co ltd; Zhiwei Semiconductor Shanghai Co Ltd
Priority date: 2020-12-31
Filing date: 2020-12-31
Publication date: 2021-11-09
Anticipated expiration: 2030-12-31

Abstract

The utility model discloses a composite cavity structure for wafer cleaning equipment, which comprises a cavity shell; a support ring which is attached to the inner side wall of the cavity shell and the upper end of which is fixed with the cavity shell through a snap ring; a second isolation assembly disposed on the support collar; and the first isolating component is crossed with the second isolating component so as to form a plurality of layers of drainage cavities between the first isolating component and the second isolating component, and the first isolating component is provided with a jacking element which can move up and down so as to change the cavity space size of each layer of drainage cavity. The utility model discloses can solve the unable abluent problem of washing intracavity segmentation of the chemical cleaning liquid of different grade type effectively at same wafer cleaning equipment, improve monolithic formula wafer cleaning equipment's cleaning efficiency effectively.

Description

Composite cavity structure for wafer cleaning equipment

Technical Field

The utility model relates to a semiconductor process equipment technical field especially relates to a compound cavity structure for wafer cleaning equipment.

Background

Chemical cleaning is a method of removing impurities attached to the surface of an object using various chemical agents or organic solvents. In the field of semiconductor manufacturing, chemical cleaning refers to a process for removing various harmful impurities or oil stains adsorbed on the surfaces of objects such as semiconductors, metal materials, and tools.

Wafer cleaning is a process of removing contaminants from a whole batch or a single wafer by chemical cleaning, such as soaking or spraying chemicals, and is mainly used to remove contaminants on the wafer surface, such as particles (particles), organic substances (organic), inorganic substances, and metal ions (metal ions).

At present, chemical cleaning liquid is usually sprayed through a spray head on wafer cleaning equipment to remove pollutants on the surface of a wafer, but at present, only one cleaning cavity is arranged in all the wafer cleaning equipment, so that the same cleaning liquid is usually used in the cleaning cavity of one wafer cleaning equipment, different types of chemical cleaning liquid cannot be cleaned in sections in the cleaning cavity of the same wafer cleaning equipment, and the cleaning efficiency of single-wafer cleaning equipment is very low.

In addition, for the wafer cleaning wet process required by 65-14nm pitch and the wafer product with the size of less than 14nm and extending to 5nm pitch, the core problem of the wafer wet process is that the liquid remains in the microstructure of the nano wafer under the action of the size effect. The related structures such as storage-type products DRAM NAND have different metallization microstructures and high aspect ratio patterning distributions, and if a general cleaning method is used, the surface of the nano wafer cannot be cleaned well due to the aggregation of liquid particles, which is a problem to be solved at present.

Disclosure of Invention

In view of the above, the present invention provides a composite chamber structure for wafer cleaning equipment, which is used to solve the problems existing in the background art.

A composite cavity structure for wafer cleaning equipment is arranged in an equipment shell of the wafer cleaning equipment, a spray pipe capable of swinging back and forth is arranged on the equipment shell, a liquid cleaning spray head, an atomization cleaning spray head and a nitrogen spray head are arranged on the spray pipe, the nitrogen spray head faces the atomization cleaning spray head,

the composite cavity structure comprises a cavity shell, a support ring and a second isolation assembly, wherein the support ring is attached to the inner side wall of the cavity shell, the upper end part of the support ring is fixed with the cavity shell through a snap ring, and the second isolation assembly is arranged on the support ring; and the first isolating component is crossed with the second isolating component so as to form a plurality of layers of drainage cavities between the first isolating component and the second isolating component, and the first isolating component is provided with a jacking element which can move up and down so as to change the cavity space size of each layer of drainage cavity.

Preferably, the first isolation assembly comprises a first layer of isolation loops and a third layer of isolation loops, the second isolation assembly comprises a second layer of isolation loops and a fourth layer of isolation loops,

the first layer of isolation ring is buckled with the third layer of isolation ring;

the second layer of isolation ring is arranged between the first layer of isolation ring and the third layer of isolation ring, the bottom of the second layer of isolation ring is supported on the support ring, a first layer of drainage cavity is formed between the first layer of isolation ring and the second layer of isolation ring, and a second layer of drainage cavity is formed between the second layer of isolation ring and the third layer of isolation ring;

the third layer of isolation ring is arranged between the fourth layer of isolation ring and the support ring, and a third layer of drainage cavity is formed between the third layer of isolation ring and the fourth layer of isolation ring;

the fourth layer of isolation ring is fastened and fixed on the inner edge of the support ring, and a first drainage channel is arranged in the fourth layer of isolation ring.

Preferably, the lower surfaces of the first layer of isolation ring, the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are all provided with a splash shield.

Preferably, the catheter grooves are formed in the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring, the catheter grooves in the second layer of isolation ring are communicated with the first layer of drainage cavity, the catheter grooves in the third layer of isolation ring are communicated with the second layer of drainage cavity, and the catheter grooves in the fourth layer of isolation ring are communicated with the third layer of drainage cavity.

Preferably, the upper surfaces of the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are further provided with a spray plate covering the conduit groove, and the spray plate is provided with a plurality of water spray holes arranged in an array.

Preferably, the first layer of isolation ring comprises a first ring body, a first isolation cover which gradually inclines upwards from outside to inside extends from the inner wall of the first ring body, a first ring edge horizontally extends from the outer wall of the first ring body to the periphery, and a first clamping groove is formed in the bottom of the first ring edge.

Preferably, the third layer of isolation ring comprises a third ring body and a third isolation cover arranged on the inner side of the third ring body, a third ring edge fixedly connected with the jacking element horizontally extends from the top of the third ring body to the periphery, a bulge extends upwards from the third ring edge, and the third ring body vertically penetrates through the support ring and enables the bulge to be clamped in the first clamping groove;

the bottom of the third ring body is connected with the third isolation cover through a plurality of connecting pieces.

Preferably, the supporting ring comprises a fifth ring body, a second clamping groove for being buckled with the clamping ring is formed at the top of the fifth ring body,

a supporting convex ring horizontally extends from the middle part of the inner wall of the fifth ring body, the bottom of the second layer of isolation ring is arranged on the supporting convex ring, and a plurality of flow guide holes uniformly distributed in the circumferential direction are formed in the supporting convex ring;

the lower part of the fifth ring body is provided with a plurality of first drainage holes which are uniformly distributed in the circumferential direction and correspond to the drainage holes positioned above the fifth ring body;

the bottom of fifth ring body level inwards extends to have the support ring to follow, and a plurality of second drainage holes have been seted up on the support ring edge.

Preferably, the second layer of isolation ring includes the second ring body, the bottom level of second ring body outwards extends has the second to encircle along, the second encircles along and the junction of second ring body is seted up a plurality of notches at circumference evenly distributed.

Preferably, the fourth layer of isolation ring comprises a fourth ring body, and a plurality of slots equidistantly distributed in the circumferential direction are formed in the fourth ring body;

an inner annular wall which is gradually inclined downwards from inside to outside extends from the top of the outer wall of the fourth ring body,

a first outer ring wall extends out of the bottom of the outer wall of the fourth ring body, the first outer ring wall is bent upwards to form a second drainage channel, and a plurality of third drainage holes used for discharging the cleaning liquid flowing into the channel into a third drainage channel of the cavity shell are formed in the bottom of the second drainage channel;

the middle part of the outer wall of the fourth ring body extends to form a second outer annular wall which is bent upwards, the second outer annular wall is positioned between the inner annular wall and the first outer annular wall, a first drainage channel is formed between the second outer annular wall and the inner annular wall, the first drainage channel is communicated with a first drainage pipe, and the first drainage pipe is arranged at the bottom of the second outer annular wall and penetrates through the first outer annular wall and the cavity shell.

The utility model has the advantages that:

the utility model discloses a set wafer cleaning equipment's washing chamber to cavity size adjustable multilayer drainage chamber, can solve the chemical cleaning liquid of different grade type effectively and can't be at the abluent problem of same wafer cleaning equipment's washing intracavity segmentation, improved monolithic formula wafer cleaning equipment's cleaning efficiency effectively.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a perspective view of a composite cavity structure.

Fig. 2 is a cross-sectional view of a composite cavity structure.

Fig. 3 is a cross-sectional view of a composite cavity structure.

Fig. 4 is a top view of a composite cavity structure.

Fig. 5 is an enlarged view of a portion a in fig. 2.

Fig. 6 is a perspective view of the first layer of isolation loops.

Fig. 7 is a cross-sectional view of the first layer of isolation loops.

Fig. 8 is a perspective view of a second layer of isolation loops.

Fig. 9 is a cross-sectional view of a second layer of isolation loops.

Fig. 10 is a perspective view of the third layer of isolation loops.

Fig. 11 is a cross-sectional view of the third layer of isolation loops.

Fig. 12 is a perspective view of a fourth layer of isolation loops.

Fig. 13 is a cross-sectional view of a fourth layer of isolation loops.

FIG. 14 is a schematic view of cleaning a wafer with an alkaline cleaning solution.

FIG. 15 is a schematic view of a wafer being cleaned with an acidic cleaning solution.

Fig. 16 is a cross-sectional view of the wafer cleaning apparatus.

FIG. 17 is a perspective view of a nanoscopic shower.

Figure 18 is a side view of a nanoscopic shower.

FIG. 19 is a schematic view of the inner tube of a nanospray tube.

FIG. 20 is a schematic view of a showerhead of a nano-scale shower.

FIG. 21 is a schematic view of a mist of cleaning fluid formed by a nanoscale shower tube.

FIG. 22 is a trace diagram of water droplets ejected by a nanoscale shower.

The reference numerals in the figures have the meaning:

1 is a cavity shell, 1-1 is a third drainage channel, and 1-2 is a second liquid discharge pipe;

2 is a supporting ring, 2-1 is a fifth ring body, 2-2 is a second clamping groove, 2-3 is a supporting convex ring, 2-4 is a flow guide hole, 2-5 is a first drainage hole, 2-6 is a supporting ring edge, and 2-7 is a second drainage hole;

3 is a first layer of isolation ring, 3-1 is a first ring body, 3-2 is a first isolation cover, 3-3 is a first ring edge, and 3-4 is a first clamping groove;

4 is a second layer of isolation ring, 4-1 is a second ring body, 4-2 is a second ring edge, and 4-3 is a notch;

5 is a third layer of isolation ring, 5-1 is a third ring body, 5-2 is a third isolation cover, 5-3 is a third ring edge, 5-4 is a bulge, and 5-5 is a connecting piece;

6 is a fourth layer of isolation ring, 6-1 is a fourth ring body, 6-2 is a slotted hole, 6-3 is an inner ring wall, 6-4 is a first outer ring wall, 6-5 is a second outer ring wall, 6-6 is a second drainage channel, 6-7 is a third drainage hole, 6-8 is a first drainage channel, and 6-9 is a first drainage pipe;

7 is a snap ring;

8 is a jacking element;

9 is a first layer of drainage cavity;

10 is a second layer of drainage cavity;

11 is a third layer of drainage cavity;

12 is a wafer;

13 is a guide pipe groove;

14 is a spray plate, and 14-1 is a water spraying hole;

15 is a splash guard;

16 is a water supply pipe;

17 is a nanometer small molecule water generator;

18 is an equipment shell;

19 is a spray pipe, 19-1 is a gas conveying pipeline, 19-2 is an atomization cleaning nozzle, 19-3 is a liquid cleaning nozzle, 19-4 is a nitrogen nozzle, 19-5 ultrasonic oscillation sheets, 19-6 linear rails, 19-7 lifting cylinders, 19-8 mounting plates, 19-9 is a rotary cylinder, 19-10 is a driving gear, 19-11 is a driven gear, 19-12 is a rack, 19-13 is an atomization cleaning pipeline, and 19-14 is a liquid cleaning pipeline.

Detailed Description

For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.

It should be clear that the described embodiments are only some, but not all embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.

The present application is described in further detail below with reference to specific embodiments and with reference to the attached drawings.

In the description of the present application, unless explicitly stated or limited otherwise, the terms "first", "second", and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless specified or indicated otherwise; the terms "connected" and "fixed" are used in a broad sense, for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the description of the present application, it should be understood that the terms "upper", "lower", "left", "right", and the like used in the embodiments of the present application are described with reference to the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In addition, in this context, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on "or" under "the other element or be indirectly on" or "under" the other element via an intermediate element.

The utility model provides a compound cavity structure for wafer cleaning equipment, compound cavity structure sets up in wafer cleaning equipment's equipment casing, but installs swing back and forth's shower on the equipment casing.

The spraying pipe 19 is connected with the equipment shell through a driving mechanism and is driven by the driving mechanism to move up and down and rotate.

The driving mechanism comprises a lifting cylinder 19-7, a rotating cylinder 19-9, a mounting plate 19-8 and a linear track 19-6, wherein the fixed end of the lifting cylinder 19-7 is mounted on a base to provide a supporting point for the action of the lifting cylinder 19-7, the output end of the lifting cylinder 19-7 is connected with a lifting plate, and the lifting plate is slidably mounted on the linear track 19-6 and can move up and down along the linear track 19-6. The fixed section of the rotary cylinder 19-9 is arranged on the mounting plate 19-8, the output end of the rotary cylinder 19-9 is provided with a driving gear 19-10, the end part of the spray pipe is provided with a driven gear 19-11, and the driving gear 19-10 is meshed and connected with the driven gear 19-11 through a rack 19-12. The lifting cylinder 19-7 acts to drive the mounting plate 19-8 to move up and down so as to drive the spraying pipe to move up and down, and the output end of the rotating cylinder 19-9 drives the spraying pipe to rotate through the transmission of the gear rack 19-12 so as to drive the spraying pipe to swing back and forth.

In this embodiment, the spray pipe is a nano-scale SC1 spray pipe disposed in the SC1 cleaning system, and the spray pipe includes a liquid cleaning nozzle, an atomization cleaning nozzle, a nitrogen nozzle, and an ultrasonic oscillation sheet. The nano SC1 spray pipe is L-shaped, the liquid cleaning nozzle 19-3, the atomization cleaning nozzle 19-2 and the nitrogen nozzle are arranged at one end of the spray head, the liquid cleaning pipeline 19-14, the atomization cleaning pipeline 19-13 and the nitrogen gas supply pipeline 19-1 are arranged inside the spray head, one end of the liquid cleaning pipeline 19-14 is connected with the liquid cleaning nozzle 19-3, and the other end is connected with the external liquid supply pipeline. One end of the atomization cleaning pipeline 19-13 is connected with the atomization cleaning nozzle 19-2, the other end of the atomization cleaning pipeline is connected with an external liquid supply pipeline, the atomization cleaning nozzle 19-2 is connected with the ultrasonic oscillation piece 19-5, the ultrasonic oscillation piece 19-5 is connected with an external power supply, atomization of cleaning liquid in the atomization cleaning nozzle 19-2 is achieved through the ultrasonic oscillation piece 19-5, small-particle atomized cleaning liquid is generated, and the nanometer wafer is effectively cleaned. One end of the nitrogen gas supply pipeline 19-1 is connected with a nitrogen nozzle 19-4, the other end of the nitrogen gas supply pipeline is connected with gas supply equipment, the nitrogen nozzle 19-4 faces to the position right below the atomization cleaning nozzle 19-2, the surface energy of liquid drops can be ensured through blowing of nitrogen gas, the liquid drop molecules are prevented from agglomerating, and generating, and a nano-scale water film is formed on the surface of the atomized liquid drops.

In this embodiment, the liquid cleaning nozzle 19-3, the atomizing nozzle 19-2 and the nitrogen nozzle are distributed in a triangular shape, and the liquid cleaning nozzle 19-3 faces the projection of the triangular center on the wafer. The atomization cleaning nozzle 19-2 is an umbrella-shaped nozzle, and the circle center of the atomization cleaning nozzle 19-2 is superposed with the circle center of the wafer. The spray head arrangement adopting the structure is matched with the rotation of the wafer, a cleaning solution diffusion ring can be formed on the surface of the wafer, the spraying radius of the cleaning solution is increased, the cleaning effect of the wafer is improved, and the liquid sprayed by the liquid cleaning spray head 19-3 and the atomization cleaning spray head 19-2 is a mixed liquid of ammonia water and hydrogen peroxide.

The distance between the atomization cleaning nozzle 19-2 and the wafer is set to be 14-30 mm, and the distance between the nitrogen nozzle and the wafer and the distance between the liquid cleaning nozzle 19-3 and the wafer are both smaller than the distance between the atomization cleaning nozzle 19-2 and the wafer. In the embodiment, the distance between the atomizing cleaning nozzle 19-2 and the wafer is small, and the protection effect of nitrogen is combined, so that the atomized micromolecule cleaning liquid can be prevented from being mutually aggregated to form macromolecular liquid drops, and the cleaning effect of the wafer is ensured.

The composite cavity structure comprises a cavity shell 1, a support ring 2, a first isolation component and a second isolation component

The chamber housing 1 is arranged in an equipment housing 18 of the wafer cleaning equipment. A third drainage channel 1-1 is arranged in the cavity shell 1.

The supporting ring 2 is arranged in the cavity housing 1 and is attached to the inner side wall of the cavity housing 1, and the upper end part of the supporting ring is fixed with the cavity housing 1 through a snap ring 7.

The second isolation assembly is disposed on the support collar 2.

The first isolation assembly and the second isolation assembly are crossed to form a plurality of layers of drainage cavities between the first isolation assembly and the second isolation assembly, and the first isolation assembly is provided with a jacking element 8 which can move up and down to change the space size of the cavity of each layer of drainage cavity.

When the jacking element 8 drives the first isolation assembly to move upwards, the chambers of the even-layer drainage cavities formed by the first isolation assembly and the second isolation assembly in a crossed mode are gradually reduced, and the chambers of the odd-layer drainage cavities are gradually increased.

When the jacking element 8 drives the first isolation assembly to move upwards, the chambers of the even-layer drainage cavities formed by the first isolation assembly and the second isolation assembly in a crossed mode are gradually increased, and the chambers of the odd-layer drainage cavities are gradually reduced.

In a first embodiment, the composite chamber structure for a wafer cleaning apparatus in this embodiment includes a chamber housing 1, a support ring 2, a first isolation assembly and a second isolation assembly, where the first isolation assembly is provided with a jacking element 8.

Wherein the first isolation assembly comprises a first layer of isolation loops 3 and a third layer of isolation loops 5, and the second isolation assembly comprises a second layer of isolation loops 4 and a fourth layer of isolation loops 6.

The first-layer isolation ring 3 comprises a first ring body 3-1, a first isolation cover 3-2 which gradually inclines upwards from outside to inside extends from the inner wall of the first ring body 3-1, a first ring edge 3-3 horizontally extends from the outer wall of the first ring body 3-1 to the periphery, and a first clamping groove 3-4 is formed in the bottom of the first ring edge 3-3.

The second layer of isolation ring 4 comprises a second ring body 4-1, a second ring edge 4-2 horizontally extends outwards from the bottom of the second ring body 4-1, and a plurality of notches 4-3 which are uniformly distributed in the circumferential direction are formed in the joint of the second ring edge 4-2 and the second ring body 4-1.

The third layer of isolation ring 5 comprises a third ring body 5-1 and a third isolation cover 5-2 arranged at the inner side of the third ring body 5-1.

A third ring edge 5-3 fixedly connected with the jacking element 8 horizontally extends from the top of the third ring body 5-1 to the periphery, and a bulge 5-4 extends upwards from the third ring edge 5-3.

The bottom of the third ring body 5-1 is connected to the third cage 5-2 by a plurality of connectors 5-5.

The fourth layer isolation ring 6 includes a fourth ring body 6-1.

The fourth ring body 6-1 is provided with a plurality of slotted holes 6-2 which are equidistantly distributed in the circumferential direction.

An inner annular wall 6-3 which is gradually inclined downwards from inside to outside extends from the top of the outer wall of the fourth ring body 6-1, a first outer annular wall 6-4 extends from the bottom of the outer wall of the fourth ring body 6-1, the first outer annular wall 6-4 is bent upwards to form a second drainage channel 6-6, and a plurality of third drainage holes 6-7 used for discharging the cleaning liquid flowing into the channel into a third drainage channel 1-1 of the cavity shell are formed in the bottom of the second drainage channel 6-6. The bottom of the cavity shell 1 is provided with a second liquid discharge pipe 1-2, the second liquid discharge pipe 1-2 is communicated with a third drainage groove 1-1, and liquid in the third drainage groove 1-1 can be discharged to the outside of the device.

The middle part of the outer wall of the fourth ring body 6-1 extends to form a second outer ring wall 6-5 which is bent upwards, the second outer ring wall 6-5 is positioned between the inner ring wall 6-3 and the first outer ring wall 6-4, a first drainage channel 6-8 is formed between the second outer ring wall and the inner ring wall 6-3, the first drainage channel 6-8 is communicated with a first drainage pipe 6-9, and the first drainage pipe 6-9 is arranged at the bottom of the second outer ring wall 6-5 and penetrates through the first outer ring wall 6-4 and the cavity shell 1.

The support ring 2 comprises a fifth ring body 2-1.

The top of the fifth ring body 2-1 is provided with a second clamping groove 2-2 for buckling with the clamping ring 7.

A supporting convex ring 2-3 horizontally extends from the middle part of the inner wall of the fifth ring body 2-1, the bottom of the second layer of isolation ring 4 is arranged on the supporting convex ring 2-3, and a plurality of flow guide holes 2-4 uniformly distributed in the circumferential direction are arranged on the supporting convex ring 2-3.

The lower part of the fifth ring body 2 is provided with a plurality of first drainage holes 2-5 which are uniformly distributed in the circumferential direction and correspond to the flow guide holes 2-4 positioned above the fifth ring body.

A support ring edge 2-6 is horizontally extended inwards from the bottom of the fifth ring body 2, and a plurality of second drainage holes 2-7 are formed in the support ring edge 2-6.

The equipment the utility model discloses a during composite chamber structure, at first, will support ring 2 and place in cavity shell 1, make support ring 2 laminate mutually with cavity shell 1's inboard wall to will support ring 2 and fix as an organic whole with cavity shell 1 through snap ring 7.

Then, the second layer of isolation ring 4 is arranged on the supporting convex ring 2-3 of the supporting ring, and the supporting convex ring 2-3 supports the second layer of isolation ring 4.

Then, a third layer of isolation ring 5 is arranged between a fourth layer of isolation ring 6 and the support ring 2, a third ring body 5-1 of the third layer of isolation ring 5 vertically penetrates through the support ring 2, a bulge 5-4 at the top of the third ring body 5-1 is clamped in a first clamping groove 3-4 of the first layer of isolation ring, so that the second layer of isolation ring 4 is arranged between the first layer of isolation ring 3 and the third layer of isolation ring 5, the upper end of the third layer of isolation ring 5 is buckled with the first layer of isolation ring 3, and the first layer of isolation ring 3 and the third layer of isolation ring 5 are fixed into a whole.

Form first layer drainage chamber 9 between first layer isolation ring 3 and the second layer isolation ring 4, form second layer drainage chamber 10 between second layer isolation ring 4 and the third layer isolation ring 5, form third layer drainage chamber 11 between third layer isolation ring 5 and the fourth layer isolation ring 6.

And then, fastening and fixing a fourth layer of isolation ring 6 on a support ring edge 2-6 of the support ring, wherein a first drainage channel 6-8 and a second drainage channel 6-6 are arranged inside the fourth layer of isolation ring 6, the first drainage channel 6-8 is positioned between the inner annular wall 6-3 and the second outer annular wall 6-5, and the second drainage channel 6-6 is formed by bending the first outer annular wall 6-4 upwards.

And finally, fixing the jacking element 8 and the third ring edge 5-3 of the third layer of isolation ring, so that when the jacking element 8 is started, the jacking element 8 can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move.

In this embodiment, the jacking element 8 is a cylinder, a piston rod of the cylinder is fixed to the third ring edge 5-3 of the third isolation ring, and a cylinder barrel of the cylinder can be mounted on an equipment housing of the wafer cleaning equipment or mounted in other places.

Specifically, when the piston rod of the cylinder pushes upwards to enable the first layer isolation ring 3 and the third layer isolation ring 5 to move upwards synchronously, the size of the cavity of the first layer drainage cavity 9 and the size of the cavity of the third layer drainage cavity 11 can be gradually increased, the size of the cavity of the second layer drainage cavity 10 can be gradually decreased, when the third isolation cover 5-2 of the third layer isolation ring 5 is attached to the upper portion of the second layer isolation ring 4, the second layer drainage cavity 10 is hidden and disappears, and the cavity of the first layer drainage cavity 9 and the third layer drainage cavity 11 reaches the maximum state.

When the piston rod of the cylinder drives the first layer isolation ring 3 and the third layer isolation ring 5 to synchronously move downwards, the sizes of the chambers of the first layer drainage chamber 9 and the third layer drainage chamber 11 can be gradually reduced, the size of the chamber of the second layer drainage chamber 10 can be gradually increased, when the first isolation cover 3-2 of the first layer isolation ring 3 is attached to the upper part of the second layer isolation ring 4, and the third isolation cover 5-2 of the third layer isolation ring is attached to the second outer ring wall 6-5 of the fourth layer isolation ring, the chamber of the second layer drainage chamber 10 reaches the maximum state, and the chambers of the first layer drainage chamber 9 and the third layer drainage chamber 11 are hidden.

This application sets the washing chamber with wafer cleaning equipment to the multilayer drainage chamber of cavity size adjustable, can solve the unable abluent problem of segmentation in the washing intracavity of same wafer cleaning equipment of chemical cleaning liquid of different grade type effectively, has improved monolithic formula wafer cleaning equipment's cleaning efficiency effectively.

The following is a detailed description of the operation of the present invention by way of example:

when the wafer is required to be cleaned by alkaline chemical cleaning solution, the cylinder can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move downwards until the chambers of the first layer of drainage cavity 9 and the third layer of drainage cavity 11 are hidden and the chamber of the second layer of drainage cavity 10 reaches the maximum state, as shown in fig. 14, then the wafer height is adjusted by using a wafer supporting device of the wafer cleaning equipment, so that the wafer 12 is flush with the upper edge of the third isolation cover 5-2 or slightly higher than the upper edge of the third isolation cover 5-2, then the alkaline chemical cleaning solution is sprayed to the upper surface of the wafer from top to bottom by using a spray pipe on the wafer cleaning equipment, flows into the second layer of drainage cavity 10 from the periphery of the wafer 12, then flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage hole 2-5 of the supporting ring, and finally, the wastewater is discharged to the outside of the equipment through a second liquid discharge pipe 1-2.

When the wafer is required to be cleaned by the acidic chemical cleaning solution, the cylinder can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move upwards, as shown in fig. 15, then the wafer height is adjusted by using the wafer supporting device of the wafer cleaning equipment, so that the wafer 12 is flush with or slightly higher than the upper edge of the inner ring wall 6-3 of the fourth layer of isolation ring, then the acidic chemical cleaning solution is sprayed to the upper surface of the wafer 12 from top to bottom by using the spray pipe on the wafer cleaning equipment, flows into the first flow guide channel 6-8 from the periphery of the wafer 12, and is discharged to the outside of the equipment through the first liquid discharge pipe 6-9.

In the second embodiment, the structure of the composite chamber for wafer cleaning equipment in the first embodiment is substantially the same as that in the first embodiment, specifically, conduit grooves 13 are formed in the second isolation ring 4, the third isolation ring 5 and the fourth isolation ring 6, the conduit grooves in the second isolation ring 4 are communicated with the first drainage chamber 9, the conduit grooves in the third isolation ring 5 are communicated with the second drainage chamber 10, and the conduit grooves in the fourth isolation ring 6 are communicated with the third drainage chamber 11.

The conduit groove on the second layer of isolation ring 4 is disposed within its second ring body 4-1.

The conduit groove on the third layer of isolation ring 5 is arranged in the third isolation cover 5-2 thereof.

The duct channels in the fourth layer of isolating collar 6 are provided in its inner annular wall 6-3 and second outer annular wall 6-5, respectively.

The conduit grooves in the second layer of isolation ring 4, the third layer of isolation ring 5 and the fourth layer of isolation ring 6 are all connected with a nanometer small molecule water generator 17 through a water supply pipe 16. The nano small molecule water generator 17 is used for filtering water, and sending the filtered water to a corresponding catheter groove through a water supply pipe 16 to clean chemical cleaning liquid remained in each drainage cavity.

Preferably, the upper surfaces of the second layer of isolation ring 4, the third layer of isolation ring 5 and the fourth layer of isolation ring 6 are further provided with a spray plate 14 covering the conduit groove, and the spray plate 14 is provided with a plurality of water spray holes 14-1 arranged in an array.

After the wafer cleaning operation is finished, the filtered water can be sent to the corresponding conduit groove 13 through the water supply pipe 16 by the nano small molecule water generator 17, and then the water is sprayed into each drainage cavity through the spray plate on the surface of the conduit groove 13, so as to clean the chemical cleaning liquid remaining in each drainage cavity, as shown in fig. 3 and 16.

Specifically, the water delivered to the conduit grooves of the second isolation ring 4 is sprayed to the lower surface of the first isolation ring 3 through the spray plate on the surface of the first isolation ring, and the sewage mixed with the residual chemical cleaning solution enters the first drainage cavity 9 and then flows into the third drainage channel 1-1 of the cavity shell through the first drainage cavity 9, the flow guide holes 2-4 of the support ring and the first drainage holes 2-5.

The water conveyed to the conduit groove of the third layer of isolation ring 5 is sprayed to the lower surface of the second layer of isolation ring 4 through the spraying plate on the surface of the conduit groove, the sewage mixed with the residual chemical cleaning solution enters the second layer of drainage cavity 10, and then flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage holes 2-5 of the supporting ring.

The water conveyed to the conduit groove in the second outer ring wall 6-5 of the fourth layer of isolation ring 6 is sprayed to the lower surface of the third layer of isolation ring 5 through the spraying plate on the surface of the water, the sewage mixed with the residual chemical cleaning solution enters the third layer of drainage cavity 11, and then flows into the third drainage channel 1-1 of the cavity shell through the third layer of drainage cavity 11, the first drainage holes 2-5 of the supporting ring, the second drainage channel 6-6 and the third drainage holes 6-7 at the bottom of the second drainage channel 6-6.

The sewage flowing into the third drainage channel 1-1 is discharged to the outside of the equipment through the second sewage discharge pipe 1-2.

The water delivered to the conduit groove in the inner annular wall 6-3 of the fourth layer of isolation ring 6 is sprayed to the lower surface of the second outer annular wall 6-5 through the spraying plate on the surface of the water, and the sewage mixed with residual chemical cleaning liquid enters the first drainage channel 6-8 and is discharged to the outside of the equipment through the first drainage pipe 6-9.

In this embodiment, other specific embodiments are the same as the first embodiment, and are not described herein again in detail.

In the third embodiment, the structure of the composite chamber for a wafer cleaning apparatus in this embodiment is substantially the same as that of the first or second embodiment, except that the lower surfaces of the first, second, third and fourth isolation rings 3, 4, 5 and 6 are provided with a sputtering-proof plate 15.

In this embodiment, other specific embodiments are the same as the first embodiment or the second embodiment, and are not described herein again in detail.

The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A composite cavity structure for wafer cleaning equipment is characterized in that the composite cavity structure is arranged in an equipment shell of the wafer cleaning equipment, a spraying pipe capable of swinging back and forth is arranged on the equipment shell, a liquid cleaning spray head, an atomization cleaning spray head and a nitrogen spray head are arranged on the spraying pipe, the nitrogen spray head faces the atomization cleaning spray head,

2. The composite chamber structure for wafer cleaning equipment as claimed in claim 1, wherein the first isolation assembly comprises a first layer of isolation rings and a third layer of isolation rings, the second isolation assembly comprises a second layer of isolation rings and a fourth layer of isolation rings,

3. The composite chamber structure for wafer cleaning equipment as claimed in claim 2, wherein the lower surfaces of the first layer of isolation ring, the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are provided with a splash shield.

4. The composite cavity structure for the wafer cleaning equipment as claimed in claim 2 or 3, wherein the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are all provided with conduit grooves, the conduit grooves on the second layer of isolation ring are communicated with the first layer of drainage cavity, the conduit grooves on the third layer of isolation ring are communicated with the second layer of drainage cavity, and the conduit grooves on the fourth layer of isolation ring are communicated with the third layer of drainage cavity.

5. The composite chamber structure for wafer cleaning equipment as claimed in claim 4, wherein the upper surfaces of the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are further provided with a spray plate covering the conduit groove, and the spray plate is provided with a plurality of water spray holes arranged in an array.

6. The composite chamber structure of claim 2 or 3, wherein the first isolation ring comprises a first ring body, a first isolation cover gradually inclining upwards from outside to inside extends from the inner wall of the first ring body, a first ring edge horizontally extends from the outer wall of the first ring body to the periphery, and a first clamping groove is formed at the bottom of the first ring edge.

7. The composite chamber structure of claim 6, wherein the third isolation ring comprises a third ring body and a third isolation cover disposed inside the third ring body, a third rim fixedly connected to the lift-up element extends horizontally from the top of the third ring body, a protrusion extends upward from the third rim, and the third ring body vertically penetrates through the support ring and is clamped in the first clamping groove;

8. The composite chamber structure of claim 7, wherein the support ring comprises a fifth ring body, a second engaging groove for engaging with the retaining ring is formed at the top of the fifth ring body,

9. The composite chamber structure for wafer cleaning equipment as claimed in claim 2 or 3, wherein the second layer of isolation ring comprises a second ring body, a second ring edge extends horizontally outwards from the bottom of the second ring body, and a plurality of notches are formed at the connection position of the second ring edge and the second ring body and are uniformly distributed in the circumferential direction.

10. The composite chamber structure for wafer cleaning equipment as claimed in claim 2 or 3, wherein the fourth layer of isolation ring comprises a fourth ring body, and a plurality of slots are formed in the fourth ring body and are distributed at equal intervals in the circumferential direction;