CN112845300B - High clean wafer wet cleaning device - Google Patents

High clean wafer wet cleaning device Download PDF

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Publication number
CN112845300B
CN112845300B CN202011635599.8A CN202011635599A CN112845300B CN 112845300 B CN112845300 B CN 112845300B CN 202011635599 A CN202011635599 A CN 202011635599A CN 112845300 B CN112845300 B CN 112845300B
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China
Prior art keywords
wafer
layer
cleaning
isolation
ring
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CN202011635599.8A
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Chinese (zh)
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CN112845300A (en
Inventor
邓信甫
陈丁堃
刘大威
吴海华
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Jiangsu Qiwei Semiconductor Equipment Co ltd
Zhiwei Semiconductor Shanghai Co Ltd
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Jiangsu Qiwei Semiconductor Equipment Co ltd
Zhiwei Semiconductor Shanghai Co Ltd
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Priority to CN202011635599.8A priority Critical patent/CN112845300B/en
Publication of CN112845300A publication Critical patent/CN112845300A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a high-cleanness wafer wet cleaning device which comprises a working cabin and wafer cleaning equipment arranged in the working cabin, wherein the wafer cleaning equipment comprises a cleaning tank and a cleaning device body; a fan filtering unit used for blowing pure gas to the wafer cleaning equipment is arranged on the working cabin; the wafer cleaning equipment comprises an equipment shell, a composite cavity structure arranged in the equipment shell and a wafer supporting structure arranged in the composite cavity structure; the equipment shell is provided with an air extraction device and at least one spray pipe; the wafer supporting structure is used for suspending the wafer above the wafer supporting structure and spraying cleaning solution to the back of the wafer; the composite cavity structure is internally provided with a plurality of layers of drainage cavities with adjustable cavity sizes, and the composite cavity structure is used for enabling cleaning liquid on the surface and the back of the wafer to flow to the outside of the equipment from the corresponding drainage cavities in different working modes. The cleaning capability of the invention is greatly improved, the cleaning efficiency and the cleaning effect are improved, and the wafer quality is effectively ensured.

Description

High clean wafer wet cleaning device
Technical Field
The invention relates to the technical field of semiconductor process equipment, in particular to a high-cleanness wafer wet cleaning device.
Background
Chemical cleaning is a method of removing impurities attached to the surface of an object using various chemical agents or organic solvents. In the field of semiconductor manufacturing, chemical cleaning refers to a process for removing various harmful impurities or oil stains adsorbed on the surfaces of objects such as semiconductors, metal materials, and tools.
Wafer cleaning is a process of removing contaminants from a whole batch or a single wafer by chemical cleaning, such as soaking or spraying chemicals, and is mainly used to remove contaminants on the wafer surface, such as particles (particles), organic substances (organic), inorganic substances, and metal ions (metal ions).
At present, chemical cleaning liquid is usually sprayed through a spray head on wafer cleaning equipment to remove pollutants on the surface of a wafer, but at present, only one cleaning cavity is arranged in all the wafer cleaning equipment, so that the same cleaning liquid is usually used in the cleaning cavity of one wafer cleaning equipment, different types of chemical cleaning liquid cannot be cleaned in sections in the cleaning cavity of the same wafer cleaning equipment, and the cleaning efficiency of single-wafer cleaning equipment is very low.
Moreover, only the traditional spray pipe which sprays cleaning liquid from top to bottom is arranged on the wafer cleaning equipment, the traditional design can only clean the upper surface of the wafer, and in the cleaning process, under the action of centrifugal force, the cleaned particle pollutants are easy to accumulate at the periphery of the wafer, and the particle pollutants accumulated at the periphery of the wafer can be adhered to the back of the wafer under the influence of a flow field at the bottom of the wafer.
Disclosure of Invention
Accordingly, the present invention is directed to a wet cleaning apparatus for high-cleanliness wafer, which is used to solve the above-mentioned problems in the prior art.
A high-cleanness wafer wet cleaning device comprises a working cabin and wafer cleaning equipment arranged in the working cabin;
a fan filtering unit used for blowing pure gas to the wafer cleaning equipment is arranged on the working cabin;
the wafer cleaning equipment comprises an equipment shell, a composite cavity structure arranged in the equipment shell and a wafer supporting structure arranged in the composite cavity structure;
the equipment comprises an equipment shell, a composite cavity structure and a nitrogen gas supply pipeline, wherein the equipment shell is provided with an air exhaust device communicated with the composite cavity structure and used for exhausting waste gas in the composite cavity structure and at least one spray pipe used for spraying cleaning liquid or gas to the surface of a wafer, one spray pipe is a nanoscale spray pipe, the nanoscale spray pipe is provided with a liquid cleaning spray head connected with a liquid cleaning pipeline, an atomization cleaning spray head connected with the atomization cleaning pipeline, a nitrogen spray head connected with the nitrogen gas supply pipeline and an ultrasonic oscillation sheet, the atomization cleaning spray head is connected with the ultrasonic oscillation sheet, the ultrasonic oscillation sheet is connected with an external power supply, and the nitrogen gas spray nozzle faces the atomization cleaning spray head;
the wafer supporting structure is used for enabling a wafer to be suspended above the wafer supporting structure and spraying cleaning liquid to the back of the wafer;
the composite cavity structure is internally provided with a plurality of layers of drainage cavities with adjustable cavity sizes, and the composite cavity structure is used for enabling cleaning liquid on the surface and the back of the wafer to flow to the outside of the equipment from the corresponding drainage cavities in different working modes.
Preferably, the composite cavity structure comprises:
a cavity housing;
a support ring which is attached to the inner side wall of the cavity shell and the upper end of which is fixed with the cavity shell through a snap ring;
a second isolation assembly disposed on the support collar;
and the first isolation assembly is crossed with the second isolation assembly so as to form a plurality of layers of drainage cavities between the first isolation assembly and the second isolation assembly, and the first isolation assembly is provided with a jacking element which can move up and down so as to change the size of the cavity space of each layer of drainage cavity.
Preferably, the first isolation assembly comprises a first layer of isolation loops and a third layer of isolation loops, the second isolation assembly comprises a second layer of isolation loops and a fourth layer of isolation loops,
the first layer of isolation ring is buckled with the third layer of isolation ring;
the second layer of isolation ring is arranged between the first layer of isolation ring and the third layer of isolation ring, the bottom of the second layer of isolation ring is supported on the support ring, a first layer of drainage cavity is formed between the first layer of isolation ring and the second layer of isolation ring, and a second layer of drainage cavity is formed between the second layer of isolation ring and the third layer of isolation ring;
the third layer of isolation ring is arranged between the fourth layer of isolation ring and the support ring, and a third layer of drainage cavity is formed between the third layer of isolation ring and the fourth layer of isolation ring;
the fourth layer of isolation ring is fastened and fixed on the inner edge of the support ring, and a first drainage channel is arranged in the fourth layer of isolation ring.
Preferably, the lower surfaces of the first layer of isolation ring, the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are all provided with splash shields.
Preferably, the catheter grooves are formed in the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring, the catheter groove in the second layer of isolation ring is communicated with the first layer of drainage cavity, the catheter groove in the third layer of isolation ring is communicated with the second layer of drainage cavity, and the catheter groove in the fourth layer of isolation ring is communicated with the third layer of drainage cavity.
Preferably, the upper surfaces of the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are further provided with a spray plate covering the conduit groove, and the spray plate is provided with a plurality of water spray holes arranged in an array.
Preferably, the wafer supporting structure comprises a cleaning mechanism and a jacking rotating mechanism for driving the cleaning mechanism to move up and down and rotate in the circumferential direction,
the cleaning mechanism comprises a wafer positioning component sleeved on the jacking rotating mechanism and a pipe fitting shell buckled and fixed on the wafer positioning component, a wafer adsorption pipe and a cleaning liquid conveying pipe are arranged in the pipe fitting shell,
the wafer adsorption pipe vertically penetrates through the jacking rotating mechanism and is used for spraying air flow which enables the upper surface and the lower surface of the wafer to form pressure difference so as to enable the wafer to be suspended above the cleaning mechanism;
the cleaning liquid conveying pipe vertically penetrates through the jacking rotating mechanism and is communicated with an inclined nozzle arranged on the pipe fitting shell, and the cleaning liquid conveying pipe is used for conveying cleaning liquid for cleaning pollutants on the lower surface of the wafer.
Preferably, the wafer positioning assembly comprises a first wafer positioner, a second wafer positioner and a third wafer positioner, the first wafer positioner and the second wafer positioner are sleeved on the jacking rotating mechanism, the third wafer positioner is fixedly buckled with the first wafer positioner and the second wafer positioner respectively, and a plurality of supporting seats are installed at the top of the third wafer positioner.
Preferably, the jacking rotary mechanism comprises a motor and a lifting mechanism, the motor is fixed on the lifting mechanism, the first wafer positioner is sleeved on a rotating shaft of the motor, a rotating bearing is sleeved at the end part of the rotating shaft of the motor, and the second wafer positioner is sleeved outside the rotating bearing.
Preferably, the pipe fitting shell comprises a pipe fitting lower shell, a pipe fitting upper shell buckled with the pipe fitting lower shell, and a fixing piece vertically penetrating through the pipe fitting upper shell, and the wafer adsorption pipe and the cleaning liquid conveying pipe are fixed in the fixing piece and vertically penetrate through the jacking and rotating mechanism.
The beneficial effects of the invention are:
1. according to the invention, the cleaning cavity of the wafer cleaning equipment is set into the multilayer drainage cavity with the adjustable cavity size, so that the problem that different types of chemical cleaning liquids cannot be cleaned in the cleaning cavity of the same wafer cleaning equipment in a segmented manner can be effectively solved, and the cleaning efficiency of the single wafer cleaning equipment is effectively improved.
2. According to the invention, the special wafer supporting structure is arranged in the cavity of the wafer cleaning equipment, and the structure makes the wafer suspend above the special wafer supporting structure by utilizing the Bernoulli principle, so that pollutants on the lower surface of the wafer can be thoroughly cleaned, and especially, the cleaning blind area on the lower surface of the wafer can be cleaned.
3. According to the invention, the purpose-made wafer supporting structure is arranged in the cavity of the wafer cleaning equipment, so that the problem that particle pollutants cleaned from the surface of the wafer are accumulated on the periphery of the wafer and are adhered to the back of the wafer can be effectively solved, the wafer cleaning equipment can simultaneously clean the surface and the back of the wafer, the particle pollutants are not accumulated on the periphery of the wafer, the cleaning capability of the wafer cleaning equipment is greatly improved, the cleaning efficiency and the cleaning effect are improved, and the quality of the wafer is effectively ensured.
4. Through set up wafer adsorption tube and washing liquid conveyer pipe in wafer bearing structure's pipe fitting shell, the partial pollutant of wafer lower surface can be smugglied away with to the air current that can make the wafer suspension that the wafer adsorption tube erupted, and the washing liquid conveyer pipe carries the washing liquid of slope nozzle can carry out rinse thoroughly to the wafer lower surface, has not only improved the cleaning performance, has improved the cleaning efficiency, also can reduce the consumption of washing liquid, can reduce the manufacturing cost of enterprise.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a perspective view of a composite cavity structure.
Fig. 2 is a cross-sectional view of a composite cavity structure.
Fig. 3 is an enlarged view of a portion a in fig. 2.
Fig. 4 is a perspective view of the first layer of isolation loops.
Fig. 5 is a cross-sectional view of the first layer of isolation loops.
Fig. 6 is a perspective view of a second layer of isolation loops.
Fig. 7 is a cross-sectional view of a second layer of isolation loops.
Fig. 8 is a perspective view of a third layer of isolation loops.
Fig. 9 is a cross-sectional view of a third layer of isolation loops.
Fig. 10 is a perspective view of a fourth layer of isolation loops.
Fig. 11 is a cross-sectional view of a fourth layer of isolation loops.
FIG. 12 is a schematic view of a wafer being cleaned with an alkaline cleaning solution.
FIG. 13 is a schematic view of a wafer being cleaned with an acidic cleaning solution.
Figure 14 is a cross-sectional view of one of the views of the wafer cleaning apparatus.
Fig. 15 is a schematic structural view of a wafer support structure.
FIG. 16 is a schematic view of the cleaning solution delivery pipe jetting the cleaning solution.
Fig. 17 is a schematic view of the airflow from the wafer chuck tube entraining contamination.
Fig. 18 is a sectional view of the cleaning mechanism.
Fig. 19 is a cross-sectional view of a third wafer positioner.
Fig. 20 is a schematic view of the structure of the housing on the pipe.
Fig. 21 is a schematic view of the structure of the fixing member.
Figure 22 is a schematic view of the attachment of the splash shield to the spray ring.
Figure 23 is a cross-sectional view of another perspective of the wafer cleaning apparatus.
Fig. 24 is a perspective view of the wafer cleaning apparatus.
Fig. 25 is a perspective view of a high-clean wafer wet cleaning apparatus.
Fig. 26 is a top view of the wafer cleaning apparatus of the present invention.
FIG. 27 is a perspective view of a nanoscopic shower.
Figure 28 is a side view of a nanoscopic shower.
FIG. 29 is a schematic view of the inner tube of a nanoscopic shower.
FIG. 30 is a schematic view of a showerhead of a nano-scale shower.
FIG. 31 is a schematic view of a mist of cleaning fluid formed by a nanoscopic shower.
The designations in the figures mean:
1 is a cavity shell, 1-1 is a third drainage channel, and 1-2 is a second liquid discharge pipe;
2 is a supporting ring, 2-1 is a fifth ring body, 2-2 is a second clamping groove, 2-3 is a supporting convex ring, 2-4 is a flow guide hole, 2-5 is a first drainage hole, 2-6 is a supporting ring edge, and 2-7 is a second drainage hole;
3 is a first layer of isolation ring, 3-1 is a first ring body, 3-2 is a first isolation cover, 3-3 is a first ring edge, and 3-4 is a first clamping groove;
4 is a second layer of isolation ring, 4-1 is a second ring body, 4-2 is a second ring edge, and 4-3 is a notch;
5 is a third layer of isolation ring, 5-1 is a third ring body, 5-2 is a third isolation cover, 5-3 is a third ring edge, 5-4 is a bulge, and 5-5 is a connecting piece;
6 is a fourth layer of isolation ring, 6-1 is a fourth ring body, 6-2 is a slotted hole, 6-3 is an inner ring wall, 6-4 is a first outer ring wall, 6-5 is a second outer ring wall, 6-6 is a second drainage channel, 6-7 is a third drainage hole, 6-8 is a first drainage channel, and 6-9 is a first drainage pipe;
7 is a snap ring; 8 is a jacking element; 9 is a first layer of drainage cavity; 10 is a second layer of drainage cavity; 11 is a third layer of drainage cavity; 12 is an air extracting device; 13 is a guide pipe groove; 14 is a spray plate, and 14-1 is a water spraying hole; 15 is a splash guard; 16 is a water supply pipe; 17 is a nanometer small molecule water generator; 18 is an equipment shell, and 18-1 is a cavity; 19 is a wafer;
20 is a cleaning mechanism, 20-1 is a wafer adsorption tube, 20-2 is a cleaning liquid delivery tube, 20-3 is a first wafer positioner, 20-4 is a second wafer positioner, 20-5 is a third wafer positioner, 20-6 is a support seat, 20-7 is a first fixing groove, 20-8 is a second fixing groove, 20-9 is a third fixing groove, 20-10 is a fourth fixing groove, 20-11 is an annular bulge, 20-12 is a lower shell of the pipe fitting, 20-13 is an upper shell of the pipe fitting, 20-14 is a fixing piece, 20-15 is a buckling groove, 20-16 gaps, 20-17 is an inclined nozzle, 20-15 is a fifth fixing groove, and 20-16 is a sixth fixing groove;
21 is a jacking rotating mechanism, 21-1 is a motor, 21-2 is a lifting mechanism, 21-3 is a rotating shaft, and 21-4 is a rotating bearing; 22 is a contaminant;
23 is a spray pipe, 23-1 is a gas conveying pipeline, 23-2 is an atomization cleaning nozzle, 23-3 is a liquid cleaning nozzle, 23-4 is a nitrogen nozzle, 23-5 ultrasonic oscillation pieces, 23-6 linear rails, 23-7 lifting cylinders, 23-8 mounting plates, 23-9 is a rotary cylinder, 23-10 is a driving gear, 23-11 is a driven gear, 23-12 is a rack, 23-13 is an atomization cleaning pipeline, and 23-14 is a liquid cleaning pipeline;
24 is a splash guard; 25 is a spray ring, and 25-1 is an inclined spray head; 26 is a working chamber, 26-1 is wafer cleaning equipment, and 26-2 is a fan filtering unit.
Detailed Description
For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.
The invention provides a high-cleanness wafer wet cleaning device which comprises a working cabin and wafer cleaning equipment arranged in the working cabin.
The working cabin is a sealed chamber, and the wafer cleaning equipment is arranged in the chamber and can complete the operations of chemical cleaning, deionized water flushing, waste gas extraction and the like of the wafer at one time.
Install fan filter unit on the work module, fan filter unit is used for blowing pure gas in order to weather the abluent wafer to wafer cleaning equipment, and pure gas also can blow the volatile gaseous state chemical liquid in the wafer cleaning process to the device outside simultaneously.
The wafer cleaning equipment comprises an equipment shell 18, a composite cavity structure arranged in the equipment shell 18 and a wafer supporting structure arranged in the composite cavity structure.
The equipment housing 18 is provided with a suction device 12 and at least one shower 23. The air extractor 12 is installed outside the equipment housing 18, an air extracting pipe of the air extractor extends into the equipment housing 18 and is communicated with the composite cavity structure, the air extractor 12 is used for extracting waste gas inside the composite cavity structure, and the waste gas refers to gaseous chemical liquid formed by volatilization in the wafer cleaning process. The shower pipe 23 is used for spraying a chemical cleaning liquid or gas to the surface of the wafer from top to bottom.
The equipment shell 18 is provided with a fixed spray pipe and a plurality of spray pipes 23 which can swing back and forth and are used for spraying cleaning liquid or gas to the surface of the wafer, wherein the fixed spray pipe is arranged in a D area of the equipment shell 18, and other spray pipes which can swing back and forth are arranged in an A area and/or a B area and/or a C area of the equipment shell 18.
Specifically, each of the reciprocally swingable shower pipes 23 is connected to the apparatus casing through a driving mechanism, and is driven by the driving mechanism to perform up-and-down movement and rotational movement.
The driving mechanism comprises a lifting cylinder 23-7, a rotating cylinder 23-9, a mounting plate 23-8 and a linear track 23-6, wherein the fixed end of the lifting cylinder 23-7 is mounted on a base to provide a supporting point for the action of the lifting cylinder 23-7, the output end of the lifting cylinder 23-7 is connected with a lifting plate, and the lifting plate is slidably mounted on the linear track 23-6 and can move up and down along the linear track 23-6. The fixed section of the rotary cylinder 23-9 is arranged on the mounting plate 23-8, the output end of the rotary cylinder 23-9 is provided with a driving gear 23-10, the end part of the spray pipe is provided with a driven gear 23-11, and the driving gear 23-10 is meshed with the driven gear 23-11 through a rack 23-12. The lifting cylinder 23-7 acts to drive the mounting plate 23-8 to move up and down, so that the spraying pipe is driven to move up and down, and the output end of the rotating cylinder 23-9 drives the spraying pipe to rotate through the transmission of the gear rack 23-12, so that the spraying pipe is driven to swing back and forth.
In this embodiment, the shower pipes are provided with four kinds, including a fixed shower pipe arranged in the D region and three kinds of shower pipes which are arranged in the A, B, C region and can swing back and forth.
The spray pipe arranged in the area A is a nanoscale SC1 spray pipe configured in the SC1 cleaning system, and the spray pipe comprises a liquid cleaning spray head, an atomization cleaning spray head, a nitrogen nozzle and an ultrasonic oscillation sheet. The nano-scale SC1 spray pipe is L-shaped as a whole, the liquid cleaning spray head 23-3, the atomization cleaning spray head 23-2 and the nitrogen spray head are arranged at one end of the spray head, the liquid cleaning pipeline 23-14, the atomization cleaning pipeline 23-13 and the nitrogen supply pipeline 23-15 are arranged inside the spray head, one end of the liquid cleaning pipeline 23-14 is connected with the liquid cleaning spray head 23-3, and the other end is connected with an external liquid supply pipeline. One end of the atomization cleaning pipeline 23-13 is connected with the atomization cleaning nozzle 23-2, the other end of the atomization cleaning pipeline is connected with an external liquid supply pipeline, the atomization cleaning nozzle 23-2 is connected with the ultrasonic oscillation piece 23-5, the ultrasonic oscillation piece 23-5 is connected with an external power supply, atomization of cleaning liquid in the atomization cleaning nozzle 23-2 is achieved through the ultrasonic oscillation piece 23-5, small-particle atomized cleaning liquid is generated, and the nanometer wafer is effectively cleaned. One end of the nitrogen gas supply pipeline 23-15 is connected with the nitrogen gas nozzle 23-4, the other end is connected with a gas supply device, the nitrogen gas nozzle 23-4 faces to the position right below the atomization cleaning nozzle 23-2, the surface energy of liquid drops can be ensured through blowing of nitrogen gas, the liquid drop molecules are prevented from agglomerating, and a nano-scale water film is formed on the surfaces of the atomized liquid drops.
In this embodiment, the liquid cleaning nozzle 23-3, the atomizing nozzle 23-2, and the nitrogen nozzle are distributed in a triangle, and the liquid cleaning nozzle 23-3 faces the projection of the triangle on the wafer. The atomizing cleaning nozzle 23-2 is an umbrella-shaped nozzle, and the circle center of the atomizing cleaning nozzle 23-2 is superposed with the circle center of the wafer. The spray head arrangement adopting the structure is matched with the rotation of the wafer, a cleaning solution diffusion ring can be formed on the surface of the wafer, the spraying radius of the cleaning solution is increased, the cleaning effect of the wafer is improved, and the liquid sprayed by the liquid cleaning spray head 23-3 and the atomization cleaning spray head 23-2 is a mixed liquid of ammonia water and hydrogen peroxide.
The distance between the atomization cleaning nozzle 23-2 and the wafer is set to be 14-30 mm, and the distance between the nitrogen nozzle and the wafer and the distance between the liquid cleaning nozzle 23-3 and the wafer are both smaller than the distance between the atomization cleaning nozzle 23-2 and the wafer. In the embodiment, the distance between the atomizing cleaning nozzle 23-2 and the wafer is small, and the protection effect of nitrogen is combined, so that the atomized micromolecule cleaning liquid can be prevented from being mutually aggregated to form macromolecular liquid drops, and the cleaning effect of the wafer is ensured.
The spray pipe arranged in the area B is an SPM spray pipe and is used for spraying sulfuric acid or hydrogen peroxide.
The spray pipe arranged in the area C is used for spraying ultrapure water, hydrofluoric acid or other special chemical solutions.
And the spray pipe arranged in the area D is used for spraying ultrapure water or nitrogen.
The showering pipes of the areas B, C and D are all traditional showering pipes, and their respective structures are not described in detail herein.
The wafer support structure is used to suspend the wafer 19 above it and spray a cleaning solution onto the backside of the wafer 19.
The composite cavity structure is internally provided with a plurality of layers of drainage cavities with adjustable cavity sizes, and is used for enabling the cleaning liquid on the surface and the back of the wafer 19 to flow to the outside of the equipment from the corresponding drainage cavities according to the type of the chemical cleaning liquid.
Specifically, the composite cavity structure comprises a cavity housing 1, a support ring 2, a first isolation component and a second isolation component.
The chamber housing 1 is arranged in an equipment housing 18 of the wafer cleaning equipment. A third drainage channel 1-1 is arranged in the cavity shell 1.
The supporting ring 2 is arranged in the cavity housing 1 and is attached to the inner side wall of the cavity housing 1, and the upper end part of the supporting ring is fixed with the cavity housing 1 through a snap ring 7.
The second isolation assembly is arranged on the support ring 2.
The first isolation assembly and the second isolation assembly are crossed to form a plurality of layers of drainage cavities between the first isolation assembly and the second isolation assembly, and the first isolation assembly is provided with a jacking element 8 which can move up and down to change the space size of the cavity of each layer of drainage cavity.
When the jacking element 8 drives the first isolation assembly to move upwards, the chambers of the drainage cavities at the even layers formed by the first isolation assembly and the second isolation assembly in a crossed manner are gradually reduced, and the chambers of the drainage cavities at the odd layers are gradually increased.
When the jacking element 8 drives the first isolation assembly to move upwards, the chambers of the even-layer drainage cavities formed by the first isolation assembly and the second isolation assembly in a crossed mode are gradually increased, and the chambers of the odd-layer drainage cavities are gradually reduced.
The wafer supporting device is arranged in the composite cavity structure, the device can make the wafer 19 suspend above the device by using the Bernoulli principle, and can also be used for cleaning pollutants on the lower surface of the wafer 19, especially cleaning blind areas on the lower surface of the wafer.
The wafer supporting device comprises a cleaning mechanism 20 and a jacking rotating mechanism 21 which is used for driving the cleaning mechanism 20 to move up and down and rotate in the circumferential direction.
The cleaning mechanism 20 comprises a wafer positioning component sleeved on the jacking rotation mechanism 21 and a pipe fitting shell fastened and fixed on the wafer positioning component, and a wafer adsorption pipe 20-1 and a cleaning solution delivery pipe 20-2 are arranged in the pipe fitting shell.
The wafer adsorption pipe 20-1 vertically penetrates through the jacking rotary mechanism 21 and is used for spraying air flow which enables the pressure difference to be formed between the upper surface and the lower surface of the wafer 19 so as to enable the wafer 19 to be suspended above the cleaning mechanism 20;
the cleaning liquid delivery pipe 20-2 vertically penetrates through the jacking rotating mechanism 21 and is communicated with an inclined nozzle 20-17 arranged on the pipe fitting shell, and the cleaning liquid delivery pipe 20-2 is used for delivering cleaning liquid for cleaning pollutants on the lower surface of the wafer 19.
In a first embodiment, the composite chamber structure of the single wafer cleaning apparatus in this embodiment includes a chamber housing 1, a support ring 2, a first isolation assembly and a second isolation assembly, where the first isolation assembly is provided with a jacking element 8.
Wherein the first isolation assembly comprises a first layer of isolation loops 3 and a third layer of isolation loops 5, and the second isolation assembly comprises a second layer of isolation loops 4 and a fourth layer of isolation loops 6.
The first layer of isolation ring 3 comprises a first ring body 3-1, a first isolation cover 3-2 which gradually inclines upwards from outside to inside extends from the inner wall of the first ring body 3-1, a first ring edge 3-3 horizontally extends from the outer wall of the first ring body 3-1 to the periphery, and a first clamping groove 3-4 is formed in the bottom of the first ring edge 3-3.
The second layer of isolation ring 4 comprises a second ring body 4-1, a second ring edge 4-2 horizontally extends outwards from the bottom of the second ring body 4-1, and a plurality of notches 4-3 which are uniformly distributed in the circumferential direction are formed in the joint of the second ring edge 4-2 and the second ring body 4-1.
The third layer of isolation ring 5 comprises a third ring body 5-1 and a third isolation cover 5-2 arranged at the inner side of the third ring body 5-1.
A third ring edge 5-3 fixedly connected with the jacking element 8 horizontally extends from the top of the third ring body 5-1 to the periphery, and a bulge 5-4 extends upwards from the third ring edge 5-3.
The bottom of the third ring body 5-1 is connected to the third cage 5-2 by a plurality of connectors 5-5.
The fourth layer isolation ring 6 includes a fourth ring body 6-1.
The fourth ring body 6-1 is provided with a plurality of slots 6-2 which are equidistantly distributed in the circumferential direction, and in the embodiment, the slots are arranged to be kidney-shaped holes.
An inner annular wall 6-3 which is gradually inclined downwards from inside to outside extends from the top of the outer wall of the fourth ring body 6-1, a first outer annular wall 6-4 extends from the bottom of the outer wall of the fourth ring body 6-1, the first outer annular wall 6-4 is bent upwards to form a second drainage channel 6-6, and a plurality of third drainage holes 6-7 used for discharging the cleaning liquid flowing into the channel into a third drainage channel 1-1 of the cavity shell are formed in the bottom of the second drainage channel 6-6. The bottom of the cavity shell 1 is provided with a second liquid discharge pipe 1-2, the second liquid discharge pipe 1-2 is communicated with a third drainage groove 1-1, and liquid in the third drainage groove 1-1 can be discharged to the outside of the device.
The middle part of the outer wall of the fourth ring body 6-1 extends to form a second outer ring wall 6-5 which is bent upwards, the second outer ring wall 6-5 is positioned between the inner ring wall 6-3 and the first outer ring wall 6-4, a first drainage channel 6-8 is formed between the second outer ring wall and the inner ring wall 6-3, the first drainage channel 6-8 is communicated with a first drainage pipe 6-9, and the first drainage pipe 6-9 is arranged at the bottom of the second outer ring wall 6-5 and penetrates through the first outer ring wall 6-4 and the cavity shell 1.
The support ring 2 comprises a fifth ring body 2-1.
The top of the fifth ring body 2-1 is provided with a second clamping groove 2-2 which is buckled with the clamping ring 7.
A supporting convex ring 2-3 horizontally extends from the middle part of the inner wall of the fifth ring body 2-1, the bottom of the second layer of isolation ring 4 is arranged on the supporting convex ring 2-3, and a plurality of flow guide holes 2-4 uniformly distributed in the circumferential direction are arranged on the supporting convex ring 2-3.
The lower part of the fifth ring body 2 is provided with a plurality of first drainage holes 2-5 which are uniformly distributed in the circumferential direction and correspond to the flow guide holes 2-4 positioned above the fifth ring body.
A support ring edge 2-6 is horizontally extended inwards from the bottom of the fifth ring body 2, and a plurality of second drainage holes 2-7 are formed in the support ring edge 2-6.
When the composite cavity structure is assembled, firstly, the support ring 2 is placed in the cavity housing 1, the support ring 2 is attached to the inner side wall of the cavity housing 1, and the support ring 2 and the cavity housing 1 are fixed into a whole through the snap ring 7.
Then, the second layer of isolation ring 4 is arranged on the supporting convex ring 2-3 of the supporting ring, and the supporting convex ring 2-3 supports the second layer of isolation ring 4.
Then, a third layer of isolation ring 5 is arranged between a fourth layer of isolation ring 6 and the support ring 2, a third ring body 5-1 of the third layer of isolation ring 5 vertically penetrates through the support ring 2, a bulge 5-4 at the top of the third ring body 5-1 is clamped in a first clamping groove 3-4 of the first layer of isolation ring, so that the second layer of isolation ring 4 is arranged between the first layer of isolation ring 3 and the third layer of isolation ring 5, the upper end of the third layer of isolation ring 5 is buckled with the first layer of isolation ring 3, and the first layer of isolation ring 3 and the third layer of isolation ring 5 are fixed into a whole.
Form first layer drainage chamber 9 between first layer isolation ring 3 and the second layer isolation ring 4, form second layer drainage chamber 10 between second layer isolation ring 4 and the third layer isolation ring 5, form third layer drainage chamber 11 between third layer isolation ring 5 and the fourth layer isolation ring 6.
And then, fastening and fixing a fourth layer of isolation ring 6 on a support ring edge 2-6 of the support ring, wherein a first drainage channel 6-8 and a second drainage channel 6-6 are arranged inside the fourth layer of isolation ring 6, the first drainage channel 6-8 is positioned between the inner annular wall 6-3 and the second outer annular wall 6-5, and the second drainage channel 6-6 is formed by bending the first outer annular wall 6-4 upwards.
And finally, fixing the jacking element 8 and the third ring edge 5-3 of the third layer of isolation ring, so that when the jacking element 8 is started, the jacking element 8 can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move.
In this embodiment, the jacking element 8 is a cylinder, a piston rod of the cylinder is fixed to the third ring edge 5-3 of the third isolation ring, and a cylinder barrel of the cylinder can be mounted on an equipment housing of the wafer cleaning equipment or mounted in other places.
Specifically, when the piston rod of the cylinder pushes upwards to enable the first layer isolation ring 3 and the third layer isolation ring 5 to move upwards synchronously, the size of the cavity of the first layer drainage cavity 9 and the size of the cavity of the third layer drainage cavity 11 can be gradually increased, the size of the cavity of the second layer drainage cavity 10 can be gradually decreased, when the third isolation cover 5-2 of the third layer isolation ring 5 is attached to the upper portion of the second layer isolation ring 4, the second layer drainage cavity 10 is hidden and disappears, and the cavity of the first layer drainage cavity 9 and the third layer drainage cavity 11 reaches the maximum state.
When the piston rod of the cylinder drives the first layer isolation ring 3 and the third layer isolation ring 5 to synchronously move downwards, the sizes of the chambers of the first layer drainage chamber 9 and the third layer drainage chamber 11 can be gradually reduced, the size of the chamber of the second layer drainage chamber 10 can be gradually increased, when the first isolation cover 3-2 of the first layer isolation ring 3 is attached to the upper part of the second layer isolation ring 4, and the third isolation cover 5-2 of the third layer isolation ring is attached to the second outer ring wall 6-5 of the fourth layer isolation ring, the chamber of the second layer drainage chamber 10 reaches the maximum state, and the chambers of the first layer drainage chamber 9 and the third layer drainage chamber 11 are hidden.
According to the multi-layer drainage cavity, the cleaning cavity of the wafer cleaning equipment is set to be the multi-layer drainage cavity with the adjustable cavity size, the problem that chemical cleaning liquids of different types cannot be cleaned in the cleaning cavity of the same wafer cleaning equipment in a segmented mode can be effectively solved, and the cleaning efficiency of the single wafer cleaning equipment is effectively improved.
The following specifically describes the operation process of the composite cavity structure by way of example:
when the wafer needs to be cleaned by alkaline chemical cleaning liquid, the cylinder can drive the first layer of isolation ring 3 and the third layer of isolation ring 5 to synchronously move downwards until the chambers of the first layer of drainage cavity 9 and the third layer of drainage cavity 11 are hidden and the chamber of the second layer of drainage cavity 10 reaches the maximum state, as shown in fig. 14, then the wafer height is adjusted by using a wafer supporting device of the wafer cleaning equipment, so that the wafer 19 is flush with the upper edge of the third isolation cover 5-2 or slightly higher than the upper edge of the third isolation cover 5-2, then the alkaline chemical cleaning liquid is sprayed to the upper surface of the wafer from top to bottom by using a spray pipe on the wafer cleaning equipment, flows into the second layer of drainage cavity 10 from the periphery of the wafer 19, then flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage hole 2-5 of the supporting ring, and finally is discharged to the outside of the equipment through the second drainage pipe 1-2.
When the wafer needs to be cleaned by the acidic chemical cleaning solution, the cylinder drives the first layer of isolation ring 3 and the third layer of isolation ring 5 to move upward synchronously, as shown in fig. 15, then the wafer height is adjusted by using the wafer supporting device of the wafer cleaning equipment, so that the wafer 19 is flush with or slightly higher than the upper edge of the inner ring wall 6-3 of the fourth layer of isolation ring, then the acidic chemical cleaning solution is sprayed onto the upper surface of the wafer 19 from top to bottom by using the spray pipe on the wafer cleaning equipment, flows into the first flow guide channel 6-8 from the periphery of the wafer 19, and is discharged to the outside of the equipment through the first liquid discharge pipe 6-9.
The wafer support structure of the single wafer cleaning device provided in this embodiment is disposed in the composite chamber structure.
The wafer support structure includes a cleaning mechanism 20 and a lifting and rotating mechanism 21. The wafer supporting structure and the composite cavity structure are separated by a splash guard 24, specifically, the splash guard 24 is sleeved outside the jacking rotation mechanism 21, and in this embodiment, the splash guard 24 is clamped on the upper portion of the lifting mechanism 21-2. The splash guard 24 is provided with a plurality of waist-shaped holes which are uniformly distributed in the circumferential direction. The lower edge of the splash guard 24 is downwards inclined and slightly extends into the third drainage channel 1-1, a spray ring 25 is fixed on the upper portion of the splash guard 24, a plurality of inclined spray heads 25-1 which are uniformly distributed in the circumferential direction are installed at the top of the spray ring 25, the spray ring 25 is connected with a nanometer small molecular water generator through a water supply pipe, clear water can be conveyed into the spray ring 25 through the nanometer small molecular water generator, and water is sprayed into the composite cavity structure through the inclined spray heads 25-1 on the spray ring 25 so as to clean chemical cleaning liquid remained in the composite cavity structure.
The lifting and rotating mechanism 21 can drive the cleaning mechanism 20 to move up and down and can rotate the cleaning mechanism 20 in the circumferential direction.
The jacking and rotating mechanism 21 comprises a motor 21-1 and a lifting mechanism 21-2, the motor 21-1 is fixed on the lifting mechanism 21-2, and the cleaning mechanism 20 is sleeved on a rotating shaft assembly (the rotating shaft assembly comprises a rotating shaft 21-3 and a rotating bearing 21-4) of the motor 21-1. The lifting mechanism 21-2 is used for driving the motor and the cleaning mechanism 20 fixed on the motor 21-1 to move up and down, and the motor 21-1 can drive the cleaning mechanism 20 to rotate in the circumferential direction. In this embodiment, the motor 21-1 is a hollow servo motor.
The cleaning mechanism 20 comprises a wafer positioning component and a pipe shell fastened and fixed on the wafer positioning component, a wafer adsorption tube 20-1 and a cleaning solution delivery tube 20-2 are arranged in the pipe shell, the wafer adsorption tube 20-1 is used for spraying air flow which enables the upper surface and the lower surface of the wafer 19 to form pressure difference, so that the wafer 19 is suspended above the cleaning mechanism 20, and the cleaning solution delivery tube 20-2 is used for delivering cleaning solution for cleaning pollutants 22 on the lower surface of the wafer 19.
The wafer positioning assembly includes a first wafer positioner 20-3, a second wafer positioner 20-4, and a third wafer positioner 20-5.
The first wafer positioner 20-3 and the second wafer positioner 20-4 are sleeved on the jacking rotation mechanism 21. Specifically, the first wafer positioner 20-3 is sleeved on a rotating shaft of the motor 21-1, the rotating bearing 21-4 is sleeved at the end of the rotating shaft 21-3 of the motor 21-1, and the second wafer positioner 20-4 is sleeved on the rotating bearing 21-4. The third wafer positioner 20-5 is respectively fastened and fixed with the first wafer positioner 20-3 and the second wafer positioner 20-4, and a plurality of supporting seats 20-6 are installed at the top of the third wafer positioner 20-5.
The bottom of the third wafer positioner 20-5 is provided with a third fixing groove 20-9 for fastening the second wafer positioner 20-3, and the bottom thereof extends downwards to form an annular protrusion 20-11, when the first wafer positioner 20-3 is sleeved on the rotating shaft 21-3 of the motor, the side edge of the first wafer positioner 20-3 is just abutted against the annular protrusion 20-11.
The top of the third circular positioner 20-5 is opened with a plurality of first fixing grooves 20-7 for mounting the supporting seat 20-6 and second fixing grooves 20-8 for fastening the pipe casing.
The pipe fitting shell comprises a pipe fitting lower shell 20-12, a pipe fitting upper shell 20-13 buckled with the pipe fitting lower shell 20-12, and a fixing piece 20-14 vertically penetrating the pipe fitting upper shell 20-13.
The pipe lower case 20-12 is caught in the second fixing groove 20-8 of the third wafer positioner 20-5.
A fourth fixing groove 20-10 which vertically penetrates is formed in the center of the outer shell 20-13 on the pipe fitting, and a fixing piece 20-14 is arranged in the fourth fixing groove 20-10. The lower part of the upper shell 20-13 of the pipe fitting is provided with a buckling groove 20-15, and the lower shell 20-12 of the pipe fitting is buckled with the upper shell 20-13 of the pipe fitting through the buckling groove 20-15. When the upper shell 20-13 is fastened to the lower shell 20-12, a small gap 20-16 exists between the fastening portion of the upper shell 20-13 and the lower shell 20-12.
The upper part of the pipe upper shell 20-13 is horizontally provided with a plurality of inclined nozzles 20-17. In this embodiment, the outer surface of the upper part of the outer shell 20-13 on the pipe fitting is a downward inclined arc surface.
The center of the fixing member 20-14 is provided with a fifth fixing groove 20-15 which vertically penetrates through the fixing member, and the wafer adsorption tube 20-1 is inserted into the fifth fixing groove 20-15, and the lower end of the wafer adsorption tube vertically penetrates through the whole jacking and rotating mechanism 21 so as to be connected with an air supply device outside the device.
A plurality of sixth fixing grooves 20-16 are formed in the periphery of the fifth fixing groove 20-15, the plurality of sixth fixing grooves 20-16 are evenly distributed in the periphery of the fifth fixing groove 20-15, a cleaning liquid conveying pipe 20-2 is inserted into each sixth fixing groove 20-16, the number of the cleaning liquid conveying pipes 20-2 is equal to the number of the inclined nozzles 20-17 in the shell 20-13 of the pipe fitting, and therefore one cleaning liquid conveying pipe 20-2 corresponds to only one inclined nozzle 20-17. The cleaning solution delivery pipe 20-2 at different positions can be used to deliver cleaning solutions of different concentrations or different kinds, such as acidic cleaning solutions or alkaline cleaning solutions. In this embodiment, the sixth fixing groove 20-16 is an L-shaped groove, so that when the cleaning solution delivery pipe 20-2 is inserted into the sixth fixing groove 20-16, the cleaning solution delivery pipe 20-2 is also L-shaped, a horizontal section of the L-shaped cleaning solution delivery pipe 20-2 is communicated with the inclined nozzle 20-17 inside the upper shell 20-13 of the pipe fitting, and a vertical section of the L-shaped cleaning solution delivery pipe 20-2 passes through the whole jacking and rotating mechanism 21 to be connected with a liquid supply system in the semiconductor wet process.
The working principle of the wafer support structure is as follows:
the gas is supplied into the wafer adsorption tube 20-1 by the gas supply device. Since the air flow for forming a pressure difference between the upper surface and the lower surface of the wafer 19 is ejected in the wafer adsorption tube 20-1, when the wafer 19 is placed on the wafer support structure, the wafer 19 floats/floats on the plurality of supports 20-6, and the wafer 19 does not contact the supports 20-6.
The motor 21-1 of the lifting and rotating mechanism can drive the whole cleaning mechanism 20 to rotate in the circumferential direction, and during the rotation of the cleaning mechanism 20, a rotating airflow is formed on the lower surface of the wafer 19, and the rotating circulation of the airflow can carry away part of pollutants on the lower surface of the wafer 19.
In order to enhance the stability of the vacuum environment formed by the airflow ejected from the wafer adsorption tube 20-1 on the lower surface of the wafer and enhance the capability of the airflow to entrain pollutants, a gas jet tube may be disposed in the hollow chamber of the motor 21-1, and the gas ejected from the gas jet tube will not damage the bernoulli principle. When the gas jet pipe is installed, the gas jet pipe penetrates through the hollow of the motor 21-1 and is communicated with the gap 20-16 between the buckling parts of the upper pipe shell 20-13 and the lower pipe shell 20-12, the gas jet pipe can jet out from the gap between the upper end face of the lower pipe shell 20-12 and the lower pipe shell 20-13 along the gap 20-16 and the buckling grooves 20-15, and therefore the stability of a vacuum environment and the capability of carrying particles of the gas flow are enhanced, the flow path of the gas flow jetted by the gas jet pipe is shown in the figure 20, and the gas jet pipe is not shown in the figure 20. In this embodiment, nitrogen gas is injected from the gas injection pipe.
An acid or alkaline cleaning solution can be conveyed into the cleaning solution conveying pipe 20-2 through a liquid supply system in the semiconductor wet process, and the cleaning solution is conveyed into the inclined nozzle 20-17 through the cleaning solution conveying pipe 20-2 and is sprayed out from a nozzle opening of the inclined nozzle 20-17. Because the whole cleaning mechanism 20 rotates in the circumferential direction, when the cleaning solution is sprayed out from the inclined nozzles 20-17, CDA jet flow is formed, and under the action of centrifugal force, the cleaning solution can clean the residual pollutants on the lower surface of the wafer 19, and the cleaning solution mixed with the pollutants flows into the corresponding drainage cavities of the composite cavity structure of the single wafer cleaning equipment and is discharged to the outside from the corresponding drainage pipes of the single wafer cleaning equipment.
Meanwhile, after the cleaning operation is finished, the cleaning liquid remained on the lower surface of the wafer 19 can be blown off from the wafer by the air flow sprayed from the wafer adsorption tube 20-1.
The wafer supporting structure of the wafer cleaning apparatus according to this embodiment can completely clean the contaminants on the lower surface of the wafer 19 by suspending the wafer 19 above the apparatus using the bernoulli principle, and especially can clean the dead zone of the wafer 19.
By arranging the wafer adsorption pipe 20-1 and the cleaning liquid conveying pipe 20-2 in the pipe shell, partial pollutants on the lower surface of the wafer 19 can be carried away by the airflow which is sprayed by the wafer adsorption pipe 20-1 and can suspend the wafer 19, and the cleaning liquid which is conveyed to the inclined nozzle 20-17 by the cleaning liquid conveying pipe 20-2 can thoroughly clean the lower surface of the wafer 19, so that the cleaning effect is improved, the cleaning efficiency is improved, the consumption of the cleaning liquid can be reduced, and the production cost of enterprises can be reduced.
At present, only a spray pipe 23 for spraying cleaning liquid from top to bottom is arranged on wafer cleaning equipment, the traditional design can only clean the upper surface of a wafer 19, and in the cleaning process, the cleaned particle pollutants are easy to accumulate on the periphery of the wafer 19 under the action of centrifugal force, and the particle pollutants accumulated on the periphery of the wafer 19 can be adhered to the back of the wafer 19 under the influence of a flow field at the bottom of the wafer 19. This application can carry out abluent wafer bearing structure to the wafer lower surface through the installation on wafer cleaning equipment, can effectively solve this problem, in the single cleaning operation in-process, the wafer cleaning equipment who installs this application device can not only wash 19 surfaces and the back of wafer simultaneously, can not cause the problem that particle pollutant is at 19 peripheral accumulations of wafer, wafer cleaning equipment's clean ability has been improved greatly, cleaning efficiency and cleaning performance have been improved, the wafer quality has been guaranteed effectively.
The working process of the wafer cleaning apparatus in this embodiment is as follows:
1. and supplying gas into the wafer adsorption pipe 20-1 of the wafer support structure through the gas supply equipment.
The wafer 19 is transferred to the chamber by the wafer chuck and placed on the wafer support structure, and the wafer 19 floats/floats on the support base 20-6 because the air flow for forming a pressure difference between the upper surface and the lower surface of the wafer 19 is ejected from the wafer adsorption tube 20-1, and the wafer 19 does not contact the support base 20-6. And a cabin door is arranged on the working cabin, and when the wafer is fed into the working cabin, the cabin door is closed, and the working cavity is in a sealed state.
2. And according to the current working mode, the size of the cavity of each layer of drainage cavity in the composite cavity structure is adjusted by using the jacking element, so that the wafer corresponds to a certain layer of drainage cavity. Taking the example of cleaning the wafer with the alkaline chemical cleaning solution, the jacking element should drive the first isolation assembly to move downward to maximize the chamber of the second layer of drainage cavity 10, and if the wafer 19 is not flush with the upper edge of the third isolation cover 5-2 or is not slightly higher than the upper edge of the third isolation cover 5-2, the height of the wafer is slightly adjusted by the lifting mechanism of the jacking rotation mechanism.
3. The motor 21-1 of the jacking rotation mechanism drives the whole cleaning mechanism 20 to rotate in the circumferential direction, and in the rotation process of the cleaning mechanism 20, the lower surface of the wafer 19 forms a rotating air flow, and the air flow can carry away part of pollutants on the lower surface of the wafer 1 in a rotating cycle.
Meanwhile, nitrogen can be introduced into a gap 20-16 between the buckling parts of the upper pipe shell 20-13 and the lower pipe shell 20-12 through the gas jet pipe, and flows out from the gap between the upper end face of the lower pipe shell 20-12 and the lower pipe shell 20-13, so that the stability of a vacuum environment formed by the airflow jetted from the wafer adsorption pipe 20-1 on the lower surface of the wafer and the capability of the airflow carrying particle pollutants can be enhanced. The nitrogen sprayed by the gas jet pipe and the gas sprayed by the wafer adsorption pipe 20-1 can enter the current working drainage cavity, namely the second layer of drainage cavity 10.
4. And spraying alkaline chemical cleaning solution to the upper surface of the wafer from top to bottom by using a spray pipe, wherein the alkaline chemical cleaning solution diffuses from the periphery of the wafer 19 and flows into the second-layer drainage cavity 10. Specifically, according to the current working mode, the spray pipes in the area A, the area B, the area C or the area D can be adopted to spray cleaning liquid on the upper surface of the wafer, or a plurality of spray pipes can be adopted to alternatively spray. Under different working modes, the spraying operation modes of the plurality of spraying pipes are different, and detailed description is omitted here.
Meanwhile, alkaline chemical cleaning liquid is conveyed into the cleaning liquid conveying pipe 20-2 through a liquid supply system in the semiconductor wet process, and the cleaning liquid is conveyed into the inclined nozzle 2-17 through the cleaning liquid conveying pipe 20-2 and is sprayed out from a nozzle opening of the inclined nozzle 20-17. Since the whole cleaning mechanism 20 rotates in the circumferential direction, when the cleaning liquid is sprayed from the inclined nozzles 20-17, a CDA jet is formed, and under the action of centrifugal force, the cleaning liquid can clean the residual contaminants on the lower surface of the wafer 19, and the cleaning liquid with the contaminants flows into the second-layer drainage chamber 10.
The alkaline chemical cleaning solution entering the second layer of drainage cavity 10 flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage holes 2-5 of the support ring, and is finally discharged to the outside of the equipment through the second liquid discharge pipe 1-2.
5. After the cleaning is finished, the spraying of the liquid is stopped by the spraying pipe and the inclined nozzles 2-17 of the cleaning liquid conveying pipe 20-2. The residual cleaning liquid on the lower surface of the wafer 19 can be blown off from the wafer by the air flow jetted from the wafer adsorption tube 2-1 and the gas jet tube.
The residual cleaning solution separated from the wafer can also flow into the third drainage channel 1-1 of the cavity shell from the second layer of drainage cavity 10 and the first drainage hole 2-5 of the support ring, and finally is discharged to the outside of the equipment through the second liquid discharge pipe 1-2.
6. And a fan filtering unit at the top of the working cabin blows purified gas downwards, and the purified gas enters a composite cavity structure of the wafer cleaning equipment.
Meanwhile, the air extractor 12 of the wafer cleaning equipment is started, the air extractor 12 extracts the air in the composite cavity structure, air blowing and air extracting circulation is formed, waste gas in the composite cavity structure can be extracted while the wafer is dried, and the drying effect of the equipment is improved.
The flow path of the gas in the composite cavity structure is shown by the arrows in fig. 25, that is, the waste gas is collected downwards from each layer of drainage cavity into the third drainage channel 1-1 of the cavity housing 1, then bypasses the lower edge of the splash guard 24, enters the gap between the cavity housing 1 and the lifting mechanism 21-2, then enters the suction pipe of the suction device 12 along the gap between the cavity housing 1 and the lifting mechanism 21-2, and is discharged to the outside of the apparatus from the suction pipe. Waste gas in the composite cavity structure can directly enter a gap between the cavity shell 1 and the lifting mechanism 21-2 through the slotted hole 6-2 on the fourth layer of isolation ring 6 and the waist-shaped hole on the splash guard 24, and is finally exhausted to the outside of the equipment from an exhaust pipe of the exhaust device 12.
7. After drying, the jacking rotating mechanism stops rotating, and the wafer is transferred to the next procedure through the wafer clamping device, so that the cleaning of one wafer is completed.
In the second embodiment, the structure of the wet cleaning apparatus for a highly clean wafer in this embodiment is substantially the same as that of the first embodiment, and specifically, a conduit groove 13 is further formed inside the second layer of isolation ring 4, the third layer of isolation ring 5, and the fourth layer of isolation ring 6 of the composite chamber structure of the wafer cleaning apparatus in this embodiment.
The catheter groove on the second layer of isolation ring 4 is communicated with the first layer of drainage cavity 9, the catheter groove on the third layer of isolation ring 5 is communicated with the second layer of drainage cavity 10, and the catheter groove on the fourth layer of isolation ring 6 is communicated with the third layer of drainage cavity 11.
The conduit groove on the second layer of isolation collar 4 is disposed within its second collar body 4-1.
The conduit groove on the third layer of isolation ring 5 is arranged in the third isolation cover 5-2 thereof.
The duct channels in the fourth layer of isolating collar 6 are provided in its inner annular wall 6-3 and second outer annular wall 6-5, respectively.
The conduit grooves in the second layer of isolation ring 4, the third layer of isolation ring 5 and the fourth layer of isolation ring 6 are all connected with a nanometer small molecule water generator 17 through a water supply pipe 16. The nano small molecule water generator 17 is used for filtering water, and sending the filtered water to a corresponding catheter groove through a water supply pipe 16 to clean chemical cleaning liquid remained in each drainage cavity.
Preferably, the upper surfaces of the second layer of isolation ring 4, the third layer of isolation ring 5 and the fourth layer of isolation ring 6 are further provided with a spray plate 14 covering the conduit groove, and the spray plate 14 is provided with a plurality of water spray holes 14-1 arranged in an array.
After the wafer cleaning operation is finished, the filtered water can be sent to the conduit groove 13 and the spray ring 25 of each layer of isolation ring through the water supply pipe 16 by the nano small molecule water generator 17, and then the water is sprayed into each drainage cavity through the spray plate on the surface of the conduit groove 13 and the inclined spray head 25-1 on the surface of the spray ring 25 to clean the chemical cleaning liquid remained in each drainage cavity, as shown in fig. 3 and 16.
Specifically, the water delivered to the conduit grooves of the second isolation ring 4 is sprayed to the lower surface of the first isolation ring 3 through the spray plate on the surface of the first isolation ring, and the sewage mixed with the residual chemical cleaning solution enters the first drainage cavity 9 and then flows into the third drainage channel 1-1 of the cavity shell through the first drainage cavity 9, the flow guide holes 2-4 of the support ring and the first drainage holes 2-5.
The water conveyed to the conduit groove of the third layer of isolation ring 5 is sprayed to the lower surface of the second layer of isolation ring 4 through the spraying plate on the surface of the conduit groove, and the sewage mixed with the residual chemical cleaning solution enters the second layer of drainage cavity 10 and then flows into the third drainage channel 1-1 of the cavity shell through the second layer of drainage cavity 10 and the first drainage holes 2-5 of the supporting ring.
The water conveyed to the conduit groove in the second outer ring wall 6-5 of the fourth layer of isolation ring 6 is sprayed to the lower surface of the third layer of isolation ring 5 through the spraying plate on the surface of the water, the sewage mixed with the residual chemical cleaning solution enters the third layer of drainage cavity 11, and then flows into the third drainage channel 1-1 of the cavity shell through the third layer of drainage cavity 11, the first drainage holes 2-5 of the supporting ring, the second drainage channel 6-6 and the third drainage holes 6-7 at the bottom of the second drainage channel 6-6.
The sewage flowing into the third drainage channel 1-1 is discharged to the outside of the equipment through the second sewage discharge pipe 1-2.
The water delivered to the conduit groove in the inner annular wall 6-3 of the fourth layer of isolation ring 6 is sprayed to the lower surface of the second outer annular wall 6-5 through the spraying plate on the surface of the water, and the sewage mixed with residual chemical cleaning liquid enters the first drainage channel 6-8 and is discharged to the outside of the equipment through the first drainage pipe 6-9.
The water conveyed into the spray ring 25 can be sprayed into a gap between the splash guard and the composite cavity structure so as to clean chemical liquid remained on the cleaning blind areas of the isolation rings of all layers.
In this embodiment, other specific embodiments are the same as the first embodiment, and are not described herein again in detail.
In the third embodiment, the structure of the composite chamber for a wafer cleaning apparatus in this embodiment is substantially the same as that of the first or second embodiment, and specifically, the difference is that the lower surfaces of the first, second, third and fourth isolation rings 3, 4, 5 and 6 are respectively provided with a sputtering-proof plate 15.
In this embodiment, other specific embodiments are the same as the first embodiment or the second embodiment, and are not described herein again in detail.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (9)

1. A high-cleanness wafer wet cleaning device is characterized by comprising a working cabin and wafer cleaning equipment arranged in the working cabin;
a fan filtering unit used for blowing pure gas to the wafer cleaning equipment is arranged on the working cabin;
the wafer cleaning equipment comprises an equipment shell, a composite cavity structure arranged in the equipment shell and a wafer supporting structure arranged in the composite cavity structure;
the equipment comprises an equipment shell, a composite cavity structure and a liquid cleaning pipeline, wherein the equipment shell is provided with an air extracting device communicated with the composite cavity structure and used for extracting waste gas in the composite cavity structure and at least one spray pipe used for spraying cleaning liquid or gas to the surface of a wafer, one spray pipe is a nanoscale spray pipe, the nanoscale spray pipe is provided with a liquid cleaning nozzle connected with the liquid cleaning pipeline, an atomization cleaning nozzle connected with the atomization cleaning pipeline, a nitrogen nozzle connected with a nitrogen gas supply pipeline and an ultrasonic oscillation sheet, the atomization cleaning nozzle is connected with the ultrasonic oscillation sheet, the ultrasonic oscillation sheet is connected with an external power supply, and the nitrogen nozzle faces the atomization cleaning nozzle;
the wafer supporting structure is used for enabling the wafer to be suspended above the wafer supporting structure and spraying cleaning liquid to the back of the wafer;
the wafer supporting structure comprises a cleaning mechanism and a jacking rotating mechanism which is used for driving the cleaning mechanism to move up and down and rotate in the circumferential direction,
the cleaning mechanism comprises a wafer positioning component sleeved on the jacking rotating mechanism and a pipe fitting shell buckled and fixed on the wafer positioning component, a wafer adsorption pipe and a cleaning liquid conveying pipe are arranged in the pipe fitting shell,
the wafer adsorption pipe vertically penetrates through the jacking rotating mechanism and is used for spraying air flow which enables the upper surface and the lower surface of the wafer to form pressure difference so as to enable the wafer to be suspended above the cleaning mechanism;
the cleaning solution conveying pipe vertically penetrates through the jacking rotating mechanism and is communicated with an inclined nozzle arranged on the pipe fitting shell, and the cleaning solution conveying pipe is used for conveying cleaning solution for cleaning pollutants on the lower surface of the wafer;
the composite cavity structure is internally provided with a plurality of layers of drainage cavities with adjustable cavity sizes, and is used for enabling cleaning liquid on the surface and the back of the wafer to flow to the outside of the equipment from the corresponding drainage cavities in different working modes.
2. The high-cleanness wafer wet cleaning device according to claim 1, wherein the composite chamber structure comprises:
a cavity housing;
a support ring which is attached to the inner side wall of the cavity shell and the upper end of which is fixed with the cavity shell through a snap ring;
a second isolation assembly disposed on the support collar;
and the first isolating component is crossed with the second isolating component so as to form a plurality of layers of drainage cavities between the first isolating component and the second isolating component, and the first isolating component is provided with a jacking element which can move up and down so as to change the cavity space size of each layer of drainage cavity.
3. The high-cleanliness wafer wet cleaning device according to claim 2, wherein the first isolation assembly comprises a first layer of isolation rings and a third layer of isolation rings, the second isolation assembly comprises a second layer of isolation rings and a fourth layer of isolation rings,
the first layer of isolation ring is buckled with the third layer of isolation ring;
the second layer of isolation ring is arranged between the first layer of isolation ring and the third layer of isolation ring, the bottom of the second layer of isolation ring is supported on the support ring, a first layer of drainage cavity is formed between the first layer of isolation ring and the second layer of isolation ring, and a second layer of drainage cavity is formed between the second layer of isolation ring and the third layer of isolation ring;
the third layer of isolation ring is arranged between the fourth layer of isolation ring and the support ring, and a third layer of drainage cavity is formed between the third layer of isolation ring and the fourth layer of isolation ring;
the fourth layer of isolation ring is fastened and fixed on the inner edge of the support ring, and a first drainage channel is arranged in the fourth layer of isolation ring.
4. The high-cleanness wafer wet cleaning device according to claim 3, wherein the lower surfaces of the first layer of isolation ring, the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are provided with a splash shield.
5. The high-cleanness wafer wet cleaning device according to claim 3 or 4, wherein conduit grooves are formed in the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring, the conduit groove in the second layer of isolation ring is communicated with the first layer of drainage cavity, the conduit groove in the third layer of isolation ring is communicated with the second layer of drainage cavity, and the conduit groove in the fourth layer of isolation ring is communicated with the third layer of drainage cavity.
6. The wet cleaning device for high-cleanliness wafers as claimed in claim 5, wherein the upper surfaces of the second layer of isolation ring, the third layer of isolation ring and the fourth layer of isolation ring are further provided with a spray plate covering the conduit groove, and the spray plate is provided with a plurality of water spray holes arranged in an array.
7. The apparatus as claimed in claim 1, wherein the wafer positioning assembly includes a first wafer positioner, a second wafer positioner and a third wafer positioner, the first wafer positioner and the second wafer positioner are both disposed on the lifting/rotating mechanism, the third wafer positioner is respectively fastened to the first wafer positioner and the second wafer positioner, and a plurality of supporting seats are installed on the top of the third wafer positioner.
8. The high-cleanness wafer wet cleaning device according to claim 7, wherein the lifting and rotating mechanism comprises a motor and a lifting mechanism, the motor is fixed on the lifting mechanism, the first wafer positioner is sleeved on a rotating shaft of the motor, a rotating bearing is sleeved on an end portion of the rotating shaft of the motor, and the second wafer positioner is sleeved outside the rotating bearing.
9. The wet cleaning apparatus for highly cleaned wafers as claimed in claim 1, wherein the tube housing comprises a lower tube housing, an upper tube housing engaged with the lower tube housing, and a fixing member vertically passing through the upper tube housing, the wafer suction tube and the cleaning solution delivery tube are fixed in the fixing member and vertically pass through the lifting and rotating mechanism.
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