CN112740387A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN112740387A
CN112740387A CN201980060603.1A CN201980060603A CN112740387A CN 112740387 A CN112740387 A CN 112740387A CN 201980060603 A CN201980060603 A CN 201980060603A CN 112740387 A CN112740387 A CN 112740387A
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CN
China
Prior art keywords
bellows
chamber
support rod
base
exhaust passage
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Pending
Application number
CN201980060603.1A
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Chinese (zh)
Inventor
韩赈洙
金洙千
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TES Co Ltd
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TES Co Ltd
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Priority claimed from KR1020180130385A external-priority patent/KR102119396B1/en
Priority claimed from KR1020180146501A external-priority patent/KR102121799B1/en
Application filed by TES Co Ltd filed Critical TES Co Ltd
Publication of CN112740387A publication Critical patent/CN112740387A/en
Pending legal-status Critical Current

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L11/00Hoses, i.e. flexible pipes
    • F16L11/04Hoses, i.e. flexible pipes made of rubber or flexible plastics
    • F16L11/11Hoses, i.e. flexible pipes made of rubber or flexible plastics with corrugated wall
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of reducing powder accumulation inside a bellows connected to a bottom surface of a chamber and particles attached to a thin film due to scattering of the powder when a susceptor moves up and down.

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of reducing powder accumulation inside a bellows connected to a bottom surface of a chamber and particles attached to a thin film due to scattering of the powder when a susceptor moves up and down.
Background
Generally, a substrate processing apparatus includes a susceptor disposed inside a chamber to support a substrate and moving up and down, and a gas supply unit to supply a process gas or the like toward the substrate.
When a thin film is deposited on a substrate, particles (particles) or the like adhere to the substrate, which causes a significant decrease in the quality of the thin film. Therefore, in order to remove powder or the like that may cause the generation of the particles, an exhaust portion for exhausting gas or powder inside the chamber is provided.
However, some of the components connected to the inside of the chamber or the chamber may have a structure in which it is difficult to discharge foreign matter such as powder by the exhaust unit. In particular, if powder or the like is deposited inside a bellows structure connected to a drive rod for moving the base up and down, it is very difficult to remove the powder, residual gas, and the like by the exhaust unit provided in the related art.
Fig. 18 is a sectional view corresponding to a bellows structure and an exhaust passage in a substrate processing apparatus according to the related art. Fig. 18 shows a base support rod 32 extending downward from the bottom surface of the base 10, a bellows 33 arranged so as to surround the base support rod 32 and maintain a vacuum state, and an exhaust passage 40.
Referring to fig. 18, the base support rod 32 protrudes downward through the through hole 24 of the chamber 12, and the through hole 24 is sealed by the bellows 33 to maintain the inside vacuum state.
In this case, powder or the like that may be generated in the process of processing the substrate W may flow into the bellows 33 through the gap between the edge of the through hole 24 and the outer surface of the susceptor support rod 32.
In particular, as shown in fig. 18, the exhaust passage 40 of the chamber 12 is connected to one side obliquely rather than to the central portion. Since, when the exhaust passage or the like is directly connected to the bellows 33 due to the bellows 33 being contracted and expanded up and down, a bending load is continuously applied to the exhaust passage, the exhaust passage is easily broken or damaged. In addition, various fluid ducts for temperature adjustment of the susceptor 10, various electric wires such as cables, and the like are connected to the susceptor support rod 32 of the susceptor 10 in the base center portion of the chamber 12, and therefore it is difficult to connect the exhaust passage to the base center portion of the chamber 12.
In this case, the powder P and the like flowing into the bellows 33 are accumulated below the inside of the bellows 33. At this time, the gas inside the chamber 12 is exhausted through the exhaust part 40 disposed apart from the base center part of the chamber 12, and when the elevating plate 34 moves up and down and the bellows 33 expands and contracts, the foreign substances P accumulated inside the bellows 33 are scattered and may be diffused into the chamber through the through hole 12.
With such a configuration, when the gas inside the chamber 12 is discharged through the gas discharge passage 40, the powder or the like accumulated inside the bellows 22 may be scattered again and flow into the inside of the chamber 12.
In this way, the powder or the like flowing into the chamber 12 acts as particles on the thin film deposited on the substrate W, and the quality of the thin film is degraded.
On the other hand, fig. 19 shows a structure below the chamber 12 including the susceptor 10 in the substrate processing apparatus according to the related art for processing a large-area substrate W.
As shown in fig. 19, if a large-area base is supported by the base support rod 32 located on the bottom surface of the central portion of the base 10, a region or an edge region spaced from the central portion of the base 10 may droop downward. In this case, the distance between the substrate W mounted on the susceptor 10 and the gas supply portion may vary, and the quality of a thin film deposited on the substrate W may be degraded.
In this case, a base auxiliary support portion supporting the bottom surface of the base 10 may be provided. The base auxiliary support portion may include, for example, a plurality of base auxiliary support rods 40 and 42 that support the bottom surface of the base 10, and a lift plate 60 that is connected to the lower ends of the base auxiliary support rods 40 and 42 and moves up and down.
At this time, bellows 52 and 54 are provided outside the base auxiliary support rods 40 and 42, and are sealed to maintain the vacuum state inside the chamber 12.
On the other hand, when a thin film is deposited on a substrate, particles (particles) or the like adhere to the substrate, which causes a significant decrease in the quality of the thin film. Therefore, in order to remove powder or the like that may cause the generation of the particles, an exhaust part 50 for exhausting gas or powder inside the chamber is provided.
However, some of the components connected to the inside of the chamber 12 or the chamber may have a structure in which it is difficult to discharge foreign matter such as powder by the exhaust portion 50.
That is, powder or the like that may be generated in the process of processing the substrate W may flow into the bellows 52, 54 through the gap between the edge of the through hole 16 and the outer surface of the susceptor auxiliary support rods 40, 42.
In this case, the powder P and the like flowing inside the bellows 52, 54 are accumulated below the inside of the bellows 52, 54. At this time, when the elevating plate 60 moves up and down and the bellows 52 and 54 expand and contract, the foreign substances P accumulated inside the bellows 52 and 54 are scattered and may be diffused into the chamber 12 through the through hole 16.
In the case of such a configuration, when the gas inside the chamber is discharged through the gas discharge portion 50 connected to the chamber, the powder and the like accumulated inside the bellows 52 and 54 may be scattered again and flow into the inside of the chamber.
In this way, the powder or the like flowing into the chamber 12 acts as particles on the thin film deposited on the substrate W, and the quality of the thin film is degraded.
Disclosure of Invention
In order to solve the above-described problems, an object of the present invention is to provide a substrate processing apparatus capable of reducing particles adhering to a thin film due to scattering of powder when a susceptor moves up and down while powder or the like accumulates inside a bellows connected to a bottom surface of a chamber.
As described above, the object of the present invention is achieved by a substrate processing apparatus, comprising: a chamber accommodating a substrate and providing a processing space for the substrate; at least one support rod which penetrates at least one through hole formed on the bottom surface of the chamber and moves up and down; a bellows unit surrounding the support rod at an outer side of the chamber and sealing the chamber; and at least one bellows exhaust passage connected to the bellows unit and discharging gas.
Here, the support bar may be formed of at least one of a base support bar penetrating a first through hole formed in a bottom surface of the chamber and connected to a base supporting the substrate, a base auxiliary support bar penetrating a second through hole formed in the bottom surface of the chamber and supporting the base, and a mask support bar supporting a mask placed above the substrate and penetrating a third through hole formed in the bottom surface of the chamber.
In this case, when the support rod is constituted by the base support rod, the bellows unit may be constituted by a first bellows unit that surrounds the base support rod and seals the chamber, and the bellows exhaust passage may be constituted by a first bellows exhaust passage that exhausts gas from the first bellows unit, and the first bellows unit may include: a first bellows surrounding the base support rod and sealing the chamber; and a first lifting plate connected to a lower end of the first bellows and a lower end of the base support rod and moving up and down.
Further, the first bellows unit may further include: and a first fixing portion extending downward at an outer side of the first through hole, wherein the first bellows is connected to a lower end portion of the first fixing portion, and the first bellows exhaust passage is connected to the first fixing portion.
On the other hand, the first bellows unit may further include: a second bellows connected to a bottom surface of the first lifting plate; and a first auxiliary plate connected to a lower end portion of the second bellows and supported by a first support rod connected to a lower portion of the chamber.
In this case, the first bellows unit may further include: a second fixing portion connecting a lower end portion of the second bellows and the first auxiliary plate; and at least one second bellows exhaust passage connected to the second fixing portion and exhausting gas, and a first communication hole communicating the first bellows and the second bellows is formed at the first elevating plate.
Further, the first bellows unit may further include: and a third bellows that connects the first elevating plate and the first auxiliary plate to each other inside the second bellows, wherein at least one fluid line or at least one electric wire for adjusting the temperature of the susceptor passes through the third bellows from a lower end of the susceptor support rod, penetrates through the first auxiliary plate, and extends downward.
On the other hand, when the support rod is constituted by the base auxiliary support rod, the bellows unit may be constituted by a second bellows unit that surrounds the base auxiliary support rod and seals the chamber, the bellows exhaust passage may be constituted by a third bellows exhaust passage that exhausts gas from the second bellows unit, and the second bellows unit may include: a fourth bellows surrounding the base auxiliary support rod and sealing the chamber; and a second lifting plate connected to a lower end of the fourth bellows and a lower end of the auxiliary base support rod and moving up and down.
In this case, the second bellows unit may further include: and a third fixing portion extending downward outside the second through hole, wherein the fourth bellows is connected to a lower end portion of the third fixing portion, and the third bellows exhaust passage is connected to the third fixing portion.
Further, the second bellows unit may further include: a fifth bellows connected to a bottom surface of the second lifting plate; and a second auxiliary plate connected to a lower end portion of the fifth bellows and supported by a second support rod connected to a lower portion of the chamber.
In this case, the second bellows unit may further include: a fourth fixing portion connecting a lower end portion of the fifth bellows and the second auxiliary plate; and at least one fourth bellows exhaust passage connected to the fourth fixing portion and discharging gas, and a second communication hole formed in the second elevating plate to communicate the fourth bellows with the fifth bellows.
In addition, when the support rod is formed of the mask support rod, the substrate processing apparatus may further include: a third bellows unit surrounding the mask support bar at an outer side of the chamber and sealing the chamber; and at least one fifth bellows exhaust passage connected to the third bellows unit and discharging gas.
According to the present invention having the foregoing structure, the powder inside the bellows connected to the bottom surface of the chamber can be removed, and the powder can be prevented from scattering to cause particles to adhere to the film when the base or the mask moves up and down.
In addition, according to the present invention, when the bellows exhaust passage is connected, the bellows exhaust passage is connected with the fixing portion extended from the bottom surface of the chamber to be immovably fixed, so that it is possible to extend the life of the bellows exhaust passage and reduce damage and breakage.
Drawings
FIG. 1 is a side sectional view showing an internal structure of a substrate processing apparatus according to an embodiment of the present invention,
figure 2 is a perspective view showing the fixing portion and the bellows in figure 1,
figure 3 is a side cross-sectional view showing exhaust flow inside the bellows of figure 2,
FIG. 4 is a side sectional view showing a substrate processing apparatus according to another embodiment,
figure 5 is a perspective view showing the fixing portion and the bellows in figure 4,
figure 6 is a plan view showing the lifter plate,
figure 7 is a side sectional view showing the exhaust flow inside the bellows in the structure according to figure 4,
FIG. 8 is a side sectional view showing exhaust gas flow inside a bellows in a substrate processing apparatus according to another embodiment,
FIG. 9 is a side sectional view showing the structure of a substrate processing apparatus according to another embodiment,
figure 10 is a perspective view showing the fixing portion and the bellows in figure 9,
figure 11 is a side cross-sectional view showing exhaust flow inside the bellows of figure 9,
FIG. 12 is a side sectional view showing a substrate processing apparatus according to another embodiment,
figure 13 is a perspective view showing the fixing portion and the bellows in figure 12,
figure 14 is a plan view showing the lifter plate,
figure 15 is a side sectional view showing the exhaust flow inside the bellows in the structure according to figure 13,
FIG. 16 is a side sectional view showing exhaust gas flow inside a bellows in a substrate processing apparatus according to another embodiment,
FIG. 17 is a side sectional view showing the structure of a substrate processing apparatus according to still another embodiment,
FIG. 18 is a sectional view showing a bellows structure and an exhaust passage in a substrate processing apparatus according to the prior art,
fig. 19 is a sectional view showing a bellows structure of a substrate support portion in a substrate processing apparatus according to another conventional technique.
Detailed Description
Hereinafter, the configuration of a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a side sectional view illustrating an internal structure of a substrate processing apparatus 1000 according to an embodiment of the present invention.
The substrate processing apparatus 1000 may include a chamber 100 for accommodating a substrate W and providing a processing space 123 for the substrate W, at least one support rod 320, 3400A, 3400B, 5620A, 5620B vertically penetrating at least one through hole 124, 127, 128 formed in a bottom surface of the chamber 100, bellows units 460, 3410A, 3410B, 5410A, 5410B surrounding the support rod 320 at an outer side of the chamber 100 and sealing the chamber 100, and at least one bellows exhaust passage 514, 516, 1710, 1720, 1750, 1760 connected to the bellows unit 460 and exhausting gas.
Here, the support bar 320 may include at least one of a susceptor support bar 320 penetrating through a first through hole 124 formed in the bottom surface of the chamber 100 and connected to a susceptor 310 supporting the substrate W, susceptor auxiliary support bars 3400A and 3400B (see fig. 9) penetrating through a second through hole 127 (see fig. 11) formed in the bottom surface of the chamber 100 and supporting the susceptor 310, and mask support bars 5620A and 5620B (see fig. 17) supporting a mask 5600 (see fig. 17) placed above the substrate W and penetrating through a third through hole 128 (see fig. 17) formed in the bottom surface of the chamber 100.
Fig. 1 shows a case where the support bar 320 is constituted by the base support bar 320. In this case, the bellows units 460, 3410A, 3410B, 5410A, 5410B may be formed of a first bellows unit 460 that surrounds the base support rod 320 and seals the chamber 100, and the bellows exhaust passages 514, 516, 1710, 1720, 1750, 1760 may be formed of a first bellows exhaust passage 514, 516 that exhausts gas from the first bellows unit 460.
First, the substrate processing apparatus 1000 may include a chamber 100 having a processing space 123 for processing a substrate W.
The chamber 100 may include a chamber body 120 and a chamber lid 110 that seals an upper portion of an opening of the chamber body 120.
A showerhead 200 for supplying a process gas or the like toward the substrate W may be provided inside the chamber 100. The showerhead 200 is disposed above the inside of the chamber 100 to supply a process gas, etc. toward the substrate W.
A process gas supply 500 supplying the process gas supplies the process gas from the outside of the chamber 100 toward the showerhead 200.
In this case, in order to maintain uniformity of the vapor deposition film deposited on the substrate W, the showerhead 200 may be disposed substantially parallel to the susceptor 310 on which the substrate W is mounted, and the gap between the showerhead and the susceptor 310 may be appropriately adjusted.
On the other hand, a susceptor 310 for supporting the substrate W may be provided below the processing space 123 in the chamber 100.
Specifically, the substrate W may be seated on the susceptor 310. In this case, a base support rod 320 for moving the base 310 up and down by a predetermined distance is connected to the center of the bottom surface of the base 310. The base support lever 320 is shown as a separate component from the base 310 in fig. 1, but the present invention is not limited thereto, and the base support lever 320 may be integrally formed with the base 310.
On the other hand, when various processing processes are performed on the substrate W inside the chamber 100, gas or powder (powder) or the like may remain inside the chamber 100.
In this case, if powder remains inside the chamber 100, the powder may adhere to a thin film deposited on the substrate and become particles (particles).
Therefore, the substrate processing apparatus 1000 according to the present invention may include an exhaust unit 800 for exhausting such gas, powder, or the like to the outside of the chamber 100.
The exhaust portion 800 may include at least one chamber exhaust channel 810, 820 and at least one pump portion (not shown) connected to the chamber exhaust channel 810, 820.
The chamber exhaust passages 810 and 820 are connected to the base 121 of the chamber 100 to exhaust gas, powder, or the like inside the chamber 100 to the outside of the chamber 100. The chamber exhaust passages 810 and 820 are shown as two in fig. 1, but are not limited thereto, and may be formed to include one or more number of exhaust passages.
In addition, in the present embodiment, the chamber exhaust passages 810 and 820 are illustrated as being connected to the base 121 of the chamber 100, but the chamber exhaust passages 810 and 820 may be connected to a sidewall of the chamber 100 or a chamber lid 110.
On the other hand, when the chamber exhaust passages 810 and 820 are formed in two or more, if the pump section is disposed for each exhaust passage, the structure of the entire apparatus may become very complicated and control may become difficult. Thus, the chamber exhaust channels 810, 820 may merge into a unified exhaust channel 830, with a pump section disposed in the unified exhaust channel 830.
On the other hand, the susceptor support rod 320 is formed to penetrate through the first through hole 124 formed in the base 121 of the chamber 100 and to protrude to the outside of the chamber 100. In this case, since the inside of the chamber 100 is maintained in a vacuum state during the process of the substrate W, the first bellows unit 460 is provided to maintain the first through hole 124 in a sealed state.
In this case, the first bellows unit 460 may include a first bellows 410 surrounding the base support rod 320 and sealing the chamber 100, and a first lifting plate 700 connected to a lower end of the first bellows 410 and a lower end of the base support rod 320 and vertically lifted and lowered.
The first bellows 410 maintains the sealing of the first through-hole 124 under the chamber 100 and outside the base support rod 320 during the up and down movement of the base 310.
On the other hand, gas, powder, or the like, which may be generated during the process for treating the substrate W, may flow into the first bellows 410 through the gap between the edge of the first through hole 124 and the outer surface of the susceptor support rod 320. Although the gap is substantially formed very small, it is sufficient to form a gap for the powder and the like to flow into the first bellows 410. Further, the gas flowing into the first bellows 410 may form foreign substances such as powder therein.
The powder and the like that flow into the inside of the first bellows 410 or are generated inside the first bellows 410 are accumulated below the inside of the first bellows 410. At this time, when the susceptor support rod 320 moves up and down, the foreign substances deposited inside the first bellows 410 are scattered and may be diffused into the chamber 100 through the first through hole 124, and such foreign substances act as particles on the thin film deposited on the substrate W to deteriorate the quality of the thin film.
In particular, since the chamber exhaust passages 810 and 820 are inclined to one side rather than being disposed at the center of the base 121 of the chamber 100, when gas and the like in the chamber 100 are pumped and exhausted through the chamber exhaust passages 810 and 820, the possibility of scattering of powder and the like in the first bellows 410 is increased.
Further, since the interval between the edge of the first through hole 124 and the outer surface of the base support rod 320 is substantially very small and the chamber exhaust passages 810 and 820 are disposed to be inclined to one side from the center portion of the base 12 of the chamber 100, it is difficult to pump and exhaust the powder and the like accumulated inside the first bellows 410 even when the exhaust portion 800 is provided.
Therefore, in the present invention, in order to solve such a problem, a structure capable of discharging powder or gas is employed inside the first bellows 410.
In this case, when the base support rod 320 moves up and down, the first bellows 410 contracts or expands up and down to allow the base support rod 320 to move, and at the same time, seals the base support rod 320 around to maintain the sealed state of the first through hole 124.
As a result, when the shape of the bellows is considered, it may become a very difficult task to directly connect the exhaust passage, etc. to the first bellows 410, which is repeatedly contracted or expanded up and down in the process of treating the substrate W. In addition, a bending load is continuously generated at the exhaust passage due to the repetitive movement of the first bellows 410, thereby possibly causing damage or breakage at the exhaust passage.
Therefore, in the present invention, when gas, powder, or the like inside the first bellows 410 is discharged, the exhaust passage is connected to the fixed member, not to the component that moves like the bellows or the like.
Specifically, a first fixing portion 510 may be disposed between an upper portion of the first bellows 410 and a bottom surface of the chamber 100, and at least one first bellows exhaust passage 514, 516 connected to the first fixing portion 510 to exhaust gas may be disposed.
Fig. 2 is a perspective view illustrating the first fixing portion 510 and the first corrugated tube 410.
Referring to fig. 1 and 2, an upper end of the first fixing portion 510 is connected to a bottom surface of the chamber 100, and a lower end of the first fixing portion 510 is connected to an upper end of the first bellows 410. At this time, the lower end of the first bellows 410 is connected to the first elevating plate 700.
The driving means is connected to the first elevating plate 700 to vertically elevate the first elevating plate 700, and at this time, the susceptor support rod 320 and the susceptor 310 are vertically elevated together. When the base 310 is lifted up and down, the first bellows 410 is extended and contracted, and the first fixing portion 510 is fixed without displacement or deformation when the base 310 is lifted up and down.
On the other hand, at least one first bellows exhaust passage 514, 516 is connected to the first fixing portion 510.
In this case, first connection holes 512 and 513 may be formed in the first fixing portion 510, and the first bellows exhaust passages 514 and 516 may be connected to the first connection holes 512 and 513.
In this case, the first fixing portion 510 corresponds to a fixed component rather than a movable component, and can be easily connected when the first bellows exhaust passages 514 and 516 are connected. Further, since no bending load or the like acts on the first bellows exhaust passages 514, 516, the possibility of damage or breakage of the first bellows exhaust passages 514, 516 can be reduced.
On the other hand, a heat exchange device (not shown) for temperature adjustment, various sensors (not shown), and the like may be disposed on the base 310, and at least one fluid pipe 323 or at least one wire 324 connected to the heat exchange device for temperature adjustment of the base 310 may extend downward through the inside of the base support rod 320.
Therefore, if the exhaust passage is directly connected to the central portion of the base 121 of the chamber 100, it is very difficult to connect the exhaust passage to the fluid pipe 323, the wire 324, and the like by interference. In addition, the same problem occurs when the exhaust passage is connected to the right below the first bellows 410.
Therefore, in the present invention, at least one fluid pipe 323 or at least one wire 324 for adjusting the temperature of the susceptor 310 extends below the first elevation plate 700 through the susceptor support rod 320 and the first elevation plate 700. For example, the fluid pipe 323 and the electric wire 324 may be surrounded by a protective part 322 or the like, penetrate the susceptor support rod 320 and the first elevating plate 700, and extend below the first elevating plate 700.
In this case, the first bellows exhaust passages 514, 516 are connected to the side of the first fixing portion 510. This prevents the first bellows exhaust passages 514, 516 from interfering with the fluid pipe, the electric wire, and the like.
On the other hand, in the drawings, the first bellows exhaust passages 514, 516 are connected to two at the first fixing portion 510 and symmetrically connected to the first fixing portion 510, but are not limited thereto. That is, the number of the first bellows exhaust passages 514, 516, the connection position, and the like may be appropriately deformed.
For example, the exhaust passages constituting the first bellows exhaust passages 514 and 516 may be arranged offset from each other instead of being arranged on a straight line centering on the center portion of the bellows 410.
In this way, when the first bellows exhaust passages 514 and 516 are arranged to be offset from each other, when the exhaust is performed through the first bellows exhaust passages 514 and 516, turbulence due to the exhaust flow is generated in the first bellows 410, and the exhaust can be performed more efficiently.
In another aspect, the first bellows vent passages 514, 516 may be connected to the chamber vent passages 810, 820. Therefore, when the gas or powder inside the chamber 100 is pumped and discharged through the chamber exhaust passages 810 and 820, the pumping force of the chamber exhaust passages 810 and 820 is transmitted to the first bellows exhaust passages 514 and 516, and the residual gas or powder inside the first bellows 410 can be pumped and discharged together.
That is, as shown in fig. 3, when the pumping discharge is performed through the first bellows gas discharge passages 514 and 516, the gas, powder, or the like remaining under the first bellows 410 can be discharged, and the remaining gas, powder, or the like flowing into the first bellows 410 through the first through hole 124 can be discharged.
On the other hand, although not shown in the drawings, the first connection holes 512 and 513 may be formed obliquely toward the upper direction or toward the first through hole 124.
When the first connection holes 512 and 513 have an inclined structure, the gas or powder flowing into the inside of the first bellows 410 through the first through hole 124 may be more effectively discharged and removed through the first connection holes 512 and 513 and the first bellows gas discharge passages 514 and 516.
In addition, the first bellows exhaust passages 514, 516 may not be connected to the chamber exhaust passages 810, 820, and the first bellows exhaust passages 514, 516 and the chamber exhaust passages 810, 820 may be connected to respective independent pump portions (not shown), in which case at least one of the independent pump portions may have a different pumping pressure.
For example, the pumping pressures of a bellows pump section (not shown) connected to the first bellows exhaust passages 514, 516 and a chamber pump section (not shown) connected to the chamber exhaust passages 810, 820 may be adjusted differently.
When the pumping pressure of the bellows pump portion is made larger than that of the chamber pump portion, the gas or powder or the like inside the first bellows 410 can be discharged more effectively.
Additionally, the first bellows vent passage 514, 516 may have a smaller cross-sectional area than the chamber vent passage 810, 820. By making the sectional area of the first bellows exhaust passage 514, 516 small, the internal pressure of the first bellows exhaust passage 514, 516 is made lower than that of the chamber exhaust passage 810, 820, and the pumping efficiency can be improved.
Also, although not shown in the drawings, in the case where the first bellows exhaust passages 514, 516 are directly connected to the pump portion, the aforementioned structures of the chamber exhaust passages 810, 820 may be omitted. That is, in the case of discharging the gas or the like inside the chamber 100, when a large pumping capacity is not required, the gas inside the chamber 100 may be discharged using only the first bellows gas discharge passages 514 and 516.
In this case, the distance between the edge of the first through hole 124 and the outer surface of the base support rod 320 is increased, and the pumping efficiency of the first bellows exhaust passages 514 and 516 is improved, so that the gas and the like in the chamber 100 can be more smoothly exhausted.
On the other hand, fig. 4 illustrates a substrate processing apparatus 2000 according to another embodiment. The same reference numerals are used for the same components as in the foregoing embodiment.
Referring to fig. 4, the substrate processing apparatus 2000 according to the present embodiment may further include a second bellows 420 connected to a lower end portion of the first elevation plate 700', and a first auxiliary plate 630 connected to a lower end portion of the second bellows 420 and supported by a first support rod 610 connected to a lower portion of the chamber 100.
In this case, the first bellows 410 and the second bellows 420 may be sequentially disposed below the chamber 100 to be able to expand and contract in the vertical direction.
In this case, an upper end portion of the first bellows 410 may be connected to the bottom surface of the chamber 100, and a lower end portion of the first bellows 410 may be connected to an upper surface of the first lifting plate 700'. The upper end of the second bellows 420 is connected to the bottom surface of the first elevating plate 700', and the lower end of the second bellows 420 is connected to the first auxiliary plate 630. At this time, the first auxiliary plate 630 is supported and fixed by the first support rod 610 extending downward from the bottom surface of the chamber 100.
Fig. 5 is a perspective view illustrating the first bellows 410 and the second bellows 420, and fig. 6 is a plan view illustrating the first lifting plate 700'.
Referring to fig. 4 to 6, the lower end of the susceptor support rod 320 of the susceptor 310 may be connected to the first elevating plate 700', an extension part 705 may be provided on one side of the first elevating plate 700', and the extension part 705 may be connected to a driving member (not shown).
Accordingly, when the first lifting plate 700' is driven by the driving member to move up and down, the susceptor support shaft 320 and the susceptor 310 may move up and down together.
On the other hand, communication holes 710 and 720 for communicating the space inside the first bellows 410 and the space inside the second bellows 420 may be formed in the first elevating plate 700'.
In this case, the communication holes 710 and 720 may be formed between the first bellows 410 and the base support rod 320, and although 2 communication holes are illustrated in the drawings, the number and shape of the communication holes may be appropriately changed.
The inside space of the first bellows 410 and the inside space of the second bellows 420 are communicated through the communication holes 710 and 720. Therefore, as described later, when gas, powder, or the like is discharged through the lower end portion of the second bellows 420, the gas, or the like, can be discharged through the space inside the first bellows 410, the communication holes 710 and 720, and the space inside the second bellows 420. This will be described later.
On the other hand, referring to fig. 4 and 5, a second fixing portion 520 may be further provided to connect the lower end of the second bellows 420 and the first auxiliary plate 630, together with a first fixing portion 510 to connect the upper end of the first bellows 410 and the bottom surface of the chamber 100.
The first and second fixing portions 510 and 520 may have a substantially cylindrical shape with an upper and lower opening as shown in the drawing.
The upper end of the first fixing portion 510 may be connected to the bottom surface of the chamber 100, more specifically, to the bottom surface of the chamber 100 outside the first through hole 124. In addition, a lower end of the first fixing portion 510 is connected to an upper end of the first bellows 410. In this case, the base support rod 320 may be inserted into the first fixing portion 510 and the first bellows 410 and connected to the first elevating plate 700'.
On the other hand, an upper end of the second fixing portion 520 is connected to a lower end of the second bellows 420, and a lower end of the second fixing portion 520 is connected to the first auxiliary plate 630.
In the case of the above-described structure, when the first lifting plate 700' moves up and down to lift and lower the base 310, the first bellows 410 and the second bellows 420 contract and expand, and the first fixing portion 510 and the second fixing portion 520 may be fixed without displacement or deformation.
For example, when the first lifting plate 700' is lifted, the first bellows 410 is contracted and the second bellows 420 is extended. Conversely, when the first lifting plate 700' is lowered, the first bellows 410 is extended and the second bellows 420 is contracted.
In this case, the first and second fixing portions 510 and 520 located at the upper end of the first bellows 410 and the lower end of the second bellows 420 are connected to the bottom surface of the chamber 100 and the first auxiliary plate 630, respectively, and are maintained at fixed positions.
In this case, at least one second bellows discharge passage 524 connected to the second fixing portion 520 to discharge gas may be further provided.
That is, in the present embodiment, a first bellows exhaust passage 514 connected to the first fixing portion 510 and a second bellows exhaust passage 524 connected to the second fixing portion 520 may be provided.
On the other hand, a heat exchange device (not shown) for temperature adjustment, various sensors (not shown), and the like may be disposed on the base 310, and at least one fluid pipe 323 or at least one wire 324 connected to the heat exchange device for temperature adjustment of the base 310 may extend downward through the inside of the base support rod 320.
Therefore, if the exhaust passage is directly connected to the central portion of the base 121 of the chamber 100, it is very difficult to connect the exhaust passage to the fluid pipe 323, the wire 324, and the like by interference. In addition, the same problem occurs when the exhaust passage is connected to the right below the second bellows 420.
Therefore, in the present invention, a third bellows 430 connecting the first elevation plate 700' and the first auxiliary plate 630 may be further provided inside the second bellows 420. In this case, at least one fluid pipe 323 or at least one electric wire 324 for adjusting the temperature of the susceptor 310 may penetrate the first elevating plate 700' at the lower end of the susceptor support rod 320, pass through the inside of the third bellows 430, penetrate the first auxiliary plate 630, and extend downward.
For example, the fluid pipe 323 and the electric wire 324 may be surrounded by a protective part 322 or the like, pass through the base support rod 320 and the third bellows 430, and extend below the first auxiliary plate 630.
In this case, the first bellows discharge passage 514 is connected to a side surface of the first fixing portion 510, and the second bellows discharge passage 524 is connected to a side surface of the second fixing portion 520. This prevents the first bellows exhaust passage 514 and the second bellows exhaust passage 524 from interfering with the fluid line, the electric wire, and the like.
In this case, the first fixing portion 510 may include a first connection hole 512 connected to the first bellows exhaust passage 514. Similarly, the second fixing portion 520 may include a second connection hole 522 connected to the second bellows exhaust passage 524.
On the other hand, the first bellows exhaust passage 514 and the second bellows exhaust passage 524 may be symmetrically disposed in opposite directions with respect to the center of the first bellows 410 or the second bellows 420, but the present invention is not limited thereto and may be appropriately modified.
For example, the first bellows exhaust passage 514 and the second bellows exhaust passage 524' may be disposed to be offset from each other with respect to a center portion of the first bellows 410 or the second bellows 420, instead of being disposed in a straight line.
In the case where the first bellows exhaust passage 514 and the second bellows exhaust passage 524 'are disposed to be offset from each other, when the exhaust is performed through the first bellows exhaust passage 514 and the second bellows exhaust passage 524', turbulence caused by the exhaust flow is generated in the first bellows 410 and the second bellows 420, and the exhaust can be performed more efficiently.
In another aspect, the first bellows vent passage 514 and the second bellows vent passage 524 may be connected to the chamber vent passages 810, 820 described above.
For example, the total number of the first bellows exhaust passages 514 and the second bellows exhaust passages 524 may be set to correspond to the number of the chamber exhaust passages 810, 820, and the first bellows exhaust passages 514 and the second bellows exhaust passages 524 may be connected to the chamber exhaust passages 810, 820, respectively.
Alternatively, in the case where the total number of the first bellows exhaust passages 514 and the second bellows exhaust passages 524 is larger than the number of the chamber exhaust passages 810, 820, the first bellows exhaust passages 514 and the second bellows exhaust passages 524 may be appropriately connected to the chamber exhaust passages 810, 820 disposed at a close position. In this case, two or more center exhaust passages may be connected to one of the chamber exhaust passages 810 and 820.
In another aspect, the first and second bellows vent passages 514, 524 may have a smaller cross-sectional area than the chamber vent passages 810, 820. By making the sectional areas of the first bellows exhaust passage 514 and the second bellows exhaust passage 524 small, the internal pressures of the first bellows exhaust passage 514 and the second bellows exhaust passage 524 can be made lower than the chamber exhaust passages 810, 820 to improve the pumping efficiency.
On the other hand, fig. 4 shows an embodiment in which the first bellows exhaust passage 514 and the second bellows exhaust passage 524 are connected to the chamber exhaust passages 810 and 820 described above, but the present invention is not limited thereto.
That is, the first bellows exhaust channel 514 and the second bellows exhaust channel 524 may not be connected to the chamber exhaust channels 810 and 820, and the first bellows exhaust channel 514, the second bellows exhaust channel 524, and the chamber exhaust channels 810 and 820 may be connected to respective independent pump sections (not shown), in which case at least one of the independent pump sections may have different pumping pressures.
For example, the pumping pressures of a bellows pump section (not shown) connected to the first bellows exhaust passage 514 and the second bellows exhaust passage 524 and a chamber pump section (not shown) connected to the chamber exhaust passages 810 and 820 may be adjusted differently.
When the pumping pressure of the bellows pump section is made greater than the pumping pressure of the chamber pump section, the gas or powder and the like inside the first bellows 410 and the second bellows 420 can be discharged more effectively.
In addition, although not shown in the drawings, in the case where the first bellows exhaust passage 514 and the second bellows exhaust passage 524 are directly connected to the pump portion, the aforementioned structures of the chamber exhaust passages 810, 820 may be omitted. That is, when the internal gas of the chamber 100 is exhausted, and the like, when a large pumping capacity is not required, the gas inside the chamber 100 may be exhausted using only the first bellows exhaust passage 514 and the second bellows exhaust passage 524.
In this case, the distance between the edge of the first through hole 124 and the outer surface of the base support rod 320 is increased, so that the pumping efficiency of the first bellows exhaust passage 514 and the second bellows exhaust passage 524 is improved, and the gas and the like in the chamber 100 can be more smoothly exhausted.
Fig. 7 is a side sectional view showing the flow of exhaust gas inside the first bellows 410 and the second bellows 420 when the first bellows exhaust passage 514 and the second bellows exhaust passage 524 are provided.
Referring to fig. 7, the gas, powder, or the like, which flows into the first bellows 410 from the inside of the chamber 100 through the first through hole 124, may be discharged through a first bellows discharge passage 514 connected to the first fixing portion 510.
On the other hand, the gas or powder, etc. that cannot be removed through the first bellows gas discharge passage 514 and flows into the inside of the second bellows 420 through the communication holes 710 and 720 of the first elevating plate 700' may be discharged and removed through the second bellows gas discharge passage 524 connected to the second fixing part 520.
On the other hand, fig. 8 is a side sectional view showing the exhaust flow inside the first bellows 410 and the second bellows 420 when the first bellows exhaust passage 514 and the second bellows exhaust passage 524 are provided according to another embodiment. In fig. 8, the same reference numerals are used for the same components as those in fig. 7.
Referring to fig. 8, in the present embodiment, the third connection hole 517, which connects the first bellows exhaust passage 514 and the first fixing portion 510, may be at a predetermined angle θ1Is formed obliquely.
For example, the third connection hole 517 may be formed to be inclined upward or toward the first through hole 124 as shown in the drawing.
When the third connection hole 517 has the aforementioned structure, the gas or powder flowing into the inside of the first bellows 410 through the first through hole 124 may be more effectively discharged and removed through the third connection hole 517 and the first bellows discharge passage 514.
In addition, the fourth connection hole 526 connecting the second bellows exhaust passage 524 and the second fixing portion 520 may be formed at a predetermined angle θ2Is formed obliquely.
For example, the fourth connection hole 526 may be formed to be directed downward as shown in the drawing or to be inclined toward the first auxiliary plate 630.
When the fourth connection hole 526 has the aforementioned structure, the powder and the like that flows into the inside of the second bellows 420 through the communication holes 710 and 720 and accumulates on the upper surface of the first auxiliary plate 630 can be more effectively discharged and removed through the fourth connection hole 526 and the second bellows air release passage 524.
In addition, although not shown in the drawings, the fourth connection hole 526 may be formed to be inclined upward. In this case, the gas, powder, or the like flowing into the inside of the second bellows 420 through the communication holes 710 and 720 can be immediately discharged and removed through the fourth connection hole 526 and the second bellows discharge passage 524.
On the other hand, fig. 9 shows a substrate processing apparatus 3000 according to another embodiment.
In the substrate processing apparatus 3000 according to the present embodiment, the gas supply section 3200 may include a back plate 3210 disposed inside the chamber 100 and a showerhead 3220 disposed below the back plate 3210 to supply a process gas or the like toward the substrate W.
When various processes, for example, a deposition process, are performed on the substrate W, a process gas, which is a deposition material that is converted into plasma by the external high-frequency power supply 950 and has high energy, may be deposited on the substrate.
In this case, the high frequency power supply 950 is connected to the showerhead 3220 to function as an upper electrode, and the susceptor 310 described later is grounded to function as a lower electrode.
However, flat panel displays such as lcd (liquid Crystal Display), pdp (plasma Display panel), and oled (organic Light Emitting diodes) are gradually enlarged and enlarged in area, and thus the back plate 3210, the head 3220, and the base 310 are also enlarged in area.
In this case, it is necessary to stably support the large-area back plate 3210 and the heads 3220. To this end, the backing plate 3210 may be coupled to and supported by the inner wall of the chamber body 120. For example, the edge of the back plate 3210 may be supported by a protrusion 122 formed to protrude from the inner wall of the chamber body 120, and the showerhead 3220 may be connected to the bottom surface of the back plate 3210 at a predetermined distance.
Therefore, a space portion 3230 is formed between the head 3220 and the back plate 3210. A process gas supplied from a process gas supply source 500 is supplied to the spaced-apart space portion 3230 and supplied toward the substrate W through the showerhead 3220.
At this time, a plurality of fine through holes 3222 may be formed in the head 3220. The process gas supplied to the spaced-apart space portion 3230 is supplied toward the substrate W through the through hole 3222.
On the other hand, if the size of the base 310 is increased as described above, it is necessary to be able to form the base 310 in addition to the base support rod 320. That is, as shown in fig. 9, the base 310 may be provided with base auxiliary support bars 3400A, 3400B for supporting the base.
In this case, the susceptor support rod 320 extends through the first through hole 124 of the base 121 of the chamber 100, and is sealed by a susceptor bellows 330 below the chamber 100. For example, the lower end of the base support rod 320 and the lower end of the base bellows 330 may be connected to the first elevating plate 700, whereby the vacuum state inside the chamber 100 may be maintained.
The first elevating plate 700 connected to the lower end of the base support rod 320 is connected to a driving source (not shown) such as a motor and moves up and down, and thus the base 310 also moves up and down.
Before a process is performed on the substrate W such as a vapor deposition process, the susceptor 310 is raised toward the showerhead 3220. At this time, a distance between the susceptor 310 and the aforementioned spray head 3220 may be previously defined, thereby determining a rising height of the susceptor 310.
On the other hand, as the size and area of the flat panel display are increased, the size and area of the base 310 are also increased, and thus the load is also increased.
Therefore, if the base having a large area is supported by the base support rod 320 located on the bottom surface of the central portion of the base 310, a region or an edge region spaced from the central portion of the base 310 may be downwardly drooped. In this case, the distance between the substrate W seated on the susceptor 310 and the showerhead 3220 is changed and the quality of a thin film evaporated on the substrate W may be degraded.
In order to solve such a problem, base auxiliary support bars 3400A, 3400B supporting the bottom surface of the base 310 may be provided. The lower end portions of the base auxiliary support bars 3400A, 3400B may be connected to a second elevating plate 3440 that moves up and down.
The plurality of base auxiliary support bars 3400A, 3400B support the bottom surface of the base 310 while supporting the bottom surface of the base 310 at a predetermined distance from the base support bars 320.
In order to prevent the base 310 from being tilted in any direction, it is preferable that the plurality of base auxiliary support bars 3400A, 3400B be arranged symmetrically about the base support bar 320 to support the base 310.
For example, the lower end portions of the plurality of base auxiliary support rods 3400A, 3400B extend through the second through hole 127 (see fig. 11) of the base 121 of the chamber 100, and are sealed by the second bellows units 3410A, 3410B outside the chamber 100.
Specifically, the second bellows units 3410A and 3410B may include fourth bellows 3420A and 3420B surrounding the base auxiliary support rods 3400A and 3400B and sealing the chamber 100, and a second elevating plate 3440 connected to lower ends of the fourth bellows 3420A and 3420B and lower ends of the base auxiliary support rods 3400A and 3400B and vertically elevating and lowering the second bellows units 3410A and 3410B.
Therefore, the lower end portions of the base auxiliary support bars 3400A, 3400B and the lower end portions of the fourth bellows 3420A, 3420B may be connected to the second elevating plate 3440, by which the vacuum state inside the chamber 100 may be maintained.
On the other hand, the first lifting plate 700 and the second lifting plate 3440 are illustrated as separate members, but may be integrally formed. When the first lifting plate 700 and the second lifting plate 3440 are integrally formed, the base support bar 320 and the base auxiliary support bars 3400A, 3400B may be lifted and lowered together.
The second elevating plate 3440 is connected to a driving source (not shown) such as a motor and moves up and down, and thereby the base auxiliary support rods 3400A, 3400B also move up and down.
On the other hand, when various processing processes are performed on the substrate W inside the chamber 100, gas or powder (powder) or the like may remain inside the chamber 100.
In this case, if powder remains inside the chamber 100, the powder may adhere to a thin film deposited on the substrate and become particles (particles).
Therefore, the substrate processing apparatus 3000 according to the present invention may include an exhaust unit 800 to exhaust such gas, powder, or the like to the outside of the chamber 100.
The exhaust portion 800 may include at least one chamber exhaust channel 810, 820 and at least one pump portion (not shown) connected to the chamber exhaust channel 810, 820. The description of the exhaust unit 800 is similar to the previous embodiment, and thus, a repetitive description thereof will be omitted.
On the other hand, gas, powder, or the like that may be generated during the process of processing the substrate W may flow into the fourth bellows 3420A, 3420B through the gap between the edge of the second through hole 127 and the outer surface of the base auxiliary support rods 3400A, 3400B. Although the interval is not substantially large, it is sufficient to form an interval at which the powder or the like flows inside the fourth bellows 3420A, 3420B. Further, the gas flowing into the fourth bellows 3420A, 3420B may form foreign substances such as powder therein.
The powder and the like that have flowed into the inside of the fourth bellows 3420A, 3420B or that have been generated inside the fourth bellows 3420A, 3420B are accumulated below the inside of the fourth bellows 3420A, 3420B. At this time, when the base auxiliary support rods 3400A, 3400B move up and down, foreign substances accumulated in the bent regions of the fourth bellows 3420A, 3420B or foreign substances accumulated in the bottom surfaces of the fourth bellows 3420A, 3420B may be scattered and diffused into the chamber 100 through the second through holes 127 by the up-and-down expansion or contraction operation of the fourth bellows 3420A, 3420B. Such foreign matter acts as particles on the thin film deposited on the substrate W, and causes a decrease in the quality of the thin film.
Further, since the space between the edge of the second through hole 127 and the outer surface of the base auxiliary support rods 3400A, 3400B is not substantially large and the chamber exhaust passages 810, 820 are disposed to be inclined toward the base 121 of the chamber 100, it is difficult to pump and exhaust the powder and the like accumulated inside the fourth bellows 3420A, 3420B even when the exhaust unit 800 is provided.
Therefore, in the present invention, in order to solve such a problem, a structure capable of discharging powder or gas is employed inside the fourth bellows 3420A, 3420B.
Specifically, in the present invention, at least one third bellows exhaust channel 1710, 1720 connected to the second bellows unit 3410A, 3410B is provided, and the second through holes 127 are used to exhaust gas, thereby preventing powder or the like from being deposited inside the fourth bellows 3420A, 3420B.
In this case, when the base auxiliary support rods 3400A, 3400B move up and down, the fourth bellows 3420A, 3420B contract or expand up and down to seal the base auxiliary support rods 3400A, 3400B around while allowing the movement of the base auxiliary support rods 3400A, 3400B, thereby maintaining the sealed state of the second through holes 127.
As a result, when the shape of the bellows is taken into consideration, it may become a very difficult task to directly connect the exhaust passage and the like to the fourth bellows 3420A, 3420B which repeatedly contract or expand up and down in the process of treating the substrate W. In addition, in the case where the vent passage is directly connected to the fourth bellows 3420A, 3420B, a bending load is continuously generated in the vent passage due to the repetitive up-and-down movement of the fourth bellows 3420A, 3420B, which may cause damage or breakage in the vent passage.
Therefore, in the present invention, when gas or powder or the like inside the fourth bellows 3420A, 3420B is discharged, the gas discharge passage is connected to the fixed member instead of the component moving like a bellows or the like.
Specifically, third fixing portions 1210 and 1220 may be provided between the upper side of the fourth bellows 3420A and 3420B and the bottom surface of the chamber 100, and at least one third bellows exhaust passage 1710 and 1720 connected to the third fixing portions 1210 and 1220 to exhaust gas may be provided.
Fig. 10 is a perspective view illustrating the third fixing portion 1210 and the fourth bellows 3420A.
Referring to fig. 9 and 10, upper ends of the third fixing portions 1210 and 1220 are connected to the bottom surface of the chamber 100, and lower ends of the third fixing portions 1210 and 1220 are connected to upper ends of the fourth bellows 3420A and 3420B. At this time, the lower end portions of the fourth bellows 3420A, 3420B are connected to the second elevating plate 3440.
The driving means is connected to the second elevating plate 3440 to vertically elevate the second elevating plate 3440, and at this time, the base auxiliary support rods 3400A, 3400B are vertically elevated together. When the base auxiliary support bars 3400A, 3400B are lifted up and down, the fourth bellows tubes 3420A, 3420B are extended and contracted, and the third fixing portions 1210, 1220 are fixed without displacement or deformation when the base auxiliary support bars 3400A, 3400B are lifted up and down.
At this time, at least one third bellows exhaust channel 1710, 1720 is connected to the third fixing portions 1210, 1220.
In this case, a fifth connection hole 1216 may be formed at the third fixing portions 1210 and 1220, and the third bellows exhaust passages 1710 and 1720 may be connected to the fifth connection hole 1216.
The third fixing portions 1210 and 1220 correspond to fixed components, not moving components, and can be easily connected when the third bellows exhaust passages 1710 and 1720 are connected. Further, since no bending load or the like acts on the third bellows exhaust passages 1710, 1720, the possibility of damage or breakage of the third bellows exhaust passages 1710, 1720 can be reduced. The third bellows exhaust passages 1710, 1720 may be connected to the sides of the third fixing parts 1210, 1220.
On the other hand, the third bellows exhaust passages 1710, 1720 are shown in the drawings as being connected to the third fixing portions 1210, 1220, respectively, but are not limited thereto. That is, the number of the third bellows exhaust passages 1710, 1720, the connection positions, and the like may be appropriately changed.
In another aspect, the third bellows exhaust passage 1710, 1720 can be connected to the chamber exhaust passage 810, 820. Therefore, when the gas or powder and the like inside the chamber 100 are pumped and discharged through the chamber exhaust passages 810 and 820, the pumping force of the chamber exhaust passages 810 and 820 is transmitted to the third bellows exhaust passages 1710 and 1720, and the remaining gas or powder inside the fourth bellows 3420A and 3420B can be pumped and discharged together.
That is, as shown in fig. 11, when the pumping discharge is performed through the third bellows exhaust path 1710, the gas, powder, or the like remaining inside the fourth bellows 3420A can be discharged, and the remaining gas, powder, or the like flowing into the fourth bellows 3420A through the second through holes 127 can be discharged.
On the other hand, although not shown in fig. 11, the fifth connection hole 1216 may be formed to be inclined toward an upper direction or toward the second through hole 127.
When the fifth connection hole 1216 has an inclined structure, the gas or powder flowing into the inside of the fourth bellows 3420A through the second penetration hole 127 may be more effectively discharged and removed through the fifth connection hole 1216 and the third bellows exhaust passage 1710.
In addition, the third bellows exhaust channels 1710, 1720 may not be connected to the chamber exhaust channels 810, 820, and the third bellows exhaust channels 1710, 1720 and the chamber exhaust channels 810, 820 may be connected to separate pump sections (not shown). In this case, at least one of the independent pump sections may have a different pumping force (pumping force) than the other pump sections.
For example, the pumping force of a bellows pump section (not shown) connected to the third bellows exhaust channels 1710, 1720 and a chamber pump section (not shown) connected to the chamber exhaust channels 810, 820 may be adjusted differently.
When the pumping force of the bellows pump portion is made larger than the pumping force of the chamber pump portion, the gas or powder and the like inside the fourth bellows 3420A, 3420B can be discharged more efficiently.
Further, by increasing the pumping force for discharging the gas downward of the chamber 100 through the bellows pump portion, the powder and the like in the bellows can be prevented from flowing back into the chamber 100 again.
Also, the third bellows exhaust passage 1710, 1720 can have a smaller cross-sectional area than the chamber exhaust passage 810, 820. By making the sectional area of the third bellows exhaust passages 1710, 1720 small, the internal pressure of the third bellows exhaust passages 1710, 1720 can be made lower than the chamber exhaust passages 810, 820, and the pumping efficiency can be improved.
Also, although not shown in the drawings, in the case where the third bellows exhaust passages 1710, 1720 are directly connected to the pump portion, the aforementioned structure of the chamber exhaust passages 810, 820 may be omitted. That is, in the case of discharging the gas or the like inside the chamber 100, when a large pumping capacity is not required, the gas inside the chamber 100 may be discharged using only the third bellows discharge passages 1710 and 1720.
In this case, the distance between the edge of the second through hole 127 and the outer surface of the base auxiliary support rods 3400A, 3400B is increased, and the pumping efficiency by the third bellows exhaust passages 1710, 1720 is improved, so that the gas and the like inside the chamber 100 can be more smoothly exhausted.
On the other hand, fig. 12 illustrates a substrate processing apparatus 4000 according to another embodiment. The same reference numerals are used for the same components as in the foregoing embodiment.
Referring to fig. 12, in the substrate processing apparatus 4000 according to the present embodiment, the second bellows units 3410A and 3410B may further include fifth bellows 4430A and 4430B connected to bottom surfaces of the second elevating plates 3440A 'and 3440B', and a second auxiliary plate 4440 connected to lower end portions of the fifth bellows 4430A and 4430B and supported by a second support bar 4610 connected to a lower portion of the chamber 100.
In this case, the fourth bellows 3420A, 3420B and the fifth bellows 4430A, 4430B may be arranged below the chamber 100 in order to be able to expand and contract in the up-down direction.
In this case, upper end portions of the fourth bellows 3420A, 3420B may be connected to the bottom surface of the chamber 100, respectively, and lower end portions of the fourth bellows 3420A, 3420B may be connected to upper surfaces of the second lifting plates 3440A ', 3440B', respectively. Further, upper ends of the fifth bellows 4430A, 4430B are connected to the bottom surfaces of the second lifting plates 3440A ', 3440B', respectively, and lower ends of the fifth bellows 4430A, 4430B are connected to the second auxiliary plate 4440, respectively. At this time, the second auxiliary plate 4440 is supported and fixed by the second support bar 4610 downwardly extending from the bottom surface of the chamber 100.
Fig. 13 is a perspective view showing the fourth bellows 3420A and the fifth bellows 4430A, and fig. 14 is a plan view showing the second elevating plate 3440A'.
Referring to fig. 12 to 14, the second lifting plates 3440A ', 3440B' are illustrated as separate members, but are not limited thereto and may be formed of one member. In the case where the second lifting plate is formed of one member, only one driving means for vertically lifting the second lifting plate may be provided.
On the other hand, lower end portions of the base auxiliary support rods 3400A, 3400B may be connected to the second elevating plates 3440A ', 3440B', respectively, and an extension portion 4705 or the like may be provided on one side of the second elevating plates 3440A ', 3440B' and the extension portion 4705 may be connected to a driving member (not shown).
Therefore, when the second elevating plates 3440A ', 3440B' are moved up and down by the driving of the driving members, the base auxiliary support rods 3400A, 3400B may be moved up and down together.
On the other hand, communication holes 4710, 4720 that communicate the inner spaces of the fourth bellows 3420A, 3420B and the inner spaces of the fifth bellows 4430A, 4430B may be formed in the second lifting plates 3440A ', 3440B'.
In this case, the communication holes 4710, 4720 may be formed between the fourth bellows 3420A, 3420B and the base auxiliary support bars 3400A, 3400B, and although 2 communication holes are shown in the drawings, the number and shape of the communication holes may be appropriately changed.
The inside spaces of the fourth bellows 3420A, 3420B and the inside spaces of the fifth bellows 4430A, 4430B are communicated through the communication holes 4710, 4720. Therefore, as described later, when gas or powder or the like is discharged through the lower end portion of the fifth bellows 4430A, 4430B, the gas or the like can be discharged through the space inside the fourth bellows 3420A, 3420B, the communication holes 4710, 4720, and the space inside the fifth bellows 4430A, 4430B. This will be described later.
On the other hand, referring to fig. 12 and 13, fourth fixing portions 1230 and 1240 connecting lower ends of the fifth bellows 4430A and 4430B and the second auxiliary plate 4440 may be provided together with third fixing portions 1210 and 1220 connecting upper ends of the fourth bellows 3420A and 3420B and the bottom surface of the chamber 100.
The third and fourth holders 1210, 1220, 1230, 1240 may have a substantially cylindrical shape that is open in the up-down direction as shown in the drawings.
The upper ends of the third fixing parts 1210 and 1220 may be connected to the bottom surface of the chamber 100, more specifically, to the bottom surface of the chamber 100 outside the second through hole 127 (refer to fig. 15). Further, lower ends of the third fixing portions 1210 and 1220 are connected to upper ends of the fourth bellows 3420A and 3420B. In this case, the base auxiliary support bars 3400A, 3400B may be inserted into the inside of the third fixing parts 1210, 1220 and the fourth bellows 3420A, 3420B to be connected to the second lifting plates 3440A ', 3440B'.
On the other hand, upper ends of the fourth fixing parts 1230, 1240 are connected to lower ends of the fifth bellows 4430A, 4430B, and lower ends of the fourth fixing parts 1230, 1240 are connected to the second auxiliary plate 4440.
With the above-described configuration, when the second elevating plates 3440A ', 3440B' are vertically moved in order to vertically move the base auxiliary support rods 3400A, 3400B, the fourth bellows 3420A, 3420B and the fifth bellows 4430A, 4430B contract and extend, and the third fixing portions 1210, 1220 and the fourth fixing portions 1230, 1240 can be fixed without displacement or deformation.
For example, when the second lifting plates 3440A ', 3440B' are lifted, the fourth bellows 3420A, 3420B are contracted, and the fifth bellows 4430A, 4430B are extended. Conversely, when the second lifting plates 3440A ', 3440B' are lowered, the fourth bellows 3420A, 3420B are extended, and the fifth bellows 4430A, 4430B are contracted.
In this case, the third and fourth fixtures 1210 and 1220 and 1230 and 1240 located at the upper end portions of the fourth bellows 3420A and 3420B and the lower end portions of the fifth bellows 4430A and 4430B are respectively connected to the bottom surface of the chamber 100 and the second auxiliary plate 4440 to maintain fixed positions.
In this case, at least one fourth bellows exhaust passage 1730, 1740 connected to the fourth fixing portion 1230, 1240 to exhaust gas may be further provided.
That is, in the present embodiment, third bellows exhaust passages 1710 and 1720 connected to the third fixing portions 1210 and 1220, and fourth bellows exhaust passages 1730 and 1740 connected to the fourth fixing portions 1230 and 1240 may be provided. In this case, the third bellows evacuation passages 1710 and 1720 may be connected to the side surfaces of the third fixing portions 1210 and 1220, and the fourth bellows evacuation passages 1730 and 1740 may be connected to the side surfaces of the fourth fixing portions 1230 and 1240.
On the other hand, although not shown in the drawings, the third fixing portions 1210 and 1220 may be omitted and only the fourth fixing portions 1230 and 1240 may be provided. In this case, only the fourth bellows exhaust passages 1730, 1740 connected at the sides of the fourth fixing portions 1230, 1240 are provided. Hereinafter, it is assumed that all of the third fastening parts 1210 and 1220 and the fourth fastening parts 1230 and 1240 are provided.
Fifth connection holes 1216 connected to the third bellows exhaust passages 1710, 1720 may be provided in the third fixing portions 1210, 1220. Similarly, a sixth connection hole 1218 (see fig. 15) connected to the fourth bellows exhaust passages 1730 and 1740 may be provided in the fourth fixing portions 1230 and 1240.
On the other hand, the third bellows deaeration channels 1710, 1720 and the fourth deaeration channels 1730, 1740 may be symmetrically arranged in opposite directions with respect to the center portion of the fourth bellows 3420A, 3420B or the fifth bellows 4430A, 4430B, but the present invention is not limited thereto and may be appropriately modified.
For example, the third bellows exhaust channel 1710 and the second bellows exhaust channel 1730' may be disposed to be offset from each other with the center of the fourth bellows 3420A and 3420B or the fifth bellows 4430A and 4430B as a center, instead of being disposed on a straight line.
In the case where the third bellows exhaust channel 1710 and the second bellows exhaust channel 1730 'are disposed offset from each other, when exhaust is performed through the third bellows exhaust channel 1710 and the second bellows exhaust channel 1730', turbulence caused by exhaust flow is generated inside the fourth bellows 3420A, 3420B and the fifth bellows 4430A, 4430B, and exhaust can be performed more efficiently.
In another aspect, the third bellows exhaust passage 1710, 1720 and the fourth bellows exhaust passage 1730, 1740 can be connected to the chamber exhaust passage 810, 820 described above.
For example, the total number of the third and fourth bellows exhaust passages 1710, 1720 and 1730, 1740 may be set to correspond to the number of the chamber exhaust passages 810, 820, and the third and fourth bellows exhaust passages 1710, 1720 and 1730, 1740 may be connected to the chamber exhaust passages 810, 820, respectively.
Alternatively, in the case where the total number of the third and fourth bellows exhaust passages 1710, 1720 and 1730, 1740 is more than the number of the chamber exhaust passages 810, 820, the third and fourth bellows exhaust passages 1710, 1720 and 1730, 1740 may be appropriately connected to the chamber exhaust passages 810, 820 disposed at a close position. In this case, more than two bellows exhaust passages may be connected to one of the chamber exhaust passages 810, 820.
In another aspect, the third bellows vent channel 1710, 1720 and the fourth bellows vent channel 1730, 1740 can have a smaller cross-sectional area than the chamber vent channel 810, 820. By making the sectional areas of the third and fourth bellows exhaust passages 1710, 1720, 1730, 1740 small, the internal pressures of the third and fourth bellows exhaust passages 1710, 1720, 1730, 1740 can be made lower than the chamber exhaust passages 810, 820 to improve pumping efficiency.
On the other hand, fig. 12 shows an embodiment in which the third bellows exhaust passages 1710 and 1720 and the fourth bellows exhaust passages 1730 and 1740 are connected to the chamber exhaust passages 810 and 820, but the present invention is not limited thereto.
That is, the third bellows exhaust channel 1710, 1720 and the fourth bellows exhaust channel 1730, 1740 may not be connected to the chamber exhaust channel 810, 820, and the third bellows exhaust channel 1710, 1720, the fourth bellows exhaust channel 1730, 1740 and the chamber exhaust channel 810, 820 may be connected to respective independent pump sections (not shown), in which case at least one of the independent pump sections may have different pumping forces.
For example, the pumping force of a bellows pump section (not shown) connected to the third bellows exhaust channels 1710, 1720 and the fourth bellows exhaust channels 1730, 1740 and a chamber pump section (not shown) connected to the chamber exhaust channels 810, 820 may be adjusted differently.
When the pumping force of the bellows pump portion is made larger than the pumping force of the chamber pump portion, the gas or powder or the like inside the fourth bellows 3420A, 3420B and the fifth bellows 4430A, 4430B can be discharged more efficiently.
In addition, although not shown in the drawings, in the case where the third bellows exhaust passages 1710, 1720 and the fourth bellows exhaust passages 1730, 1740 are directly connected to the pump portion, the aforementioned structures of the chamber exhaust passages 810, 820 may be omitted. That is, in the case of discharging the gas or the like inside the chamber 100, when a large pumping capacity is not required, the gas inside the chamber 100 may be discharged using only the third bellows discharge passages 1710 and 1720 and the fourth bellows discharge passages 1730 and 1740.
In this case, the distance between the edge of the second through hole 127 and the outer surface of the base auxiliary support rods 3400A, 3400B is increased, the pumping efficiency of the third bellows exhaust passages 1710, 1720 and the fourth bellows exhaust passages 1730, 1740 is improved, and the gas and the like inside the chamber 100 can be more smoothly exhausted.
On the other hand, although not shown in the drawings, a bellows gas exhaust passage for exhausting gas from the inside of the fourth bellows 3420A, 3420B and the fifth bellows 4430A, 4430B may be connected to the right below the fifth bellows 4430A, 4430B through the second auxiliary plate 4440. The bellows exhaust channel is also connected in this case by a stationary second auxiliary plate 4440. With such a structure, the gas or the like inside the chamber 100 can be discharged through the bellows gas discharge passage that connects the second auxiliary plate 4440 therethrough via the aforementioned second penetration hole 127, the fourth bellows 3420A, 3420B, the communication holes 4710, 4720, and the fifth bellows 4430A, 4430B.
Fig. 15 is a side sectional view showing the exhaust flow inside the fourth bellows 3420A and the fifth bellows 4430A when the third bellows exhaust passage 1710 and the fourth bellows exhaust passage 1730 are provided.
Referring to fig. 15, gas, powder, or the like flowing from the inside of the chamber 100 into the fourth bellows 3420A through the second through hole 127 may be discharged through a third bellows discharge passage 1710 connected to the third fixing part 1210.
On the other hand, the gas or powder, etc. that cannot be removed through the third bellows exhaust passage 1710 and flow into the inside of the fifth bellows 4430A through the communication holes 4710, 4720 of the second elevating plate 3440A' can be discharged and removed through the fourth bellows exhaust passage 1730 connected to the second fixing part 1230.
On the other hand, fig. 16 is a side sectional view showing exhaust flow inside the fourth bellows 3420A and the fifth bellows 4430A when the third bellows exhaust passage 1710 and the fourth bellows exhaust passage 1730 are provided according to another embodiment. In fig. 16, the same reference numerals are used for the same components as those in fig. 15.
Referring to fig. 16, in the present embodiment, the sixth connection hole 1316 where the third bellows exhaust path 1710 and the third fixing portion 1210 are connected may be at a predetermined angle θ3Is formed obliquely.
For example, the sixth connection hole 1316 may be formed to be inclined upward or toward the second through hole 127 as shown in the drawings.
When the sixth connection hole 1316 has the aforementioned structure, the gas or powder flowing into the inside of the fourth bellows 3420A through the second through hole 127 can be more effectively discharged and removed through the sixth connection hole 1316 and the third bellows exhaust passage 1710.
In addition, the seventh connection hole 1318, through which the fourth bellows exhaust passage 1730 and the second fixing portion 1230 are connected, may be formed at a predetermined angle θ4Is formed obliquely.
For example, the seventh connection hole 1318 may be formed to be inclined downward or toward the second auxiliary plate 4440 as shown in the drawing.
When the seventh connection hole 1318 has the aforementioned structure, the powder and the like that flows into the inside of the fifth bellows 4430A through the communication holes 4710, 4720 and accumulates on the upper surface of the second auxiliary plate 4440 can be more effectively discharged and removed through the seventh connection hole 1318 and the fourth bellows air discharge passage 1730.
In addition, although not shown in the drawings, the seventh connection hole 1318 may be formed to be inclined upward. In this case, the gas or powder, etc., which flows into the inside of the fifth bellows 4430A through the communication holes 4710 and 4720 may be immediately discharged and removed through the seventh connection hole 1318 and the fourth bellows exhaust passage 1730.
On the other hand, fig. 17 is a side sectional view showing a substrate processing apparatus 5000 according to yet another embodiment. The same reference numerals are used for the same components as in fig. 9.
Referring to fig. 17, the substrate processing apparatus 5000 may further include a mask 5600 placed above the substrate W, mask support rods 5620A and 5620B penetrating through a through hole formed in a bottom surface of the chamber 100 to support the mask 5600 and move the mask 5600 up and down, third bellows units 5410A and 5410B surrounding the mask support rods 5620A and 5620B outside the chamber 100 and sealing the chamber 100, and at least one fifth bellows exhaust passage 1750 and 1760 connected to the third bellows units 5410A and 5410B and exhausting gas.
That is, in the substrate processing apparatus 5000 according to the present embodiment, when a process such as a vapor deposition process is performed on the substrate W, the mask 5600 positioned above the substrate may be used in order to vapor deposit a substance deposited on the substrate W in a predetermined pattern.
In this case, in order to move the mask 5600 up and down, mask support rods 5620A and 5620B which penetrate through third through holes 128 formed in the bottom surface of the chamber 100 and move up and down, and a third lifting plate 5490 which is connected to lower ends of the mask support rods 5620A and 5620B and moves up and down may be provided.
The plurality of mask support rods 5620A and 5620B support the bottom surface of the mask 5600. At this time, the lower end portions of the mask support rods 5620A and 5620B extend through the third through hole 128 of the base 121 of the chamber 100, and are sealed by the third bellows units 5410A and 5410B outside the chamber 100.
Specifically, the third bellows units 5410A and 5410B may include sixth bellows 5480A and 5480B that surround the mask support rods 5620A and 5620B and seal the chamber 100, and a third lifting plate 5490 that is connected to lower ends of the sixth bellows 5480A and 5480B and lower ends of the mask support rods 5620A and 5620B and moves up and down.
Therefore, the lower ends of the mask support rods 5620A and 5620B and the lower ends of the sixth bellows 5480A and 5480B may be connected to the third lifting plate 5490, and thus, the vacuum state inside the chamber 100 may be maintained.
In this case, at least one fifth bellows exhaust channel 1750, 1760 that is connected to the third bellows unit 5410A, 5410B and discharges gas may be provided.
Specifically, fifth fixing portions 1260A and 1260B may be provided between the upper portions of the sixth bellows 5480A and 5480B and the bottom surface of the chamber 100, and at least one fifth bellows exhaust passage 1750 and 1760 connected to the fifth fixing portions 1260A and 1260B to exhaust gas may be provided.
At this time, upper ends of the fifth fixing portions 1260A and 1260B are connected to the bottom surface of the chamber 100, and lower ends of the fifth fixing portions 1260A and 1260B are connected to upper ends of the sixth bellows 5480A and 5480B. At this time, the lower ends of the sixth bellows 5480A and 5480B are connected to the third lifting plate 5490.
The structure and effects of the fifth bellows exhaust passages 1750, 1760 are similar to those of the third bellows exhaust passages 1710, 1720 described above in the embodiment of fig. 1, and therefore, redundant description is omitted.
On the other hand, fig. 17 shows only a structure in which the fifth fixing portions 1260A and 1260B are connected to the upper ends of the sixth bellows 5480A and 5480B, and the fifth bellows exhaust passages 1750 and 1760 are connected to the fifth fixing portions 1260A and 1260B, but the present invention is not limited thereto.
For example, the third bellows units 5410A and 5410B may further include a sixth independent fixing portion (not shown) and a sixth bellows exhaust passage (not shown) connected to the sixth fixing portion at a lower side, similarly to the embodiment of fig. 12. Alternatively, the third bellows units 5410A and 5410B may be provided with only a sixth independent fixing portion (not shown) and a sixth bellows exhaust passage (not shown) connected to the sixth fixing portion at the lower side, without omitting the fifth fixing portion.
Referring to fig. 9 and 17, in the substrate processing apparatus, the susceptor 310 is configured to move up and down by a susceptor support rod 320. At this time, the susceptor support rod 320 extends through the first through hole 124 of the base 121 of the chamber 100, and is sealed by a susceptor bellows 330 below the chamber 100.
In this case, a bellows exhaust passage (not shown) for exhausting air through the first through hole 124 through which the base support rod 320 passes may be further provided, similarly to the embodiment of fig. 1 described above. The bellows exhaust passage may be configured to exhaust gas through the first through hole 124 and the base bellows 330, for example. That is, the structure of the first bellows unit 460 described in the embodiment of fig. 1 may be added to the embodiments of fig. 9 and 17.
The substrate processing apparatus according to the present invention may further include an exhaust passage for exhausting gas through another hole (not shown) formed in the base 121 of the chamber 100, in addition to the holes through which the susceptor support rods, the susceptor auxiliary support rods, and the mask support rods are inserted. In this case, when the bellows unit is provided at the hole, a fixing portion (not shown) may be provided at least one of the upper and lower sides of the bellows unit to connect the exhaust passage, similarly to the aforementioned embodiment.
While the present invention has been described with reference to the preferred embodiments, those skilled in the art will be able to apply various modifications and alterations to the present invention without departing from the spirit and scope of the present invention as set forth in the following claims. Therefore, all the modifications and variations including the constituent elements of the claims of the present invention are considered to be included in the technical scope of the present invention.
Industrial applicability
According to the present invention having the foregoing structure, the powder inside the bellows connected to the bottom surface of the chamber can be removed, so that it is possible to prevent the powder from scattering and particles from adhering to the thin film when the base or the mask moves up and down.
In addition, according to the present invention, when the bellows exhaust passage is connected, the bellows exhaust passage is connected with the fixing portion extended from the bottom surface of the chamber to be immovably fixed, so that it is possible to extend the life of the bellows exhaust passage and reduce damage and breakage.

Claims (12)

1. A substrate processing apparatus is characterized by comprising:
a chamber accommodating a substrate and providing a processing space for the substrate;
at least one support rod which penetrates at least one through hole formed on the bottom surface of the chamber and moves up and down;
a bellows unit surrounding the support rod at an outer side of the chamber and sealing the chamber; and
at least one bellows exhaust passage connected to the bellows unit and exhausting gas.
2. The substrate processing apparatus according to claim 1,
the support rod is composed of at least one of a base support rod penetrating a first through hole formed in the bottom surface of the chamber and connected to a base for supporting the substrate, a base auxiliary support rod penetrating a second through hole formed in the bottom surface of the chamber and supporting the base, and a mask support rod supporting a mask placed above the substrate and penetrating a third through hole formed in the bottom surface of the chamber.
3. The substrate processing apparatus according to claim 2,
when the support rod is constituted by the base support rod, the bellows unit is constituted by a first bellows unit that surrounds the base support rod and seals the chamber, the bellows exhaust passage is constituted by a first bellows exhaust passage that exhausts gas from the first bellows unit,
the first bellows unit includes:
a first bellows surrounding the base support rod and sealing the chamber; and
and a first lifting plate connected to a lower end of the first bellows and a lower end of the base support rod and moving up and down.
4. The substrate processing apparatus according to claim 3,
the first bellows unit further includes:
a first fixing portion extending downward outside the first through hole, the first bellows being connected to a lower end portion of the first fixing portion,
the first bellows exhaust passage is connected to the first fixing portion.
5. The substrate processing apparatus according to claim 3 or 4,
the first bellows unit further includes:
a second bellows connected to a bottom surface of the first lifting plate; and
and a first auxiliary plate connected to a lower end portion of the second bellows and supported by a first support rod connected to a lower portion of the chamber.
6. The substrate processing apparatus according to claim 5,
the first bellows unit further includes:
a second fixing portion connecting a lower end portion of the second bellows and the first auxiliary plate; and
at least one second bellows exhaust passage connected to the second fixing portion and exhausting gas,
and a first communication hole for communicating the first corrugated pipe and the second corrugated pipe is formed in the first lifting plate.
7. The substrate processing apparatus according to claim 5,
the first bellows unit further includes:
a third bellows connecting the first lifting plate and the first auxiliary plate to each other on an inner side of the second bellows,
at least one fluid duct or at least one electric wire for temperature adjustment of the base passes through the inside of the third bellows from the lower end of the base support rod, penetrates through the first auxiliary plate, and extends downward.
8. The substrate processing apparatus according to claim 2,
when the support rod is constituted by the base auxiliary support rod, the bellows unit is constituted by a second bellows unit that surrounds the base auxiliary support rod and seals the chamber, the bellows exhaust passage is constituted by a third bellows exhaust passage that exhausts gas from the second bellows unit,
the second bellows unit includes:
a fourth bellows surrounding the base auxiliary support rod and sealing the chamber; and
and a second lifting plate connected to the lower end of the fourth bellows and the lower end of the auxiliary support rod of the base and moving up and down.
9. The substrate processing apparatus according to claim 8,
the second bellows unit further includes:
a third fixing portion extending downward outside the second through hole, the fourth bellows being connected to a lower end portion of the third fixing portion,
the third bellows exhaust passage is connected to the third fixing portion.
10. The substrate processing apparatus according to claim 8 or 9,
the second bellows unit further includes:
a fifth bellows connected to a bottom surface of the second lifting plate; and
and a second auxiliary plate connected to a lower end portion of the fifth bellows and supported by a second support rod connected to a lower portion of the chamber.
11. The substrate processing apparatus according to claim 10,
the second bellows unit further includes:
a fourth fixing portion connecting a lower end portion of the fifth bellows and the second auxiliary plate; and
at least one fourth bellows exhaust passage connected to the fourth fixing portion and exhausting gas,
a second communication hole for communicating the fourth bellows and the fifth bellows is formed in the second lifter plate.
12. The substrate processing apparatus according to claim 2,
when the support rod is constituted by the mask support rod, the substrate processing apparatus further includes:
a third bellows unit surrounding the mask support bar at an outer side of the chamber and sealing the chamber; and
and at least one fifth bellows exhaust passage connected to the third bellows unit and discharging gas.
CN201980060603.1A 2018-10-30 2019-10-01 Substrate processing apparatus Pending CN112740387A (en)

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KR1020180130385A KR102119396B1 (en) 2018-10-30 2018-10-30 Substrate processing apparatus
KR10-2018-0130385 2018-10-30
KR1020180146501A KR102121799B1 (en) 2018-11-23 2018-11-23 Substrate processing apparatus
KR10-2018-0146501 2018-11-23
PCT/KR2019/012789 WO2020091239A1 (en) 2018-10-30 2019-10-01 Substrate processing apparatus

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US5266119A (en) * 1991-05-13 1993-11-30 Mitsubishi Denki Kabushiki Kaisha Vacuum sealing mechanism for a semiconductor device manufacturing apparatus having inner and outer bellows
JPH08241918A (en) * 1995-03-06 1996-09-17 Dainippon Screen Mfg Co Ltd Substrate treatment device
JPH11302829A (en) * 1998-04-16 1999-11-02 Ebara Corp Vacuum chamber contamination preventive apparatus for vacuum apparatus
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