CN112735944A - Nitrogen polar surface GaN material and manufacturing method thereof - Google Patents
Nitrogen polar surface GaN material and manufacturing method thereof Download PDFInfo
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- CN112735944A CN112735944A CN202110005849.8A CN202110005849A CN112735944A CN 112735944 A CN112735944 A CN 112735944A CN 202110005849 A CN202110005849 A CN 202110005849A CN 112735944 A CN112735944 A CN 112735944A
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000000463 material Substances 0.000 title claims abstract description 63
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims abstract description 3
- 230000006911 nucleation Effects 0.000 claims description 14
- 238000010899 nucleation Methods 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 229910052706 scandium Inorganic materials 0.000 claims description 7
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 53
- 239000004065 semiconductor Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001534 heteroepitaxy Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention discloses a nitrogen polar surface GaN material and a manufacturing method thereof, and mainly solves the problems of poor crystallization quality, rough surface appearance, high background carrier concentration, complex manufacturing process flow and the like of the conventional nitrogen polar surface GaN material. The material structure comprises a substrate, a ScN nucleating layer and a nitrogen polar surface GaN epitaxial layer from bottom to top. The manufacturing steps are as follows: growing a ScN nucleating layer with the thickness of 10nm-100nm on a substrate by using a molecular beam epitaxy method; and (3) growing a GaN epitaxial layer on the ScN nucleating layer by using a molecular beam epitaxy method to finish the material preparation. The material has the advantages of high crystallization quality, smooth surface appearance, low background carrier concentration, simple growth process and high process repeatability and consistency, and can be used for manufacturing high electron mobility transistors and microwave and millimeter wave monolithic integrated circuits.
Description
Technical Field
The invention belongs to the field of semiconductor material growth, and particularly relates to a nitrogen polar surface GaN semiconductor material which can be used for manufacturing a high electron mobility transistor and a microwave millimeter wave monolithic integrated circuit.
Background
The III group nitride semiconductor material represented by GaN has important application value in the fields of high frequency, high power, high efficiency, high temperature resistance, high pressure resistance, radiation resistance and the like. A heterojunction interface formed by the nitride semiconductor material has two-dimensional electron gas with high area density and high mobility, is very suitable for preparing a high-electron-mobility transistor, and is applied to a solid-state microwave power amplifier and a microwave millimeter wave monolithic integrated circuit. At present, the research on GaN semiconductor materials and devices mainly focuses on gallium polar planes, because the gallium polar plane materials are easy to realize high-quality growth, and the device process based on the gallium polar plane materials is mature. However, nitrogen polar plane GaN materials have many natural advantages in increasing the operating frequency and output power of the device. The nitrogen polar surface GaN heterojunction barrier layer is arranged below the channel layer to form a natural back barrier, so that the two-dimensional electron confinement property can be improved without being limited by the proportional reduction rule of the device gate length and the barrier layer thickness. Meanwhile, the GaN channel layer material is positioned on the top of the epitaxial material, so that low ohmic contact resistance is easy to realize.
The growth of high-quality nitrogen polar surface GaN material is one of the main approaches for improving the performance of GaN-based electronic devices. Because the nitrogen polar surface gallium nitride single crystal substrate material has small size and high price, the nitrogen polar surface GaN material is usually obtained on other substrate materials such as SiC and the like by adopting the heteroepitaxy of the metal organic chemical vapor deposition technology. The GaN material structure with the nitrogen polar surface grown by the conventional method is shown in FIG. 1. The GaN substrate comprises a substrate, an AlN nucleating layer, a GaN buffer layer and a GaN material with a nitrogen polar surface from bottom to top. This material has the following disadvantages:
firstly, high-density dislocation defects are generated in the process of heteroepitaxy nitrogen polar surface GaN materials, so that the reliability of devices is degraded;
secondly, the gallium nitride material has high control difficulty of the polarity, polarity inversion is easy to occur, and gallium polar GaN material appears;
thirdly, the background carrier concentration of the grown nitrogen polar GaN material is high, and a body leakage channel is formed to reduce the breakdown voltage of the device;
fourthly, the grown nitrogen polar GaN material has poor crystal quality, rough and unsmooth surface appearance and more pit-shaped defects;
fifthly, the heteroepitaxy nitrogen polar GaN material needs to adopt a beveled substrate, so that the material epitaxy cost is increased;
sixthly, the metal organic chemical vapor deposition technology needs nitrogen-rich growth conditions, and migration capacity and diffusion length of metal atoms on the growth surface of the film are hindered.
And the GaN material on the nitrogen polar surface needs to adopt Fe doping to compensate background carriers, so that the process control difficulty is increased.
And eighthly, the growth temperature and the air flow switching are required to be changed when the AlN nucleating layer and the GaN buffer layer are grown, and the growth process needs a short interval, which can increase the combination of background doping impurities.
Disclosure of Invention
The invention aims to provide a nitrogen polar surface GaN material and a manufacturing method thereof aiming at the defects of the prior art, so as to improve the solving quality and the surface appearance of the nitrogen polar surface GaN material and reduce the background carrier concentration and the process flow complexity.
The technical scheme of the invention is realized as follows:
1. the utility model provides a nitrogen polar surface GaN material, includes substrate, nucleation layer and GaN epitaxial layer from bottom to top, its characterized in that: the nucleating layer adopts ScN, and the thickness of the nucleating layer is 10nm-100 nm;
the nucleation layer and the GaN epitaxial layer are grown by adopting a molecular beam epitaxy technology;
the substrate is made of any one of a sapphire material, a Si material and a SiC material.
2. A method for manufacturing a GaN material with a nitrogen polar surface is characterized by comprising the following steps:
1) on the substrate, molecular beam epitaxy method is used to grow scandium at 650-720 deg.C, nitrogen flow of 2.3sccm, and scandium beam equilibrium vapor pressure of 2.0 × 10-8Torr-3.0×10-8Growing a 10nm-100nm ScN nucleating layer under the condition that the power of a nitrogen radio frequency source is 375W;
2) by molecular beam epitaxy method, at 650-720 deg.C, nitrogen flow rate of 2.3sccm, and gallium beam equilibrium vapor pressure of 5.0 × 10-7Torr-8.0×10-7And (5) growing a GaN epitaxial layer on the ScN nucleating layer under the process condition that the power of a nitrogen radio frequency source is 375W, thereby finishing the preparation of the material.
Compared with the prior art, the invention has the following advantages:
1. the invention adopts ScN as a nucleating layer, so that the polarity regulation and the nitrogen polarity surface GaN epitaxial layer can be effectively realized.
2. The invention adopts ScN as a nucleating layer, so that unintentional doping impurities at a heteroepitaxial interface can be effectively adsorbed and captured, and the background carrier concentration of the GaN material on the nitrogen polar surface is reduced.
3. The invention adopts molecular beam epitaxy technology to grow the GaN epitaxial layer of the nitrogen polar surface, is easy to enhance the migration capability and diffusion length of metal atoms on the growth surface of the film under the gallium-rich condition, and can improve the crystallization quality and surface appearance of the GaN material of the nitrogen polar surface.
4. The substrate can adopt a conventional non-chamfered substrate, so that the material epitaxy cost is reduced.
5. In the invention, the ScN nucleating layer and the GaN epitaxial layer grow uninterruptedly, and the absorption of unintended doped impurities is reduced.
6. According to the invention, the GaN material on the nitrogen polar surface does not need to adopt Fe doping to compensate background carriers during growth, the growth process is simple, the control difficulty is low, and the process repeatability and consistency are high.
Drawings
FIG. 1 is a schematic structural diagram of a conventional growing nitrogen polar plane GaN material;
FIG. 2 is a schematic structural diagram of the present invention using a ScN nucleation layer to grow a GaN material with a nitrogen polar surface;
FIG. 3 is a schematic flow chart of the present invention for fabricating a GaN material with a nitrogen polar surface.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Referring to fig. 2, the nitrogen polar plane GaN material of the present invention, from bottom to top, includes a substrate 1, a nucleation layer 2, and a GaN epitaxial layer 3. Wherein the nucleation layer adopts ScN with the thickness of 10nm-100 nm; growing the nucleating layer and the GaN epitaxial layer by adopting a molecular beam epitaxy technology; the substrate is made of any one of a sapphire material, a Si material and a SiC material; the thickness of the GaN epitaxial layer of the nitrogen polar surface is determined according to actual requirements.
Referring to fig. 3, the nitrogen polar plane GaN material of the present invention is prepared in the following three examples.
Example one, nitrogen polar plane GaN material on SiC substrate using 10nm thick ScN nucleation layer was epitaxial.
Step one, the ScN nucleation layer is epitaxial, as shown in fig. 3 (b).
A ScN nucleation layer with a thickness of 10nm was epitaxially grown on the SiC substrate using molecular beam epitaxy.
The epitaxial ScN nucleating layer adopts the following process conditions: the temperature is 720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of scandium beam is 3.0 × 10-8Torr, nitrogen gas RF source power was 375W.
And step two, extending a GaN epitaxial layer with a nitrogen polar surface, as shown in figure 3 (c).
And (3) epitaxial growing a nitrogen polar surface GaN epitaxial layer on the ScN nucleating layer by using a molecular beam epitaxy technology.
The process conditions adopted by the epitaxial nitrogen polar surface GaN epitaxial layer are as follows: the temperature is 720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of the gallium beam is 8.0 multiplied by 10-7Torr, nitrogen gas RF source power was 375W.
In the second embodiment, a nitrogen polar plane GaN material on a Si substrate using a 100nm thick ScN nucleation layer was deposited.
The temperature was set at 650 deg.C, the nitrogen flow was 2.3sccm, and the equilibrium vapor pressure of scandium beam was 2.0X 10-8Torr, the power of nitrogen gas radio frequency source is 375W, and a ScN nucleating layer with the thickness of 100nm is deposited on the Si substrate by using the molecular beam epitaxy technology.
And 2, depositing a nitrogen polar surface GaN epitaxial layer by using a molecular beam epitaxy technology, as shown in a figure 3 (c).
Setting the temperature at 650 deg.C, nitrogen flow at 2.3sccm, and balance vapor pressure of gallium beam at 5.0 × 10-7And (3) carrying out the process condition that the power of a nitrogen radio frequency source is 375W by Torr, and depositing a nitrogen polar surface GaN epitaxial layer on the ScN nucleating layer by using a molecular beam epitaxy technology.
Example three, a nitrogen polar plane GaN material on a sapphire substrate using a 60nm thick ScN nucleation layer was grown.
Step a, growing a ScN nucleation layer, as shown in fig. 3 (b).
Molecular beam epitaxy is adopted, and the temperature is 680 ℃, the nitrogen flow is 2.3sccm, and the scandium beam equilibrium vapor pressure is 2.5 multiplied by 10-8And (3) growing a 60nm thick ScN nucleating layer on the sapphire substrate under the process condition that the power of a nitrogen gas radio frequency source is 375W.
And step B, growing a nitrogen polar surface GaN epitaxial layer, as shown in figure 3 (c).
Molecular beam epitaxy technology is used, the temperature is 680 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of gallium beam is 6.8 multiplied by 10-7And (5) growing a nitrogen polar surface GaN epitaxial layer on the ScN nucleating layer under the process condition that the power of a nitrogen radio frequency source is 375W.
The foregoing description is only three specific examples of the present invention and is not intended to limit the invention, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principle and structure of the invention after understanding the content and principle of the invention, but the modifications and variations will fall within the scope of the appended claims.
Claims (4)
1. The utility model provides a nitrogen polar surface GaN material, from bottom to top, includes substrate, nucleation layer and GaN epitaxial layer, its characterized in that: the nucleating layer adopts ScN, and the thickness of the nucleating layer is 10nm-100 nm.
2. The material of claim 1, wherein: and the nucleation layer and the GaN epitaxial layer are grown by adopting a molecular beam epitaxy technology.
3. The material of claim 1, wherein: the substrate is made of any one of a sapphire material, a Si material and a SiC material.
4. A method for manufacturing a GaN material with a nitrogen polar surface is characterized by comprising the following steps:
1) on the substrate, molecular beam epitaxy method is used to grow scandium at 650-720 deg.C, nitrogen flow of 2.3sccm, and scandium beam equilibrium vapor pressure of 2.0 × 10-8Torr-3.0×10-8Growing a 10nm-100nm ScN nucleating layer under the condition that the power of a nitrogen radio frequency source is 375W;
2) by molecular beam epitaxy method, at 650-720 deg.C, nitrogen flow rate of 2.3sccm, and gallium beam equilibrium vapor pressure of 5.0 × 10-7Torr-8.0×10-7And (5) growing a GaN epitaxial layer on the ScN nucleating layer under the process condition that the power of a nitrogen radio frequency source is 375W, thereby finishing the preparation of the material.
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|---|---|---|---|---|
| US20100127353A1 (en) * | 2008-11-26 | 2010-05-27 | S.O.I.Tec Silicon On Insulator Technologies, S.A. | Strain engineered composite semiconductor substrates and methods of forming same |
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2021
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