CN116130336A - Two-dimensional electron gas heterojunction structure based on nitride material and nitrogen terminal diamond and preparation method thereof - Google Patents
Two-dimensional electron gas heterojunction structure based on nitride material and nitrogen terminal diamond and preparation method thereof Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 193
- 239000010432 diamond Substances 0.000 title claims abstract description 193
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 title claims abstract description 63
- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 35
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 58
- -1 boron aluminum nitrogen Chemical compound 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims description 59
- 230000008569 process Effects 0.000 claims description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 7
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a two-dimensional electron gas heterojunction structure based on nitride materials and nitrogen terminal diamond and a preparation method thereof, comprising the following steps: step one, obtaining a diamond layer; step two, carrying out nitrogen terminal treatment on the surface of the diamond layer to form a nitrogen terminal surface; and thirdly, epitaxially growing monocrystalline aluminum nitride or boron aluminum nitrogen of the Al-surface polar wurtzite structure on the surface of the nitrogen terminal to form an aluminum nitride epitaxial layer or boron aluminum nitrogen epitaxial layer so as to form a two-dimensional electron gas heterojunction structure based on the nitrogen terminal diamond. The method can form a high-quality aluminum nitride/nitrogen terminal diamond heterojunction or boron aluminum nitrogen/nitrogen terminal diamond heterojunction, can generate two-dimensional electron gas with high electron mobility and high carrier concentration, and remarkably improves the application potential of the heterojunction base device in the aspects of high voltage, high frequency and high power.
Description
Technical Field
The invention belongs to the technical field of semiconductor processes, and particularly relates to a two-dimensional electron gas heterojunction structure based on nitride materials and nitrogen terminal diamond and a preparation method thereof.
Background
The diamond belongs to a new generation ultra-wide band-gap semiconductor material, has the advantages of large band gap, high carrier mobility, high heat conductivity and the like, and has great advantages and potential in the application of new generation high-voltage, high-power, high-temperature-resistant and radiation-resistant electronic devices. The p/n type conductivity with simple preparation process and excellent performance is important to the application potential of the diamond material. As with most semiconductor materials currently in use, diamond must be doped in some form to introduce mobile carriers of sufficiently high density. However, the strong covalent bonds and close-packed crystal structure of diamond are the sources of their excellent material properties, but also lead to the difficulty of room temperature activation of their bulk doping. Boron, the most successful acceptor impurity in diamond p-type doping, still has an activation energy as high as 0.37eV, resulting in a carrier concentration that can ionize at room temperature of only a few thousandths of the boron doping concentration. In addition, as the boron dopant concentration increases, the hole mobility of the doped diamond may significantly decrease, and heavy boron doping may also negatively impact the diamond crystal quality, thereby affecting device performance. Whereas for n-doped diamond, the most common donor impurities arePhosphorus, which has an activation energy of up to 0.6eV, has a lower carrier ionization rate at room temperature. When the doping concentration of phosphorus reaches 6.8X10 16 cm -3 At room temperature, the activated electron concentration is only 10 11 cm -3 . The difficulty of doping diamond semiconductors has severely limited their development and application in the field of electronic devices.
In recent years, it has been experimentally widely observed that hydrogen terminated diamond surfaces can exhibit p-type conductivity at room temperature. The diamond is treated in hydrogen plasma to form a hydrogen terminal diamond surface with the surface covered by C-H bonds, and after the diamond is exposed to air, a two-dimensional hole gas (2 DHG) accumulation layer can be formed below the diamond surface by about 10nm due to transfer doping. The concentration of 2DHG was 10 12 -10 14 cm -2 On the order of several tens to 200cm in mobility 2 Vs. A Field Effect Transistor (FET) based on hydrogen terminated diamond p-type conductivity has become the mainstream of diamond electronics research, and has achieved a maximum output current density of 1.3A/mm, a cut-off frequency of 70GHz, a breakdown voltage of 2608v, and an output power density of 4.2W/mm at 2 GHz.
In view of the difficulty in doping ionization of the diamond n-type body, the p-type surface conductivity has been significantly improved, and the realization of two-dimensional electron gas (2 DEG) surface conductivity based on the diamond heterojunction can provide a new idea for the diamond n-type conductivity. The two-dimensional electron gas of the diamond-based heterojunction interface can be ionized by donor impurities of the barrier layer to provide electrons, and can also be provided by the principle similar to nitride heterojunction, namely the polarization effect of the barrier layer and surface state ionization. Therefore, the key problems that the doping ionization rate of the diamond n-type body is extremely low and the high conductivity at room temperature is difficult to form can be overcome, and the current density of the diamond device is greatly improved. First principles of the present invention have shown that by inducing channel charge with gate voltage, a diamond/cubic boron nitride (c-BN) heterojunction interface can be formed up to 5 x 10 12 cm -2 Can be used for preparing high-performance High Electron Mobility Transistors (HEMTs).
However, in actual device fabrication, there are still some key issues to be addressed with diamond-based heterojunctions based on two-dimensional electron gas n-type conductance. If the diamond material with ultra-wide forbidden band (5.5 eV) is used as the channel layer for accommodating the two-dimensional electron gas, and the other material is used as the barrier layer, the forbidden band width of the barrier layer is larger than that of diamond, and the ultra-wide forbidden band semiconductor materials such as boron aluminum nitride (AlN) and Boron Nitride (BN) can meet the requirement.
The two materials forming the heterojunction also need to form a band step suitable for transporting two-dimensional electron gas in diamond, namely, a potential well is formed on one side of the diamond and a potential barrier is formed on one side of the barrier layer; in the case of barrier layer doping ionization to provide electrons to form a two-dimensional electron gas, the barrier height should be greater than the ionization energy of the barrier layer donor impurities, enabling ionization of the donor impurities.
Aluminum nitride belongs to III-V group compounds, is a wurtzite structure compound semiconductor of hexagonal system, has large forbidden bandwidth (6.2 eV), high breakdown field strength (14 MV/cm) and high thermal conductivity (3.0W/cm.K), and is especially suitable for high-temperature and high-power electronic devices. Single crystal aluminum nitride has a lattice constant a=0.3114 nm, c= 0.14947nm, similar to that of diamond (a=0.357 nm), and a thermal expansion coefficient (4.5 ppm/K) very close to that of single crystal diamond (4.2 ppm/K), theoretically forming a high quality aluminum nitride/diamond heterojunction with diamond.
However, since the crystal structure of aluminum nitride (hexagonal crystal structure) is different from the crystal structure of diamond (cubic crystal structure), the lattice constant is also different from that of diamond, if conventional process (such as magnetron sputtering) is adopted to deposit aluminum nitride on diamond, aluminum nitride tends to be polycrystalline due to serious lattice mismatch, so that dangling bonds are easy to generate, a large number of interface states are introduced, high-quality heterojunction interface is difficult to obtain, and even if two-dimensional electron gas is generated, high carrier concentration and mobility are difficult to realize, thereby influencing the performance of the device. The heterojunction interface formed by conventional hydrogen terminated diamond and aluminum nitride is not suitable for forming two-dimensional electron gas on the diamond side. Therefore, how to prepare a high-quality heterojunction structure of two-dimensional electron gas n-type conductivity based on a diamond substrate is still a problem to be solved.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a two-dimensional electron gas heterojunction structure based on nitride materials and nitrogen-terminated diamond and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
a first aspect of an embodiment of the present invention provides a method for preparing a two-dimensional electron gas heterojunction structure based on a nitride material and a nitrogen-terminated diamond, including the steps of:
step one, obtaining a diamond layer;
wherein the diamond layer is a single crystal diamond material or a polycrystalline diamond material;
step two, carrying out nitrogen terminal treatment on the surface of the diamond layer to form a nitrogen terminal surface;
step three, epitaxially growing monocrystalline aluminum nitride or boron aluminum nitrogen of an Al-surface polar wurtzite structure on the surface of the nitrogen terminal to form an aluminum nitride epitaxial layer or boron aluminum nitrogen epitaxial layer so as to form a two-dimensional electron gas heterojunction structure based on the nitrogen terminal diamond; when boron aluminum nitrogen is epitaxially grown, the boron and aluminum components of the boron aluminum nitrogen epitaxial layer are generated by regulating and controlling the ratio of a boron source to an aluminum source in the growth process of the boron aluminum nitrogen;
when the diamond is a single crystal diamond material, the crystal orientation is (111) or
When the crystal orientation of the diamond layer is (111), the crystal orientation of the aluminum nitride epitaxial layer is (0001); when the crystal orientation of the diamond layer is (01_1), the crystal orientation of the aluminum nitride epitaxial layer is +.>
When the diamond layer is a polycrystalline diamond material, donor impurity doping is performed when single crystal aluminum nitride or boron aluminum nitrogen is epitaxially grown.
In one embodiment of the present invention, the nitrogen termination process in the second step employs an MBE process, an RIE process, or an ICP process.
In one embodiment of the present invention, the thickness of the aluminum nitride epitaxial layer or the boron aluminum nitrogen epitaxial layer is 1 to 30nm.
A second aspect of the embodiment of the present invention provides a two-dimensional electron gas heterojunction structure based on a nitride material and a nitrogen-terminated diamond, which is prepared by the preparation method according to the first aspect of the embodiment of the present invention, and includes: the diamond layer, the nitrogen terminal surface positioned on the diamond layer, and the aluminum nitride epitaxial layer or the boron aluminum nitrogen epitaxial layer of the Al surface polar wurtzite structure positioned on the nitrogen terminal surface;
wherein the diamond layer is a single crystal diamond material or a polycrystalline diamond material;
when the diamond is a single crystal diamond material, the crystal orientation is (111) or
When the crystal orientation of the diamond layer is (111), the crystal orientation of the aluminum nitride epitaxial layer is (0001); the crystal orientation of the diamond layer is +.>
The crystal orientation of the aluminum nitride epitaxial layer is +.>
When the diamond layer is a polycrystalline diamond material, the aluminum nitride epitaxial layer or the boron aluminum nitride epitaxial layer is an epitaxial layer with donor doping.
The invention has the beneficial effects that:
1. the interface regulation and control means is utilized to carry out nitrogen terminal treatment on the surface of the diamond layer, so that the surface state of the diamond can be reduced, the surface energy state of the diamond can be changed, the atomic bonding between the diamond and aluminum nitride or boron aluminum nitrogen material is facilitated, the nucleation density of the boron aluminum nitrogen epitaxial layer on the diamond surface is improved, and the novel high-quality wide forbidden band heterojunction of the diamond is formed.
2. The nitrogen terminal treatment changes the electron affinity of the diamond surface, thereby regulating and controlling the energy band structure of the diamond surface, leading the energy band structure of the diamond surface and aluminum nitride or boron aluminum nitrogen to form a heterojunction energy band structure to generate an electron potential well, and through the first principle and X-ray photoelectron spectroscopy analysis (XPS) band order calculation, the aluminum nitride/nitrogen terminal diamond heterojunction formed by the nitrogen terminal diamond and aluminum nitride is higher than the aluminum nitride conduction band of the nitrogen terminal diamond by 0.54eV. Thereby an electron potential well that facilitates 2DEG transport can be realized.
3. The single crystal diamond layer is selected, and 2DEG can be formed on one side of the diamond of the heterojunction interface through the polarization effect between the diamond layer and the aluminum nitride or boron aluminum nitrogen epitaxial layer of the Al surface polar wurtzite structure; the polycrystalline diamond layer is selected, and a 2DEG can be formed on one side of the diamond of the heterojunction interface by utilizing the charge transfer effect between the doped aluminum nitride or boron aluminum nitrogen epitaxial layer and the diamond; and by combining the terminal treatment process, the band-step regulation and control of the heterojunction interface are realized, and an electron potential well beneficial to 2DEG transportation is formed.
4. The heterostructure is realized by adopting polar material aluminum nitride or boron aluminum nitrogen, and on the basis of realizing band-order regulation by utilizing terminal treatment, the 2DEG with high electron mobility and high carrier concentration can be generated in the aluminum nitride/diamond or boron aluminum nitrogen/diamond heterojunction through the polarization effect of the material.
5. The aluminum nitride and the diamond are used as ultra-wide band gap semiconductor materials with high breakdown field strength and high thermal conductivity, and compared with the traditional heterojunction materials, the aluminum nitride/nitrogen terminal diamond heterojunction formed by the aluminum nitride and the diamond can remarkably improve the application potential of the heterojunction base device in the aspects of high voltage, high frequency and high power.
6. The boron aluminum nitrogen epitaxial layer is adopted, the regulation and control of the lattice constant of the boron aluminum nitrogen epitaxial layer can be realized by regulating the components of the ternary compound, the lattice mismatch rate of the boron aluminum nitrogen epitaxial layer and diamond is further reduced, the lattice distortion of the boron aluminum nitrogen in the epitaxial process is effectively relieved, the surface state and dangling bond at the formed heterojunction interface are reduced, and the quality of the boron aluminum nitrogen/nitrogen terminal diamond heterojunction is improved.
7. The heterostructure is realized by adopting a ternary compound boron aluminum nitrogen with variable components, the band structure of the material is regulated and controlled by changing the components of the ternary compound, and the band-step regulation and control of a heterojunction interface are further realized by combining a terminal treatment process, so that an electron potential well beneficial to 2DEG transportation is realized.
8. The boron aluminum nitrogen is used as a novel nitride alloy material, has the characteristics of high breakdown field strength, high polarization strength and the like in theory, and forms a novel semiconductor heterojunction material device with the ultra-wide band gap semiconductor material diamond, so that the application field and development prospect of the semiconductor heterojunction device are widened.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic flow chart of a preparation method of a two-dimensional electron gas heterojunction structure based on nitride material and nitrogen-terminated diamond according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a two-dimensional electron gas heterojunction structure based on nitride material and nitrogen-terminated diamond according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1 and 2, a method for preparing a two-dimensional electron gas heterojunction structure based on nitride material and nitrogen-terminated diamond comprises the following steps:
102, carrying out nitrogen termination treatment on the surface of the diamond layer 10 to form a nitrogen termination surface 11;
wherein, the nitrogen terminal is processed in the atmosphere of nitrogen element gas by MBE, RIE or ICP equipment. Specifically, single crystal diamond was fed into an MBE apparatus, the output of N-Plasma was 150W, the substrate temperature was 450 ℃, and the nitrogen flow was 1sccm, and the surface of the diamond layer 10 was nitrided under this condition for 60 minutes to form a nitrogen terminated surface 11.
specifically, MBE technology is adopted, the substrate temperature is 500 ℃, the output power of N-Plasma is 200W, the nitrogen flow is 3sccm, and the Al/N beam current ratio is 3:2 growing an aluminum film with the thickness of 1-30 nm on the surface of the hydrogen terminal at the growth rate of 0.05 mu m/h under the aluminum-rich condition to form the aluminum nitride/nitrogen terminal diamond heterojunction. Wherein, the aluminum nitride epitaxial layer 20 is of an Al-surface polar wurtzite structure and has a thickness of 1-30 nm.
When the diamond is a single crystal diamond material, the thickness is 100-1000 mu m, the crystal orientation is (111) or
When the crystal orientation of the diamond layer 10 is (111), the crystal orientation of the aluminum nitride epitaxial layer 20 is (0001); the crystal orientation of the diamond layer 10 is +.>
At this time, the crystal orientation of the aluminum nitride epitaxial layer 20 is +.>
When the diamond layer 10 is a polycrystalline diamond material, donor impurity doping is performed when single crystal aluminum nitride is epitaxially grown. Specifically, a phosphorus source or other suitable donor element is added during the growth of the single crystal aluminum nitride to effect donor-doped aluminum nitride epitaxial layer 20.
Specifically, the two-dimensional electron gas heterojunction structure based on the nitrogen terminal diamond is prepared through the steps 101-103, and the two-dimensional electron gas heterojunction structure comprises the following steps: a diamond layer 10, a nitrogen termination surface 11 on the diamond layer 10, and an aluminum nitride epitaxial layer 20 of Al-plane polar wurtzite structure on the nitrogen termination surface.
In this embodiment, by selecting a diamond layer with a suitable crystal orientation and performing nitrogen termination treatment on the surface of the diamond layer, the nucleation of aluminum nitride on the diamond surface is facilitated, and high-quality aluminum nitride with a specific crystal orientation is epitaxially grown on the diamond surface with a nitrogen termination through Molecular Beam Epitaxy (MBE) equipment, so that interface defects such as surface states and dangling bonds of a heterojunction interface can be reduced, and the quality of the heterojunction interface can be effectively improved.
In addition, the nitrogen termination treatment changes the electron affinity energy of the diamond surface, thereby realizing the band-step regulation of the diamond/aluminum nitride heterojunction interface. For a single crystal diamond layer, a 2DEG can be generated on the surface of the nitrogen-terminated diamond by utilizing the polarization effect between the diamond layer and the aluminum nitride layer of the Al-face polar wurtzite structure; for a polycrystalline diamond layer, a 2DEG may be formed on the nitrogen termination surface by transfer doping between the diamond layer and the donor doped aluminum nitride layer.
Example two
Step 201, obtaining a diamond layer; wherein the diamond layer is made of single crystal diamond material or polycrystalline diamond material;
202, carrying out nitrogen terminal treatment on the surface of the diamond layer to form a nitrogen terminal surface;
wherein, the nitrogen terminal is processed in the atmosphere of nitrogen element gas by MBE, RIE or ICP equipment. Specifically, single crystal diamond was fed into an MBE apparatus, the output power of N-Plasma was 150W, the substrate temperature was 450 ℃, the nitrogen flow was 1sccm, and the surface of the diamond layer was nitrided under this condition for 60 minutes to form a nitrogen terminated surface.
Step 203, epitaxially growing monocrystal boron aluminum nitrogen of an Al-surface polar wurtzite structure on the surface of a nitrogen terminal to form a boron aluminum nitrogen epitaxial layer so as to form a two-dimensional electron gas heterojunction structure based on the nitrogen terminal diamond, namely a boron aluminum nitrogen/nitrogen terminal diamond heterojunction;
specifically, a MOVPE process can be adopted, trimethylaluminum, trimethylboron and nitrogen are used as an aluminum source, a boron source and a nitrogen source in an environment of 1280 ℃ and 90mBar, the ratio of the boron source to the aluminum source is regulated and controlled in the growth process of the boron, aluminum and nitrogen, and the boron and aluminum components of the boron, aluminum and nitrogen epitaxial layer are generated, and the ratio of trimethylaluminum to trimethylboron is determined according to the boron, aluminum and nitrogen alloy of the required components. Wherein the boron aluminum nitrogen epitaxial layer is of an Al-surface polar wurtzite structure and has a thickness of 1-30 nm.
When the diamond is a single crystal diamond material, the thickness is 100-1000 mu m, the crystal orientation is (111) or
When the diamond layer is a polycrystalline diamond material, donor impurity doping is performed when boron aluminum nitrogen is epitaxially grown. Specifically, a silicon source, oxygen source or other suitable donor element is added during the growth of the single crystal boron aluminum nitrogen, thereby realizing an n-type doped boron aluminum nitrogen epitaxial layer.
Specifically, the two-dimensional electron gas heterojunction structure based on the nitrogen terminal diamond is prepared through the steps 201-203, and the two-dimensional electron gas heterojunction structure comprises the following steps: the diamond layer, the nitrogen terminal surface that is located on the diamond layer and the boron aluminum nitrogen epitaxial layer of Al face polarity wurtzite structure that is located on the nitrogen terminal surface.
According to the embodiment, the nitrogen terminal treatment is carried out on the diamond surface, so that the diamond surface state can be reduced, boron aluminum nitrogen nucleation on the diamond surface is facilitated, and the heterojunction interface quality is improved. The nitrogen terminal treatment changes the electron affinity energy of the diamond surface, can realize band-order modulation control, and forms band-order suitable for two-dimensional electron gas transportation.
According to the embodiment, the component ratio of boron aluminum nitrogen is adjusted, so that the lattice constant of boron aluminum nitrogen of the epitaxial layer is adjusted, and the lattice mismatch problem between boron aluminum nitrogen and diamond is effectively relieved; and meanwhile, the energy band structure of boron aluminum nitrogen is regulated and controlled, and the combination of the surface terminal treatment of diamond is more beneficial to realizing the band order suitable for 2DEG transportation. Meanwhile, for the single crystal diamond layer, 2DEG can be generated on the surface of the nitrogen-terminated diamond by utilizing the polarization effect between the diamond layer and the boron aluminum nitrogen layer of the Al-surface polar wurtzite structure; for a polycrystalline diamond layer, a 2DEG may be formed on the nitrogen termination surface by transfer doping between the diamond layer and the donor-doped boron aluminum nitrogen layer.
The heterostructure realized by the invention has several points different from the traditional heterostructure such as AlGaAs/GaAs, so the requirements on materials and process conditions are different:
first, heterojunction material requirements are different. For a conventional AlGaAs/GaAs heterostructure, which is a pure monocrystalline semiconductor heterojunction, alGaAs and GaAs materials are required to be monocrystalline semiconductors. For the diamond-based heterojunction realized by the invention, the diamond can be single crystal or polycrystalline.
Second, the material surface properties are required to be different. The traditional AlGaAs/GaAs heterostructures do not require a terminal structure on the surface of a GaAs material, but for a nitrogen-terminated diamond heterojunction capable of generating two-dimensional electron gas n-type conductivity, the surface termination is required to exist on the surface of the diamond so as to adjust the electron affinity of the diamond, and a heterojunction interface band step suitable for 2DEG transport is formed.
Third, the 2DEG formation mechanism is different. The conventional AlGaAs/GaAs heterostructure forms a 2DEG by doping the AlGaAs barrier layer such that after the fermi levels of the two materials are level, the AlGaAs barrier layer is doped with an energy level higher than the fermi level of the GaAs layer, resulting in ionization of the donor impurity, the occurrence of carriers and entry into the channel layer. For nitrogen-terminated diamond heterojunction, 2DEG is formed on the diamond surface by polarization effect or transfer doping of the epitaxial layer material.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (4)
1. The preparation method of the two-dimensional electron gas heterojunction structure based on the nitride material and the nitrogen terminal diamond is characterized by comprising the following steps of:
step one, obtaining a diamond layer;
wherein the diamond layer is a single crystal diamond material or a polycrystalline diamond material;
step two, carrying out nitrogen terminal treatment on the surface of the diamond layer to form a nitrogen terminal surface;
step three, epitaxially growing monocrystalline aluminum nitride or boron aluminum nitrogen of an Al-surface polar wurtzite structure on the surface of the nitrogen terminal to form an aluminum nitride epitaxial layer or boron aluminum nitrogen epitaxial layer so as to form a two-dimensional electron gas heterojunction structure based on the nitrogen terminal diamond; when boron aluminum nitrogen is epitaxially grown, the boron and aluminum components of the boron aluminum nitrogen epitaxial layer are generated by regulating and controlling the ratio of a boron source to an aluminum source in the growth process of the boron aluminum nitrogen;
when the diamond is a single crystal diamond material, the crystal orientation is (111) or
When the crystal orientation of the diamond layer is (111), the crystal orientation of the aluminum nitride epitaxial layer is (0001); the crystal orientation of the diamond layer is +.>
The crystal orientation of the aluminum nitride epitaxial layer is +.>
When the diamond layer is a polycrystalline diamond material, donor impurity doping is performed when epitaxially growing aluminum nitride or boron aluminum nitrogen.
2. The method for fabricating a two-dimensional electron gas heterojunction structure based on nitride material and nitrogen-terminated diamond as claimed in claim 1, wherein the nitrogen-terminated treatment in the second step adopts MBE process, RIE process or ICP process.
3. The method for preparing a two-dimensional electron gas heterojunction structure based on nitride material and nitrogen-terminated diamond as claimed in claim 1, wherein the thickness of the aluminum nitride epitaxial layer or the boron aluminum nitrogen epitaxial layer is 1-30 nm.
4. A two-dimensional electron gas heterojunction structure based on nitride material and nitrogen-terminated diamond, prepared by the preparation method of any one of claims 1-3, comprising: the diamond layer, the nitrogen terminal surface positioned on the diamond layer, and the aluminum nitride epitaxial layer or the boron aluminum nitrogen epitaxial layer of the Al surface polar wurtzite structure positioned on the nitrogen terminal surface;
wherein the diamond layer is a single crystal diamond material or a polycrystalline diamond material;
when the diamond is a single crystal diamond material, the crystal orientation is (111) or
When the crystal orientation of the diamond layer is (111), the crystal orientation of the aluminum nitride epitaxial layer is (0001); the crystal orientation of the diamond layer is +.>
The crystal orientation of the aluminum nitride epitaxial layer is +.>
When the diamond layer is a polycrystalline diamond material, the aluminum nitride epitaxial layer or the boron aluminum nitride epitaxial layer is an epitaxial layer with donor doping.
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| CN116884976B (en) * | 2023-07-20 | 2024-05-10 | 深圳市汇芯通信技术有限公司 | Semiconductor device, preparation method thereof and semiconductor wafer |
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