CN112713122A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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CN112713122A
CN112713122A CN202011117533.XA CN202011117533A CN112713122A CN 112713122 A CN112713122 A CN 112713122A CN 202011117533 A CN202011117533 A CN 202011117533A CN 112713122 A CN112713122 A CN 112713122A
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package
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高尾腾真
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于，提供确保填充材料的注入性且改善散热性的半导体装置。半导体装置包含半导体模块、基板以及填充材料。半导体模块包含：半导体芯片；控制IC(Integrated Circuit)，其对半导体芯片的驱动进行控制；以及封装件，其通过绝缘材料而将半导体芯片以及控制IC封装。在基板安装半导体模块。填充材料设置于半导体模块的封装件的下表面与基板之间。基板包含贯通孔，该贯通孔设置于封装件的下方、且与封装件内的半导体芯片相比设置于控制IC的附近。

Description

半导体装置及半导体装置的制造方法
技术领域
本发明涉及半导体装置及半导体装置的制造方法。
背景技术
表面安装用功率半导体模块通常以不安装散热器的方式使用。在这种情况下，由封装件内部的半导体芯片产生的热通过构成封装件的树脂而从其表面向空气中散热，或者，经由从封装件的内部连通至外部的端子而向基板散热。从封装件的表面向空气中散热的路径的散热效率依赖于功率半导体模块的封装件的大小，因此其改善是困难的。因此，通过将基板的电路图案的面积放大，从而进行从封装件的内部通过端子而向基板散热的路径的散热效率的改善。但是，由于基板的小型化的要求的升高，电路图案的面积扩大变得困难，存在由于散热特性的限制而使半导体模块的性能提高受到制约的担忧。
在专利文献1中，公开了为了改善半导体元件的散热性，从在金属基板设置的注入口向半导体元件与金属基板之间注入散热用填充材料的技术。
专利文献1：日本特开2017-99035号公报
在填充材料被设置于半导体模块的封装件与安装该半导体模块的电路基板之间的情况下，封装件与基板隔着填充材料而密接。因此，由封装件内的半导体芯片产生的热从封装件的下部向基板传递。但是，在为了注入该填充材料而在基板设置的注入孔配置于发热量大的半导体芯片的下方的情况下，由半导体芯片产生的热从封装件的下部向注入孔传递。即，注入孔妨碍从半导体芯片向基板的散热效果。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于，提供确保填充材料的注入性且改善散热性的半导体装置。
本发明涉及的半导体装置包含半导体模块、基板以及填充材料。半导体模块包含：半导体芯片；控制IC(Integrated Circuit)，其对半导体芯片的驱动进行控制；以及封装件，其通过绝缘材料而将半导体芯片以及控制IC封装。在基板安装半导体模块。填充材料设置于半导体模块的封装件的下表面与基板之间。基板包含贯通孔，该贯通孔设置于封装件的下方、且与封装件内的半导体芯片相比设置于控制IC的附近。
发明的效果
根据本发明，能够提供确保填充材料的注入性且改善散热性的半导体装置。
本发明的目的、特征、方案以及优点通过以下的详细说明和附图变得更清楚。
附图说明
图1是表示实施方式1的半导体装置的结构的俯视图。
图2是表示实施方式1的半导体装置的结构的剖面图。
图3是表示实施方式1的半导体装置的制造方法的流程图。
图4是表示实施方式2的半导体装置的结构的俯视图。
图5是表示实施方式3的半导体装置的结构的一个例子的剖面图。
图6是表示实施方式3的半导体装置的结构的另一个例子的剖面图。
图7是表示实施方式4的半导体装置的结构的俯视图。
图8是表示实施方式5的半导体装置的结构的剖面图。
图9是表示实施方式6的半导体装置的结构的俯视图。
标号的说明
1半导体模块，2半导体芯片，3控制IC，4导线，5接合材料，6接合材料，7封装件，8A引线部，8B引线部，9接合材料，10电路图案，11基板，12贯通孔，13下方区域，14填充材料，15狭缝，16凸部，17凹部，18贯通孔，19金属图案，20微小孔。
具体实施方式
＜实施方式1＞
图1是表示实施方式1的半导体装置的结构的俯视图。图2是表示实施方式1的半导体装置的结构的剖面图，示出图1所示的A-A’剖面。
半导体装置包含半导体模块1、基板11以及填充材料14。半导体模块1包含半导体芯片2、控制IC(Integrated Circuit)3、封装件7以及引线部8A、8B。
半导体芯片2包含半导体元件，例如，由Si等半导体，或者，SiC、GaN等所谓的宽带隙半导体形成。半导体芯片2例如包含IGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal Oxide Semiconductor Field Effect Transistor)、肖特基势垒二极管等。半导体芯片2例如是电力用半导体芯片(功率半导体芯片)。
控制IC 3是用于对半导体芯片2的驱动进行控制的IC。控制IC 3通过导线4而与半导体芯片2连接。控制IC 3的驱动时的发热量比半导体芯片2的驱动时的发热量小。
引线部8A一端在封装件7的内部通过接合材料5而与半导体芯片2连接，另一端露出至封装件7的外部。同样地，引线部8B一端通过接合材料6而与控制IC 3连接，另一端露出至封装件7的外部。实施方式1的引线部8A、8B的另一端具有凸出至封装件7外部的结构。引线部8A、8B的另一端具有作为连接端子的功能。
封装件7将半导体芯片2、控制IC 3以及引线部8A、8B的一端包含于内部，将它们通过模塑树脂而封装。
基板11包含电路图案10以及贯通孔12。电路图案10经由接合材料9而与引线部8A、8B的另一端接合。由此，半导体模块1被安装于基板11之上。贯通孔12设置于封装件7的下方、且与封装件7内的半导体芯片2相比设置于控制IC 3的附近。例如，在如图1所示的俯视观察时，从贯通孔12的边缘至控制IC 3为止的距离比从该贯通孔12的边缘至半导体芯片2为止的距离短。或者例如，从贯通孔12的中心至控制IC 3为止的距离比从该贯通孔12的中心至半导体芯片2为止的距离短。贯通孔12例如像图1所示的那样，设置于控制IC 3的下方区域13内。
填充材料14设置于半导体模块1的封装件7的下表面与基板11之间。填充材料14例如是导热脂。
接下来，对实施方式1的半导体装置的制造方法进行说明。图3是表示实施方式1的半导体装置的制造方法的流程图。
在步骤S1中，准备包含半导体芯片2、控制IC 3以及封装件7的半导体模块1和包含贯通孔12的基板11。
在步骤S2中，以贯通孔12位于封装件7的下方、且与封装件7内的半导体芯片2相比位于控制IC 3的附近的方式，将半导体模块1安装于基板11。
在步骤S3中，从贯通孔12向半导体模块1的封装件7的下表面与基板11之间注入填充材料14。即，贯通孔12是填充材料14的注入孔。通过以上制造方法，从而制造图1及图2所示的半导体装置。
综上所述，实施方式1的半导体装置包含半导体模块1、基板11以及填充材料14。半导体模块1包含：半导体芯片2；控制IC 3，其对半导体芯片2的驱动进行控制；以及封装件7，其通过绝缘材料而将半导体芯片2以及控制IC 3封装。在基板11安装半导体模块1。填充材料14设置于半导体模块1的封装件7的下表面与基板11之间。基板11包含贯通孔12，该贯通孔12设置于封装件7的下方、且与封装件7内的半导体芯片2相比设置于控制IC 3的附近。
封装件7与基板11隔着填充材料14而密接，因此由半导体芯片2产生的热从封装件7的下部向基板11传递。在贯通孔12配置于发热量多的半导体芯片2的附近的情况下，由半导体芯片2产生的热向贯通孔12传递。即，贯通孔12妨碍从半导体芯片2向基板11的散热效果。但是，实施方式1的贯通孔12设置于与半导体芯片2相比发热量小的控制IC 3的附近。因此，由半导体芯片2产生的热与贯通孔12相比更高效地向基板11传递。这样的散热路径提高半导体装置的散热性。特别地，在半导体芯片2是对大电力进行控制的电力用半导体芯片(功率半导体芯片)的情况下，其发热量大。因此，实施方式1的半导体装置在半导体芯片2是功率半导体芯片的情况下，取得更佳效果。另外，贯通孔12位于半导体芯片2的封装件7的下方，因此能够将填充材料14准确地、高效地注入。
另外，在实施方式1中，将表面安装型功率半导体装置作为一个例子而示出，但半导体装置不限定于该结构，也可以是引线插入型功率半导体装置。
＜实施方式2＞
对实施方式2的半导体装置以及半导体装置的制造方法进行说明。实施方式2是实施方式1的下位概念。此外，对于与实施方式1相同的结构以及动作，省略说明。
图4是表示实施方式2的半导体装置的结构的俯视图。实施方式2的半导体装置除了基板11的结构以外，与实施方式1相同。
基板11除了贯通孔12以外，还包含狭缝15。该狭缝15与引线部8A、8B从封装件7的外表面露出的部分即根部，也就是基端部相比设置于封装件7的内侧、且位于封装件7的下方。另外，狭缝15贯通基板11。在实施方式2中，设置有2个狭缝15，但狭缝15的个数不限定于此。狭缝15的宽度例如是1mm。
在实施方式2的半导体装置的制造方法中，准备半导体模块1及基板11的工序以及将半导体模块1安装于基板11的工序与图3所示的步骤S1及S2相同。
在步骤S3中，在过剩的填充材料14被从贯通孔12注入至封装件7与基板11之间的情况下，该过剩的填充材料14从狭缝15落下至基板11的下方。
这样，狭缝15防止填充材料14附着于引线部8A、8B的另一端。特别地，在填充材料14具有导电性的情况下，狭缝15防止引线间短路。
＜实施方式3＞
对实施方式3的半导体装置以及半导体装置的制造方法进行说明。实施方式3是实施方式1的下位概念。此外，对于与实施方式1或者2相同的结构以及动作，省略说明。
图5是表示实施方式3的半导体装置的结构的一个例子的剖面图。图6是表示实施方式3的半导体装置的结构的另一个例子的剖面图。实施方式3的半导体装置除了半导体模块1的封装件7的结构以外，与实施方式1相同。
封装件7如图5所示的那样，在下部包含凸部16。或者，封装件7如图6所示的那样包含凹部17。
在实施方式3的半导体装置的制造方法中，准备半导体模块1及基板11的工序以及将半导体模块1安装于基板11的工序与图3所示的步骤S1及S2相同。
在步骤S3中，在过剩的填充材料14被从贯通孔12注入至封装件7与基板11之间的情况下，封装件7的凸部16或者凹部17阻挡该过剩的填充材料14。
这样，封装件7的凸部16或者凹部17防止填充材料14附着于引线部8A、8B的另一端。特别地，在填充材料14具有导电性的情况下，凸部16或者凹部17防止引线部8A、8B短路。
＜实施方式4＞
对实施方式4的半导体装置以及半导体装置的制造方法进行说明。实施方式4是实施方式1的下位概念。此外，对于与实施方式1至3中的任意者相同的结构以及动作，省略说明。
图7是表示实施方式4的半导体装置的结构的俯视图。实施方式4的半导体装置除了基板11的结构以外，与实施方式1相同。该基板11包含贯通孔18，该贯通孔18具有凸型的平面形状。
在实施方式4的半导体装置的制造方法中，准备半导体模块1及基板11的工序以及将半导体模块1安装于基板11的工序与图3所示的步骤S1及S2相同。
从凸型的贯通孔18注入的填充材料14平顺地扩展至封装件7的下部的整个范围。凸型的贯通孔18提高填充材料14的注入性。
＜实施方式5＞
对实施方式5的半导体装置以及半导体装置的制造方法进行说明。实施方式5是实施方式1的下位概念。此外，对于与实施方式1至4中的任意者相同的结构以及动作，省略说明。
图8是表示实施方式5的半导体装置的结构的剖面图。实施方式5的半导体装置除了基板11的结构以外，与实施方式1相同。
基板11包含金属图案19，该金属图案19覆盖贯通孔12的侧面、且从贯通孔12的边缘延伸至基板11的表面以及背面。即，金属图案19以及贯通孔12形成了所谓的通路孔或者通孔。优选在基板11的表面延伸的金属图案19的大小是与封装件7相同的大小。
这样的金属图案19使从半导体芯片2经由封装件7以及填充材料14而传递的热扩散至基板11的背面，提高散热效果。
＜实施方式6＞
对实施方式6的半导体装置以及半导体装置的制造方法进行说明。实施方式6是实施方式1的下位概念。此外，对于与实施方式1至5中的任意者相同的结构以及动作，省略说明。
图9是表示实施方式6的半导体装置的结构的俯视图。实施方式6的半导体装置除了基板11的结构以外，与实施方式1相同。此外，在图9中，省略了半导体芯片2以及控制IC 3的图示，但其配置与实施方式1相同。
基板11在封装件7的下方还包含至少1个比贯通孔12小、且侧面被金属图案19覆盖的微小孔20。在这种情况下，贯通孔12并非必须其侧面被金属图案19覆盖。为了确保封装件7的下表面与基板11之间的密接面积，微小孔20越小越好。微小孔20例如为直径0.4mm。
微小孔20将从半导体芯片2经由封装件7以及填充材料14而传递的热扩散至基板11的背面，提高散热效果。
此外，本发明能够在该发明的范围内对各实施方式自由地进行组合，或者对各实施方式适当地进行变形、省略。
对于本发明进行了详细说明，但上述说明在所有方面均为例示，本发明不限定于此。可以理解为在不脱离该发明的范围的情况下能够想到未例示出的无数的变形例。

Claims (7)

1.一种半导体装置，其具有：
半导体模块，其包含半导体芯片、控制IC和封装件，该控制IC对所述半导体芯片的驱动进行控制，该封装件通过绝缘材料而将所述半导体芯片以及所述控制IC封装，其中，IC为集成电路；
基板，其安装所述半导体模块；以及
填充材料，其设置于所述半导体模块的所述封装件的下表面与所述基板之间，
所述基板包含贯通孔，该贯通孔设置于所述封装件的下方、且与所述封装件内的所述半导体芯片相比设置于所述控制IC的附近。
2.根据权利要求1所述的半导体装置，其中，
所述半导体模块还包含引线部，该引线部一端在所述封装件的内部与所述半导体芯片或者所述控制IC连接、且另一端从所述封装件的内部露出至外部，
所述基板还包含狭缝，该狭缝与所述引线部从所述封装件的外表面露出的部分即基端部相比位于所述封装件的内侧、且位于所述封装件的下方。
3.根据权利要求1或2所述的半导体装置，其中，
所述封装件在所述封装件的下部包含凸部或者凹部。
4.根据权利要求1至3中任一项所述的半导体装置，其中，
所述贯通孔具有凸型的平面形状。
5.根据权利要求1至4中任一项所述的半导体装置，其中，
所述基板还包含金属图案，该金属图案覆盖所述贯通孔的侧面、且从所述贯通孔的边缘延伸至所述基板的表面以及背面。
6.根据权利要求5所述的半导体装置，其中，
所述基板在所述封装件的下方，还包含比所述贯通孔小、且侧面被所述金属图案覆盖的微小孔。
7.一种半导体装置的制造方法，其具有以下工序：
准备包含半导体芯片、控制IC以及封装件的半导体模块和包含贯通孔的基板，该控制IC对所述半导体芯片的驱动进行控制，该封装件通过绝缘材料而将所述半导体芯片以及所述控制IC封装，其中，IC为集成电路；
以所述贯通孔位于所述封装件的下方、且与所述封装件内的所述半导体芯片相比位于所述控制IC的附近的方式，将所述半导体模块安装于所述基板；以及
从所述贯通孔向所述半导体模块的所述封装件的下表面与所述基板之间注入填充材料。
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