CN112701117A - Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device - Google Patents
Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
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- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses an initiating explosive device energy conversion element integrated with a radio frequency and electrostatic protection device, which at least comprises a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit. The invention adopts an epitaxial wafer structure, breaks through the breakdown epitaxial layer by a break-through breakdown mechanism, and implements bypass protection by a heavily doped substrate short circuit. Due to the adoption of different punch-through protection mechanisms, the required thickness and resistivity of the epitaxial wafer can be customized to a professional epitaxial wafer supplier according to requirements to achieve the required protection voltage, and the control requirement of the subsequent integrated initiating explosive device manufacturing on the process parameters is simplified.
Description
Technical Field
The invention relates to the technical field of initiating explosive device energy conversion elements, in particular to an initiating explosive device energy conversion element integrated with a radio frequency and electrostatic protection device.
Background
The initiating explosive device is the first component of the fire-transmitting and explosion-transmitting sequence in the weapon system, has the characteristics of functional first-sending property, action sensitivity, wide application and one-time action, and determines the final efficiency of the weapon system. Therefore, the safety reliability is an important index for measuring and evaluating the performance of the initiating explosive device.
In order to solve the safety and reliability problems of the initiating explosive devices in the electromagnetic environment, a series of standards are established in the United states from the 20 th century to the 60 th century, and Mil-STD-461C defines the connotation of the electromagnetic environment as electromagnetic radiation (EMR), electromagnetic interference (EMI), electromagnetic pulse (EMP), static Electricity (ESD), detonator (LE) and Power Supply Transient (PST), and stipulates that the fuse, the ordnance system and the initiating explosive device for the spacecraft are required to be safe in the six electromagnetic environments.
With the increasingly complex and worsened electromagnetic environment of explosive devices and systems such as modern weapons and ammunition, electromagnetic energy received and picked up by electric initiating explosive devices in the weapons and ammunition through lead wires, coupling action and the like causes the risk of accidental detonation or performance reduction to increase gradually, and potential safety and reliability hazards are brought. Under the condition of small radio frequency (RF: 300kHz-30GHz) and static Electricity (ESD) energy, the ignition of the initiating explosive device is not enough to be caused, but the performance of the initiating explosive device is deteriorated due to the heat accumulation effect, for example, the explosive agent is decomposed to cause performance change, thereby losing the reliability of normal operation, and causing misfire, ignition delay, passiveness and the like. When the electromagnetic interference energy is accumulated to a certain degree, the accidental ignition and detonation of the initiating explosive device can be caused, and the safety of weapons and personnel is threatened. Particularly for low ignition energy (-1.0 mJ) semiconductor bridge SCB initiating explosive devices, it is necessary to provide ESD and RF protection.
The applicant of the applicant is dedicated to research in the field of protection of the initiating explosive device transducer element, and aims to solve the technical problems that in the prior art, the size is large and the anti-interference capability is poor when a protection circuit or system is built based on the initiating explosive device transducer element to carry out ESD and RF protection, the applicant provides a monolithic integrated passive sensing initiating explosive device transducer element chip (application number: 2019104017080), and the initiating explosive device transducer element and a bidirectional Radio Frequency (RF) and Electrostatic (ESD) protection device thereof are integrated on the same silicon chip substrate through a standard semiconductor process to realize monolithic integration. The standard semiconductor process can realize large-scale manufacturability, thereby ensuring the quality consistency and being a way for realizing high-safety and low-cost initiating explosive devices. In the technical scheme, the protective device adopts a semiconductor discharge tube with a thyristor structure, and the structure of the semiconductor discharge tube is a five-layer double-end symmetrical bidirectional thyristor. However, the scheme has the defects of complex process manufacturing, difficult control of process parameters and the like.
Therefore, it is necessary to provide a technical solution to solve the technical problems of the prior art.
Disclosure of Invention
In view of the above, it is necessary to provide an initiating explosive device transducer integrated with rf and electrostatic protection devices, which employs an epitaxial wafer structure, and uses a punch-through breakdown mechanism to punch through an epitaxial layer, and uses a heavily doped substrate short circuit to implement bypass protection. Due to the adoption of different punch-through protection mechanisms, the required thickness and resistivity of the epitaxial wafer can be customized to a professional epitaxial wafer supplier according to requirements to achieve the required protection voltage, and the control requirement of the subsequent integrated initiating explosive device manufacturing on the process parameters is simplified.
In order to solve the technical problems in the prior art, the technical scheme of the invention is as follows:
the initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device at least comprises a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit.
As a further improvement scheme, the substrate layer is an N-type heavily doped substrate, the epitaxial layer is an N-epitaxial layer, and the injection region is a P region of the formed PN junction.
As a further improvement, the implantation area is prepared and formed by adopting an ion implantation or diffusion mode.
As a further improvement, the transducer element adopts a conventional CVD semiconductor process to form a heavily doped N-type polycrystalline silicon layer or adopts a PVD semiconductor process to form a metal film bridge.
As a further improvement, the energy conversion element is heavily doped N-type polycrystalline silicon to form a semiconductor bridge.
As a further improvement, the transducer element is a metal film bridge formed by elementary metal or composite metal, wherein the elementary metal is any one of Ti/Al/Ni/Cr/Pt/Au; the composite metal is NiCr/PtW/NiAl.
As a further improvement, the electrode layer is a metal electrode aluminum layer.
As a further improvement scheme, the metal electrode aluminum layer adopts a die bonding routing process or a TiNiAu/TiNiAg sintering process.
As a further improvement, the insulating layer is a silicon dioxide layer.
As a further improvement, the silicon dioxide layer is prepared by thermal oxidation.
Compared with the prior art, the invention adopts an epitaxial wafer structure, breaks through the epitaxial layer by a punch-through breakdown mechanism, and implements bypass protection by a heavily doped substrate short circuit, which is different from the protection principle of a semiconductor discharge tube and is also different from the TVS protection principle (avalanche breakdown mechanism). Due to the adoption of different punch-through protection mechanisms, the required thickness and resistivity of the epitaxial wafer can be customized to a professional epitaxial wafer supplier according to requirements to achieve the required protection voltage, and the control requirement of the subsequent integrated initiating explosive device manufacturing on the process parameters is simplified.
By adopting the technical scheme of the invention, the breakdown voltage of the protective device is determined by the resistivity and the thickness (d) of the epitaxial layer, so that initiating explosive device transducer series products with various specifications can be conveniently designed.
The technical scheme of the invention has completed chip flow, wherein, a sample 34V voltage specification of 1.0mm x 1.0mm is subjected to preliminary experiments according to the national military standard GJB736 radio frequency sensitivity measurement of electric initiating explosive devices by initiating explosive device test method and GJB5309 static discharge test by initiating explosive device test method. The RF experiment is carried out in an injection mode, and the injection power is more than or equal to 9W; the preliminary test conclusion of ESD protection is more than or equal to 45 kV.
Drawings
Fig. 1 is a schematic structural diagram of an initiating explosive device transducer element of an integrated radio frequency and electrostatic protection device according to the present invention.
Fig. 2 is a schematic structural diagram of a preferred embodiment of the present invention.
Fig. 3 is a dc equivalent circuit diagram of the transducer of the initiating explosive device according to the present invention.
Fig. 4 is an ac equivalent circuit diagram of the transducer of the initiating explosive device.
Fig. 5 is a flow chart of a method for manufacturing an initiating explosive device transducer element integrated with a radio frequency and electrostatic protection device according to the present invention.
Fig. 6 is a process flow diagram of an initiating explosive device transducer element integrated with a radio frequency and electrostatic protection device according to the present invention.
FIG. 7 is a verification diagram of the design of a Mask according to the present invention, in which three bridge resistors are designed.
Fig. 8 is a partial enlarged view of an actual flow sheet result.
The following specific embodiments will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
The technical solution provided by the present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1, the schematic structural diagram of the initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device provided by the invention is shown, and the initiating explosive device transducer element at least comprises a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit.
In the technical scheme, the surface-fire-work-piece energy conversion element is realized by two technical schemes, namely, the energy conversion element is a semiconductor bridge formed by heavily-doped N-type polycrystalline silicon or a metal film bridge formed by simple substance metal or composite metal, and in addition, other energy-containing structures can be formed above the energy conversion element.
Further, the heavily doped N-type polysilicon forms a semiconductor bridge (SCB): polysilicon, heavily doped N-type (preferably phosphorus impurity), has a typical resistivity of 7.0x10-4 Ω. cm, a typical value for SCB bridge resistance is around 1.0 ohm, and has a negative temperature coefficient of resistance.
Further, the elementary metal is any one of Ti/Al/Ni/Cr/Pt/Au; the composite metal is NiCr/PtW/NiAl, so as to form a metal film bridge. Taking an NiCr alloy as an example, the typical resistivity is 1.1x10-4 Ω. cm, the resistance value is in the range of 1.0-10.0 ohm, and the general metal film has a positive temperature coefficient of resistance.
Referring to fig. 2, a schematic structural diagram of a preferred embodiment of the present invention is shown, wherein the substrate layer is an N-type heavily doped substrate, generally heavily doped (As), resistivity: 0.0020-0.0055 ohm cm (Ω. cm), or typically heavily doped with phosphorus (P), resistivity: 0.0007-0.0015 ohm centimeter (omega. cm).
The epitaxial layer is an N-epitaxial (N-epitoxy) layer, typically doped with (As), and the breakdown voltage determines the choice of epitaxial layer resistivity and thickness (d). For example, the resistivity of 20V-50V is generally selected to be 0.027-0.5 ohm centimeter (omega. cm), and the epitaxial thickness d is generally selected to be 2.0-4.0 um.
The injection region is a P region of the formed PN junction. The preparation method adopts ion implantation or diffusion. Typical ion implantation conditions: 1.0E14/50keV, and annealing to form P region of PN junction.
The transducer element of the embodiment shown in fig. 2 uses a metal bridge film transducer element formed of Ti, which is a metal. It can further form a single layer (such as Zr) or a composite energetic material (not shown) formed by multiple layers of materials such as B/Ti, Al/CuO, etc. thereon by PVD means such as evaporation, sputtering, etc.
The electrode layer is a metal electrode aluminum layer, and can also be TiNiAu/TiNiAg. Depending on whether the chip package uses wire bonding or sintering processes.
The insulating layer is a silicon dioxide layer (SiO2 layer) prepared by thermal oxidation or CVD deposition, approximately 1000 angstroms. And plays an electric insulation role.
Referring to fig. 3 and 4, there are shown schematic diagrams of equivalent circuits of DC and AC of the transducer of the initiating explosive device according to the present invention, wherein the firing voltage < the protection voltage VBR; the diodes D1, D2 represent protection devices (breakdown voltage VBR can be serialized, e.g. 5.0-50V, depending on the application scenario) in parallel with the pyrotechnic transducer elements R. The transducer element R is protected by stray interference signals such as Radio Frequency (RF), static Electricity (ESD) and the like.
The working principle is as follows:
referring to the Direct Current (DC) equivalent circuit of fig. 3, a parallel branch exists between two legs of the energy conversion element AB. The branch circuit is formed by connecting two back-to-back PN junctions and a parasitic resistor in series Rj (an epitaxial layer resistor and a heavily doped substrate resistor) which are manufactured on an epitaxial wafer substrate. When one diode is forward biased, the other diode must be reverse biased, thus opening the dc path.
In practical applications, when the transducer is started, the firing capacitor is generally charged (for example, 22uF/16V, not shown in the figure), and then the firing capacitor is ignited by discharging through the transducer resistor. Taking the ignition capacitance parameter as an example, the set protection voltage VBR of the initiating explosive device energy conversion element should be at least greater than 16V (reverse breakdown voltage of the diode D1) +0.7V (forward voltage drop of the diode D2) ═ 16.7V, and after a certain safety coefficient is added, 20V is taken, for example, to ensure that when the initiating explosive device is ignited, the parallel branch is in an open circuit state, and except for the leakage current of the diode, the energy is mainly concentrated on the initiating explosive device energy conversion element. Therefore, the ignition voltage is less than the protection voltage VBR, and the protection circuit does not function.
Generally, ESD is in kilovolt level, when the applied voltage is increased further and exceeds VBR, the PN space barrier region of the diode begins to expand until it penetrates Through the whole epitaxial layer thickness d, and Punch Through Breakdown (Punch Through Breakdown) occurs. After punch-through breakdown is sent, the resistance of the substrate is in the order of milliohms, negligible, due to the very low (0.0007-0.0055 ohm cm) resistivity of the heavily doped substrate, shorting the epitaxial layer resistance. The two ends of AB are changed into on state, which is equivalent to short circuit and can discharge amplified current; when the external voltage is removed, the tube can be recovered to a broken state, can be reused, has consistent bidirectional structure and electrical parameters, and can release bidirectional overvoltage. Namely, the invention adopts punch-through breakdown to realize bidirectional ESD protection.
Referring to the Alternating Current (AC) equivalent circuit of fig. 4, a parallel branch exists between two legs of the transducer element AB. For an alternating current signal, the capacitors Cj1 and Cj2 formed by the PN junction space charge region of the branch and the parasitic resistance Rj (neglected because the substrate doping concentration is high) of the epitaxial layer and the substrate are formed. The junction capacitances Cj1 and Cj2 can be varied by the chip area size of D1/D2. The ideal PN junction is a reactive device and does not dissipate power. Theoretically, the RF voltage applied to the PN junction does not cause it to heat up. This parallel branch will therefore bypass the RF signal. Thereby reducing the risk of the explosive agent thermally decomposing by the RF signal, causing its performance to degrade, or causing an accidental explosion.
Referring to fig. 5 and 6, a flow chart diagram and a process flow chart of a method for manufacturing an initiating explosive device transducer element integrated with a radio frequency and electrostatic protection device according to the present invention are shown, which at least comprises the following steps:
step S1: forming an N-epitaxial layer on the N-type heavily doped substrate by adopting an epitaxial process;
step S2: and forming an insulating layer by thermal oxidation on the N-epitaxial layer, and forming an injection region opening by photoetching. The implantation region forms a P region through ion implantation or diffusion;
step S3: two injection regions are prepared on the N-epitaxial layer in an ion injection or diffusion mode, a P region of a PN junction is formed through annealing, and the PN junction is formed with the N-epitaxial layer.
Step S4: a parallel branch which forms an energy conversion element on the insulating layer and is electrically connected with the P region to enable the two PN junctions to be connected back to back;
step S5: an electrode layer is formed on the transducer element to be connected to an external circuit.
Wherein, the transducer element adopts the conventional CVD semiconductor process to form a heavily doped N-type polycrystalline silicon layer. The N-type impurity is preferably phosphorus atom with doping concentration>1019Atom/cm 3. The polysilicon layer has good conductivity and has a negative temperature coefficient of resistance. The method is used for manufacturing the transducer element and the interconnection line between the transducer element and the protective device.
Or, the transducer element adopts conventional PVD semiconductor process such as electron beam evaporation, magnetron sputtering and the like to form a metal film connecting layer of elementary metal (Al/Ni/Cr/Pt/Au and the like) or composite metal (NiCr/PtW/NiAl and the like). The metal film connecting layer has good conductivity. The method is used for manufacturing the transducer element and the interconnection line between the transducer element and the protective device.
Referring to fig. 7, a design verification diagram of a reticle (Mask) according to the present invention, in which three bridge resistors are designed, is shown, and fig. 8 is a partial enlarged view of an actual flow sheet result.
The technical scheme of the invention has completed chip flow, and the test result of 3 chip sizes is shown in the following table 1:
TABLE 1 test results
A sample 34V voltage specification of 1.0mm x 1.0mm is subjected to preliminary experiments according to the national military standard GJB736 electric initiating explosive device radio frequency sensitivity measurement and GJB5309 Electrostatic discharge test for initiating explosive device test methods. The RF experiment is carried out in an injection mode, and the injection power is more than or equal to 9W; the preliminary test conclusion of ESD protection is more than or equal to 45 kV.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device is characterized by at least comprising a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit.
2. The initiating explosive device transducer element of an integrated radio frequency and electrostatic protection device according to claim 1, wherein the substrate layer is an N-type heavily doped substrate, the epitaxial layer is an N-epitaxial layer, and the injection region is a P region of the formed PN junction.
3. The pyrotechnic element of an integrated radio frequency and electrostatic protection device as claimed in claim 1 or 2, wherein the implantation region is prepared by ion implantation or diffusion.
4. The pyrotechnic energy converter element of the integrated radio frequency and electrostatic protection device as claimed in claim 1 or 2, wherein the energy converter element adopts a conventional CVD semiconductor process to form a heavily doped N-type polycrystalline silicon layer or a PVD semiconductor process to form a metal film bridge.
5. The pyrotechnic energy conversion element integrated with a radio frequency electrostatic protection device according to claim 4, wherein the energy conversion element is heavily doped N-type polycrystalline silicon to form a semiconductor bridge.
6. The initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device as claimed in claim 4, wherein the transducer element is a metal film bridge formed by elementary metal or composite metal, wherein the elementary metal is any one of Ti/Al/Ni/Cr/Pt/Au; the composite metal is NiCr/PtW/NiAl.
7. The pyrotechnic element of an integrated radio frequency electrostatic protection device according to claim 1 or 2, wherein the electrode layer is a metal electrode aluminum layer.
8. The pyrotechnic energy conversion element of the integrated radio frequency and electrostatic protection device as claimed in claim 1 or 2, wherein the electrode layer is made of TiNiAu or TiNiAg.
9. The pyrotechnic energy conversion element of an integrated radio frequency electrostatic protection device according to claim 1 or 2, wherein the insulating layer is a silicon dioxide layer.
10. The pyrotechnic transducer element of an integrated radio frequency electrostatic discharge protection device according to claim 9, wherein the silicon dioxide layer is prepared by thermal oxidation or CVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011581503.4A CN112701117A (en) | 2020-12-28 | 2020-12-28 | Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011581503.4A CN112701117A (en) | 2020-12-28 | 2020-12-28 | Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
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