CN213878091U - Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device - Google Patents
Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device Download PDFInfo
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- CN213878091U CN213878091U CN202023217917.7U CN202023217917U CN213878091U CN 213878091 U CN213878091 U CN 213878091U CN 202023217917 U CN202023217917 U CN 202023217917U CN 213878091 U CN213878091 U CN 213878091U
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Abstract
The utility model discloses an initiating explosive device energy conversion element of an integrated radio frequency and electrostatic protection device, which at least comprises a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit. The utility model discloses take the epitaxial wafer structure, rely on the break-over to puncture mechanism break-over and puncture epitaxial layer, lean on the heavy doping substrate short circuit to implement the bypass protection. Due to the adoption of different punch-through protection mechanisms, the required thickness and resistivity of the epitaxial wafer can be customized to a professional epitaxial wafer supplier according to requirements to achieve the required protection voltage, and the control requirement of the subsequent integrated initiating explosive device manufacturing on the process parameters is simplified.
Description
Technical Field
The utility model relates to an initiating explosive device transduction component technical field especially relates to an initiating explosive device transduction unit of integrated radio frequency, electrostatic protection device.
Background
The initiating explosive device is the first component of the fire-transmitting and explosion-transmitting sequence in the weapon system, has the characteristics of functional first-sending property, action sensitivity, wide application and one-time action, and determines the final efficiency of the weapon system. Therefore, the safety reliability is an important index for measuring and evaluating the performance of the initiating explosive device.
In order to solve the safety and reliability problems of the initiating explosive devices in the electromagnetic environment, a series of standards are established in the United states from the 20 th century to the 60 th century, and Mil-STD-461C defines the connotation of the electromagnetic environment as electromagnetic radiation (EMR), electromagnetic interference (EMI), electromagnetic pulse (EMP), static Electricity (ESD), detonator (LE) and Power Supply Transient (PST), and stipulates that the fuse, the ordnance system and the initiating explosive device for the spacecraft are required to be safe in the six electromagnetic environments.
With the increasingly complex and worsened electromagnetic environment of explosive devices and systems such as modern weapons and ammunition, electromagnetic energy received and picked up by electric initiating explosive devices in the weapons and ammunition through lead wires, coupling action and the like causes the risk of accidental detonation or performance reduction to increase gradually, and potential safety and reliability hazards are brought. Under the condition of small radio frequency (RF: 300kHz-30GHz) and static Electricity (ESD) energy, the ignition of the initiating explosive device is not enough to be caused, but the performance of the initiating explosive device is deteriorated due to the heat accumulation effect, for example, the explosive agent is decomposed to cause performance change, thereby losing the reliability of normal operation, and causing misfire, ignition delay, passiveness and the like. When the electromagnetic interference energy is accumulated to a certain degree, the accidental ignition and detonation of the initiating explosive device can be caused, and the safety of weapons and personnel is threatened. Particularly for low ignition energy (-1.0 mJ) semiconductor bridge SCB initiating explosive devices, it is necessary to provide ESD and RF protection.
The applicant of the applicant is dedicated to research in the field of protection of the initiating explosive device transducer element, and aims to solve the technical problems that in the prior art, the size is large and the anti-interference capability is poor when a protection circuit or system is built based on the initiating explosive device transducer element to carry out ESD and RF protection, the applicant provides a monolithic integrated passive sensing initiating explosive device transducer element chip (application number: 2019104017080), and the initiating explosive device transducer element and a bidirectional Radio Frequency (RF) and Electrostatic (ESD) protection device thereof are integrated on the same silicon chip substrate through a standard semiconductor process to realize monolithic integration. The standard semiconductor process can realize large-scale manufacturability, thereby ensuring the quality consistency and being a way for realizing high-safety and low-cost initiating explosive devices. In the technical scheme, the protective device adopts a semiconductor discharge tube with a thyristor structure, and the structure of the semiconductor discharge tube is a five-layer double-end symmetrical bidirectional thyristor. However, the scheme has the defects of complex process manufacturing, difficult control of process parameters and the like.
Therefore, it is necessary to provide a technical solution to solve the technical problems of the prior art.
Disclosure of Invention
In view of the above, it is necessary to provide an initiating explosive device transducer integrated with rf and electrostatic protection devices, which employs an epitaxial wafer structure, and uses a punch-through breakdown mechanism to punch through an epitaxial layer, and uses a heavily doped substrate short circuit to implement bypass protection. Due to the adoption of different punch-through protection mechanisms, the required thickness and resistivity of the epitaxial wafer can be customized to a professional epitaxial wafer supplier according to requirements to achieve the required protection voltage, and the control requirement of the subsequent integrated initiating explosive device manufacturing on the process parameters is simplified.
In order to solve the technical problem existing in the prior art, the technical scheme of the utility model as follows:
the initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device at least comprises a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit.
As a further improvement scheme, the substrate layer is an N-type heavily doped substrate, the epitaxial layer is an N-epitaxial layer, and the injection region is a P region of the formed PN junction.
As a further improvement, the implantation area is prepared and formed by adopting an ion implantation or diffusion mode.
As a further improvement, the transducer element adopts a conventional CVD semiconductor process to form a heavily doped N-type polycrystalline silicon layer or adopts a PVD semiconductor process to form a metal film bridge.
As a further improvement, the energy conversion element is heavily doped N-type polycrystalline silicon to form a semiconductor bridge.
As a further improvement, the transducer element is a metal film bridge formed by elementary metal or composite metal, wherein the elementary metal is any one of Ti/Al/Ni/Cr/Pt/Au; the composite metal is NiCr/PtW/NiAl.
As a further improvement, the electrode layer is a metal electrode aluminum layer.
As a further improvement scheme, the metal electrode aluminum layer adopts a die bonding routing process or a TiNiAu/TiNiAg sintering process.
As a further improvement, the insulating layer is a silicon dioxide layer.
As a further improvement, the silicon dioxide layer is prepared by thermal oxidation.
Compared with the prior art, the utility model discloses take the epitaxial wafer structure, rely on the break-over breakdown mechanism break-over epitaxial layer, lean on the heavy doping substrate short circuit to implement the bypass protection, this is different with semiconductor discharge tube protection principle, also is different from TVS protection principle (avalanche breakdown mechanism). Due to the adoption of different punch-through protection mechanisms, the required thickness and resistivity of the epitaxial wafer can be customized to a professional epitaxial wafer supplier according to requirements to achieve the required protection voltage, and the control requirement of the subsequent integrated initiating explosive device manufacturing on the process parameters is simplified.
Adopt the technical scheme of the utility model, the breakdown voltage of protection device has been decided to epitaxial layer resistivity and thickness (d) to the initiating explosive device transducer series product of various specifications can be convenient design out.
The utility model discloses technical scheme has accomplished chip class piece, wherein, to a sample 34V voltage specification of 1.0mm x 1.0mm, carried out preliminary experiment according to national military standard GJB736 "initiating explosive device experimental method initiating explosive device radio frequency sensitivity survey" and GJB5309 "initiating explosive device test method electrostatic discharge test". The RF experiment is carried out in an injection mode, and the injection power is more than or equal to 9W; the preliminary test conclusion of ESD protection is more than or equal to 45 kV.
Drawings
Fig. 1 is a schematic structural diagram of the initiating explosive device energy conversion unit of the integrated radio frequency and electrostatic protection device of the present invention.
Fig. 2 is a schematic structural diagram of a preferred embodiment of the present invention.
Fig. 3 is a dc equivalent circuit diagram of the energy conversion element of the initiating explosive device of the present invention.
Fig. 4 is an ac equivalent circuit diagram of the energy conversion element of the initiating explosive device of the present invention.
Fig. 5 is a process flow diagram of the initiating explosive device energy conversion unit of the integrated radio frequency and electrostatic protection device of the present invention.
Fig. 6 is a design verification diagram of a photolithography Mask (Mask) according to the present invention, in which three bridge resistors are designed.
The following detailed description of the invention will be made in conjunction with the above-described drawings.
Detailed Description
The technical solution provided by the present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1, the structure of the initiating explosive device transducer element integrated with a radio frequency and electrostatic protection device according to the present invention at least includes a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit.
In the technical scheme, the surface-fire-work-piece energy conversion element is realized by two technical schemes, namely, the energy conversion element is a semiconductor bridge formed by heavily-doped N-type polycrystalline silicon or a metal film bridge formed by simple substance metal or composite metal, and in addition, other energy-containing structures can be formed above the energy conversion element.
Further, the heavily doped N-type polysilicon forms a semiconductor bridge (SCB): polysilicon, heavily doped N-type (preferably phosphorus impurity), has a typical resistivity of 7.0x10-4 Ω. cm, a typical value for SCB bridge resistance is around 1.0 ohm, and has a negative temperature coefficient of resistance.
Further, the elementary metal is any one of Ti/Al/Ni/Cr/Pt/Au; the composite metal is NiCr/PtW/NiAl, so as to form a metal film bridge. Taking an NiCr alloy as an example, the typical resistivity is 1.1x10-4 Ω. cm, the resistance value is in the range of 1.0-10.0 ohm, and the general metal film has a positive temperature coefficient of resistance.
Referring to fig. 2, there is shown a schematic structural diagram of a preferred embodiment of the present invention, wherein the substrate layer is an N-type heavily doped substrate, typically heavily doped (As), resistivity: 0.0020-0.0055 ohm cm (Ω. cm), or typically heavily doped with phosphorus (P), resistivity: 0.0007-0.0015 ohm centimeter (omega. cm).
The epitaxial layer is an N-epitaxial (N-epitoxy) layer, typically doped with (As), and the breakdown voltage determines the choice of epitaxial layer resistivity and thickness (d). For example, the resistivity of 20V-50V is generally selected to be 0.027-0.5 ohm centimeter (omega. cm), and the epitaxial thickness d is generally selected to be 2.0-4.0 um.
The injection region is a P region of the formed PN junction. The preparation method adopts ion implantation or diffusion. Typical ion implantation conditions: 1.0E14/50keV, and annealing to form P region of PN junction.
The transducer element of the embodiment shown in fig. 2 uses a metal bridge film transducer element formed of Ti, which is a metal. It can further form a single layer (such as Zr) or a composite energetic material (not shown) formed by multiple layers of materials such as B/Ti, Al/CuO, etc. thereon by PVD means such as evaporation, sputtering, etc.
The electrode layer is a metal electrode aluminum layer, and can also be TiNiAu/TiNiAg. Depending on whether the chip package uses wire bonding or sintering processes.
The insulating layer is a silicon dioxide layer (SiO2 layer) prepared by thermal oxidation or CVD deposition, approximately 1000 angstroms. And plays an electric insulation role.
Referring to fig. 3 and 4, there are shown schematic diagrams of equivalent circuits of DC and AC of the initiating explosive device energy-converting element of the present invention, wherein the ignition voltage < the protection voltage VBR; the diodes D1, D2 represent protection devices (breakdown voltage VBR can be serialized, e.g. 5.0-50V, depending on the application scenario) in parallel with the pyrotechnic transducer elements R. The transducer element R is protected by stray interference signals such as Radio Frequency (RF), static Electricity (ESD) and the like.
The working principle is as follows:
referring to the Direct Current (DC) equivalent circuit of fig. 3, a parallel branch exists between two legs of the energy conversion element AB. The branch circuit is formed by connecting two back-to-back PN junctions and a parasitic resistor in series Rj (an epitaxial layer resistor and a heavily doped substrate resistor) which are manufactured on an epitaxial wafer substrate. When one diode is forward biased, the other diode must be reverse biased, thus opening the dc path.
In practical applications, when the transducer is started, the firing capacitor is generally charged (for example, 22uF/16V, not shown in the figure), and then the firing capacitor is ignited by discharging through the transducer resistor. Taking the ignition capacitance parameter as an example, the set protection voltage VBR of the initiating explosive device energy conversion element should be at least greater than 16V (reverse breakdown voltage of the diode D1) +0.7V (forward voltage drop of the diode D2) ═ 16.7V, and after a certain safety coefficient is added, 20V is taken, for example, to ensure that when the initiating explosive device is ignited, the parallel branch is in an open circuit state, and except for the leakage current of the diode, the energy is mainly concentrated on the initiating explosive device energy conversion element. Therefore, the ignition voltage is less than the protection voltage VBR, and the protection circuit does not function.
Generally, ESD is in kilovolt level, when the applied voltage is increased further and exceeds VBR, the PN space barrier region of the diode begins to expand until it penetrates Through the whole epitaxial layer thickness d, and Punch Through Breakdown (Punch Through Breakdown) occurs. After punch-through breakdown is sent, the resistance of the substrate is in the order of milliohms, negligible, due to the very low (0.0007-0.0055 ohm cm) resistivity of the heavily doped substrate, shorting the epitaxial layer resistance. The two ends of AB are changed into on state, which is equivalent to short circuit and can discharge amplified current; when the external voltage is removed, the tube can be recovered to a broken state, can be reused, has consistent bidirectional structure and electrical parameters, and can release bidirectional overvoltage. Namely, the utility model discloses a two-way ESD protection is realized to the break-over breakdown.
Referring to the Alternating Current (AC) equivalent circuit of fig. 4, a parallel branch exists between two legs of the transducer element AB. For an alternating current signal, the capacitors Cj1 and Cj2 formed by the PN junction space charge region of the branch and the parasitic resistance Rj (neglected because the substrate doping concentration is high) of the epitaxial layer and the substrate are formed. The junction capacitances Cj1 and Cj2 can be varied by the chip area size of D1/D2. The ideal PN junction is a reactive device and does not dissipate power. Theoretically, the RF voltage applied to the PN junction does not cause it to heat up. This parallel branch will therefore bypass the RF signal. Thereby reducing the risk of the explosive agent thermally decomposing by the RF signal, causing its performance to degrade, or causing an accidental explosion.
Referring to fig. 5, a process flow diagram of an initiating explosive device transducer cell of an integrated radio frequency and electrostatic protection device according to the present invention is shown, wherein the transducer cell adopts a conventional CVD semiconductor process to form a heavily doped N-type polysilicon layer. The N-type impurity is preferably phosphorus atom with doping concentration>1019Atom/cm 3. The polysilicon layer has good conductivity and has a negative temperature coefficient of resistance. The method is used for manufacturing the transducer element and the interconnection line between the transducer element and the protective device.
Or, the transducer element adopts conventional PVD semiconductor process such as electron beam evaporation, magnetron sputtering and the like to form a metal film connecting layer of elementary metal (Al/Ni/Cr/Pt/Au and the like) or composite metal (NiCr/PtW/NiAl and the like). The metal film connecting layer has good conductivity. The method is used for manufacturing the transducer element and the interconnection line between the transducer element and the protective device.
Referring to fig. 6, a reticle (Mask) design verification diagram of the present invention is shown, in which three bridge resistors are designed.
The utility model discloses technical scheme has accomplished the chip and has flowed the piece, and 3 chip size's test result is as shown in following table 1:
TABLE 1 test results
A sample 34V voltage specification of 1.0mm x 1.0mm is subjected to preliminary experiments according to the national military standard GJB736 electric initiating explosive device radio frequency sensitivity measurement and GJB5309 Electrostatic discharge test for initiating explosive device test methods. The RF experiment is carried out in an injection mode, and the injection power is more than or equal to 9W; the preliminary test conclusion of ESD protection is more than or equal to 45 kV.
The above description of the embodiments is only intended to help understand the method of the present invention and its core ideas. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, the present invention can be further modified and modified, and such modifications and modifications also fall within the protection scope of the appended claims.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device is characterized by at least comprising a substrate layer and an epitaxial layer formed on the substrate layer, wherein two independent injection regions are formed in the epitaxial layer to form two PN junctions; the insulating layer is arranged on the epitaxial layer and a notch is formed on the injection region; the energy conversion element is arranged on the insulating layer and electrically connected with the injection region to enable the two PN junctions to form a parallel branch, and the energy conversion element forms an electrode layer to be connected with an external circuit.
2. The initiating explosive device transducer element of an integrated radio frequency and electrostatic protection device according to claim 1, wherein the substrate layer is an N-type heavily doped substrate, the epitaxial layer is an N-epitaxial layer, and the injection region is a P region of the formed PN junction.
3. The pyrotechnic element of an integrated radio frequency and electrostatic protection device as claimed in claim 1 or 2, wherein the implantation region is prepared by ion implantation or diffusion.
4. The pyrotechnic energy conversion element of the integrated radio frequency and electrostatic protection device as claimed in claim 1 or 2, wherein the energy conversion element adopts a CVD semiconductor process to form a heavily doped N-type polycrystalline silicon layer or a PVD semiconductor process to form a metal film bridge.
5. The pyrotechnic energy conversion element integrated with a radio frequency electrostatic protection device according to claim 4, wherein the energy conversion element is heavily doped N-type polycrystalline silicon to form a semiconductor bridge.
6. The initiating explosive device transducer element of the integrated radio frequency and electrostatic protection device as claimed in claim 4, wherein the transducer element is a metal film bridge formed by elementary metal or composite metal, wherein the elementary metal is any one of Ti/Al/Ni/Cr/Pt/Au; the composite metal is NiCr/PtW/NiAl.
7. The pyrotechnic element of an integrated radio frequency electrostatic protection device according to claim 1 or 2, wherein the electrode layer is a metal electrode aluminum layer.
8. The pyrotechnic energy conversion element of the integrated radio frequency and electrostatic protection device as claimed in claim 1 or 2, wherein the electrode layer is made of TiNiAu or TiNiAg.
9. The pyrotechnic energy conversion element of an integrated radio frequency electrostatic protection device according to claim 1 or 2, wherein the insulating layer is a silicon dioxide layer.
10. The pyrotechnic transducer element of an integrated radio frequency electrostatic discharge protection device according to claim 9, wherein the silicon dioxide layer is prepared by thermal oxidation or CVD.
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| CN112701117A (en) * | 2020-12-28 | 2021-04-23 | 浙江华泉微电子有限公司 | Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112701117A (en) * | 2020-12-28 | 2021-04-23 | 浙江华泉微电子有限公司 | Initiating explosive device energy conversion element integrated with radio frequency and electrostatic protection device |
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