CN112670352B - Passivation structure applied to contact passivation battery and preparation method thereof - Google Patents
Passivation structure applied to contact passivation battery and preparation method thereof Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 100
- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 238000000137 annealing Methods 0.000 claims abstract description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 36
- 239000013585 weight reducing agent Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000011065 in-situ storage Methods 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 26
- 230000031700 light absorption Effects 0.000 abstract description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 24
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910020286 SiOxNy Inorganic materials 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to the technical field of solar cells, and discloses a passivation structure applied to a contact passivation layer in a TOPCO cell in the prior art and a preparation method thereof, aiming at the problem of high light absorptivity of the contact passivation layer in the TOPCO cell, the passivation structure comprises an N-type substrate, two positive electrodes arranged on the front surface of the N-type substrate and two negative electrodes arranged on the back surface of the N-type substrate, wherein the back surface of the N-type substrate is provided with SiO 2 A layer of SiO 2 The doped polycrystalline SiO is arranged on the layer x N y A layer. According to the invention, the doped polycrystalline silicon oxynitride layer is used for replacing the polycrystalline silicon layer, so that the light absorption of the contact passivation layer is reduced and the efficiency of the contact passivation type battery is improved by doping and annealing under proper conditions on the basis of ensuring that the contact resistance is not changed greatly.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a passivation structure applied to a contact passivation cell and a preparation method thereof.
Background
TOPCon solar cells (tunnel oxide passivation contacts, tunnel Oxide Passivated Contact) are a type of solar cell that uses an ultra-thin oxide layer as the passivation layer structure. An ultrathin tunneling oxide layer and a high-doped polycrystalline silicon thin layer are prepared on the back of the battery, and a passivation contact structure is formed between the ultrathin tunneling oxide layer and the high-doped polycrystalline silicon thin layer, the structure provides good surface passivation for the back of a silicon wafer, the ultrathin oxide layer can enable multi-electron tunneling to enter the polycrystalline silicon layer and simultaneously block minority carrier hole recombination, and electrons are transmitted transversely in the polycrystalline silicon layer and collected by metal, so that metal contact recombination current is greatly reduced, and open-circuit voltage and short-circuit current of the battery are improved.
At present, most of the contact passivation layers in TOPCON batteries are doped polysilicon layers, and the layers have certain advantages in conductivity, but the light absorption of the polysilicon layers has certain obstruction to the further effect of the batteries, the forbidden band is wider, and the light utilization rate is greatly reduced. Therefore, it is of great importance to explore the issues of improving the efficiency and alleviating the failure of the efficient light with regard to the passivation contact layer of the TOPCON cell.
The invention discloses a passivation contact solar cell and a manufacturing method thereof, and the passivation contact solar cell comprises a silicon substrate, a diffusion layer, a first passivation layer, a first electrode, an oxide layer, an intrinsic polycrystalline silicon layer, a doped polycrystalline silicon layer, a second passivation layer and a second electrode, wherein the passivation contact solar cell comprises a silicon substrate, a diffusion layer, a first passivation layer, a first electrode, an oxide layer, an intrinsic polycrystalline silicon layer, a doped polycrystalline silicon layer, a second passivation layer and a second electrode; the diffusion layer, the first passivation layer and the first electrode are sequentially stacked on the upper surface of the silicon substrate in the direction away from the silicon substrate, and the oxide layer, the intrinsic polycrystalline silicon layer, the doped polycrystalline silicon layer, the second passivation layer and the second electrode are sequentially stacked on the lower surface of the silicon substrate. Compared with the existing battery, the battery is provided with the intrinsic polycrystalline layer, the contact interface between the intrinsic polycrystalline layer and the oxide layer and the contact interface between the intrinsic polycrystalline layer and the doped polycrystalline silicon are increased due to the intrinsic polycrystalline layer, and the strength of a back electric field of the passivation contact solar battery is obviously improved due to the existence of the two contact interfaces, so that the passivation performance is enhanced, and the open-circuit voltage is improved.
The disadvantage is that the above patent discloses the formation of a silicon dioxide or silicon oxynitride layer on the substrate, which still has a high damage rate to light.
Disclosure of Invention
The invention provides a passivation structure applied to a contact passivation battery and a preparation method thereof, aiming at solving the problem of high light absorptivity of the contact passivation layer in the TOPCO battery.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a passivation structure for contact passivation battery comprises an N-type substrate and a passivation layer arranged on the N-type substrateTwo positive electrodes on the front surface of the substrate and two negative electrodes on the back surface of the N-type substrate, wherein the back surface of the N-type substrate is provided with SiO 2 A layer of SiO 2 The doped polycrystalline SiO is arranged on the layer x N y A layer.
In a conventional Topcon battery, the forbidden bandwidth of the back polysilicon is 1.1-1.3 eV, the absorption of visible light is serious, and in order to improve the situation, the invention improves the forbidden bandwidth of the doped polycrystalline layer and uses polycrystalline SiO x N y The band gap of the layer is 5-9 eV. The doping condition of the polycrystalline layer is adjusted to enable the work function of the polycrystalline layer to be lower than that of the tunneling SiOx layer, and the tunneling effect of the polycrystalline layer is achieved on the basis of reducing the light absorption of the polycrystalline layer, so that the battery efficiency of the battery is improved.
Preferably, the front surface of the N-type substrate is sequentially provided with a P+ layer and AlO from inside to outside x Layer and SiN x A layer.
Preferably, the positive electrode passes sequentially through SiN x Layer, alO x And a layer in contact with the P+ layer.
Preferably, the back surface of the N-type substrate is sequentially provided with SiO from inside to outside 2 Layer, doped polycrystalline SiO x N y Layer and SiN x A layer.
At present, in the photovoltaic field, a doped polycrystalline silicon layer is adopted as a contact passivation layer of the battery, but the light absorption of the layer is serious, and parasitic current is large, so that the contact passivation layer is a great obstacle for realizing a high-efficiency battery. The doped polycrystalline layer in the invention has relatively less light absorption and small parasitic current, and is one way for realizing the high-efficiency battery.
Preferably, the negative electrode passes through the SiN sequentially x Layer and partial thickness doped polycrystalline SiO x N y Layer, and doped polycrystalline SiO x N y The layers are in contact.
The negative electrode must be in contact with polycrystalline SiO x N y A layer that collects current and cannot directly contact the silicon substrate below the layer; the electrode end is made of polycrystalline SiO x N y Coating the electrode with polycrystalline SiO x N y The contact area of the layers, the collection effect of the current is enhanced,thereby improving the light conversion efficiency.
The preparation method of the passivation structure applied to the doped contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, and groove type double-sided texturing is adopted;
B. boron-expanding the front surface, and controlling the surface concentration to be 1E+19-2E+19/cm 3 ；
C. Removing the back BSG by acid and performing back etching, and then cleaning and reserving the front BSG layer, wherein the reflectivity after back etching is more than 32%;
D. adopting tubular oxidation to deposit a layer of SiO with the thickness of 1.4-1.6nm on the back surface of the silicon wafer 2 A layer, then SiO is deposited under a gas flow x N y The layers are doped in situ at the same time, and the doped rear resistance is about 20-40 omega/sq;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 900-920 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Preferably, the weight reduction of the groove type double-sided texturing in the step A is 0.3-0.35g.
Preferably, the acid in step C is HF or HNO 3 The method comprises the steps of carrying out a first treatment on the surface of the The back etching weight reduction is 0.2-0.5g.
Preferably, the gas flow rate in the step D is NH 3 With SiH 4 Flow ratio or N of (2) 2 O and SiH 4 The flow ratio of (2) is 0.2-5.
In the case of a polycrystalline SiOxNy layer, NH 3 /SiH 4 、N 2 O/SiH 4 The flow ratio is within 0.2-5, when the ratio exceeds 5, the passivation effect of the polycrystalline SiOxNy layer is poor, the required annealing temperature is relatively high, if NH3, N 2 The O flow is too large, the layer is difficult to form a polycrystal form, and the contact passivation effect is poor; the NH3 and N2O flow rates are too small, namely become zero, which is equivalent to a polysilicon layer, and the light absorption is relatively serious.
Preferably, siO in step D x N y The thickness of the layer is 120-140nm.
SiO x N y The thickness of the layer is too small, the electrode is easy to burn through the layer in the silk screen section; siO (SiO) x N y The thickness of the layer is too thick, light absorption is enhanced, and parasitic current increases.
Therefore, the invention has the following beneficial effects:
(1) The polysilicon layer in the conventional Topcon battery and POLO battery has a certain amount of light absorption, which affects the further improvement of the battery efficiency, and the polysilicon layer and the metal electrode are ensured to have lower contact resistance by properly doping and annealing at proper temperature by using a wide-bandgap passivation layer, namely a silicon oxynitride layer, so that the light absorption of the passivation layer is reduced, and the aim of synergy is fulfilled;
(2) In the process of preparing the passivation structure, the usage amount of silane is reduced, the deposition quality of the polycrystalline SiOxNy layer is improved, the cost is saved, the potential safety hazard is reduced, and the preparation efficiency is improved.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a flow chart of the preparation process of the present invention.
In the figure: 1. an N-type substrate; 2. a positive electrode; 3. a negative electrode; 4. SiO (SiO) 2 A layer; 5. doping polycrystalline SiO x N y A layer; 6. SiN (SiN) x A layer; 7. a P+ layer; 8. AlO (aluminum oxide) x A layer.
Detailed Description
The invention is further described below in connection with the following detailed description.
General examples
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. adopting an N-type monocrystalline silicon wafer, adopting groove type double-sided texturing, and reducing the weight to 0.3-0.35g;
B. boron-expanding the front surface, and controlling the surface concentration to be 1E+19-2E+19/cm 3 ；
C. Using acids (acids HF or HNO 3 ) Removing the back BSG and performing back etching, cleaning and reserving the front BSG layer, wherein the back etching weight is reduced by 0.2-0.5g, and the reflectivity after back etching is more than 32%;
D. adopting tubular oxidation to deposit a layer of SiO with the thickness of 1.4-1.6nm on the back surface of the silicon wafer 2 A layer, then SiO is deposited under a gas flow x N y The layers are doped in situ at the same time, and the doped rear resistance is about 20-40 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 Flow ratio or N of (2) 2 O and SiH 4 The flow ratio of (2) is 0.2-5; siO (SiO) x N y The thickness of the layer is 120-140nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 900-920 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Example 1
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and a passivation layer arranged on the front surface of the N-type substrate 1Two negative electrodes 3 on the back of the N-type substrate 1, wherein the back of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.32g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.5E+19/cm 3 ；
C. Removing the back BSG by adopting HF acid and performing back etching, then cleaning and reserving a front BSG layer, wherein the weight reduction of the back etching is 0.35g, and the reflectivity after the back etching is more than 32%;
D. a layer of SiO with the thickness of 1.5nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 30 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 2.5; siO (SiO) x N y The thickness of the layer was 130nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 910 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Example 2
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.3g;
B. boron-expanding the front surface, and controlling the surface concentration to be 1E+19/cm 3 ；
C. By HNO 3 Removing the back BSG and performing back etching, cleaning and reserving the front BSG layer, wherein the back etching weight is reduced to 0.2g, and the reflectivity after back etching is more than 32%;
D. a layer of SiO with the thickness of 1.4nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 20 omega/sq; the N is 2 O and SiH 4 The flow ratio of (2) is 0.2; siO (SiO) x N y The thickness of the layer was 120nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 900 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Example 3
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.35g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 2E+19/cm 3 ；
C. Using acid as HF or HNO 3 Removing the back BSG and performing back etching, cleaning and reserving the front BSG layer, wherein the back etching weight is reduced to 0.5g, and the reflectivity after back etching is more than 32%;
D. a layer of SiO with the thickness of 1.6nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ at the same time, and the doped rear resistor is about 40 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 5; siO (SiO) x N y The thickness of the layer was 140nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 920 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Example 4
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.31g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.2E+19/cm 3 ；
C. Removing the back BSG by adopting HF and performing back etching, then cleaning and reserving a front BSG layer, wherein the weight reduction of the back etching is 0.3g, and the reflectivity after the back etching is more than 32%;
D. a layer of SiO with the thickness of 1.45nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 35 omega/sq; the N is 2 O and SiH 4 The flow ratio of (2) is 0.5; siO (SiO) x N y The thickness of the layer was 125nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 905 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Example 5
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.34g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.8E+19/cm 3 ；
C. Using acid as HF or HNO 3 Removing the back BSG and performing back etching, cleaning and reserving the front BSG layer, wherein the back etching weight is reduced to 0.4g, and the reflectivity after back etching is more than 32%;
D. by tubular oxidationDepositing a layer of SiO with the thickness of 1.55nm on the back surface of the silicon wafer 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 35 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 4.5; siO (SiO) x N y The thickness of the layer was 135nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 915 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Comparative example 1 (differing from example 1 in that the doped polycrystalline SiO was prepared x N y The layer is replaced by a polysilicon layer. ) A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 A polysilicon layer 5 is provided on layer 4.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 is in contact with a portion of the thickness of polysilicon layer 5, and with polysilicon layer 5.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.32g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.5E+19/cm 3 ；
C. Removing the back BSG by adopting HF acid and performing back etching, then cleaning and reserving a front BSG layer, wherein the weight reduction of the back etching is 0.35g, and the reflectivity after the back etching is more than 32%;
D. a layer of SiO with the thickness of 1.5nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 The layer, then deposit the polycrystalline silicon layer under the airstream, carry on the in situ doping at the same time, the doped rear block is about 30 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 2.5; siO (SiO) x N y The thickness of the layer was 130nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 910 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Comparative example 2 (differing from example 1 in that the gas flow rate in step D was NH 3 With SiH 4 The flow ratio of (2) was 7.5. )
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, and doped polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.32g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.5E+19/cm 3 ；
C. Removing the back BSG by adopting HF acid and performing back etching, then cleaning and reserving a front BSG layer, wherein the weight reduction of the back etching is 0.35g, and the reflectivity after the back etching is more than 32%;
D. a layer of SiO with the thickness of 1.5nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 30 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 7.5; siO (SiO) x N y The thickness of the layer was 130nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 910 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Comparative example 3 (differing from example 1 in that the thickness of the SiOxNy layer is 170 nm.)
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The back surface of the N-type substrate 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and partial thickness of doped polycrystalline SiO x N y Layer 5, anddoping polycrystalline SiO x N y The layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.32g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.5E+19/cm 3 ；
C. Removing the back BSG by adopting HF acid and performing back etching, then cleaning and reserving a front BSG layer, wherein the weight reduction of the back etching is 0.35g, and the reflectivity after the back etching is more than 32%;
D. a layer of SiO with the thickness of 1.5nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 30 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 2.5; siO (SiO) x N y The thickness of the layer was 170nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 910 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Comparative example 4 (differing from example 1 in that the negative electrode was doped with polycrystalline SiO x N y The layer surfaces are in contact. ) A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1, and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein the back surface of the N-type substrate 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with doped polycrystalline SiO x N y Layer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P+ layer 7 and AlO from inside to outside x Layer 8 and SiN x Layer 6. The positive electrode 2 sequentially passes through SiN x Layer 6, alO x Layer 8 is in contact with p+ layer 7. The N-type linerThe back surface of the bottom 1 is sequentially provided with SiO from inside to outside 2 Layer 4, doped polycrystalline SiO x N y Layer 5 and SiN x Layer 6. The negative electrode 3 sequentially passes through the SiN x Layer 6 and doped polycrystalline SiO x N y The surfaces of the layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction is 0.32g;
B. boron expansion is carried out on the front surface, and the surface concentration is controlled to be 1.5E+19/cm 3 ；
C. Removing the back BSG by adopting HF acid and performing back etching, then cleaning and reserving a front BSG layer, wherein the weight reduction of the back etching is 0.35g, and the reflectivity after the back etching is more than 32%;
D. a layer of SiO with the thickness of 1.5nm is deposited on the back surface of the silicon wafer by adopting tubular oxidation 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistor is about 30 omega/sq; the flow rate of the air flow is NH 3 With SiH 4 The flow ratio of (2) is 2.5; siO (SiO) x N y The thickness of the layer was 130nm;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 910 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
Table 1 items and passivation Structure of contact passivation cell
Conclusion analysis: the results of examples 1-5 show that only the passivation structure of the contact passivation battery prepared by the structure of the invention has higher battery efficiency and current density, higher sunlight conversion efficiency and greatly reduced breakage rate of sunlight.
Comparative example 1 differs from example 1 in that the doped polycrystalline SiO was prepared x N y The layer is replaced by a polysilicon layer;
comparative example 2 differs from example 1 in that the gas flow rate in step D is NH 3 With SiH 4 The flow ratio of (2) is 7.5; if the ratio exceeds 5, the passivation effect of the polycrystalline SiOxNy layer becomes poor, the annealing temperature required becomes relatively high, and if NH 3 、N 2 The O flow is too large, the layer is difficult to form a polycrystal form, so that the contact passivation effect is poor, and the related performance is reduced.
Comparative example 3 differs from example 1 in that SiO x N y The thickness of the layer was 170nm; when the thickness is too large, light absorption is enhanced, parasitic current is increased, and the corresponding performance is reduced compared with that of example 1.
Comparative example 4 differs from example 1 in that the negative electrode was doped with polycrystalline SiO x N y The surfaces of the layers are contacted; the contact area thereof becomes smaller, the current collecting ability becomes worse, and the corresponding performance is lowered as compared with example 1.
From the data of examples 1 to 5 and comparative examples 1 to 4, it is understood that the above requirements can be satisfied in all aspects only by the schemes within the scope of the claims of the present invention, and an optimized scheme can be obtained, resulting in a highly efficient passivation structure battery with optimal performance. And the replacement/addition of each deposition layer or the change of the preparation sequence can bring about corresponding negative effects.
The raw materials and equipment used in the invention are common raw materials and equipment in the field unless specified otherwise; the methods used in the present invention are conventional in the art unless otherwise specified.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and any simple modification, variation and equivalent transformation of the above embodiment according to the technical substance of the present invention still fall within the scope of the technical solution of the present invention.
Claims (7)
1. A passivation structure applied to a contact passivation battery is characterized by comprising an N-type substrate (1), two positive electrodes (2) arranged on the front surface of the N-type substrate (1) and two negative electrodes (3) arranged on the back surface of the N-type substrate (1), wherein SiO is arranged on the back surface of the N-type substrate (1) 2 Layer (4), said SiO 2 The doped polycrystal SiO is arranged on the layer (4) x N y Layer (5), siO x N y The thickness of the layer is 120-140nm;
the back surface of the N-type substrate (1) is sequentially provided with SiO from inside to outside 2 Layer (4), doped polycrystalline SiO x N y Layer (5) and SiN x A layer (6);
the negative electrode (3) sequentially penetrates through the SiN x Layer (6) and part of the thickness of doped polycrystalline SiO x N y Layer (5), and doped polycrystalline SiO x N y The layers (5) are in contact.
2. The passivation structure for contact passivation cells according to claim 1, characterized in that the front surface of the N-type substrate (1) is provided with a p+ layer (7) and AlO from inside to outside in sequence x Layer (8) and SiN x And a layer (6).
3. A passivation structure for contact passivation cells according to claim 2, characterized in that the positive electrode (2) passes sequentially through SiN x Layer (6), alO x Layer (8) in contact with the P+ layer (7).
4. A method of manufacturing a passivation structure for contact passivation of a battery according to any one of claims 1-3, comprising the steps of:
A. an N-type monocrystalline silicon wafer is adopted, and groove type double-sided texturing is adopted;
B. boron-expanding the front surface, and controlling the surface concentration to be 1E+19-2E+19/cm 3 ；
C. Removing the back BSG by acid and performing back etching, and then cleaning and reserving the front BSG layer, wherein the reflectivity after back etching is more than 32%;
D. adopting tubular oxidation to deposit a layer of SiO with the thickness of 1.4-1.6nm on the back surface of the silicon wafer 2 A layer, then SiO is deposited under a gas flow x N y The layer is doped in situ, and the doped rear resistance is about 20-40 omega/sq;
E. then carrying out front surface detour plating on the doped silicon wafer and annealing in the environment of 900-920 ℃;
F. depositing a thin layer of AlO on the front side of a silicon wafer x And double-sided SiN is performed x Coating a layer;
G. and (5) screen printing, then carrying out optical annealing and sintering test to finish the preparation of the battery piece.
5. The method of claim 4, wherein the weight reduction of the groove type double-sided texturing in the step A is 0.3-0.35g.
6. The method of claim 4, wherein the acid in step C is HF or HNO 3 The method comprises the steps of carrying out a first treatment on the surface of the The back etching weight reduction is 0.2-0.5g.
7. The method of claim 4, wherein the gas flow in step D is NH 3 、N 2 One of O and SiH 4 NH of the mixed gas flow of (2) 3 Or N 2 O and SiH 4 The flow ratio of (2) is 0.2-5.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393058A (en) * | 2014-10-30 | 2015-03-04 | 广东爱康太阳能科技有限公司 | Solar cell resisting potential-induced degradation and preparation method thereof |
| CN109065639A (en) * | 2018-06-22 | 2018-12-21 | 晶澳（扬州）太阳能科技有限公司 | N-type crystalline silicon solar battery and preparation method, photovoltaic module |
| CN208637428U (en) * | 2018-06-22 | 2019-03-22 | 晶澳（扬州）太阳能科技有限公司 | N-type crystalline silicon solar battery and photovoltaic module |
| CN110707159A (en) * | 2019-08-29 | 2020-01-17 | 东方日升（常州）新能源有限公司 | P-type crystalline silicon solar cell with front surface and back surface in full-area contact passivation and preparation method thereof |
| CN111628050A (en) * | 2020-06-11 | 2020-09-04 | 常州时创能源股份有限公司 | Method for realizing electronic local passivation contact, crystalline silicon solar cell and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011020124A2 (en) * | 2009-08-14 | 2011-02-17 | Gigasi Solar, Inc. | Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof |
| US9335444B2 (en) * | 2014-05-12 | 2016-05-10 | Corning Incorporated | Durable and scratch-resistant anti-reflective articles |
| US9947825B2 (en) * | 2015-12-18 | 2018-04-17 | Lg Electronics Inc. | Method of manufacturing solar cell |
| CN111524983B (en) * | 2020-04-03 | 2021-07-27 | 常州大学 | Efficient crystalline silicon battery with double-sided selective emitter and preparation method thereof |
| CN111584667A (en) * | 2020-06-09 | 2020-08-25 | 山西潞安太阳能科技有限责任公司 | Novel N-type crystalline silicon TOPCon battery structure and preparation process thereof |
-
2020
- 2020-12-16 CN CN202011490646.4A patent/CN112670352B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393058A (en) * | 2014-10-30 | 2015-03-04 | 广东爱康太阳能科技有限公司 | Solar cell resisting potential-induced degradation and preparation method thereof |
| CN109065639A (en) * | 2018-06-22 | 2018-12-21 | 晶澳（扬州）太阳能科技有限公司 | N-type crystalline silicon solar battery and preparation method, photovoltaic module |
| CN208637428U (en) * | 2018-06-22 | 2019-03-22 | 晶澳（扬州）太阳能科技有限公司 | N-type crystalline silicon solar battery and photovoltaic module |
| CN110707159A (en) * | 2019-08-29 | 2020-01-17 | 东方日升（常州）新能源有限公司 | P-type crystalline silicon solar cell with front surface and back surface in full-area contact passivation and preparation method thereof |
| CN111628050A (en) * | 2020-06-11 | 2020-09-04 | 常州时创能源股份有限公司 | Method for realizing electronic local passivation contact, crystalline silicon solar cell and preparation method thereof |
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