CN112670352A - Passivation structure applied to contact passivation battery and preparation method thereof - Google Patents
Passivation structure applied to contact passivation battery and preparation method thereof Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- 238000000137 annealing Methods 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 81
- 229910004205 SiNX Inorganic materials 0.000 claims description 61
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 238000000151 deposition Methods 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 16
- 229910017107 AlOx Inorganic materials 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000011065 in-situ storage Methods 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 239000013585 weight reducing agent Substances 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 22
- 230000031700 light absorption Effects 0.000 abstract description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000032900 absorption of visible light Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the technical field of solar cells, and discloses a passivation structure applied to a contact passivation cell and a preparation method thereof aiming at the problem of high light absorption rate of a contact passivation layer in a TOPCon cell in the prior art2Layer of said SiO2With doped polycrystalline SiO on the layerxNyAnd (3) a layer. The invention uses the doped polycrystalline silicon oxynitride layer to replace the polycrystalline silicon layer, and reduces the light absorption of the contact passivation layer and improves the efficiency of the contact passivation type battery through doping and annealing under proper conditions on the basis of ensuring that the contact resistance is not changed greatly.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a passivation structure applied to a contact passivation cell and a preparation method thereof.
Background
A TOPCon solar cell (Tunnel Oxide Passivated Contact) is a solar cell using an ultra-thin Oxide layer as a passivation layer structure. The structure provides good surface passivation for the back of a silicon wafer, the ultrathin oxide layer can enable multi-electron tunneling to enter the polycrystalline silicon layer and simultaneously block minority hole recombination, and then electrons are transversely transmitted in the polycrystalline silicon layer and collected by metal, so that metal contact recombination current is greatly reduced, and open-circuit voltage and short-circuit current of the battery are improved.
Most of contact passivation layers in the TOPCon battery at present are doped polycrystalline silicon layers, although the conductivity of the layers has certain advantages, the light absorption of the polycrystalline silicon layers has certain obstruction on the further improvement of the battery, the forbidden band is wide, and the light utilization rate is greatly reduced. Therefore, it is important to explore the issues of improving the efficiency and alleviating the efficiency of light failure of the passivation contact layer of TOPCon battery.
The invention discloses a passivated contact solar cell, which comprises a silicon substrate, a diffusion layer, a first passivation layer, a first electrode, an oxidation layer, an intrinsic polycrystalline silicon layer, a doped polycrystalline silicon layer, a second passivation layer and a second electrode, wherein the diffusion layer is arranged on the silicon substrate; the silicon substrate comprises a diffusion layer, a first passivation layer and a first electrode which are sequentially stacked, wherein the diffusion layer, the first passivation layer and the first electrode are distributed on the upper surface of the silicon substrate in a direction away from the silicon substrate, and an oxide layer, an intrinsic polycrystalline silicon layer, a doped polycrystalline silicon layer, a second passivation layer and a second electrode which are sequentially stacked are distributed on the lower surface of the silicon substrate. Compared with the existing cell, the cell is provided with the intrinsic polycrystalline layer, the contact interface between the intrinsic polycrystalline layer and the oxide layer and the contact interface between the intrinsic polycrystalline layer and the doped polycrystalline silicon are increased due to the intrinsic polycrystalline layer, the intensity of a back electric field of the passivated contact solar cell is obviously improved due to the two contact interfaces, the passivation performance is enhanced, and the open-circuit voltage is improved.
The disadvantage is that the above patent discloses the formation of a silicon dioxide or silicon oxynitride layer underneath the silicon substrate, which still has a high damage rate to light.
Disclosure of Invention
The invention provides a passivation structure applied to a contact passivation battery and a preparation method thereof, aiming at overcoming the problem of high light absorption rate of a contact passivation layer in a TOPCon battery.
In order to achieve the purpose, the invention adopts the following technical scheme:
a passivation structure applied to a contact passivation battery comprises an N-type substrate, two positive electrodes arranged on the front side of the N-type substrate and two negative electrodes arranged on the back side of the N-type substrate, wherein SiO is arranged on the back side of the N-type substrate2Layer of said SiO2With doped polycrystalline SiO on the layerxNyAnd (3) a layer.
In the conventional Topcon battery, the forbidden bandwidth of back polysilicon is 1.1-1.3 eV, and the absorption of visible light is serious, and in order to improve the situation, the forbidden bandwidth of a doped polycrystalline layer is increased, and polycrystalline SiO is usedxNyThe layer has a forbidden band width of 5-9 eV. The doping condition of the polycrystalline layer is adjusted to enable the work function of the polycrystalline layer to be lower than that of the tunneling SiOx layer, so that the tunneling effect of the polycrystalline layer is realized on the basis of reducing light absorption of the polycrystalline layer, and the battery efficiency of the battery is improved.
Preferably, the front surface of the N-type substrate is provided with a P + layer and AlO in sequence from inside to outsidexLayer and SiNxAnd (3) a layer.
Preferably, the positive electrode is sequentially crossed by SiNxLayer, AlOxA layer in contact with the P + layer.
Preferably, SiO is sequentially arranged on the back surface of the N-type substrate from inside to outside2Layer, doped polycrystalline SiOxNyLayer and SiNxAnd (3) a layer.
In the field of photovoltaic, a doped polycrystalline silicon layer is adopted in the contact passivation layer of the cell, but the doped polycrystalline silicon layer has serious light absorption and large parasitic current, and is a great obstacle to realizing a high-efficiency cell. The doped polycrystalline layer in the invention has relatively less light absorption and small parasitic current, and is one of approaches for realizing a high-efficiency battery.
Preferably, the negative electrode is sequentially passed through the SiNxLayer and partial thickness doped polycrystalline SiOxNyLayer of doped polycrystalline SiOxNyThe layers are in contact.
The negative electrode must be in contact with polycrystalline SiOxNyA layer that collects current and cannot directly contact the silicon substrate below the layer; electrode tip is covered with polycrystalline SiOxNyLayer coating, enlarging the electrode and the polycrystalline SiOxNyThe contact area of the layer enhances the current collection effect, and further improves the light conversion efficiency.
The preparation method of the passivation structure applied to the doped contact passivation battery comprises the following preparation steps:
A. adopting an N-type monocrystalline silicon wafer and adopting groove type double-sided texturing;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1E +19-2E +19/cm3；
C. Removing BSG on the back surface by adopting acid, etching the back surface, cleaning and reserving a BSG layer on the front surface, wherein the reflectivity is more than 32% after etching the back surface;
D. depositing a layer of SiO with the thickness of 1.4-1.6nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 20-40 omega/sq;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at the temperature of 900-920 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd is combined withPerforming double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Preferably, the weight reduction weight of the slot type double-sided texturing in the step A is 0.3-0.35 g.
Preferably, the acid in step C is HF or HNO3(ii) a The back etching weight is 0.2-0.5 g.
Preferably, the flow rate of the gas stream in the step D is NH3And SiH4Flow ratio of (1) or (N)2O and SiH4The flow ratio of (A) is 0.2-5.
If it is a polycrystalline SiOxNy layer, NH3/SiH4、N2O/SiH4The flow ratio is within 0.2-5, and when the ratio exceeds 5, the passivation effect of the polycrystalline SiOxNy layer is deteriorated, and the required annealing temperature is relatively high, if NH3 and N are contained2The O flow is too large, the layer is difficult to form a polycrystalline form, and the contact passivation effect is poor; NH3 and N2O flow rates are too small, i.e., become zero, and are equivalent to polysilicon layers, and the light absorption is relatively severe.
Preferably, SiO in step DxNyThe thickness of the layer was 120-140 nm.
SiOxNyThe thickness of the layer is too small, and the electrode is easy to burn through the layer in the silk screen working section; SiO 2xNyIf the layer thickness is too thick, light absorption is enhanced and parasitic current increases.
Therefore, the invention has the following beneficial effects:
(1) the conventional Topcon battery and POLO battery have a certain amount of light absorption of the polycrystalline silicon layer, which affects the further improvement of the battery efficiency, and the light absorption of the passivation layer is reduced by using a wide-band-gap passivation layer, namely a silicon oxynitride layer, and carrying out proper doping and annealing at proper temperature on the basis of ensuring that the contact resistance of the polycrystalline layer and a metal electrode is lower, so that the purpose of synergy is realized;
(2) in the process of preparing the passivation structure, the use amount of silane is reduced, the deposition quality of the polycrystalline SiOxNy layer is improved, meanwhile, the cost is saved, the potential safety hazard is reduced, and the preparation efficiency is improved.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a flow chart of the manufacturing process of the present invention.
In the figure: 1. an N-type substrate; 2. a positive electrode; 3. a negative electrode; 4. SiO 22A layer; 5. doping polycrystalline SiOxNyA layer; 6. SiNxA layer; 7. a P + layer; 8. AlO (aluminum oxide)xAnd (3) a layer.
Detailed Description
The invention is further described with reference to specific embodiments.
General examples
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidex Layer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. adopting an N-type monocrystalline silicon piece, and adopting groove type double-sided texturing, wherein the weight reduction weight is 0.3-0.35 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1E +19-2E +19/cm3；
C. Using an acid (the acid being HF or HNO)3) Removing BSG on the back, etching the back, cleaning and reserving BSG layer on the front, reducing the weight of back etching to 0.2-0.5g, and etching the backThe refractive index is more than 32 percent;
D. depositing a layer of SiO with the thickness of 1.4-1.6nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 20-40 omega/sq; the flow rate of the gas flow is NH3And SiH4Flow ratio of (1) or (N)2O and SiH4The flow ratio of (A) is 0.2-5; SiO 2xNyThe thickness of the layer is 120-140 nm;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at the temperature of 900-920 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Example 1
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.32 g;
B. boron diffusion control is carried out on the front surfaceThe surface concentration is 1.5E +19/cm3；
C. Removing BSG on the back by adopting HF acid, etching the back, cleaning and reserving a BSG layer on the front, wherein the back etching weight is reduced to 0.35g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.5nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 30 omega/sq; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 2.5; SiO 2xNyThe thickness of the layer is 130 nm;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at 910 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Example 2
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.3 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1E +19/cm3；
C. By HNO3Removing the BSG on the back, etching the back, cleaning and reserving the BSG layer on the front, wherein the back etching weight is 0.2g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.4nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 20 omega/sq; said N is2O and SiH4The flow ratio of (a) to (b) is 0.2; SiO 2xNyThe thickness of the layer is 120 nm;
E. then, carrying out front surface unwinding plating on the doped silicon wafer and annealing at the temperature of 900 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Example 3
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.35 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 2E +19/cm3；
C. Using acid as HF or HNO3Removing the BSG on the back, etching the back, cleaning and reserving the BSG layer on the front, wherein the back etching weight is 0.5g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.6nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 40 omega/sq; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 5; SiO 2xNyThe thickness of the layer was 140 nm;
E. then, carrying out front surface unwinding plating on the doped silicon wafer and annealing at 920 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Example 4
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partDoped polycrystalline SiO with different thicknessxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.31 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1.2E +19/cm3；
C. Removing BSG on the back surface and etching the back surface by adopting HF, cleaning and reserving a BSG layer on the front surface, wherein the back surface etching weight is reduced to 0.3g, and the reflectivity is more than 32% after the back surface etching;
D. depositing a layer of SiO with the thickness of 1.45nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 35 omega/sq; said N is2O and SiH4The flow ratio of (a) to (b) is 0.5; SiO 2xNyThe thickness of the layer was 125 nm;
E. then, carrying out front surface unwinding plating on the doped silicon wafer and annealing at the temperature of 905 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Example 5
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, dopingHetero-polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.34 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1.8E +19/cm3；
C. Using acid as HF or HNO3Removing the BSG on the back, etching the back, cleaning and reserving the BSG layer on the front, wherein the back etching weight is 0.4g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.55nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 35 omega/sq; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 4.5; SiO 2xNyThe thickness of the layer was 135 nm;
E. then, carrying out front surface unwinding plating on the doped silicon wafer and annealing in a 915 ℃ environment;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Comparative example 1 (different from example 1 in that the doped polycrystalline SiOxNyThe layer is replaced with a polysilicon layer. ) A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2 A polysilicon layer 5 is provided on layer 4.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer from inside to outside7、AlOxLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 is in contact with a portion of the thickness of polysilicon layer 5, and polysilicon layer 5.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.32 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1.5E +19/cm3；
C. Removing BSG on the back by adopting HF acid, etching the back, cleaning and reserving a BSG layer on the front, wherein the back etching weight is reduced to 0.35g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.5nm on the back of a silicon wafer by adopting tubular oxidation2Depositing a polysilicon layer in airflow, and carrying out in-situ doping, wherein the sheet resistance is about 30 omega/sq after doping; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 2.5; SiO 2xNyThe thickness of the layer is 130 nm;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at 910 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Comparative example 2 (differing from example 1 in that the gas flow rate in step D is NH)3And SiH4The flow ratio of (2) was 7.5. )
A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.32 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1.5E +19/cm3；
C. Removing BSG on the back by adopting HF acid, etching the back, cleaning and reserving a BSG layer on the front, wherein the back etching weight is reduced to 0.35g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.5nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 30 omega/sq; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 7.5; SiO 2xNyThe thickness of the layer is 130 nm;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at 910 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Comparative example 3 (differing from example 1 in that the thickness of the SiOxNy layer is 170 nm.)
Application of the inventionThe passivation structure of the contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and partial thickness of doped polycrystalline SiOxNyLayer 5, and doped polycrystalline SiOxNyThe layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.32 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1.5E +19/cm3；
C. Removing BSG on the back by adopting HF acid, etching the back, cleaning and reserving a BSG layer on the front, wherein the back etching weight is reduced to 0.35g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.5nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 30 omega/sq; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 2.5; SiO 2xNyThe thickness of the layer was 170 nm;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at 910 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Comparative example 4 (differing from example 1 in that the negative electrode is doped with polycrystalline SiOxNyThe surfaces of the layers are in contact. ) A passivation structure applied to a contact passivation battery comprises an N-type substrate 1, two positive electrodes 2 arranged on the front surface of the N-type substrate 1 and two negative electrodes 3 arranged on the back surface of the N-type substrate 1, wherein SiO is arranged on the back surface of the N-type substrate 12Layer 4 of said SiO2A doped polycrystalline SiO layer is provided on layer 4xNyLayer 5.
The front surface of the N-type substrate 1 is sequentially provided with a P + layer 7 and AlO from inside to outsidexLayer 8 and SiNxAnd (6) a layer. The positive electrode 2 sequentially penetrates through SiNxLayer 6, AlOxLayer 8, in contact with P + layer 7. The back of the N-type substrate 1 is sequentially provided with SiO from inside to outside2Layer 4, doped polycrystalline SiOxNyLayer 5 and SiNxAnd (6) a layer. The negative electrode 3 sequentially penetrates through the SiNxLayer 6 and doped polycrystalline SiOxNyThe surfaces of the layers 5 are in contact.
The preparation method of the passivation structure applied to the contact passivation battery comprises the following preparation steps:
A. an N-type monocrystalline silicon wafer is adopted, groove type double-sided texturing is adopted, and the weight reduction weight is 0.32 g;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1.5E +19/cm3；
C. Removing BSG on the back by adopting HF acid, etching the back, cleaning and reserving a BSG layer on the front, wherein the back etching weight is reduced to 0.35g, and the reflectivity is more than 32% after the back etching;
D. depositing a layer of SiO with the thickness of 1.5nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 30 omega/sq; the flow rate of the gas flow is NH3And SiH4The flow ratio of (a) to (b) is 2.5; SiO 2xNyThe thickness of the layer is 130 nm;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at 910 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
Table 1 items and performance parameters of passivation structures for contact passivated cells
Conclusion analysis: from the results of examples 1 to 5, it can be seen that only the passivation structure of the contact passivation cell prepared by using the structure of the present invention has high cell efficiency and current density, high sunlight conversion efficiency, and greatly reduced sunlight damage rate.
Comparative example 1 differs from example 1 in that the doped polycrystalline SiOxNyReplacing the layer with a polysilicon layer;
comparative example 2 differs from example 1 in that the gas flow rate in step D is NH3And SiH4The flow ratio of (a) to (b) is 7.5; when the ratio exceeds 5, the passivation effect of the polycrystalline SiOxNy layer may be deteriorated, and the required annealing temperature may be relatively high, if NH is added3、N2The flow of O is too high and the layer is difficult to form in a polycrystalline form, resulting in poor contact passivation and associated performance degradation.
Comparative example 3 differs from example 1 in that SiOxNyThe thickness of the layer was 170 nm; if the thickness is too large, light absorption is enhanced, parasitic current is increased, and corresponding performance is reduced compared with that of example 1.
Comparative example 4 differs from example 1 in that the negative electrode is doped with polycrystalline SiOxNyThe surface of the layers are contacted; the contact area becomes smaller, the current collecting ability becomes worse, and the corresponding performance is lowered compared to example 1.
It is clear from the data of examples 1 to 5 and comparative examples 1 to 4 that only the solutions within the scope of the claims of the present invention satisfy the above requirements in all respects, resulting in an optimized solution and a high efficiency passivated structure cell with optimal performance. And replacement/addition/subtraction of each deposition layer or change of preparation sequence can bring corresponding negative effects.
The raw materials and equipment used in the invention are common raw materials and equipment in the field if not specified; the methods used in the present invention are conventional in the art unless otherwise specified.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and all simple modifications, alterations and equivalents of the above embodiments according to the technical spirit of the present invention are still within the protection scope of the technical solution of the present invention.
Claims (10)
1. The passivation structure applied to the contact passivation battery is characterized by comprising an N-type substrate (1), two positive electrodes (2) arranged on the front surface of the N-type substrate (1) and two negative electrodes (3) arranged on the back surface of the N-type substrate (1), wherein SiO is arranged on the back surface of the N-type substrate (1)2Layer (4), said SiO2A layer (4) is provided with doped polycrystalline SiOxNyA layer (5).
2. Passivation structure applied to a contact passivated cell according to claim 1 characterized in that the front side of the N-type substrate (1) is provided with a P + layer (7) and AlO in sequence from inside to outsidexLayer (8) and SiNxA layer (6).
3. Passivation structure for a contact passivated battery according to claim 2 characterized by that the positive electrode (2) is sequentially through SiNxLayer (6), AlOxA layer (8) in contact with the P + layer (7).
4. Passivation structure for a contact passivated cell according to claim 1 or 2 characterized by that the back of the N-type substrate (1) is provided with SiO from inside to outside in sequence2Layer (4), doped polycrystalline SiOxNyLayer (5)) And SiNxA layer (6).
5. Passivation structure for a contact passivated battery according to claim 1 or 2 characterized by that said negative electrode (3) is sequentially threaded through said SiNxLayer (6) and partial thickness of doped polycrystalline SiOxNyLayer (5) with doped polycrystalline SiOxNyThe layers (5) are in contact.
6. A method for the preparation of a passivation structure for use in a contact passivated battery according to any of claims 1-5 comprising the steps of:
A. adopting an N-type monocrystalline silicon wafer and adopting groove type double-sided texturing;
B. performing boron diffusion on the front surface, and controlling the surface concentration to be 1E +19-2E +19/cm3；
C. Removing BSG on the back surface by adopting acid, etching the back surface, cleaning and reserving a BSG layer on the front surface, wherein the reflectivity is more than 32% after etching the back surface;
D. depositing a layer of SiO with the thickness of 1.4-1.6nm on the back of a silicon wafer by adopting tubular oxidation2Layer, then depositing SiO under gas flowxNySimultaneously carrying out in-situ doping on the layer, wherein the sheet resistance after doping is about 20-40 omega/sq;
E. then carrying out front surface unwinding plating on the doped silicon wafer and annealing at the temperature of 900-920 ℃;
F. depositing a thin layer of AlO on the front surface of a silicon waferxAnd performing double-sided SiNxCoating a film;
G. and (4) performing screen printing, then performing light annealing, and performing sintering test to finish the preparation of the cell.
7. A passivation structure for contact passivated cells according to claim 6 wherein the weight reduction of the slot-type double sided texturing in step A is 0.3-0.35 g.
8. A passivation structure for contact passivated cells according to claim 6 wherein step CThe acid is HF or HNO3(ii) a The back etching weight is 0.2-0.5 g.
9. The method as claimed in claim 6, wherein the gas flow rate in step D is NH3And SiH4Flow ratio of (1) or (N)2O and SiH4The flow ratio of (A) is 0.2-5.
10. The method of claim 6, wherein the step D is SiOxNyThe thickness of the layer was 120-140 nm.
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