CN112640133A - Method for manufacturing solar cell, and solar cell module - Google Patents
Method for manufacturing solar cell, and solar cell module Download PDFInfo
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- CN112640133A CN112640133A CN201980057021.8A CN201980057021A CN112640133A CN 112640133 A CN112640133 A CN 112640133A CN 201980057021 A CN201980057021 A CN 201980057021A CN 112640133 A CN112640133 A CN 112640133A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention provides a method for manufacturing a solar cell, which can simplify the formation of a transparent electrode layer. The method for manufacturing the solar cell sequentially comprises the following steps: the method for manufacturing the semiconductor device includes the steps of forming conductive semiconductor layers (25, 35) on the back surface side of a substrate (11), forming a transparent conductive film on the conductive semiconductor layers (25, 35), forming metal electrode layers (29, 39) on the conductive semiconductor layers (25, 35) through the transparent conductive film, and patterning the transparent conductive film to form transparent electrode layers (28, 38) separated from each other. In the metal electrode layer forming step, a printing material containing a metal material, a resin material and a solvent is printed and cured to form metal electrode layers (29, 39), a resin film (40) in which the resin material is present in a biased manner is formed on the peripheral edges of the metal electrode layers (29, 39), and in the transparent electrode layer forming step, the transparent conductive film is patterned using the metal electrode layer (29) and the resin film (40) on the peripheral edges thereof, and the metal electrode layer (39) and the resin film (40) on the peripheral edges thereof as masks.
Description
Technical Field
The present invention relates to a method for manufacturing a back electrode type (back contact type) solar cell, a back electrode type solar cell, and a solar cell module including the same.
Background
As a solar cell using a semiconductor substrate, there are a double-sided electrode type solar cell in which electrodes are formed on both the light receiving surface side and the back surface side, and a back electrode type solar cell in which an electrode is formed only on the back surface side. In the double-sided electrode type solar cell, since an electrode is formed on the light receiving surface side, sunlight is shielded by the electrode. On the other hand, in the back-electrode type solar cell, since no electrode is formed on the light-receiving surface side, the light receiving rate of sunlight is higher than that in the double-electrode type solar cell. Patent document 1 discloses a back electrode type solar cell.
The solar cell described in patent document 1 includes: the semiconductor device includes a semiconductor substrate, a first conductive type semiconductor layer and a first electrode layer sequentially stacked on a back surface side of the semiconductor substrate, and a second conductive type semiconductor layer and a second electrode layer sequentially stacked on another portion of the back surface side of the semiconductor substrate. To prevent short circuits, the first electrode layer and the second electrode layer are separated from each other.
Patent document 1: japanese patent laid-open publication No. 2013-131586
Generally, the first electrode layer and the second electrode layer include a transparent electrode layer and a metal electrode layer, respectively. The metal electrode layer can be formed by relatively easily separating the metal electrode layer by, for example, a screen printing method using silver paste. On the other hand, the transparent electrode layer needs to be formed by, for example, photolithography separation using a mask, and the formation process is relatively complicated.
Disclosure of Invention
The present invention aims to provide a method for manufacturing a solar cell, and a solar cell module, which can simplify the formation of a transparent electrode layer.
A method for manufacturing a back electrode type solar cell according to the present invention is a method for manufacturing a back electrode type solar cell, the back electrode type solar cell including: a semiconductor substrate having two main surfaces, a first conductive type semiconductor layer and a second conductive type semiconductor layer disposed on one main surface side of the semiconductor substrate, a first transparent electrode layer and a first metal electrode layer corresponding to the first conductive type semiconductor layer, and a second transparent electrode layer and a second metal electrode layer corresponding to the second conductive type semiconductor layer, the method for manufacturing a solar cell sequentially comprising: a semiconductor layer forming step of forming a first conductivity type semiconductor layer on one main surface side of a semiconductor substrate and a second conductivity type semiconductor layer on the other main surface side of the semiconductor substrate; a transparent conductive film forming step of forming a transparent conductive film on the first conductive type semiconductor layer and the second conductive type semiconductor layer so as to straddle them; a metal electrode layer forming step of forming a first metal electrode layer on the first conductive type semiconductor layer with the transparent conductive film interposed therebetween, and forming a second metal electrode layer on the second conductive type semiconductor layer with the transparent conductive film interposed therebetween; and a transparent electrode layer forming step of forming a first transparent electrode layer and a second transparent electrode layer separated from each other by patterning the transparent conductive film, wherein in the metal electrode layer forming step, a printing material including a granular metal material, a resin material, and a solvent is printed and cured to form the first metal electrode layer and the second metal electrode layer, a resin film in which the resin material is present in a biased manner is formed on a periphery of the first metal electrode layer and a periphery of the second metal electrode layer, and in the transparent electrode layer forming step, the transparent conductive film is patterned using the first metal electrode layer and the resin film on the periphery thereof, and the second metal electrode layer and the resin film on the periphery thereof as masks.
The solar cell according to the present invention is a back electrode type solar cell, and includes: the semiconductor device includes a semiconductor substrate having two main surfaces, a first conductive type semiconductor layer and a second conductive type semiconductor layer arranged on one main surface side of the semiconductor substrate, a first transparent electrode layer and a first metal electrode layer corresponding to the first conductive type semiconductor layer, and a second transparent electrode layer and a second metal electrode layer corresponding to the second conductive type semiconductor layer, wherein the first transparent electrode layer and the first metal electrode layer are in a band shape, the band width of the first transparent electrode layer is narrower than the band width of the first metal electrode layer, the band width of the second transparent electrode layer and the band width of the second metal electrode layer are in a band shape, the band width of the second transparent electrode layer is narrower than the band width of the second metal electrode layer, and a resin film in which a resin material in a printing material of the first metal electrode layer and the second metal electrode layer is formed to be biased exists at the periphery of the first metal electrode layer and.
The solar cell module according to the present invention includes the above-described solar cell.
According to the present invention, the formation of the transparent electrode layer of the solar cell can be simplified.
Drawings
Fig. 1 is a side view showing an example of a solar cell module according to the present embodiment.
Fig. 2 is a view of the solar cell according to the present embodiment as viewed from the back side.
Fig. 3 is a sectional view of the solar cell of fig. 2 taken along line III-III.
Fig. 4A is a diagram illustrating a semiconductor layer forming step in the method for manufacturing a solar cell according to the present embodiment.
Fig. 4B is a diagram illustrating a transparent conductive film forming step in the method for manufacturing a solar cell according to the present embodiment.
Fig. 4C is a diagram illustrating a metal electrode layer forming step in the method for manufacturing a solar cell according to the present embodiment.
Fig. 4D is a diagram illustrating a transparent electrode layer forming step in the method for manufacturing a solar cell according to the present embodiment.
Fig. 5A shows the results of observing the metal electrode layer and the metal electrode interlayer on the back surface side of the solar cell of the example at a magnification of 100 times using an SEM.
Fig. 5B is a result of observing a portion a between the metal electrode layers in fig. 5A at a magnification of 450 times using an SEM.
Fig. 5C is a result of observing a portion B between the metal electrode layers in fig. 5B at a magnification of 5000 times using an SEM.
Detailed Description
Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals. For convenience, hatching, component reference numerals, and the like may be omitted, and in the above case, reference is made to other drawings.
(solar cell Module)
Fig. 1 is a side view showing an example of a solar cell module according to the present embodiment. The solar cell module 100 includes a plurality of solar cells 1 arranged in a two-dimensional shape.
The solar battery cells 1 are connected in series and/or in parallel by the wiring member 2. Specifically, the wiring member 2 is connected to a bus bar portion (described later) in the electrode layer of the solar cell 1. The wiring member 2 is a known interconnector such as a tab.
The solar cell 1 and the wiring member 2 are sandwiched between the light-receiving-surface protection member 3 and the back-surface protection member 4. The solar cell 1 and the wiring member 2 are sealed by filling a liquid or solid sealing material 5 between the light-receiving-surface protection member 3 and the back-surface protection member 4. The light-receiving-surface protection member 3 is, for example, a glass substrate, and the back-surface protection member 4 is a glass substrate or a metal plate. The sealing material 5 is, for example, a transparent resin.
Hereinafter, the solar cell (hereinafter, referred to as a solar cell) 1 will be described in detail.
(solar cell)
Fig. 2 is a view of the solar cell according to the present embodiment as viewed from the back side. The solar cell 1 shown in fig. 2 is a back electrode type solar cell. The solar cell 1 includes a semiconductor substrate 11 having two main surfaces, and the semiconductor substrate 11 has a first conductive type region 7 and a second conductive type region 8 on the main surfaces.
The first conductivity type region 7 has a so-called comb-like shape, and includes a plurality of finger portions 7f corresponding to comb teeth and a bus portion 7b corresponding to a support portion of the comb teeth. The bus bar portion 7b extends in a first direction (X direction) along one side portion of the semiconductor substrate 11, and the finger portion 7f extends from the bus bar portion 7b in a second direction (Y direction) intersecting the first direction.
Similarly, the second conductivity type region 8 has a so-called comb-like shape, and includes a plurality of finger portions 8f corresponding to comb teeth and a bus portion 8b corresponding to a support portion of the comb teeth. The bus bar portion 8b extends in the first direction (X direction) along the other side portion of the semiconductor substrate 11 facing the one side portion, and the finger portion 8f extends from the bus bar portion 8b in the second direction (Y direction).
The finger portions 7f and the finger portions 8f are formed in a belt shape extending in the second direction (Y direction) and are alternately arranged in the first direction (X direction).
The first conductive type region 7 and the second conductive type region 8 may be formed in a stripe shape.
Fig. 3 is a sectional view of the solar cell of fig. 2 taken along line III-III. As shown in fig. 3, the solar cell 1 includes a passivation layer 13 laminated on a light receiving surface side, which is one of the main surfaces of the semiconductor substrate 11 that receives light. The solar cell 1 further includes a passivation layer 23, a first conductive type semiconductor layer 25, and a first electrode layer 27, which are sequentially stacked on a portion (mainly the first conductive type region 7) of the back surface side of the main surface (one main surface) on the opposite side of the light receiving surface out of the main surfaces of the semiconductor substrate 11. The solar cell 1 further includes a passivation layer 33, a second conductivity type semiconductor layer 35, and a second electrode layer 37, which are sequentially stacked on another portion (mainly the second conductivity type region 8) on the back surface side of the semiconductor substrate 11.
The semiconductor substrate 11 is made of a crystalline silicon material such as single crystal silicon or polycrystalline silicon. The semiconductor substrate 11 is, for example, an n-type semiconductor substrate in which a crystalline silicon material is doped with an n-type dopant. The semiconductor substrate 11 may be a p-type semiconductor substrate in which a p-type dopant is doped in a crystalline silicon material, for example. The n-type dopant includes, for example, phosphorus (P). The p-type dopant includes, for example, boron (B).
The semiconductor substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light-receiving surface side to generate photogenerated carriers (electrons and holes).
By using crystalline silicon as a material of the semiconductor substrate 11, a high output (stable output without being affected by illuminance) can be obtained even when the dark current is relatively small and the intensity of incident light is low.
The semiconductor substrate 11 may have a pyramid-shaped fine uneven structure called a texture structure on the back surface side. This improves the efficiency of collecting light that has passed without being absorbed by the semiconductor substrate 11.
The semiconductor substrate 11 may have a pyramid-shaped fine uneven structure called a textured structure on the light receiving surface side. This reduces reflection of incident light on the light receiving surface, thereby improving the light confinement effect of the semiconductor substrate 11.
The passivation layer 13 is formed on the light-receiving surface side of the semiconductor substrate 11. The passivation layer 23 is formed on the first conductivity type region 7 on the back surface side of the semiconductor substrate 11. The passivation layer 33 is formed on the second conductivity type region 8 on the back surface side of the semiconductor substrate 11. The passivation layers 13, 23, 33 are formed of, for example, an intrinsic (i-type) amorphous silicon material.
The passivation layers 13, 23, 33 suppress the re-coupling of carriers generated in the semiconductor substrate 11, thereby improving the carrier recovery efficiency.
An antireflection layer made of a material such as SiO, SiN, or SiON may be provided on the passivation layer 13 on the light-receiving surface side of the semiconductor substrate 11.
The first conductivity type semiconductor layer 25 is formed on the passivation layer 23, that is, the first conductivity type region 7 formed on the back surface side of the semiconductor substrate 11. The first conductive type semiconductor layer 25 is formed of, for example, an amorphous silicon material. The first conductive type semiconductor layer 25 is, for example, a p-type semiconductor layer in which a p-type dopant (e.g., boron (B) described above) is doped in an amorphous silicon material.
The second conductivity type semiconductor layer 35 is formed on the passivation layer 33, that is, the second conductivity type region 8 formed on the back surface side of the semiconductor substrate 11. The second conductive type semiconductor layer 35 is formed of, for example, an amorphous silicon material. The second conductive type semiconductor layer 35 is, for example, an n-type semiconductor layer in which an amorphous silicon material is doped with an n-type dopant (for example, the above-described phosphorus (P)).
The first conductive type semiconductor layer 25 may be an n-type semiconductor layer, and the second conductive type semiconductor layer 35 may be a p-type semiconductor layer.
The first conductive type semiconductor layer 25 and the passivation layer 23, and the second conductive type semiconductor layer 35 and the passivation layer 33 are formed in a stripe shape extending in the second direction (Y direction) and alternately arranged in the first direction (X direction).
The second conductive type semiconductor layer 35 and a part of the passivation layer 33 may overlap with a part of the adjacent first conductive type semiconductor layer 25 and the adjacent passivation layer 23 (not shown).
The first electrode layer 27 corresponds to the first conductive type semiconductor layer 25, and is specifically formed on the first conductive type semiconductor layer 25 in the first conductive type region 7 on the back surface side of the semiconductor substrate 11. The second electrode layer 37 corresponds to the second conductive type semiconductor layer 35, and is specifically formed on the second conductive type semiconductor layer 35 in the second conductive type region 8 on the back surface side of the semiconductor substrate 11.
The first electrode layer 27 includes a first transparent electrode layer 28 and a first metal electrode layer 29 which are sequentially stacked on the first conductive semiconductor layer 25. The second electrode layer 37 includes a second transparent electrode layer 38 and a second metal electrode layer 39 sequentially stacked on the second conductive semiconductor layer 35.
The first transparent electrode layer 28 and the second transparent electrode layer 38 are formed of a transparent conductive material. Examples of the transparent conductive material include ITO (Indium Tin Oxide: a composite Oxide of Indium Oxide and Tin Oxide).
The first metal electrode layer 29 and the second metal electrode layer 39 are formed of a conductive paste material containing a granular metal material such as silver, copper, or aluminum, an insulating resin material, and a solvent.
The first electrode layer 27 and the second electrode layer 37, that is, the first transparent electrode layer 28, the second transparent electrode layer 38, the first metal electrode layer 29, and the second metal electrode layer 39 are formed in a stripe shape extending in the second direction (Y direction), and are alternately arranged in the first direction (X direction).
The first transparent electrode layer 28 and the second transparent electrode layer 38 are separated from each other, and the first metal electrode layer 29 and the second metal electrode layer 39 are also separated from each other.
The first transparent electrode layer 28 has a narrower bandwidth in the first direction (X direction) than the first metal electrode layer 29, and the second transparent electrode layer 38 has a narrower bandwidth in the first direction (X direction) than the second metal electrode layer 39.
A resin film 40 is formed on the periphery of the first metal electrode layer 29 and the periphery of the second metal electrode layer 39, and the resin film 40 is formed by the insulating resin material in the conductive paste material of the first metal electrode layer 29 and the second metal electrode layer 39 being biased (described later in detail).
A part of the first conductive type semiconductor layer 25 and a part of the second conductive type semiconductor layer 35 between the first metal electrode layer 29 and the second metal electrode layer 39 are covered with the resin film 40. Specifically, the resin film 40 covers the valley portions of the uneven structure (textured structure) of the first conductive type semiconductor layer 25 and the valley portions of the uneven structure of the second conductive type semiconductor layer 35 between the first metal electrode layer 29 and the second metal electrode layer 39.
On the other hand, the top of the uneven structure of the first conductive type semiconductor layer 25 and the top of the uneven structure of the second conductive type semiconductor layer 35 between the first metal electrode layer 29 and the second metal electrode layer 39 are exposed without being covered with the resin film 40.
A transparent conductive film 48 made of the same material as the first transparent electrode layer 28 and the second transparent electrode layer 38 is disposed in an island shape (discontinuously) between the first conductive type semiconductor layer 25 and the resin film 40 and between the second conductive type semiconductor layer 35 and the resin film 40. Specifically, the transparent conductive film 48 is disposed in an island shape between the valley portions of the uneven structure of the first conductive type semiconductor layer 25 and the resin film 40 and between the valley portions of the uneven structure of the second conductive type semiconductor layer 35 and the resin film 40.
The contact area between the first metal electrode layer 29 and the first conductive type semiconductor layer 25 is less than half of the contact area between the first transparent electrode layer 28 and the first conductive type semiconductor layer 25, and the contact area between the second metal electrode layer 39 and the second conductive type semiconductor layer 35 is less than half of the contact area between the second transparent electrode layer 38 and the second conductive type semiconductor layer 35.
Next, a method for manufacturing a solar cell according to the present embodiment will be described with reference to fig. 4A to 4D. Fig. 4A is a diagram illustrating a semiconductor layer forming step in the method for manufacturing a solar cell according to the present embodiment, and fig. 4B is a diagram illustrating a transparent conductive film forming step in the method for manufacturing a solar cell according to the present embodiment. Fig. 4C is a diagram illustrating a metal electrode layer forming step in the method for manufacturing a solar cell according to the present embodiment, and fig. 4D is a diagram illustrating a transparent electrode layer forming step in the method for manufacturing a solar cell according to the present embodiment. Fig. 4A to 4D show the back surface side of the semiconductor substrate 11, and omit the front surface side of the semiconductor substrate 11.
First, as shown in fig. 4A, the passivation layer 23 and the first conductive type semiconductor layer 25 are formed on a part of the back surface side of the semiconductor substrate 11 having the uneven structure (textured structure) at least on the back surface side, specifically, on the first conductive type region 7 (semiconductor layer forming step).
For example, after a passivation film and a first conductive type semiconductor film are formed on the entire back surface side of the semiconductor substrate 11 by a CVD method or a PVD method, the passivation layer 23 and the first conductive type semiconductor layer 25 may be patterned by an etching method using a mask formed by a photolithography technique or a metal mask. Further, as an etching solution for the p-type semiconductor film, for example, an acidic solution such as hydrofluoric acid containing ozone, and a mixed solution of nitric acid and hydrofluoric acid, and as an etching solution for the n-type semiconductor film, for example, an alkaline solution such as a potassium hydroxide aqueous solution can be cited.
Alternatively, when the passivation layer and the first conductivity type semiconductor layer are stacked on the back surface side of the semiconductor substrate 11 by the CVD method or the PVD method, the passivation layer 23 and the p-type semiconductor layer 25 may be formed and patterned at the same time by using a mask.
Next, the passivation layer 33 and the second conductive type semiconductor layer 35 are formed on the other portion of the back surface side of the semiconductor substrate 11, specifically, the second conductive type region 8 (semiconductor layer forming step).
For example, similarly to the above, after a passivation film and a second conductive type semiconductor film are formed on the entire back surface side of the semiconductor substrate 11 by using a CVD method or a PVD method, the passivation layer 33 and the second conductive type semiconductor layer 35 may be patterned by using an etching method using a mask formed by a photolithography technique or a metal mask.
Alternatively, when the passivation layer and the second conductive type semiconductor layer are stacked on the back surface side of the semiconductor substrate 11 by using the CVD method or the PVD method, the passivation layer 33 and the second conductive type semiconductor layer 35 may be formed and patterned at the same time by using a mask.
In the semiconductor layer forming step, the passivation layer 13 may be formed on the entire light receiving surface side of the semiconductor substrate 11 (not shown).
Next, as shown in fig. 4B, a transparent conductive film 28Z is formed on the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35 so as to straddle them (transparent conductive film forming step). As a method for forming the transparent conductive film 28Z, for example, a CVD method, a PVD method, or the like is used.
Next, as shown in fig. 4C, a first metal electrode layer 29 is formed on the first conductive type semiconductor layer 25 through the transparent conductive film 28Z, and a second metal electrode layer 39 is formed on the second conductive type semiconductor layer 35 through the transparent conductive film 28Z (metal electrode layer forming step).
The first metal electrode layer 29 and the second metal electrode layer 39 are formed by printing a printing material (e.g., ink). Examples of the method for forming the first metal electrode layer 29 and the second metal electrode layer 39 include a screen printing method, an ink-jet method, a gravure coating method, a dispensing method, and the like. Among them, the screen printing method is preferable.
The printing material contains a granular (e.g., spherical) metal material in an insulating resin material. The printing material may contain a solvent or the like for adjusting the viscosity or coatability.
As the insulating resin material, a matrix resin or the like can be mentioned. More specifically, the insulating resin is preferably a polymer compound, particularly preferably a thermosetting resin or an ultraviolet curable resin, and typically an epoxy, polyurethane, polyester, or silicone resin.
Examples of the metal material include silver, copper, and aluminum. Among them, silver paste containing silver particles is preferable.
For example, the ratio of the metal material contained in the printed material is 85% to 95% by weight of the entire printed material.
Next, after the first metal electrode layer 29 and the second metal electrode layer 39 are printed, the insulating resin in the first metal electrode layer 29 and the second metal electrode layer 39 is cured by heat treatment or ultraviolet irradiation treatment. At this time, the insulating resin material seeps out to the peripheral edges of the first metal electrode layer 29 and the second metal electrode layer 39, and the resin film 40 in which the insulating resin material is unevenly distributed is formed on the peripheral edges of the first metal electrode layer 29 and the second metal electrode layer 39.
At this time, the valley portions of the uneven structure (textured structure) of the transparent conductive film 28Z between the first metal electrode layer 29 and the second metal electrode layer 39 are covered with the resin film 40. On the other hand, the top of the uneven structure of the transparent conductive film 28Z between the first metal electrode layer 29 and the second metal electrode layer 39 is exposed without being covered with the resin film 40.
The first metal electrode layer 29 and the second metal electrode layer 39 formed from the conductive paste may have urethane bonds. For example, polyurethane resins have less shrinkage during crosslinking than epoxy resins, and are less likely to cause cracks in the resins. If cracks are not easily generated in the resin, the etching solution can be prevented from penetrating into the metal electrode layer, and the metal electrode layer can be prevented from being peeled off and the long-term reliability from being deteriorated due to the etching of the transparent conductive film under the metal electrode layer.
Next, as shown in fig. 4D, the transparent conductive film 28Z is patterned by an etching method using the first metal electrode layer 29 and the resin film 40 around the first metal electrode layer as well as the second metal electrode layer 39 and the resin film 40 around the second metal electrode layer as masks, thereby forming the first transparent electrode layer 28 and the second transparent electrode layer 38 which are separated from each other (transparent electrode layer forming step). Examples of the etching method include a wet etching method, and examples of the etching solution include an acidic solution such as hydrochloric acid (HCl).
At this time, between the first metal electrode layer 29 and the second metal electrode layer 39, the transparent conductive film 28Z is etched from the top portion of the uneven structure (textured structure) toward the valley portion.
Here, in order to separate the first transparent electrode layer 28 and the second transparent electrode layer 38, the transparent conductive film 48 may be in an island shape and may be left in a valley portion of the uneven structure as long as the transparent conductive film between them is discontinuous. When the transparent conductive film 48 remains in the island-like shape in the valley portion of the uneven structure, the resin film 40 in the valley portion of the uneven structure remains on the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35.
Through the above steps, the back electrode type solar cell 1 of the present embodiment is completed.
Here, the conventional method for manufacturing a solar cell includes a transparent electrode layer forming step after the transparent conductive layer forming step and before the metal electrode layer forming step.
In the transparent electrode layer forming step, the transparent conductive film is patterned by, for example, photolithography, thereby forming a first transparent electrode layer and a second transparent electrode layer separated from each other. In the case of the photolithographic method, the etching process,
coating a resist on the transparent conductive film,
forming an opening in the resist by exposing the resist to light,
forming a first transparent electrode layer and a second transparent electrode layer separated from each other by etching the transparent conductive film exposed in the opening using the resist as a mask,
the resist is removed.
In contrast, according to the method for manufacturing a solar cell of the present embodiment, the metal electrode layer forming step and the transparent electrode layer forming step are sequentially included after the transparent conductive film forming step, and in the transparent electrode layer forming step, the first transparent electrode layer 28 and the second transparent electrode layer 38 separated from each other are formed by patterning the transparent conductive film 28Z using the first metal electrode layer 29 and the second metal electrode layer 39 formed in the metal electrode layer forming step as masks. Thus, according to the method for manufacturing a solar cell of the present embodiment, it is possible to simplify and shorten the formation of the transparent electrode layer without using photolithography using a mask or the like as in the related art. As a result, the cost of the solar cell and the solar cell module can be reduced.
Here, when the transparent conductive film 28Z is patterned using the first metal electrode layer 29 and the second metal electrode layer 39 as masks, the transparent conductive film 28Z under the first metal electrode layer 29 and the second metal electrode layer 39 is also etched at the time of etching the transparent conductive film 28Z, and there is a possibility that the first transparent electrode layer 28 and the first metal electrode layer 29 are separated from the second transparent electrode layer 38 and the second metal electrode layer 39.
In this regard, according to the method of manufacturing a solar cell of the present embodiment, in the metal electrode layer forming step, the printing material including the granular metal material, the resin material, and the solvent is printed and cured, so that the resin film 40 in which the resin material is present in a biased manner is formed on the peripheral edge of the first metal electrode layer 29 and the peripheral edge of the second metal electrode layer 39, and in the transparent electrode layer forming step, the transparent conductive film 28Z is pattern-molded using the resin film 40 on the first metal electrode layer 29 and the peripheral edge thereof, and the resin film 40 on the second metal electrode layer 39 and the peripheral edge thereof as masks. This can suppress etching of the transparent conductive film 28Z under the first and second metal electrode layers 29 and 39, and can suppress peeling of the first and second transparent electrode layers 28 and 29 and peeling of the second and second metal electrode layers 38 and 39.
In the solar cell 1 manufactured by such a manufacturing method, the first transparent electrode layer 28 has a narrower bandwidth than the first metal electrode layer 29, the second transparent electrode layer 38 has a narrower bandwidth than the second metal electrode layer 39, and the resin film in which the resin material in the printing material of the first metal electrode layer 29 and the second metal electrode layer 39 is unevenly distributed is formed on the peripheral edge of the first metal electrode layer 29 and the peripheral edge of the second metal electrode layer 39.
In addition, in a solar cell manufactured by a conventional solar cell manufacturing method, the bandwidth of the transparent electrode layer is generally wider than the bandwidth of the metal electrode layer.
In the solar cell 1 manufactured by the manufacturing method of the present embodiment, a part of the first conductive type semiconductor layer 25 and a part of the second conductive type semiconductor layer 35 between the first metal electrode layer 29 and the second metal electrode layer 39 are covered with the resin film 40. Specifically, the resin film 40 covers the valley portions of the uneven structure (textured structure) of the first conductive type semiconductor layer 25 and the valley portions of the uneven structure of the second conductive type semiconductor layer 35 between the first metal electrode layer 29 and the second metal electrode layer 39.
Further, a transparent conductive film 48 made of the same material as the first transparent electrode layer 28 and the second transparent electrode layer 38 is disposed in an island shape (discontinuously) between the first conductive type semiconductor layer 25 and the resin film 40 and between the second conductive type semiconductor layer 35 and the resin film 40. Specifically, the transparent conductive film 48 is disposed in an island shape between the valley portions of the uneven structure of the first conductive type semiconductor layer 25 and the resin film 40 and between the valley portions of the uneven structure of the second conductive type semiconductor layer 35 and the resin film 40.
This reduces the exposed area of the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35. Therefore, deterioration of the solar cell and the solar cell module can be suppressed, and reliability (for example, long-term durability) of the solar cell and the solar cell module can be improved.
While the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various changes and modifications can be made. For example, in the above-described embodiment, the solar cell 1 of the heterojunction type is exemplified as shown in fig. 3, but the present invention is not limited to the solar cell of the heterojunction type, and can be applied to various solar cells such as a solar cell of the homojunction type.
In the above embodiment, the solar cell having the crystalline silicon substrate is exemplified, but the present invention is not limited thereto. For example, the solar cell may also have a gallium arsenide (GaAs) substrate.
Examples
The present invention will be specifically described below with reference to examples, but the present invention is not limited to the following examples.
The solar cell 1 shown in fig. 2 and 3 was produced by the steps shown in fig. 4A to 4D as follows.
First, anisotropic etching is performed on the back surface side of the single crystal silicon substrate, thereby obtaining a semiconductor substrate 11 having a pyramidal texture structure formed on the back surface side.
Next, after a passivation film and a first conductive type semiconductor film are formed on the entire back surface side of the semiconductor substrate 11 by a CVD method, a passivation layer 23 and a first conductive type semiconductor layer 25 are formed on a part of the back surface side of the semiconductor substrate 11 by an etching method using a photoresist (mask) formed by a photolithography technique (semiconductor layer forming step).
Next, after a passivation film and a second conductive type semiconductor film are formed on the entire back surface side of the semiconductor substrate 11 by a CVD method, the passivation layer 33 and the second conductive type semiconductor layer 35 are formed on the other portion of the back surface side of the semiconductor substrate 11 by an etching method using a photoresist (mask) formed by a photolithography technique (semiconductor layer forming step).
Next, a transparent conductive film 28Z is formed on the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 35 so as to straddle them by using a CVD method (transparent conductive film forming step).
Next, using a screen printing method using a silver paste, the first metal electrode layer 29 is formed on the first conductive type semiconductor layer 25 via the transparent conductive film 28Z, and the second metal electrode layer 39 is formed on the second conductive type semiconductor layer 35 via the transparent conductive film 28Z (metal electrode layer forming step).
Then, the first metal electrode layer 29 and the second metal electrode layer 39 were heat-treated in an oven at 180 ℃ for 1 hour. As a result, the insulating resin material in the printing material seeps out to the peripheral edge of the first metal electrode layer 29 and the peripheral edge of the second metal electrode layer 39, and the resin film 40 is formed on the peripheral edge of the first metal electrode layer 29 and the peripheral edge of the second metal electrode layer 39.
Next, the transparent conductive film 28Z is patterned by an etching method using the first metal electrode layer 29 and the resin film 40 around the first metal electrode layer, the second metal electrode layer 39 and the resin film 40 around the second metal electrode layer as masks, thereby forming the first transparent electrode layer 28 and the second transparent electrode layer 38 which are separated from each other (transparent electrode layer forming step). As the etching solution, hydrochloric acid (HCl) was used.
In the process of manufacturing the solar cell of the example as described above, the back surface side of the solar cell after the transparent conductive film forming step and the metal electrode layer forming step and before the transparent electrode layer forming step was observed using an SEM (field emission type scanning electron microscope S4800, manufactured by hitachi high and new technologies). The results are shown in FIGS. 5A to 5C.
Fig. 5A is a result of observing the metal electrode layer and the metal electrode interlayer on the back surface side of the solar cell of the example at a magnification of 100 times using an SEM, and fig. 5B is a result of observing the portion a between the metal electrode layers in fig. 5A at a magnification of 450 times using an SEM. Fig. 5C is a result of observing a portion B between the metal electrode layers in fig. 5B at a magnification of 5000 times using an SEM.
From fig. 5A to 5C, it can be confirmed that the resin film 40 (black portion) in which the insulating resin material is unevenly distributed is formed on the peripheral edge of the first metal electrode layer 29 and the peripheral edge of the second metal electrode layer 39.
It was confirmed that the valley portions of the uneven structure (textured structure) of the transparent conductive film 28Z between the first metal electrode layer 29 and the second metal electrode layer 39 were covered with the resin film 40 (black portion). On the other hand, it can be confirmed that the top of the uneven structure of the transparent conductive film 28Z between the first metal electrode layer 29 and the second metal electrode layer 39 is exposed without being covered with the resin film 40. Accordingly, it is expected that the transparent conductive film 28Z is etched from the top to the bottom of the uneven structure in the subsequent etching in the transparent electrode layer forming step.
Next, after the transparent electrode layer forming step, the back surface side of the solar cell of the fabricated example was observed by SEM, and it was confirmed that the first transparent electrode layer 28 and the first metal electrode layer 29, and the second transparent electrode layer 38 and the second metal electrode layer 39 were not peeled off. It was confirmed that the resin film 40 was not peeled off and remained in the valley portion of the uneven structure between the first metal electrode layer 29 and the second metal electrode layer 39.
Further, the short circuit between the electrodes was checked, and it was confirmed that there was no short circuit between the electrode layers.
Since the resin film 40 is not peeled off and there is no short circuit between the electrode layers, it is expected that the transparent conductive film 48 remains in an island shape between the valley portions of the uneven structure of the first conductive type semiconductor layer 25 and the layer of the resin film 40 and between the valley portions of the uneven structure of the second conductive type semiconductor layer 35 and the layer of the resin film 40, and holds the resin film 40.
Description of the reference numerals
1 … solar cell; 2 … wiring parts; 3 … light receiving surface protection member; 4 … back protection components; 5 … sealing material; 7 … a first conductivity type region; 8 … second conductivity type region; 7b, 8b … bus portions; 7f, 8f … fingers; 11 … a semiconductor substrate; 13. 23, 33 … passivation layer; 25 … a first conductive semiconductor layer; 27 … a first electrode layer; 28 … a first transparent electrode layer; 28Z … transparent conductive film; 29 … a first metal electrode layer; 35 … a second conductive semiconductor layer; 37 … second electrode layer; 38 … a second transparent electrode layer; 39 … a second metal electrode layer; 40 … resin film; 48 … transparent conductive film; 100 … solar cell module.
Claims (15)
1. A method for manufacturing a back electrode type solar cell, the method comprising: a semiconductor substrate having two main surfaces, a first conductive type semiconductor layer and a second conductive type semiconductor layer disposed on one main surface side of the semiconductor substrate, a first transparent electrode layer and a first metal electrode layer corresponding to the first conductive type semiconductor layer, and a second transparent electrode layer and a second metal electrode layer corresponding to the second conductive type semiconductor layer,
the method for manufacturing a solar cell is characterized by comprising the following steps in sequence:
a semiconductor layer forming step of forming the first conductivity type semiconductor layer on a part of the one main surface side of the semiconductor substrate and forming the second conductivity type semiconductor layer on the other part of the one main surface side of the semiconductor substrate;
a transparent conductive film forming step of forming a transparent conductive film on the first conductive type semiconductor layer and the second conductive type semiconductor layer so as to straddle them;
a metal electrode layer forming step of forming the first metal electrode layer on the first conductivity type semiconductor layer with the transparent conductive film interposed therebetween, and forming the second metal electrode layer on the second conductivity type semiconductor layer with the transparent conductive film interposed therebetween; and
a transparent electrode layer forming step of forming the first transparent electrode layer and the second transparent electrode layer separated from each other by patterning the transparent conductive film,
in the metal electrode layer forming step, a printing material including a granular metal material, a resin material, and a solvent is printed and cured to form the first metal electrode layer and the second metal electrode layer, a resin film in which the resin material is present in a biased manner is formed on a peripheral edge of the first metal electrode layer and a peripheral edge of the second metal electrode layer,
in the transparent electrode layer forming step, the transparent conductive film is pattern-formed using the resin film around the first metal electrode layer and the second metal electrode layer as well as the resin film around the second metal electrode layer as a mask.
2. The method for manufacturing a solar cell according to claim 1,
in the transparent electrode layer forming step, the transparent conductive film is patterned by a wet etching method using an etching solution.
3. The method for manufacturing a solar cell according to claim 1 or 2,
in the metal electrode layer forming step, the printing material is printed by a screen printing method.
4. The method for manufacturing a solar cell according to any one of claims 1 to 3,
the ratio of the metal material contained in the printing material is 85% to 95% by weight of the entire printing material.
5. A solar cell of a back electrode type, comprising: a semiconductor substrate having two main surfaces, a first conductive type semiconductor layer and a second conductive type semiconductor layer disposed on one main surface side of the semiconductor substrate, a first transparent electrode layer and a first metal electrode layer corresponding to the first conductive type semiconductor layer, and a second transparent electrode layer and a second metal electrode layer corresponding to the second conductive type semiconductor layer,
the solar cell is characterized in that it is,
the first transparent electrode layer and the first metal electrode layer are in a band shape, the band width of the first transparent electrode layer is narrower than the band width of the first metal electrode layer,
the second transparent electrode layer and the second metal electrode layer are in a strip shape, the strip width of the second transparent electrode layer is narrower than that of the second metal electrode layer,
a resin film in which a resin material in a printing material of the first metal electrode layer and the second metal electrode layer is present in a biased manner is formed on a peripheral edge of the first metal electrode layer and a peripheral edge of the second metal electrode layer.
6. The solar cell according to claim 5,
a portion of the first conductive type semiconductor layer and a portion of the second conductive type semiconductor layer between the first metal electrode layer and the second metal electrode layer are covered with the resin film.
7. The solar cell of claim 6,
a transparent conductive film made of the same material as the first transparent electrode layer and the second transparent electrode layer is disposed in an island shape between the first conductive type semiconductor layer and the resin film and between the second conductive type semiconductor layer and the resin film.
8. The solar cell according to claim 6 or 7,
at least one of the two main surfaces of the semiconductor substrate has a concave-convex structure,
wherein valley portions of the first conductivity type semiconductor layer and valley portions of the second conductivity type semiconductor layer between the first metal electrode layer and the second metal electrode layer are covered with the resin film,
a top portion of the first conductive type semiconductor layer and a top portion of the second conductive type semiconductor layer between the first metal electrode layer and the second metal electrode layer are not covered with the resin film and are exposed.
9. The solar cell of claim 8,
a transparent conductive film made of the same material as the first transparent electrode layer and the second transparent electrode layer is disposed in an island shape between the valley portion of the first conductivity type semiconductor layer and the resin film and between the valley portion of the second conductivity type semiconductor layer and the resin film.
10. The solar cell according to any one of claims 5 to 9,
the printing material is a metal paste,
the resin film is formed by bleeding out a resin material contained in the printing material.
11. The solar cell of claim 10,
the first metal electrode layer and the second metal electrode layer include silver as a metal material contained in the printing material.
12. The solar cell according to claim 10 or 11,
the first metal electrode layer and the second metal electrode layer include a granular metal material contained in the printing material.
13. The solar cell according to any one of claims 10 to 12,
the first metal electrode layer and the second metal electrode layer formed of the printed material have urethane bonds.
14. The solar cell according to any one of claims 5 to 13,
a contact area between the first metal electrode layer and the first conductive type semiconductor layer is less than or equal to half of a contact area between the first transparent electrode layer and the first conductive type semiconductor layer,
the contact area between the second metal electrode layer and the second conductive type semiconductor layer is less than or equal to half of the contact area between the second transparent electrode layer and the second conductive type semiconductor layer.
15. A solar cell module is characterized in that,
a solar cell according to any one of claims 5 to 14.
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| PCT/JP2019/040249 WO2020090423A1 (en) | 2018-10-31 | 2019-10-11 | Solar cell manufacturing method, solar cell, and solar cell module |
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| WO2021201030A1 (en) * | 2020-03-30 | 2021-10-07 | 株式会社カネカ | Solar cell and solar cell manufacturing method |
| CN116741850A (en) * | 2022-06-08 | 2023-09-12 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
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| JP2013239476A (en) * | 2012-05-11 | 2013-11-28 | Mitsubishi Electric Corp | Photovoltaic device and method of manufacturing the same, and photovoltaic module |
| CN104854708A (en) * | 2013-05-17 | 2015-08-19 | 株式会社钟化 | Solar cell, production method therefor, and solar cell module |
| CN107112378A (en) * | 2015-01-07 | 2017-08-29 | 株式会社钟化 | Solar cell and its manufacture method and solar module |
| CN107408588A (en) * | 2015-03-30 | 2017-11-28 | 松下知识产权经营株式会社 | The manufacture method of solar battery cell and solar battery cell |
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| JP5891375B2 (en) * | 2011-07-29 | 2016-03-23 | パナソニックＩｐマネジメント株式会社 | Photovoltaic module |
| JP5820265B2 (en) | 2011-12-21 | 2015-11-24 | シャープ株式会社 | Back electrode type solar cell and manufacturing method thereof |
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| JP2013239476A (en) * | 2012-05-11 | 2013-11-28 | Mitsubishi Electric Corp | Photovoltaic device and method of manufacturing the same, and photovoltaic module |
| CN104854708A (en) * | 2013-05-17 | 2015-08-19 | 株式会社钟化 | Solar cell, production method therefor, and solar cell module |
| CN107112378A (en) * | 2015-01-07 | 2017-08-29 | 株式会社钟化 | Solar cell and its manufacture method and solar module |
| CN107408588A (en) * | 2015-03-30 | 2017-11-28 | 松下知识产权经营株式会社 | The manufacture method of solar battery cell and solar battery cell |
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| WO2020090423A1 (en) | 2020-05-07 |
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