TW202027290A - Solar cell manufacturing method, solar cell, and solar cell module - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 197
- 229910052751 metal Inorganic materials 0.000 claims abstract description 191
- 239000002184 metal Substances 0.000 claims abstract description 191
- 239000011347 resin Substances 0.000 claims abstract description 84
- 229920005989 resin Polymers 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 48
- 238000007639 printing Methods 0.000 claims abstract description 25
- 239000007769 metal material Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 description 36
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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Abstract
Description
本發明係關於一種背面電極型(背接觸型)太陽電池之製造方法、背面電極型太陽電池、及具備該太陽電池之太陽電池模組。The present invention relates to a method for manufacturing a back electrode type (back contact type) solar cell, a back electrode type solar cell, and a solar cell module provided with the solar cell.
作為使用半導體基板之太陽電池,存在於受光面側及背面側之兩面形成有電極之雙面電極型太陽電池、及僅於背面側形成有電極之背面電極型太陽電池。雙面電極型太陽電池係於受光面側形成電極,故由該電極將太陽光遮蔽。另一方面,背面電極型太陽電池係於受光面側未形成電極,故與雙面電極型太陽電池相比,太陽光之受光率更高。專利文獻1中揭示有一種背面電極型太陽電池。As solar cells using semiconductor substrates, there are double-sided electrode type solar cells in which electrodes are formed on both the light-receiving side and the back side, and back electrode type solar cells in which electrodes are formed only on the back side. In the double-sided electrode type solar cell, an electrode is formed on the light-receiving surface side, so sunlight is shielded by the electrode. On the other hand, the back electrode type solar cell has no electrode formed on the light-receiving surface side, so it has a higher solar light-receiving rate than the double-sided electrode type solar cell.
專利文獻1中記載之太陽電池具備:半導體基板、依序積層於半導體基板之背面側之第1導電型半導體層及第1電極層、以及依序積層於半導體基板之背面側之另一部分之第2導電型半導體層及第2電極層。第1電極層與第2電極層相互分離以防止短路。
[先前技術文獻]
[專利文獻]The solar cell described in
[專利文獻1]日本專利特開2013-131586號公報[Patent Document 1] Japanese Patent Laid-Open No. 2013-131586
[發明所欲解決之問題][The problem to be solved by the invention]
一般而言,第1電極層及第2電極層各自包含透明電極層與金屬電極層。金屬電極層係例如藉由使用銀膠之網版印刷法便可相對容易地分離形成。另一方面,透明電極層必須藉由使用遮罩之例如光微影法而分離地形成,從而其形成步驟相對複雜。Generally, each of the first electrode layer and the second electrode layer includes a transparent electrode layer and a metal electrode layer. The metal electrode layer can be separated and formed relatively easily by, for example, a screen printing method using silver glue. On the other hand, the transparent electrode layer must be separately formed by using a mask, such as a photolithography method, so that its forming step is relatively complicated.
本發明之目的在於提供一種能夠簡化透明電極層之形成之太陽電池之製造方法、太陽電池、及太陽電池模組。 [解決問題之技術手段]The purpose of the present invention is to provide a solar cell manufacturing method, solar cell, and solar cell module that can simplify the formation of a transparent electrode layer. [Technical means to solve the problem]
本發明之太陽電池之製造方法係背面電極型之太陽電池之製造方法,該背面電極型太陽電池具備:具有2個主面之半導體基板、配置於半導體基板之一主面側之第1導電型半導體層及第2導電型半導體層、與第1導電型半導體層對應之第1透明電極層及第1金屬電極層、以及與第2導電型半導體層對應之第2透明電極層及第2金屬電極層,該太陽電池之製造方法依序包含:半導體層形成步驟,其係於半導體基板之一主面側之一部分形成第1導電型半導體層,於半導體基板之一主面側之另一部分形成第2導電型半導體層;透明導電膜形成步驟,其係於第1導電型半導體層及第2導電型半導體層之上跨及該等地形成透明導電膜;金屬電極層形成步驟,其係介隔透明導電膜於第1導電型半導體層之上形成第1金屬電極層,並介隔透明導電膜於第2導電型半導體層之上形成第2金屬電極層;及透明電極層形成步驟,其係藉由將透明導電膜圖案化而形成相互分離之第1透明電極層及第2透明電極層;於金屬電極層形成步驟中,藉由印刷包含粒子狀之金屬材料、樹脂材料及溶劑之印刷材料且使其硬化,而形成第1金屬電極層及第2金屬電極層,且於第1金屬電極層之周緣及第2金屬電極層之周緣形成偏集存在有樹脂材料之樹脂膜,於透明電極層形成步驟中,將第1金屬電極層及其周緣之樹脂膜、以及第2金屬電極層及其周緣之樹脂膜用作遮罩,將透明導電膜圖案化。The method of manufacturing a solar cell of the present invention is a method of manufacturing a back-electrode-type solar cell. The back-electrode-type solar cell is provided with a semiconductor substrate having two main surfaces, and a first conductivity type disposed on one main surface side of the semiconductor substrate Semiconductor layer and second conductivity type semiconductor layer, first transparent electrode layer and first metal electrode layer corresponding to the first conductivity type semiconductor layer, and second transparent electrode layer and second metal corresponding to the second conductivity type semiconductor layer An electrode layer. The method of manufacturing the solar cell sequentially includes: a semiconductor layer forming step of forming a first conductivity type semiconductor layer on one part of a main surface side of a semiconductor substrate, and forming a semiconductor layer on another part of a main surface side of the semiconductor substrate The second conductivity type semiconductor layer; the transparent conductive film formation step, which is formed across the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and the transparent conductive film; the metal electrode layer formation step, which is based on A first metal electrode layer is formed on the first conductive type semiconductor layer through a transparent conductive film, and a second metal electrode layer is formed on the second conductive type semiconductor layer through a transparent conductive film; and a transparent electrode layer forming step, which The first transparent electrode layer and the second transparent electrode layer separated from each other are formed by patterning the transparent conductive film; in the step of forming the metal electrode layer, by printing the metal material, resin material and solvent containing particles The material is hardened to form the first metal electrode layer and the second metal electrode layer, and a resin film with a resin material is formed on the periphery of the first metal electrode layer and the periphery of the second metal electrode layer, which is transparent In the electrode layer forming step, the first metal electrode layer and its peripheral resin film, and the second metal electrode layer and its peripheral resin film are used as masks to pattern the transparent conductive film.
本發明之太陽電池係背面電極型太陽電池,其具備:具有2個主面之半導體基板、配置於半導體基板之一主面側之第1導電型半導體層及第2導電型半導體層、與第1導電型半導體層對應之第1透明電極層及第1金屬電極層、以及與第2導電型半導體層對應之第2透明電極層及第2金屬電極層,第1透明電極層及第1金屬電極層呈現帶狀,且第1透明電極層之帶寬窄於第1金屬電極層之帶寬,第2透明電極層及第2金屬電極層呈現帶狀,且第2透明電極層之帶寬窄於第2金屬電極層之帶寬,於第1金屬電極層之周緣及第2金屬電極層之周緣,形成偏集存在有第1金屬電極層及第2金屬電極層之印刷材料中之樹脂材料之樹脂膜。The solar cell-based back electrode type solar cell of the present invention includes: a semiconductor substrate having two main surfaces, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer arranged on one main surface side of the semiconductor substrate, and a second The first transparent electrode layer and the first metal electrode layer corresponding to the 1 conductivity type semiconductor layer, the second transparent electrode layer and the second metal electrode layer corresponding to the second conductivity type semiconductor layer, the first transparent electrode layer and the first metal The electrode layer has a band shape, and the bandwidth of the first transparent electrode layer is narrower than that of the first metal electrode layer, the second transparent electrode layer and the second metal electrode layer have a band shape, and the bandwidth of the second transparent electrode layer is narrower than that of the first metal electrode layer. 2 The width of the metal electrode layer is formed on the periphery of the first metal electrode layer and the periphery of the second metal electrode layer to form a resin film of resin material concentrated in the printing material of the first metal electrode layer and the second metal electrode layer .
本發明之太陽電池模組具備上述太陽電池。 [發明之效果]The solar cell module of the present invention includes the above-mentioned solar cell. [Effects of Invention]
根據本發明,能夠簡化太陽電池之透明電極層之形成。According to the present invention, the formation of the transparent electrode layer of the solar cell can be simplified.
以下,參照隨添圖式,對本發明之實施形態之一例進行說明。再者,各圖式中對於相同或相符之部分標註相同之符號。又,為方便起見,亦存在省略影線或構件符號等之情形,但該情形時,設為參照其他圖式。Hereinafter, an example of the embodiment of the present invention will be described with reference to the accompanying drawings. Furthermore, in each drawing, the same or corresponding parts are marked with the same symbols. In addition, for convenience, hatching or component symbols may be omitted, but in this case, it is assumed that other drawings are referred to.
(太陽電池模組)
圖1係表示本實施形態之太陽電池模組之一例之側視圖。太陽電池模組100具備二維狀排列而成之複數個太陽電池單元1。(Solar battery module)
Fig. 1 is a side view showing an example of the solar cell module of this embodiment. The
太陽電池單元1藉由配線構件2而串聯及/或並聯連接。具體而言,配線構件2連接於太陽電池單元1之電極層中之柵線部(下述)。配線構件2係例如接頭等公知之互連器。The
太陽電池單元1及配線構件2由受光面保護構件3與背面保護構件4夾住。於受光面保護構件3與背面保護構件4之間,填充有液體狀或固體狀之密封材5,藉此,將太陽電池單元1及配線構件2密封。受光面保護構件3係例如玻璃基板,背面保護構件4係玻璃基板或金屬板。密封材5係例如透明樹脂。
以下,對太陽電池單元(以下,稱為太陽電池)1詳細地進行說明。The
(太陽電池)
圖2係自背面側觀察本實施形態之太陽電池所得之圖。圖2所示之太陽電池1係背面電極型太陽電池。太陽電池1具備包含2個主面之半導體基板11,且於半導體基板11之主面具有第1導電型區域7與第2導電型區域8。(Solar battery)
Fig. 2 is a view of the solar cell of this embodiment viewed from the back side. The
第1導電型區域7呈所謂梳狀之形狀,具有相當於梳齒之複數個細柵線部7f、及相當於梳齒支持部之柵線部7b。柵線部7b沿半導體基板11之一邊部於第1方向(X方向)延伸,細柵線部7f自柵線部7b於與第1方向交叉之第2方向(Y方向)延伸。
同樣地,第2導電型區域8係所謂梳狀之形狀,具有相當於梳齒之複數個細柵線部8f、及相當於梳齒支持部之柵線部8b。柵線部8b沿半導體基板11之與一邊部對向之另一邊部於第1方向(X方向)延伸,細柵線部8f自柵線部8b於第2方向(Y方向)延伸。
細柵線部7f與細柵線部8f呈現於第2方向(Y方向)延伸之帶狀,且於第1方向(X方向)交替設置。
再者,第1導電型區域7及第2導電型區域8亦可形成為條紋狀。The first
圖3係圖2之太陽電池中之III-III線剖視圖。如圖3所示,太陽電池1具備於半導體基板11之主面中受光之側之主面即受光面側積層而成之鈍化層13。又,太陽電池1具備於半導體基板11之主面中之受光面之相反側之主面(一主面)即背面側之一部分(主要為第1導電型區域7)依序積層而成之鈍化層23、第1導電型半導體層25、及第1電極層27。又,太陽電池1具備依序積層於半導體基板11之背面側之另一部分(主要為第2導電型區域8)之鈍化層33、第2導電型半導體層35、及第2電極層37。Fig. 3 is a cross-sectional view taken along the line III-III of the solar cell of Fig. 2; As shown in FIG. 3, the
半導體基板11係由單晶矽或多晶矽等結晶矽材料形成。半導體基板11係例如於結晶矽材料中摻雜有n型摻雜劑之n型半導體基板。再者,半導體基板11亦可為例如於結晶矽材料中摻雜有p型摻雜劑之p型半導體基板。作為n型摻雜劑,例如可列舉磷(P)。作為p型摻雜劑,例如可列舉硼(B)。
半導體基板11係作為吸收來自受光面側之入射光產生光載子(電子及電洞)之光電轉換基板發揮功能。
藉由使用結晶矽作為半導體基板11之材料,即便暗電流相對較小,且入射光之強度較低之情形,亦可獲得相對高輸出(不依賴照度之穩定之輸出)。The
半導體基板11亦可於背面側具有稱為紋理構造之稜錐形微細之凹凸構造。藉此,通過半導體基板11而未被吸收之光之回收效率提高。
又,半導體基板11亦可於受光面側具有稱為紋理構造之稜錐形微細之凹凸構造。藉此,於受光面入射光之反射降低,半導體基板11中之光封閉效果提昇。The
鈍化層13形成於半導體基板11之受光面側。鈍化層23形成於半導體基板11之背面側之第1導電型區域7。鈍化層33形成於半導體基板11之背面側之第2導電型區域8。鈍化層13、23、33例如由本徵(i型)非晶矽材料而形成。
鈍化層13、23、33抑制半導體基板11中產生之載子之再結合,提高載子之回收效率。The
於半導體基板11之受光面側之鈍化層13上,例如亦可設置由SiO、SiN、或SiON等材料形成之抗反射層。On the
第1導電型半導體層25形成於鈍化層23上、即半導體基板11之背面側之第1導電型區域7。第1導電型半導體層25例如由非晶矽材料形成。第1導電型半導體層25係例如於非晶矽材料中摻雜有p型摻雜劑(例如,上述硼(B))之p型半導體層。The first conductivity
第2導電型半導體層35形成於鈍化層33上、即半導體基板11之背面側之第2導電型區域8。第2導電型半導體層35例如由非晶矽材料形成。第2導電型半導體層35係例如於非晶矽材料中摻雜有n型摻雜劑(例如,上述磷(P))之n型半導體層。
再者,第1導電型半導體層25係n型半導體層,第2導電型半導體層35係p型半導體層。The second conductivity
第1導電型半導體層25及鈍化層23、與第2導電型半導體層35及鈍化層33呈第2方向(Y方向)上延伸之帶狀,且交替排列於第1方向(X方向)。
第2導電型半導體層35及鈍化層33之一部分亦可重疊於相鄰之第1導電型半導體層25及鈍化層23之一部分之上(省略圖示)。The first conductivity
第1電極層27對應於第1導電型半導體層25,具體而言形成於半導體基板11之背面側之第1導電型區域7中之第1導電型半導體層25之上。第2電極層37對應於第2導電型半導體層35,具體而言形成於半導體基板11之背面側之第2導電型區域8中之第2導電型半導體層35之上。
第1電極層27具有依序積層於第1導電型半導體層25上之第1透明電極層28與第1金屬電極層29。第2電極層37具有依序積層於第2導電型半導體層35上之第2透明電極層38與第2金屬電極層39。The
第1透明電極層28及第2透明電極層38係由透明之導電性材料形成。作為透明導電性材料,可列舉ITO(Indium Tin Oxide:氧化銦及氧化錫之複合氧化物)等。
第1金屬電極層29及第2金屬電極層39係由含有銀、銅、鋁等粒子狀之金屬材料、絕緣性樹脂材料及溶劑之導電性膠材料形成。The first
第1電極層27及第2電極層37、即第1透明電極層28、第2透明電極層38、第1金屬電極層29及第2金屬電極層39呈第2方向(Y方向)上延伸之帶狀,且交替排列於第1方向(X方向)。
第1透明電極層28與第2透明電極層38相互分離,第1金屬電極層29與第2金屬電極層39亦相互分離。
第1透明電極層28之第1方向(X方向)之帶寬窄於第1金屬電極層29之第1方向(X方向)之帶寬,第2透明電極層38之第1方向(X方向)之帶寬窄於第2金屬電極層39之第1方向(X方向)之帶寬。The
於第1金屬電極層29之周緣及第2金屬電極層39之周緣,形成偏集存在有第1金屬電極層29及第2金屬電極層39之導電性膠材料中之絕緣性樹脂材料之樹脂膜40(詳情以下敍述)。On the periphery of the first
第1金屬電極層29與第2金屬電極層39之間的第1導電型半導體層25之一部分及第2導電型半導體層35之一部分由樹脂膜40覆蓋。詳細而言,第1金屬電極層29與第2金屬電極層39之間的第1導電型半導體層25之凹凸構造(紋理構造)之谷部及第2導電型半導體層35之凹凸構造之谷部由樹脂膜40覆蓋。
另一方面,第1金屬電極層29與第2金屬電極層39之間的第1導電型半導體層25之凹凸構造之頂部及第2導電型半導體層35之凹凸構造之頂部未被樹脂膜40覆蓋而露出。A portion of the first conductivity
於第1導電型半導體層25與樹脂膜40之層間及第2導電型半導體層35與樹脂膜40之層間,島狀(非連續)地配置有與第1透明電極層28及第2透明電極層38為相同材料之透明導電膜48。詳細而言,第1導電型半導體層25之凹凸構造之谷部與樹脂膜40之層間及第2導電型半導體層35之凹凸構造之谷部與樹脂膜40之層間,島狀地配置有透明導電膜48。Between the first conductive
第1金屬電極層29與第1導電型半導體層25之接觸面積為第1透明電極層28與第1導電型半導體層25之接觸面積之一半以下,第2金屬電極層39與第2導電型半導體層35之接觸面積為第2透明電極層38與第2導電型半導體層35之接觸面積之一半以下。The contact area between the first
其次,參照圖4A~圖4D,對本實施形態之太陽電池之製造方法進行說明。圖4A係表示本實施形態之太陽電池之製造方法中之半導體層形成步驟之圖,圖4B係表示本實施形態之太陽電池之製造方法中之透明導電層形成步驟之圖。圖4C係表示本實施形態之太陽電池之製造方法中之金屬電極層形成步驟之圖,圖4D係表示本實施形態之太陽電池之製造方法中之透明電極層形成步驟之圖。圖4A~圖4D中,示出了半導體基板11之背面側而省略了半導體基板11之正面側。Next, referring to FIGS. 4A to 4D, the method of manufacturing the solar cell of this embodiment will be described. 4A is a diagram showing the semiconductor layer forming step in the solar cell manufacturing method of this embodiment, and FIG. 4B is a diagram showing the transparent conductive layer forming step in the solar cell manufacturing method of this embodiment. 4C is a diagram showing the metal electrode layer forming step in the solar cell manufacturing method of this embodiment, and FIG. 4D is a diagram showing the transparent electrode layer forming step in the solar cell manufacturing method of this embodiment. In FIGS. 4A to 4D, the back side of the
首先,如圖4A所示,於至少背面側具有凹凸構造(紋理構造)之半導體基板11之背面側之一部分,具體而言於第1導電型區域7,形成鈍化層23及第1導電型半導體層25(半導體層形成步驟)。
例如,使用CVD(chemical vapor deposition,化學氣相沈積)法或PVD(Physical Vapor Deposition,物理氣相沈積)法,於半導體基板11之整個背面側將鈍化膜及第1導電型半導體膜製膜之後,亦可使用利用採用光微影技術產生之遮罩或金屬遮罩之蝕刻法,將鈍化層23及第1導電型半導體層25圖案化。再者,作為對p型半導體膜之蝕刻溶液,例如可列舉含有臭氧之氫氟酸、或如硝酸與氫氟酸之混合液般之酸性溶液,作為對n型半導體膜之蝕刻溶液,例如可列舉如氫氧化鉀水溶液般之鹼性溶液。
或者,於使用CVD法或PVD法,於半導體基板11之背面側積層鈍化層及第1導電型半導體層時,亦可使用遮罩,同時進行鈍化層23及p型半導體層25之製膜及圖案化。First, as shown in FIG. 4A, on a part of the back side of the
繼而,於半導體基板11之背面側之另一部分,具體而言於第2導電型區域8,形成鈍化層33及第2導電型半導體層35(半導體層形成步驟)。
例如,與上述同樣地,使用CVD法或PVD法,於半導體基板11之整個背面側將鈍化膜及第2導電型半導體膜製膜之後,亦可使用利用採用光微影技術產生之遮罩或金屬遮罩之蝕刻法,將鈍化層33及第2導電型半導體層35圖案化。
或者,於使用CVD法或PVD法,於半導體基板11之背面側積層鈍化層及第2導電型半導體層時,亦可使用遮罩,同時進行鈍化層33及第2導電型半導體層35之製膜及圖案化。Then, on another part of the back side of the
再者,於該半導體層形成步驟中,亦可於半導體基板11之受光面側之整面形成鈍化層13(省略圖示)。Furthermore, in the semiconductor layer forming step, the passivation layer 13 (not shown) may be formed on the entire surface of the
繼而,如圖4B所示,於第1導電型半導體層25及第2導電型半導體層35上,跨及該等地形成透明導電膜28Z(透明導電膜形成步驟)。作為透明導電膜28Z之形成方法,例如可使用CVD法或PVD法等。Then, as shown in FIG. 4B, on the first conductivity
繼而,如圖4C所示,介隔透明導電膜28Z於第1導電型半導體層25上形成第1金屬電極層29,並介隔透明導電膜28Z於第2導電型半導體層35上形成第2金屬電極層39(金屬電極層形成步驟)。
第1金屬電極層29及第2金屬電極層39係藉由將印刷材料(例如油墨)進行印刷而形成。作為第1金屬電極層29及第2金屬電極層39之形成方法,可列舉網版印刷法、噴墨法、凹版塗佈法、或分注器法等。該等之中,較佳為網版印刷法。Then, as shown in FIG. 4C, a first
印刷材料係於絕緣性樹脂材料中包含粒子狀(例如球狀)之金屬材料。為調整黏度或塗佈性,印刷材料亦可包含溶劑等。 作為絕緣性之樹脂材料,可列舉基質樹脂等。詳細而言,作為絕緣性樹脂,較佳為高分子化合物,尤佳為熱固型樹脂或紫外線硬化型樹脂,代表例為環氧、胺基甲酸酯、聚酯或聚矽氧系之樹脂等。 作為金屬材料,可列舉銀、銅、鋁等。該等之中,較佳為包含銀粒子之銀膠。 例如,印刷材料中含有之金屬材料之比例係相對於印刷材料整體之重量比為85%以上95%以下。The printing material includes a particulate (for example, spherical) metal material in an insulating resin material. In order to adjust the viscosity or coatability, the printing material may also contain solvents and the like. Examples of insulating resin materials include matrix resins. In detail, as the insulating resin, a polymer compound is preferred, and a thermosetting resin or an ultraviolet curable resin is particularly preferred. Representative examples are epoxy, urethane, polyester, or silicone resins. Wait. As a metal material, silver, copper, aluminum, etc. are mentioned. Among them, silver paste containing silver particles is preferred. For example, the proportion of the metal material contained in the printing material is 85% or more and 95% or less than the weight ratio of the entire printing material.
其次,於第1金屬電極層29及第2金屬電極層39之印刷後,藉由加熱處理或紫外線照射處理而使第1金屬電極層29及第2金屬電極層39中之絕緣性樹脂硬化。此時,絕緣性樹脂材料滲出至第1金屬電極層29及第2金屬電極層39之周緣,於第1金屬電極層29之周緣及第2金屬電極層39之周緣,形成偏集存在有絕緣性樹脂材料之樹脂膜40。Next, after printing of the first
此時,第1金屬電極層29與第2金屬電極層39之間之透明導電膜28Z之凹凸構造(紋理構造)之谷部由樹脂膜40覆蓋。另一方面,第1金屬電極層29與第2金屬電極層39之間之透明導電膜28Z之凹凸構造之頂部未被樹脂膜40覆蓋而露出。
再者,以此方式由導電性膠形成之第1金屬電極層29及第2金屬電極層39亦可具有胺基甲酸酯鍵。例如與環氧樹脂相比,胺基甲酸酯樹脂係交聯時之收縮較小,樹脂中不易產生龜裂。若樹脂不易產生龜裂,則可防止蝕刻溶液滲入至金屬電極,從而可防止由金屬電極層之下之透明導電膜被蝕刻引起之金屬電極層之剝落、或長期可靠性之惡化。At this time, the valleys of the uneven structure (texture structure) of the transparent
其次,如圖4D所示,使用將第1金屬電極層29及其周緣之樹脂膜40、以及第2金屬電極層39及其周緣之樹脂膜40用作遮罩之蝕刻法,將透明導電膜28Z圖案化,藉此,形成相互分離之第1透明電極層28及第2透明電極層38(透明電極層形成步驟)。作為蝕刻法例如可列舉濕式蝕刻法,作為蝕刻溶液可列舉鹽酸(HCl)等酸性溶液。Next, as shown in FIG. 4D, using the first
此時,於第1金屬電極層29與第2金屬電極層39之間,透明導電膜28Z之蝕刻自凹凸構造(紋理構造)之頂部朝向谷部進行。
此處,為將第1透明電極層28與第2透明電極層38分離,該等之間之透明導電膜不連續即可,透明導電膜48亦可島狀地殘留於凹凸構造之谷部。若透明導電膜48以島狀殘留於凹凸構造之谷部,則凹凸構造之谷部中之樹脂膜40殘留於第1導電型半導體層25及第2導電型半導體層35上。
藉由以上步驟,完成本實施形態之背面電極型太陽電池1。At this time, between the first
此處,先前之太陽電池之製造方法係於透明導電膜形成步驟之後且金屬電極層形成步驟之前,包含透明電極層形成步驟。 於透明電極層形成步驟中,例如藉由使用光微影法將透明導電膜圖案化,而形成相互分離之第1透明電極層及第2透明電極層。於光微影法中, ∙於透明導電膜之上塗佈抗蝕劑, ∙藉由使抗蝕劑感光而於抗蝕劑形成開口, ∙將抗蝕劑作為遮罩,蝕刻於開口露出之透明導電膜,藉此,形成相互分離之第1透明電極層及第2透明電極層, ∙將抗蝕劑去除。Here, the previous method of manufacturing a solar cell includes a transparent electrode layer forming step after the transparent conductive film forming step and before the metal electrode layer forming step. In the transparent electrode layer forming step, for example, the transparent conductive film is patterned by using a photolithography method to form a first transparent electrode layer and a second transparent electrode layer separated from each other. In photolithography, ∙Coat resist on the transparent conductive film, ∙By sensitizing the resist to form an opening in the resist, ∙Use the resist as a mask to etch the transparent conductive film exposed in the opening to form a first transparent electrode layer and a second transparent electrode layer separated from each other. ∙Remove the resist.
相對於此,根據本實施形態之太陽電池之製造方法,於透明導電膜形成步驟之後,依序包含金屬電極層形成步驟及透明電極層形成步驟,且於透明電極層形成步驟中,將由金屬電極層形成步驟形成之第1金屬電極層29及第2金屬電極層39用作遮罩,將透明導電膜28Z圖案化,藉此,形成相互分離之第1透明電極層28及第2透明電極層38。藉此,根據本實施形態之太陽電池之製造方法,無需如先前般使用利用遮罩之光微影法等,便可簡化及縮短透明電極層之形成。其結果,能夠實現太陽電池及太陽電池模組之低成本化。In contrast to this, according to the solar cell manufacturing method of this embodiment, after the transparent conductive film forming step, the metal electrode layer forming step and the transparent electrode layer forming step are sequentially included, and in the transparent electrode layer forming step, the metal electrode The first
此處,若將第1金屬電極層29及第2金屬電極層39用作遮罩,將透明導電膜28Z圖案化,則於蝕刻透明導電膜28Z時,存在第1金屬電極層29及第2金屬電極層39之下之透明導電膜28Z亦被蝕刻,導致第1透明電極層28及第1金屬電極層29、以及第2透明電極層38及第2金屬電極層39剝離之可能性。Here, if the first
關於該點,根據本實施形態之太陽電池之製造方法,於金屬電極層形成步驟中,藉由印刷包含粒子狀之金屬材料、樹脂材料及溶劑之印刷材料且使其硬化,而於第1金屬電極層29之周緣及第2金屬電極層39之周緣形成偏集存在有樹脂材料之樹脂膜40,且於透明電極層形成步驟中,將第1金屬電極層29及其周緣之樹脂膜40、以及第2金屬電極層39及其周緣之樹脂膜40用作遮罩,將透明導電膜28Z圖案化。藉此,可抑制第1金屬電極層29及第2金屬電極層39之下之透明導電膜28Z之蝕刻,從而可抑制第1透明電極層28及第1金屬電極層29之剝離、以及第2透明電極層38及第2金屬電極層39之剝離。Regarding this point, according to the method of manufacturing a solar cell of this embodiment, in the metal electrode layer forming step, by printing and curing a printing material containing a particulate metal material, a resin material, and a solvent, the first metal The periphery of the
藉由此種製造方法製造之太陽電池1中,第1透明電極層28之帶寬窄於第1金屬電極層29之帶寬,第2透明電極層38之帶寬窄於第2金屬電極層39之帶寬,於第1金屬電極層29之周緣及第2金屬電極層39之周緣,形成偏集存在有第1金屬電極層29及第2金屬電極層39之印刷材料中之樹脂材料之樹脂膜。
再者,於由先前之太陽電池之製造方法製造之太陽電池中,一般而言,透明電極層之帶寬大於金屬電極層之帶寬。In the
又,由本實施形態之製造方法製造之太陽電池1中,第1金屬電極層29與第2金屬電極層39之間的第1導電型半導體層25之一部分及第2導電型半導體層35之一部分由樹脂膜40覆蓋。詳細而言,第1金屬電極層29與第2金屬電極層39之間的第1導電型半導體層25之凹凸構造(紋理構造)之谷部及第2導電型半導體層35之凹凸構造之谷部由樹脂膜40覆蓋。
又,於第1導電型半導體層25與樹脂膜40之層間及第2導電型半導體層35與樹脂膜40之層間,島狀(不連續)地配置有與第1透明電極層28及第2透明電極層38為相同材料之透明導電膜48。詳細而言,於第1導電型半導體層25之凹凸構造之谷部與樹脂膜40之層間及第2導電型半導體層35之凹凸構造之谷部與樹脂膜40之層間,島狀地配置有透明導電膜48。
藉此,第1導電型半導體層25及第2導電型半導體層35露出之面積變小。因此,可抑制太陽電池及太陽電池模組之劣化,從而太陽電池及太陽電池模組之可靠性(例如長期耐久性)提昇。In the
以上,對本發明之實施形態進行了說明,但本發明並非限定於上述實施形態,而能夠進行各種變更及變形。例如,於上述實施形態中,如圖3所示,例示了異質接面型太陽電池1,但本發明並不限於異質接面型太陽電池,亦可適用於同質接面型太陽電池等各種太陽電池。As mentioned above, although the embodiment of this invention was described, this invention is not limited to the said embodiment, Various changes and deformation are possible. For example, in the above embodiment, as shown in FIG. 3, the heterojunction type
又,於上述實施形態中,例示了具有結晶矽基板之太陽電池,但並非限定於此。例如,太陽電池亦可具有砷化鎵(GaAs)基板。 [實施例]In addition, in the above embodiment, a solar cell having a crystalline silicon substrate is exemplified, but it is not limited to this. For example, the solar cell may also have a gallium arsenide (GaAs) substrate. [Example]
以下,基於實施例具體地說明本發明,但本發明並非限定於以下實施例。Hereinafter, the present invention will be specifically explained based on examples, but the present invention is not limited to the following examples.
如下所述,按照圖4A~圖4D所示之步驟製作圖2及圖3所示之太陽電池1。As described below, the
首先,藉由於單晶矽基板之背面側進行各向異性蝕刻,而獲得於背面側形成有稜錐形紋理構造之半導體基板11。First, by performing anisotropic etching on the back side of the single crystal silicon substrate, a
其次,使用CVD法,於半導體基板11之整個背面側將鈍化膜及第1導電型半導體膜製膜之後,使用利用採用光微影技術產生之光阻(遮罩)之蝕刻法,於半導體基板11之背面側之一部分,形成鈍化層23及第1導電型半導體層25(半導體層形成步驟)。Next, using the CVD method, the passivation film and the first conductive semiconductor film are formed on the entire back side of the
其次,使用CVD法,於半導體基板11之整個背面側將鈍化膜及第2導電型半導體膜製膜之後,使用利用採用光微影技術產生之光阻(遮罩)之蝕刻法,於半導體基板11之背面側之另一部分,形成鈍化層33及第2導電型半導體層35(半導體層形成步驟)。Next, using the CVD method, the passivation film and the second conductive semiconductor film are formed on the entire back side of the
其次,使用CVD法,於第1導電型半導體層25及第2導電型半導體層35上,跨及該等形成透明導電膜28Z(透明導電膜形成步驟)。Next, using the CVD method, a transparent
其次,使用利用銀膠之網版印刷法,介隔透明導電膜28Z於第1導電型半導體層25上形成第1金屬電極層29,並介隔透明導電膜28Z於第2導電型半導體層35上形成第2金屬電極層39(金屬電極層形成步驟)。
其後,將第1金屬電極層29及第2金屬電極層39於180℃之烘箱中進行1小時加熱處理。藉此,印刷材料中之絕緣性樹脂材料滲出至第1金屬電極層29之周緣及第2金屬電極層39之周緣,於第1金屬電極層29之周緣及第2金屬電極層39之周緣形成樹脂膜40。Next, using the screen printing method using silver glue, the first
其次,使用將第1金屬電極層29及其周緣之樹脂膜40、以及第2金屬電極層39及其周緣之樹脂膜40用作遮罩之蝕刻法,將透明導電膜28Z圖案化,藉此,形成相互分離之第1透明電極層28及第2透明電極層38(透明電極層形成步驟)。作為蝕刻溶液,使用鹽酸(HCl)。Next, an etching method using the first
於以上述方式製作實施例之太陽電池之過程中,使用SEM(Field Emission Scanning Electron Microscope,場發射掃描型電子顯微鏡S4800,日立高新技術公司製造)觀測透明導電膜形成步驟及金屬電極層形成步驟之後且透明電極層形成步驟前之太陽電池之背面側。其結果示於圖5A~圖5C。In the process of manufacturing the solar cell of the embodiment in the above manner, after observing the transparent conductive film forming step and the metal electrode layer forming step using SEM (Field Emission Scanning Electron Microscope, Field Emission Scanning Electron Microscope S4800, manufactured by Hitachi High-Technologies Corporation) And the back side of the solar cell before the transparent electrode layer formation step. The results are shown in Figs. 5A to 5C.
圖5A係使用SEM以100倍之倍率觀測實施例之太陽電池之背面側之金屬電極層及金屬電極層間所得之結果,圖5B係使用SEM以450倍之倍率觀測圖5A之金屬電極層間之部分A所得之結果。圖5C係使用SEM以5000倍之倍率觀測圖5B之金屬電極層間之部分B所得之結果。Figure 5A is the result of observing the metal electrode layer and the metal electrode layer on the back side of the solar cell of the embodiment using SEM at a magnification of 100 times, and Figure 5B is using SEM to observe the part between the metal electrode layers of Figure 5A at a magnification of 450 times The result of A. FIG. 5C is the result of observing the part B between the metal electrode layers of FIG. 5B using SEM at a magnification of 5000 times.
根據圖5A~圖5C,確認到於第1金屬電極層29之周緣及第2金屬電極層39之周緣,形成有偏集存在有絕緣性樹脂材料之樹脂膜40(黑色部分)。
又,確認到第1金屬電極層29與第2金屬電極層39之間之透明導電膜28Z之凹凸構造(紋理構造)之谷部由樹脂膜40(黑色部分)覆蓋。另一方面,確認到第1金屬電極層29與第2金屬電極層39之間之透明導電膜28Z之凹凸構造之頂部未被樹脂膜40覆蓋而露出。藉此,預測於其後之透明電極層形成步驟之蝕刻中,透明導電膜28Z之蝕刻自凹凸構造之頂部朝向谷部進行。According to FIGS. 5A to 5C, it is confirmed that a resin film 40 (black portion) in which an insulating resin material is concentrated and present is formed on the periphery of the first
其次,於透明電極形成步驟之後,使用SEM觀測製作而成之實施例之太陽電池之背面側,確認到第1透明電極層28及第1金屬電極層29、以及第2透明電極層38及第2金屬電極層39未剝離。又,確認到於第1金屬電極層29與第2金屬電極層39之間之凹凸構造之谷部,樹脂膜40未被剝離而殘留。
進而,進行電極間之短路檢查,確認到電極層間無短路。
因樹脂膜40未被剝離,且電極層間無短路,故預測透明導電膜48以島狀殘留於第1導電型半導體層25之凹凸構造之谷部與樹脂膜40之層間、及第2導電型半導體層35之凹凸構造之谷部與樹脂膜40之層間,樹脂膜40得以保持。Next, after the transparent electrode formation step, the back side of the solar cell of the produced example was observed using SEM, and the first
1:太陽電池
2:配線構件
3:受光面保護構件
4:背面保護構件
5:密封材
7:第1導電型區域
7b:柵線部
7f:細柵線部
8:第2導電型區域
8b:柵線部
8f:細柵線部
11:半導體基板
13:鈍化層
23:鈍化層
25:第1導電型半導體層
27:第1電極層
28:第1透明電極層
28Z:透明導電膜
29:第1金屬電極層
33:鈍化層
35:第2導電型半導體層
37:第2電極層
38:第2透明電極層
39:第2金屬電極層
40:樹脂膜
48:透明導電膜
100:太陽電池模組
A:部分1: solar battery
2: Wiring member
3: Light-receiving surface protection member
4: Back protection member
5: Sealing material
7: The first
圖1係表示本實施形態之太陽電池模組之一例之側視圖。 圖2係自背面側觀察本實施形態之太陽電池所得之圖。 圖3係圖2之太陽電池中之III-III線剖視圖。 圖4A係表示本實施形態之太陽電池之製造方法中之半導體層形成步驟之圖。 圖4B係表示本實施形態之太陽電池之製造方法中之透明導電膜形成步驟之圖。 圖4C係表示本實施形態之太陽電池之製造方法中之金屬電極層形成步驟之圖。 圖4D係表示本實施形態之太陽電池之製造方法中之透明電極層形成步驟之圖。 圖5A係使用SEM以100倍之倍率觀測實施例之太陽電池之背面側之金屬電極層及金屬電極層間所得之結果。 圖5B係使用SEM以450倍之倍率觀測圖5A之金屬電極層間之部分A所得之結果。 圖5C係使用SEM以5000倍之倍率觀測圖5B之金屬電極層間之部分B所得之結果。Fig. 1 is a side view showing an example of the solar cell module of this embodiment. Fig. 2 is a view of the solar cell of this embodiment viewed from the back side. Fig. 3 is a cross-sectional view taken along the line III-III of the solar cell of Fig. 2; FIG. 4A is a diagram showing the steps of forming a semiconductor layer in the method of manufacturing a solar cell of this embodiment. FIG. 4B is a diagram showing a step of forming a transparent conductive film in the method of manufacturing a solar cell of this embodiment. 4C is a diagram showing the steps of forming the metal electrode layer in the method of manufacturing the solar cell of this embodiment. FIG. 4D is a diagram showing a step of forming a transparent electrode layer in the method of manufacturing a solar cell of this embodiment. FIG. 5A is a result obtained by observing the metal electrode layer and the metal electrode layer on the back side of the solar cell of the embodiment using SEM at a magnification of 100 times. FIG. 5B is a result obtained by observing the part A between the metal electrode layers of FIG. 5A using a SEM at a magnification of 450 times. FIG. 5C is the result of observing the part B between the metal electrode layers of FIG. 5B using SEM at a magnification of 5000 times.
7:第1導電型區域 7: The first conductivity type area
7f:細柵線部 7f: Thin grid line part
8:第2導電型區域 8: The second conductivity type area
8f:細柵線部 8f: Thin grid line part
11:半導體基板 11: Semiconductor substrate
13:鈍化層 13: Passivation layer
23:鈍化層 23: Passivation layer
25:第1導電型半導體層 25: The first conductivity type semiconductor layer
27:第1電極層 27: The first electrode layer
28:第1透明電極層 28: The first transparent electrode layer
29:第1金屬電極層 29: The first metal electrode layer
33:鈍化層 33: passivation layer
35:第2導電型半導體層 35: second conductivity type semiconductor layer
37:第2電極層 37: 2nd electrode layer
38:第2透明電極層 38: The second transparent electrode layer
39:第2金屬電極層 39: The second metal electrode layer
40:樹脂膜 40: Resin film
48:透明導電膜 48: Transparent conductive film
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KR101539047B1 (en) * | 2008-12-24 | 2015-07-23 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | Photoelectric conversion device and Manufacturing method thereof |
JP5891375B2 (en) * | 2011-07-29 | 2016-03-23 | パナソニックIpマネジメント株式会社 | Photovoltaic module |
JP5820265B2 (en) * | 2011-12-21 | 2015-11-24 | シャープ株式会社 | Back electrode type solar cell and manufacturing method thereof |
JP2013239476A (en) * | 2012-05-11 | 2013-11-28 | Mitsubishi Electric Corp | Photovoltaic device and method of manufacturing the same, and photovoltaic module |
CN104854708B (en) * | 2013-05-17 | 2016-05-18 | 株式会社钟化 | Solar cell and manufacture method thereof and solar module |
US10566470B2 (en) * | 2015-01-07 | 2020-02-18 | Kaneka Corporation | Solar cell, method for manufacturing same and solar cell module |
CN107408588B (en) * | 2015-03-30 | 2019-12-13 | 松下知识产权经营株式会社 | solar cell and method for manufacturing solar cell |
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2019
- 2019-10-11 WO PCT/JP2019/040249 patent/WO2020090423A1/en active Application Filing
- 2019-10-11 CN CN201980057021.8A patent/CN112640133B/en active Active
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JPWO2020090423A1 (en) | 2021-09-16 |
TWI816920B (en) | 2023-10-01 |
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