CN112635515B - MicroLED display device based on quantum dot color conversion layer and preparation method thereof - Google Patents
MicroLED display device based on quantum dot color conversion layer and preparation method thereof Download PDFInfo
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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Abstract
The invention provides a micro LED display device based on a quantum dot color conversion layer and a preparation method thereof, wherein the micro LED display device comprises a micro LED array and the quantum dot color conversion layer bonded with the micro LED array, the quantum dot color conversion layer comprises a micro channel transparent substrate layer and a micro channel inverted mould layer which are bonded with each other, the micro channel inverted mould layer comprises at least one pixel point, the pixel point comprises at least one group of quantum dot positions for injecting quantum dot solution, a liquid inlet hole for realizing the inflow of the quantum dot solution and a liquid outlet hole for realizing the outflow of the quantum dot solution, the inlet and the outlet of each quantum dot position in the pixel point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through the non-crossed micro channel, the quantum dot solution is injected into each group of quantum dot positions, and the quantum dot for realizing the color conversion is formed after photocuring. The quantum dots of the quantum dot color conversion layer are not doped with the photoresist, so that the quantum dots are not degraded, the conversion efficiency of the quantum dots is not reduced, and the quantum dots are not wasted greatly.
Description
Technical Field
The invention relates to the technical field of MicroLED display, in particular to a MicroLED display device based on a quantum dot color conversion layer and a preparation method thereof.
Background
A micro led array generally refers to a two-dimensional array of pixel light-emitting units integrated on a single chip at high density. Typically, the size of a single micro led is less than 100 μm. The integration of the single-color micro LED array and the color conversion layer is a convenient and feasible method for realizing the full-color display of the micro LED. Quantum dot color conversion layers with different colors can be bonded on the monochromatic MicroLED arrays, and the light emitted by each MicroLED is converted into different colors, so that full-color display of the MicroLED arrays is formed.
At present, the technology for preparing the quantum dot color conversion layer mainly comprises two schemes of ink-jet printing and photoresist doping patterning. The ink-jet printing technology is limited by the precision of equipment, and the ink-jet printing has the characteristics that the uniformity is difficult to control and the coffee ring effect is easy to appear, and is difficult to realize when the pattern is less than 20 mu m; although the photoresist doping patterning technology can realize the preparation of small-size pixel points below 10 microns, the doped photoetching machine easily degrades the quantum points, the conversion efficiency is reduced, and in addition, the method causes a large amount of quantum point waste.
Disclosure of Invention
The invention aims to provide a micro LED display device based on a quantum dot color conversion layer and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the invention provides a micro LED display device based on a quantum dot color conversion layer, which comprises a micro LED array and a quantum dot color conversion layer bonded with the micro LED array, wherein the quantum dot color conversion layer comprises a micro channel transparent substrate layer and a micro channel inverted mould layer which are bonded with each other, the micro channel inverted mould layer comprises at least one pixel point, the pixel point comprises at least one group of quantum dot positions for injecting quantum dot solution, a liquid inlet hole for realizing the inflow of the quantum dot solution and a liquid outlet hole for realizing the outflow of the quantum dot solution, the inlet and the outlet of each quantum dot position in the pixel point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through non-crossed micro channels, the quantum dot solution is injected into each group of quantum dot positions, and quantum dots for realizing color conversion are formed after photocuring.
Preferably, when the pixel point is one, the inlet and the outlet of each set of quantum point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through a micro-channel.
Preferably, when there are at least two pixel points, the inlet and the outlet of the quantum dot position converted into the same color in each pixel point are sequentially communicated through the micro flow channel according to the liquid injection sequence, and the first injected quantum dot position is communicated with the corresponding liquid inlet hole through the micro flow channel, and the last injected quantum dot position is communicated with the corresponding liquid outlet hole through the micro flow channel, or the inlet and the outlet of each group of quantum dot positions in each pixel point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through one micro flow channel.
Preferably, each pixel point comprises two sets of quantum point positions, namely a red light quantum point position and a green light quantum point position.
Preferably, in each pixel point, the red light quantum dot positions and the green light quantum dot positions are arranged line by line according to the sequence, or in two adjacent pixel points, one pixel point is arranged line by line according to the sequence of the red light quantum dot positions and the green light quantum dot positions, and the other pixel point is arranged line by line according to the sequence of the green light quantum dot positions and the red light quantum dot positions.
Preferably, the micro flow channel transparent substrate layer is bonded on the upper side or the lower side of the micro flow channel inverted mold layer, and the micro flow channel transparent substrate layer is glass, quartz, PMMA, polymer, PI, PET, PVA, PEN or PDMS.
Preferably, the optical isolation structure is prepared on the micro-channel inverted mould layer or on the micro-channel transparent substrate layer corresponding to the position between the two groups of quantum dots.
Preferably, a filter film is attached to the upper side or the lower side of the optical isolation structure.
Preferably, the MicroLED array comprises a driving substrate and LED core particles, wherein the LED core particles are prepared on the driving substrate, and the quantum dot color conversion layer is aligned and bonded with the LED core particles.
The invention also provides a preparation method of the MicroLED display device based on the quantum dot color conversion layer, which comprises the following steps:
s1, respectively preparing a MicroLED display array and a quantum dot color conversion layer, and aligning and bonding the prepared MicroLED display array and the quantum dot color conversion layer to form a MicroLED display device; the method for preparing the quantum dot color conversion layer comprises the following steps:
s11, designing and manufacturing a mask substrate with patterns according to the distribution of the pixel points; the pixel point comprises at least one group of quantum point positions for injecting quantum dot solution to realize original light color conversion and a micro-channel for realizing the flow of the quantum dot solution;
s12, attaching the mask substrate and the micro-channel back-mold layer, preparing the micro-channel and the quantum dot position on the micro-channel back-mold layer, drilling a liquid inlet hole and a liquid outlet hole for realizing the inflow and outflow of the quantum dot solution on the micro-channel back-mold layer, and bonding the micro-channel back-mold layer and the micro-channel transparent substrate layer;
s13, injecting the quantum dot solution into the micro-channel reverse mould layer through the liquid inlet hole, enabling the quantum dot solution to flow into the corresponding quantum dot positions through the micro-channel in a non-crossed manner, and enabling the quantum dot solution in the quantum dot positions to flow out through the liquid outlet hole, wherein the quantum dot solution in the quantum dot positions forms quantum dots after photocuring.
Preferably, after step S1, the method further includes the following steps:
and S2, preparing an optical isolation structure on the micro-channel transparent substrate layer or on the micro-channel inverted mould layer corresponding to the position between the two groups of quantum dots.
The invention can obtain the following technical effects:
1. the preparation method has few steps, and the preparation of the quantum dot color conversion layer can be completed only by one micro-channel back mold layer, one mask substrate, two quantum dot injection processes and one optical isolation structure manufacturing process.
2. The thickness of the quantum dots may be controlled by the height of the mask substrate pattern.
3. The micro LED display device based on the quantum dot color conversion layer can realize color conversion of different colors at the same time only by one micro channel inverted mode layer.
4. The quantum dot color conversion layer prepared by the micro-channel technology has the advantages of small pixel size and high utilization rate of quantum dot materials.
5. By using the optical isolation structure and the filter membrane, only the pixel point of the micro-channel reverse mode layer can emit light, so that stray light is effectively inhibited.
6. The quantum dots are not doped with a photoresist and cannot be degraded, so that the conversion efficiency of the quantum dots cannot be reduced, and the quantum dots cannot be wasted greatly.
Drawings
Fig. 1 is a schematic structural diagram of a micro led display device based on a quantum dot color conversion layer according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a quantum dot color conversion layer according to a first embodiment of the invention;
FIG. 3 is a schematic structural diagram of a micro flow channel molding layer according to an embodiment of the invention;
FIG. 4 is a schematic view of another structure of a micro flow channel molding layer according to an embodiment of the invention;
FIG. 5 is a schematic structural diagram of a MicroLED display device based on a quantum dot color conversion layer according to a second embodiment of the present invention;
FIG. 6 is a schematic diagram of a quantum dot based color conversion layer according to a second embodiment of the invention;
FIG. 7 is a schematic flow chart of a preparation method of a micro LED display device based on a quantum dot color conversion layer according to a third embodiment of the invention;
fig. 8 is a schematic view of a dynamic process of a preparation method of a quantum dot-based color conversion layer according to a third embodiment of the present invention.
Wherein the reference numerals include: the micro LED display device comprises a micro LED display device 1, a micro channel reverse mold layer 11, red light quantum dots 12, green light quantum dots 13, a transmission region 14, a micro channel transparent substrate layer 15, an optical isolation structure 16, a red light quantum dot position 111, a green light quantum dot position 112, a hollow dot position 113, a first liquid inlet hole 114, a second liquid inlet hole 115, a first liquid outlet hole 116, a second liquid outlet hole 117, a micro channel 118, a micro LED array 2, a driving substrate 21, LED core particles 22 and a mask substrate 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
The embodiment of the invention provides a micro LED display device based on a quantum dot color conversion layer, which comprises a micro LED array and the quantum dot color conversion layer, wherein the micro LED array comprises a driving substrate and LED core particles prepared on the driving substrate, the driving substrate is used for supplying power to the LED core particles, the LED core particles emit light under the power supply of the driving substrate, and the quantum dot color conversion layer and the LED core particles are aligned and bonded.
The quantum dot color conversion layer comprises a micro-channel transparent substrate layer and a micro-channel inverse mould layer, the micro-channel transparent substrate layer is bonded with the micro-channel inverse mould layer, and the micro-channel transparent substrate layer can be bonded on the upper side or the lower side of the micro-channel inverse mould layer.
The micro-channel reverse-mode layer comprises at least one pixel point, each pixel point corresponds to one LED core particle, each pixel point comprises at least one group of quantum dot positions for injecting quantum dot solution, a liquid inlet hole for realizing quantum dot solution inflow and a liquid outlet hole for realizing quantum dot solution outflow, and the inlet and the outlet of each quantum dot position in each pixel point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through non-crossed micro-channels.
And quantum dot solution is injected into each group of quantum dot positions through the liquid inlet holes, and the quantum dot solution is solidified to form quantum dots which are used for realizing the conversion of original light colors.
Based on the consideration of three primary colors, each pixel point comprises two groups of quantum dots, namely a red light quantum dot and a green light quantum dot, wherein the red light quantum dot formed by curing in the red light quantum dot is used for converting blue light into red light, the green light quantum dot formed by curing in the green light quantum dot is used for converting the blue light into green light, the blue light can directly penetrate through the micro-channel back mold layer, and finally, each pixel emits the blue light, the green light and the red light.
In order to improve the penetration effect of blue light, a hollow point is arranged in each pixel point, namely a cavity is arranged, so that the blue light directly penetrates out of the micro-channel inverted-mode layer.
When the pixel point is one, the inlet and the outlet of the red light quantum point are communicated with the corresponding liquid inlet and the liquid outlet through a micro-channel. The inlet and outlet of the green light quantum point are communicated with the corresponding liquid inlet and outlet holes through another micro-channel. The two micro channels do not cross and interfere with each other, and do not affect each other.
When the number of the pixel points is at least two, the inlet and the outlet of the quantum point position converted into the same color in each pixel point are communicated sequentially through the micro-channel according to the liquid injection sequence, the first quantum point position for liquid injection is communicated with the corresponding liquid inlet hole through the micro-channel, the last quantum point position for liquid injection is communicated with the corresponding liquid outlet hole through the micro-channel, or the inlet and the outlet of each group of quantum point positions in each pixel point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through one micro-channel.
The structure of the micro led display device based on the quantum dot color conversion layer provided in the present invention is described in detail with two specific embodiments.
Example one
Fig. 1 shows a structure of a micro led display device based on a quantum dot color conversion layer according to an embodiment of the present invention.
As shown in fig. 1, the micro LED display device based on the quantum dot color conversion layer includes a quantum dot color conversion layer 1 and a micro LED array 2, the micro LED array 2 includes a driving substrate 21 and a plurality of LED core particles 22, the plurality of LED core particles 22 are prepared on the driving substrate 21, the driving substrate 21 is used for supplying power to the plurality of LED core particles 22, and the plurality of LED core particles 22 emit light under the power supply of the driving substrate 21.
The quantum dot color conversion layer 1 and the micro LED array 2 are aligned and bonded, so that light emitted by the LED core particles 22 is converted into light with different colors through the quantum dot color conversion layer 1, and a full-color micro LED display device is realized.
Fig. 2 shows a structure of a micro led display device based on a quantum dot color conversion layer according to an embodiment of the invention.
As shown in fig. 2, a quantum dot color conversion layer 1 according to a first embodiment of the present invention includes: micro-channel back mold layer 11 and micro-channel transparent substrate layer 15, micro-channel transparent substrate layer 15 bonds in the bottom side of micro-channel back mold layer 11, is formed with ruddiness quantum dot 12, green glow quantum dot 13 and transmission area 14 in micro-channel back mold layer 11, and ruddiness quantum dot 12 is used for converting the blue light into ruddiness, and green glow quantum dot 13 is used for converting the blue light into the green glow, and transmission area 14 is used for making the blue light directly to emit out, and does not change the colour.
Fig. 3 shows a structure of a micro flow channel inverse mold layer according to a first embodiment of the invention.
As shown in fig. 3, the micro flow channel inverse mold layer 11 includes at least one pixel, each pixel includes at least one group of red light quantum dot 111, green light quantum dot 112, empty dot 113, first liquid inlet hole 114, second liquid inlet hole 115, first liquid outlet hole 116, second liquid outlet hole 117, and micro flow channel 118, the number of quantum dot of one color is at least one, fig. 2 exemplarily shows four pixels, the four pixels respectively include four red light quantum dot 111, four green light quantum dot 112, and four empty dot 113 arranged in a line, and each pixel is arranged in the order of red light quantum dot 111, green light quantum dot 112, and empty dot 113. Red light quantum dot sites 111 are used for injecting red light quantum dot solution, green light quantum dot sites 112 are used for injecting green light quantum dot solution, and four empty dot sites 113 constitute a blue light transmission zone.
When the micro-channel back mold layer 11 includes one pixel point, the inlets and outlets of the four red light quantum dot positions 111 are sequentially communicated through the micro-channel 118, the inlet of the first red light quantum dot position injected with the red light quantum dot solution is communicated with the first liquid inlet hole 114 through the micro-channel 118, and the outlet of the last red light quantum dot position injected with the red light quantum dot solution is communicated with the first liquid outlet hole 116. The red light quantum dot solution is injected from the first liquid inlet hole 114, flows into the red light quantum dot 111 through the micro channel 118, flows to the first liquid outlet hole 116 through the micro channel 118, and finally flows out from the first liquid outlet hole 116.
Similarly, the inlets and outlets of the four green light quantum dot positions 112 are sequentially communicated through the micro flow channel 118, the inlet of the green light quantum dot position in which the green light quantum dot solution is injected first is communicated with the second liquid inlet hole 115 through the micro flow channel 118, and the outlet of the green light quantum dot position in which the green light quantum dot solution is injected last is communicated with the second liquid outlet hole 117.
When the micro flow channel inverse model layer 11 includes at least two pixel points, the four red light quantum dot sites 111 of each pixel point can respectively pass through a first liquid inlet hole 114 and a second liquid inlet hole 115 to realize the injection and outflow of the red light quantum dot solution, or the four red light quantum dot sites 111 of each pixel point jointly use one first liquid inlet hole 114 and one second liquid inlet hole 115 to realize the injection and outflow of the red light quantum dot solution.
The four green light quantum dot sites 112 can be obtained in the same way, and the injection and the outflow of the green light quantum dot solution can be realized by respectively passing through one first liquid inlet hole 114 and one second liquid inlet hole 115, or the injection and the outflow of the red light quantum dot solution can be realized by commonly using one first liquid inlet hole 114 and one second liquid inlet hole 115 for the four green light quantum dot sites 112 of each pixel point.
In order to simplify the fabrication process of the micro flow channel back mold layer 11, a liquid injection mode in which the quantum dots of the same color between the pixel points commonly use the liquid inlet hole and the liquid outlet hole is preferably adopted.
Fig. 3 also shows the liquid injection mode of the common liquid inlet hole and the liquid outlet hole. The red light quantum dot solution is sequentially injected into the four red light quantum dot positions 111 of the first pixel point from left to right through the first liquid inlet hole 114, flows to the next pixel point after being turned by the micro-channel 118, is sequentially injected into the four red light quantum dot positions 111 from left to right, circulates in the way, and finally flows out of the first liquid outlet hole 116. And the red light quantum dot solution in the red light quantum dot position 111 forms red light quantum dots after photocuring. The green light quantum dot solution is sequentially injected into the four green light quantum dot positions 112 of the first pixel point from right to left through the second liquid inlet hole 115, flows to the next pixel point after being turned by the micro-channel 118, and then is sequentially injected into the green light quantum dot positions 112 from right to left, and finally flows out of the second liquid outlet hole 117 in the circulation. The green quantum dot solution in the green quantum dot site 112 forms green quantum dots after photocuring.
Fig. 4 shows another structure of the micro flow channel inverse mold layer according to the first embodiment of the invention.
As shown in fig. 4, the micro flow channel inverse mold layer 11 includes at least two pixel points, each pixel point includes at least one group of red light quantum dot 111, green light quantum dot 112, empty dot 113, first liquid inlet hole 114, second liquid inlet hole 115, first liquid outlet hole 116, second liquid outlet hole 117, and micro flow channel 118, four pixel points are shown in fig. 3 arranged row by row, and the number of the red light quantum dot 111, the green light quantum dot 112, and the empty dot 113 in each pixel point is four respectively.
The pixels in the first row and the pixels in the third row are all arranged line by line in the sequence of the red light quantum dot position 111, the green light quantum dot position 112 and the empty dot position 113, and the pixels in the second row and the pixels in the fourth row are all arranged line by line in the sequence of the green light quantum dot position 112, the red light quantum dot position 111 and the empty dot position 113.
When the micro flow channel reverse mode layer 11 includes more rows of pixels, the pixels in the odd rows are all arranged line by line in the sequence of the red light quantum dot 111, the green light quantum dot 112 and the empty dot 113, and the pixels in the even rows are all arranged line by line in the sequence of the green light quantum dot 112, the red light quantum dot 111 and the empty dot 113.
The four red light quantum dot sites 111 in each row of pixel points are communicated through the micro-channel 118, the red light quantum dot sites 111 in different rows of pixel points are also communicated through the micro-channel 118, the inlet of the first red light quantum dot site injected with the red light quantum dot solution is communicated with the first liquid inlet hole 114 through the micro-channel 118, and the outlet of the last red light quantum dot site injected with the red light quantum dot solution is communicated with the first liquid outlet hole 116 through the micro-channel 118.
The red light quantum dot solution is injected into the leftmost red light quantum dot position 111 of the first pixel point through the first liquid inlet hole 114, flows to the rightmost side after flowing through the other three red light quantum dot positions 111 through the micro-channel 118, flows into the rightmost red light quantum dot position 111 of the second pixel point after being turned by the micro-channel 118, flows to the left side, flows into the leftmost red light quantum dot position 111 of the third pixel point after being turned by the micro-channel 118, flows from left to right, circulates in the way, and finally flows out of the first liquid outlet hole 116.
The green light quantum dot sites 112 are similar to each other, and it can be seen that the green light quantum dot solution is injected from the second liquid inlet hole 115, flows through each green light quantum dot site 112 in the first pixel point according to the flow direction from left to right, flows into the second pixel point after turning, flows through each green light quantum dot site 112 in the second pixel point according to the flow direction from right to left, and thus repeatedly and sequentially injects the green light quantum dot solution into each green light quantum dot site 112 in the order from left to right and from right to left, and finally flows out from the second liquid outlet hole 117.
In the first embodiment, the two structures of the micro-channel inverse mold layer 11 are the same in that the first liquid inlet hole 114 and the first liquid outlet hole 116 are matched with the second liquid inlet hole 115 and the second liquid outlet hole 117, so that the micro-channel through which the red light quantum dot solution flows and the micro-channel through which the green light quantum dot solution flows do not intersect with each other and do not interfere with each other. The two structures of the micro-channel inverted-mode layer are different in that the arrangement sequence of red light quantum dots and green light quantum dots among different pixel points is inconsistent.
Returning to fig. 2, after forming the red light quantum dots 12 and the green light quantum dots 13 in each pixel point of the micro channel inverse model layer 11, an optical isolation structure 16 may be further prepared on the micro channel inverse model layer 11 corresponding to each pixel point, so that the micro channel inverse model layer 11 emits light only from the pixel point. More specifically, the optical isolation structure 16 is prepared on the micro flow channel back-mold layer 11 at a position corresponding to between the red light quantum dots 12 and the green light quantum dots 13. When the transmission region 14 is formed in the micro flow channel inverse mode layer 11, the optical isolation structure 16 is correspondingly prepared at the position between the green light quantum dot 13 and the transmission region 14 and the position between the red light quantum dot 12 and the transmission region 14.
The optical isolation structure 16 is made of a metal film, a polymer material or a doped polymer and the like, can reflect or absorb light except for the region outside the pixel point, only emits light from the red light quantum dots 12, the green light quantum dots 13 and the transmission region 14 of the pixel point, and does not have redundant blue light stray light at the red light quantum dots 12 and the green light quantum dots 13, so that stray light is effectively inhibited.
In one example of the present invention, a filter film, such as a DBR or the like, that can filter background light is attached below or above the optical isolation structure 16, and the filter film needs to be subjected to directional divisional etching, where blue light as background light needs to be transmitted.
The micro flow channel transparent substrate layer 15 may be a flexible substrate or a hard substrate, the flexible substrate may be PI, PET, PVA, PEN, PDMS, or the like, and the hard substrate may be glass, quartz, PMMA, or a polymer, or the like.
Returning to fig. 1, after the quantum dot color conversion layer 1 is manufactured, the micro led array 2 is integrated with the quantum dot color conversion layer 1, that is, the background light micro led array 2 is integrated on the bottom side of the micro channel transparent substrate layer 15.
Example two
Fig. 5 shows a structure of a micro led display device based on a quantum dot color conversion layer according to a second embodiment of the present invention.
As shown in fig. 5, the micro LED display device 1 based on the quantum dot color conversion layer according to the second embodiment of the present invention includes a quantum dot color conversion layer 1 and a micro LED array 2, the micro LED array 2 includes a driving substrate 21 and a plurality of LED core particles 22, the quantum dot color conversion layer 1 and the micro LED array 2 are aligned and bonded, so that light emitted by the plurality of LED core particles 22 is converted into light of different colors through the quantum dot color conversion layer 1, thereby implementing a full-color micro LED display device.
Fig. 6 is a structure of a quantum dot color conversion layer according to a second embodiment of the present invention.
As shown in fig. 6, the quantum dot color conversion layer 1 includes a micro channel inverse mold layer 11 and a micro channel transparent substrate layer 15, and is different from the first embodiment in that the micro channel transparent substrate layer 15 is bonded to the top side of the micro channel inverse mold layer 11, and an optical isolation structure 16 is prepared on the micro channel transparent substrate layer 15. The specific structure of the micro channel inverse mold layer 11 is the same as that of the micro channel inverse mold layer 11 in the first embodiment, and therefore, the detailed description thereof is omitted.
After the quantum dot color conversion layer 1 is manufactured, the micro LED array 2 and the quantum dot color conversion layer 1 are integrated, namely the micro LED array 2 is integrated on the bottom side of the micro channel reverse molding layer 11, and the bottom side of the micro channel reverse molding layer 11 is the side of the micro channel reverse molding layer 11 departing from the micro channel transparent substrate layer 15.
The foregoing details the structure of the micro led display device based on the quantum dot color conversion layer according to the embodiments of the present invention. Corresponding to the micro LED display device based on the quantum dot color conversion layer, the invention also provides a preparation method of the micro LED display device based on the quantum dot color conversion layer.
EXAMPLE III
Fig. 7 shows a flow of a method for manufacturing a micro led display device based on a quantum dot color conversion layer according to a third embodiment of the present invention.
As shown in fig. 7, a method for manufacturing a micro led display device based on a quantum dot color conversion layer according to a third embodiment of the present invention includes the following steps:
s1, respectively preparing the MicroLED display array and the quantum dot color conversion layer, and aligning and bonding the prepared MicroLED display array and the quantum dot color conversion layer to form the MicroLED display device.
Fig. 8 shows a dynamic process of a method for preparing a quantum dot-based color conversion layer according to the third embodiment of the present invention.
As shown in fig. 7 and 8 together, the method for preparing a quantum dot based color conversion layer includes:
and S11, designing and manufacturing a mask substrate with patterns according to the distribution of the pixel points.
The pixel points comprise at least one group of quantum point positions for injecting quantum dot solution to realize original light color conversion and micro channels for realizing the flow of the quantum dot solution.
The quantum dot positions are divided into two types according to different colors, namely a red light quantum dot position 111 and a green light quantum dot position 112, wherein the red light quantum dot position 111 is used for injecting red light quantum dot solution, and the green light quantum dot position 112 is used for injecting green light quantum dot solution.
The pixel may also include a blank spot 113 to allow ambient light to pass directly through.
According to the structure and distribution of the pixel points, the pattern of the mask substrate 3 is designed, and the preparation of micro-channels and quantum point positions is realized. The thickness of the quantum dots can be controlled by the height of the pattern of the mask substrate 3.
S12, attaching the mask substrate and the micro-channel back-mold layer, preparing the micro-channel and the quantum dot position on the micro-channel back-mold layer, drilling a liquid inlet hole and a liquid outlet hole for realizing the inflow and outflow of the quantum dot solution on the micro-channel back-mold layer, and bonding the micro-channel back-mold layer and the micro-channel transparent substrate layer.
After the mask substrate 3 is attached to the micro flow channel mold-backing layer 11, a channel and a cavity are formed on the micro flow channel mold-backing layer 11, the channel serves as a micro flow channel, and the cavity serves as a quantum dot.
The liquid inlet hole and the liquid outlet hole are respectively communicated with the quantum dot position through the micro-channel, the quantum dot solution is injected from the liquid inlet hole, flows into the quantum dot position through the micro-channel and finally flows out of the liquid outlet hole, and the quantum dot solution in the quantum dot position forms the quantum dot after photocuring.
The micro channels corresponding to the red light quantum dot positions and the green light quantum dot positions are designed to be not crossed with each other and not interfered with each other, so that the micro LED display device based on the quantum dot color conversion layer can be manufactured through one micro channel reverse mold layer.
The micro-channel transparent substrate layer 15 can be bonded on the top side of the micro-channel inverse-molding layer 11, and can also be bonded on the bottom side of the micro-channel inverse-molding layer 11.
S13, injecting the quantum dot solution into the micro-channel reverse mould layer through the liquid inlet hole, enabling the quantum dot solution to flow into the corresponding quantum dot positions through the micro-channel in a non-crossed manner, and enabling the quantum dot solution in the quantum dot positions to flow out through the liquid outlet hole, wherein the quantum dot solution in the quantum dot positions forms quantum dots after photocuring.
According to the invention, red light quantum dot solution and green light quantum dot solution can be injected into the red light quantum dot position 111 and the green light quantum dot position 112 at the same time, and the red light quantum dot solution and the green light quantum dot solution can be injected into the red light quantum dot position and the green light quantum dot position according to the sequence.
In a specific example of the present invention, after step S1, the method further includes the following steps:
and S2, preparing an optical isolation structure on the micro-channel transparent substrate layer or on the micro-channel inverted mould layer corresponding to the position between the two groups of quantum dots.
A layer of filter film is attached below or above the optical isolation structure, and the optical isolation structure and the filter film can ensure that only pixel points of the micro-channel reverse mode layer can emit light, so that stray light is effectively inhibited.
The quantum dots are not doped with the photoresist, so that the quantum dots are not degraded, the conversion efficiency of the quantum dots is not reduced, and the quantum dots are not wasted greatly.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (9)
1. A micro LED display device based on a quantum dot color conversion layer comprises a micro LED array and is characterized by further comprising a quantum dot color conversion layer bonded with the micro LED array, wherein the quantum dot color conversion layer comprises a micro channel transparent substrate layer and a micro channel inverted mode layer which are bonded with each other, the micro channel inverted mode layer comprises at least one pixel point, the pixel point comprises at least one group of quantum dot positions used for injecting quantum dot solution, a liquid inlet hole used for realizing the inflow of the quantum dot solution and a liquid outlet hole used for realizing the outflow of the quantum dot solution, the inlet and the outlet of each quantum dot position in the pixel point are respectively communicated with the corresponding liquid inlet hole and the corresponding liquid outlet hole through non-crossed micro channels, the quantum dot solution is injected into each group of quantum dot positions, and quantum dots used for realizing color conversion are formed after photocuring; each pixel point comprises two groups of quantum point positions, namely a red light quantum point position and a green light quantum point position; in each pixel point, the red light quantum point locations and the green light quantum point locations are arranged line by line according to the sequence, or in two adjacent pixel points, one pixel point is arranged line by line according to the sequence of the red light quantum point locations and the green light quantum point locations, and the other pixel point is arranged line by line according to the sequence of the green light quantum point locations and the red light quantum point locations.
2. A micro led display device according to claim 1, wherein when there is one pixel, the inlet and outlet of each set of quantum dot are connected to the corresponding liquid inlet and outlet via a micro channel.
3. A micro led display device according to claim 1, wherein when there are at least two of the pixel points, the inlets and outlets of the quantum dots converted to the same color in each pixel point are sequentially communicated via the micro flow channel in the order of liquid injection, and the first injected quantum dot is communicated with the corresponding liquid inlet via the micro flow channel, and the last injected quantum dot is communicated with the corresponding liquid outlet via the micro flow channel, or the inlets and outlets of each set of quantum dots in each pixel point are communicated with the corresponding liquid inlet and liquid outlet via one micro flow channel, respectively.
4. A micro led display device according to claim 1, wherein the micro channel transparent substrate layer is bonded to the upper or lower side of the micro channel inverse mode layer, and is glass, quartz or polymer.
5. A MicroLED display device according to claim 4, wherein a light isolation structure is fabricated on the microchannel inverse mould layer or on the microchannel transparent substrate layer corresponding to the position between the two sets of quantum dots.
6. A MicroLED display device according to claim 5, wherein a light filter is attached to the top or bottom of the light isolating structure.
7. A micro LED display device according to claim 1, wherein the micro LED array comprises a driving substrate and LED core particles, the LED core particles are prepared on the driving substrate, and the quantum dot color conversion layer is aligned and bonded to the LED core particles.
8. A preparation method of a micro LED display device based on a quantum dot color conversion layer is characterized by comprising the following steps:
s1, respectively preparing a MicroLED display array and a quantum dot color conversion layer, and aligning and bonding the prepared MicroLED display array and the quantum dot color conversion layer to form a MicroLED display device; the method for preparing the quantum dot color conversion layer comprises the following steps:
s11, designing and manufacturing a mask substrate with patterns according to the distribution of the pixel points; the pixel point comprises at least one group of quantum point positions for injecting quantum dot solution to realize original light color conversion and a micro-channel for realizing the flow of the quantum dot solution;
s12, attaching the mask substrate and a micro-channel back-mold layer, preparing the micro-channel and the quantum dot position on the micro-channel back-mold layer, drilling a liquid inlet hole and a liquid outlet hole for realizing the inflow and outflow of a quantum dot solution on the micro-channel back-mold layer, and bonding the micro-channel back-mold layer and a micro-channel transparent substrate layer;
s13, quantum dot solution is injected into the micro-channel inverted mould layer through the liquid inlet hole, flows into the corresponding quantum dot positions through the micro-channel in a non-crossed manner and then flows out through the liquid outlet hole, and the quantum dot solution in the quantum dot positions forms quantum dots after photocuring.
9. A method of fabricating a micro led display device based on a quantum dot color conversion layer as claimed in claim 8, further comprising the following steps after step S1:
s2, preparing an optical isolation structure on the micro-channel transparent substrate layer or on the micro-channel inverted-mode layer corresponding to the position between the two groups of quantum dots.
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