CN109979960A - The production method of full-color Micro-LED display device based on quantum dot light conversion layer - Google Patents
The production method of full-color Micro-LED display device based on quantum dot light conversion layer Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The production method of full-color Micro-LED display device based on quantum dot light conversion layer, it is related to display preparation technical field, it solves existing quanta point material and is directly applied to the surface Micro-LED, after the completion of coating processes, quanta point material above adjacent pixel unit understands horizontal proliferation in low temperature thermal annealing process, and the mixing of different quanta point materials will cause serious optical crosstalk problem.Array of source there are problems that being difficult to separate together with quantum dot film layer tight adhesion, by will prepare light conversion layer substrate at the quanta point material zone coated of different colours to glass or polymeric substrates different location.Monochromatic Micro-LED array of display and light conversion baseplate are bonded, realize the full-color display of Micro-LED.Bottom portion of groove prepares DBR reflecting mirror and inhibits the outgoing of monochrome Micro-LED array light source, improves light source utilization rate.It is few that the full-color Micro-LED display device of method preparation has an adjacent pixel optical crosstalk, and excitation light source utilization rate is high, the high advantage of display quality.
Description
Technical field
The present invention relates to display preparation technical fields, and in particular to a kind of based on the full-color of quantum dot light conversion layer
Micro-LED display device and preparation method thereof.
Background technique
Micro-LED be recently as micro-nano technology technology continue to develop, traditional LED miniaturise it is newest at
The luminescence unit size of fruit, traditional LED is typically larger than 100 μm, and the size of single Micro-LED is less than 100 μm.Micro-
Light-emitting diode display part is exactly that two-dimensional array display device composed by highdensity pixel light emission unit is integrated on monolithic.
Micro-LED display device compares LCD and OLED display device, in power consumption, service life, responsiveness, visible angle all
With advantage, while also having and being better than LCD, close to the display quality of OLED.
Currently, the Study on manufacturing process of monochromatic Micro-LED display device has very much, and manufacture craft is also more mature.Entirely
Currently there are mainly three types of modes for the preparation of color Micro-LED display device: the assembly of three-primary color LED chip, fluorescent powder light conversion layer,
Tricolor projection.Projection display technique principle itself is unsuitable for FPD, and three primary colours also face huge in terms of being assembled in flood tide transfer
Big problem.And by quantum dot color converting layer scheme, it is a kind of more convenient, the feasible method for realizing full-color display.
Quanta point material has adjustable emission spectrum, wide excitation spectrum, narrow as a kind of novel inorganic semiconductor nano
The advantages that half-peak breadth, good light stability, high fluorescent yield.Based on the superior photoluminescence property of quanta point material, as
Light conversion layer material substitutes conventional fluorescent powder, has many advantages.
It is beaten currently, mainly directlying adopt ink-jet based on Micro-LED and the quanta point material method for preparing display device
Print and the mode of atomizing spraying coat quanta point material, and the quantum above adjacent pixel unit in Micro-LED chip surface
Point material meeting horizontal proliferation, mixing of different quanta point materials in low temperature thermal annealing process will cause serious optical crosstalk and ask
Topic.After the completion of coating processes, array of source is just together with quantum dot film layer tight adhesion, it is difficult to separate.Meanwhile quantum dot material
Material characteristic is influenced very greatly by temperature and steam, when exposing in the natural environment, quanta point material characteristic rapid decay.General amount
Many process difficulties are faced when realizing subsequent encapsulation process after son point light conversion material plane printing.
Summary of the invention
The present invention is to solve existing quanta point material to be directly applied to the surface Micro-LED, after the completion of coating processes, adjacent picture
Quanta point material above plain unit understands horizontal proliferation in low temperature thermal annealing process, and the mixing of different quanta point materials causes sternly
The optical crosstalk problem of weight, array of source and quantum dot film layer tight adhesion are difficult to the problem of separating, and provide a kind of based on quantum dot
The production method of the full-color Micro-LED display device of light conversion layer.
The production method of full-color Micro-LED display device based on quantum dot light conversion layer, this method is by following steps
It realizes:
Step 1: selection monochrome Micro-LED array；Substrate is provided, and prepares groove array on the substrate；It is described
Groove array further groove sum is identical as Micro-LED chip count in monochrome Micro-LED array；
Step 2: plating film preparation in each bottom portion of groove in each recess sidewall evaporated metal layer of the groove array
The reflecting layer DBR；
Step 3: red light quantum point material is filled into the groove array by the way of two column fillings, one column
The reflecting layer DBR on；
Green light quantum point material is anti-by the DBR being filled into the groove array in the way of two column fillings, one column
It penetrates on layer；
Step 4: quanta point material protective layer is filled into each groove in the groove array, quantum dot is obtained
Light conversion layer substrate；
Step 5: the quantum dot light conversion laminar substrate that step 4 is obtained is buckled to above monochromatic Micro-LED array, system
Finish into full-color Micro-LED display device.
Beneficial effects of the present invention:
The preparation method of full-color Micro-LED display device of the present invention is transferred using atomizing spraying or template
Quanta point material is coated on substrate in evenly arranged groove by mode, mainly have the advantage that using atomizing spraying and
The mode of template transfer can guarantee the uniformity of quantum dot.Meanwhile the present invention is to filling quanta point material in each groove
Mode does not have particular/special requirement, is able to achieve the accurate coating of quanta point material in groove.
The present invention designs groove of uniformly arranging on the substrate prepared, and inside grooves fill different colours quanta point material, recessed
Groove sidewall prepares metallic reflector, and bottom portion of groove is deposited distributed Bragg reflecting layer, had both avoided component between different quantum dots
Crosslinking, also inhibit the optical crosstalk between adjacent pixel luminescence unit, effectively improve colorization show quality.
The preparation method of full-color Micro-LED display device of the present invention, by the way that quanta point material is prepared in base
On plate, quanta point material is not contacted directly with array light source, is by the alignment pressing of the backboard of substrate and monochrome Micro-LED array
Full-color Micro-LED array light source can be prepared.Substrate surface is handled by coating process, is had to different color light different saturating
Rate and reflectivity are crossed, the utilization rate of excitation light source is improved, has also further filtered out part to human eye nocuousness spectral component.Together
When, monochromatic Micro-LED array of display backboard and light conversion baseplate bond, and light conversion layer substrate is also easy to and light source substrate point
From, it is contemplated that inorganic semiconductor array light source service life converts layer material much larger than quantum dot light, and light source can repeat substantially
It uses, therefore, the present invention can reduce the cost of full-color Micro-LED display device.
Detailed description of the invention
Fig. 1 is the production method of the full-color Micro-LED display device of the present invention based on quantum dot light conversion layer
Flow chart；
Fig. 2 is the production method of the full-color Micro-LED display device of the present invention based on quantum dot light conversion layer
Middle monochrome Micro-LED prepares schematic diagram, wherein Fig. 2 a is the schematic diagram that epitaxial wafer is bonded with backboard, and Fig. 2 b is monochrome Micro-
LED array sectional view, Fig. 2 c are monochrome Micro-LED array top view.
Fig. 3 a to Fig. 3 g full-color Micro-LED display device of the present invention based on quantum dot light conversion layer in Fig. 3
Production method in make substrate schematic diagram, wherein Fig. 3 a be substrate structural schematic diagram, Fig. 3 b be groove is made on substrate
The schematic diagram of array；Fig. 3 c is the schematic diagram of metal layer, and Fig. 3 d is the schematic diagram in the reflecting layer DBR, and Fig. 3 e is filling red quantum
The schematic diagram of point material, Fig. 3 f are the schematic diagram for filling green light quantum point material, and Fig. 3 g is filling quantum dot material protection layer
Schematic diagram；
Fig. 4 is the production using the full-color Micro-LED display device of the present invention based on quantum dot light conversion layer
Method, the sectional view of the full-color Micro-LED display device of production；
Fig. 5 is quantum dot atomization spraying equipment operation principle schematic diagram.
In figure: 1, Si base CMOS active matrix driving backboard；2, GaN base LED epitaxial wafer；3, monochrome Micro-LED array；4, base
Plate；5, groove array；6, metal layer；7, the reflecting layer DBR；8, red light quantum point material；9, green light quantum point material；10, quantum
Point material protection layer；11, supersonic generator；12,N2Source；13, hyperfine nozzle；14, six axis precision stepper motor；15, glass
Glass pipe or hollow rubber pipe；16, quantum dot light converts laminar substrate；17, Sapphire Substrate.
Specific embodiment
It is carried out below with reference to technical effect of the embodiment and attached drawing to design of the invention, specific structure and generation clear
Chu is fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this hair
Bright a part of the embodiment, rather than whole embodiments, based on the embodiment of the present invention, those skilled in the art are not being paid
Other embodiments obtained, belong to the scope of protection of the invention under the premise of creative work.
Specific embodiment one illustrates present embodiment in conjunction with Fig. 1 to Fig. 4, based on the full-color of quantum dot light conversion layer
The production method of Micro-LED display device, this method are realized by following steps:
Step S101: providing blue-ray LED epitaxial wafer, the Si base CMOS passive drive backboard of Sapphire Substrate 17, monochromatic
The production of Micro-LED display device；
In conjunction with Fig. 2 a, by 1 wafer scale of the GaN base LED epitaxial wafer 2 of Sapphire Substrate 17 and Si base CMOS active matrix driving backboard
After bonding, after laser lift-off Sapphire Substrate 17, using the technologies such as ICP etching prepare single pixel can independent addressing driving list
Color Micro-LED array 3, Fig. 2 b are monochrome Micro-LED array sectional view, and Fig. 2 c is monochrome Micro-LED array top view.
Transfer printing process preparation can also be used in the preparation of the monochrome Micro-LED array 3.By single blue light Micro-LED
Core particles successively or are in batches welded on Si base CMOS active matrix driving backboard 1 for several times by, are splashed using magnetic control using the method for transfer
Penetrate, be deposited, the techniques such as photoetching prepare common end grounding electrode, prepare single pixel can independent addressing driving monochromatic Micro-
LED array 3, the monochromatic Micro-LED array sectional view prepared is as shown in Figure 2 b, on Si base CMOS active matrix driving backboard 1
Micro-LED top view is as shown in Figure 2 c.
Step S102: providing substrate, and nano impression prepares groove on substrate.
In conjunction with Fig. 3, it is sequentially prepared out groove array 5 on substrate 4 (such as Fig. 3 a), such as Fig. 3 b；Reflecting metal film layer 6, such as
Fig. 3 c；Reflecting layer distribution bragg (DBR) 7, such as Fig. 3 d；Red light quantum point material 8, such as Fig. 3 e；Green light quantum point material 9, such as
Fig. 3 f；Quantum dot protective layer material 10, such as Fig. 3 g；The reflecting metal film layer 6 is with the reflecting layer DBR 7 without tight on preparation flow
Lattice sequencing.Red light quantum point material 8 is with green light quantum point material 9 without stringent sequencing in zone coated process.Its
In, groove array 5 is prepared at first, and quantum dot protective layer material 10 is finally prepared.
In conjunction with Fig. 3 b, the groove array 5 of the preparation is two-dimentional groove array, two-dimentional groove array total number and monochrome
LED unit number is identical in Micro-LED array 3, and monochromatic Micro-LED array 3 can be correspondingly embedded in groove array 5, such as schemes
4。
In conjunction with Fig. 3 a, the material of the substrate 4 is quartz glass or other glass or transparent polymer material, when substrate 4
When material is quartz, the preparation of reverse mould technology is can be used in groove array 5.When 4 material of substrate is polymer P MMA, PDMS etc., use
Metal nano is stamped in surface of polymer material and imprints out groove array 5, and the preparation of reverse mould technology can also be used.Groove array 5
Length and width dimensions are greater than the lateral dimension of single Micro-LED, guarantee that single Micro-LED pixel can be embedded in groove array 5, recessed
The depth of slot array 5 is bigger than the height of single Micro-LED, and depth of groove specific value is greater than single Micro-LED, distribution cloth
Glug reflecting layer 7, red light quantum point material 8, green light quantum point material 9, quantum dot protective layer material 10 overall thickness.
Step S103: magnetron sputtering apparatus, evaporation metal reflecting mirror are provided.
In conjunction with Fig. 3 c, the material of the reflective metal layer 6 is Al, Ag etc..The material of reflective metal layer 6 is also possible to light-blocking
Black matrix polymer material improves microarray and shows quality to realize the optical crosstalk inhibited between adjacent pixel luminescence unit.Tool
For body, preferably reflective metal layer 6, reflective metal layer 6 also could alternatively be the black resin production of carbon particle doping every
Light black matrix material.
Step S104: providing filming equipment, prepares the reflecting layer DBR.
In conjunction with Fig. 3 d, the preparation in 5 reflecting layer bottom portion of groove DBR 7 of substrate recess array is realized using coating process, recessed
The reflecting layer trench bottom DBR 7 inhibits the blue light of monochromatic Micro-LED array light source 3 to be emitted, and the reflecting layer DBR 7 is to blu-ray reflection rate
Height, transmitance is low, and the reflecting layer DBR 7 is low to feux rouges, green reflection rate, and transmissivity is high.The DBR reflection being deposited inside adjacent grooves
Material component, the thickness of layer 7 may be different, it is also possible to different.
Step S105: quanta point material, atomization spraying equipment or transfer apparatus are provided, are filled into the quanta point material
In groove.
In conjunction with Fig. 3 e, the zone coated of the red light quantum point material 8 is realized using two ways, the first is in Fig. 4
Atomizing spraying mode, second is transfer modes.The red light quantum point material, can also based on traditional CdSe quantum dot
To be the new-type red light quantum point material such as InP, ZnCuInS or perovskite.The red light quantum point material be aqueous phase quantum point or
Oily phase quanta point material.The transfer or spraying of the red light quantum point material 8 follow the principle of column spraying, i.e., each column spray phase
Same red light quantum point material 8.Red light quantum point material 8 is in plane groove array 5 every one column of two column sprayings or transfer.
In conjunction with Fig. 3 f, the zone coated of the green light quantum point material 9 is realized using two ways, the first is in Fig. 4
Atomizing spraying mode, second is transfer modes.The green light quantum point material, can also based on traditional CdSe quantum dot
To be the new-type green light quantum point materials such as carbon dots, InP, ZnCuInS or perovskite.The green light quantum point material is water phase quantum
Point or oily phase quantum dot.The principle of column spraying is followed when the transfer of green light quantum point material 9 or spraying, i.e., each column spray phase
Same green light quantum point material 9.Green light quantum point material 9 is in substrate recess array 5 every one column of two column sprayings or transfer.
In conjunction with Fig. 3 f, after the completion of the red light quantum point material 8 and the spraying of green light quantum point material 9 or transfer, use is low
The mode of warm evaporation is handled, and so that solvent is volatilized, is obtained quantum dot solid particle.
Step S106: quantum point protection layer material is filled in each groove.
In conjunction with Fig. 3 g, the quanta point material protective layer 10 uses polymer material spin coating or low temperature depositing SiO2It is sealed
Dress realizes isolation of the quanta point material to steam, oxygen, guarantees the high-quality light Photoluminescence Properties and longevity of quanta point material
Life.
Step S107: being aligned the monochrome Micro-LED display device and quantum dot light conversion laminar substrate and combine, complete
It is prepared at display device.
It is Si base CMOS active matrix driving backboard 1, GaN base monochrome Micro-LED array 3 and quantum dot in Fig. 4 in conjunction with Fig. 4
Schematic diagram after light conversion layer substrate 16 is integrated.The quantum dot light conversion laminar substrate 16 and monochrome Micro-LED array light source 3
It is integrated to be realized by alignment, press equipment, such as upside-down mounting soldering equipment, metallographic microscope etc., it is not necessarily to heat treatment process, is realized monochromatic
Micro-LED array light source 3, the quantum dot light conversion alignment of laminar substrate 16 are chimeric, when 5 material of substrate recess array is polymerization
When object, low temperature and pressure realizes the good combination of groove array 5 and monochrome Micro-LED array light source 3.When substrate recess array 5
When material is glass, a little transparent lubricating oil, the groove array 5 and monochrome Micro-LED are sprayed in the surrounding of groove array 5
Good combination can be realized in the alignment pressing of array light source 3.
In present embodiment, 4,3 working life of monochrome Micro-LED array is much larger than 8 He of quanta point material
9, the quanta point material characteristic attenuation converts laminar substrate in application, passing through and replacing quantum dot light to full-color show is unable to satisfy
16, the recycling of monochrome Micro-LED array 3 is realized, to greatly reduce the full-color Micro-LED array display of production
The cost of part.
Illustrate in embodiment is described with reference to Fig.5, Fig. 5 for quantum dot atomization spraying equipment working principle: ultrasonic atomizatio
11 ultrasonic atomizatio aqueous phase quantum point of device or oily phase quantum dot, N2Source 12 generates N2Air-flow serves as carrier gas, N2Quantum after sweeping along atomization
Point material reaches hyperfine nozzle 13 by glass tube or hollow rubber pipe 15, and hyperfine nozzle 13 is in six axis precision stepper motors
Accurate quantitative coating of the quanta point material into groove array 5 is realized under 14 control.
The high-quality light Photoluminescence Properties of quanta point material in present embodiment are currently still to be improved, material settling out
Property also still have much room for improvement, but with the continuous development of quanta point material maturation, meanwhile, by its in terms of luminescence generated by light: hair
The advantages that penetrating adjustable spectrum, wide excitation spectrum, narrow half-peak breadth, fluorescent yield high (QY), quanta point material is based on monochrome
Micro-LED array will be used widely in terms of making full-color Micro-LED array display devices.
Claims (10)
1. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer, it is characterized in that: this method by with
Lower step is realized:
Step 1: selection monochrome Micro-LED array (3)；Substrate is provided, and prepares groove array (5) on the substrate；Institute
It is identical as Micro-LED chip count in monochrome Micro-LED array to state groove array (5) further groove sum；
Step 2: in each recess sidewall evaporated metal layer (6) of the groove array (5), in each bottom portion of groove plated film system
Standby the reflecting layer DBR (7)；
Step 3: red light quantum point material (8) is filled into the groove array (5) in the way of arranging one column of filling every two
In the reflecting layer DBR (7) on；
By green light quantum point material (9) by the DBR being filled into the way of two column fillings, one column in the groove array (5)
On reflecting layer (7)；
Step 4: quanta point material protective layer (10) is filled into each groove in the groove array (5), quantum is obtained
Point light conversion layer substrate (16)；
Step 5: quantum dot light conversion laminar substrate (16) that step 4 is obtained is buckled on monochromatic Micro-LED array (3)
Side, complete full-color Micro-LED display device.
2. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: in step 1, the light source of the monochrome Micro-LED array (3) is blue light.
3. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: the size of each groove is greater than single Micro-LED core in monochrome Micro-LED array (3) in the groove array (5)
The lateral dimension of piece, the depth of each groove are greater than the height of single Micro-LED chip.
4. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: the substrate (4) is glass substrate or polymeric substrates, and groove array (5) is using etching, nano impression or by Si
It is prepared by the method for template reverse mould.
5. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: in step 2, the metal layer (6) is metal material Al or metal Ag material；
Metal layer (6) are replaced every light black matrix material using what the black resin of carbon particle doping made.
6. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: the red light quantum point material (8) and green light quantum point material (9) are quantum dot solution, quantum dot powder or quantum dot-
Polymer powder.
7. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
It is:
Red light quantum point material (8) be CdSe, InP, ZnCuInS or perovskite quanta point material, the quanta point material used for
Aqueous phase quantum point or oily phase quantum dot；
Green light quantum point material (9) is CdSe, carbon dots, InP, ZnCuInS or perovskite quanta point material, the quantum dot material of use
Material is aqueous phase quantum point or oily phase quantum dot.
8. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: the quanta point material protective layer (10) uses polymer material spin coating or low temperature depositing SiO2It is packaged.
9. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, feature
Be: the filling of the red light quantum point material (8) and green light quantum point material (9) passes through transfer, inkjet printing, atomizing spraying
Or the mode of spin coating is realized.
10. the production method of the full-color Micro-LED display device based on quantum dot light conversion layer according to claim 1, special
Sign is: in step 5, quantum dot light converts laminar substrate (16) and the integrated of monochrome Micro-LED array (3) uses microscope
Alignment, is pressed by upside-down mounting soldering equipment.
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