CN113380775A - Full-color Micro-LED display device based on quantum dots inside glass and preparation method thereof - Google Patents
Full-color Micro-LED display device based on quantum dots inside glass and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a full-color Micro-LED display device based on quantum dots in glass and a preparation method thereof. The Micro-LED light-emitting device mainly comprises a glass body, a Micro-LED light-emitting device array and a Micro-LED driving chip from top to bottom; the Micro-LED light-emitting device array is mainly formed by arranging a plurality of Micro-LED light-emitting devices in an interval array mode, the Micro-LED light-emitting devices are electrically connected and packaged on a Micro-LED driving chip, and quantum dot light-emitting units distributed in an array mode are arranged in a glass machine body; the quantum dot light-emitting units are generated by direct writing induction of ultrafast laser inside the glass machine body, and each quantum dot light-emitting unit in the glass machine body has different light-emitting wavelengths. The full-color Micro-LED display device prepared by the method has smaller size and lower cost, and overcomes the problem of poor stability of the perovskite material.
Description
Technical Field
The invention belongs to the field of semiconductor illumination application and display devices, and relates to a full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation and a preparation method thereof.
Background
With the continuous development of information technology, the requirements for low power consumption, high color gamut, high brightness, high resolution display and illumination technology are also continuously improved, and a new generation of Micro-LED technology is produced. At present, the preparation process of a single-color Micro-LED is mature, and quantum dot materials are coated on the surface of a Micro-LED chip mainly by adopting ink-jet printing and atomization spraying methods. However, for full-color multicolor Micro-LED display devices, the size of the individual color cells of these approaches is limited and light crosstalk due to quantum dot material mixing between adjacent different color cells is inevitably encountered.
The perovskite quantum dot material serving as a novel inorganic semiconductor nanocrystal has the advantages of adjustable emission spectrum, wide excitation spectrum, narrow half-peak width, good light stability, high fluorescence yield and the like. However, since the formation energy of the inorganic perovskite material is low, it is easily degraded or phase-changed in the natural environment, and this process is accelerated by heating or exposure to moisture and ultraviolet irradiation. To overcome this obstacle and improve the stability of perovskite materials, a series of strategies such as adding protective layers with organic materials and doping with different halogen ions, etc. have been developed. However, these methods are not sufficient to protect the quantum dots from the external environment, and there still exist many defects in practical applications, such as poor thermal stability, low threshold of light damage, loss of color saturation, and the like. The method for separating out quantum dots in glass ensures that the prepared device has excellent optical transparency and long-term thermal stability, and is expected to become a better matrix material in the fields of photonics and optoelectronics.
Generally, one common method for obtaining precipitated quantum dots in glass is heat treatment, but the traditional heat treatment method can only realize the precipitation of quantum dots in the whole glass block, and cannot control the space selective distribution of the quantum dots in a glass matrix.
Most studies describe a two-step technique involving laser irradiation to generate nuclei and subsequent thermal treatment to grow the nuclei, a simpler, faster laser direct writing to form stable perovskite quantum dots within the glass is still necessary.
Disclosure of Invention
In order to solve the problems in the background art, the invention aims to provide a full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation and a preparation method thereof.
The purpose of the invention is realized by the following technical scheme:
the utility model provides a full-color Micro-LED display device based on inside quantum dot of laser induction glass is appeared:
the Micro-LED light-emitting device mainly comprises a glass body, a Micro-LED light-emitting device array and a Micro-LED driving chip from top to bottom; the Micro-LED light-emitting device array is mainly formed by arranging a plurality of Micro-LED light-emitting devices in an interval array mode, the Micro-LED light-emitting devices are electrically connected and packaged on a Micro-LED driving chip, and quantum dot light-emitting units distributed in an array mode are arranged in a glass machine body.
The quantum dot light-emitting unit is generated by the ultrafast laser through direct writing induction in the glass body.
And each quantum dot light-emitting unit in the glass body has different light-emitting wavelengths.
The laser parameters of the ultrashort pulse laser are adjustable, and include pulse width, repetition frequency and pulse energy.
The number of the Micro-LED light-emitting devices is the same as that of the quantum dot light-emitting units in the glass machine body, and the Micro-LED light-emitting devices correspond to the quantum dot light-emitting units in the glass machine body one by one, so that the array distribution of the Micro-LED light-emitting devices is completely the same as that of the quantum dot light-emitting units in the glass machine body, and one Micro-LED light-emitting device is arranged below one quantum dot light-emitting unit.
The Micro-LED driving chip drives the Micro-LED light-emitting device to excite the quantum dot light-emitting units to emit light with the wavelength of the Micro-LED light-emitting device, and the quantum dot light-emitting units with different wavelengths emit light and then display color on the glass body.
The display points of the full-color Micro-LED display device are formed by a plurality of quantum dot light-emitting units which are arranged together in an adjacent array mode and serve as basic display units, the light-emitting wavelength of each quantum dot light-emitting unit in each display point is the same, and the light-emitting wavelength of different display points is different.
Secondly, a laser process preparation method of the full-color Micro-LED display device comprises the following steps:
firstly, quantum dots are generated by directly writing and inducing ultrafast laser in a glass machine body, and the quantum dots with different light-emitting wavelengths are generated by adjusting laser parameters of the ultrafast laser in different areas in the glass machine body, so that a full-color Micro-LED pixel dot array for displaying is formed in the glass machine body;
then, the Micro-LED light-emitting device array is electrically connected to the Micro-LED driving chip;
then, the glass machine body is placed on the Micro-LED light-emitting device array, so that the array distribution of the Micro-LED light-emitting devices is completely the same as the array distribution of the quantum dot light-emitting units in the glass machine body, and one Micro-LED light-emitting device is arranged below one quantum dot light-emitting unit.
The laser beam of the ultrafast laser is a laser beam with Gaussian distribution, and the laser beam with Gaussian distribution is shaped into a vortex beam and a Bessel beam through the beam to adapt to different process requirements.
The invention can realize controllable precipitation of different types of quantum dots in the halogen-doped glass by using the ultrafast laser irradiation method, and can realize full-color Micro-LED display by further combining with a Micro-LED blue light chip.
Compared with the prior art, the invention has the beneficial effects that:
(1) compared with a preparation method for coating the quantum dot material on the surface of the Micro-LED chip by ink-jet printing and atomized spraying and a device prepared by the preparation method, the invention utilizes laser irradiation to induce the size and the light-emitting wavelength of a single light-emitting unit in glass to be controllable, the distance between the light-emitting units is controllable, and the perovskite quantum dot precipitated in the glass overcomes the problem of poor stability of the perovskite material.
(2) The full-color Micro-LED display device prepared by the invention has smaller size.
The size of the display point of the current commercial micro-LED as the basic display unit is about 100 microns, the manufacturing process is complex, while the size of the display point of the basic display unit is about 10 microns, the size is more compact, and the display point is smaller by one order of magnitude than the size of the traditional micro-LED display unit.
Therefore, the full-color Micro-LED display device prepared by the method is lower in cost. Compared with the traditional scheme, the method has the advantages of simple process, reduced manufacturing cost of the luminescent material and high industrial production rate.
Drawings
FIG. 1 is a graph of the luminescence spectrum of the luminescence unit of the Micro-LED display device manufactured by the present invention.
Fig. 2 is a schematic diagram of a laser apparatus for use with the present invention.
FIG. 3 is a graph of the luminescence spectrum of quantum dots inside the glass under different laser irradiation parameters.
FIG. 4 is a schematic view of the assembly of a glass internal light-emitting quantum dot array and a Micro-LED blue light chip prepared by the method.
FIG. 5 is a schematic diagram of a full color Micro-LED display device.
In the figure: the device comprises a half-wave plate (2), an attenuation plate (3), a beam expander (4), an aperture diaphragm (5), a dielectric film reflecting mirror (6), an objective lens (7), a glass sample (8), a triaxial displacement table (9) and a computer (10); the LED light source comprises a quantum dot light emitting unit (11), a glass machine body (12), a single Micro-LED light emitting device (13) and a Micro-LED driving chip (14).
Detailed Description
The invention is further described with reference to the accompanying drawings and the detailed description.
As shown in fig. 4 and 5, the whole device mainly comprises a glass body 12, a Micro-LED light emitting device array and a Micro-LED driving chip 14 from top to bottom; the Micro-LED light-emitting device array is mainly formed by arranging a plurality of Micro-LED light-emitting devices 13 in an interval array mode, the Micro-LED light-emitting devices 13 are electrically connected and packaged on a Micro-LED driving chip 14, and quantum dot light-emitting units 11 distributed in an array mode are arranged in a glass machine body 12.
As shown in FIG. 4, the full-color Micro-LED display device provided by the invention is divided into two layers, wherein the upper layer is an array of quantum dots precipitated in glass, and the lower layer is a Micro-LED blue-light chip.
The quantum dot light-emitting units 11 are quantum dots generated by direct writing induction of ultrafast laser inside the glass body 12, and each quantum dot light-emitting unit 11 in the glass body 12 has different light-emitting wavelengths.
The laser parameters of the ultrashort pulse laser 1 are adjustable, and include pulse width, repetition frequency and pulse energy. The light-emitting wavelength of the quantum dots generated by direct writing induction inside the glass body 12 is adjusted by laser parameters such as pulse width, repetition frequency, pulse energy and the like.
The number of the Micro-LED light-emitting devices 13 is the same as that of the quantum dot light-emitting units 11 in the glass body 12, and the Micro-LED light-emitting devices 13 correspond to the quantum dot light-emitting units 11 in the glass body 12 one by one, so that the array distribution of the Micro-LED light-emitting devices 13 is completely the same as that of the quantum dot light-emitting units 11 in the glass body 12, and one Micro-LED light-emitting device 13 is arranged below one quantum dot light-emitting unit 11.
The Micro-LED driving chip 14 drives the Micro-LED light-emitting device 13 to excite the quantum dot light-emitting unit 11 to emit light with the wavelength of the light, and the quantum dot light-emitting units 11 with different wavelengths emit light and then display color on the glass body 12.
The display dots of the full-color Micro-LED display device are composed of a plurality of quantum dot light-emitting units 11 which are arranged together in an adjacent array mode, and are used as basic display units, the light-emitting wavelengths of the quantum dot light-emitting units 11 in the display dots are the same, and the light-emitting wavelengths of different display dots are different.
As shown in fig. 2, the preparation apparatus of the present invention includes an ultrashort pulse laser 1, a half-wave plate 2, an attenuator 3, a beam expander 4, an aperture stop 5, a dielectric film mirror 6, an objective lens 7, a triaxial displacement stage 9 and a computer 10;
an ultrafast laser beam emitted by an ultrashort pulse laser 1 sequentially passes through a half-wave plate 2, an attenuation plate 3, a beam expander 4 and an aperture diaphragm 5, then enters a dielectric film reflector 6 to be reflected, then is reflected by the dielectric film reflector 6, and then enters a glass sample 8 on a triaxial displacement table 9 through an objective lens 7, and the triaxial displacement table 9 is connected with a computer 10.
The computer 10 drives the three-axis movement of the three-axis displacement table 9 to further drive the movement of the glass sample 8, so that ultrafast laser beams emitted by the ultrashort pulse laser 1 are subjected to direct writing induction at different positions of the glass sample 8 to generate quantum dots.
The ultrashort pulse laser 1 can also be connected to a computer 10, and the movement of the triaxial displacement table 9 and the laser output parameters of the ultrashort pulse laser 1 can be controlled by the computer 10.
The laser process preparation process of the invention is as follows:
firstly, as shown in fig. 4, quantum dots are generated by the ultrafast laser through direct writing induction in the glass body, the quantum dots are the quantum dot light-emitting units 11, and quantum dots with different light-emitting wavelengths are generated by adjusting the laser parameters of the ultrafast laser in different areas in the glass body through direct writing induction, so that a full-color Micro-LED pixel dot array for display is formed in the glass body;
next, as shown in fig. 4, the Micro-LED light emitting device array is electrically connected to the Micro-LED driving chip 14;
then, as shown in fig. 5, the glass body is placed on the array of Micro-LED light emitting devices, so that the array distribution of the Micro-LED light emitting devices 13 is completely the same as the array distribution of the quantum dot light emitting units 11 in the glass body 12, and one Micro-LED light emitting device 13 is provided below each quantum dot light emitting unit 11.
The band gap of the perovskite quantum dot is induced by laser, and the light emitting wavelength of the quantum dot is regulated and controlled by laser parameters such as pulse width, repetition frequency and pulse energy.
The laser beam of the ultrafast laser is a laser beam with Gaussian distribution, and the laser beam with Gaussian distribution can be shaped into a vortex beam and a Bessel beam through the beam so as to adapt to different process requirements and adapt to different process requirements.
In specific implementation, the full-color Micro-LED display device is divided into a double-layer structure, the bottom layer is a Micro-LED light-emitting device, a Micro GaN blue light chip and a controller, and the upper layer is a glass body and different kinds of CsPbX separated by in-situ induction in the glass body3A perovskite quantum dot lattice.
The ultrafast laser is focused in the glass body to regulate the pulse width of the laserDifferent kinds of CsPbX are separated out in the glass by parameters such as repetition frequency, single pulse energy and the like3And (4) quantum dots.
CsPbX3Quantum dots, e.g. CsPbCl3，CsPbBr3，CsPbI3Etc., respectively having blue, green and red light emissions. Different light-emitting wavelengths of blue, green and red light are generated at different display points, as shown in fig. 1, a micron-sized lattice containing quantum dots can be induced and formed inside glass by utilizing ultrafast laser, and the micron-sized lattice can further correspond to the light-emitting wavelengths of the pixel points of the Micro-LED display array one by one, so that a full-color Micro-LED display device is obtained.
Detailed description of the preferred embodimentsa specific example of the present invention is shown in fig. 3, where different display points are set with different light emission wavelengths, for example, colors other than three primary colors, such as yellow and orange, can be used to realize more vivid color combination display.
The quantum dot light-emitting units demonstrated by the embodiment of the invention do not need a packaging protective layer, and have good stability under ultraviolet light and natural conditions.
The invention may be modified in numerous ways, as will be apparent to those skilled in the art, and may be embodied in other forms, structures, arrangements, proportions, and with other components, materials, and parts.
Claims (9)
1. The utility model provides a full-color Micro-LED display device based on inside quantum dot of laser induction glass is appeared which characterized in that: the Micro-LED light-emitting device mainly comprises a glass body (12), a Micro-LED light-emitting device array and a Micro-LED driving chip (14) from top to bottom; the Micro-LED light-emitting device array is mainly formed by arranging a plurality of Micro-LED light-emitting devices (13) in an interval array mode, the Micro-LED light-emitting devices (13) are electrically connected and packaged on a Micro-LED driving chip (14), and quantum dot light-emitting units (11) distributed in an array mode are arranged in a glass machine body (12).
2. The full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation according to claim 1, characterized in that: the quantum dot light-emitting unit (11) is generated by direct writing induction of ultrafast laser inside the glass body (12).
3. The full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation according to claim 1, characterized in that: each quantum dot light-emitting unit (11) in the glass body (12) has different light-emitting wavelengths.
4. The full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation according to claim 1, characterized in that:
the laser parameters of the ultrashort pulse laser (1) are adjustable, and the laser parameters comprise pulse width, repetition frequency and pulse energy.
5. The full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation according to claim 1, characterized in that: the number of the Micro-LED light-emitting devices (13) is the same as that of the quantum dot light-emitting units (11) in the glass machine body (12), and the Micro-LED light-emitting devices correspond to the quantum dot light-emitting units (11) in the glass machine body (12) one by one, so that the array distribution of the Micro-LED light-emitting devices (13) is completely the same as that of the quantum dot light-emitting units (11) in the glass machine body (12), and one Micro-LED light-emitting device (13) is arranged below one quantum dot light-emitting unit (11).
6. The full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation according to claim 1, characterized in that: the Micro-LED driving chip (14) drives the Micro-LED light-emitting device (13) to excite the quantum dot light-emitting unit (11) to emit light with the wavelength of the Micro-LED light-emitting device, and the quantum dot light-emitting units (11) with different wavelengths emit light and then display color on the glass body (12).
7. The full-color Micro-LED display device based on laser-induced glass internal quantum dot precipitation according to claim 1, characterized in that: the display dots of the full-color Micro-LED display device are formed by a plurality of quantum dot light-emitting units (11) which are arranged together in an adjacent array mode, and are used as basic display units, the light-emitting wavelengths of the quantum dot light-emitting units (11) in the display dots are the same, and the light-emitting wavelengths of different display dots are different.
8. The laser process preparation method applied to the full-color Micro-LED display device of any one of claims 1 to 6 is characterized in that:
firstly, quantum dots are generated by directly writing and inducing ultrafast laser in a glass machine body, and the quantum dots with different light-emitting wavelengths are generated by adjusting laser parameters of the ultrafast laser in different areas in the glass machine body, so that a full-color Micro-LED pixel dot array for displaying is formed in the glass machine body;
then, the Micro-LED light-emitting device array is electrically connected to a Micro-LED driving chip (14);
then, the glass body is placed on the array of Micro-LED light-emitting devices, so that the array distribution of the Micro-LED light-emitting devices (13) is identical to the array distribution of the quantum dot light-emitting units (11) in the glass body (12), and one Micro-LED light-emitting device (13) is arranged below one quantum dot light-emitting unit (11).
9. The laser process preparation method according to claim 8, characterized in that: the laser beam of the ultrafast laser is a laser beam with Gaussian distribution, and the laser beam with Gaussian distribution is shaped into a vortex beam and a Bessel beam through the beam.
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| CN114256402A (en) * | 2021-12-18 | 2022-03-29 | 武汉理工大学 | Array and Micro-LED device for display |
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| CN102633437A (en) * | 2012-04-24 | 2012-08-15 | 浙江大学 | Multi-color visible light emitting transparent microcrystalline glass material and method for preparing same |
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| CN113380775B (en) | 2023-12-05 |
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