CN113346000A - Preparation method of quantum dot color conversion layer - Google Patents
Preparation method of quantum dot color conversion layer Download PDFInfo
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- CN113346000A CN113346000A CN202110605492.7A CN202110605492A CN113346000A CN 113346000 A CN113346000 A CN 113346000A CN 202110605492 A CN202110605492 A CN 202110605492A CN 113346000 A CN113346000 A CN 113346000A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 146
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 46
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- 239000011248 coating agent Substances 0.000 claims abstract description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
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- 238000007731 hot pressing Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- -1 acryl Chemical group 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
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- 239000004593 Epoxy Substances 0.000 claims 1
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- 239000002699 waste material Substances 0.000 abstract description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a preparation method of a quantum dot color conversion layer, which comprises the following steps: s1, preparing a groove on the transparent substrate; s2, coating a quantum dot solution on the transparent substrate, and enabling the quantum dot solution to fill the grooves based on the liquidity of the liquid; s3, solidifying the quantum dot solution into a quantum dot layer; s4, removing the quantum dot layer on the surface of the transparent substrate to enable the quantum dot layer remained in the groove to become independent quantum dots; s5, repeating the steps S1-S4 to prepare quantum dots with different colors, and forming the quantum dot color conversion layer. The preparation method has the advantages of simple process, simple and convenient operation and low cost, can realize the preparation of the color conversion layer of the pixel with the small size of less than 10 mu m, does not dope a photoresist, does not reduce the conversion efficiency due to the degradation of the quantum dots, and avoids the waste of the quantum dots.
Description
Technical Field
The invention relates to the technical field of Micro LEDs, in particular to a preparation method of a quantum dot color conversion layer.
Background
Micro LED display is known as the next generation display technology following LEDs and OLEDs. The practical application of Micro LED technology is limited due to the bottleneck problem of the fabrication process. The blue LED is used as an excitation light source and a quantum dot color conversion layer to realize full-color display, and the method is an effective technical route. At present, two methods of ink-jet printing and photoresist doping patterning are mainly used for preparing the quantum dot color conversion layer with high density and micro-pixel size. The ink jet printing method can realize the preparation of the color conversion layer with the minimum pixel size of about 30 μm, and when the pixel size is further reduced, the ink jet printing method cannot meet the requirement. Although the photoresist doping patterning method can realize the preparation of the color conversion layer of the small-size pixel with the size of less than 10 microns, the doped photoresist easily degrades the quantum dots, reduces the conversion efficiency of the quantum dots and causes a great deal of quantum dot waste.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a preparation method of a quantum dot color conversion layer, which can realize the preparation of a color conversion layer of pixels with small size of below 10 mu m without reducing the conversion efficiency.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the preparation method of the quantum dot color conversion layer provided by the invention comprises the following steps:
s1, preparing a groove on the transparent substrate;
s2, coating a quantum dot solution on the transparent substrate, and enabling the quantum dot solution to fill the grooves based on the liquidity of the liquid;
s3, solidifying the quantum dot solution into a quantum dot layer;
s4, removing the quantum dot layer on the surface of the transparent substrate to enable the quantum dot layer remained in the groove to become independent quantum dots;
s5, repeating the steps S1-S4 to prepare quantum dots with different colors, and forming the quantum dot color conversion layer.
Preferably, in step S1, the grooves are formed on the transparent substrate by photolithography, etching, laser processing, mechanical drilling, hot pressing, or electric spark.
Preferably, in step S2, the liquid component of the quantum dot solution is a silica gel, an epoxy resin, an ultraviolet curing adhesive or a thermal curing adhesive.
Preferably, in step S3, the quantum dot solution is cured by standing, heating or ultraviolet light irradiation.
Preferably, in step S4, the quantum dot layer is removed by grinding, laser cleaning or ion beam polishing.
Preferably, in step S2, the quantum dot solution is applied by spin coating or spray coating.
Preferably, in step S1, the transparent substrate is glass, acryl plate, or quartz.
The invention can obtain the following technical effects:
the preparation method has the advantages of simple process, simple and convenient operation and low cost, can realize the preparation of the color conversion layer of the pixel with the small size of less than 10 mu m, does not dope a photoresist, does not reduce the conversion efficiency due to the degradation of the quantum dots, and avoids the waste of the quantum dots.
Drawings
FIG. 1 is a schematic flow diagram of a method of making a quantum dot color conversion layer provided in accordance with the present invention;
fig. 2 is a schematic view of a process for preparing a quantum dot color conversion layer according to embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of a micro led display device provided in embodiment 2 of the present invention.
Wherein the reference numerals include: the LED chip comprises a transparent substrate 1, grooves 1-1, a red quantum dot solution 2, a red quantum dot layer 2-1, red quantum dots 2-2, a green quantum dot solution 3, a green quantum dot layer 3-1, green quantum dots 3-2, empty dot positions 4, a MicroLED array 5, a driving substrate 5-1 and blue LED core particles 5-2.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
The method for preparing the quantum dot color conversion layer can prepare the quantum dot color conversion layer which is converted into one color (such as any one of red, green and blue) in full colors, can prepare the quantum dot color conversion layer which is converted into the quantum dot color conversion layer of any two colors (such as red and green, red and blue and green and blue) in full colors, and can prepare the quantum dot color conversion layer which is converted into the full colors (red, green and blue).
Fig. 1 shows a flow of a method for preparing a quantum dot color conversion layer according to the present invention.
As shown in fig. 1, the method for preparing a quantum dot color conversion layer provided by the invention comprises the following steps:
s1, preparing grooves on the transparent substrate.
The transparent substrate can be hard transparent materials such as glass, acrylic plates, quartz and the like.
The grooves prepared on the surface of the transparent substrate are used for storing quantum dot solution and are used as quantum dot positions for forming quantum dots after solidification, the quantum dot solution forms unbroken quantum dots after solidification, and the number of the grooves is determined according to the number of the quantum dots required.
The preparation method of the groove can be processes such as photoetching, etching, laser processing, mechanical drilling, hot pressing, electric spark and the like, and the invention is not limited to the processes. The size of the grooves is set according to the size of the display pixels.
And S2, coating the quantum dot solution on the transparent substrate, and enabling the quantum dot solution to fill the grooves based on the liquidity of the liquid.
The quantum dot solution coated on the surface of the transparent substrate can completely cover all the grooves on the transparent substrate, so that each groove is stored with the quantum dot solution.
The quantum dot solution can be applied by spin coating or spray coating.
The quantum dot solution forms a plane on the surface of the transparent substrate under the action of gravity, and the quantum dot solution forms a plane on the surface of the transparent substrate in two purposes, namely, a quantum dot layer is formed on the surface of the transparent substrate after the quantum dot solution is solidified, so that the situation that the quantum dot layer is not filled with grooves is avoided, and the planar quantum dot layer is convenient to grind and polish.
And S3, solidifying the quantum dot solution into a quantum dot layer.
The liquid of the quantum dot solution can be silica gel, epoxy resin, ultraviolet curing glue, heat curing glue and other components. The quantum dot solution may be cured by standing, heating, or ultraviolet irradiation.
And S4, removing the quantum dot layer on the surface of the transparent substrate to make the quantum dot layer remained in the groove become independent quantum dots.
One groove corresponds to one quantum dot, and the invention finally wants the quantum dots which are independent from one another among the quantum dots, so that the quantum dot layers except the quantum dot layer in the groove are redundant, namely the quantum dot layer on the surface of the transparent substrate needs to be removed.
The quantum dot layer can be removed by grinding, laser cleaning or ion beam polishing.
After the quantum dot layer on the surface of the transparent substrate is removed, the quantum dot layer in each groove forms independent quantum dots, and the light emitted by the LED is converted into the same color. At this time, the preparation of one kind of quantum dots in the quantum dot color conversion layer is completed.
S5, repeating the steps S1-S4 to prepare quantum dots with different colors, and forming the quantum dot color conversion layer.
And repeating the steps S1-S4 to prepare the quantum dots converted into different colors, and finally forming the quantum dot color conversion layer.
The following describes in detail a method for manufacturing a quantum dot color conversion layer according to the present invention, taking the preparation of a quantum dot color conversion layer that converts two colors as an example.
Example 1
Fig. 2 illustrates a process of preparing a quantum dot color conversion layer provided according to embodiment 1 of the present invention.
As shown in fig. 2, a process for preparing a quantum dot color conversion layer according to embodiment 1 of the present invention includes the following steps:
s1, preparing first grooves 1-1 which are arranged at equal intervals on the transparent substrate 1.
And S2, coating the red quantum dot solution 2 on the transparent substrate 1.
Based on the liquidity of the liquid, the red quantum dot solution 2 is filled in the first groove 1-1, and a plane is formed on the surface of the transparent substrate 1 under the action of gravity.
And S3, solidifying the red quantum dot solution 2 into a red quantum dot layer 2-1.
And S4, removing the red quantum dot layer 2-1 on the surface of the transparent substrate 1 to enable the red quantum dot layer 2-1 remaining in the first groove 1-1 to become independent red quantum dots 2-2.
The red quantum dots 2-2 are used to convert blue light into red light.
S5, preparing second grooves 1-2 which are arranged at equal intervals on the transparent substrate 1.
And S6, coating the green quantum dot solution 3 on the transparent substrate 1.
Based on the fluidity of the liquid, the green quantum dot solution 3 is filled in the second groove 1-2, and a plane is formed on the surface of the transparent substrate 1 under the action of gravity.
And S7, solidifying the green quantum dot solution 3 into a green quantum dot layer 3-1.
S8, removing the green quantum dot layer 3-1 on the surface of the transparent substrate 1, so that the green quantum dot layer 3-1 remaining in the second groove 1-2 becomes an independent green quantum dot 3-2.
The green quantum dots 3-2 are used to convert blue light into green light.
The quantum dot color conversion layer having the red quantum dots and the green quantum dots is prepared through the above-described S1 to S8.
The preparation method has the advantages of simple process, simplicity and convenience in operation and low cost, can be used for preparing the quantum dot color conversion layer of the pixel with the small size of less than 10 microns, does not dope a photoresist, cannot reduce the conversion efficiency due to the degradation of the quantum dots, and avoids the waste of the quantum dots.
Example 2
Fig. 3 shows a structure of a micro led display device provided according to embodiment 2 of the present invention.
As shown in fig. 3, the micro LED display device provided in embodiment 2 of the present invention includes a micro LED array 5 and a quantum dot color conversion layer 6, where the quantum dot color conversion layer 6 includes a plurality of quantum dot positions, a red quantum dot 2-2 and a green quantum dot 3-2 are prepared in each quantum dot position, and the empty quantum dot position is an empty dot position 4 to form a transmission region, the micro LED array includes a driving substrate 5-1 and a blue LED core particle 5-2 prepared on the driving substrate 5-1, one blue LED core particle 5-2 corresponds to one quantum dot position, the micro LED array 5 and the quantum dot color conversion layer 6 are aligned and bonded, and blue light emitted by the blue LED core particle 5-2 is converted into red light by the red quantum dot 2-2, is converted into green light by the green quantum dot 3-2, and is transmitted by the empty dot position 4 to maintain an original color.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (7)
1. A preparation method of a quantum dot color conversion layer is characterized by comprising the following steps:
s1, preparing a groove on the transparent substrate;
s2, coating a quantum dot solution on the transparent substrate, and enabling the quantum dot solution to fill the groove based on the liquidity of the liquid;
s3, solidifying the quantum dot solution into a quantum dot layer;
s4, removing the quantum dot layer on the surface of the transparent substrate to enable the quantum dot layer remained in the groove to become independent quantum dots;
s5, repeating the steps S1-S4 to prepare quantum dots with different colors, and forming the quantum dot color conversion layer.
2. The method of preparing a quantum dot color conversion layer according to claim 1, wherein in step S1, a groove is prepared on the transparent substrate by photolithography, etching, laser processing, mechanical drilling, hot pressing, or electric discharge.
3. The method of claim 1, wherein in step S2, the liquid component of the quantum dot solution is a silicone, an epoxy, an ultraviolet curing adhesive, or a thermal curing adhesive.
4. The method of claim 1, wherein in step S3, the quantum dot solution is cured by standing, heating or uv irradiation.
5. The method for preparing a quantum dot color conversion layer according to claim 1, wherein in step S4, the quantum dot layer is removed by grinding, laser cleaning or ion beam polishing.
6. The method of claim 1, wherein in step S2, the quantum dot solution is applied by spin coating or spray coating.
7. The method of claim 1, wherein in step S1, the transparent substrate is glass, acryl plate or quartz.
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| CN202110605492.7A CN113346000A (en) | 2021-05-31 | 2021-05-31 | Preparation method of quantum dot color conversion layer |
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| CN202110605492.7A CN113346000A (en) | 2021-05-31 | 2021-05-31 | Preparation method of quantum dot color conversion layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114709319A (en) * | 2022-04-11 | 2022-07-05 | 东莞市中麒光电技术有限公司 | Color conversion structure manufacturing method, color conversion structure, crystal grain manufacturing method and crystal grain |
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| CN108321170A (en) * | 2018-01-16 | 2018-07-24 | 南方科技大学 | Method for manufacturing high-efficiency light conversion color display pixel film |
| CN109888082A (en) * | 2019-01-25 | 2019-06-14 | 山东省科学院激光研究所 | A kind of white light-emitting diode chip and preparation method thereof |
| CN109979960A (en) * | 2019-04-26 | 2019-07-05 | 中国科学院长春光学精密机械与物理研究所 | The production method of full-color Micro-LED display device based on quantum dot light conversion layer |
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- 2021-05-31 CN CN202110605492.7A patent/CN113346000A/en active Pending
Patent Citations (5)
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| CN107004737A (en) * | 2014-11-28 | 2017-08-01 | Seoul大学校 | A kind of quantum dot electronic equipment and quantum dot printing transferring method |
| CN108321170A (en) * | 2018-01-16 | 2018-07-24 | 南方科技大学 | Method for manufacturing high-efficiency light conversion color display pixel film |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
| CN109888082A (en) * | 2019-01-25 | 2019-06-14 | 山东省科学院激光研究所 | A kind of white light-emitting diode chip and preparation method thereof |
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| CN114709319A (en) * | 2022-04-11 | 2022-07-05 | 东莞市中麒光电技术有限公司 | Color conversion structure manufacturing method, color conversion structure, crystal grain manufacturing method and crystal grain |
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Application publication date: 20210903 |