CN110364611A - Packaging structure based on quantum dots and display - Google Patents
Packaging structure based on quantum dots and display Download PDFInfo
- Publication number
- CN110364611A CN110364611A CN201910525800.8A CN201910525800A CN110364611A CN 110364611 A CN110364611 A CN 110364611A CN 201910525800 A CN201910525800 A CN 201910525800A CN 110364611 A CN110364611 A CN 110364611A
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- Prior art keywords
- quantum dot
- chip
- slot
- quantum
- photoresist layer
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 99
- 238000004806 packaging method and process Methods 0.000 title abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 59
- 238000001179 sorption measurement Methods 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000005083 Zinc sulfide Substances 0.000 claims description 9
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 9
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 6
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229920003986 novolac Polymers 0.000 claims description 2
- -1 perovskite Chemical compound 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 21
- 239000012530 fluid Substances 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- 241001252483 Kalimeris Species 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229920005439 Perspex® Polymers 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 241000208199 Buxus sempervirens Species 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 210000005239 tubule Anatomy 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to the technical field of packaging, and provides a quantum dot-based packaging structure which comprises a lamp source plate, a plurality of chips arranged on the lamp source plate, quantum dots and a photoresist layer with adsorption force on the quantum dots, wherein the photoresist layer is arranged on the light emitting side of each chip, a plurality of through grooves are arranged on the photoresist layer, the through grooves are arranged in one-to-one correspondence with the chips, the top ends of the chips are connected with the bottom ends of the through grooves and seal the bottom ends of the through grooves, and the quantum dots are coated on the top ends of the chips and are accommodated in the through grooves. The invention also provides a display comprising a quantum dot based packaging structure. Through set up the photoresist layer that has logical groove on the chip, the chip sets up with logical groove one-to-one, and the chip top is connected and sealed logical groove bottom for the fluid power of quantum dot self can be balanced effectively to the adsorption affinity of the lateral wall that leads to the groove, thereby eliminate the coffee ring effect, make the quantum dot that leads to the inslot distribute more evenly, thereby realize even colour and show.
Description
Technical field
The present invention relates to encapsulation technology fields, especially provide a kind of encapsulating structure and display based on quantum dot.
Background technique
Micro LED has higher as display technology of new generation for traditional LCD (liquid crystal) and OLED
Color saturation and luminous efficiency is more preferable, it is low in energy consumption.Usually there are two types of schemes for the display of Micro LED, wherein the first be
RGB (RGB) three-color LED unit is combined on panel, right driving circuit is complex, and manufacture is more difficult, and red, green and blue LED
Operating voltage it is different, rate of decay is also different, and reliability is told somebody what one's real intentions are；It is for second the Micro LED at usually less than 50 microns
Inkjet printing light conversion material on chip generates redgreenblue light by excitation light conversion material, to realize true color
Display, wherein light conversion material generallys use quanta point material.
However, quantum dot solvent can form drop on Micro LED, simultaneously during printing ink-jet quantum dot
Be accompanied by the volatilization of quantum dot solvent, due to the effect of the fluid forces such as kalimeris Ge Nili and capillary force, quantum dot solvent to
Two sides are mobile, are easy to produce coffee ring effect, the schematic diagram of the coffee ring effect gone out as shown in Figures 1 and 2, specially quantum dot
Cause in the coffee ring of peripheral annular, the distribution of intermediate void or other shapes so that the distribution of quantum dot is very uneven
The display of color is very uneven.
Summary of the invention
The purpose of the present invention is to provide a kind of encapsulating structure and display based on quantum dot, it is intended to solve the prior art
In, quantum dot, which is easy to produce coffee ring effect when on Micro LED in inkjet printing, causes color to show non-uniform technology
Problem.
To solve the above problems, the embodiment of the invention provides a kind of encapsulating structure based on quantum dot, including lamp source plate
And multiple chips on the lamp source plate are set, further include quantum dot and there is the photoresist of adsorption capacity to the quantum dot
Layer, the photoresist layer be set to each chip light emission side, the photoresist layer be equipped with multiple through slots, each through slot with
Each chip is arranged in a one-to-one correspondence, and the chip top connect with the through slot bottom end and seal the through slot bottom end, described
Quantum dot, which applies, to be set to the chip top and is placed in the through slot.
Further, each through slot is set as cuboid, terrace with edge, cone or hemisphere, and in the through slot top
Diameter is greater than or equal to through slot bottom end internal diameter.
Preferably, the longitudinal section of each through slot is trapezoidal, and the tilt angle on the trapezoidal waist and vertical direction is
0 ° to 90 °.
Further, the photoresist layer is set as perspex layer, polydimethylglutarimide layer or phenolic resin
Layer.
Further, the chip is set as blue light Micro LED chip, and the quantum dot includes green light quantum point, red
Light quanta point and blue light quantum point, the through slot include red light district, green Region and blue light region, and the red light quantum point, which applies, is set to institute
It states on the chip of red light district, the green light quantum point, which applies, to be set on the chip of the green Region, the blue light quantum
Spot printing is set on the chip of the blue light region, and the light emission side of the red light district and the green Region is equipped with reflecting grating, institute
Reflecting grating is stated for reflecting the blue light of the red light district and the green Region.
Further, the quantum dot is set as cadmium selenide, perovskite, cadmium telluride, zinc oxide, zinc sulfide crystal, selenizing
One of zinc crystal and lead telluride are a variety of.
Further, the green light quantum point in the green Region is set as zinc selenide crystal, cadmium selenide, in zinc sulfide crystal
It is one or more.
Further, the red light quantum point in the red light district is set as one of cadmium selenide, zinc sulfide crystal or two
Kind.
Further, the manufacture craft of the photoresist layer is as follows:
The spin coating photoresist on substrate；
The mask film covering plate on the photoresist；
Mask plate described in ultraviolet light irradiation；
Mask plate described in etching processing obtains the photoresist layer.
The beneficial effect of encapsulating structure provided by the invention based on quantum dot is: compared with prior art, the present invention
By the way that the photoresist layer with through slot is arranged on chip, and the photoresist layer has adsorption capacity, between chip and through slot one by one
It is correspondingly arranged, and chip top connect with through slot bottom end and seal through slot bottom end, is set to chip top so that quantum dot applies and holds
It is placed in through slot, the adsorption capacity of the side wall of through slot can effectively balance the fluid force of quantum dot itself, to eliminate quantum dot
The coffee ring effect formed when volatilization, so that the quantum dot in through slot is distributed more uniformly across on chip, to realize uniform
Color show；And structure is simple, and photoresist layer is arranged on chip, easy to operate, cost is relatively low.
The embodiment of the invention also provides a kind of displays, including the above-mentioned encapsulating structure based on quantum dot.
Display provided by the invention, by using the above-mentioned setting to the encapsulating structure based on quantum dot, the side of through slot
The adsorption capacity of wall can effectively balance the fluid force of quantum dot itself, to eliminate the coffee ring effect formed when quantum dot volatilization
It answers, so that quantum dot is distributed more uniformly across on chip, to realize that the color on display can more uniformly be shown；
And structure is simple, and photoresist layer is arranged on chip, easy to operate, monitor overall processing cost is lower.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the distribution map one of quantum dot in coffee ring effect provided in an embodiment of the present invention；
Fig. 2 is the distribution map two of quantum dot in coffee ring effect provided in an embodiment of the present invention；
Fig. 3 is the schematic diagram of the encapsulating structure of the encapsulating structure provided in an embodiment of the present invention based on quantum dot；
Fig. 4 is the structural representation of the photoresist layer and chip of the encapsulating structure provided in an embodiment of the present invention based on quantum dot
Figure；
Fig. 5 is the top view of Fig. 4；
Fig. 6 is the cross-sectional view one of Fig. 4；
Fig. 7 is the cross-sectional view two of Fig. 4；
Fig. 8 is the cross-sectional view three of Fig. 4.
Wherein, each appended drawing reference in figure:
100- encapsulating structure；1- lamp source plate/aluminum substrate；2- receiving panel；3- chip；4- photoresist layer；5- reflecting grating；
6- quantum dot；41- box dam；42- through slot；61- green light quantum point；62- red light quantum point；The blue light region 421-；The red light district 422-；
The green Region 423-；A- tilt angle.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " length ", " width ", "upper", "lower", "front", "rear",
The orientation or positional relationship of the instructions such as "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside" is based on attached drawing institute
The orientation or positional relationship shown, is merely for convenience of description of the present invention and simplification of the description, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to limit of the invention
System.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements.It for the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
Also referring to Fig. 1 to Fig. 8, the encapsulating structure 100 provided in an embodiment of the present invention based on quantum dot includes lamp source
Plate 1, chip 3, quantum dot 6 and photoresist layer 4, be applied to encapsulation technology field, solve in the prior art quantum dot 6 in ink-jet
Coffee ring effect is easy to produce when printing on Micro LED causes color to show non-uniform technical problem.
Specifically, also referring to Fig. 3 to Fig. 8, in the present embodiment, multiple chips 3 are set, chip 3 is arranged on lamp source plate 1
In the inside of lamp source plate 1.Photoresist layer 4 has adsorption capacity and the light emission side of each chip 3 is arranged in, i.e. chip deviates from lamp source plate
1 side, photoresist layer 4 are equipped with multiple through slots 42, and each chip 3 is arranged in a one-to-one correspondence with through slot 42, the top of each chip 3 and
The bottom end of through slot 42 connects and seals the bottom end of through slot 42, is offset in through slot 42 by the adsorption capacity of the side wall of through slot 42
Quantum dot 6 itself fluid force to eliminating coffee effect so that the quantum dot 6 in through slot 42 is uniformly distributed on chip 3,
Realize the display of true color.
In the embodiment of the present invention, by the way that the photoresist layer 4 with through slot 42 is arranged on chip 3, and the photoresist layer 4 has
There is adsorption capacity, be arranged in a one-to-one correspondence between chip 3 and through slot 42, and 3 top of chip connect with 42 bottom end of through slot and seals through slot
42 bottom ends are set to 3 top of chip and are placed in through slot 42 so that quantum dot 6 applies, and the adsorption capacity of the side wall of through slot 42 can have
The fluid force of effect ground aequum point 6 itself, so that the coffee ring effect formed when quantum dot 6 volatilizees is eliminated, so that each logical
Quantum dot 6 in slot 42 is distributed more uniformly across on chip 3, to realize that uniform color is shown；And structure is simple, is
Photoresist layer 4 is set on chip 3, and easy to operate, cost is relatively low.
Specifically, in the present embodiment, 6 solvent droplets of quantum dot, which apply to be located on chip 3 after volatilizing, forms coffee ring effect
The reason of be, it is very fast that the irregular shape of 6 droplet profile of quantum dot on chip 3 will lead to drop edge evaporation rate, due to hair
The effect of tubule power is so that drop realizes supplement towards edge flowing, and there is also kalimeris dagger-axe Buddhist nun's circulation, the rings for droplet surface
It flows and is flowed towards the surface tension larger part of drop, and under natural conditions, edge surface tension is larger, then is formed from centre to side
The kalimeris Ge Nili of edge, so that 6 solvent of quantum dot forms the distribution of coffee ring.Due to the influence of the adsorption capacity of photoresist layer 4, quantum
The surface tension of 6 solvents of point changes, so that kalimeris Ge Nili cancels out each other with capillary force, to realize that quantum dot 6 is molten
Agent is uniformly distributed.Wherein, 6 solvent of quantum dot surface tension be easy by the density of 6 drop of quantum dot, surface area size and
The influence of pressure etc. and change.
Specifically, quantum dot 6 is usually a kind of nano particle being made of II-VI group or iii-v element.Wherein,
The partial size of quantum dot 6 is typically in the range of between 1~10nm, the micro display field suitable for small size.Quantum dot 6 also has electroluminescent hair
The effect of light and luminescence generated by light can emit special wavelength light after being excited, and luminescent color is determined by material and size, therefore can
Change the luminous wavelength of its difference by regulation 6 particle size of quantum dot.When 6 partial size of quantum dot is smaller, luminescent color is more inclined
Blue；When quantum dot 6 is bigger, luminescent color is more red.Quantum dot 6 chemical component multiplicity, luminescent color can cover from
Blue light is to the entire visual field of feux rouges.And there are the spies such as very high light conversion efficiency, very narrow half-peak breadth, wide absorption spectrum
Property, therefore possess very high excitation purity and saturation degree.
Specifically, in the present embodiment, quantum dot 6 is coated with to chip 3 by way of spin coating or spraying, certainly, may be used also
In a manner of being set as other.
Specifically, in the present embodiment, photoresist layer 4 with a thickness of 100 μm or so, and the thickness of photoresist layer 4 be higher than amount
The thickness of son point 6, the i.e. height of through slot 42 are 100 μm or so and the depth of through slot 42 is greater than the thickness of quantum dot 6, are convenient for photoetching
The adsorption capacity of glue-line 4 sufficiently offsets fluid force when distributing of quantum dot 6.In addition, photoresist layer 4 directly overlays on chip 3.
Also referring to Fig. 1 to Fig. 3, in the present embodiment, photoresist layer 4 is divided into multiple interconnected by multiple through slots
Box dam 41, the adsorption capacity of the side wall of box dam 41 offset the fluid force of quantum dot 6 itself to eliminate coffee effect.
Specifically, referring to Fig. 3, when inkjet printing quantum dot 6,6 solvent of quantum dot is distributed to the chip 3 on lamp source plate 1
On, lamp source plate 1 is to be arranged on the circuit board of display, and chip 3 is electrically connected to the circuit board, and the driving current of circuit board is driven
The dynamic chip 3 with quantum dot 6 emits beam.
Specifically, referring to Fig. 3, in the present embodiment, which further includes receiving panel 2, is the reception of light
The top side of photoresist layer 4 is arranged in panel 2, will completely show on the chip 3 with coloured light.
Specifically, referring to Fig. 4, in the present embodiment, each chip 3 is carried on the back away from the setting of one end of lamp source plate 1 in photoresist layer 4
On side from receiving panel 2, and chip 3 is also correspondingly connected to the bottom end of each through slot 42 and is used to connect the bottom end of through slot 42
Opening, so that being tightly connected between chip 3 and through slot 42.The inner sidewall of the through slot 42 is the lateral wall of box dam 41, and quantum dot 6 is waved
When hair, the adsorption capacity of the lateral wall of box dam 41 can be used in balancing the kalimeris Ge Nili and capillary force of quantum dot 6 itself, offset
The effect of coffee ring effect enables quantum dot 6 uniformly to penetrate into in through slot 42 and being located on chip 3, therefore, realizes face
The uniform display of color.
Optionally, also referring to Fig. 3 to Fig. 8, in the present embodiment, each through slot 42 is set as cuboid, terrace with edge, cone
Or hemisphere, and the internal diameter on the top of through slot 42 is greater than or equal to the internal diameter of the bottom end of through slot 42, so that the inner sidewall of through slot 42
It can be the lateral wall of box dam 41, the suction of the inner sidewall of through slot 42 towards the direction of 6 spin coating of quantum dot, the inner sidewall of the through slot 42
Attached power can offset the fluid force of quantum dot 6 itself, the flow direction of quantum dot 6 be limited, so that quantum dot 6 is uniformly distributed in core
On piece 3, the uniform display of color is realized.Wherein, Fig. 3 and Fig. 7 is please referred to, which is set as cuboid, i.e. box dam 41 is set
It is set to cuboid；Referring to Figure 4 together to Fig. 6, in the present embodiment, which is set as inverted terrace with edge, and the box dam 41 is right
It should be set as terrace with edge.
Preferably, referring to Figure 4 together to Fig. 8, as the preferred embodiment of the present embodiment, each through slot 42
Longitudinal section be it is trapezoidal, i.e. through slot 42 is set as terrace with edge, and trapezoidal waist is inclined outwardly setting from lower to upper, and trapezoidal waist with vertically
Tilt angle on direction is A, i.e. the longitudinal section of through slot 42 is set as inverted trapezoidal, and inclination angle is set as A, and A is
60°.Correspondingly, box dam 41 is also configured as terrace with edge, the longitudinal section of box dam 41 is set as trapezoidal, and the close chip 3 one of box dam 41
The outer diameter at end is greater than the outer diameter of 2 one end of close receiving panel of box dam 41, i.e. the outer diameter of the bottom end of box dam 41 is pushed up greater than box dam 41
The outer diameter at end, the angle between the bottom surface and waist of the longitudinal section of box dam 41 are set as 30 °.
In the present embodiment, when chip 3 outer diameter it is in the same size, i.e. when the size of the internal diameter of the bottom of through slot 42 is constant,
The inclination angle A of the inner sidewall of through slot 42 is bigger, i.e., the angle between the bottom surface and side of the longitudinal section of box dam 41 is smaller, then through slot
The internal diameter of one end of 42 close receiving panel 2 is then bigger, therefore, when the thickness of chip 3 is constant, direction on the inside of through slot 42
Quantum dot 6 when volatilization it is then bigger towards area, the adsorption capacity of the inner sidewall of through slot 42 can more comprehensively offset quantum
The fluid force of point 6, preferably to offset coffee ring effect when quantum dot 6 is distributed, uniform color is shown.
Optionally, in the present embodiment, the longitudinal section of through slot 42 is trapezoidal, the inclination angle on trapezoidal waist and vertical direction
A is 0 ° to 90 °, may be arranged as 0 °, 15 °, 20 °, 30 ° or 45 ° or other angular dimensions.Wherein, as shown in fig. 7,
When inclination angle A is 20 °, the angle between the bottom surface and waist of the middle section of box dam 41 is 70 °；As described in Figure 8, as inclination angle A
When being 0 °, the longitudinal section of through slot 42 is rectangle or square, i.e., through slot 42 is set as cuboid or square, correspondingly, enclosing
The longitudinal section on dam 41 is also rectangle or square setting.At this point, inclination angle A is optimal scheme when being 60 °.
Further, in this embodiment photoresist layer 4 be set as perspex layer (PMMA, polymethyl methacrylate),
Polydimethylglutarimide layer or novolac resin layer (DNQ), conducive to the adsorption capacity for realizing box dam 41, certainly, herein for light
The material of photoresist layer 4 does not do unique restriction.
Further, also referring to Fig. 3 to Fig. 6, in the present embodiment, chip 3 is set as blue light Micro LED chip 3,
As monochromatic light LED chip 3, for size between 10 microns to 100 microns, driving current can directly drive blue light Micro
LED chip 3 issues blue light.Wherein, blue light Micro LED chip 3 is equipped with N-type and is partly led by Sapphire Substrate, Sapphire Substrate
Body layer (N-type GaN layer), p type semiconductor layer (p-type GaN layer), N-type metal electrode (N-type ITO electrode) and p-type metal electrode (P
Type ITO electrode).
Specifically, quantum dot 6 includes green light quantum point 616, red light quantum point 626 and blue light quantum point, and through slot 42 includes
Photoresist layer 4 is also divided into red light district 422, green light by red light district 422, green Region 423 and blue light region 421, i.e., multiple box dams 41
Area 423 and blue light region 421.Wherein, green light quantum point 616, red light quantum point 626 and blue light quantum point spin coating or it is sprayed into photoetching
Each through slot 42 in glue-line 4, and corresponding in each blue light Micro LED chip 3, the distribution of green light quantum point 616 to through slot 42
It is interior so that the through slot 42 forms green Region 423, the distribution of red light quantum point 626 in through slot 42 so that the through slot 42 forms red light district
422, that is to say, that red light quantum point 626 is distributed on the chip 3 of red light district 422, and green light quantum point 616 is distributed in green Region
On 423 chip 3.Blue light quantum point apply be set to blue light region 421 chip 3 on, that is to say, that blue light Micro LED chip 3 by
Sapphire Substrate, the existing blue light quantum point in inside, can directly issue blue light under the driving of electric current, wherein green light quantum point 616,
Red light quantum point 626, which does not apply, to be set in blue light region 421.Under the driving of driving current, blue light Micro LED chip 3 is combined
Corresponding green light quantum point 616 can issue green light, and blue light Micro LED chip 3 combines corresponding red light quantum point 626 can
Feux rouges is issued, blue light Micro LED chip 3 can directly issue blue light, therefore can realize the hair of red, green, basket light respectively
It penetrates, receiving panel 2 receives light, realizes the display of color.
Preferably, referring to Fig. 3, in the present embodiment, reflecting grating 5 is additionally provided between chip 3 and receiving panel 2, this is anti-
It penetrates grating 5 to be located between red light district 422 and the side and receiving panel 2 of green Region 423, i.e., reflecting grating 5 is set to red light district 422
And the light emission side of green Region 423, for reflecting the blue light of red light district 422 and green Region 423.Specifically, red light district 422 and green light
Blue light in area 423 is reflected by reflecting grating 5, can not be sent to receiving panel 2, and feux rouges and green light are normal through reflecting grating
5 are sent to receiving panel 2, and the blue light that blue light region 421 issues is sent directly in receiving panel 2, so that the face of the light on chip 3
Color can more completely be reflected into receiving panel 2, improve the display purity of color.
In the present embodiment, reflecting grating 5 is set as distributed bragg reflector mirror (DBR, distributed Bragg
Reflection), formed by being alternately arranged in the way of ABAB by alternate multilayer high refractive index and low-index material
Periodic structure, the optical thickness of every layer material are the 1/4 of center reflection wavelength.Therefore distributed bragg reflector mirror is one kind four
/ mono- wave multilayer system is equivalent to simple one group of photonic crystal.Due to frequency fall in the electromagnetic wave within the scope of energy gap without
Method penetrates, and the reflectivity of Bragg mirror is up to 99% or more.It is generally used in terms of promoting LED luminance, he does not have metal anti-
The absorption problem of mirror is penetrated, and energy gap position can be adjusted through the refractive index or thickness that change material.In the present embodiment, green light
And feux rouges can be by the reflecting grating, and blue light can not pass through, the reflectivity of Bragg mirror can up to 99% or more
The purity of color is improved, the brightness of Micro LED is improved.
Further, in this embodiment quantum dot 6 by cadmium selenide crystalline solid (CdSe), perovskite, cadmium telluride (CdTe),
One of zinc oxide (ZnO), zinc sulfide crystal (ZnS), zinc selenide crystal (ZnSe) and lead telluride (PbTe) or a variety of compositions.
Specifically, in the present embodiment, the green light quantum point 616 in green Region 423 is set as zinc selenide crystal (ZnSe), selenium
One of cadmium (CdSe), zinc sulfide crystal (ZnS) are a variety of.
Specifically, in the present embodiment, the red light quantum point 626 in red light district 422 is set as cadmium selenide (CdSe), zinc sulphide
One or both of crystal (ZnS).
Further, in this embodiment lamp source plate 1 is set as heat sink, it is a kind of with good scattered using aluminum substrate 1
The metal-based copper-clad plate of heat function, heating conduction are preferable.Wherein, when chip 3 works generated heat can quickly conduct to
It on aluminum substrate 1, is then transferred heat away from by aluminum substrate 1, to realize the heat dissipation to chip 3.
Further, in this embodiment the manufacture craft that photoresist layer 4 is formed specifically:
Spin coating photoresist on a substrate；
On a photoresist by prefabricated mask plate covering；
Photoresist is irradiated by ultraviolet light (UV) light；
Processing is performed etching by the photoresist after ultraviolet light irradiation, removal residual photoresist obtains photoresist layer 4.
In the present embodiment, etching processing is photoetching corrosion, including exposure-processed and cleaning photoresist, that is, first passes through photoetching
Photoresist is subjected to photolithographic exposure processing, the part removed needed for corrosion treatment is fallen is then realized otherwise, removes residual
Photoresist is stayed, photoresist layer 4 is obtained.
In the present embodiment, developing reaction then occurs for the photoresist for not having mask plate to cover after exposure-processed, on photoresist,
There is the place of mask plate not react, so that photoresist is divided into conformality and negative shape two parts, the photoetching of finally obtained conformality
Glue part is then the photoresist layer 4 in the present embodiment, which can be sheathed with one end away from lamp source plate 1 of chip 3
On circumferential position, i.e. the light emission side that is sheathed on chip 3 of photoresist layer 4, so that chip 3 is sealed in the through slot 42 on photoresist layer 4
Bottom end.It is worth noting that the inner sidewall of through slot 42 is the lateral wall of box dam 41, two through slots 42 being disposed adjacent are respectively set
In the two sides of a box dam 41.
The present invention also provides a kind of displays, including the encapsulating structure 100 based on quantum dot, encapsulating structure 100 with it is above-mentioned
The encapsulating structure 100 based on quantum dot it is identical, details are not described herein again.
Display in the embodiment of the present invention leads to by using the above-mentioned setting to the encapsulating structure 100 based on quantum dot
The adsorption capacity of the side wall of slot 42 can effectively balance the fluid force of quantum dot 6 itself, be formed to eliminate when quantum dot 6 volatilizees
Coffee ring effect so that quantum dot 6 is distributed more uniformly across on chip 3, to realize that the color on display can be more
Add and equably show, and improves the display brightness of display and the purity of color；And structure is simple, and photoetching is arranged on chip 3
Glue-line 4, easy to operate, monitor overall processing cost is lower.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of encapsulating structure based on quantum dot, special including lamp source plate and the multiple chips being arranged on the lamp source plate
Sign is, further includes quantum dot and has the photoresist layer of adsorption capacity to the quantum dot, the photoresist layer is set to each described
The light emission side of chip, the photoresist layer are equipped with multiple through slots, and each through slot is arranged in a one-to-one correspondence with each chip, institute
It states chip top and the through slot bottom end is connect and sealed with the through slot bottom end, the quantum dot, which applies, is set to the chip top simultaneously
It is placed in the through slot.
2. as described in claim 1 based on the encapsulating structure of quantum dot, which is characterized in that each through slot is set as rectangular
Body, terrace with edge, cone or hemisphere, and through slot top internal diameter is greater than or equal to through slot bottom end internal diameter.
3. as described in claim 1 based on the encapsulating structure of quantum dot, which is characterized in that the longitudinal section of each through slot is ladder
Shape, the tilt angle on the trapezoidal waist and vertical direction are 0 ° to 90 °.
4. as described in claim 1 based on the encapsulating structure of quantum dot, which is characterized in that the photoresist layer is set as organic
Glassy layer, polydimethylglutarimide layer or novolac resin layer.
5. the encapsulating structure according to any one of claims 1-4 based on quantum dot, which is characterized in that the chip is set as
Blue light Micro LED chip, the quantum dot include green light quantum point, red light quantum point and blue light quantum point, the through slot packet
Red light district, green Region and blue light region are included, the red light quantum point, which applies, to be set on the chip of the red light district, the green light amount
Sub- spot printing is set on the chip of the green Region, and the blue light quantum point, which applies, to be set on the chip of the blue light region,
The light emission side of the red light district and the green Region is equipped with reflecting grating, and the reflecting grating is for reflecting the red light district and institute
State the blue light of green Region.
6. as claimed in claim 5 based on the encapsulating structure of quantum dot, which is characterized in that the quantum dot is set as selenizing
One of cadmium, perovskite, cadmium telluride, zinc oxide, zinc sulfide crystal, zinc selenide crystal and lead telluride are a variety of.
7. as claimed in claim 6 based on the encapsulating structure of quantum dot, which is characterized in that the green quantum in the green Region
Point is set as one of zinc selenide crystal, cadmium selenide, zinc sulfide crystal or a variety of.
8. as claimed in claim 6 based on the encapsulating structure of quantum dot, which is characterized in that the red quantum in the red light district
Point is set as one or both of cadmium selenide, zinc sulfide crystal.
9. such as the described in any item encapsulating structures based on quantum dot of claim 1-8, which is characterized in that the photoresist layer
Manufacture craft is as follows:
The spin coating photoresist on substrate；
The mask film covering plate on the photoresist；
Mask plate described in ultraviolet light irradiation；
Mask plate described in etching processing obtains the photoresist layer.
10. a kind of display, which is characterized in that including the described in any item encapsulation knots based on quantum dot of such as claim 1-9
Structure.
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| CN114597303A (en) * | 2022-02-23 | 2022-06-07 | 厦门大学 | Color conversion layer capable of inhibiting coffee ring effect and manufacturing method and application thereof |
| FR3119931A1 (en) * | 2021-02-17 | 2022-08-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optoelectronic device and method of manufacturing such a device |
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