CN114300586B - Light-emitting device manufacturing method, light-emitting device and display device - Google Patents
Light-emitting device manufacturing method, light-emitting device and display device Download PDFInfo
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- CN114300586B CN114300586B CN202111642273.2A CN202111642273A CN114300586B CN 114300586 B CN114300586 B CN 114300586B CN 202111642273 A CN202111642273 A CN 202111642273A CN 114300586 B CN114300586 B CN 114300586B
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- 238000002360 preparation method Methods 0.000 abstract description 7
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Abstract
The application discloses a light-emitting device manufacturing method, a light-emitting device and a display device, and belongs to the technical field of photoelectric semiconductors. The preparation method of the light-emitting device comprises the following steps: s1: after transferring the plurality of micro light emitting diodes to the driving substrate, bonding the carrier substrate to the upward side of the driving substrate. S2: and spin-coating photoresist on the upward side of the carrier substrate to fill the photoresist into each upper groove, and removing the photoresist outside the upper grooves by blade coating. S3: and selectively illuminating the micro light emitting diode corresponding to the position of the first groove body. S4: spin-coating the first quantum dots on the upward side of the carrier substrate, so that the first quantum dots are filled in each first groove, and removing the first quantum dots outside the first grooves by blade coating. And (3) sequentially executing the steps S3 and S4 until the second quantum dots are filled in the second groove body. The preparation method of the light-emitting device has simple process, does not need to use ink-jet equipment, and has lower cost.
Description
Technical Field
The application relates to the technical field of photoelectric semiconductors, in particular to a preparation method of a light-emitting device, the light-emitting device and a display device.
Background
Quantum dots are nano-scale semiconductor materials with excellent performance, and when a certain electric field or light pressure is applied to the semiconductor materials, they emit light with a specific frequency, so that light with different colors is generated. A quantum dot based electroluminescent diode (QLED) is a device with quantum dots as the light emitting layer. At present, in the aspect of quantum dot patterning technology, an inkjet printing mode is generally adopted, but the printing equipment is expensive, so that the production cost is high, and the inkjet printing is limited by the equipment, so that the printing resolution of the inkjet printing can be generally lower than 350ppi, and the method is difficult to realize for higher resolution.
Disclosure of Invention
The application provides a light-emitting device manufacturing method, a light-emitting device and a display device, which are used for solving the problems that in the prior art, a quantum dot patterning mode is usually adopted in an inkjet printing mode, printing equipment is expensive, and production cost is high.
To solve the above problems, the present application provides: a method of fabricating a light emitting device, comprising:
step S1: providing a plurality of micro light emitting diodes, transferring the micro light emitting diodes to a driving substrate, and bonding a carrier substrate on the upward side of the driving substrate so that each micro light emitting diode is embedded into each lower groove of the carrier substrate;
step S2: spin-coating photoresist on one upward side of the carrier substrate to fill the photoresist into each upper groove on the carrier substrate, and removing the photoresist outside the upper grooves by blade coating;
step S3: marking one part of the upper groove bodies as first groove bodies, marking the other part of the upper groove bodies as second groove bodies, marking the rest of the upper groove bodies as third groove bodies, and selectively lighting the micrometer light emitting diodes corresponding to the positions of the first groove bodies so as to decompose the photodecomposition in the first groove bodies;
step S4: spin-coating first quantum dots on one surface of the carrier substrate facing upwards so that the first quantum dots are filled in each first groove, and removing the first quantum dots positioned outside the first grooves by blade coating;
step S5: selectively illuminating the micrometer light emitting diode corresponding to the position of the second groove body so as to decompose the photolytic gel in the second groove body;
step S6: and spin-coating the second quantum dots on the upward side of the carrier substrate so that the second quantum dots are filled in each second groove, and removing the second quantum dots positioned outside the second grooves by blade coating.
In one possible implementation manner, the step S6 further includes: and a first mask plate is attached to the upward side of the carrier substrate, the first through holes and the first groove bodies are aligned, and second quantum dots are spin-coated on the side, away from the carrier substrate, of the first mask plate, so that the second quantum dots are filled in each second groove body, and after the second quantum dots are filled in the second groove bodies, the first mask plate is separated from the carrier substrate.
In a possible implementation manner, the step S6 further includes:
step S7: selectively illuminating the micron light emitting diode corresponding to the position of the third groove body so as to decompose and volatilize the photoglue in the third groove body;
step S8: and spin-coating the third quantum dots on the upward side of the carrier substrate, so that the third quantum dots are filled in each third groove, and removing the third quantum dots positioned outside the third grooves by blade coating.
The present application also provides: a light emitting device, comprising:
the LED driving device comprises a driving substrate, wherein one surface of the driving substrate facing upwards is provided with a plurality of micro light emitting diodes, and the micro light emitting diodes are used for emitting incident light;
the light emitting diode comprises a carrier substrate, wherein a plurality of channels are penetrated through the carrier substrate at intervals, transparent partition plates are arranged in the channels, the channels are separated by the transparent partition plates to form a lower groove body and an upper groove body, the position of each lower groove body corresponds to that of each micron light emitting diode, the carrier substrate can be covered on the driving substrate, the micron light emitting diodes can be located in the lower groove body, the upper groove bodies are divided into a first groove body, a second groove body and a third groove body, first quantum dots used for converting incident light into light of a first color are filled in the first groove body, and second quantum dots used for converting the incident light into light of a second color are filled in the second groove body.
In one possible implementation manner, the light emitting device further includes a first mask, the first mask can be detachably attached to the upward side of the carrier substrate, a plurality of first through holes are formed in the first mask, and positions of the first through holes correspond to positions of the second groove body.
In one possible embodiment, the lower groove body is hemispherical so that the transparent barrier forms a concave lens.
In one possible implementation manner, a plurality of transverse grooves and a plurality of longitudinal grooves are formed in one surface of the carrier substrate, facing the driving substrate, the transverse grooves are arranged at intervals along the length direction of the carrier substrate, the longitudinal grooves are arranged at intervals along the width direction of the carrier substrate, adjacent two transverse grooves and adjacent two longitudinal grooves are jointly surrounded to form a partition, each partition is internally provided with a channel, and the transverse grooves and the longitudinal grooves are respectively filled with a light blocking layer.
In one possible embodiment, the light blocking layer includes a black photoresist.
In one possible embodiment, the depth of the lower groove body is greater than the height of the corresponding micro light emitting diode.
The present application also provides: a display device comprising a light emitting device provided by any one of the embodiments above.
The beneficial effects of this application are: when the light-emitting device is manufactured, firstly, each micron light-emitting diode on a carrier substrate is embedded into each lower groove of the carrier substrate in a bonding mode, and photolysis glue is filled into each upper groove on the upward side of the carrier substrate in a spin coating mode. And then selectively lighting the micro light-emitting diode corresponding to the first groove body, so that light emitted by the micro light-emitting diode reaches the first groove body through the transparent partition plate, further, the photolysis gel in the first groove body is decomposed, and then, the first quantum dots are spin-coated on the upward side of the carrier substrate, so that the first quantum dots are filled in the first groove body. And finally, sequentially performing the steps until the second quantum dots are filled in the second groove body. In the preparation process of the light-emitting device, the preparation process is simple, and the ink-jet equipment is not needed, so that the cost is lower, the economic benefit is stronger, and the large-area popularization of the light-emitting device is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a light emitting device according to an embodiment of the present invention;
fig. 2 is a schematic diagram showing a cross-sectional structure of a light emitting device provided by an embodiment of the present invention;
fig. 3 is a schematic diagram showing a cross-sectional structure of a light emitting device according to an embodiment of the present invention when a carrier substrate is provided with lateral grooves and longitudinal grooves;
fig. 4 is a schematic diagram showing a cross-sectional structure of a micro light emitting diode of a light emitting device according to an embodiment of the present invention when the micro light emitting diode is provided with a concave lens;
fig. 5 is a schematic view showing a structure of a carrier substrate of a light emitting device according to an embodiment of the present invention;
fig. 6 is a schematic structural view showing another view angle of a carrier substrate of a light emitting device according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a first mask plate of a light emitting device according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a second mask plate of the light emitting device according to the embodiment of the present invention;
fig. 9 is a schematic structural diagram of a third mask of the light emitting device according to the embodiment of the present invention.
Description of main reference numerals:
100-driving a substrate; 110-micron light emitting diodes; 200-a carrier substrate; 210-channel; 220-transparent separator; 221-concave lens; 230-a lower tank body; 240-upper groove body; 241-first groove body; 242-a second tank; 243-a third tank; 244-first quantum dots; 245-second quantum dots; 246-third quantum dots; 247-photo-curing glue; 248-fourth groove body; 250-transverse grooves; 251-a light blocking layer; 260-longitudinal grooves; 270-partitioning; 300-a first mask plate; 310-a first through hole; 400-a second mask plate; 410-a second through hole; 500-a third mask plate; 510-third via.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc. indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be configured and operated in a particular orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In this application, unless specifically stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Example 1
Referring to fig. 1 and 2, the present embodiment provides a method for manufacturing a light emitting device, including:
step S1: providing a plurality of micro light emitting diodes 110, transferring the micro light emitting diodes 110 to the driving substrate 100, and bonding the carrier substrate 200 to the upward side of the driving substrate 100, so that each micro light emitting diode 110 is embedded into each lower groove 230 of the carrier substrate 200;
step S2: spin-coating photoresist 247 on the upward side of the carrier substrate 200, so that the photoresist 247 is filled in each upper groove 240 on the carrier substrate 200, and removing the photoresist 247 outside the upper groove 240 by knife coating;
step S3: a part of the upper groove 240 is marked as a first groove 241, another part of the upper groove 240 is marked as a second groove 242, the rest of the upper groove 240 is marked as a third groove 243, and the micro light emitting diode 110 corresponding to the position of the first groove 241 is selectively lighted up so as to decompose the photo-decomposition 247 in the first groove 241;
step S4: spin-coating the first quantum dots 244 on the upward side of the carrier substrate 200, so that the first quantum dots 244 are filled in each first groove 241, and removing the first quantum dots 244 positioned outside the first grooves 241 by blade coating;
step S5: selectively illuminating the micro light emitting diode 110 corresponding to the position of the second groove 242 to decompose the photo-resist 247 in the second groove 242;
step S6: the second quantum dots 245 are spin-coated on the upward side of the carrier substrate 200, so that the second quantum dots 245 are filled in each second groove 242, and the second quantum dots 245 outside the second grooves 242 are removed by knife coating.
In the method for manufacturing the light emitting device provided in the embodiment of the present application, when the light emitting device is manufactured, first, each micro light emitting diode 110 on the carrier substrate 200 is embedded into each lower groove 230 of the carrier substrate 200 by means of bonding, and the photolyzing 247 is filled into each upper groove 240 on the upward side of the carrier substrate 200 by means of spin coating. Then, the micro light emitting diode 110 corresponding to the first groove 241 is selectively lighted, so that the light emitted by the micro light emitting diode 110 reaches the first groove 241 through the transparent partition 220, and then the photoresist 247 in the first groove 241 is decomposed, and next, the first quantum dot 244 is spin-coated on the upward side of the carrier substrate 200, so that the first groove 241 is filled with the first quantum dot 244. Finally, the above steps are sequentially performed until the second quantum dots 245 are filled in the second groove 242. In the preparation process of the light-emitting device, the preparation process is simple, and the ink-jet equipment is not needed, so that the cost is lower, the economic benefit is stronger, and the large-area popularization of the light-emitting device is facilitated.
The micro light emitting diode 110 may emit ultraviolet light, and the photoresist 247 may be an ultraviolet photoresist 247, and the ultraviolet light may decompose the ultraviolet photoresist 247, so that the upper groove 240 forms a space capable of accommodating the first quantum dots 244 and the second quantum dots 245.
The micro light emitting diode 110 may emit blue light, the first quantum dot 244 may convert the blue light emitted by the micro light emitting diode 110 into red light, and the second quantum dot 245 may convert the blue light emitted by the micro light emitting diode 110 into green light. By using blue light, red light and green light as three primary colors, various colors can be obtained through the changes of the three primary colors and the superposition of the three primary colors, and finally the full color of the light-emitting device is realized.
In the above embodiment, optionally, step S6 further includes: a first mask plate 300 is attached to the upward side of the carrier substrate 200, the first through holes 310 and the first grooves 241 are aligned, and second quantum dots 245 are spin-coated on the side, away from the carrier substrate 200, of the first mask plate 300, so that the second quantum dots 245 are filled in each second groove 242, and after the second quantum dots 245 are filled in the second grooves 242, the first mask plate 300 is separated from the carrier substrate 200.
Specifically, the first mask plate 300 is arranged to cover the first groove 241, so that the problems of uneven color and the like of the light-emitting device after color conversion caused by reduced light-emitting purity due to the fact that the second quantum dots 245 are mixed with the first quantum dots 244 during the spin coating of the second quantum dots 245 are avoided.
In the foregoing embodiment, optionally, step S6 further includes:
step S7: selectively illuminating the micro light emitting diode 110 corresponding to the position of the third groove 243 to decompose and volatilize the photo-resist 247 in the third groove 243;
step S8: third quantum dots 246 are spin-coated on the upward side of the carrier substrate 200 such that the third quantum dots 246 are filled in each third groove 243, and the third quantum dots 246 located outside the third grooves 243 are removed by knife coating.
Specifically, by disposing the third quantum dots 246 in the third groove 243, the light emitted by the micro light emitting diode 110 is converted into light of other colors, so that the light emitting device can emit light of three different colors.
The first quantum dots 244 can convert light emitted from the micro light emitting diode 110 into red light, and the second quantum dots 245 can convert light emitted from the micro light emitting diode 110 into green light. The third quantum dots 246 are capable of converting light emitted from the micro light emitting diode 110 into blue light. By using blue light, red light and green light as three primary colors, various colors can be obtained through the changes of the three primary colors and the superposition of the three primary colors, and finally the full color of the light-emitting device is realized.
Wherein, step S8 further comprises: a second mask 400 is attached to the upward side of the carrier substrate 200, the second through holes 410 and the second grooves 242 are aligned, and third quantum dots 246 are spin-coated on the side of the second mask 400 away from the carrier substrate 200, so that the third quantum dots 246 are filled in each third groove 243, and after the third quantum dots 246 are filled in the third grooves 243, the second mask 400 is separated from the carrier substrate 200.
Specifically, the second mask 400 is arranged to cover the second groove 242 and the first groove 241, so that the problems of uneven color and the like of the light-emitting device after color conversion caused by the reduction of the light-emitting purity due to the mixing of the third quantum dot 246 with the first quantum dot 244 and the second quantum dot 245 during the spin coating of the third quantum dot 246 are avoided.
Example two
As shown in fig. 2, another embodiment of the present application provides a light emitting device including a driving substrate 100 and a carrier substrate 200. The driving substrate 100 is provided with a plurality of micro light emitting diodes 110 on an upward side, and the micro light emitting diodes 110 are used for emitting incident light. The carrier substrate 200 is provided with a plurality of channels 210 in a penetrating way, transparent partition plates 220 are arranged in the channels 210, the channels 210 are divided into a lower groove 230 and an upper groove 240 by the transparent partition plates 220, the position of each lower groove 230 corresponds to the position of each micro light emitting diode 110, the carrier substrate 200 can be arranged on the driving substrate 100 in a covering way, the micro light emitting diodes 110 can be positioned in the lower groove 230, the upper grooves 240 are divided into a first groove 241, a second groove 242 and a third groove 243, the first groove 241 is filled with first quantum dots 244 for converting incident light into light of a first color, and the second groove 242 is filled with second quantum dots 245 for converting incident light into light of a second color.
Specifically, when the light emitting device is used, since the micro light emitting diode 110 on the driving substrate 100 can be embedded into the lower groove 230 of the carrier substrate 200, when the micro light emitting diode 110 on the driving substrate 100 is turned on, the incident light generated by the micro light emitting diode 110 can pass through the transparent partition 220 on the carrier substrate 200 to reach the upper groove 240, so as to irradiate the first quantum dot 244 and the second quantum dot 245 in the upper groove 240, and the first quantum dot 244 and the second quantum dot 245 can respectively convert the incident light into light of the first color and light of the second color. The first quantum dot 244, the second quantum dot 245 and the third groove 243 can form a pixel, and the brightness of the corresponding quantum dot can be adjusted by adjusting the light emitting brightness of each micro light emitting diode 110 in the pixel, so that the pixel can form lights with various colors, and finally the full color of the light emitting device is realized.
The incident light may be blue light, the first color may be red, the second color may be green, and various colors of light may be obtained by the variation of the three primary colors of light and the superposition of the three primary colors of light.
Example III
As shown in fig. 6, 7 and 8, this embodiment proposes a setting manner of the first mask 300 on the basis of the first embodiment and the second embodiment. The light emitting device further comprises a first mask plate 300, wherein the first mask plate 300 can be detachably attached to the upward side of the carrier substrate 200, a plurality of first through holes 310 are formed in the first mask plate 300, and the positions of the first through holes 310 correspond to the positions of the second groove body 242.
Specifically, the first mask 300 is provided to cover the first groove 241, so that the second quantum dots 245 and the first quantum dots 244 are prevented from being mixed when the second quantum dots 245 are spin-coated. Therefore, the first mask 300 can avoid the reduction of the light-emitting purity of the light-emitting device, and avoid the problem of uneven color after the color conversion of the light-emitting device.
Example IV
As shown in fig. 3, this embodiment proposes an arrangement of the carrier substrate 200 on the basis of the first to third embodiments. The lower groove 230 has a hemispherical shape so that the transparent barrier 220 forms a concave lens 221.
Specifically, the concave lens 221-shaped transparent spacer 220 can change the direction of the incident light, so that the incident light is intensively irradiated to the first quantum dot 244, the second quantum dot 245 and the third quantum dot 246 in the upper groove 240, and the brightness of the light emitting device is improved, and the light emitting efficiency of the light emitting device is improved.
As shown in fig. 3 to 5, in the above embodiment, optionally, a plurality of transverse grooves 250 and a plurality of longitudinal grooves 260 are formed on a surface of the carrier substrate 200 facing the driving substrate 100, the plurality of transverse grooves 250 are arranged at intervals along the length direction of the carrier substrate 200, the plurality of longitudinal grooves 260 are arranged at intervals along the width direction of the carrier substrate 200, two adjacent transverse grooves 250 and two adjacent longitudinal grooves 260 form a partition 270 together, a channel 210 is formed in each partition 270, and the transverse grooves 250 and the longitudinal grooves 260 are respectively filled with a light blocking layer 251.
Specifically, the light blocking layer 251 is filled in the lateral grooves 250 and the longitudinal grooves 260 through the plurality of lateral grooves 250 and the plurality of longitudinal grooves 260, so that crosstalk among incident light, light of a first color, light of a second color and light of a third color in the light emitting device is avoided, the color accuracy of the light emitting device is improved, and the color is more accurately conveyed.
In the above-described embodiment, the light blocking layer 251 may optionally include black photoresist.
Specifically, the light blocking layer 251 may be a black photoresist, and the black photoresist can absorb light of any color, which is beneficial to improving the light-blocking capability.
As shown in fig. 2, in the above embodiment, the depth of the lower groove 230 is optionally greater than the height of the corresponding micro led 110.
Specifically, the depth of the lower groove 230 is greater than the height of the corresponding micro light emitting diode 110, so that the micro light emitting diode 110 can be completely embedded into the lower groove 230, and leakage of incident light emitted by the micro light emitting diode 110 due to exposure of the micro light emitting diode 110 is avoided. Therefore, the arrangement of the lower groove 230 improves the incident light emitted by the micro light emitting diode 110, so that the light emitting efficiency of the light emitting device is improved.
As shown in fig. 6, in the above embodiment, optionally, the plurality of upper grooves 240 further includes a fourth groove 248, and the fourth groove 248 is filled with fourth quantum dots for converting incident light into light of a fourth color.
Specifically, when the color system used in the light emitting device is CMYK (printing four-color mode), the first color may be Cyan (Cyan), the second color may be Magenta (Magenta), the third color may be Yellow (Yellow), and the fourth color may be Black (Black). The first quantum dot 244, the second quantum dot 245, the third quantum dot 246 and the fourth quantum dot form a pixel together, so that the light-emitting device generates richer color light, and the user experience is improved.
As shown in fig. 9, in the foregoing embodiment, optionally, the light emitting device further includes a third mask 500, where a plurality of third through holes 510 are formed in the third mask 500, and positions of the third through holes 510 correspond to positions of the fourth groove 248.
Specifically, the third mask 500 is provided to cover the third groove 243, the second groove 242 and the first groove 241, so that the problems of uneven color and the like after color conversion of the light-emitting device caused by reduced light purity due to mixing of the fourth quantum dot with the first quantum dot 244, the second quantum dot 245 and the third quantum dot 246 are avoided during spin coating of the fourth quantum dot.
Example five
Another embodiment of the present application provides a display apparatus including the light emitting device of any one of the above embodiments.
The display device provided in the embodiments of the present application has the light emitting device provided in any one of the embodiments, so that the display device has all the beneficial effects of the light emitting device provided in any one of the embodiments, and will not be described in detail herein.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Although embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives, and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.
Claims (8)
1. A method of manufacturing a light emitting device, comprising:
step S1: providing a plurality of micro light emitting diodes, transferring the micro light emitting diodes to a driving substrate, and bonding a carrier substrate on the upward side of the driving substrate so that each micro light emitting diode is embedded into each lower groove of the carrier substrate;
step S2: spin-coating photoresist on one upward side of the carrier substrate to fill the photoresist into each upper groove on the carrier substrate, and removing the photoresist outside the upper grooves by blade coating;
step S3: marking one part of the upper groove bodies as first groove bodies, marking the other part of the upper groove bodies as second groove bodies, marking the rest of the upper groove bodies as third groove bodies, and selectively lighting the micrometer light emitting diodes corresponding to the positions of the first groove bodies so as to decompose the photodecomposition in the first groove bodies;
step S4: spin-coating first quantum dots on one surface of the carrier substrate facing upwards so that the first quantum dots are filled in each first groove, and removing the first quantum dots positioned outside the first grooves by blade coating;
step S5: selectively illuminating the micrometer light emitting diode corresponding to the position of the second groove body so as to decompose the photolytic gel in the second groove body;
step S6: and spin-coating the second quantum dots on the upward side of the carrier substrate so that the second quantum dots are filled in each second groove, and removing the second quantum dots positioned outside the second grooves by blade coating.
2. The method of manufacturing a light-emitting device according to claim 1, wherein the step S6 further comprises: and a first mask plate is attached to the upward side of the carrier substrate, a plurality of first through holes are formed in the first mask plate, the first through holes are aligned with the first groove bodies, and second quantum dots are spin-coated on the side, away from the carrier substrate, of the first mask plate, so that the second quantum dots are filled in each second groove body, and after the second quantum dots are filled in the second groove bodies, the first mask plate is separated from the carrier substrate.
3. The method of manufacturing a light-emitting device according to claim 1, further comprising, after the step S6:
step S7: selectively illuminating the micron light emitting diode corresponding to the position of the third groove body so as to decompose and volatilize the photoglue in the third groove body;
step S8: and spin-coating the third quantum dots on the upward side of the carrier substrate, so that the third quantum dots are filled in each third groove, and removing the third quantum dots positioned outside the third grooves by blade coating.
4. A light emitting device, comprising:
the LED driving device comprises a driving substrate, wherein one surface of the driving substrate facing upwards is provided with a plurality of micro light emitting diodes, and the micro light emitting diodes are used for emitting incident light;
the light emitting diode display device comprises a carrier substrate, wherein a plurality of channels are penetrated through the carrier substrate at intervals, transparent partition plates are arranged in the channels, the channels are divided into a lower groove body and an upper groove body by the transparent partition plates, the position of each lower groove body corresponds to the position of each micron light emitting diode, the carrier substrate can be arranged on the driving substrate in a covering mode, the micron light emitting diodes can be positioned in the lower groove body, the upper groove bodies are divided into a first groove body, a second groove body and a third groove body, first quantum dots for converting incident light into light of a first color are filled in the first groove body, and second quantum dots for converting the incident light into light of a second color are filled in the second groove body;
the light-emitting device further comprises a first mask plate, wherein the first mask plate can be detachably attached to the upward side of the carrier substrate, a plurality of first through holes are formed in the first mask plate, and the positions of the first through holes correspond to the positions of the second groove bodies;
a plurality of transverse grooves and a plurality of longitudinal grooves are formed on one surface of the carrier substrate facing the driving substrate, the transverse grooves are arranged at intervals along the length direction of the carrier substrate, the longitudinal grooves are arranged at intervals along the width direction of the carrier substrate, and a partition is formed by surrounding the adjacent two transverse grooves and the adjacent two longitudinal grooves together, each partition is internally provided with a channel, and the transverse grooves and the longitudinal grooves are respectively filled with a light blocking layer.
5. The light-emitting device according to claim 4, wherein the lower groove body has a hemispherical shape so that the transparent barrier forms a concave lens.
6. The light-emitting device according to claim 4, wherein the light-blocking layer comprises black photoresist.
7. The light emitting device of claim 4, wherein the depth of the lower channel is greater than the height of the corresponding micro light emitting diode.
8. A display apparatus comprising the light-emitting device according to any one of claims 4 to 7.
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