CN113937123A - Display device and manufacturing method - Google Patents
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- CN113937123A CN113937123A CN202111145957.1A CN202111145957A CN113937123A CN 113937123 A CN113937123 A CN 113937123A CN 202111145957 A CN202111145957 A CN 202111145957A CN 113937123 A CN113937123 A CN 113937123A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
The invention provides a display device and a manufacturing method, comprising the following steps: a substrate including a connection electrode; the light emitting diode is arranged on one side of the substrate and is electrically connected with the connecting electrode; the isolation layer is arranged on one side of the substrate and comprises an isolation groove and an isolation unit surrounding the isolation groove, and the light emitting diode is arranged in the isolation groove; the light-emitting diode device comprises a substrate, a blocking structure and a light-emitting diode, wherein the blocking structure is arranged on one side of the light-emitting diode device, which is far away from the substrate, and comprises a first blocking layer and a second blocking layer which are overlapped; the color conversion layer is arranged on one side, away from the substrate, of the blocking structure and is opposite to the light emitting diode in the thickness direction of the substrate; and the protective layer is arranged on one side of the color conversion layer, which is far away from the substrate.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a display device and a manufacturing method thereof.
Background
Micro/Mini LED technology, namely LED scaling and matrixing technology, refers to a high-density Micro-sized LED integrated on a chip, for example, each pixel of an LED display screen can be addressed and independently driven to light, and the pixel grade is reduced from millimeter grade to micron grade. The Micro/Mini LED not only inherits the advantages of high efficiency, high brightness, high reliability and quick response time of the traditional LED, but also has the characteristics of energy conservation, simple mechanism, small volume, thinness and no need of a backlight source for light emission.
The existing Micro/Mini LED chip display device is inferior to a blue Micro/Mini LED chip in yield and cost because the red/green Micro/Mini LED chip is usually used as exciting light, and the Micro/Mini LED chip is additionally used for color conversion by quantum dots or fluorescent powder so as to perform full-color display.
At present, a scheme of performing color conversion by using quantum dots or fluorescent powder to enable a Micro/Mini LED to perform full-color display is adopted, wherein quantum dots or fluorescent powder materials are manufactured on an independent substrate to serve as a conversion substrate, and then the conversion substrate is attached to the Micro/Mini LED substrate to form a display device. The disadvantage of this method is that there is a gap between the Micro/Mini LED substrate and the conversion substrate, and therefore, the Micro/Mini LED may have crosstalk, resulting in poor display effect of the display device.
In addition, according to the currently proposed display scheme of the quantum dot or the fluorescent powder conversion layer directly manufactured on the Micro/Mini LED chip, the quantum dot or the fluorescent powder directly contacts the Micro/Mini LED chip, and heat generated by the operation of the Micro/Mini LED chip directly affects the quantum dot or the fluorescent powder, so that the problem of poor service life of the color conversion layer exists. And the quantum dot or phosphor powder conversion layer is manufactured on the substrate of the display device in an ink-jet printing mode, and due to the fact that different films on the substrate have height differences, uneven areas are prone to appearing on the cured quantum dot or phosphor powder conversion layer, the uneven areas easily cause the problems that the display device is uneven in light emitting at different visual angles, the follow-up packaging effect is poor, the service life of the device is reduced, the display effect is degraded and the like.
Disclosure of Invention
The invention aims to provide a display device and a manufacturing method thereof, which are used for overcoming the problems of the prior display device that the performance of a color conversion layer material is reduced because a color conversion layer is directly manufactured on a Micro/Mini LED chip, and the problems of uneven light emitting, poor packaging effect, reduced service life of the device, deteriorated display effect and the like caused by uneven areas on the surface of the color conversion layer.
In order to solve the above problem, an aspect of the present invention provides a display device, including: a substrate including a connection electrode; the light emitting diode is arranged on one side of the substrate and is electrically connected with the connecting electrode; the isolation layer is arranged on one side of the substrate and comprises an isolation groove and an isolation unit surrounding the isolation groove, and the light emitting diode is arranged in the isolation groove; the light-emitting diode device comprises a substrate, a blocking structure and a light-emitting diode, wherein the blocking structure is arranged on one side of the light-emitting diode device, which is far away from the substrate, and comprises a first blocking layer and a second blocking layer which are overlapped, the second blocking layer comprises a blocking unit, and the blocking unit is positioned in an isolation groove; the color conversion layer is arranged on one side, far away from the substrate, of the blocking structure and is opposite to the light emitting diode in the thickness direction of the substrate; and the protective layer is arranged on one side of the color conversion layer, which is far away from the substrate.
As an optional technical solution, the first barrier layer is an inorganic barrier layer; the second barrier layer is an organic barrier layer.
As an optional technical solution, a first surface of the organic barrier layer, which is far away from the light emitting diode, is a flat surface.
As a selectable technical solution, the inorganic barrier layer covers the top of the light emitting diode and is in direct contact with the light emitting diode, and the organic barrier layer is disposed above the inorganic barrier layer.
As an optional technical solution, the color conversion layer is disposed above the first surface.
As a selectable technical solution, the organic barrier layer covers the top of the light emitting diode and is in direct contact with the light emitting diode, and the inorganic barrier layer covers the top of the organic barrier layer.
As an optional technical solution, the inorganic barrier layer includes a flat portion, and the flat portion is located in the isolation trench, wherein in a thickness direction of the substrate, the flat portion is stacked above the first surface and is opposite to the light emitting diode.
As an optional technical solution, the color conversion layer is disposed above the flat portion.
As an optional technical solution, the protective layer includes a first inorganic layer, a middle organic layer, and a second inorganic layer stacked from bottom to top, and the first inorganic layer covers over the color conversion layer.
The invention also provides a manufacturing method of the display panel, which is used for manufacturing the display panel, and the manufacturing method comprises the following steps:
providing a substrate, wherein one side of the substrate comprises an electrode and a light emitting diode electrically connected with the electrode;
forming an isolation layer on one side of the substrate, wherein the isolation layer is provided with an isolation groove, and the light-emitting diode is exposed from the isolation groove;
forming a blocking structure on one side of the light emitting diode far away from the substrate;
forming a color conversion layer on one side of the blocking structure far away from the light emitting diode; and
forming a protective layer on one side of the color conversion layer away from the substrate;
wherein, separation structure includes first barrier layer and second barrier layer, the second barrier layer includes the separation unit, the separation unit is located in the isolation groove, the separation unit is kept away from the first surface of emitting diode one side is the even surface.
Compared with the prior art, the invention provides a display device and a manufacturing method thereof, wherein one side of an isolation layer of the display device is provided with an isolation structure, the isolation structure comprises a first isolation layer and a second isolation layer which are superposed, and the second isolation layer is used for providing a flat surface, so that a subsequently manufactured color conversion layer is positioned above the flat surface, and the problem of inconsistent light emitting effects at different visual angles caused by the fact that the color conversion layer is uneven is avoided. In addition, the color conversion layer is not in direct contact with the light emitting diode due to the blocking structure, so that the material degradation of the color conversion layer is avoided, and the service life of the color conversion layer is effectively prolonged.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic cross-sectional view of a display device according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of a substrate of the display device in fig. 1.
Fig. 3 to 4 are cross-sectional views illustrating a process of fabricating the isolation layer of fig. 1.
FIG. 5 is a cross-sectional view of the organic barrier layer of FIG. 1.
Fig. 6 is a schematic cross-sectional view of the inorganic barrier layer of fig. 1.
FIG. 7 is a schematic cross-sectional view of the light-shielding layer of FIG. 1.
Fig. 8 is a schematic cross-sectional view of the color conversion layer of fig. 1.
Fig. 9 is a schematic cross-sectional view of a first inorganic layer for forming the protective layer of fig. 1.
Fig. 10 is a schematic cross-sectional view of an intermediate organic layer for forming the protective layer of fig. 1.
Fig. 11 is a schematic cross-sectional view of a second inorganic layer for forming the protective layer of fig. 1.
Fig. 12 is a schematic cross-sectional view of a display device according to another embodiment of the invention.
FIG. 13 is a schematic diagram of the fabrication of the inorganic barrier layer of FIG. 12.
FIG. 14 is a schematic cross-sectional view of the light-shielding layer of FIG. 12.
FIG. 15 is a cross-sectional view of the organic barrier layer of FIG. 12.
FIG. 16 is a schematic cross-sectional view of the color conversion layer of FIG. 12
Fig. 17 is a schematic cross-sectional view of a first inorganic layer for forming the protective layer of fig. 12.
Fig. 18 is a schematic cross-sectional view of an intermediate organic layer for forming the protective layer of fig. 12.
Fig. 19 is a schematic cross-sectional view of a second inorganic layer for forming the protective layer of fig. 12.
Fig. 20 is a flowchart of a method for manufacturing a display device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
The invention aims to provide a display device and a manufacturing method thereof, wherein the display device comprises a substrate, a light emitting diode, an isolation layer, a blocking structure, a color conversion layer and a protective layer, wherein the blocking structure covers the light emitting diode, the color conversion layer is arranged above the blocking structure, and the blocking structure enables the color conversion layer not to be in direct contact with the light emitting diode, so that the influence of the light emitting diode on the color conversion layer can be effectively avoided.
In addition, the protective layer covers the color conversion layer, so that the color conversion layer is coated by the barrier structure and the protective layer, the influence of water and oxygen in the external environment on the color conversion layer is effectively isolated, and the service life of the color conversion layer is prolonged.
As shown in fig. 1, an embodiment of the invention provides a display device 100, which includes a substrate 10, a light emitting diode 20, an isolation layer 30, a barrier structure, a color conversion layer 90, and a protection layer 70, wherein the barrier structure includes a first barrier layer 50 and a second barrier layer 40 stacked on each other, and the first barrier layer 50 and the second barrier layer 40 are used together to block the color conversion layer 90 from directly contacting the light emitting diode 20; moreover, the protective layer 70 covers the color conversion layer 90, and the barrier structure and the protective layer 90 jointly isolate the color conversion layer 90 from contacting with external water and oxygen, thereby prolonging the service life of the color conversion layer 90.
The following describes a manufacturing process of the display device 100 in fig. 1 with reference to fig. 2 to 10.
As shown in fig. 2, the substrate 10 is provided with an electrode 11, and the device electrode of the light emitting diode 20 is electrically connected to the electrode 11, such as the driving electrode 11, on the substrate 10.
In a preferred embodiment, the led 20 is transferred to the substrate 10 and electrically connected to the electrode 11, for example, by bulk transfer technology.
The light emitting diode 20 is, for example, a Micro/Mini light emitting diode, preferably, a blue Micro/Mini light emitting diode; the substrate 10 is, for example, a glass substrate, a driver circuit board, a silicon substrate, or the like; the material of the electrode 11 is selected from metals such as tin (Sn), indium (In), and gold (Au), or alloys of the metals. In addition, the light emitting diode 20 and the electrode 11 may be electrically connected by a conductive adhesive, such as ACF.
In a preferred embodiment, the light emitting diodes 20 on the substrate 10 are arranged in an array, for example.
As shown in fig. 1, 3 and 4, an isolation material is coated on one side of the substrate 10, and an isolation material layer 30 'is formed after the isolation material is cured, wherein the isolation material layer 30' covers the whole surface of one side of the substrate 10; the patterning process is performed again to form the isolation trench 32 and the isolation unit 31 surrounding the isolation trench 32.
The spacer material layer 30 'is selected from a non-light-transmitting resin material, for example, the color of the non-light-transmitting resin material includes black, gray, white, yellow, etc., wherein the film thickness of the spacer material layer 30' is about 10-100 μm. In this embodiment, the isolation layer 30 obtained by patterning the isolation material layer 30' functions as an inorganic barrier layer and an organic barrier layer for supporting the carrier-carrying barrier structure, and therefore, it needs to have a certain film thickness.
The steps of the patterning process of the spacer material layer 30' generally include:
coating a photoresist (not shown) on the side of the isolation material layer 30' away from the substrate 10, wherein the thickness of the photoresist layer is about 1-100 μm; exposing and developing to form a photoresist pattern, wherein a partial region of the isolation material layer 30' is exposed from the photoresist pattern; by dry etching, the exposed portion of the isolation material layer 30' is etched to form an isolation trench 32, and the isolation trench 32 has an inverted trapezoid shape. The upper portion of the light emitting diode 20 is exposed from the bottom 321 of the inverted trapezoidal isolation groove 32.
The etching gas used in the dry etching is mainly O2，CF4Ar; the dry Etching process uses equipment such as Plasma etcher (Plasma), Reactive Ion Etching (RIE), inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE).
It should be noted that, due to the existing etching process, it is difficult to level the top surface of the light emitting diode 20 and the upper surface of the bottom 321 of the isolation trench 32, and therefore, a step exists between the top surface of the light emitting diode 20 and the upper surface of the bottom 321. And the existence of this step easily leads to the structure of unevenness to appear after the colour conversion layer 90 solidification, and then the light-emitting colour is uneven when different visual angles, leads to the display quality to descend. The rugged structure of the color conversion layer 90 after curing also affects the blocking effect of the subsequent barrier layer, and the service life of the display device is reduced.
As shown in fig. 1 and fig. 5, an organic barrier layer 40 is formed on a side of the light emitting diode 20 away from the substrate 10, the organic barrier layer 40 includes a plurality of barrier units 41, each barrier unit 41 is respectively located in the isolation trench 32 and covers a bottom 321 of the isolation trench 32 and an upper portion of the light emitting diode 20.
In this embodiment, the plurality of barrier units 41 of the organic barrier layer 40 are sprayed in the isolation groove 32 by means of inkjet printing; the film thickness of the organic barrier layer 40 is 5-10 μm; the material of the organic barrier layer 40 is selected from, for example, transparent heat insulating resins. The first surface 401 of the blocking unit 41 on the side away from the substrate 10 is a flat surface.
In addition, in the thickness direction of the substrate 10, the first surface 401 is located below the top surface of the side of the isolation unit 31 away from the substrate 10, that is, the isolation unit 41 is filled inside the isolation groove 32. The blocking unit 41 is filled in the isolation groove 32, and the space above the isolation groove 32 is used for limiting the forming position of the color conversion layer 90, so that different color conversion units in the color conversion layer 90 can be aligned with the light emitting diodes 20 conveniently, the manufacturing difficulty is reduced, and colorized display is realized.
The organic barrier layer 40 is used as a part of the barrier structure, on one hand, a flat surface is provided, so that the step between the bottom 321 of the isolation groove 32 and the upper part of the light emitting diode 20 is eliminated, the color conversion layer 90 subsequently manufactured above the flat surface does not have an uneven structure, the consistency of the light emitting colors of the color conversion layer 90 at different viewing angles is realized, and the display quality is improved; on the other hand, the organic barrier layer 40 prevents the color conversion layer 90 from directly contacting the light emitting diode 20, and blocks the heat generated by the operation of the light emitting diode 30 from affecting the material of the color conversion layer 90, thereby reducing the material degradation of the color conversion layer 90.
As shown in fig. 1 and 6, the inorganic barrier layer 50 is formed on a side of the organic barrier layer 40 away from the substrate, and the inorganic barrier layer 50 has a flat portion 501 in a thickness direction of the substrate 10, the flat portion 501 is stacked above the first surface 401, and the flat portion 501 is located in the isolation trench 32 and opposite to the light emitting diode 20.
The inorganic barrier layer 50 is fabricated by Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or the like.
The thickness of the film layer of the inorganic barrier layer 50 is 0.01-1 μm; the material is selected from SiO2，Si3N4，Al2O3，AlN，TiO2，HfO2And the like. In this embodiment, the color conversion unit of the color conversion layer 90 is formed on the side of the flat portion 501 away from the substrate 10, wherein the inorganic barrier layer 50 and the color conversion layer 90 have good contact stability, and are used for isolating water and oxygen in the external environment from entering the color conversion layer 90, protecting the material of the color conversion layer 90, and prolonging the service life.
The flat portion 501 of the inorganic layer 50 is fabricated by using the flat first surface 401 as a template, the upper surface of the flat portion 501 is located below the top surface of the isolation unit 31, and the space between the upper surface of the flat portion 501 and the top surface of the isolation unit 31 defines the formation position of the color conversion unit of the color conversion layer 90, and at this time, the color conversion unit is formed above the flat portion 501 and directly contacts the flat portion 501.
In addition, in the present embodiment, the whole surface of the planarization layer 50 covers the side of the isolation layer 30 away from the substrate 10.
As shown in fig. 7, a light shielding layer 60 is formed on a side of the inorganic layer 50 away from the substrate, the light shielding layer 60 includes light shielding units 61 and openings 62, and the light shielding units 61 are located above portions of the inorganic barrier layer 50 corresponding to the isolation units 31 in the thickness direction of the substrate 10; the opening 62 corresponds to the isolation groove 32, and the flat portion 501 is exposed from the opening 62.
In this embodiment, the light-shielding layer 60 is, for example, a black matrix, and the thickness of the layer is 1-10 μm. The light-shielding layer 60 is formed by coating a light-shielding material on the inorganic barrier layer 50, and then performing exposure and development patterning processes.
The light shielding units 61 of the light shielding layer 60 are used to overcome the crosstalk of light emission between the adjacent light emitting diodes 20, and form a good hydrophobic surface.
As shown in fig. 1 and 8, the color conversion layer 90 is formed above the flat portion 501 of the inorganic layer 50.
In order to realize a colorized display of the display device 100, when the light emitting diode 20 is a blue light emitting diode, the color conversion layer 90 generally includes a first color conversion unit 91, a second color conversion unit 92 and a blank filling unit 93, and light emitted by the corresponding light emitting diode 20 is converted into corresponding red and green from the first color quantum dot 911 of the first color conversion unit 91 and the second color quantum dot 921 of the second color conversion unit 92, respectively; the light emitted from the led 20 passes through the blank filling unit 93 and the color thereof is not changed. The first color conversion unit 91, the second color conversion unit 92 and the blank filling unit 93 further include scattering particles, respectively, and the scattering particles are used to make the light emitted uniformly, so that the display effect is better.
The first color conversion unit 91, the second color conversion unit 92, and the blank filling unit 93 in the color conversion layer 90 are each manufactured by an inkjet printing method.
In the present embodiment, since the color conversion layer 90 is formed after the light-shielding layer 60, the first color conversion unit 91, the second color conversion unit 92, and the blank filling unit 93 are respectively limited to the spaces between the corresponding isolation unit 31, the light-shielding unit 61, and the flat portion 501.
The blank filling units 93 are filled above the corresponding flat portions 501, so as to prevent the protective layer 70 from forming obvious depressions in the areas, thereby overcoming the problem of large height difference of the film layers in the display device 100, and contributing to the increase of the manufacturing yield of the display device 100. In addition, the blank filling unit 93 makes the film thickness between the light emitting units consistent, and the light emitting angle between the light emitting units consistent, so as to achieve a more uniform display effect.
As shown in fig. 1 and 9, the first inorganic layer 71 of the protective layer 70 is formed over the color conversion layer 90.
The first inorganic layer 71 is entirely covered on one side of the substrate 10, and is fabricated by Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or the like.
The thickness of the first inorganic layer 71 is 0.01 to 1 μm; the material is selected from SiO2、Si3N4、Al2O3、AlN、TiO2、HfO2And the like.
The first inorganic layer 71 and the inorganic barrier layer 50 under the color conversion layer 90 are isolated from the color conversion layer 90 by water and oxygen in the external environment.
As shown in fig. 1 and 10, an intermediate organic layer 72 is formed over the first inorganic layer 71.
The intermediate organic layer 72 has a film thickness of 5 to 10 μm and is formed by, for example, coating or ink jet printing. The material of the intermediate organic layer 72 is, for example, acryl resin (PMMA), phenolic resin (novolac resin), Polyimide resin (PI), or the like.
As shown in fig. 1 and 11, a second inorganic layer 73 is formed over the intermediate organic layer 72.
The second inorganic layer 73 is formed by Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or the like.
The thickness of the second inorganic layer 73 is 0.01-1 μm; the material is selected from SiO2、Si3N4、Al2O3、AlN、TiO2、HfO2And the like.
Among them, the protective layer 70 composed of the first inorganic layer 71, the intermediate organic layer 72 and the second inorganic layer 73 can be regarded as a composite encapsulation film, which can effectively prevent moisture and oxygen from permeating into the color conversion layer 90 to contact, resulting in a reduction in the service life of the color conversion layer 90.
As shown in fig. 1, the display device 100 further includes a color filter layer 80 formed on the protection layer 70, wherein the color filter layer 80 includes a first filter unit 81, a second filter unit 82 and a third filter unit 83, and the first filter unit 81, the second filter unit 82 and the third filter unit 83 are respectively in one-to-one correspondence with the corresponding light emitting diodes 20 in the thickness direction of the substrate 10.
The first color conversion unit 91 is located between the first filter unit 81 and the corresponding light emitting diode 20; the second color conversion unit 92 is positioned between the second filter unit 82 and the corresponding light emitting diode 20; the blank filling unit 93 is positioned between the third filter unit 83 and the corresponding light emitting diode 20.
The emergent light color of the first color conversion unit 91 is the same as the color of the first filter unit 81, for example, red; the color of the output light of the second color conversion unit 92 is the same as the color of the second filter unit 82, for example, green; the third filter unit 83 has the same color as the corresponding led 20, for example, blue.
In this embodiment, filter materials of different colors are coated on the protective layer 70, and a patterning process of exposure and development is performed to form a first filter unit 81, a second filter unit 82, and a third filter unit 83.
Wherein, the film thicknesses of the first filter unit 81, the second filter unit 82 and the third filter unit 83 are 1-5 μm respectively.
As shown in fig. 12, a display device 200 is further provided in another embodiment of the present invention.
As shown in fig. 1 and 12, the display device 200 is different from the display device 100 in that the barrier structure has a different interlayer structure. In fig. 1 and 12, the same reference numerals denote the same elements with similar functions, and are not repeated herein.
As shown in fig. 4, 12 and 13, the inorganic barrier layer 210 of the barrier structure is formed on a side of the isolation layer 30 away from the substrate 10, and a portion of the inorganic barrier layer 210 located in the isolation groove 32 covers a side of the light emitting diode 20 away from the substrate 10.
The inorganic barrier layer 210 is fabricated by Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or the like.
The thickness of the inorganic barrier layer 210 is 0.01 to 1 μm; the material is selected from SiO2，Si3N4，Al2O3，AlN，TiO2，HfO2And the like.
In this embodiment, a step is formed between the inorganic barrier layer 210 positioned in the isolation trench 32 and the upper portion of the light emitting diode 20. In order to overcome the influence of the step on the color conversion layer 90 to be fabricated subsequently, the organic barrier layer 220 is formed to cover the step, and the color conversion layer 90 is fabricated on the planar first surface 222 of the organic barrier layer 220.
As shown in fig. 12 and 15, the organic barrier layer 220 forms a side of the inorganic barrier layer 210 away from the substrate 10, the organic barrier layer 220 includes a plurality of barrier units 221, and the plurality of barrier units 221 are located in the isolation groove 32 and cover a portion of the inorganic barrier layer 210 located in the isolation groove 32 and an upper portion of the light emitting diode 20.
The blocking unit 221 is sprayed in the isolation groove 32 by means of inkjet printing.
The film thickness of the organic barrier layer 220 is 5-10 μm; the material of the organic barrier layer 220 is selected from, for example, transparent heat insulating resins. The first surface 222 of the organic barrier layer 220 away from the substrate 10 is a flat surface.
In addition, in the thickness direction of the substrate 10, the first surface 222 of the barrier unit 221 is located below the top surface of the side of the isolation unit 31 away from the substrate 10, that is, the barrier unit 221 is filled inside the isolation groove 32. The blocking unit 221 is filled in the isolation groove 32, and the space above the isolation groove 32 is used for limiting the forming position of the color conversion layer 90, so that different color conversion units in the color conversion layer 90 can be aligned with the light emitting diodes 20 conveniently, the manufacturing difficulty is reduced, and colorized display is realized.
As shown in fig. 12 and 14, before the organic barrier layer 220 is formed, a light-shielding layer 60 is formed on a side of the substrate away from the inorganic barrier layer 210.
The light-shielding layer 60 includes light-shielding cells 61 and openings 62, and the light-shielding cells 61 are located above the portions of the inorganic barrier layer 210 corresponding to the barrier cells 31 in the thickness direction of the substrate 10; the opening 62 corresponds to the isolation trench 32, and the light emitting diode 20 is exposed from the opening 62.
In this embodiment, the light-shielding layer 60 is, for example, a black matrix, and the thickness of the layer is 1-10 μm. The light-shielding layer 60 is formed by coating a light-shielding material on the inorganic barrier layer 210, and then performing exposure and development patterning processes.
The light shielding units 61 of the light shielding layer 60 are used to overcome the crosstalk of light emission between the adjacent light emitting diodes 20.
As shown in fig. 12 and 16, the color conversion layer 90 is formed over the first surface 222 of the organic barrier layer 220. By the flat first surface 222 of the blocking unit 221 of the organic blocking layer 220, the color conversion layer 90 does not have an uneven area, so that the light emitting colors of the color conversion layer 90 at different viewing angles are consistent, and the display quality is improved.
As shown in fig. 12 and 17 to 19, the method further includes sequentially forming a first inorganic layer 71, an intermediate organic layer 72, and a second inorganic layer 73 of a protective layer 70 over the color conversion layer 90. The film thickness, the manufacturing method, and the material of the first inorganic layer 71, the intermediate organic layer 72, and the second inorganic layer 73 can refer to the description of the display device 100, and are not repeated herein.
As shown in fig. 20, the present invention further provides a manufacturing method 300 of the display panels 100 and 200.
The manufacturing method 300 includes:
providing a substrate, wherein one side of the substrate comprises an electrode and a light emitting diode electrically connected with the electrode;
forming an isolation layer on one side of the substrate, wherein the isolation layer is provided with an isolation groove, and the light-emitting diode is exposed from the isolation groove;
forming a blocking structure on one side of the light-emitting diode far away from the substrate;
forming a color conversion layer on one side of the blocking structure far away from the light emitting diode; and
and forming a protective layer on the side of the color conversion layer far away from the substrate.
Wherein, separation structure includes first barrier layer and second barrier layer, and the second barrier layer includes the separation unit, and the separation unit is arranged in the isolation groove, and the first surface that emitting diode one side was kept away from to the separation unit is the even surface.
In a preferred embodiment, the first barrier layer is an inorganic barrier layer, and the second barrier layer is an organic barrier layer, wherein the organic barrier layer includes barrier units, and a first surface of the barrier units, which is away from the substrate, is a flat surface.
In addition, when the inorganic barrier layer is formed above the organic barrier layer, the area of the inorganic barrier layer corresponding to the first surface is a flat part, and the color conversion layer directly contacts the flat part of the inorganic barrier layer; when the organic barrier layer is formed above the inorganic barrier layer, the barrier unit of the organic barrier layer covers the part of the inorganic barrier layer in the isolation groove, and at the moment, the color conversion layer directly contacts the flat first surface of the barrier unit.
In summary, the present invention provides a display device and a manufacturing method thereof, wherein a blocking structure is disposed on one side of an isolation layer of the display device, the blocking structure includes a first blocking layer and a second blocking layer that are stacked, and the second blocking layer is used for providing a flat surface, so that a color conversion layer manufactured subsequently is located above the flat surface, and the problem of inconsistent light-emitting effects at different viewing angles due to unevenness of the color conversion layer is avoided. In addition, the color conversion layer is not in direct contact with the light emitting diode due to the blocking structure, so that the material degradation of the color conversion layer is avoided, and the service life of the color conversion layer is effectively prolonged.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It is to be noted that the present invention may take various other embodiments, and that various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A display device, characterized in that the display device comprises:
a substrate including a connection electrode;
the light emitting diode is arranged on one side of the substrate and is electrically connected with the connecting electrode;
the isolation layer is arranged on one side of the substrate and comprises an isolation groove and an isolation unit surrounding the isolation groove, and the light emitting diode is arranged in the isolation groove;
the light-emitting diode device comprises a substrate, a blocking structure and a light-emitting diode, wherein the blocking structure is arranged on one side of the light-emitting diode device, which is far away from the substrate, and comprises a first blocking layer and a second blocking layer which are overlapped, the second blocking layer comprises a blocking unit, and the blocking unit is positioned in an isolation groove;
the color conversion layer is arranged on one side, far away from the substrate, of the blocking structure and is opposite to the light emitting diode in the thickness direction of the substrate; and
the protective layer is arranged on one side, far away from the substrate, of the color conversion layer.
2. The display device according to claim 1, wherein the first barrier layer is an inorganic barrier layer; the second barrier layer is an organic barrier layer.
3. The display device according to claim 2, wherein a first surface of the organic barrier layer away from the light emitting diode is a flat surface.
4. The display device according to claim 3, wherein the inorganic barrier layer covers and is in direct contact with the light emitting diode, and the organic barrier layer is disposed above the inorganic barrier layer.
5. The display device according to claim 4, wherein the color conversion layer is disposed over the first surface.
6. The display device according to claim 3, wherein the organic barrier layer covers over and in direct contact with the light emitting diode, and the inorganic barrier layer covers over the organic barrier layer.
7. The display device according to claim 6, wherein the inorganic barrier layer comprises a flat portion located in the isolation trench, wherein the flat portion is stacked over the first surface and opposite to the light emitting diode in a thickness direction of the substrate.
8. The display device according to claim 7, wherein the color conversion layer is provided above the flat portion.
9. The display device according to claim 1, wherein the protective layer comprises a first inorganic layer, an intermediate organic layer, and a second inorganic layer stacked from bottom to top, the first inorganic layer covering the color conversion layer.
10. A method of manufacturing a display panel, the method being for manufacturing a display panel according to any one of claims 1 to 9, the method comprising:
providing a substrate, wherein one side of the substrate comprises an electrode and a light emitting diode electrically connected with the electrode;
forming an isolation layer on one side of the substrate, wherein the isolation layer is provided with an isolation groove, and the light-emitting diode is exposed from the isolation groove;
forming a blocking structure on one side of the light emitting diode far away from the substrate;
forming a color conversion layer on one side of the blocking structure far away from the light emitting diode; and
forming a protective layer on one side of the color conversion layer away from the substrate;
wherein, separation structure includes first barrier layer and second barrier layer, the second barrier layer includes the separation unit, the separation unit is located in the isolation groove, the separation unit is kept away from the first surface of emitting diode one side is the even surface.
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| CN202111145957.1A CN113937123A (en) | 2021-09-28 | 2021-09-28 | Display device and manufacturing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114512588A (en) * | 2022-02-25 | 2022-05-17 | 苏州芯聚半导体有限公司 | Micro light-emitting diode structure, preparation method and display panel |
| CN117954558A (en) * | 2024-03-26 | 2024-04-30 | 季华实验室 | Preparation method of display panel and display panel |
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2021
- 2021-09-28 CN CN202111145957.1A patent/CN113937123A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114512588A (en) * | 2022-02-25 | 2022-05-17 | 苏州芯聚半导体有限公司 | Micro light-emitting diode structure, preparation method and display panel |
| CN114512588B (en) * | 2022-02-25 | 2023-06-16 | 苏州芯聚半导体有限公司 | Micro light emitting diode structure, manufacturing method and display panel |
| CN117954558A (en) * | 2024-03-26 | 2024-04-30 | 季华实验室 | Preparation method of display panel and display panel |
| CN117954558B (en) * | 2024-03-26 | 2024-06-14 | 季华实验室 | Preparation method of display panel and display panel |
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