CN112599552B - Micro light emitting diode display panel and preparation method thereof - Google Patents
Micro light emitting diode display panel and preparation method thereof Download PDFInfo
- Publication number
- CN112599552B CN112599552B CN202011471134.3A CN202011471134A CN112599552B CN 112599552 B CN112599552 B CN 112599552B CN 202011471134 A CN202011471134 A CN 202011471134A CN 112599552 B CN112599552 B CN 112599552B
- Authority
- CN
- China
- Prior art keywords
- isolation
- emitting diode
- light emitting
- micro light
- functional layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title description 4
- 238000002955 isolation Methods 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 50
- 239000002346 layers by function Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000002096 quantum dot Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention discloses a micro light emitting diode display panel and a manufacturing method thereof, wherein the micro light emitting diode display panel comprises: a substrate; the micro light-emitting diode array is arranged on the surface of one side of the substrate, and isolation grooves are formed between any adjacent micro light-emitting diodes in the micro light-emitting diode array; a plurality of isolation columns, each isolation column being located in a corresponding isolation groove; the shading structure is formed on the top surface and the side surface of the corresponding isolation column; wherein the top surface faces the light emitting surface of the micro light emitting diode, and the side surface is arranged around the top surface.
Description
Technical Field
The invention relates to a display panel of a micro light emitting diode and a preparation method thereof.
Background
A micro light emitting diode display panel (Micro Light Emitting Diode Display, μled) is a new generation of display panels that use micro light emitting diodes as the light emitting components of the display. The technology is to thin, miniaturize and array the LED to a single LED, the size is only 1-10 μm, then transfer the LED to the circuit substrate in batch, and after surface adhesion, the LED and the electrode on the circuit substrate, the transistor, the upper electrode, the protective layer and the like together form the LED panel required by the micro LED display.
Currently, colorization of Micro light emitting diode (Micro LED) display panels generally includes: r, G, B Micro LED chips with different colors are placed in one pixel of the display panel; or placing three blue Micro LED chips in one pixel of the display panel, and performing color conversion on R, G quantum dot layers arranged on two blue Micro LED chips, so that the colorized display of the Micro LED display panel is realized.
In addition, the pixel structure further comprises a shading structure, and the shading structure is arranged between any two Micro LED chips and used for avoiding light crosstalk in the pixel structure. Since the Micro LED chips and/or the quantum layers themselves are thick, and the Gap between any two Micro LED chips is relatively small, a high and narrow light shielding structure is required.
The prior method for forming the shading structure is to design a layer of thicker photoresist on a substrate, and then obtain the shading structure by means of exposure and development. Because the light absorption of the photoresist can not reach the bottom of the photoresist in the exposure process, the photoresist is easy to be incompletely etched, and a high and narrow shading structure is not easy to obtain.
Disclosure of Invention
The invention aims to provide a micro light emitting diode display panel and a manufacturing method thereof, which solve the problem that the existing manufacturing process of the micro light emitting diode display panel can not obtain a high and narrow shading structure by adopting a mode of combining a separation column and a shading structure.
In order to achieve one of the above objects, an embodiment of the present invention provides a micro light emitting diode display panel, including: a substrate; the micro light-emitting diode array is arranged on the surface of one side of the substrate, and isolation grooves are formed between any adjacent micro light-emitting diodes in the micro light-emitting diode array; a plurality of isolation columns, each isolation column being located in a corresponding isolation groove; the shading structure is formed on the top surface and the side surface of the corresponding isolation column; wherein the top surface faces the light emitting surface of the micro light emitting diode, and the side surface is arranged around the top surface.
As an optional technical solution, the substrate further includes a low surface energy functional layer, the low surface energy functional layer is disposed on a surface of the micro light emitting diode array, which is far away from the substrate, and the low surface energy functional layer has a slot corresponding to the isolation slot, wherein the isolation column protrudes from the slot to the substrate.
Alternatively, the low surface energy functional layer is selected from a silicon dioxide functional layer, a silicon nitride functional layer or an aluminum oxide functional layer.
Alternatively, the grooves are formed by a patterning process.
As an alternative solution, the size of the slot is smaller than the size of the isolation slot.
The invention also provides a manufacturing method of the micro light emitting diode display panel, which comprises the following steps:
s1, providing a substrate, wherein the surface of one side of the substrate comprises a micro light emitting diode array, the micro light emitting diode array comprises a plurality of micro light emitting diodes, and an isolation groove is arranged between any two micro light emitting diodes;
s2, forming an isolation layer on the substrate, wherein the isolation layer covers the micro light emitting diode array, patterning the isolation layer to form a plurality of isolation columns, and each isolation column is located in a corresponding isolation groove; and
s3, forming a shading structure on the plurality of isolation columns, wherein the shading structure covers the top surfaces and the side surfaces of the isolation columns.
As an optional technical solution, forming the light shielding structure on the plurality of isolation columns in S3 further includes:
s31, forming a shading material layer on the substrate to cover the micro light emitting diode array and the isolation columns;
s32, patterning the shading material layer, and removing the part of the shading material layer corresponding to the micro light emitting diode to form a shading structure covered on the isolation column.
As an optional technical solution, forming the isolation layer in S2 further includes:
forming a low surface energy functional layer on the substrate, wherein the low surface energy functional layer covers the micro light emitting diode array; and
and patterning the low surface energy functional layer to form a plurality of grooves, wherein the grooves are in one-to-one correspondence with the isolation grooves.
Alternatively, the low surface energy functional layer is selected from a silicon dioxide functional layer, a silicon nitride functional layer or an aluminum oxide functional layer.
As an optional technical solution, the step S3 further includes:
forming a light shielding material layer on the substrate and covering the low surface energy functional layer and the isolation columns; and
and heating and curing, wherein the shading materials are gathered towards the isolation columns to form shading structures which are covered on the isolation columns.
Compared with the prior art, the micro light emitting diode display panel and the manufacturing method thereof provided by the invention have the advantages that the isolation column with larger height and width is obtained in advance, and the shading structure is formed on the outer side of the isolation column, so that the high and narrow shading structure can be accurately manufactured, the technical problems of unclear pixels, reduced contrast and the like caused by light leakage, reflection and the like of the micro light emitting diode in the micro light emitting diode display panel are solved, and the special technical effects of improving the definition and contrast of the pixels are further achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional view of a micro led display panel according to an embodiment of the invention.
Fig. 2 is a flowchart of a method for manufacturing a micro light emitting diode display panel according to an embodiment of the invention.
Fig. 3 to 9 are schematic views illustrating a manufacturing process of a micro light emitting diode display panel according to an embodiment of the invention.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the invention and structural, methodological, or functional modifications of these embodiments that may be made by one of ordinary skill in the art are included within the scope of the invention.
As shown in fig. 1, in one embodiment of the present invention, a micro light emitting diode display panel 100 is provided, which includes a substrate 10, a micro light emitting diode array 20 formed on the substrate 10, and isolation grooves 24 between any adjacent micro light emitting diodes in the micro light emitting diode array 20; a plurality of isolation posts 30, each isolation post 30 disposed in a corresponding isolation slot 24; and a light shielding structure 40, wherein the light shielding structure 40 is formed on the top surface and the side surface of the corresponding isolation column 30, the top surface protrudes towards the light emitting surface of the micro light emitting diode, and the side surface is arranged around the top surface.
In this embodiment, a plurality of isolation pillars 30 are formed on the substrate 10 corresponding to the isolation trenches 24, and then a light shielding structure 40 is formed on the outer surface of the isolation pillars 30, preferably, the isolation pillars 30 may be made of non-light shielding material, so that the isolation layer made of non-light shielding material can obtain a structure with a large aspect ratio, i.e. a high and narrow structure through a patterning process; and then the top surface and the side surface of the isolation column are covered with a shading structure, and the shading structure covers the isolation column as a whole and can be regarded as a high and narrow shading structure. In other words, the isolation column is covered by the light shielding structure to form a high and narrow light shielding structure, so that the problem that the high and narrow light shielding structure cannot be prepared by directly patterning thicker light shielding photoresist in the conventional micro light emitting diode panel is solved.
In addition, since the isolation pillars 30 raise the portion of the light shielding structure 40 located in the isolation trench 24, the thickness of the film layer of the light shielding structure 40 formed on the isolation pillars 30 can be reduced, and thus, the problem of incomplete etching of the light shielding material (or light absorbing material) can be avoided during the patterning process.
As shown in fig. 1, the micro light emitting diode array 20 includes a plurality of pixels, each including at least 3 sub-pixels, i.e., a first sub-pixel 21, a second sub-pixel 22, and a third sub-pixel 23. In the present embodiment, the first sub-pixel 21, the second sub-pixel 22 and the third sub-pixel 23 are respectively provided with blue light micro-leds, but not limited thereto. In other embodiments of the present invention, the first sub-pixel, the second sub-pixel, and the third sub-pixel may be a red light micro-led, a green light micro-led, and a blue light micro-led, respectively.
When the first sub-pixel 21, the second sub-pixel 22 and the third sub-pixel 23 are blue light micro light emitting diodes, the red quantum dot layer 61 and the green quantum dot layer 62 may be disposed on any two sub-pixels, respectively, so that the micro light emitting diode display panel 100 can perform colorized display.
As shown in fig. 1, the micro light emitting diode display panel 100 further includes a low surface energy functional layer 50 formed on a surface of the micro light emitting diode array 20 on a side away from the substrate 10, the low surface energy functional layer 50 having a groove 51 corresponding to the isolation groove 24, or the groove 51 being located in the isolation groove 24. Wherein the spacer 30 protrudes from the slot 51 onto the substrate 10.
In this embodiment, the size of the slot 51 is smaller than the size of the isolation slot 24. That is, a portion of the low surface functional layer 50 is present in the isolation trench 24, which aims to promote aggregation of the light shielding structure 40 toward the isolation column 30.
Specifically, the surface energy of the spacer 30 and the surface energy of the light shielding structure 40 are the same or approximately the same, and are made of high surface energy materials, so that when the light shielding material with high surface energy is coated on the low surface functional layer 50, the light shielding material is not easy to spread on the surface of the low surface functional layer 50, and is gathered towards the spacer 30 with high surface energy, and then the light shielding material gathered on the surface of the spacer 50 is solidified to form the light shielding structure 40 through a heating process.
In a preferred embodiment, the low surface energy functional layer 50 is selected from a silicon dioxide functional layer, a silicon nitride functional layer, or an aluminum oxide functional layer.
In other embodiments of the present invention, the light shielding structure formed on the isolation pillar may be obtained through a patterning process. Specifically, a light-shielding photoresist is coated on a substrate to cover the micro light-emitting diode array and the isolation column, wherein after exposure and development, the part of the light-shielding photoresist corresponding to the micro light-emitting diode is removed, the part of the light-shielding photoresist corresponding to the isolation column is reserved, and the part of the light-shielding photoresist corresponding to the isolation column is cured to form a light-shielding structure.
As shown in fig. 2, the present invention further provides a method 200 for manufacturing a micro light emitting diode display panel, which includes:
s1, providing a substrate, wherein the surface of one side of the substrate comprises a micro light emitting diode array, the micro light emitting diode array comprises a plurality of micro light emitting diodes, and an isolation groove is arranged between any two micro light emitting diodes;
s2, forming an isolation layer on the substrate, wherein the isolation layer covers the micro light emitting diode array, patterning the isolation layer to form a plurality of isolation columns, and each isolation column is located in a corresponding isolation groove; and
s3, forming a shading structure on the plurality of isolation columns, wherein the shading structure covers the top surfaces and the side surfaces of the isolation columns.
The manufacturing process of the micro light emitting diode display panel 100 shown in fig. 1 by the manufacturing method 200 of the micro light emitting diode display panel shown in fig. 2 will be described in detail below with reference to fig. 3 to 9.
As shown in fig. 3, a substrate 10 is provided, and a micro light emitting diode array 20 is included on a surface of one side of the substrate 10, and an isolation groove 24 is provided between any two micro light emitting diodes in the micro light emitting diode array 20.
The substrate 10 is, for example, a TFT substrate, and the micro light emitting diode array 20 is, for example, transferred onto the TFT substrate by a mass transfer method, where the micro light emitting diode array 20 forms a plurality of pixels, each pixel includes at least 3 sub-pixels, the 3 sub-pixels correspond to 3 micro light emitting diodes, and an isolation groove 24 is included between any two micro light emitting diodes.
As shown in fig. 4, a low surface energy functional material 52 is formed on the surface of the micro light emitting diode array 20 on the side remote from the substrate 10. The low surface function material 52 is selected from silicon dioxide, silicon nitride or aluminum oxide, for example, and may be formed by chemical vapor deposition.
As shown in fig. 5, the patterned low surface energy functional material 52 forms the trenches 51 and the low surface functional layer 50; wherein the slots 51 are arranged corresponding to the isolation trenches 24, and the size of the slots 51 is slightly smaller than the size of the isolation trenches 24, so that part of the low surface energy functional layer 50 is located in the isolation trenches 24.
As shown in fig. 6 and 7, the isolation layer 31 is coated on the low surface function layer 50, the photoresist is coated on the isolation layer 31, and then the isolation layer corresponding to the micro light emitting diode is removed by exposure and development, so as to form a plurality of isolation pillars 30, wherein the isolation pillars 30 are located in the isolation trenches 24, and the isolation pillars 30 protrude from the trenches 51 to one side of the substrate 10.
The material of the isolation layer 31 is, for example, a high surface energy material. The isolation layer 31 is, for example, a non-light absorbing organic film layer including, but not limited to, polyimide, and the like.
As shown in fig. 8 and 9, the light shielding material layer 41 is coated onto the side surface of the low surface energy functional layer 50 and the spacer 30 away from the substrate 10, wherein the surface energy of the light shielding material layer 41 is the same as or similar to the surface energy of the spacer 31.
The light shielding material layer 41 is heat-treated, and the light shielding material layer 41 is gathered toward the isolation pillars 30 and cured on the side surfaces and the top surfaces of the isolation pillars 30 to form the light shielding structure 40.
In a preferred embodiment, the light-shielding material layer 41 is selected from, for example, light-shielding ink.
The micro light emitting diode display panel 100 is obtained by forming the red quantum dot layer 61 and the green quantum dot layer 62 on the first sub-pixel 21 and the second sub-pixel 22 of the micro light emitting diode array 20 of the micro light emitting diode display panel shown in fig. 9, respectively.
It should be noted that, in other embodiments of the present invention, the micro light emitting diode display panel 100 may not include a low surface energy functional layer, and only includes the isolation pillars located in the isolation trenches and the light shielding structures formed outside the isolation pillars.
At this time, the corresponding manufacturing method is simplified in that an isolation layer is formed on a substrate with a micro light emitting diode array, the isolation layer is patterned, a plurality of isolation columns are formed, and each isolation column is located in a corresponding isolation groove; then, coating a shading material layer to one side of the micro light emitting diode array far away from the substrate, wherein the shading material layer covers a plurality of micro light emitting diodes and a plurality of isolation columns; and continuing to pattern the shading material layer, removing the shading material layer corresponding to the micro light emitting diode, reserving the shading material layer outside the isolation column, and then solidifying the shading material layer outside the reserved isolation column to form a shading structure. The thickness of the light shielding material layer can be obviously smaller than that of the isolation column, so that the problem of incomplete etching is not easy to occur in the patterning process.
The isolation column is positioned in the isolation groove to heighten the shading structure, so that the same technical effect as the existing narrow and high shading layer can be achieved, and the shading structure provided by the invention has the advantage of easiness in preparation.
In summary, the micro light emitting diode display panel and the manufacturing method thereof provided by the invention are characterized in that the isolation column with larger height and width is obtained in advance, and then the shading structure is formed on the outer side of the isolation column, so that the high and narrow shading structure can be accurately manufactured, the technical problems of unclear pixels, reduced contrast and the like caused by light leakage, reflection and the like of the micro light emitting diode in the micro light emitting diode display panel are solved, and the special technical effects of improving the definition and contrast of the pixels are further achieved.
It should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is for clarity only, and that the skilled artisan should recognize that the embodiments may be combined as appropriate to form other embodiments that will be understood by those skilled in the art.
The above list of detailed descriptions is only specific to practical embodiments of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the spirit of the present invention should be included in the scope of the present invention.
Claims (9)
1. A micro light emitting diode display panel, the micro light emitting diode display panel comprising:
a substrate;
the micro light-emitting diode array is arranged on the surface of one side of the substrate, and isolation grooves are formed between any adjacent micro light-emitting diodes in the micro light-emitting diode array;
a plurality of isolation columns, each isolation column being located in a corresponding isolation groove, the isolation columns being of a non-light-shielding material; and
the light shielding structures are formed on the top surfaces and the side surfaces of the corresponding isolation columns and are made of light shielding materials;
the light emitting surface of the micro light emitting diode is faced by the top surface, the side surface is arranged around the top surface, the substrate further comprises a low surface energy functional layer, the low surface energy functional layer is arranged on the surface, far away from one side of the substrate, of the micro light emitting diode array, the low surface energy functional layer is provided with a groove corresponding to the isolation groove, the isolation column protrudes out of the substrate from the groove, and the isolation column and the light shielding structure are made of high surface energy materials.
2. The micro light emitting diode display panel of claim 1, wherein the low surface energy functional layer is selected from a silicon dioxide functional layer, a silicon nitride functional layer, or an aluminum oxide functional layer.
3. The micro light emitting diode display panel of claim 1, wherein the grooves are formed by a patterning process.
4. The micro light emitting diode display panel of claim 1, wherein the size of the slot is smaller than the size of the isolation slot.
5. A method for manufacturing a micro light emitting diode display panel, the method comprising:
s1, providing a substrate, wherein the surface of one side of the substrate comprises a micro light emitting diode array, the micro light emitting diode array comprises a plurality of micro light emitting diodes, and an isolation groove is arranged between any two micro light emitting diodes;
s2, forming an isolation layer on the substrate, wherein the isolation layer covers the micro light emitting diode array, patterning the isolation layer to form a plurality of isolation columns, each isolation column is located in a corresponding isolation groove, and the isolation columns are non-shading materials; and
s3, forming a shading structure on the plurality of isolation columns, wherein the shading structure covers the top surface and the side surfaces of the isolation columns, and the shading structure is formed by shading materials;
the substrate is further provided with a low-surface-energy functional layer, the low-surface-energy functional layer is arranged on the surface of one side, far away from the substrate, of the micro light-emitting diode array, the low-surface-energy functional layer is provided with a groove corresponding to the isolation groove, the isolation column protrudes out of the substrate from the groove, and the isolation column and the shading structure are made of high-surface-energy materials.
6. The method of claim 5, wherein forming S3 light shielding structures on the plurality of spacers further comprises:
s31, forming a shading material layer on the substrate to cover the micro light emitting diode array and the isolation columns;
s32, patterning the shading material layer, and removing the part of the shading material layer corresponding to the micro light emitting diode to form a shading structure covered on the isolation column.
7. The method of claim 5, wherein forming the spacer layer in S2 further comprises:
forming a low surface energy functional layer on the substrate, wherein the low surface energy functional layer covers the micro light emitting diode array; and
and patterning the low surface energy functional layer to form a plurality of grooves, wherein the grooves are in one-to-one correspondence with the isolation grooves.
8. The method of claim 7, wherein the low surface energy functional layer is selected from the group consisting of a silicon dioxide functional layer, a silicon nitride functional layer, and an aluminum oxide functional layer.
9. The method according to claim 7, wherein the step S3 further comprises:
forming a light shielding material layer on the substrate and covering the low surface energy functional layer and the isolation columns; and
and heating and curing, wherein the shading materials are gathered towards the isolation columns to form shading structures which are covered on the isolation columns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011471134.3A CN112599552B (en) | 2020-12-14 | 2020-12-14 | Micro light emitting diode display panel and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011471134.3A CN112599552B (en) | 2020-12-14 | 2020-12-14 | Micro light emitting diode display panel and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112599552A CN112599552A (en) | 2021-04-02 |
| CN112599552B true CN112599552B (en) | 2024-02-20 |
Family
ID=75195740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011471134.3A Active CN112599552B (en) | 2020-12-14 | 2020-12-14 | Micro light emitting diode display panel and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112599552B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116529885A (en) * | 2021-11-30 | 2023-08-01 | 京东方科技集团股份有限公司 | Light-emitting substrate, preparation method thereof and display device |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015128027A (en) * | 2013-12-27 | 2015-07-09 | シャープ株式会社 | Organic el device and display device |
| CN107170773A (en) * | 2017-05-23 | 2017-09-15 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
| CN207529966U (en) * | 2016-11-14 | 2018-06-22 | 首尔伟傲世有限公司 | Light emitting diode with offside reflection layer |
| CN108345142A (en) * | 2017-01-25 | 2018-07-31 | 群创光电股份有限公司 | Show equipment |
| JP2019102664A (en) * | 2017-12-04 | 2019-06-24 | 株式会社ブイ・テクノロジー | Method for manufacturing led display panel |
| CN110416246A (en) * | 2019-07-31 | 2019-11-05 | 云谷（固安）科技有限公司 | A kind of LED chip array and display panel |
| CN110911460A (en) * | 2019-11-25 | 2020-03-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110992841A (en) * | 2019-11-06 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
| CN111370547A (en) * | 2020-03-14 | 2020-07-03 | 厦门友来微电子有限公司 | Micro LED chip without optical crosstalk |
| CN111430403A (en) * | 2020-03-31 | 2020-07-17 | 上海天马微电子有限公司 | Display panel and display device |
| CN111584541A (en) * | 2019-02-18 | 2020-08-25 | 三星显示有限公司 | Display device |
| CN111725428A (en) * | 2020-06-30 | 2020-09-29 | 上海天马微电子有限公司 | Display panel and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104521012B (en) * | 2012-08-07 | 2018-04-24 | 首尔伟傲世有限公司 | Wafer level led array and its manufacture method |
-
2020
- 2020-12-14 CN CN202011471134.3A patent/CN112599552B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015128027A (en) * | 2013-12-27 | 2015-07-09 | シャープ株式会社 | Organic el device and display device |
| CN207529966U (en) * | 2016-11-14 | 2018-06-22 | 首尔伟傲世有限公司 | Light emitting diode with offside reflection layer |
| CN108345142A (en) * | 2017-01-25 | 2018-07-31 | 群创光电股份有限公司 | Show equipment |
| CN107170773A (en) * | 2017-05-23 | 2017-09-15 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
| JP2019102664A (en) * | 2017-12-04 | 2019-06-24 | 株式会社ブイ・テクノロジー | Method for manufacturing led display panel |
| CN111584541A (en) * | 2019-02-18 | 2020-08-25 | 三星显示有限公司 | Display device |
| CN110416246A (en) * | 2019-07-31 | 2019-11-05 | 云谷（固安）科技有限公司 | A kind of LED chip array and display panel |
| CN110992841A (en) * | 2019-11-06 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
| CN110911460A (en) * | 2019-11-25 | 2020-03-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111370547A (en) * | 2020-03-14 | 2020-07-03 | 厦门友来微电子有限公司 | Micro LED chip without optical crosstalk |
| CN111430403A (en) * | 2020-03-31 | 2020-07-17 | 上海天马微电子有限公司 | Display panel and display device |
| CN111725428A (en) * | 2020-06-30 | 2020-09-29 | 上海天马微电子有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112599552A (en) | 2021-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111326562B (en) | Quantum dot display panel and preparation method thereof | |
| US8902140B2 (en) | Color conversion filter panel for color organic electroluminescent display and color organic electroluminescent display | |
| US10928565B2 (en) | Color film substrate, fabricating method therefor, display panel and display device | |
| CN108963100A (en) | Color membrane substrates and preparation method thereof, display panel | |
| CN106098742A (en) | Organic light-emitting display device and manufacture method | |
| US20210336100A1 (en) | Display device and manufacturing method of display device | |
| CN108878497A (en) | Display base plate and manufacturing method, display device | |
| JP2609339B2 (en) | Method for manufacturing color filter | |
| KR102206530B1 (en) | Display substrate and its manufacturing method, display device | |
| KR20140030018A (en) | Display panel and method for manufacturing display panel | |
| CN105679796A (en) | Display panel and preparation method | |
| CN112599552B (en) | Micro light emitting diode display panel and preparation method thereof | |
| CN107359183B (en) | Top-emitting full-color silicon-based organic electroluminescent micro-display and manufacturing process thereof | |
| CN113097242A (en) | High-resolution micro-display structure and preparation method thereof | |
| CN114566581A (en) | Display panel and method for manufacturing display panel | |
| CN107785401B (en) | Manufacturing method of color film substrate, color film substrate and display panel | |
| US10571804B2 (en) | Method of fabricating a color filter array using a multilevel structure | |
| CN111081685B (en) | Display device | |
| CN105765739A (en) | Polymer light emitting diode structure, manufacturing method, display substrate, and display device | |
| TWI778492B (en) | Display device | |
| KR101675843B1 (en) | Flat display device and method of fabricating the same | |
| CN114551495A (en) | Display device and method of manufacturing the same | |
| CN210092134U (en) | Silicon-based micro display screen | |
| CN117596918A (en) | Display panel | |
| CA2936473A1 (en) | Integrated micro-devices and method of assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |