CN112599552B - Microluminescent diode display panel and preparation method - Google Patents

Abstract

The invention discloses a micro-luminescent diode display panel and a manufacturing method. The micro-luminescent diode display panel includes: a substrate; a micro-luminescent diode array, the micro-luminescent diode array is arranged on the surface of one side of the substrate, In the micro-light-emitting diode array, there are isolation grooves between any adjacent micro-light-emitting diodes; a plurality of isolation columns, each isolation column is located in a corresponding isolation groove; and a light-shielding structure, the light-shielding structure is formed in the corresponding isolation The top surface and side surfaces of the column; wherein, the top surface faces the light-emitting surface of the micro-light emitting diode, and the side surfaces are arranged around the top surface.

Description

Microluminescent diode display panel and preparation method

Technical field

The invention relates to a micro-luminescent diode display panel and a preparation method.

Background technique

Micro Light Emitting Diode Display (μLED) is a new generation display panel that uses micro light emitting diodes as the light emitting component of the display. This technology thins, miniaturizes, and arrays LEDs into a single LED with a size of only 1 to 10 μm. The μ LEDs are then transferred to the circuit substrate in batches. After surface adhesion, they are connected to the electrodes and transistors on the circuit substrate. , upper electrode, protective layer, etc. together constitute the μLED panel required for micro-light emitting diode displays.

At present, the colorization of micro-light-emitting diode (Micro LED) display panels generally includes: placing three Micro LED chips of different colors, R, G, and B, in one pixel of the display panel; or, placing three micro LED chips in one pixel of the display panel. Three blue Micro LED chips are placed, and R and G quantum dot layers are set on two of the blue Micro LED chips for color conversion, thereby achieving color display of the Micro LED display panel.

In addition, the pixel structure also includes a light-shielding structure, which is provided between any two Micro LED chips to avoid optical crosstalk in the pixel structure. Since the Micro LED chip and/or the quantum layer itself are both thick, and the gap between any two Micro LED chips is relatively small, the light-shielding structure must be tall and narrow.

The existing method of forming a light-shielding structure is to design a thicker layer of photoresist on the substrate, and then obtain it through exposure and development. Due to the light absorption of the photoresist, light cannot reach the bottom of the photoresist during the exposure process. Therefore, it is easy to cause incomplete etching of the photoresist and it is difficult to obtain a tall and narrow light-shielding structure.

Contents of the invention

The purpose of the present invention is to provide a micro-light emitting diode display panel and a manufacturing method thereof, which adopts a combination of isolation columns and light-shielding structures to overcome the problem that the existing micro-light-emitting diode display panel manufacturing technology cannot obtain a high and narrow light-shielding structure.

In order to achieve one of the above-mentioned objects of the invention, one embodiment of the present invention provides a micro-luminescent diode display panel. The micro-luminescent diode display panel includes: a substrate; a micro-luminescent diode array, the micro-luminescent diode array is disposed on the substrate. On the surface of the bottom side, in the micro-light emitting diode array, there are isolation grooves between any adjacent micro-light emitting diodes; a plurality of isolation columns, each isolation column is located in the corresponding isolation groove; and a light-shielding structure, the The light-shielding structure is formed on the top surface and the side surface of the corresponding isolation column; wherein, the top surface faces the light-emitting surface of the micro-light emitting diode, and the side surface is arranged around the top surface.

As an optional technical solution, the substrate further includes a low surface energy functional layer. The low surface energy functional layer is disposed on a surface of the micro-light emitting diode array away from the substrate. The low surface energy layer The functional layer has a groove corresponding to the isolation groove, wherein the isolation pillar protrudes from the substrate from the groove.

As an optional technical solution, the low surface energy functional layer is selected from a silicon dioxide functional layer, a silicon nitride functional layer or an aluminum oxide functional layer.

As an optional technical solution, the grooves are formed through a patterning process.

As an optional technical solution, the size of the groove is smaller than the size of the isolation groove.

The invention also provides a method for manufacturing a micro-luminescent diode display panel. The manufacturing method includes:

S1. Provide a substrate. The surface of one side of the substrate includes a micro-luminescent diode array. The micro-luminescent diode array includes a plurality of micro-luminescent diodes, and an isolation groove is provided between any two micro-luminescent diodes;

S2. Form an isolation layer on the substrate, the isolation layer covers the micro-light emitting diode array, pattern the isolation layer to form a plurality of isolation pillars, each isolation pillar is located in a corresponding isolation trench; and

S3. Form a light-shielding structure on the plurality of isolation columns, and the light-shielding structure covers the top and side surfaces of the isolation columns.

As an optional technical solution, S3 forming a light-shielding structure on the plurality of isolation columns also includes:

S31. Form a light-shielding material layer on the substrate to cover the micro-light emitting diode array and the plurality of isolation pillars;

S32. Pattern the light-shielding material layer, and remove the portion of the light-shielding material layer corresponding to the micro-light-emitting diode to form a light-shielding structure covering the isolation pillar.

As an optional technical solution, forming between the isolation layers in S2 also includes:

Forming a low surface energy functional layer on the substrate, the low surface energy functional layer covering the micro-light emitting diode array; and

The low surface energy functional layer is patterned to form a plurality of grooves, and the plurality of grooves correspond to the plurality of isolation grooves one by one.

As an optional technical solution, the low surface energy functional layer is selected from a silicon dioxide functional layer, a silicon nitride functional layer or an aluminum oxide functional layer.

As an optional technical solution, the S3 also includes:

Forming a light-shielding material layer on the substrate and covering the low surface energy functional layer and the plurality of isolation pillars; and

After heating and solidification, the light-shielding material gathers toward the isolation column to form a light-shielding structure covering the isolation column.

Compared with the existing technology, the present invention provides a micro-light emitting diode display panel and a manufacturing method thereof. Isolating pillars with a large aspect ratio are obtained in advance, and then a light-shielding structure is formed on the outside of the isolating pillar, so as to accurately produce a high-height display panel. The narrow light-shielding structure solves the technical problems of unclear pixels and reduced contrast caused by light leakage and reflection of micro-luminescent diodes in micro-luminescent diode display panels, thereby achieving special technical effects such as improving pixel clarity and contrast.

Description of the drawings

In order to more clearly explain the specific embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings that need to be used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description The drawings illustrate some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting any creative effort.

FIG. 1 is a schematic cross-sectional view of a micro-light emitting diode display panel according to an embodiment of the present invention.

FIG. 2 is a flow chart of a method for manufacturing a micro-light emitting diode display panel in an embodiment of the present invention.

3 to 9 are schematic diagrams of the manufacturing process of a micro-light emitting diode display panel according to an embodiment of the present invention.

Detailed ways

The present invention will be described in detail below with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention. Structural, method, or functional changes made by those of ordinary skill in the art based on these embodiments are all included in the protection scope of the present invention.

As shown in Figure 1, one embodiment of the present invention provides a micro-light emitting diode display panel 100, which includes a substrate 10, a micro-light emitting diode array 20 formed on the substrate 10, and any adjacent ones of the micro-light emitting diode array 20. There are isolation trenches 24 between the micro-luminescent diodes; a plurality of isolation pillars 30, each isolation pillar 30 is arranged in the corresponding isolation trench 24; and a light-shielding structure 40, the light-shielding structure 40 is formed on the top surface of the corresponding isolation pillar 30 and Side surfaces, wherein the top surface protrudes toward the light-emitting surface of the micro-light emitting diode, and the side surfaces are arranged around the top surface.

In this embodiment, a plurality of isolation pillars 30 are first formed on the substrate 10 at the portion corresponding to the isolation trench 24, and then a light-shielding structure 40 is formed on the outer surface of the isolation pillars 30. Preferably, the isolation pillars 30 can be made of non-light-shielding material. Therefore, the isolation layer formed of non-light-shielding material can be patterned to obtain a structure with a large aspect ratio, that is, a tall and narrow structure; then the top and side surfaces of the isolation column are covered with a light-shielding structure, and the light-shielding structure covers The isolation column as a whole can be considered as a tall, narrow light-blocking structure. In other words, in the present invention, a tall and narrow light-shielding structure can be formed by covering the isolation pillars with a light-shielding structure, thereby overcoming the problem that existing micro-luminescent display diode panels cannot be produced by directly patterning a thicker light-shielding photoresist. The problem of shading structure.

In addition, since the isolation pillar 30 raises the portion of the light-shielding structure 40 located in the isolation trench 24, the thickness of the film layer of the light-shielding structure 40 formed on the isolation pillar 30 can be reduced. Therefore, the light-shielding material ( Or the problem of incomplete etching of light-absorbing materials.

As shown in FIG. 1 , the micro-light emitting diode array 20 includes a plurality of pixels, and each pixel includes at least three sub-pixels, namely, a first sub-pixel 21 , a second sub-pixel 22 and a third sub-pixel 23 . In this embodiment, the first sub-pixel 21, the second sub-pixel 22 and the third sub-pixel 23 are respectively micro-luminescent diodes with blue light, but are not limited to this. In other embodiments of the present invention, the first sub-pixel, the second sub-pixel and the third sub-pixel may be red light micro-light emitting diodes, green light micro-light emitting diodes and blue light micro-light emitting diodes respectively.

When the first sub-pixel 21, the second sub-pixel 22 and the third sub-pixel 23 are respectively blue light-emitting diodes, a red quantum dot layer 61 and a green quantum dot layer 62 can be respectively provided on any two sub-pixels, so that The micro-LED display panel 100 is capable of color display.

As shown in FIG. 1 , the microluminescent diode display panel 100 also includes a low surface energy functional layer 50 , which is formed on the surface of the microluminescent diode array 20 away from the substrate 10 . The low surface energy functional layer 50 corresponds to the isolation trench 24 and has The groove 51 , or groove 51 , is located in the isolation groove 24 . Wherein, the isolation pillar 30 protrudes from the slot 51 onto the substrate 10 .

In this embodiment, the size of the slot 51 is smaller than the size of the isolation groove 24 . That is, there is part of the low surface functional layer 50 in the isolation groove 24 , and its purpose is to promote the light-shielding structure 40 to gather toward the isolation pillar 30 .

Specifically, the surface energy of the isolation pillar 30 and the surface energy of the light-shielding structure 40 are the same or approximately the same, and both are made of high surface energy materials. Therefore, when a high surface energy light-shielding material is coated on the low surface functional layer 50, It is not easy to spread on the surface of the low surface functional layer 50 and will gather toward the isolation pillars 30 with high surface energy. After a heating process, the light-shielding material gathered on the surface of the isolation pillars 50 solidifies to form the light-shielding structure 40 .

In a preferred embodiment, the low surface energy functional layer 50 is selected from a silicon dioxide functional layer, a silicon nitride functional layer or an aluminum oxide functional layer.

In other embodiments of the present invention, the light-shielding structure formed on the isolation pillar may be obtained through a patterning process. Specifically, a light-shielding photoresist is coated on the substrate to cover the micro-light-emitting diode array and the isolation pillar. After exposure and development, the light-shielding photoresist is removed corresponding to the micro-light-emitting diode, and the light-shielding photoresist is retained corresponding to the micro-light-emitting diode. The part of the isolation pillar is cured to retain the light-shielding photoresist corresponding to the part of the isolation pillar to form a light-shielding structure.

As shown in Figure 2, the present invention also provides a manufacturing method 200 of a micro-light emitting diode display panel, which includes:

S1. Provide a substrate. The surface of one side of the substrate includes a micro-luminescent diode array. The micro-luminescent diode array includes a plurality of micro-luminescent diodes, and an isolation groove is provided between any two micro-luminescent diodes;

S2. Form an isolation layer on the substrate, the isolation layer covers the micro-light emitting diode array, pattern the isolation layer to form a plurality of isolation pillars, each isolation pillar is located in a corresponding isolation trench; and

S3. Form a light-shielding structure on the plurality of isolation columns, and the light-shielding structure covers the top and side surfaces of the isolation columns.

The manufacturing method 200 of the micro-light emitting diode display panel shown in FIG. 2 will be described in detail below with reference to FIGS. 3 to 9 . The manufacturing process of the micro-light emitting diode display panel 100 shown in FIG. 1 will be described in detail.

As shown in FIG. 3 , a substrate 10 is provided. A micro-light emitting diode array 20 is included on one side of the substrate 10 . There is an isolation trench 24 between any two micro-light emitting diodes in the micro-light emitting diode array 20 .

Wherein, the substrate 10 is, for example, a TFT substrate, and the micro-luminescent diode array 20 is transferred to the TFT substrate, for example, through mass transfer. The micro-luminescent diode array 20 forms a plurality of pixels, each pixel including at least 3 sub-pixels, and 3 sub-pixels. Corresponding to three micro-light-emitting diodes, an isolation groove 24 is included between any two micro-light-emitting diodes.

As shown in FIG. 4 , a low surface energy functional material 52 is formed on the surface of the micro-light emitting diode array 20 on the side away from the substrate 10 . The low surface functional material 52 is selected from silicon dioxide, silicon nitride or aluminum oxide, for example, and can be formed by chemical vapor deposition.

As shown in Figure 5, the patterned low surface energy functional material 52 forms slots 51 and low surface functional layer 50; wherein the slots 51 are arranged corresponding to the isolation trenches 24, and the size of the slots 51 is slightly smaller than the size of the isolation trench 24. So that part of the low surface energy functional layer 50 is located in the isolation groove 24 .

As shown in Figures 6 and 7, the isolation layer 31 is coated on the low surface functional layer 50, the photoresist is coated on the isolation layer 31, and then the isolation layer corresponding to the micro-light emitting diode is removed through exposure and development to form There are a plurality of isolation pillars 30 . The isolation pillars 30 are located in the isolation trench 24 , and the isolation pillars 30 protrude from one side of the substrate 10 from the slot 51 .

The material of the isolation layer 31 is, for example, a high surface energy material. The isolation layer 31 is, for example, a non-light absorbing organic film layer, including but not limited to polyimide.

As shown in FIGS. 8 and 9 , the light-shielding material layer 41 is coated on the low surface energy functional layer 50 and the side surface of the isolation pillar 30 away from the substrate 10 , wherein the surface energy of the light-shielding material layer 41 is different from that of the isolation layer 31 . The surface energies are the same or similar.

The light-shielding material layer 41 is heat-treated, and the light-shielding material layer 41 is gathered toward the isolation pillar 30 and solidified on the side and top surfaces of the isolation pillar 30 to form the light-shielding structure 40 .

In a preferred embodiment, the light-shielding material layer 41 is selected from light-shielding ink, for example.

A micro-luminescent diode can be obtained by forming a red quantum dot layer 61 and a green quantum dot layer 62 respectively on the first sub-pixel 21 and the second sub-pixel 22 of the micro-luminescent diode array 20 of the micro-luminescent diode display panel shown in Figure 9 Display panel 100.

Of course, it should be noted that in other embodiments of the present invention, the micro-LED display panel 100 may not include a low surface energy functional layer, and may only include isolation pillars located in the isolation trenches and light-shielding structures formed outside the isolation pillars.

At this time, the corresponding manufacturing method is simplified as follows: forming an isolation layer on a substrate with a micro-light emitting diode array, patterning the isolation layer to form multiple isolation pillars, each isolation pillar is located in a corresponding isolation trench; then, coating The light-shielding material layer reaches the side of the micro-light-emitting diode array away from the substrate. The light-shielding material layer covers multiple micro-light-emitting diodes and multiple isolation columns; continue to pattern the light-shielding material layer, remove the light-shielding material layer corresponding to the micro-light-emitting diodes, and retain The light-shielding material layer outside the isolation column is then cured to retain the light-shielding material layer outside the isolation column to form a light-shielding structure. Among them, the film thickness of the light-shielding material layer can be significantly smaller than the film thickness of the isolation pillar. Therefore, the problem of incomplete etching is less likely to occur during the patterning process.

Since the isolation column raises the light-shielding structure located in the isolation groove, it can achieve the same technical effect as the existing "narrow and high" light-shielding layer. However, the above-mentioned light-shielding structure provided by the present invention has the advantage of being easy to prepare. Advantage.

In summary, the present invention provides a micro-luminescent diode display panel and a manufacturing method thereof. Isolating pillars with a large aspect ratio are obtained in advance, and then a light-shielding structure is formed on the outside of the isolation pillar, so as to accurately produce a tall and narrow light-shielding structure. , thereby solving technical problems such as unclear pixels and reduced contrast due to light leakage, reflection, etc. caused by micro-luminescent diodes in micro-luminescent diode display panels, thereby achieving special technical effects such as improving pixel clarity and contrast.

It should be understood that although this specification is described in terms of implementations, not each implementation only contains an independent technical solution. This description of the specification is only for the sake of clarity. Persons skilled in the art should take the specification as a whole and understand each individual solution. The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

The series of detailed descriptions listed above are only specific descriptions of feasible implementations of the present invention. They are not intended to limit the protection scope of the present invention. Any equivalent implementations or implementations that do not deviate from the technical spirit of the present invention are not intended to limit the protection scope of the present invention. All changes should be included in the protection scope of the present invention.

Claims (9)

1. A micro-luminescent diode display panel, characterized in that the micro-luminescent diode display panel includes: substrate; Micro-luminescent diode array, the micro-luminescent diode array is arranged on the surface of one side of the substrate, and in the micro-luminescent diode array, there are isolation grooves between any adjacent micro-luminescent diodes; A plurality of isolation columns, each isolation column is located in a corresponding isolation groove, the isolation column is a non-shielding material; and A light-shielding structure, the light-shielding structure is formed on the top and side surfaces of the corresponding isolation columns, and the light-shielding structure is formed of a light-shielding material; Wherein, the top surface faces the light-emitting surface of the micro-light emitting diode, the side surfaces are arranged around the top surface, and the substrate also includes a low surface energy functional layer, and the low surface energy functional layer is provided on the On the surface of the micro-light emitting diode array away from the side of the substrate, the low surface energy functional layer has slots corresponding to the isolation slots, wherein the isolation pillars protrude from the substrate from the slots, The isolation pillar and the light-shielding structure are both made of high surface energy materials. 2. The micro-luminescent diode display panel according to claim 1, wherein the low surface energy functional layer is selected from a silicon dioxide functional layer, a silicon nitride functional layer or an aluminum oxide functional layer. 3. The micro-light emitting diode display panel according to claim 1, wherein the groove is formed through a patterning process. 4. The micro-light emitting diode display panel according to claim 1, wherein the size of the groove is smaller than the size of the isolation groove. 5. A method of manufacturing a micro-luminescent diode display panel, characterized in that the manufacturing method includes: S1. Provide a substrate. The surface of one side of the substrate includes a micro-luminescent diode array. The micro-luminescent diode array includes a plurality of micro-luminescent diodes, and an isolation groove is provided between any two micro-luminescent diodes; S2. Form an isolation layer on the substrate. The isolation layer covers the micro-light emitting diode array. The isolation layer is patterned to form a plurality of isolation pillars. Each isolation pillar is located in a corresponding isolation groove. The isolation layer The columns are of non-shading material; and S3. Form a light-shielding structure on the plurality of isolation columns. The light-shielding structure covers the top and side surfaces of the isolation columns. The light-shielding structure is formed of a light-shielding material; The substrate also includes a low surface energy functional layer. The low surface energy functional layer is disposed on the surface of the micro-light emitting diode array away from the substrate. The low surface energy functional layer corresponds to the The isolation groove has a slot, wherein the isolation pillar protrudes from the substrate from the slot, and both the isolation pillar and the light-shielding structure are made of high surface energy materials. 6. The manufacturing method according to claim 5, characterized in that S3 forming a light-shielding structure on the plurality of isolation pillars further includes: S31. Form a light-shielding material layer on the substrate to cover the micro-light emitting diode array and the plurality of isolation pillars; S32. Pattern the light-shielding material layer, and remove the portion of the light-shielding material layer corresponding to the micro-light-emitting diode to form a light-shielding structure covering the isolation pillar. 7. The manufacturing method according to claim 5, wherein forming between the isolation layers in S2 further includes: Forming a low surface energy functional layer on the substrate, the low surface energy functional layer covering the micro-light emitting diode array; and The low surface energy functional layer is patterned to form a plurality of grooves, and the plurality of grooves correspond to the plurality of isolation grooves one by one. 8. The manufacturing method according to claim 7, wherein the low surface energy functional layer is selected from the group consisting of silicon dioxide functional layer, silicon nitride functional layer and aluminum oxide functional layer. 9. The production method according to claim 7, characterized in that said S3 further includes: Forming a light-shielding material layer on the substrate and covering the low surface energy functional layer and the plurality of isolation pillars; and After heating and solidification, the light-shielding material gathers toward the isolation column to form a light-shielding structure covering the isolation column.