CN107170876A - A kind of preparation method of Micro light-emitting diode displays part - Google Patents
A kind of preparation method of Micro light-emitting diode displays part Download PDFInfo
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- CN107170876A CN107170876A CN201710389639.7A CN201710389639A CN107170876A CN 107170876 A CN107170876 A CN 107170876A CN 201710389639 A CN201710389639 A CN 201710389639A CN 107170876 A CN107170876 A CN 107170876A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention discloses a kind of preparation method of Micro light-emitting diode displays part, quanta point material is coated on Micro LED chip arrays by the way of template is transferred, used quantum point grain diameter is smaller, light-emitting uniformity can be effectively improved, using the transfer template with recess patterns, the different recess for printing extremely transfer template that different quanta point materials are misplaced, transferred while different quanta point materials can be realized, while influencing each other between avoiding different quantum dots, using multiple transfer templates, the sequence for realizing different quanta point materials by the transfer that repeatedly misplaces is transferred, it efficiently avoid influencing each other between different quantum dots, improve high-resolution color display quality, transfer time is short simultaneously, it is easy to the quick production of high-volume.
Description
Technical field
The present invention relates to a kind of preparation method of Micro light-emitting diode displays part.
Background technology
Micro LED are miniaturization LED array structure, with self-luminous display characteristic, its technical advantage include it is all solid state,
Long-life, high brightness, low-power consumption, small volume, ultrahigh resolution, it can be applied to the extreme environments such as high temperature or radiation.Compared to
It is all the OLED technology that self-luminous is shown, not only efficiency is higher by Micro LED, last a long time, and material is not easily susceptible to ambient influnence
And stablize relatively, also it is avoided that generation ghost phenomena etc..
Current Micro LED display modes are typically monochromatic display, and the colorization that Micro LED are shown is that it is further opened up
The key technology of application is opened up, RGB three-color LED methods are that it realizes one of important technology direction of colorization.RGB three-color LED methods are complete
Colour display screen, which shows, is mainly based upon three primary colors (red, green, blue) toning general principle, specific implementation method：Respectively to red-LED, green
Color-LED, blueness-LED, impose different electric currents and can control its brightness value, so as to realize trichromatic combination, reach full-color
The effect that color is shown, this is the method that current LED giant-screens are generally used.This LED Large Screen and Fulls show combination side
Formula directly applies to micro-matrix LED display and also there are many problems, for example：Micro LED RGB three-color process needs RGB
Three chips, add technique process and technical difficulty so that yield rate is reduced, production cost increase.Use blue light
Red and green emitting medium the technology of MicroLED collocation.There are many problems in the method for wherein coating fluorescent material, such as：Fluorescence
Powder coating will absorb portion of energy, reduce conversion ratio.
It is the new Display Technique received much concern at present that quantum dot, which is shown,.Quantum dot (Quantum Dot, QD) is as a kind of
Emerging semiconductor nano material, has the advantages that high quantum efficiency, accurate adjustable, the half-peak width of spectrum, colour gamut are wide, application
Display gamut range is remarkably improved in display, and reduction shows power consumption etc. simultaneously.Application of the quantum dot in display technology field
It is main to include two aspects：Light emitting diode with quantum dots Display Technique (Quantum based on quanta point electroluminescent characteristic
Dots Light Emitting Diode Displays, QLED)；Quantum dot backlight based on quantum dot light Photoluminescence Properties
Technology (Quantum Dots-Backlight Unit, QD-BLU).And the subject matter that quanta point electroluminescent QLED is present is
Lack the blue light material of stability and high efficiency.
Using the respective advantage of Micro LED and QLED, based on the characteristic of quantum dot light photoluminescence, using blue light Micro
It is to realize that Micro LED show the important technology direction of colorization that LED is combined with green light quantum point, red light quantum point.Current one
As quantum dot is applied directly on UV/ blue-ray LEDs using rotary coating or vaporific spraying technology, make it be excited to send RGB tri-
Coloured light, then full color is realized by color proportioning.The subject matter that directly coating technology of quantum dots is present：(1) due to Micro
LED surfaces after processing are not smooth homogeneous, directly coat quantum dot in Micro LED, it is difficult to realize the precision of coat film
Or uniformity so that yield rate and display quality reduction；(2) due in spraying equipment jet size it is larger, the pixel of coating
Size is bigger than normal, it is difficult to realize that the coating of quantum dot high density or high-resolution are shown；(3) the quantum dot lack of homogeneity of coating, spraying
When more defect occurs, while assorted quantum dot colors influence each other so that colorization quality is remarkably decreased.
The content of the invention
The technical solution used in the present invention is：
A kind of preparation method of Micro light-emitting diode displays part, is included in the step that multiple Micro LED chips are prepared on substrate
Suddenly, it is further comprising the steps of：
(1) prepare transfer template, the transfer template have with it is part or all of in the Micro LED chips
The one-to-one raised or sunken pattern of Micro LED chips；
(2) quanta point material is coated in described raised or described recess patterns；
(3) the raised or sunken pattern is aligned with the Micro LED chips and contacted, the quanta point material is turned
Move to the upper surface of the Micro LED chips.
Preferably, the transfer process described in step (3) be by imprint the quanta point material is transferred to it is described
The upper surface of Micro LED chips.In moulding process, can be Micro LED chips under, transfer template, can also upper
It is to transfer template under, Micro LED chips are upper.
Preferably, the transfer template is soft template.Conventional soft mode plate material is the high polymer material of shaping, such as poly-
Dimethyl siloxane, polymethyl methacrylate etc..
In some specific embodiments, the transfer template has and whole Micro in Micro LED chips
The one-to-one recess patterns of LED chip, the transfer template is made up of high transmission rate material.The high transmission rate material can be with
It is ito glass, PET film and silicones.The transfer template with recess patterns and high transmission rate, quanta point material,
Micro LED chips and substrate constitute a kind of multicolor luminous Micro LED array modules, and wherein quanta point material is covered in
The upper surface of Micro LED chips.The transfer template with recess patterns and high transmission rate, quanta point material, protective agent,
Micro LED chips and substrate constitute another multicolor luminous Micro LED array module, wherein quanta point material and
Protective agent is covered in the upper surface of Micro LED chips, and the protective agent is the material LED package materials such as silicones, epoxy resin
Material, to protect Micro LED chips.
In other specific embodiments, in addition to step (4)：Remove the transfer template.
Preferably, it is that the transfer mold is prepared using photoetching technique, nanosphere etching or nanometer embossing in step (1)
Plate.
Preferably, quanta point material is quantum dot solution, quantum dot powder or quantum dot-composite powder.Wherein measure
Son point solution can be the solution that quantum dot is formed with solvent, the aqueous solution of such as quantum dot or the chloroformic solution of quantum dot；May be used also
To be oil-soluble or water miscible composite solution that the composite solution of quantum dot, i.e. quantum dot, polymer and solvent are mixed to form,
Oil-soluble composite solution such as quantum dot, polymethyl methacrylate and the composite solution of chloroform formation, wherein polymethylacrylic acid
Methyl esters may be replaced by polystyrene and its derivative, and it is organic molten that chloroform may be replaced by toluene, dimethylbenzene, methyl phenyl ethers anisole etc.
Agent；Water Soluble Compound solution such as quantum dot, polyvinyl alcohol and the compound miscible fluid of ethanol formation, wherein polyvinyl alcohol can also be replaced
Polyvinylpyrrolidone, polyacrylic acid and its derivative are changed to, ethanol may be replaced by the hydrophilies such as water, methanol, isopropanol
Solvent.Quantum dots-polymer powder refers to quantum dot and the composite powder of polymer formation, and wherein polymer can be poly-
Methyl methacrylate, polystyrene and its derivative, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid and its derivative.
Above-mentioned quantum dot can be CdTe, CdSe, CdS, ZnSe, InP, CuInS, CuInSe, PbS core and its core shell structure quantum
Point.
Preferably, coating described in step (2) be using inkjet printing, dip, be coated with, spin coating, overlay film or laser printing
Realize.
Preferably, the raised or sunken length and width of the transfer template is slightly larger than the length and width of Micro LED chips.It is raised
Length and width be slightly larger than the length and widths of Micro LED chips, it is effective to reduce the blue light leakage of Micro LED chips side.Depression
Length and width is slightly larger than the length and width of Micro LED chips, and cap-like structure can be formed during transfer, the leakage of blue light is reduced.It is described
The height of projection and Micro LED chip thickness non-correlations of template are transferred, can be less than, greater than or equal to Micro LED cores
Piece thickness, height of projection is higher, and more favourable, preferably greater than 2 times Micro LED chip thickness are transferred to operation.The transfer mold
The cup depth of plate can be smaller greater than, equal to or less than chip thickness, cup depth, more saves quantum dot ink, and depression is deep
Degree is bigger, and printing quantum dot ink is easier, and preferably cup depth is equal to chip thickness.
Preferably, the cross section of the raised design is inverted trapezoidal.
Preferably, the transfer template prepared in step (1) for with it is part or all of in the Micro LED chips
The transfer masterplate of the one-to-one recess patterns of Micro LED chips, step (1) is described recessed with being additionally included in before step (2)
The step of falling into one layer of hydrophily of upper coating or hydrophobic material.When the material of transfer template is hydrophobic selected from dimethyl silicone polymer etc.
Property material, when the quanta point material of transfer is hydrophobicity, one layer of hydrophilic material can be coated in transfer template, makes quantum dot
Material is easier transfer.Aminopropyltriethoxysilane (APTES), aminopropyl trimethoxysilane silicon can such as be utilized
Alkane coupling agent constructs SiO in hydrophobicity transfer template surface2Hydrophilic layer, due to the similar principle that mixes, oil-soluble quantum dot is recessed
Bulge-structure is formed in falling into, it is easier to be transferred to chip surface.The hydrophilic materials such as ito glass are selected from when transferring mould material,
, can be in transfer template surface spraying hydrophobic polymer such as poly-methyl methacrylate when the quanta point material of transfer is hydrophily
Ester, polystyrene etc., to increase the hydrophobicity of template, due to the similar principle that mixes, water-soluble quantum dot forms convex in the valley
Play structure, it is easier to be transferred to chip surface.
The beneficial effects of the invention are as follows：
It is currently based on Micro LED and quanta point material prepares the method for display device and is mainly side directly using ink-jet
Formula coats quanta point material on Micro LED chips surface, the out-of-flatnesses of Micro LED surfaces can influence coat precision and
Uniformity, is influenceed by equipment jet size, it is difficult to the high density of quantum dot and uniform coating are realized, while coating different colo(u)r specifications
Assorted quanta point material is easily caused during son point material to influence each other, and reduces display quality.The invention provides a kind of Micro
The preparation method of light-emitting diode display part, Micro LED chip upper tables are coated on by the way of template is transferred by quanta point material
Face, mainly has the advantage that：One layer of quanta point material is prepared in Micro LED surfaces using template transfer technique, for grain
The less quantum dot in footpath remains able to ensure the uniformity of quantum dot, can effectively improve light-emitting uniformity, Micro LED tables
Face planarization is on transfer uniformity without influence；Using template transfer technique, equipment cost can be effectively reduced, only need to be in difference
Large area sprays solid color quantum dot in template, is not influenceed by equipment jet size, easily realizes homogeneity, quantum dot spraying speed
Degree is fast, and transfer time is short, it is easy to accomplish the quick production of high-volume；Can be using a transfer template with recess patterns, will
Different quanta point material dislocation printings are transferred, simultaneously to the difference depression of matrix template while realizing different quanta point materials
Avoid and influence each other between different quantum dots；It can also use and coat different face in multiple transfer templates, each transfer template
The quanta point material of color, realize that the sequence of different quanta point materials is transferred using multiple dislocation transfer, it is to avoid different quantum dots
Between influence each other, colorization display quality can be effectively improved.
Brief description of the drawings
Fig. 1 is Micro LED chip array structure charts in embodiment 1；
Fig. 2 is the schematic flow sheet of preparation red quantum dot material layer in embodiment 1；
Fig. 3 is the schematic flow sheet of the green quantum dot material layer of preparation in embodiment 1；
Fig. 4 is to prepare the top views of Micro light-emitting diode display parts in embodiment 1；
Fig. 5 is to prepare the 3 d effect graphs of Micro light-emitting diode display parts in embodiment 1；
Fig. 6 is the schematic flow sheet of preparation red quantum dot material layer in embodiment 2；
Fig. 7 is the schematic flow sheet of the green quantum dot material layer of preparation in embodiment 2；
Fig. 8 is to prepare the schematic flow sheet of quantum dot material layer in embodiment 3；
Fig. 9 is to prepare the schematic flow sheet of quantum dot material layer in embodiment 4；
Figure 10 is the side view of multicolor luminous Micro LED array modules in embodiment 4；
Figure 11 is to prepare the schematic flow sheet of quantum dot material layer in embodiment 5；
Figure 12 is Micro LED chip structure figures in embodiment 6；
Figure 13 is to prepare the top views of Micro light-emitting diode display parts in embodiment 6；
Description of reference numerals：
1- substrates；2-Micro LED chips；3- transfers masterplate one；4- is raised；5- red quantum dot powder；6- transfer molds
Plate two；7- green quantum dot powder；8- transfers template three；The aqueous solution of 9- red quantum dots；10- transfers masterplate four；11- greens
The chloroformic solution of quantum dot；12- transfers template five；13- is recessed；The composite solution of 14- red quantum dots；15- green quantum dots
Composite solution；16- transfers template six；17- transfers template seven；18- protective agents.
Embodiment
The technique effect of the design of the present invention, concrete structure and generation is carried out below with reference to embodiment and accompanying drawing clear
Chu, it is fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this hair
Bright a part of embodiment, rather than whole embodiments, based on embodiments of the invention, those skilled in the art is not paying
The other embodiment obtained on the premise of creative work, belongs to the scope of protection of the invention.
Embodiment 1：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and Micro LED chip array structure charts are as shown in Figure 1；
(2) according to the schematic flow sheet of preparation red quantum dot material layer as shown in Figure 2, in the Micro LED cores
One layer of red quantum dot material 5 is prepared on the array of piece 2：Prepare transfer template 1：It is transfer mould material to choose PDMS, is utilized
Soft lithography prepares transfer template 1, and the transfer template 1 of preparation has is located at 2i-1 with Micro LED chip arrays
Row 2j-1 row (i, j=1,2, corresponding raised 4 pattern of 3 ... Micro LED chips 2 n), a length of 1.1 times of projection 4
Chip 2 length, the width of a width of 1.1 times of chip 2, the height of a height of 2.1 times of chip 2.Raised length and width is slightly larger than
The length and width of Micro LED chips, can effectively reduce the blue light leakage of Micro LED chips side, height of projection and Micro
LED chip thickness non-correlation, can be less than, greater than or equal to Micro LED chip thickness, and height of projection is higher, to operation
Transfer more favourable, preferably greater than 2 times Micro LED chip thickness.In the transfer template 1 there is raised 4 pattern one side to spray
Ink one layer of quanta point material 5 of coating, quanta point material is red quantum dot powder, by the Micro LED chips 2 downwards and institute
The alignment impressing of projection 4 is stated, lifts Micro LED chips 2, the red quantum dot material 5 in projection 4 is transferred to described
The upper surface of the array of Micro LED chips 2；
(3) according to the schematic flow sheet of the green quantum dot material layer of preparation as shown in Figure 3, in the Micro LED cores
One layer of green quanta point material 7 is prepared on the array of piece 2：Prepare transfer masterplate 26：It is transfer mould material to choose PMMA, is utilized
Nanometer embossing prepares transfer template 26, and the transfer template 26 of preparation has is located at the with the array of Micro LED chips 2
2i-1 rows 2j arrange and positioned at 2i rows 2j-1 row (i, j=1,2,3 ... corresponding convex of Micro LED chips 2 n)
Rise 4 patterns, projection 4 a length of 1.5 times of chip 2 length, the width of a width of 1.5 times of chip 2, a height of 2 times of chip 2
Highly；The one side ink-jet for having raised 4 pattern in the transfer template 26 coats one layer of quanta point material 7, and quanta point material is
Green quantum dot powder, impressing is directed at by raised 4 pattern with the Micro LED chips 2 downwards, lifts transfer template two
The green quanta point material on 6, raised 4 is transferred to the upper surface of the array of Micro LED chips 2.
Prepare at least two transfer molds of the raised design of the diverse location chip with correspondence Micro LED chip arrays
Plate, transfers the quanta point material of different colours, it is possible to achieve the sequence of different quanta point materials by the transfer template of different pattern
Row transfer, it is to avoid influenced each other between different quantum dots, can effectively improve colorization display quality.The present embodiment is to scheme
Embodiment is illustrated exemplified by Micro LED chip arrays structure in 1, can adaptively be changed according to actual needs
The arrangement architecture of chip, the arrangement of Micro LED chips can be diversified.
Embodiment 1 coated red, green quanta point material, structure in Micro LED chips by way of template is transferred
The top view for the Micro light-emitting diode display parts built is as shown in figure 4, its 3 d effect graph is as shown in Figure 5.By changing respective protrusions
Position and coating quantum dot color, it is possible to achieve a variety of quantum dots such as red, yellow, green, blue are coated in Micro LED chips
Material, so as to build the Micro light-emitting diode display parts of multiple combinations.
Embodiment 2：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) according to the schematic flow sheet of preparation red quantum dot material layer as shown in Figure 6, in the Micro LED cores
One layer of red quantum dot material 9 is prepared on the array of piece 2：Prepare transfer template 38：It is transfer mould material to choose PDMS, is utilized
Dip in a nanoimprinting technology and prepare transfer template 38, the transfer template 38 of preparation has to be located at the array of Micro LED chips 2
2i-1 rows 2j-1 is arranged and 2i rows 2j arranges (the corresponding projection 4 of the Micro LED chips 2 of i, j=1,2,3 ... n)
Pattern, the length of a length of 1.3 times of chip 2 of projection 4, the width of a width of 1.1 times of chip 2, a height of 0.9 times of chip 2
Thickness；There is the one side of raised design to dip in quanta point material 9 the transfer template, quanta point material is red quantum
The aqueous solution of point, transfer template 38 is lifted from solution, and raised 4 surface of template all covers quanta point material, projection 4
Side wall somewhat cover some quanta point materials, raised 4 pattern is directed at impressing with the Micro LED chips 2 downwards,
The red quantum dot material 9 lifted on transfer masterplate 38, raised design is transferred to the array of Micro LED chips 2
Upper surface；
(3) according to the schematic flow sheet of the green quantum dot material layer of preparation as shown in Figure 7, in the Micro LED cores
One layer of green quanta point material 11 is prepared on the array of piece 2：Prepare transfer masterplate 4 10：It is transfer mould material, profit to choose PMMA
Transfer template 4 10 is prepared with nanometer embossing, the transfer template 4 10 of preparation has to be located at the array of Micro LED chips 2
2i-1 rows 2j row (i, j=1,2, corresponding raised 4 pattern of 3 ... ... Micro LED chips 2 n), projection 4 it is a height of
The length of 1.4 times of chip 2, the width of a width of 1.2 times of chip 2, the thickness of a height of 1 times of chip 2；By the transfer template
One side with raised 4 pattern is dipped in quanta point material 11, and quanta point material is the chloroformic solution of green quantum dot, will be turned
Die plate 4 10 lifts from solution, and raised 4 surface of template all covers quanta point material, and the side wall of projection 4 is somewhat covered
Some quanta point materials, are directed at impressing with the Micro LED chips 2 upwards by raised 4 pattern, transfer mold are removed downwards
The green quanta point material 11 in version 4 10, projection 4 is transferred to the upper surface of the array of Micro LED chips 2.
Embodiment 3：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) according to the schematic flow sheet for preparing quantum dot material layer as shown in Figure 8, in 2 gusts of the Micro LED chips
One layer of quanta point material is prepared on row：Prepare transfer masterplate 5 12：It is transfer mould material to choose PDMS, utilizes nano impression skill
Art prepares transfer template 5 12, and the transfer template 5 12 of preparation has and the array of Micro LED chips 2 whole Micro LED cores
13 patterns of corresponding depression of piece 2, the length of a length of 1.1 times of chip 2 of depression 13, the width of a width of 1.1 times of chip 2 is deep
For the thickness of 1 times of chip 2.The length and width of depression is slightly larger than the length and width of Micro LED chips, and hat shape knot can be formed during transfer
Structure, reduces the leakage of blue light, and cup depth can be smaller greater than, equal to or less than chip thickness, cup depth, more saving
Son point ink, cup depth is bigger, and printing quantum dot ink is easier, and preferably cup depth is equal to chip thickness.Utilize colour
Laser printing technology is located at 2i-1 rows 2j-1 in the transfer template 5 12 and arranged (at the depression 13 of i, j=1,2,3 ... n)
Red quantum dot material 14 is printed, positioned at 2i-1 rows 2j row and 2i rows 2j-1 row (i, j=1,2,3 ... ... n) recessed
The green quanta point material 15 of printing at 13 patterns is fallen into, the red quantum dot material 14 is the composite solution of red quantum dot, tool
Body is the composite solution formed by red quantum dot, polymethyl methacrylate and methyl phenyl ethers anisole, the green quanta point material 15
It is specifically the composite solution formed by green quantum dot, polyvinyl alcohol and ethanol for the composite solution of green quantum dot, will be described
The one side that Micro LED chips 2 have 13 patterns of depression with the transfer template 5 12 downwards is directed at impressing, lifts Micro
The quanta point material in LED chip 2, depression 13 is transferred to the upper surface of the Micro LED chip arrays.
Embodiment 4：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) according to the schematic flow sheet for preparing quantum dot material layer as shown in Figure 9, in 2 gusts of the Micro LED chips
One layer of quanta point material is prepared on row：Prepare transfer template 6 16：It is transfer template material to choose high transmission rate material ito glass
Material, transfer template 6 16 is prepared using Nanosphere lithography technique, and the transfer template 6 16 of preparation has and Micro LED chips battle array
Arrange 13 patterns of corresponding depression of whole Micro LED chips 2, the length of a length of 1.5 times of chip 2 of depression 13, a width of 1.3 times
Chip 2 width, depth is the thickness of 0.9 times of chip 2, is located at the in the transfer template 6 16 using inkjet technology
2i-1 rows 2j-1 is arranged and 2i rows 2j row (print red quantum dot material at the pattern of depression 13 of i, j=1,2,3 ... n)
14, (green quanta point material 15, institute are printed at i, j=1,2,3 ... ... the pattern of depression 13 n) positioned at 2i-1 rows 2j row
State red quantum dot material 14 and the green quanta point material 15 is identical with the quanta point material of embodiment 3, by the Micro
LED chip 2 is directed at impressing with one side of the transfer template 6 16 with 13 patterns of depression and is combined, and constitutes multicolor luminous
Micro LED array modules, its side view is as shown in Figure 10.
Embodiment 5：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) according to the schematic flow sheet for preparing quantum dot material layer as shown in figure 11, in the Micro LED chips 2
One layer of quanta point material is prepared on array：Prepare transfer template 7 17：It is transfer template material to choose high transmission rate material silicones
Material, transfer template 7 17 is prepared using Nanosphere lithography technique, the transfer template 7 17 of preparation has and Micro LED chips
13 patterns of corresponding depression of array whole Micro LED chips 2, the length of a length of 1.5 times of chip 2 of depression 13, a width of 1.3
The width of chip 2 again, depth is the thickness of 1.2 times of chip 2, is located at using inkjet technology in the transfer template 7 17
2i-1 rows 2j-1 is arranged and 2i rows 2j row (print red quantum dot material at the pattern of depression 13 of i, j=1,2,3 ... n)
Material 14, positioned at 2i-1 rows 2j row (green quanta point material 15 is printed at i, j=1,2,3 ... ... the pattern of depression 13 n),
(protective agent 18 is printed at i, j=1,2,3 ... the pattern of depression 13 n), the protective agent is silicon positioned at 2i rows 2j-1 row
Resin.The protective agent can be the LED encapsulation materials such as epoxy resin.The red quantum dot material 14 and the green quantum
Point material 15 is identical with the quanta point material for implementing 3, the Micro LED chips 2 and the transfer template 7 17 is had recessed
The one side alignment impressing for falling into 13 patterns is compound, constitutes multicolor luminous Micro LED array modules.
Embodiment 6：
Micro light-emitting diode display parts are prepared using following steps：
(1) multiple Micro LED chips 2 are prepared on substrate 1, and the arrangements of chips structure is as shown in figure 12；
(2) one layer of quanta point material is prepared in the structure of Micro LED chips 2：Prepare transfer template eight：Choose
PDMS is transfer mould material, and transfer template eight is prepared using soft lithography, and the transfer template eight of preparation has and Micro
The corresponding recess patterns of the array of LED chip 2 whole Micro LED chips, the length of a length of 1.2 times of chip 2 of depression is a width of
The width of 1.1 times of chip 2, depth for 1 times of chip 2 thickness, using color laser printing technology in the transfer template the
2i-1 arranges 3j position and 2i arranges the 2j-1 position (the recess printing red quantum dot material of i, j=1,2,3 ... n)
Material 14, arranged in the transfer template 2i-1 3j-2 position of row and 2i the 2j position (i, j=1,2,3 ..., n)
The green quanta point material 15 of recess printing, red and green quanta point material is identical with the quanta point material of embodiment 3.It will turn
Die plate eight has the one of recess patterns to be directed at impressing with the Micro LED chips 2 downwards, lifts transfer template eight, recessed
The quanta point material fallen on pattern is transferred to the upper surface of the arrangement architecture of Micro LED chips 2, is built into
The top view of Micro light-emitting diode display parts is as shown in figure 13.
Embodiment 7：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) one layer of quanta point material is prepared on the array of Micro LED chips 2：Transfer template nine is prepared respectively, turned
Die plate ten and transfer template 11：Choose PDMS for transfer mould material, be utilized respectively soft lithography prepare have with
Micro LED chip array 2i-1 rows 2j-1 row (the corresponding depression figure of the Micro LED chips of i, j=1,2,3 ... n)
The transfer template nine of case, with the array 2i-1 rows 2j of Micro LED chips 2 row (i, j=1,2,3 ... n) (i, j=
The transfer template ten of 1,2,3 ... the corresponding recess patterns of Micro LED chips 2 n) and with Micro LED chips battle array
Arrange 2i rows 2j row (i, j=1,2, the transfer template 11 of 3 ... the corresponding recess patterns of Micro LED chips 2 n),
The length of a length of 1.5 times of chip 2 of the transfer template depression, the width of a width of 1.1 times of chip 2, depth is 1 times of chip
2 thickness, has one layer of the one side coating of recess patterns red in the transfer template nine respectively using color laser printing technology
The composite powder of color quantum dot-polymer powder, specifically red quantum dot and polymethyl methacrylate, at described turn
Die plate ten has the green quantum dot-polymer powder of one layer of one side coating of recess patterns, and specifically green quantum dot is with gathering
The composite powder of styrene, the transfer template 11 have the one side of recess patterns coat one layer of yellow quantum dot-
The composite powder of polymer powder, specifically yellow quantum dot and polyvinyl alcohol.Respectively by three transfer template tools
Have recess patterns one is directed at impressing with the Micro LED chips 2 downwards, and three transfer templates, depression figure are lifted respectively
The quanta point material in case is transferred to the upper surface of the array of Micro LED chips 2.
Embodiment 8：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) one layer of quanta point material is prepared in the structure of Micro LED chips 2：Prepare same as Example 3 turn
Die plate five, is coated one layer of aminopropyltriethoxysilane on the surface of transfer template five, is existed using inkjet technology
It is described transfer template five be located at 2i-1 rows 2j-1 arrange (i, j=1,2,3 ... n) recess printing red quantum dot,
Polymethyl methacrylate and the oil-soluble composite solution of chloroform formation, positioned at 2i-1 rows 2j row and 2i rows 2j-1 row
(i, j=1,2,3 ... the oil-soluble that green quantum dot, polystyrene and methyl phenyl ethers anisole formation are printed at recess patterns n) is combined
Solution.The one side that the Micro LED chips 2 have recess patterns with the transfer template five downwards is directed at impressing, lifted
The quanta point material in Micro LED chips 2, depression is transferred to the upper surface of the Micro LED chip arrays.Pass through
One layer of hydrophobicity of coating or hydrophilic material in transfer template, change the hydrophobicity or hydrophily of depression template, thus it is possible to vary
Pattern of the quantum dot ink in depression, so as to effectively reduce the leakage of Micro-LED chips blue light.
Embodiment 9：
Micro light-emitting diode display parts are prepared using following steps：
(1) array of Micro LED chips 2 is prepared on substrate 1, and the chip array is in the same manner as in Example 1；
(2) one layer of quanta point material is prepared in the structure of Micro LED chips 2：Prepare same as Example 4 turn
Die plate six, coats a strata methyl methacrylate, using inkjet technology described on the surface of transfer template six
Transferring template six, (recess of i, j=1,2,3 ... n) prints red quantum dot, polyethylene positioned at 2i-1 rows 2j-1 row
Alcohol and ethanol formation Water Soluble Compound solution, positioned at 2i-1 rows 2j row and 2i rows 2j-1 row (i, j=1,2,
The Water Soluble Compound miscible fluid of green quantum dot, polyacrylic acid and isopropanol formation is printed at 3 ... ... recess patterns n), will
The one side that the Micro LED chips 2 have recess patterns with the transfer template six is directed at impressing, lifts Micro LED cores
The quanta point material in piece 2, depression is transferred to the upper surface of the Micro LED chip arrays.
Claims (10)
1. a kind of preparation method of Micro light-emitting diode displays part, is included in the step that multiple Micro LED chips are prepared on substrate
Suddenly, it is characterised in that further comprising the steps of：
(1) transfer template is prepared, the transfer template has and the part or all of Micro in the Micro LED chips
The one-to-one raised or sunken pattern of LED chip；
(2) quanta point material is coated in described raised or described recess patterns；
(3) the raised or sunken pattern is aligned with the Micro LED chips and contacted, the quanta point material is transferred to
The upper surface of the Micro LED chips.
2. the preparation method of Micro light-emitting diode displays part according to claim 1, it is characterised in that described in step (3)
Transfer process be that the quanta point material is transferred to the upper surfaces of the Micro LED chips by imprinting.
3. the preparation method of Micro light-emitting diode displays part according to claim 1, it is characterised in that the transfer template
For soft template.
4. the preparation method of Micro light-emitting diode displays part according to claim 1, it is characterised in that the transfer template
With with whole one-to-one recess patterns of Micro LED chips in Micro LED chips, the transfer template by it is high thoroughly
Light rate material is made.
5. the preparation method of Micro light-emitting diode displays part according to claim 1, it is characterised in that also including step
(4)：Remove the transfer template.
6. the preparation method of the Micro light-emitting diode display parts according to claim any one of 1-5, it is characterised in that step
(1) it is that the transfer template is prepared using photoetching technique, nanosphere etching or nanometer embossing in.
7. the preparation method of the Micro light-emitting diode display parts according to claim any one of 1-5, it is characterised in that quantum
Point material is quantum dot solution, quantum dot powder or quantum dots-polymer powder.
8. the preparation method of the Micro light-emitting diode display parts according to claim any one of 1-5, it is characterised in that step
(2) coating described in be using inkjet printing, dip, be coated with, spin coating, overlay film or laser printing are realized.
9. the preparation method of the Micro light-emitting diode display parts according to claim any one of 1-5, it is characterised in that described
The raised or sunken length and width for transferring template is slightly larger than the length and width of Micro LED chips.
10. the preparation method of the Micro light-emitting diode display parts according to claim any one of 1-5, it is characterised in that described
The cross section of raised design is inverted trapezoidal.
Priority Applications (2)
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| CN201710389639.7A CN107170876A (en) | 2017-05-27 | 2017-05-27 | A kind of preparation method of Micro light-emitting diode displays part |
| PCT/CN2018/088179 WO2018219199A1 (en) | 2017-05-27 | 2018-05-24 | Display device and preparation method therefor |
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| CN201710389639.7A CN107170876A (en) | 2017-05-27 | 2017-05-27 | A kind of preparation method of Micro light-emitting diode displays part |
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