CN101825842A - Method for manufacturing nano-imprinting seal - Google Patents
Method for manufacturing nano-imprinting seal Download PDFInfo
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- CN101825842A CN101825842A CN 201010139179 CN201010139179A CN101825842A CN 101825842 A CN101825842 A CN 101825842A CN 201010139179 CN201010139179 CN 201010139179 CN 201010139179 A CN201010139179 A CN 201010139179A CN 101825842 A CN101825842 A CN 101825842A
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Abstract
The invention discloses a method for manufacturing a nano-imprinting seal, which comprises the following steps: obtaining a nano pattern through exposing an electron beam on electron beam glue, filling the nano pattern and then transferring to a metal surface by adopting a metal evaporating and electroplating method, and then transferring and sticking a metal coating with a micro-nano structure onto a metal substrate to obtain the reusable nano-imprinting seal. The metal nano-imprinting seal manufactured by the method has high rigidity and good extension performance, simultaneously has lower manufacturing cost and simple process realization and can be widely applied to the technical field of micro-nano pattern processing.
Description
Technical field
The present invention relates to nanoscale metallic pattern manufacture technology field, particularly relate to a kind of method of making nano-imprinting seal.
Background technology
Fast development along with semiconductor technology, the SIC (semiconductor integrated circuit) integrated level improves constantly, the IC interior device size has been reduced to nanoscale, when making the nanoscale devices masking graphics, conventional optical semiconductor lithography is owing to the restriction of diffraction limit has run into unprecedented challenge.After often using all kinds of waveguides, grating and photonic crystal array and also need to make the mask graph of nanoscale, the optoelectronics territory is transferred in addition at device surface.Development and improve a kind of efficient, accurate nano graph method for making become essential.
The micro-nano pattern-producing method of present main flow comprises conventional semiconductor exposure and two kinds of means of electron beam exposure, and the rotine exposure method is made the wavelength restriction that nano graph can be exposed the machine light source, and wavelength is short more, and graphics resolution is high more.But obtain that power is higher, the unusual difficulty of the short wavelength light source of stable performance, exposure sources costs an arm and a leg simultaneously, cost is very high.Electron beam lithography utilizes the extremely short electronics of wavelength as the resist exposure source, substantially can break away from the diffraction limit restriction, can access the figure of several nanoscales at present, but electron beam exposure writes the exposure technique of figure as a kind of controlling electron beam moving on photoresist, efficient is lower, is not suitable for making large-area graphs.
Nanometer embossing is more and more used as the additional of above-mentioned two kinds of micro-nano graph process technologies.Nanometer embossing uses the seal that has graphics of nanometer dimension to make on mask glue by the method for hot pressing or ultra-violet curing and obtains nano graph, then nano graph is transferred to device.This technology uses the impression mode to make nano graph, does not have the optical diffraction influence, has high resolution, the while device simple, and the technology cost is lower.Gordian technique is the making of nano-imprinting seal in the nanometer embossing, has only high-quality seal just can obtain good nano graph.Nano-imprinting seal material commonly used is silicon materials and carbofrax material.Silicon materials are the rapidoprint commonly used of field of semiconductor processing, and silicon materials seal processing and fabricating is simple, and cost is lower.But silicon materials seal physical strength is low, and material is more crisp, is subjected to impaired in processing and making process easily.Carbofrax material material seal physical strength height, but processing difficulties, material cost is higher.
In addition, conventional nano-imprinting seal manufacture craft is at first making the figure on the mask glue, by etching technics with the figure transfer on the mask to signet material, can bring fabrication error and aliasing unavoidably in the etching process.When the etching nano-scale pattern,, may make the distortion of etching pattern side wall because etch product is residual.
Summary of the invention
(1) technical matters that will solve
The present invention is directed to the shortcoming of above-mentioned impression seal in making and use, a kind of method of making nano-imprinting seal is proposed, make the metal nano figure that obtains by this method and have high resolving power and high fidelity, metal nano figure seal has excellent mechanical intensity, ductility and chemical stability simultaneously, is fit to repeated washing and use in the nanometer hot padding process.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of making nano-imprinting seal, this method obtains nano graph by electron beam exposure on electron beam adhesive, utilize evaporation of metal and electric plating method that this nano graph is transferred to the metal surface, the metal coating that will have micro-nano structure then shifts and sticks on the metal substrate, obtains reusable nano-imprinting seal.
In the such scheme, the nano-imprinting seal that this method makes is a seal metal, and the nano graph of this seal metal is directly filled electron beam exposure resist nano graph by metal and obtained, and the seal metal that has nano graph adopts stripping means to separate with substrate.
In the such scheme, described nano-imprinting seal is that electron beam evaporation or magnetron sputtering metallic film cover filling electron sensitive resist figure, with this metal level is that conductive layer is electroplated thicker metal level as nanometer seal graphics supporting layer, and this supporting layer and metal support welding or stickup are one.
In the such scheme, described electron beam exposure resist nano graph is to use electron beam exposure method to make, and the electron beam exposure resist-coating is on substrate electron bundle exposure conductive metal layer.
In the such scheme, described electron beam exposure resist bottom is the electron beam exposure conductive metal layer, and the electron beam exposure conductive metal layer adopts electron beam evaporation or magnetically controlled sputter method to be produced on the dimethyl silicone polymer PDMS layer that is positioned on the substrate.
In the such scheme, described dimethyl silicone polymer PDMS adopts spin coating method to be coated in substrate material surface as sacrifice layer, by removing dimethyl silicone polymer PDMS separating metal seal and substrate.
In the such scheme, the electron beam exposure conductive metal layer on the described nano-imprinting seal is peeled off removal by electron sensitive resist.
(3) beneficial effect
The method of this making nano-imprinting seal provided by the invention, the nano-scale pattern that nano graph is directly filled on the resist by metal obtains, and has high resolving power, Hi-Fi characteristics.The nano graph height equals resist thickness, and the control of the figure degree of depth is simple and convenient.Metal nano figure seal chemical property is stable, and physical strength is higher.Have certain ductility simultaneously, not fragile in the use, can be repeatedly used.
Description of drawings
Fig. 1 obtains the nano graph synoptic diagram for the present invention on electron sensitive resist;
Fig. 2 is a layers of material position view of the present invention;
Fig. 3 obtains metal nano seal structure synoptic diagram after at the bottom of the peeling liner of the present invention;
Wherein respectively marking structure is described as follows:
1: substrate 2:PDMS film
3: electron beam exposure conducting metal 4: the electron sensitive resist that has micro-nano structure
5: plated conductive metal level 6: electroplated metal layer
7: nanometer seal metal support 8: the micro-nano metallic pattern on the plated conductive metal level
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The method of making nano-imprinting seal provided by the invention, on electron beam adhesive, obtain nano graph by electron beam exposure, transfer to the metal surface after utilizing evaporation of metal and electric plating method that this nano graph is filled, the metal coating that will have micro-nano structure then shifts and sticks on the metal substrate, obtains reusable nano-imprinting seal.
Wherein, the nano-imprinting seal that this method makes is a seal metal, and the nano graph of this seal metal is directly filled electron beam exposure resist nano graph by metal and obtained, and the seal metal that has nano graph adopts stripping means to separate with substrate.Described nano-imprinting seal is electron beam evaporation or magnetron sputtering metallic film overlay electronic bundle resist figure, with this metal level is that conductive layer is electroplated thicker metal level as nanometer seal graphics supporting layer, and this supporting layer and metal support welding or stickup are one.
Described electron beam exposure resist nano graph is to use electron beam exposure method to make, and the electron beam exposure resist-coating is on substrate electron bundle exposure conductive metal layer.Described electron beam exposure resist bottom is the electron beam exposure conductive metal layer, and the electron beam exposure conductive metal layer adopts electron beam evaporation or magnetically controlled sputter method to be produced on the dimethyl silicone polymer PDMS layer that is positioned on the substrate.Described dimethyl silicone polymer PDMS adopts spin coating method to be coated in substrate material surface as sacrifice layer, by removing dimethyl silicone polymer PDMS separating metal seal and substrate.Electron beam exposure conductive metal layer on the described nano-imprinting seal is peeled off removal by electron sensitive resist.
The present invention realizes by following approach: a kind of method of making the nano impression seal metal, this method be spin coating dimethyl silicone polymer (PDMS) on backing material; On PDMS, make the electron beam exposure conductive metal layer; Spin coating electron sensitive resist on the conductive metal layer is made nano graph by electron beam exposure method on electron sensitive resist; Make the plated conductive metal level, the nano graph on filling and the overlay electronic bundle resist; With this layer metal is conductive layer, plating thick metal layer; The method of using welding or pasting is connected electrodeposited coating with metal support; With PDMS and substrate desquamation, and remove.The method of utilizing acetone to peel off is removed electron sensitive resist and electron beam conductive metal layer, obtains being positioned at the embossed metal seal that has nano graph on the metal support.
Wherein, the backing material that uses can be silicon chip or other semiconductor materials.Between the PDMS of spin coating on the substrate and backing material, have lower adhesiveness, separate with substrate layer easily, can be used as sacrifice layer and substrate separation layer in the seal metal manufacturing process.The electron beam exposure conductive metal layer of making on PDMS can be realized by metallic film method for makings such as electron beam evaporation or magnetron sputterings.The electron beam exposure metal conducting layer can improve the sheet electronic conductivity, helps improving next step electron beam exposure pattern precision.The electron beam exposure resist of spin coating on the electron beam exposure conductive metal layer can be polymethylmethacrylate (PMMA) or other electron sensitive resists.After utilizing electron beam exposure on the electron sensitive resist, carry out developing fixing, obtain the nano graph on the electron sensitive resist, the figure degree of depth and electron sensitive resist consistency of thickness.The electroplated conductive layer of making can make metallic film method for makings such as deposited by electron beam evaporation or magnetron sputtering realize, this metal level covers and fill the figure on the electron sensitive resist, can obtain the nano-scale pattern on seal metal surface.This layer metal can be used as the conductive layer of next step plated metal technology simultaneously.The plating thick metal layer that uses is the articulamentum between nano graph metal level and the metal support.The method of substrate desquamation and removal also can realize by the method for polishing, attenuate.
With reference to Fig. 1, use silicon chip to be substrate 1, substrate 1 is carried out triclene, phenixin, acetone, alcohol, washed with de-ionized water, behind the removal surface contamination, nitrogen dries up.Substrate 1 surperficial spin coating dimethyl siloxane (PDMS) is selected 5000 rev/mins of whirl coating rotating speeds, obtains about 10～20 microns PDMS films 2 of thickness.Using electron beam evaporation method to make thickness on PDMS film 2 surfaces is the electron beam exposure conducting metal 3 of 50 nanometers.At electron beam exposure conducting metal 3 surperficial spin coating PMMA electron sensitive resists, select 5000 rev/mins of whirl coating rotating speeds, obtain thickness 200 nanoelectronic bundle resist layers.Utilize electron beam exposure method to its exposure processing on the electron sensitive resist surface, obtain having the electron sensitive resist 4 of nano-scale pattern behind the exposure imaging.
Utilize magnetically controlled sputter method to make metal nickel film as plated conductive metal level 5, thickness 250nm on electron beam exposure resist 4 surfaces that have nano graph.Utilizing electro-plating method is 50 micron thickness nickel metal layers 6 at plated conductive metal level 5 electroplating surface thickness.Use metal adhesive that electroless nickel layer 6 and stainless steel metal supporter are bonded together.One-piece construction as shown in Figure 2.
PDMS thin layer 2 is peeled off on silicon chip substrate 1 and electron beam exposure conductive layer 3, realize that silicon substrate separates with the metal nano seal, after the separation metal nano seal is soaked in the acetone soln, use PMMA electron sensitive resist 4 to peel off electron beam exposure conducting metal 3, obtain complete nickel embossed metal seal at last with nano graph structure.One-piece construction as shown in Figure 3.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. method of making nano-imprinting seal, it is characterized in that, this method obtains nano graph by electron beam exposure on electron beam adhesive, transfer to the metal surface after utilizing evaporation of metal and electric plating method that this nano graph is filled, the metal coating that will have micro-nano structure then shifts and sticks on the metal substrate, obtains reusable nano-imprinting seal.
2. the method for making nano-imprinting seal according to claim 1, it is characterized in that, the nano-imprinting seal that this method makes is a seal metal, the nano graph of this seal metal is directly filled electron beam exposure resist nano graph by metal and is obtained, and the seal metal that has nano graph adopts stripping means to separate with substrate.
3. the method for making nano-imprinting seal according to claim 1, it is characterized in that, described nano-imprinting seal is electron beam evaporation or magnetron sputtering metallic film overlay electronic bundle resist figure, with this metal level is that conductive layer is electroplated thicker metal level as nanometer seal graphics supporting layer, and this supporting layer and metal support welding or stickup are one.
4. the method for making nano-imprinting seal according to claim 1, it is characterized in that, described electron beam exposure resist nano graph is to use electron beam exposure method to make, and the electron beam exposure resist-coating is on substrate electron bundle exposure conductive metal layer.
5. the method for making nano-imprinting seal according to claim 1, it is characterized in that, described electron beam exposure resist bottom is the electron beam exposure conductive metal layer, and the electron beam exposure conductive metal layer adopts electron beam evaporation or magnetically controlled sputter method to be produced on the dimethyl silicone polymer PDMS layer that is positioned on the substrate.
6. the method for making nano-imprinting seal according to claim 5, it is characterized in that, described dimethyl silicone polymer PDMS adopts spin coating method to be coated in substrate material surface as sacrifice layer, by removing dimethyl silicone polymer PDMS separating metal seal and substrate.
7. the method for making nano-imprinting seal according to claim 5 is characterized in that, the electron beam exposure conductive metal layer on the described nano-imprinting seal is peeled off removal by electron sensitive resist.
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| CN2010101391790A CN101825842B (en) | 2010-03-31 | 2010-03-31 | Method for manufacturing nano-imprinting seal |
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| CN2010101391790A CN101825842B (en) | 2010-03-31 | 2010-03-31 | Method for manufacturing nano-imprinting seal |
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| CN101825842B CN101825842B (en) | 2012-05-23 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289147A (en) * | 2011-07-08 | 2011-12-21 | 中国科学院物理研究所 | Method for preparing semiconductor and thermoplastic organic matter composite micro nanometer structure |
| CN102402118A (en) * | 2011-11-25 | 2012-04-04 | 中国科学院微电子研究所 | Method for producing X-ray diffraction optical element |
| CN107170876A (en) * | 2017-05-27 | 2017-09-15 | 南方科技大学 | Preparation method of Micro LED display device |
| CN111240150A (en) * | 2020-01-17 | 2020-06-05 | 大连理工大学 | Nano graph transfer printing method assisted by sacrificial layer |
| CN112960641A (en) * | 2020-10-12 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer member, method of manufacturing the same, and transfer head having the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008068612A (en) * | 2006-09-13 | 2008-03-27 | Samsung Electronics Co Ltd | Mold for nano imprint and its manufacturing method |
| JP2008074043A (en) * | 2006-09-25 | 2008-04-03 | Yamaha Corp | Mold for fine molding and its regeneration method |
| CN101221359A (en) * | 2008-02-04 | 2008-07-16 | 哈尔滨工业大学 | Metallic material reflection type micro-optical element processing method based on hot press printing technology |
-
2010
- 2010-03-31 CN CN2010101391790A patent/CN101825842B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008068612A (en) * | 2006-09-13 | 2008-03-27 | Samsung Electronics Co Ltd | Mold for nano imprint and its manufacturing method |
| JP2008074043A (en) * | 2006-09-25 | 2008-04-03 | Yamaha Corp | Mold for fine molding and its regeneration method |
| CN101221359A (en) * | 2008-02-04 | 2008-07-16 | 哈尔滨工业大学 | Metallic material reflection type micro-optical element processing method based on hot press printing technology |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289147A (en) * | 2011-07-08 | 2011-12-21 | 中国科学院物理研究所 | Method for preparing semiconductor and thermoplastic organic matter composite micro nanometer structure |
| CN102402118A (en) * | 2011-11-25 | 2012-04-04 | 中国科学院微电子研究所 | Method for producing X-ray diffraction optical element |
| CN107170876A (en) * | 2017-05-27 | 2017-09-15 | 南方科技大学 | Preparation method of Micro LED display device |
| CN111240150A (en) * | 2020-01-17 | 2020-06-05 | 大连理工大学 | Nano graph transfer printing method assisted by sacrificial layer |
| CN112960641A (en) * | 2020-10-12 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer member, method of manufacturing the same, and transfer head having the same |
| CN112960641B (en) * | 2020-10-12 | 2024-01-23 | 重庆康佳光电科技有限公司 | Transfer member, preparation method thereof and transfer head with transfer member |
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| CN101825842B (en) | 2012-05-23 |
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