CN110943075B - Layered and zoned remote quantum dot white light LED and preparation method thereof - Google Patents

Layered and zoned remote quantum dot white light LED and preparation method thereof Download PDF

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CN110943075B
CN110943075B CN201911204011.0A CN201911204011A CN110943075B CN 110943075 B CN110943075 B CN 110943075B CN 201911204011 A CN201911204011 A CN 201911204011A CN 110943075 B CN110943075 B CN 110943075B
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CN110943075A (en
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余兴建
罗小兵
周姝伶
胡润
范义文
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Huazhong University of Science and Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract

The invention belongs to the field of LEDs and discloses a layered and zoned remote quantum dot white LED and a preparation method thereof. The far-away quantum dot white light LED comprises a substrate, a chip, an encapsulation adhesive and a quantum dot film, wherein the quantum dot film is of a multilayer structure, substrates are arranged between layers, quantum dots are distributed on each layer in a patterning mode, the quantum dots distributed between the layers are staggered, overlapping is avoided, and light emitted by the chip is only absorbed by one type of quantum dot on the same emission path. The invention also discloses a preparation method of the quantum dot film. By the invention, the quantum dot materials with different absorption and radiation spectrums are coated on the staggered areas on the same or different substrates, so that the light loss caused by scattering and secondary absorption excitation among different quantum dot materials can be solved, the light loss caused by back scattering of the quantum dots is reduced, the heat generation of the quantum dots is separated from the heat generation of a chip, the heat generation of the quantum dots is reduced, and the negative influence of the heat generation of the chip on a quantum dot layer is reduced.

Description

Layered and zoned remote quantum dot white light LED and preparation method thereof
Technical Field
The invention belongs to the field of LEDs, and particularly relates to a layered and zoned remote quantum dot white LED and a preparation method thereof.
Background
Light Emitting Diodes (LEDs) are semiconductor Light Emitting devices based on electron-hole recombination transition Light emission. Compared with traditional incandescent lamps, fluorescent lamps, high-voltage sodium lamps and other light sources, the LED has the advantages of high electro-optic conversion efficiency, high reliability, long service life, compact structure and the like. Accordingly, LEDs have gradually replaced conventional light sources in a variety of lighting fields, such as indoor lighting, landscape lighting, automobile headlights and street lamps, and the like.
White LEDs are the most widely used light sources, but a single LED chip cannot directly radiate white light. Therefore, the white LED commercially available at present is mainly obtained by coating a yellow phosphor on a blue LED chip, and this type of white LED is called a phosphor-converted white LED. The blue light generated after the chip is electrified is partially absorbed by the fluorescent powder particles and converted into yellow light when passing through the fluorescent powder layer, and the transmitted blue light and the excited yellow light are mixed with each other to obtain white light. The LED converting the fluorescent powder into the white light has the advantages of simple packaging process, high lumen efficiency, adjustable color temperature and the like. However, the half-peak bandwidth of the excitation spectrum of the fluorescent powder is large (50-100 nm) and the fluorescent powder lacks of red light and green light spectrum components, so that the color rendering index of the LED converting the fluorescent powder into white light is very low, and the real color of an illuminated object cannot be well reflected.
In recent years, Quantum Dots (QDs) have been widely studied by researchers at home and abroad as a novel photoluminescent material. Compared with fluorescent powder, the quantum dot has extremely narrow half-peak bandwidth (about 10nm) of excitation spectrum, so that the color rendering index of the white light LED can be effectively improved, and the quantum dot has wide application prospect in the fields of high illumination quality requirements such as backlight display and the like. In order to distinguish from phosphor converted white LEDs, the academia and industry refer to white LEDs containing quantum dots as quantum dot white LEDs.
Because the half-peak bandwidth of the quantum dot spectrum is extremely narrow, the quantum dot with single light-emitting characteristic coated on the blue LED chip can not realize complete white light spectrum. At present, there are two main ways to realize quantum dot white light LEDs: one is to mix green or red quantum dots with traditional yellow fluorescent powder and then coat the mixture on an LED chip; the other method is to mix multicolor quantum dots (green, yellow and red) and coat the mixture on an LED chip. For the first packaging mode, the chip radiation light and the fluorescent powder exciting light form main components of a white light spectrum, and the quantum dot radiation light makes up the deficiency of the spectrum in red or green wave bands, so that the light efficiency and the color rendering index can be considered simultaneously. However, due to the size difference between the nano-sized quantum dots and the micro-sized phosphor, there are many problems in mixing and dispersion, such as selection and matching of the dispersion matrix, which increase the complexity of the packaging process and the reliability of the white LED module. Compared with the first packaging mode, the quantum dot white light LED obtained by the second packaging mode can realize higher color rendering, but due to the existence of quantum dots with various colors, the problems of absorption and scattering among quantum dot particles with different colors, secondary absorption excitation of quantum dots with high conversion wavelengths to quantum dots with low conversion wavelengths and the like bring great challenges to the quantum dot coating process. Therefore, there is a need to develop a quantum dot coating process with low cost that can effectively solve the problems of absorption, scattering, secondary excitation and the like among quantum dots with different colors, so as to further improve the photo-thermal performance of the quantum dot-to-white LED.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a layered and zoned remote quantum dot white light LED and a preparation method thereof, wherein a patterned hydrophobic/oil surface is prepared, quantum dots are coated on the regions which are not subjected to hydrophobic/oil treatment, different quantum dots are coated at staggered positions by multilayer coating and superposition, so that the radiation light of a chip can be only absorbed and converted by one quantum dot when passing through a quantum dot layer, and the scattering, absorption and secondary excitation among the quantum dots with different colors are reduced, thereby improving the luminous efficiency of the quantum dot white light LED.
To achieve the above objects, according to one aspect of the present invention, there is provided a split quantum dot white LED comprising a substrate, a chip, an encapsulant and a quantum dot film, wherein,
the chip is arranged in the substrate, the quantum dot film is arranged above the chip, and the packaging adhesive is arranged between the chip and the quantum dot film, so that the chip is far away from the quantum dot film to form a far-away quantum dot white LED;
the quantum dot film is of a multilayer structure, the substrates are arranged between layers, quantum dots are distributed on each layer in a patterning mode, the quantum dots distributed between the layers are staggered, overlapping is avoided, and light emitted by the chip is only absorbed by one type of quantum dot on the same emission path.
Further preferably, the quantum dots are preferably one or more of blue quantum dots, green quantum dots, yellow quantum dots and red quantum dots, and the substrate is a transparent substrate.
Further preferably, the number of layers of the quantum dot layer is preferably greater than 2.
Further preferably, the material of the substrate is preferably a transparent substrate of silicon dioxide, sapphire or diamond having a thickness of 50 to 1000 μm.
Further preferably, the chip is preferably a blue light chip or a near ultraviolet chip, and the packaging adhesive is one or two of silica gel and resin.
According to another aspect of the present invention, there is provided a method for preparing a quantum dot film in the remote quantum dot white LED, the method comprising the following steps:
(a) selecting a substrate, and performing hydrophobic/oily treatment on the surface of the substrate according to a required pattern to form a hydrophobic/oily area and an untreated area on the substrate;
(b) selecting quantum dots, an adhesive and a volatile organic solvent to mix to form a quantum dot solution, and coating the quantum dot solution on the untreated area;
(c) heating the substrate to volatilize the volatilizable organic solvent in the quantum dot solution, and simultaneously bonding the quantum dots together by the adhesive, thereby realizing the preparation of the quantum dot film monolayer;
(d) and (c) repeating the steps (a) to (c) according to the number of the layers of the quantum dot film until all the layers of the quantum dot film are prepared, so as to obtain the required quantum dot film.
Further preferably, in the step (a), the substrate surface is subjected to hydrophobic/oily treatment according to a desired pattern on the substrate, preferably according to the following steps:
attaching a physical mask plate on the substrate, selecting a dispersing agent and hydrophobic/oil nano particles to mix to form a mixed solution, spraying the mixed solution on the hollow area of the mask plate, and heating the substrate to volatilize the dispersing agent, so that the patterned hydrophobic/oil treatment of the substrate is realized.
Further preferably, in step (b), the dispersant is one or more of acetone, alcohol and dichloromethane, and the hydrophobic/oil nanoparticles are silica, titania or alumina nanoparticles.
Further preferably, in the step (b), the area of the pattern arrayed on the mask is 2 × 10-9~3×10-6m2Circular, rectangular, square or prismatic.
Further preferably, the quantum dot solution comprises 0.1-10% by mass of quantum dot particles, 1-10% by mass of a binder and 80-98.9% by mass of a volatile organic solvent, wherein the binder is one or more of organic glass, silica gel, epoxy resin or rubber; the volatile organic solvent is one or more of acetone, hexane, toluene and dichloromethane.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
1. according to the invention, the quantum dot film is divided into a plurality of layers of structures, and the quantum dots in each layer of structure are distributed in a staggered manner, so that the radiation light of the chip can be absorbed and converted by only one type of quantum dot when passing through the quantum dot layer, and the phenomena of scattering, absorption and secondary excitation among different types of quantum dots can be effectively reduced, thereby improving the luminous efficiency of the quantum dot white light LED;
2. according to the invention, the quantum dot solution is coated on the prepared microarray patterned hydrophilic-hydrophobic/oil-based plate, and the quantum dot solution can preferentially wet the hydrophilic/oil area, so that the directional area-fixed coating of the quantum dots can be realized, the shape of the quantum dot coating area can be effectively regulated and controlled by changing the shape of the mask hollow-out area, the wetting shapes such as rectangle, prism, triangle, ellipse and the like which cannot be realized by conventional coating can be realized, and the shape and position of the quantum dot coating area can be freely regulated and controlled;
3. the invention adopts a mode of being far away from coating, can reduce the light loss caused by backscattering of the quantum dots, separate the heat generation of the quantum dots from the heat generation of the chip, reduce the heat generation of the quantum dots and reduce the negative influence of the heat generation of the chip on the quantum dot layer;
4. compared with the prior art of coating the mixed quantum dots and the low-thermal-conductivity polymer curing adhesive, the quantum dots are coated on the transparent substrate with higher thermal conductivity, such as quartz glass, sapphire, diamond and the like, and the heat generated in the quantum dot light conversion process can be more quickly transferred to the LED heat sink and the environment through the substrate, so that the service life and the thermal reliability of the quantum dot white LED can be effectively improved.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing a layered zoned remote quantum dot white LED constructed according to a preferred embodiment of the present invention;
FIG. 2 is a diagram of a conventional quantum dot coating technique in which (a) a plurality of quantum dots are coated in layers and (b) a plurality of quantum dots are coated in a mixed manner;
FIG. 3 is a schematic diagram of the multiple quantum dot coating method, wherein (a) is a schematic diagram of light absorption, scattering and excitation by multiple quantum dots after the existing mixed layered coating, and (b) is a schematic diagram of light absorption by only one quantum dot after the layered coating in the present invention;
FIG. 4 is a schematic representation of the wetting behavior of a fluid in which quantum dots are coated on a substrate, wherein (a) is a cross-sectional view of the wetting behavior, (b) is a top view of the wetting behavior, and (c) is a top view of the wetted topography after the surface has been defected during wetting;
fig. 5 is a schematic view showing the wetting behavior of a quantum dot solution on a substrate after patterning the substrate in the present invention, in which (a) is a cross-sectional view showing the wetting behavior of a quantum dot solution on a substrate after patterning the substrate in the present invention, and (b) is a schematic view showing the form of a quantum dot solution when the patterned shape is a square; a schematic diagram of the triangular microarray double-layer regional coating, (c) is a schematic diagram of the form of the quantum dot solution when the patterned shape is triangular; a schematic diagram of the triangular microarray double-layer regional coating, (d) is a schematic diagram of the quantum dot solution form when the patterned shape is a polygon; schematic diagram of triangular microarray double-layer regional coating;
FIG. 6 is a schematic diagram of a bilayer quantum dot film constructed in accordance with a preferred embodiment of the present invention;
fig. 7 is a schematic diagram of an LED structure of a multilayer quantum dot film constructed according to a preferred embodiment of the present invention, in which (a) is a schematic diagram of an LED structure of a three-layer quantum dot film, and (b) is a schematic diagram of an LED structure of a four-layer quantum dot film.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1001-mask plate, 1002-substrate, 1003-hydrophobic/oil nano-particles, 1004-quantum dot solution, 1005-quantum dot A, 1006-heating equipment, 1007-quantum dot B, 1008-packaging adhesive, 1009-LED substrate, 1010-chip, 1011-chip radiation light, 1012-quantum dot radiation light C and 1013-quantum dot radiation light D.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Fig. 2 shows a conventional quantum dot coating process, in which quantum dots are directly and uniformly mixed with organic glass, silica gel, epoxy resin or rubber, and then encapsulated in an LED module by a mixed coating method of multiple quantum dots shown in (a) of fig. 2 or a layered coating method of multiple quantum dots shown in (b) of fig. 2. As shown in fig. 3 (a), chip radiation light 1011 in the figure is absorbed by quantum dot B, absorbed, scattered and excited by quantum dot B to obtain radiation light C1012 of quantum dot, and then absorbed, scattered and excited again by quantum dot a1005 to obtain radiation light D1013 of quantum dot, and most of LED chip radiation light inevitably generates serious absorption, scattering and secondary excitation among different quantum dots, thereby causing serious light energy loss, and the lost light energy is converted into heat and causes temperature rise of quantum dot layer and LED module, thereby causing the electric-optical conversion efficiency of chip and the optical-optical conversion efficiency of quantum dot to be reduced and generating more heat.
In order to solve the above problems, the present invention provides a method for coating quantum dots in layered and partitioned areas, which is based on the principle shown in fig. 3 (b), wherein different types of quantum dots are coated in non-overlapping areas, so that most of the light radiated by an LED chip is absorbed and converted by only one type of quantum dot on a propagation path, and the absorption, scattering and secondary excitation phenomena among different types of quantum dots are greatly eliminated, thereby effectively improving the light efficiency, thermal reliability and other properties of a quantum dot white LED.
The optimal coating method is to coat different kinds of quantum dots on different areas of the same plane, but because the flow of fluid on the plane with the same wetting characteristic is random, natural and uncontrolled, the coating of different kinds of quantum dots in different areas on one plane cannot be carried out, and the shape and the position of the areas can be adjusted freely.
As shown in fig. 4 (a), the quantum dot coating is actually the fluid wetting spreading behavior of the quantum dot solution on the substrate, and therefore, its equilibrium contact angle θ can be described by Young's equation:
γsv=γsllv cosθ
wherein, γsvRepresenting the interfacial tension, gamma, between the solid wall and the surrounding fluid mediumslRepresents the interfacial tension, gamma, between the solid wall and the quantum dot solutionlvRepresenting the interfacial tension between the quantum dot solution and the surrounding fluid medium. When theta is>At 90 °, called hydrophobic/oily surface; when theta is<At 90 deg., it is called a hydrophilic/oily surface.
When the quantum dot solution is coated on a substrate with single wetting property, the wetting area of the substrate is only shown as (b) in fig. 4, the size of the circle with the coating point as the center can be changed only by changing the volume of the quantum dot solution, and when the surface has defects, the wetting appearance of the substrate even has an unexpected appearance in fig. 4 (c); in view of the above problems, the layered and zoned coating proposed by the present invention can solve two problems: 1) regulating and controlling the shape, position and size of a wetting area of a single quantum dot solution in a single plane; 2) and the multiple quantum dots are coated in a staggered way in different areas.
In order to realize the control of the shape, position and size of a quantum dot solution wetting area, the invention provides a preparation method of a microarray patterning hydrophilic-hydrophobic/oil transparent substrate, and the method is applied to quantum dot coating, the principle is shown in (a) in fig. 5, hydrophobic/oil nano particles are deposited on part of the surface of the substrate through a spraying technology and a mask isolation technology, the nano particles are self-assembled on the surface to form structures with micro-nano sizes, the structures prevent fluid from directly wetting the surface, so that the surface shows the superhydrophobic/oil characteristic with a contact angle larger than 160 degrees, in addition, the area covered by the mask retains the inherent hydrophilic/oil characteristic of the substrate, when the quantum dot solution is coated on the substrate, the solution can preferentially wet the hydrophilic/oil area, and only the contact angle is larger than that of the superhydrophobic/oil area, the droplets can further wet the super-hydrophobic/oil region, so long as the coating volume of the quantum dot solution is regulated, the quantum dots can be effectively limited in the hydrophilic/oil region, and the shape, position and size of the quantum dot solution wetting region shown in (b) to (d) of fig. 5 can be effectively controlled by designing the shape of the mask.
Further, in order to realize the regional staggered coating of various quantum dots, the invention provides a layered coating scheme, complementary hydrophilic/oil regions are prepared on different planes of the same substrate or different substrates by designing masks with complementary hollowed regions, different quantum dots are coated on different planes to realize the staggered coating of the quantum dots in different regions, as shown in fig. 6, two kinds of quantum dots are coated on the interlaced areas of two different planes of the same substrate, the different quantum dots are respectively on different paths of upward propagation of the chip radiation light, thus reducing absorption, scattering and secondary excitation among different quantum dots, improving the luminous efficiency and thermal reliability of the quantum dot LED, for LED products requiring multiple kinds of quantum dots to be excited to form white light, as shown in fig. 7, quantum dots may be coated on different planes of different substrates to achieve regional coating.
Specifically, the invention provides a far-away quantum dot white light LED with layered and zoned structure, which comprises a substrate, a chip, an encapsulating adhesive and a quantum dot film, wherein,
the chip is arranged in the substrate, the quantum dot film is arranged above the chip, and the packaging adhesive is arranged between the chip and the quantum dot film, so that the chip is far away from the quantum dot film to form a far-away quantum dot white LED;
the quantum dot film is of a multilayer structure, the substrates are arranged between layers, quantum dots are distributed on each layer in a patterning mode, the quantum dots distributed between the layers are staggered, overlapping is avoided, and light emitted by the chip is only absorbed by one type of quantum dot on the same emission path. The smaller the quantum dot coating area is, the more serious the scattering, absorption and secondary excitation of the radiation light of the adjacent quantum dots on the area boundary are, the larger the coating area is, the worse the light color uniformity of the finally realized LED product is, and in order to give consideration to the light efficiency and the light color uniformity of the LED, the size of the quantum dot coating area can be controlled within a reasonable range by changing the size of the mask.
Further, the quantum dots are preferably one or more of blue quantum dots, green quantum dots, yellow quantum dots and red quantum dots, and the substrate is a transparent substrate.
Further, since the half-peak bandwidth of the quantum dots is narrow, it is necessary to use 2 or more kinds of quantum dots to realize an ideal white light tube in practical applications, and therefore the number of quantum dot layers is preferably greater than 2.
Further, the material of the substrate is preferably a transparent substrate of silicon dioxide, sapphire or diamond having a thickness of 50 to 1000 μm.
Further, the chip is preferably a blue light chip or a near ultraviolet chip, and the packaging adhesive is one or two of silica gel and resin.
As shown in fig. 1, the present invention further provides a method for preparing a quantum dot film in the remote quantum dot white LED, which comprises the following steps:
s1: in step S1, the method for manufacturing the microarray patterned hydrophilic/hydrophobic/oil-based panel by combining the spray coating technique and the mask isolation technique includes the following steps:
s11: design and process the belt with an area of 2 x 10-9~3×10-6m2The physical mask plate 1001 with the circular, rectangular, square or prismatic micro-array hollowed-out patterns has the advantages that the pattern area is not too large, the light-emitting color of the LED module is not uniform in spatial distribution due to the fact that the pattern area is too large, meanwhile, the area is not too small, and the preparation difficulty of the patterned surface is greatly increased due to the fact that the pattern area is too small;
s12: attaching a physical mask plate to the outer surface of a transparent silicon dioxide, sapphire or diamond substrate 1002 with the thickness of 50-1000 microns, so that the mechanical strength is ensured on one hand, and the light transmittance is ensured on the other hand;
s13: depositing the hydrophobic/oil nanoparticle solution 1003 at a deposition density of 0.01-10 g/m2Spraying the coating on the substrate position corresponding to the hollow area of the mask plate; too high transmittance decreases and too low does not achieve the hydrophobic/oily effect;
hydrophobic/oil nanoparticles can be used: nanoparticles of silicon dioxide, titanium dioxide and aluminium oxide
The hydrophobic/oil nanoparticle solution comprises nanoparticles and a dispersant, wherein the dispersant can be one or more of acetone, alcohol and dichloromethane.
S14: heating the substrate 1002 to 30-50 ℃ to volatilize the particle dispersing agent, so that the nano particles are deposited on the substrate;
s15: the mask 1001 is removed, the areas shielded by the mask show hydrophilic/oily characteristics, and the hollow areas of the mask show hydrophobic/oily characteristics.
S2: selecting quantum dots, an adhesive and a volatilizable organic solvent to mix to form a quantum dot solution, coating the quantum dot solution 1004 containing the quantum dots, the adhesive and the volatilizable organic solvent matrix on a substrate 1002 in a spraying or spin coating mode, and wetting the microarray hydrophilic/oil pattern by the mixed solution under the influence of the fluid characteristic difference of the substrate; the adhesive is used for curing the quantum dots; the area on the substrate which is not subjected to the hydrophobic/oil treatment is a hydrophilic/oil area;
s3: placing a heating device 1006 below the substrate 1002, heating the substrate 1002 to 30-100 ℃ to volatilize the fluid matrix in the quantum dot 1004 solution and cure the adhesive, so as to cure and form the quantum dot A1005 on the substrate;
s4: forming the quantum dots B1007 on the other surface of the substrate by repeating the steps of S1-S3 or realizing the layered and regional coating of more than 2 quantum dots on the other substrate;
s5: the prepared substrate with the quantum dot pattern layer is packaged together with the LED module through a packaging process to form the LED module capable of radiating white light, and in the step S5, the quantum dot white light LED package comprises the following steps:
s51: capping the substrate with the quantum dot coating over an LED module;
s52: the gap between the substrate 1009 and the LED chip 1010 is filled with the package paste 1008 and cured.
The preparation method comprises the steps of firstly, combining a spraying technology and a mask isolation technology to spray hydrophobic/oil nano particles on a transparent high-thermal-conductivity substrate to realize the preparation of a microarray patterned hydrophilic/hydrophobic/oil-based plate, then coating a quantum dot solution containing quantum dots, an adhesive and a volatilizable organic solvent matrix on the substrate in a spin coating or spraying mode, heating the substrate to volatilize the fluid matrix and solidify the adhesive to obtain a stable quantum dot layer, realizing the layered and regional coating of various quantum dots on the other surface of the substrate or the surfaces of other substrates, and finally packaging the prepared substrate and an LED module together through a sealing and rotating process to form the LED module capable of radiating white light. The LED prepared by the invention can be a single LED chip module or a multi-LED chip array module; the LED chip comprises a blue light chip or a near ultraviolet chip; the packaging adhesive comprises one or more of silica gel and resin; the edge of the substrate directly contacts the LED substrate 1009, and the contact area is not less than 10% of the total area of the substrate, so as to ensure that the heat generated by the quantum dots can be rapidly transferred to the LED heat sink through the substrate, and reduce the temperature of the quantum dots.
In each of the above steps, the volatile organic solvent matrix comprises one or more of acetone, hexane, toluene, dichloromethane; the quantum dot solution comprises 0.1-10% of quantum dot particles by mass, 1-10% of adhesive by mass and 80-98.9% of volatile organic solvent by mass.
The present invention will be further illustrated with reference to specific examples.
Example 1
S1: preparing a microarray patterned hydrophilic-hydrophobic/oil transparent substrate by combining a spraying technology and a mask isolation technology, wherein in the step S1, the preparation method of the microarray patterned hydrophilic-hydrophobic/oil-based substrate comprises the following steps:
s11: design and process the belt with an area of 2 x 10-9m2The physical mask plate with the circular column hollow patterns;
s12: attaching a physical mask plate to the outer surface of a transparent silicon dioxide substrate with the thickness of 500 mu m;
s13: hydrophobic/oil nanoparticles were deposited at a density of 0.01g/m2Spraying the coating on the substrate position corresponding to the hollow area of the mask plate;
s14: heating the substrate to 30 ℃ to volatilize the particle dispersant;
s15: taking down the mask plate, wherein the region shielded by the mask plate shows hydrophilic/oily characteristics, and the hollow region of the mask plate shows hydrophobic/oily characteristics;
s2: coating a quantum dot solution containing blue quantum dots, a binder and a matrix of a volatilizable organic solvent on a substrate in a spray coating or spin coating mode, wherein the mixed solution only wets the hydrophilic/oily pattern of the microarray under the influence of the fluid characteristic difference of the substrate; the quantum dot solution comprises 0.1 mass percent of quantum dot particles, 1 mass percent of adhesive and 98.9 mass percent of volatile organic solvent;
s3: heating the substrate to 30 ℃ to volatilize the fluid matrix in the quantum dot solution and cure the binder;
s4: repeating the steps of S1-S3 to coat the green quantum dots on the other surface of the substrate in different regions;
s5: the prepared substrate with the quantum dot pattern layer is packaged with the LED module through a packaging process to form the LED module capable of radiating white light.
Example 2
Fig. 7 (a) shows the application of the method of the present invention in the three quantum dots sub-region coating, which includes the following steps:
s1: preparing a microarray patterned hydrophilic-hydrophobic/oil transparent substrate by combining a spraying technology and a mask isolation technology, wherein in the step S1, the preparation method of the microarray patterned hydrophilic-hydrophobic/oil-based substrate comprises the following steps:
s11: design and process the belt with an area of 3X 10-6m2The physical mask plate with the rectangular micro-array hollow patterns;
s12: attaching a physical mask plate to the outer surface of a transparent sapphire substrate with the thickness of 500 mu m;
s13: hydrophobic/oil nanoparticles were deposited at a density of 5g/m2Spraying the coating on the substrate position corresponding to the hollow area of the mask plate;
s14: heating the substrate to 50 ℃ to volatilize the particle dispersant;
s15: taking down the mask plate, wherein the region shielded by the mask plate shows hydrophilic/oily characteristics, and the hollow region of the mask plate shows hydrophobic/oily characteristics;
s2: coating a quantum dot solution containing red quantum dots, a binder and a matrix of a volatile organic solvent on a substrate in a spray coating or spin coating manner, wherein the mixed solution wets only the microarray hydrophilic/oil pattern under the influence of the fluid characteristic difference of the substrate; the quantum dot solution comprises 5 mass percent of quantum dot particles, 10 mass percent of adhesive and 85 mass percent of volatile organic solvent;
s3: heating the substrate to 70 ℃ to volatilize the fluid matrix in the red quantum dot solution and cure the binder;
s4: repeating S1-S3 to realize the layered regional coating of the yellow and green quantum dots on the other surface of the substrate or one surface of the other substrate;
s5: the prepared substrate with the quantum dot pattern layer is packaged with the LED module through a packaging process to form the LED module capable of radiating white light.
Example 3
Fig. 7 (b) shows the application of 4 layers of 4 quantum dots in the sub-region coating, which includes the following steps:
s1: preparing a microarray patterned hydrophilic-hydrophobic/oil transparent substrate by combining a spraying technology and a mask isolation technology, wherein in the step S1, the preparation method of the microarray patterned hydrophilic-hydrophobic/oil-based substrate comprises the following steps:
s11: designing and processing belts with dimensions of 2 x 10-8m2The physical mask plate with the prismatic micro-array hollow pattern;
s12: attaching a physical mask to the outer surface of a transparent diamond substrate with the thickness of 80 mu m;
s13: hydrophobic/oil nanoparticles were deposited at a density of 8g/m2Spraying the coating on the substrate position corresponding to the hollow area of the mask plate;
s14: heating the substrate to 40 ℃ to volatilize the particle dispersant;
s15: taking down the mask plate, wherein the region shielded by the mask plate shows hydrophilic/oily characteristics, and the hollow region of the mask plate shows hydrophobic/oily characteristics;
s2: coating a quantum dot solution containing green quantum dots, a binder and a matrix of a volatilizable organic solvent on a substrate in a spray coating or spin coating mode, wherein the mixed solution only wets the microarray hydrophilic/oil pattern under the influence of the fluid characteristic difference of the substrate; the quantum dot solution comprises 10 mass percent of quantum dot particles, 5 mass percent of adhesive and 85 mass percent of volatile organic solvent;
s3: heating the substrate to 90 ℃ to volatilize the fluid matrix in the quantum dot solution and cure the binder;
s4: repeating S1-S3 to coat the yellow, blue and red quantum dots on the other surface of the substrate and the other surface of the substrate in different regions;
s5: the prepared substrate with the quantum dot pattern layer is packaged with the LED module through a packaging process to form the LED module capable of radiating white light.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (10)

1. A far-away quantum dot white light LED with layered and zoned structure is characterized in that the far-away quantum dot white light LED comprises a substrate, a chip, an encapsulation adhesive and a quantum dot film, wherein,
the chip is arranged in the substrate, the quantum dot film is arranged above the chip, and the packaging adhesive is arranged between the chip and the quantum dot film, so that the chip is far away from the quantum dot film to form a far-away quantum dot white LED;
the quantum dot film is of a multilayer structure, the substrates are arranged between layers, quantum dots are distributed on each layer in a patterning mode, the quantum dots distributed between the layers are staggered, overlapping is avoided, and light emitted by the chip is only absorbed by one type of quantum dot on the same emission path.
2. The split-level quantum dot white LED of claim 1, wherein the quantum dots are one or more of blue quantum dots, green quantum dots, yellow quantum dots, and red quantum dots, and the substrate is a transparent substrate.
3. The layered, zoned, remote quantum dot white LED of claim 1, wherein the number of quantum dot layers is greater than 2.
4. The split-region remote quantum dot white LED of claim 1, wherein the substrate is a transparent substrate of silica, sapphire or diamond with a thickness of 50-1000 μm.
5. The layered split-area remote quantum dot white LED of claim 1, wherein the chip is a blue chip or a near-uv chip, and the encapsulant is one or both of silica gel and resin.
6. The method for preparing quantum dot film in the remote quantum dot white LED according to any one of claims 1 to 5, wherein the method comprises the following steps:
(a) selecting a substrate, and performing hydrophobic/oily treatment on the surface of the substrate according to a required pattern to form a hydrophobic/oily area and an untreated area on the substrate;
(b) selecting quantum dots, an adhesive and a volatile organic solvent, uniformly mixing to form a quantum dot solution, and coating the quantum dot solution on the untreated area;
(c) heating the substrate to volatilize the volatilizable organic solvent in the quantum dot solution, and simultaneously bonding the quantum dots together by the adhesive, thereby realizing the preparation of the quantum dot film monolayer;
(d) and (c) repeating the steps (a) to (c) according to the number of the layers of the quantum dot film until all the layers of the quantum dot film are prepared, so as to obtain the required quantum dot film.
7. The method of preparing a quantum dot film according to claim 6, wherein in the step (a), the surface of the substrate is subjected to a hydrophobic/oily treatment on the substrate according to a desired pattern, according to the following steps:
attaching a physical mask plate on the substrate, selecting a dispersing agent and hydrophobic/oil nano particles to mix to form a mixed solution, spraying the mixed solution on the hollow area of the mask plate, and heating the substrate to volatilize the dispersing agent, so that the patterned hydrophobic/oil treatment of the substrate is realized.
8. The method of preparing a quantum dot film according to claim 7, wherein in the step (b), the dispersant is one or more of acetone, alcohol, and dichloromethane, and the hydrophobic/oil nanoparticles are silica, titania, or alumina nanoparticles.
9. The method of preparing a quantum dot film according to claim 7, wherein in the step (b), the area of the pattern on the mask is 2 x 10 in array-9~3×10-6m2Circular, rectangular, square or prismatic.
10. The method for preparing the quantum dot film according to claim 6, wherein in the step (b), the quantum dot solution comprises 0.1-10% by mass of quantum dot particles, 1-10% by mass of a binder and 80-98.9% by mass of a volatile organic solvent, wherein the binder is one or more of organic glass, silica gel, epoxy resin or rubber; the volatile organic solvent is one or more of acetone, hexane, toluene and dichloromethane.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347419A (en) * 2010-08-03 2012-02-08 许凯淳 Light emitting diode (LED) multilayer packaging method and structure thereof
CN106935686A (en) * 2017-03-14 2017-07-07 华中科技大学 A kind of solution-type phosphor gel painting method and application
CN107170876A (en) * 2017-05-27 2017-09-15 南方科技大学 Preparation method of Micro LED display device
FR3043838B1 (en) * 2015-11-17 2018-06-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives PROCESS FOR PRODUCING A LAYER CONTAINING QUANTUM BOXES

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620686B2 (en) * 2015-01-28 2017-04-11 Apple Inc. Display light sources with quantum dots
US10128417B2 (en) * 2015-12-02 2018-11-13 Nanosys, Inc. Quantum dot based color conversion layer in display devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347419A (en) * 2010-08-03 2012-02-08 许凯淳 Light emitting diode (LED) multilayer packaging method and structure thereof
FR3043838B1 (en) * 2015-11-17 2018-06-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives PROCESS FOR PRODUCING A LAYER CONTAINING QUANTUM BOXES
CN106935686A (en) * 2017-03-14 2017-07-07 华中科技大学 A kind of solution-type phosphor gel painting method and application
CN107170876A (en) * 2017-05-27 2017-09-15 南方科技大学 Preparation method of Micro LED display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《A Facile Approach to Fabricate Patterned Surfaces for Enhancing Light Efficiency of COB-LEDs》;Xingjian Yu等;《 IEEE Transactions on Electron Devices 》;20170814;全文 *

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