CN109301093A - A kind of preparation method of conduction light-permeable perovskite quantum dot film - Google Patents
A kind of preparation method of conduction light-permeable perovskite quantum dot film Download PDFInfo
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- CN109301093A CN109301093A CN201811162106.6A CN201811162106A CN109301093A CN 109301093 A CN109301093 A CN 109301093A CN 201811162106 A CN201811162106 A CN 201811162106A CN 109301093 A CN109301093 A CN 109301093A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Abstract
The invention discloses a kind of preparation methods of conductive light-permeable perovskite quantum dot film, comprising steps of having the preparation of surface array micro-structure caster；The preparation and coating of hole transmission layer；The preparation and coating of quantum dot reaction solution；The imprinting moulding of quantum dot film；The preparation and coating of electron transfer layer；The surface vapor deposition treatment of quantum dot film；The surface grinding of quantum dot film is handled；A kind of preparation method of conductive light-permeable perovskite quantum dot film of the invention is realized the preparation of conductive film, is ground using surface, realized the light transmission of film using the surface treatment such as imprinting moulding and evaporation metal；Film light-permeable prepared by the present invention is conductive, and the method for preparation is high-efficient, precision is accurate, and manufacturing cost is low, is suitble to large-scale production.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of conduction light-permeable perovskite quantum dot film preparation side
Method.
Background technique
With the rapid development of display technology, people are higher and higher to the pursuit of display quality.Quantum dot (Quantum
Dots) compared to traditional LED, as a kind of novel fluorescent material, have narrow emission spectrum, exciting light spectrum width, quantum yield it is high,
The advantages that launch wavelength is adjustable is with a wide range of applications in fields such as illumination, solar batteries.
Full-inorganic perovskite quantum dot (CsPbX3, X=Cl, Br, I), simple, the energy-efficient, colour gamut with synthetic method
The advantages that covering is wide, color contrast is high, display is high-quality, but perovskite quantum dot is due to vulnerable to water oxygen molecule in air
Influence, make its molecular structure destroy, cause performance unstable, service life decline.The another difficult point of quantum dot display technology
Be, it is difficult to form high-precision quantum lattice array, currently, main quantum dot array preparation method be electric revulsion, print process,
All there are many defects in laser processing method, these manufacturing methods.Electric revulsion, print process precision be higher but higher cost, laser
Processing method is high-efficient but precision is poor.It is difficult to realize high quality, the production of large batch of quantum dot array.
In addition, most of existing quantum dot film is all to need back light, and the energy of light source as photoluminescent film
Amount is most of to scatter and disappear because generating heat, causes energy waste；And electroluminescent passes through the cause that is powered directly on quantum dot film
Make its shine, this just needs quantum dot film conductive, and mainly make at this stage quantum dot film conduction method be
Conducting particles is added in film, since conducting particles is unevenly distributed, leads to the conductive quantum dot film light of this method preparation
Uniformity it is poor.
Summary of the invention
In view of this, the present invention provides a kind of conductive light-permeable perovskites to solve above-mentioned the problems of the prior art
Quantum dot film preparation method is surface-treated using imprinting moulding and evaporation metal etc., realizes the preparation of conductive film, is used
Surface grinding, realizes the light transmission of film；Film light-permeable prepared by the present invention is conductive, and the method for preparation is high-efficient, smart
Degree is accurate, and manufacturing cost is low, is suitble to large-scale production.
To achieve the above object, technical scheme is as follows.
A kind of conduction light-permeable perovskite quantum dot film preparation method, comprising the following steps:
Step 1, the preparation with surface array micro-structure caster: existed using photoetching process and plasma etch process
Monocrystalline silicon surface processes micro-structure, the caster as surface imprint；
The preparation and coating of step 2, hole transmission layer: hole transport is used as using PEDOT and PSS water solution mixture
Layer, adds filtering head to filter PEDOT and PSS aqueous solution with syringe, adds suitable isopropyl acetone and adjusts viscosity, after centrifugal mixer
The mixed solution prepared is coated on electro-conductive glass, hole transmission layer is obtained；
The preparation and coating of step 3, quantum dot reaction solution: it prepares quantum dot material precursor solution and macromolecule is added
Material PMMA is mixed them thoroughly, and is stirred evenly, and is coated on the hole transport layer after vacuum defoamation, is obtained quantum dot layer；
The imprinting moulding of step 4, quantum dot film: coating one layer of PMMA colloid on quantum dot layer, with surface imprint mother
Template carries out surface imprint molding and solidifies to obtain the quantum dot layer with surface micro-structure array；
The preparation and coating of step 5, electron transfer layer: by TiO2Equal electron transport layer materials are dissolved in ethanol amine (EA)
In, the electron transfer layer solution prepared is spin-coated on quantum dot layer, electron transfer layer is obtained；
Step 6, the surface vapor deposition treatment of quantum dot film: vacuum is steamed on the quantum dot layer with surface micro-structure array
One layer of conductive metal is plated, makes its covering on the electron transport layer, obtains electrically conductive perovskite quantum dot film；
The surface grinding processing of step 7, quantum dot film: use surface grind technique by quantum dot film micro structure array
Middle protrusion structure division removal, obtains conductive light-permeable perovskite quantum dot film.
Further, surface array micro-structure caster is had by material monocrystalline silicon or silica in the step 1
It is made, with a thickness of 1~2cm；The photoetching process uses ultraviolet photolithographic technology, a length of 360~370nm of the ultraviolet light wave of use；
The etching gas of the plasma etch process uses CF4、CH3F and O2。
Further, the array microstructure is conical structure, the basal diameter of the conical structure is 0.2~
5um is highly 0.1~2um, and the distance between adjacent conical structure central axis is 0.5~8um.
Further, the volume ratio of the PEDOT:PSS aqueous solution in the step 2 is 20:1, and concentration is 1.3~1.7%,
The centrifugal mixer time is 3-10min；The hole transmission layer with a thickness of 20~500nm.
Further, the quantum dot in the step 3 is full-inorganic perovskite quantum dot；The vacuum defoamation time is 40
~50min；The coating method is spin coating or blade coating；The quantum dot layer is with a thickness of 100~2000nm.
Further, the configuration method of the quanta point material precursor solution in the step 3 are as follows: choose perovskite quantum
Point materials A BX3It is dissolved in dimethylformamide DMF solution, the ABX3Middle A is Cs, and B is Pb or Sn, X Cl, Br or I, institute
The molar ratio for stating A, B, X is 1:1:3；The concentration of the quanta point material precursor solution is 0.1~0.2g/mL.
Further, the PMMA colloid in the step 4 is with a thickness of 1.5~2um；The surface imprint caster is in PMMA
Imprinted on colloid, for coining angle vertical in PMMA colloid surface, coining dynamics is 0.05~0.1Mpa, imprint time for 10~
20s。
Further, the electron transport layer thickness in the step 5 is 20~500nm, and the electron transport layer materials are
BCP, ZnO, TPBI or TiO2。
Further, the vacuum evaporation conductive metal in the step 6 is silver, copper or aluminium, and the time of vacuum evaporation is 0.5
~1h, the vacuum evaporation layer with a thickness of 80~100nm.
Further, in the step 7 using surface grind technique when, vertically operated, hung down with quantum dot film
Histogram to the amount of feeding be 20~100nm.
Compared with the prior art, the invention has the advantages that and the utility model has the advantages that
(1) method of the invention is simple, high in machining efficiency, is solved using surface imprint technology and is difficult to be formed high-precision measurement
The problem of sub- dot matrix array structure, the color contrast of the quantum dot film of preparation was high, shows quality, it can be achieved that producing in enormous quantities
It is good.
(2) there is good electric conductivity using a kind of conductive light-permeable perovskite quantum dot film of the method for the present invention preparation
Can, simultaneously because the presence of surface array micro-structure, improves light-emitting uniformity, it can be on el light emitting device.
(3) using a kind of conductive light-permeable perovskite quantum dot film of the method for the present invention preparation, due to body before quantum dot
Liquid solution is wrapped up by one layer of PMMA colloid, improves the stability and service life of quantum dot film.
(4) using a kind of conductive light-permeable perovskite quantum dot film of the method for the present invention preparation, by changing grinding layer
The size that thickness can change light transmission hot spot changes light light intensity out, the strongly continuous production of high-volume darkening that can be convenient, flexible.
Detailed description of the invention
Fig. 1 is a kind of preparation method flow chart of conductive light-permeable perovskite quantum dot film of the invention.
Fig. 2 is of the invention with surface array micro-structure caster structural schematic diagram.
Fig. 3 is the quantum dot film structural schematic diagram with surface array micro-structure of the invention.
Fig. 4 is the quantum dot film structural schematic diagram after present invention coating electron transfer layer and vacuum evaporation conductive metal.
Fig. 5 is surface of the present invention quantum dot film structural schematic diagram after grinding.
Fig. 6 is the schematic diagram of application structure of conductive light-permeable perovskite quantum dot film in the embodiment of the present invention.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing and specific embodiment.It may be noted that
It is that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments, based on the reality in the present invention
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the scope of protection of the invention.
Embodiment 1
A kind of preparation method of conduction light-permeable perovskite quantum dot film, comprising the following steps:
Step 1, the preparation with surface array micro-structure caster: in one piece of a length of 5cm, width 3cm, with a thickness of 1cm
Monocrystalline silicon piece on, using ultraviolet photolithographic technology and plasma etch process, process the caster 21 with conical bore, make
For the caster of surface imprint, as shown in Fig. 2, wherein the wavelength of ultraviolet light is 365nm, power 350W, power density 30mW/
cm2, the etching gas of plasma etch process therein is using CF4、CH3F and O2, intracavitary pressure is 50Pa, and etching power is
150W, etch period 2min, CH3The flow of F is 25sccm, O2Flow be 10sccm, the basal diameter of conical bore is
0.2um, a height of 0.1um of conical bore, the distance between each conical bore central axis are 0.5um；
The preparation and coating of step 2, hole transmission layer: PEDOT and PSS aqueous solution is mixed according to the ratio of volume ratio 20:1
It closes, the concentration of mixture is 1.3%, then adds filtering head to filter with syringe, and the isopropyl acetone for adding 200ul adjusts viscosity, is changed
Become the adhesiveness of hole transmission layer, the mixed solution prepared is spin-coated on ITO electro-conductive glass 33 after centrifugal mixer 5min, revolves
Painting machine revolving speed is 3000r/s, and spin-coating time 30s obtains hole transmission layer 32, with a thickness of 20nm；
The preparation and coating of step 3, quantum dot reaction solution: selected quantum dot is perovskite quanta point material, is first claimed
Take 0.0742gPbCl2、0.1968gPbBr2, 0.036gCsCl and 0.0908gCsBr (its molar ratio is Cs:Pb:Cl:Br=1:
It 1:1:2) is dissolved in the DMF of 20mL and 2mL oleic acid and 1mL oleyl amine is added；By mixed liquor stirring and dissolving 10min, forerunner is made
Liquid solution；ITO electro-conductive glass 33 is fixed on spin coater, the perovskite quantum dot solution prepared is extracted with microliter syringe
And it is coated in the middle position of the finally obtained ITO electro-conductive glass 33 of the step 2 cleaned, spin coater spin coating 20s is opened, is obtained
To the quantum dot layer with a thickness of 1.5um, wherein spin coater revolving speed is 600r/min；
The imprinting moulding of step 4, quantum dot film: one layer of PMMA of spin coating on quantum dot layer, PMMA with a thickness of 100nm,
Spin coating proceeding is identical as the technique in step 2, carries out surface imprint molding simultaneously with the surface imprint caster processed in step 1
Solidify and obtain the perovskite quantum dot layer with surface array micro-structure (surface circular cone micro-structure 31), as shown in figure 3, wherein pressing
Print angle vertical in PMMA layers, curing time 2min；
The preparation and coating of step 5, electron transfer layer: by TiO2It is dissolved in ethanol amine (EA), after centrifugal mixer 5min,
The electron transfer layer solution prepared is spin-coated on the perovskite quantum dot layer that step 4 obtains, spin coater revolving speed is 3000r/
S, spin-coating time 30s obtain electron transfer layer 42, with a thickness of 20nm, as shown in Figure 4；
Step 6, the surface vapor deposition treatment of quantum dot film: true on the quantum dot layer with surface micro-structure in steps of 5
Sky one layer of 41 silver medal of conductive metal of vapor deposition, the time of vapor deposition are 0.5h, and the metal layer thickness of vapor deposition is 80nm, quantum dot array after vapor deposition
Column are that surface circular cone micro-structure 31 is wrapped up by vapor deposition layer conductive metal 41 and ITO electro-conductive glass 33, the quantum dot film after vapor deposition
Schematic diagram, as shown in Figure 4；
The surface grinding processing of step 7, quantum dot film: surface is carried out on the quantum dot film being deposited in step 6
Grinding processing, grinding layer is horizontal direction, grinding layer with a thickness of 20nm, expose quantum dot array after grinding, obtained conduction
Light-permeable perovskite quantum dot film schematic diagram, as shown in Figure 5；
Step 8, assembling electric power loop: the conductive light-permeable perovskite quantum dot film prepared in step 7 is accessed into direct current
In power circuit, DC voltage 6V, wherein ITO electro-conductive glass connects positive pole, and evaporation metal silver layer connects power cathode, group
The electric power loop schematic diagram of dress is as shown in Figure 6.
Embodiment 2
A kind of preparation method of conduction light-permeable perovskite quantum dot film, comprising the following steps:
Step 1, the preparation with surface array micro-structure caster: in one piece of a length of 5cm, width 3cm, with a thickness of 1cm
Monocrystalline silicon piece on, using ultraviolet photolithographic technology and plasma etch process, process the caster 21 with conical bore, make
For the caster of surface imprint, as shown in Fig. 2, wherein the wavelength of ultraviolet light is 360nm, power 340W, power density 25mW/
cm2, the etching gas of plasma etch process therein is using CF4、CH3F and O2, intracavitary pressure is 45Pa, and etching power is
140W, etch period 1min, CH3The flow of F is 20sccm, O2Flow be 10sccm, the basal diameter of conical bore is 3um,
A height of 1.8um of conical bore, the distance between each conical bore central axis are 6um；
The preparation and coating of step 2, hole transmission layer: PEDOT and PSS aqueous solution is mixed according to the ratio of volume ratio 20:1
It closes, the concentration of mixture is 1.5%, then adds filtering head to filter with syringe, and the isopropyl acetone for adding 250ul adjusts viscosity, is changed
Become the adhesiveness of hole transmission layer, the mixed solution prepared is spin-coated on electro-conductive glass after centrifugal mixer 5min, spin coater
Revolving speed is 4000r/s, and spin-coating time 25s obtains hole transmission layer 32, with a thickness of 100nm；
The preparation and coating of step 3, quantum dot reaction solution: selected quantum dot is perovskite quanta point material, is first claimed
Take 0.0742gPbCl2、0.1968gPbBr2, 0.036gCsCl and 0.0908gCsBr (its molar ratio is Cs:Pb:Cl:Br=1:
It 1:1:2) is dissolved in the DMF of 20mL and 3mL oleic acid and 2mL oleyl amine is added；By mixed liquor stirring and dissolving 20min, forerunner is made
Liquid solution；ITO electro-conductive glass 33 is fixed on spin coater, the perovskite quantum dot solution prepared is extracted with microliter syringe
And it is coated in the middle position of the ITO electro-conductive glass 33 cleaned, spin coater spin coating 30s is opened, is obtained with a thickness of 1.8um's
Quantum dot layer, wherein spin coater revolving speed is 600r/min；
The imprinting moulding of step 4, quantum dot film: one layer of PMMA of spin coating on quantum dot layer, PMMA with a thickness of 150nm,
Spin coating proceeding is identical as the technique in step 2, carries out surface imprint molding simultaneously with the surface imprint caster processed in step 1
Solidify and obtain the perovskite quantum dot layer with surface circular cone micro-structure 31, as shown in figure 3, wherein coining angle vertical is in PMMA
Layer, curing time 3min；
The preparation and coating of step 5, electron transfer layer: by TiO2It is dissolved in ethanol amine (EA), after centrifugal mixer 5min,
The electron transfer layer solution prepared is spin-coated on quantum dot layer, spin coater revolving speed is 4000r/s, and spin-coating time 25s is obtained
To electron transfer layer 42, with a thickness of 100nm, as shown in Figure 4；
Step 6, the surface vapor deposition treatment of quantum dot film: true on the quantum dot layer with surface micro-structure in steps of 5
Sky one layer of 41 silver medal of conductive metal of vapor deposition, the time of vapor deposition are 0.6h, and the metal layer thickness of vapor deposition is 90nm, quantum dot array after vapor deposition
Column are that surface circular cone micro-structure 31 is wrapped up by vapor deposition layer conductive metal 41 and ITO electro-conductive glass 33, the quantum dot film after vapor deposition
Schematic diagram, as shown in Figure 4；
The surface grinding processing of step 7, quantum dot film: surface is carried out on the quantum dot film being deposited in step 6
Grinding processing, grinding layer is horizontal direction, grinding layer with a thickness of 80nm, expose quantum dot array after grinding, obtained conduction
Light-permeable perovskite quantum dot film schematic diagram, as shown in Figure 5；
Step 8, assembling electric power loop: the conductive light-permeable perovskite quantum dot film prepared in step 7 is accessed into direct current
In power circuit, DC voltage 8V, wherein ITO electro-conductive glass connects positive pole, and evaporation metal silver layer connects power cathode, group
The electric power loop schematic diagram of dress is as shown in Figure 6.
Embodiment 3
A kind of preparation method of conduction light-permeable perovskite quantum dot film, comprising the following steps:
Step 1, the preparation with surface array micro-structure caster: in one piece of a length of 5cm, width 3cm, with a thickness of 1cm
Monocrystalline silicon piece on, using ultraviolet photolithographic technology and plasma etch process, process the caster 21 with conical bore, make
For the caster of surface imprint, as shown in Fig. 2, wherein the wavelength of ultraviolet light is 360nm, power 340W, power density 25mW/
cm2, the etching gas of plasma etch process therein is using CF4、CH3F and O2, intracavitary pressure is 55Pa, and etching power is
140W, etch period 1min, CH3The flow of F is 30sccm, O2Flow be 10sccm, the basal diameter of conical bore is 5um,
A height of 2um of conical bore, the distance between each conical bore central axis are 8um；
The preparation and coating of step 2, hole transmission layer: PEDOT and PSS aqueous solution is mixed according to the ratio of volume ratio 20:1
It closes, the concentration of mixture is 1.7%, then adds filtering head to filter with syringe, and the isopropyl acetone for adding 300ul adjusts viscosity, is changed
Become the adhesiveness of hole transmission layer, the mixed solution prepared is spin-coated on electro-conductive glass after centrifugal mixer 5min, spin coater
Revolving speed is 5000r/s, and spin-coating time 20s obtains hole transmission layer 32, with a thickness of 500nm；
The preparation and coating of step 3, quantum dot reaction solution: selected quantum dot is perovskite quanta point material, is first claimed
Take 0.0742gPbCl2、0.1968gPbBr2, 0.036gCsCl and 0.0908gCsBr (its molar ratio is Cs:Pb:Cl:Br=1:
It 1:1:2) is dissolved in the DMF of 20mL and 3.5mL oleic acid and 2.5mL oleyl amine is added；By mixed liquor stirring and dissolving 15min, it is made
Precursor solution；ITO electro-conductive glass 33 is fixed on spin coater, the perovskite quantum dot prepared is extracted with microliter syringe
Solution and the middle position for being coated in the ITO electro-conductive glass 33 cleaned are opened spin coater spin coating 15s, are obtained with a thickness of 2um
Quantum dot layer, wherein spin coater revolving speed be 550r/min；
The imprinting moulding of step 4, quantum dot film: one layer of PMMA of spin coating on quantum dot layer, PMMA with a thickness of 200nm,
Spin coating proceeding is identical as the technique in step 2, carries out surface imprint molding simultaneously with the surface imprint caster processed in step 1
Solidify and obtain the perovskite quantum dot layer with surface circular cone micro-structure 31, as shown in figure 3, wherein coining angle vertical is in PMMA
Layer, curing time 4min；
The preparation and coating of step 5, electron transfer layer: by TiO2It is dissolved in ethanol amine (EA), after centrifugal mixer 5min,
The electron transfer layer solution prepared is spin-coated on quantum dot layer, spin coater revolving speed is 5000r/s, and spin-coating time 20s is obtained
To electron transfer layer 42, with a thickness of 500nm, as shown in Figure 4；
Step 6, the surface vapor deposition treatment of quantum dot film: true on the quantum dot layer with surface micro-structure in steps of 5
Sky one layer of 41 silver medal of conductive metal of vapor deposition, the time of vapor deposition are 0.8h, and the metal layer thickness of vapor deposition is 100nm, quantum dot after vapor deposition
Array, that is, surface circular cone micro-structure 31 is wrapped up by vapor deposition layer conductive metal 41 and ITO electro-conductive glass 33, and the quantum dot after vapor deposition is thin
Film schematic diagram, as shown in Figure 4；
The surface grinding processing of step 7, quantum dot film: surface is carried out on the quantum dot film being deposited in step 6
Grinding processing, grinding layer is horizontal direction, grinding layer with a thickness of 100nm, expose quantum dot array after grinding, obtained conduction
Light-permeable perovskite quantum dot film schematic diagram, as shown in Figure 5；
Step 8, assembling electric power loop: the conductive light-permeable perovskite quantum dot film prepared in step 7 is accessed into direct current
In power circuit, DC voltage 12V, wherein ITO electro-conductive glass connects positive pole, and evaporation metal silver layer connects power cathode,
The electric power loop schematic diagram of assembling is as shown in Figure 6.
In conclusion a kind of conductive light-permeable perovskite quantum dot film preparation method of the invention, using imprinting moulding
It is surface-treated with evaporation metal etc., realizes the preparation of conductive film, be ground using surface, realize the light transmission of film；
Film light-permeable prepared by the present invention is conductive, and the method for preparation is high-efficient, precision is accurate, and manufacturing cost is low, is suitble to extensive raw
It produces.
Claims (10)
1. a kind of preparation method of conduction light-permeable perovskite quantum dot film, which comprises the following steps:
Step 1, the preparation with surface array micro-structure caster: using photoetching process and plasma etch process in monocrystalline
Silicon face processes micro-structure, the caster as surface imprint；
The preparation and coating of step 2, hole transmission layer: being used as hole transmission layer using PEDOT and PSS water solution mixture, will
PEDOT and PSS aqueous solution adds filtering head to filter with syringe, adds suitable isopropyl acetone and adjusts suitable coating viscosity, centrifugation is stirred
The mixed solution prepared is coated on electro-conductive glass after mixing, obtains hole transmission layer；
The preparation and coating of step 3, quantum dot reaction solution: it prepares quantum dot material precursor solution and high molecular material is added
PMMA is mixed them thoroughly, and is stirred evenly, and is coated on the hole transport layer after vacuum defoamation, is obtained quantum dot layer；
The imprinting moulding of step 4, quantum dot film: one layer of PMMA colloid is coated on quantum dot layer, with surface imprint caster
It carries out surface imprint molding and solidifies to obtain the quantum dot layer with surface array micro-structure；
The preparation and coating of step 5, electron transfer layer: by TiO2Equal electron transport layer materials are dissolved in ethanol amine (EA), will be made
The electron transfer layer solution got ready is spin-coated on quantum dot layer, obtains electron transfer layer；
Step 6, the surface vapor deposition treatment of quantum dot film: the vacuum evaporation one on the quantum dot layer with surface array micro-structure
Layer conductive metal makes its covering on the electron transport layer, obtains electrically conductive perovskite quantum dot film；
The surface grinding processing of step 7, quantum dot film: it will be protruded in quantum dot layer micro structure array using surface grind technique
Structure division removal, obtains conductive light-permeable perovskite quantum dot film.
2. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
Being made with surface array micro-structure caster of material monocrystalline silicon or silica in the step 1, with a thickness of 1~2cm；
The photoetching process uses ultraviolet photolithographic technology, a length of 360~370nm of the ultraviolet light wave of use；The plasma etching work
The etching gas of skill uses CF4、CH3F and O2。
3. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
The surface array micro-structure is conical structure, and it is highly 0.1~2um that the basal diameter of the conical structure, which is 0.2~5um,
The distance between adjacent conical structure central axis is 0.5~8um.
4. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
The volume ratio of PEDOT:PSS aqueous solution in the step 2 be 20:1, concentration be 1.3~1.7%, the centrifugal mixer time be 3 ~
10min；The hole transmission layer with a thickness of 20~500nm.
5. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
Quantum dot in the step 3 is full-inorganic perovskite quantum dot；The vacuum defoamation time is 40~50min；The coating
Method is spin coating or blade coating；The quantum dot layer is with a thickness of 100~2000nm.
6. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, which is characterized in that
The configuration method of quanta point material precursor solution in the step 3 are as follows: choose perovskite quanta point material ABX3It is dissolved in
In dimethylformamide DMF solution, the ABX3Middle A is Cs, and B is Pb or Sn, X Cl, Br or I, mole of described A, B, X
Than for 1:1:3；The concentration of the quanta point material precursor solution is 0.1~0.2g/mL.
7. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
PMMA colloid in the step 4 is with a thickness of 1.5~2um；The surface imprint caster imprints on PMMA colloid, imprints angle
For degree perpendicular to PMMA colloid surface, coining dynamics is 0.05~0.1Mpa, and imprint time is 10~20s.
8. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
Electron transport layer thickness in the step 5 is 20~500nm, the electron transport layer materials be BCP, ZnO, TPBI or
TiO2。
9. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, it is characterised in that:
Vacuum evaporation conductive metal in the step 6 is silver, copper or aluminium, and the time of vacuum evaporation is 0.5~1h, the vacuum evaporation
Layer with a thickness of 80~100nm.
10. a kind of preparation method of conductive light-permeable perovskite quantum dot film according to claim 1, feature exist
In: in the step 7 using surface grind technique when, operated perpendicular to quantum dot film, the amount of feeding of vertical direction
For 20~100nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950412A (en) * | 2019-04-03 | 2019-06-28 | 电子科技大学 | One kind being based on ultraviolet blending evaporation process perovskite light emitting diode and preparation method |
| CN110359022A (en) * | 2019-07-09 | 2019-10-22 | 淮阴工学院 | A method of optimization carrier conducting shell separation of charge efficiency |
| CN111048674A (en) * | 2019-11-26 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | Method for manufacturing light emitting device |
| CN112349868A (en) * | 2020-11-05 | 2021-02-09 | 安徽大学 | Perovskite light emitting diode with adjustable light field |
| EP3783659A1 (en) * | 2019-08-23 | 2021-02-24 | Saule Spolka Akcyjna | A photovoltaic device and a method for preparation thereof |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030084796A1 (en) * | 2001-11-07 | 2003-05-08 | Kwon Young Wan | Method for forming pattern using printing process |
| TW200621382A (en) * | 2004-10-22 | 2006-07-01 | Massachusetts Inst Technology | Method and system for transferring a patterned material |
| CN1877452A (en) * | 2005-06-07 | 2006-12-13 | Lg.菲利浦Lcd株式会社 | Device and method for manufacturing plate display device |
| CN101147239A (en) * | 2003-12-19 | 2008-03-19 | 北卡罗来纳大学查珀尔希尔分校 | Methods for fabricating isolated micro- and nano- structures using soft or imprint lithography |
| CN101320209A (en) * | 2008-07-07 | 2008-12-10 | 吉林大学 | Production method of surface conducting polymer graphic pattern |
| CN101378100A (en) * | 2007-08-29 | 2009-03-04 | 台达电子工业股份有限公司 | Light emitting diode device and manufacturing method thereof |
| JP2011006625A (en) * | 2009-06-29 | 2011-01-13 | Hitachi Chem Co Ltd | Photopolymerizable monomer composition, processed product with fine structure, and method for manufacturing the same |
| CN102472847A (en) * | 2009-07-16 | 2012-05-23 | 吉坤日矿日石能源株式会社 | Diffraction grating, organic EL element using same, and method for manufacturing said diffraction grating and organic EL element |
| CN102687591A (en) * | 2009-11-10 | 2012-09-19 | 住友化学株式会社 | Method for manufacturing organic electroluminescent element |
| KR20140026814A (en) * | 2012-08-23 | 2014-03-06 | 고려대학교 산학협력단 | Method of manufacturing a nano pattern structure and apparatus for manufacturing a nano pattern structure |
| CN104681742A (en) * | 2013-11-29 | 2015-06-03 | 清华大学 | Preparation method of organic light emitting diode |
| CN104681743A (en) * | 2013-11-29 | 2015-06-03 | 清华大学 | Preparation method of organic light emitting diode |
| CN106374051A (en) * | 2016-11-15 | 2017-02-01 | Tcl集团股份有限公司 | QLED, manufacturing method therefor and illuminating device |
| CN106531906A (en) * | 2016-11-22 | 2017-03-22 | Tcl集团股份有限公司 | Transfer printing method of quantum dot solid-state film and quantum dot transfer printing system |
| CN107068861A (en) * | 2016-07-15 | 2017-08-18 | 广东聚华印刷显示技术有限公司 | Electroluminescent device and its preparation method and application |
| CN107170876A (en) * | 2017-05-27 | 2017-09-15 | 南方科技大学 | A kind of preparation method of Micro light-emitting diode displays part |
| CN107316940A (en) * | 2017-06-01 | 2017-11-03 | 苏州大学 | Preparation method with the adjusted and controlled perovskite thin film of light and optics |
| CN107565021A (en) * | 2017-08-09 | 2018-01-09 | 吉林化工学院 | A kind of preparation method of stamping type perovskite solar cell and the battery |
| CN108563099A (en) * | 2018-01-18 | 2018-09-21 | 中国科学院上海光学精密机械研究所 | A kind of nano-imprint stamp preparation method |
-
2018
- 2018-09-30 CN CN201811162106.6A patent/CN109301093A/en active Pending
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030084796A1 (en) * | 2001-11-07 | 2003-05-08 | Kwon Young Wan | Method for forming pattern using printing process |
| CN101147239A (en) * | 2003-12-19 | 2008-03-19 | 北卡罗来纳大学查珀尔希尔分校 | Methods for fabricating isolated micro- and nano- structures using soft or imprint lithography |
| TW200621382A (en) * | 2004-10-22 | 2006-07-01 | Massachusetts Inst Technology | Method and system for transferring a patterned material |
| US20080001167A1 (en) * | 2004-10-22 | 2008-01-03 | Seth Coe-Sullivan | Light emitting device including semiconductor nanocrystals |
| CN1877452A (en) * | 2005-06-07 | 2006-12-13 | Lg.菲利浦Lcd株式会社 | Device and method for manufacturing plate display device |
| CN101378100A (en) * | 2007-08-29 | 2009-03-04 | 台达电子工业股份有限公司 | Light emitting diode device and manufacturing method thereof |
| CN101320209A (en) * | 2008-07-07 | 2008-12-10 | 吉林大学 | Production method of surface conducting polymer graphic pattern |
| JP2011006625A (en) * | 2009-06-29 | 2011-01-13 | Hitachi Chem Co Ltd | Photopolymerizable monomer composition, processed product with fine structure, and method for manufacturing the same |
| CN102472847A (en) * | 2009-07-16 | 2012-05-23 | 吉坤日矿日石能源株式会社 | Diffraction grating, organic EL element using same, and method for manufacturing said diffraction grating and organic EL element |
| US20120306357A1 (en) * | 2009-11-10 | 2012-12-06 | Agency For Science, Technology And Research | Method for manufacturing organic electroluminescent element |
| CN102687591A (en) * | 2009-11-10 | 2012-09-19 | 住友化学株式会社 | Method for manufacturing organic electroluminescent element |
| KR20140026814A (en) * | 2012-08-23 | 2014-03-06 | 고려대학교 산학협력단 | Method of manufacturing a nano pattern structure and apparatus for manufacturing a nano pattern structure |
| CN104681742A (en) * | 2013-11-29 | 2015-06-03 | 清华大学 | Preparation method of organic light emitting diode |
| CN104681743A (en) * | 2013-11-29 | 2015-06-03 | 清华大学 | Preparation method of organic light emitting diode |
| CN107068861A (en) * | 2016-07-15 | 2017-08-18 | 广东聚华印刷显示技术有限公司 | Electroluminescent device and its preparation method and application |
| CN106374051A (en) * | 2016-11-15 | 2017-02-01 | Tcl集团股份有限公司 | QLED, manufacturing method therefor and illuminating device |
| CN106531906A (en) * | 2016-11-22 | 2017-03-22 | Tcl集团股份有限公司 | Transfer printing method of quantum dot solid-state film and quantum dot transfer printing system |
| CN107170876A (en) * | 2017-05-27 | 2017-09-15 | 南方科技大学 | A kind of preparation method of Micro light-emitting diode displays part |
| CN107316940A (en) * | 2017-06-01 | 2017-11-03 | 苏州大学 | Preparation method with the adjusted and controlled perovskite thin film of light and optics |
| CN107565021A (en) * | 2017-08-09 | 2018-01-09 | 吉林化工学院 | A kind of preparation method of stamping type perovskite solar cell and the battery |
| CN108563099A (en) * | 2018-01-18 | 2018-09-21 | 中国科学院上海光学精密机械研究所 | A kind of nano-imprint stamp preparation method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950412A (en) * | 2019-04-03 | 2019-06-28 | 电子科技大学 | One kind being based on ultraviolet blending evaporation process perovskite light emitting diode and preparation method |
| CN109950412B (en) * | 2019-04-03 | 2020-06-05 | 电子科技大学 | Perovskite light-emitting diode based on ultraviolet blending evaporation process and preparation method |
| CN110359022A (en) * | 2019-07-09 | 2019-10-22 | 淮阴工学院 | A method of optimization carrier conducting shell separation of charge efficiency |
| CN110359022B (en) * | 2019-07-09 | 2020-10-27 | 淮阴工学院 | Method for optimizing charge separation efficiency of carrier conduction layer |
| EP3783659A1 (en) * | 2019-08-23 | 2021-02-24 | Saule Spolka Akcyjna | A photovoltaic device and a method for preparation thereof |
| CN111048674A (en) * | 2019-11-26 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | Method for manufacturing light emitting device |
| WO2021103061A1 (en) * | 2019-11-26 | 2021-06-03 | 深圳市华星光电半导体显示技术有限公司 | Preparation method for light-emitting device |
| CN112349868A (en) * | 2020-11-05 | 2021-02-09 | 安徽大学 | Perovskite light emitting diode with adjustable light field |
| CN112349868B (en) * | 2020-11-05 | 2021-12-24 | 安徽大学 | Perovskite light emitting diode with adjustable light field |
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