CN112608152A - 一种提高YVO4:Eu3+陶瓷发光强度的方法 - Google Patents

一种提高YVO4:Eu3+陶瓷发光强度的方法 Download PDF

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CN112608152A
CN112608152A CN202011500699.XA CN202011500699A CN112608152A CN 112608152 A CN112608152 A CN 112608152A CN 202011500699 A CN202011500699 A CN 202011500699A CN 112608152 A CN112608152 A CN 112608152A
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ceramic
yvo
luminous intensity
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张乐
甄方正
康健
张永丽
陈东顺
罗泽
陈浩
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Xinyi Xiyi High Tech Material Industry Technology Research Institute Co Ltd
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Abstract

一种提高YVO4:Eu3+陶瓷发光强度的方法，属于发光材料制备应用技术领域。其化学式为YVO4:0.05Eu3+,x wt.%LiF，其中1≤x≤2，通过热压法制备，LiF的加入增大了晶粒尺寸，结晶度增大，Li+部分取代Y3+，提高了发射强度。本发明制备的YVO4:Eu3+,LiF陶瓷相比未掺杂LiF的陶瓷发光强度提高了71.4%。本发明提供的制备方法工艺简单，产品性能稳定，适合工业化生产。

Description

一种提高YVO4:Eu3+陶瓷发光强度的方法
技术领域
本发明提供一种提高YVO4:Eu3+陶瓷发光强度的方法，属透明陶瓷制备应用技术领域。
背景技术
钒酸钇具有较高的密度和熔点，这对于在高热负荷和腐蚀性条件下工作的光学材料尤为重要。由于YVO4具有较大的化学惰性和在较宽光谱范围内的透明度，因此，研究人员和新的光学材料和器件的开发者对其相当感兴趣。此外，钒酸钇是有前途的稀土(RE)离子如Eu3+、Tb3+、Ho3+、Er3+、Yb3+、Nd3+的宿主基质，而且与其他基质的高泵浦辐射吸收特性不同。目前，用RE活化的材料已广泛应用于各个领域如发光陶瓷，是有前途的单晶和玻璃的替代品。传统上人们最关注的是钒酸钇晶体和掺杂钕离子用作激光介质、主动和被动光学元件。然而，使用铕离子(Eu3+)作为YVO4基体的激活离子也同样受到关注。YVO4:Eu3+是一种荧光粉，在光谱的红色区域发光，波长λ=580-740nm，由于发光强度高，持续时间长，发射光谱中存在窄带（最高5nm），亮度高，热稳定性好，被用于制造白光LED、彩色显像管、阴极射线管、汞灯、闪烁体探测器等。但是其应用的进一步扩展，受到发射强度的限制。
发明内容
1. 为了解决上述问题，本发明提供了一种提高YVO4:Eu3+陶瓷发光强度的方法，其化学式为YVO4:0.05Eu3+,x wt.%LiF，其中1≤x≤2，通过热压法制备，LiF的加入增大了晶粒尺寸，结晶度增大，Li+部分取代Y3+，提高了发射强度。本发明制备的YVO4:Eu3+, LiF陶瓷相比未掺杂LiF的陶瓷发光强度提高了77~80%。本发明提供的制备方法工艺简单，产品性能稳定，适合工业化生产。
2. 本发明的技术方案如下：
按照化学计量比称量纯度大于99.9%的以V2O5，Y2O5，LiF和Eu2O3的粉末为原料。研磨后在400~600℃下煅烧1~2h，然后在900~1050℃下煅烧1~3h。在1500~1600℃和30~40MPa的压力下，保压1~2小时，得到YVO4:Eu3+, LiF陶瓷。
有益效果
1. 本发明制备的YVO4:Eu3+, LiF陶瓷相比未掺杂LiF的陶瓷发光强度提高了71.4%。
2. 本发明提供的方法在制备陶瓷的过程中，选用高纯的原料粉体，并严格控制杂质的引入，非常适合用于该种陶瓷的制备。
3. 本发明提供的陶瓷的制备方法，产量和产率高，制备过程简单，对制备时间安排要求不苛刻，可有效提高产量和降低生产成本，非常适合工业化生产。
附图说明
图1实施例3制备的陶瓷XRD图谱；
图2实施例4制备粉体(未掺杂LiF粉体)的SEM图像；
图3实施例3制备粉体的SEM图像；
图4实施例3制备的陶瓷激发和发射光谱图。
具体实施方式
下面结合具体实例对本发明做进一步的说明，但不应以此限制本发明的保护范围。
实施例1：YVO4:0.05Eu3+，1 wt.%LiF
按照化学计量比称量纯度大于99.9%的以V2O5，Y2O5，LiF和Eu2O3的粉末为原料。研磨后在400℃下煅烧2h，然后在900℃下煅烧3h。在1500℃和40MPa的压力下，保压1小时，得到YVO4:Eu3+, LiF陶瓷。
实施例2：YVO4:0.05Eu3+，1.5 wt.%LiF
按照化学计量比称量纯度大于99.9%的以V2O5，Y2O5，LiF和Eu2O3的粉末为原料。研磨后在600℃下煅烧1h，然后在1050℃下煅烧1h。在1600℃和30MPa的压力下，保压2小时，得到YVO4:Eu3+, LiF陶瓷。
实施例3：YVO4:0.05Eu3+，2 wt.%LiF
按照化学计量比称量纯度大于99.9%的以V2O5，Y2O5，LiF和Eu2O3的粉末为原料。研磨后在500℃下煅烧1.5h，然后在1000℃下煅烧2h。在1550℃和35MPa的压力下，保压1.5小时，得到YVO4:Eu3+, LiF陶瓷。
实施例4：YVO4:0.05Eu3+
按照化学计量比称量纯度大于99.9%的以V2O5，Y2O5和Eu2O3的粉末为原料。研磨后在500℃下煅烧1.5h，然后在1000℃下煅烧2h。在1550℃和35MPa的压力下，保压1.5小时，得到YVO4:Eu3+陶瓷。
由图1中的XRD图谱可以看出，对比YVO4的PDF标准卡片（JCPDS,NO.17-0341）和未添加LiF的粉体的XRD，没有其它杂峰，说明Li+进入YVO4的晶格中，证明通过本发明提供的方法成功合成了纯相的YVO4:Eu3+, LiF陶瓷。根据图2和图3荧光粉的SEM图像对比显示，LiF的加入会使陶瓷的平均晶粒尺寸从5微米增加到7微米，结晶度更高。激发光谱(图4a)包括300-350nm区域的宽带，对应于电荷转移V-O和主基质的吸收，以及反映Eu3+离子内部的过渡的较长波长区域的几条窄线。LiF的加入导致300-350nm区域的频带变宽，增加了发光强度，从图中可以看出其发光强度增加了71.4%。在发射光谱上(图4b)，有与Eu3+离子在4f壳内的电子转换相关的窄带可以看出加入LiF的样品的发光强度是没有加入LiF的样品的1.8倍。LiF的加入导致样品结晶度的增加，从而增强了光学转换。此外，Li+离子部分取代了Y3+离子，导致大量的氧离子空位，这些氧空位在向Eu3+离子传递能量时，可以作为敏化剂。因此本发明的方法有效地提高了YVO4:Eu3+陶瓷的发光强度，提高了其作为发光陶瓷的发光性能。
最后需要说明的是，以上实施例仅用以说明本发明的技术方案而非限制。尽管参照上述实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的范围，其均应涵盖在本发明的权利要求范围中。

Claims (2)

1.一种提高YVO4:Eu3+陶瓷发光强度的方法，其特征在于，所制备的荧光粉满足下式所示组分：
YVO4:0.05Eu3+,x wt.%LiF
其中1≤x≤2；采用热压制法制备，具体步骤如下：
按照化学计量比称量纯度大于99.9%的以V2O5，Y2O5，LiF和Eu2O3的粉末为原料；研磨后在400~600℃下煅烧1~2h，然后在900~1050℃下煅烧1~3h；在1500~1600℃和30~40MPa的压力下，保压1~2小时，得到YVO4:Eu3+, LiF陶瓷。
2.一种提高YVO4:Eu3+陶瓷，其特征在于，按权利要求1所述的制备方法制备而成，制备的YVO4:Eu3+, LiF陶瓷相比未掺杂LiF的陶瓷发光强度提高了71.4%。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484382A (en) * 1966-05-02 1969-12-16 Gen Electric Treatment of recrystallized yvo4:eu luminescent materials
US3808148A (en) * 1971-02-04 1974-04-30 Commissariat Energie Atomique Thermoluminescent lithium fluoride
CN101338195A (zh) * 2007-07-05 2009-01-07 索尼株式会社 荧光体、使用其的荧光灯、以及使用荧光灯的显示装置和照明装置
CN103059861A (zh) * 2013-01-23 2013-04-24 上海应用技术学院 一种红色YVO4：Eu3+发光微球及其制备方法
CN105062483A (zh) * 2015-08-04 2015-11-18 江西科技学院 一种水腐蚀红色YVO4:Eu3+发光材料及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484382A (en) * 1966-05-02 1969-12-16 Gen Electric Treatment of recrystallized yvo4:eu luminescent materials
US3808148A (en) * 1971-02-04 1974-04-30 Commissariat Energie Atomique Thermoluminescent lithium fluoride
CN101338195A (zh) * 2007-07-05 2009-01-07 索尼株式会社 荧光体、使用其的荧光灯、以及使用荧光灯的显示装置和照明装置
CN103059861A (zh) * 2013-01-23 2013-04-24 上海应用技术学院 一种红色YVO4：Eu3+发光微球及其制备方法
CN105062483A (zh) * 2015-08-04 2015-11-18 江西科技学院 一种水腐蚀红色YVO4:Eu3+发光材料及其制备方法

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Title
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