CN112543997A - 阵列基板及其制造方法 - Google Patents
阵列基板及其制造方法 Download PDFInfo
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- CN112543997A CN112543997A CN201980001110.0A CN201980001110A CN112543997A CN 112543997 A CN112543997 A CN 112543997A CN 201980001110 A CN201980001110 A CN 201980001110A CN 112543997 A CN112543997 A CN 112543997A
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- 239000000758 substrate Substances 0.000 title claims abstract description 129
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- 238000000059 patterning Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 35
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 263
- 239000010936 titanium Substances 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 21
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 14
- 238000005452 bending Methods 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
本公开提供一种阵列基板及其制造方法，该阵列基板的制造方法，包括：提供衬底基板；在衬底基板的第一表面形成第一有源层，第二有源层；在所述第二有源层的远离所述衬底基板的一侧形成第二栅极；在所述第二栅极的远离所述衬底基板的一侧形成第一绝缘层，所述第一绝缘层还覆盖所述第一有源层；对所述第一绝缘层图案化以在所述第二栅极的两侧形成第一通孔以暴露所述第二有源层；在所述第一通孔中以及所述第一绝缘层的远离所述衬底基板的表面上沉积第一金属层；对所述第一金属层图案化，去除所述第一金属层位于所述第一有源层上方的至少一部分，以暴露所述第一绝缘层；利用图案化的第一金属层作为掩膜刻蚀所述第一绝缘层，在所述第一有源层上方形成第二通孔以暴露所述第一有源层；对露出的第一有源层进行清洗。
Description
PCT国内申请，说明书已公开。
Claims (13)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/097131 WO2021012158A1 (zh) | 2019-07-22 | 2019-07-22 | 阵列基板及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112543997A true CN112543997A (zh) | 2021-03-23 |
| CN112543997B CN112543997B (zh) | 2024-03-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980001110.0A Active CN112543997B (zh) | 2019-07-22 | 2019-07-22 | 阵列基板及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11798959B2 (zh) |
| CN (1) | CN112543997B (zh) |
| WO (1) | WO2021012158A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040149990A1 (en) * | 2000-10-11 | 2004-08-05 | Sung-Hun Oh | Array substrate for a liquid crystal display and method for fabricating thereof |
| CN108231795A (zh) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | 阵列基板、制作方法、显示面板及显示装置 |
| CN108231674A (zh) * | 2018-02-05 | 2018-06-29 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管阵列基板及其制造方法 |
| WO2018192052A1 (zh) * | 2017-04-17 | 2018-10-25 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板结构及阵列基板的制备方法 |
| US20190103423A1 (en) * | 2017-09-30 | 2019-04-04 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method for thin film transistor array substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI598670B (zh) | 2014-11-25 | 2017-09-11 | 友達光電股份有限公司 | 顯示面板之畫素結構 |
| KR102542177B1 (ko) | 2016-03-15 | 2023-06-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이를 구비한 전자 기기 |
| CN106847834B (zh) * | 2017-03-30 | 2019-05-10 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板 |
| CN107507841B (zh) | 2017-09-22 | 2021-01-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| CN107818991B (zh) | 2017-10-23 | 2020-06-05 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板 |
-
2019
- 2019-07-22 US US16/965,495 patent/US11798959B2/en active Active
- 2019-07-22 CN CN201980001110.0A patent/CN112543997B/zh active Active
- 2019-07-22 WO PCT/CN2019/097131 patent/WO2021012158A1/zh active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040149990A1 (en) * | 2000-10-11 | 2004-08-05 | Sung-Hun Oh | Array substrate for a liquid crystal display and method for fabricating thereof |
| WO2018192052A1 (zh) * | 2017-04-17 | 2018-10-25 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板结构及阵列基板的制备方法 |
| US20190103423A1 (en) * | 2017-09-30 | 2019-04-04 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method for thin film transistor array substrate |
| CN108231795A (zh) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | 阵列基板、制作方法、显示面板及显示装置 |
| CN108231674A (zh) * | 2018-02-05 | 2018-06-29 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管阵列基板及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021012158A1 (zh) | 2021-01-28 |
| US20230163145A1 (en) | 2023-05-25 |
| US11798959B2 (en) | 2023-10-24 |
| CN112543997B (zh) | 2024-03-19 |
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