CN112542995B - High-output-power millimeter wave frequency doubler and output method thereof - Google Patents

High-output-power millimeter wave frequency doubler and output method thereof Download PDF

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CN112542995B
CN112542995B CN202011416010.5A CN202011416010A CN112542995B CN 112542995 B CN112542995 B CN 112542995B CN 202011416010 A CN202011416010 A CN 202011416010A CN 112542995 B CN112542995 B CN 112542995B
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transistor
capacitor
output
frequency
inductance
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CN112542995A (en
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杨澄思
朱欣恩
卢煜旻
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Sijie Microelectronics Xiamen Co ltd
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Shanghai Silicon Microelectronics Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device

Abstract

The invention discloses a high-output power millimeter wave frequency doubler and the output thereofThe method for outputting the high-output power millimeter wave frequency doubler comprises the following steps of S1: the input differential signal and fundamental wave signal IN1 with frequency f are input to the input end of the first transistor to form a frequency-doubled current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input end of the second transistor to form a frequency-doubled current signal I with frequency 2f2f2. The high-output-power millimeter wave frequency doubler and the output method thereof disclosed by the invention have the advantages that the output power of the frequency doubler is improved on the premise of lower power consumption and simple structure, the design requirement of a high-performance microwave millimeter wave source is met, and the high-output-power millimeter wave frequency doubler and the output method thereof have better application prospects.

Description

High-output-power millimeter wave frequency doubler and output method thereof
Technical Field
The invention belongs to the technical field of millimeter wave frequency multipliers, and particularly relates to a high-output-power millimeter wave frequency doubler and an output method thereof.
Background
With the rapid development of millimeter wave wireless communication systems in recent years, the application of millimeter wave frequency sources is more and more popular, and the demand is more and more urgent. However, the directly obtained high frequency source often cannot meet the requirements of the communication system in terms of frequency stability, phase noise and the like, so that a frequency multiplier is required to implement the high frequency source. As the most basic constituent block in the high-frequency source, the frequency multiplier plays a role of boosting the frequency of an input signal to a higher frequency band. The frequency multiplier should have a wider frequency coverage range and larger output power on the premise of ensuring power consumption so as to meet the requirements of different applications.
Common structures of frequency multipliers include a push-push frequency multiplier, a single-tube frequency multiplier, a self-mixing frequency multiplier, an injection locking frequency multiplier and the like. The single-tube frequency multiplier only adopts a pair of transistors, so that the single-tube frequency multiplier is simple in structure, stable in performance and easy to design. However, with the increase of frequency, especially in microwave and millimeter wave frequency bands, the weak point of the output power of the single-tube frequency multiplier is that it cannot meet the system requirements, and usually a post-amplifier is required, which increases power consumption, layout area and stability, so that the application is limited.
Therefore, the above problems are further improved.
Disclosure of Invention
The invention mainly aims to provide a high-output-power millimeter wave frequency doubler and an output method thereof, which improve the output power of the frequency doubler on the premise of lower power consumption and simple structure, meet the design requirement of a high-performance microwave millimeter wave source and have better application prospect.
Another object of the present invention is to provide a high output power millimeter wave frequency doubler and an output method thereof, wherein an inductor is connected in parallel to an input terminal and an output terminal of a transistor, and forms resonance with a capacitor parasitic on the input terminal and the output terminal, so that the output terminal presents a high impedance in a second harmonic frequency band; therefore, the second harmonic current generated by nonlinearity of the input transistor cannot flow back to the input end through the parasitic capacitor, the proportion of the second harmonic current flowing to the load is improved, and the power loss is reduced, so that the output power is increased; suitable for microwave and millimeter wave frequency sources.
In order to achieve the above object, the present invention provides an output method of a high-output millimeter wave frequency doubler, which is used for increasing the output power of the frequency doubler on the basis of low power consumption and simple structure, and comprises the following steps:
step S1: the input differential signal and fundamental wave signal IN1 with frequency f are input to the input terminal of the first transistor (due to the nonlinearity of the first transistor) to form a double frequency current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input of the second transistor (due to the non-linearity of the second transistor) to form a frequency-doubled current signal I with frequency 2f2f2；
Step S2: the first transistor outputs a double frequency current signal I at an output end2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And the output of the first transistor and the output of the second transistor are connected at a connection point a to form a first total output current signal IOUT1And the first total output current signal I isOUTThe signal is transmitted to an output matching circuit for output;
step S3: a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and tuningFirst inductance L1So that the first LC resonance is at (near) 2f frequency, a first inductance L is connected between the input and output terminals of the first transistor1To form a first LC resonance and adjust a first inductance L1Such that the first LC resonance is at (near) the 2f frequency, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
As a further preferable embodiment of the above technical means, step S2 is specifically implemented as the following steps:
step S2.1: the first transistor comprises a (parasitic) capacitance CBC1And (parasitic) capacitance CBE1And a transistor Q1, a capacitor CBC1A capacitor C connected between the base and collector of the transistor Q1BE1A capacitor C connected between the base and emitter of the transistor Q1BC1Generating a current I1；
Step S2.2: the second transistor comprising a (parasitic) capacitor CBC2And (parasitic) capacitance CBE2And a transistor Q2, a capacitor CBC2A capacitor C connected between the base and collector of the transistor Q2BE2A capacitor C connected between the base and emitter of the transistor Q2BC2Generating a current I2；
Step S2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
As a further preferable embodiment of the above technical means, step S3 is specifically implemented as the following steps:
step S3.1: first inductance L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Is adjusted so that the first LC resonance is at (near) the 2f frequency;
step S3.2: second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
step S3.3: the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
step S3.4: second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
As a further preferable embodiment of the above technical solution, the step S2 is further embodied as the following step:
step T2.1: the first transistor comprises a (parasitic) capacitance CGD1And (parasitic) capacitance CGS1And field effect transistor Q1, capacitor CGD1A capacitor C connected between the gate and drain of the field effect transistor Q1GS1A capacitor C connected between the gate and source of the field effect transistor Q1GD1Generating a current I1；
Step T2.2: the second transistor comprising a (parasitic) capacitor CGD2And (parasitic) capacitance CGS2And field effect transistor Q2, capacitor CGD2A capacitor C connected between the gate and drain of the field effect transistor Q2GS2A capacitor C connected between the gate and source of the field effect transistor Q2GD2Generating a current I2；
Step T2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
As a further preferable embodiment of the above technical solution, the step S3 is further embodied as the following step:
step T3.1: first inductance L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Capacitance value ofThe adjustment is made so that the first LC resonance is at (near) the 2f frequency;
step T3.2: second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
step T3.3: the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
step T3.4: second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
In order to achieve the above object, the present invention further provides a high output power millimeter wave frequency doubler, which comprises a first transistor, a second transistor, and a first inductor L1A second inductor L2And an output matching circuit:
the input differential signal and fundamental wave signal IN1 with frequency f are input to the input terminal of the first transistor (due to the nonlinearity of the first transistor) to form a double frequency current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input of the second transistor (due to the non-linearity of the second transistor) to form a frequency-doubled current signal I with frequency 2f2f2；
The first transistor outputs a double frequency current signal I at an output end2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And the output of the first transistor and the output of the second transistor are connected at a connection point a to form a first total output current signal IOUT1And the first total output current signal I isOUTThe signal is transmitted to an output matching circuit for output;
a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at (near) the 2f frequency, the input and the output of the first transistorA first inductor L is connected between the ends1To form a first LC resonance and adjust a first inductance L1Such that the first LC resonance is at (near) the 2f frequency, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
As a further preferable mode of the above mode, the first transistor includes a (parasitic) capacitor CBC1And (parasitic) capacitance CBE1And a transistor Q1, a capacitor CBC1A capacitor C connected between the base and collector of the transistor Q1BE1A capacitor C connected between the base and emitter of the transistor Q1BC1Generating a current I1；
The second transistor comprising a (parasitic) capacitor CBC2And (parasitic) capacitance CBE2And a transistor Q2, a capacitor CBC2A capacitor C connected between the base and collector of the transistor Q2BE2A capacitor C connected between the base and emitter of the transistor Q2BC2Generating a current I2；
Step S2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
As a more preferable aspect of the above aspect, the first inductor L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Is adjusted so that the first LC resonance is at (near) the 2f frequency;
second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
As a further preferable mode of the above mode, the first transistor includes a (parasitic) capacitor CGD1And (parasitic) capacitance CGS1And field effect transistor Q1, capacitor CGD1A capacitor C connected between the gate and drain of the field effect transistor Q1GS1A capacitor C connected between the gate and source of the field effect transistor Q1GD1Generating a current I1；
The second transistor comprising a (parasitic) capacitor CGD2And (parasitic) capacitance CGS2And field effect transistor Q2, capacitor CGD2A capacitor C connected between the gate and drain of the field effect transistor Q2GS2A capacitor C connected between the gate and source of the field effect transistor Q2GD2Generating a current I2；
First total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
As a more preferable aspect of the above aspect, the first inductor L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Is adjusted so that the first LC resonance is at (near) the 2f frequency;
second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
second total outputCurrent signal (approximately equal to) IOUT2＝I2f1+I2f2(greatly reducing the loss of output power).
Drawings
Fig. 1 is a schematic structural diagram of a high-output-power millimeter wave frequency doubler and an output method thereof according to a first embodiment and a second embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a high-output-power millimeter wave frequency doubler and an output method thereof according to a first embodiment of the invention.
Fig. 3 is a schematic structural diagram of a high-output-power millimeter wave frequency doubler and an output method thereof according to a second embodiment of the invention.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
In the preferred embodiment of the present invention, those skilled in the art should note that the capacitance and inductance, etc. involved in the present invention can be regarded as the prior art.
A first embodiment.
The invention discloses an output method of a high-output-power millimeter wave frequency doubler, which is used for improving the output power of the frequency doubler on the basis of low power consumption and simple structure and comprises the following steps:
step S1: the input differential signal and fundamental wave signal IN1 with frequency f are input to the input terminal of the first transistor (due to the nonlinearity of the first transistor) to form a double frequency current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input of the second transistor (due to the non-linearity of the second transistor) to form a frequency-doubled current signal I with frequency 2f2f2；
Step S2: the first transistor is connected to the output terminalProduce a double frequency current signal I2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And the output of the first transistor and the output of the second transistor are connected at a connection point a to form a first total output current signal IOUT1And the first total output current signal I isOUTThe signal is transmitted to an output matching circuit for output;
step S3: a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at (near) 2f frequency, a first inductance L is connected between the input and output terminals of the first transistor1To form a first LC resonance and adjust a first inductance L1Such that the first LC resonance is at (near) the 2f frequency, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
Specifically, step S2 is implemented as the following steps:
step S2.1: the first transistor comprises a (parasitic) capacitance CBC1And (parasitic) capacitance CBE1And a transistor Q1, a capacitor CBC1A capacitor C connected between the base and collector of the transistor Q1BE1A capacitor C connected between the base and emitter of the transistor Q1BC1Generating a current I1；
Step S2.2: the second transistor comprising a (parasitic) capacitor CBC2And (parasitic) capacitance CBE2And a transistor Q2, a capacitor CBC2A capacitor C connected between the base and collector of the transistor Q2BE2A capacitor C connected between the base and emitter of the transistor Q2BC2Generating a current I2；
Step S2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
More specifically, step S3 is specifically implemented as the following steps:
step S3.1: first inductance L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Is adjusted so that the first LC resonance is at (near) the 2f frequency;
step S3.2: second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
step S3.3: the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
step S3.4: second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
Preferably, the ground terminal of the first transistor is electrically connected to the ground terminal of the second transistor.
Preferably, the output matching circuit comprises an inductor LMAnd a capacitor CMThe connection point A passes through an inductor LMConnected with a power supply end VDD, and a connection point A passes through a capacitor CMAnd (6) outputting.
The invention also discloses a high-output power millimeter wave frequency doubler which comprises a first transistor, a second transistor and a first inductor L1A second inductor L2And an output matching circuit:
the input differential signal and fundamental wave signal IN1 with frequency f are input to the input terminal of the first transistor (due to the nonlinearity of the first transistor) to form a double frequency current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input of the second transistor (due to the non-linearity of the second transistor) to form a frequency-doubled current signal I with frequency 2f2f2；
The first transistor is at the outputThe output end outputs a frequency-doubled current signal I2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And the output of the first transistor and the output of the second transistor are connected at a connection point a to form a first total output current signal IOUT1And the first total output current signal I isOUTThe signal is transmitted to an output matching circuit for output;
a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at (near) 2f frequency, a first inductance L is connected between the input and output terminals of the first transistor1To form a first LC resonance and adjust a first inductance L1Such that the first LC resonance is at (near) the 2f frequency, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
In particular, the first transistor comprises a (parasitic) capacitance CBC1And (parasitic) capacitance CBE1And a transistor Q1, a capacitor CBC1A capacitor C connected between the base and collector of the transistor Q1BE1A capacitor C connected between the base and emitter of the transistor Q1BC1Generating a current I1；
The second transistor comprising a (parasitic) capacitor CBC2And (parasitic) capacitance CBE2And a transistor Q2, a capacitor CBC2A capacitor C connected between the base and collector of the transistor Q2BE2A capacitor C connected between the base and emitter of the transistor Q2BC2Generating a current I2；
Step S2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
More specifically, the first inductance L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1Is connected toAn output terminal of an input terminal of the first transistor), and a first inductance L1According to the inductance of the capacitor CBC1Is adjusted so that the first LC resonance is at (near) the 2f frequency;
second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
Preferably, the ground terminal of the first transistor is electrically connected to the ground terminal of the second transistor.
Preferably, the output matching circuit comprises an inductor LMAnd a capacitor CMThe connection point A passes through an inductor LMConnected with a power supply end VDD, and a connection point A passes through a capacitor CMAnd (6) outputting.
A second embodiment.
The invention discloses an output method of a high-output-power millimeter wave frequency doubler, which is used for improving the output power of the frequency doubler on the basis of low power consumption and simple structure and comprises the following steps:
step S1: the input differential signal and fundamental wave signal IN1 with frequency f are input to the input terminal of the first transistor (due to the nonlinearity of the first transistor) to form a double frequency current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input of the second transistor (due to the non-linearity of the second transistor) to form a frequency-doubled current signal I with frequency 2f2f2；
Step S2: the first transistor outputs a double frequency current signal I at an output end2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And an output terminal of the first transistorAnd the output terminal of the second transistor is connected at a connection point A to form a first total output current signal IOUT1And the first total output current signal I isOUTThe signal is transmitted to an output matching circuit for output;
step S3: a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at (near) 2f frequency, a first inductance L is connected between the input and output terminals of the first transistor1To form a first LC resonance and adjust a first inductance L1Such that the first LC resonance is at (near) the 2f frequency, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
Specifically, step S2 is further embodied as the following steps:
step T2.1: the first transistor comprises a (parasitic) capacitance CGD1And (parasitic) capacitance CGS1And field effect transistor Q1, capacitor CGD1A capacitor C connected between the gate and drain of the field effect transistor Q1GS1A capacitor C connected between the gate and source of the field effect transistor Q1GD1Generating a current I1；
Step T2.2: the second transistor comprising a (parasitic) capacitor CGD2And (parasitic) capacitance CGS2And field effect transistor Q2, capacitor CGD2A capacitor C connected between the gate and drain of the field effect transistor Q2GS2A capacitor C connected between the gate and source of the field effect transistor Q2GD2Generating a current I2；
Step T2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
More specifically, step S3 is further embodied as the following steps:
step T3.1: first inductance L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Is adjusted so that the first LC resonance is at (near) the 2f frequency;
step T3.2: second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
step T3.3: the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
step T3.4: second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
Preferably, the ground terminal of the first transistor is electrically connected to the ground terminal of the second transistor.
Preferably, the output matching circuit comprises an inductor LMAnd a capacitor CMThe connection point A passes through an inductor LMConnected with a power supply end VDD, and a connection point A passes through a capacitor CMAnd (6) outputting.
The invention also discloses a high-output power millimeter wave frequency doubler which comprises a first transistor, a second transistor and a first inductor L1A second inductor L2And an output matching circuit:
the input differential signal and fundamental wave signal IN1 with frequency f are input to the input terminal of the first transistor (due to the nonlinearity of the first transistor) to form a double frequency current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input of the second transistor (due to the non-linearity of the second transistor) to form a frequency-doubled current signal I with frequency 2f2f2；
The first transistor outputs a double frequency current signal I at an output end2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And a firstThe output terminal of one transistor and the output terminal of the second transistor are connected at a connection point A to form a first total output current signal IOUT1And the first total output current signal I isOUTThe signal is transmitted to an output matching circuit for output;
a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at (near) 2f frequency, a first inductance L is connected between the input and output terminals of the first transistor1To form a first LC resonance and adjust a first inductance L1Such that the first LC resonance is at (near) the 2f frequency, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
In particular, the first transistor comprises a (parasitic) capacitance CGD1And (parasitic) capacitance CGS1And field effect transistor Q1, capacitor CGD1A capacitor C connected between the gate and drain of the field effect transistor Q1GS1A capacitor C connected between the gate and source of the field effect transistor Q1GD1Generating a current I1；
The second transistor comprising a (parasitic) capacitor CGD2And (parasitic) capacitance CGS2And field effect transistor Q2, capacitor CGD2A capacitor C connected between the gate and drain of the field effect transistor Q2GS2A capacitor C connected between the gate and source of the field effect transistor Q2GD2Generating a current I2；
First total output current signal IOUT1＝I2f1+I2f2-I1-I2(the presence of parasitic capacitance reduces the output power).
More specifically, the first inductance L1Connected in parallel to a capacitor CBC1Is connected to the two ends (i.e. the first inductance L)1An output terminal connected to an input terminal of the first transistor), and a first inductor L1According to the inductance of the capacitor CBC1Is adjusted to the capacitance value ofSo that the first LC resonance is at (near) the 2f frequency;
second inductance L2Connected in parallel to a capacitor CBC2Is connected to the two terminals (i.e. the second inductance L)2An output terminal connected to an input terminal of the second transistor), and a second inductor L2According to the inductance of the capacitor CBC2Is adjusted so that the second LC resonance is at (near) the 2f frequency;
the connection point A is in a high impedance state, so that the current I1And current I2(substantial) reduction;
second total output current signal (approximately equal to)OUT2＝I2f1+I2f2(greatly reducing the loss of output power).
Preferably, the output matching circuit comprises an inductor LMAnd a capacitor CMThe connection point A passes through an inductor LMConnected with a power supply end VDD, and a connection point A passes through a capacitor CMAnd (6) outputting.
Preferably, the ground terminal of the first transistor is electrically connected to the ground terminal of the second transistor.
It is preferred that equivalents and obvious modifications to the disclosure and drawings shall be recognized as included within the scope of this patent. The transistor shall cover all transistors capable of generating non-linear current under the action of input signal, i.e. transistors with non-linear voltage-current characteristic (I-V curve), such as CMOS transistor, BJT transistor and HBT transistor, etc., which shall be in the scope of patent protection.
It should be noted that the technical features such as capacitance and inductance related to the present patent application should be regarded as the prior art, and the specific structure, the operation principle, the control mode and the spatial arrangement mode of the technical features may be selected conventionally in the field, and should not be regarded as the invention point of the present patent, and the present patent is not further specifically described in detail.
It will be apparent to those skilled in the art that modifications and equivalents may be made in the embodiments and/or portions thereof without departing from the spirit and scope of the present invention.

Claims (10)

1. An output method of a high-output-power millimeter wave frequency doubler is used for improving the output power of the frequency doubler on the basis of low power consumption and simple structure, and is characterized by comprising the following steps:
step S1: the input differential signal and fundamental wave signal IN1 with frequency f are input to the input end of the first transistor to form a frequency-doubled current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input end of the second transistor to form a frequency-doubled current signal I with frequency 2f2f2；
Step S2: the first transistor outputs a double frequency current signal I at an output end2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And the output of the first transistor and the output of the second transistor are connected at a connection point a to form a first total output current signal IOUT1And the first total output current signal I isOUT1The signal is transmitted to an output matching circuit for output;
step S3: a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at 2f frequency, a second inductance L being connected between the input and output of the second transistor2To form a second LC resonance and adjust a second inductance L2Such that the second LC resonance is at a frequency of 2f, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
2. The output method of the high-output-power millimeter wave frequency doubler according to claim 1, wherein the step S2 is implemented as the following steps:
step S2.1: the first transistor comprises a capacitor CBC1Capacitor CBE1And a transistor Q1, a capacitor CBC1A capacitor C connected between the base and collector of the transistor Q1BE1A capacitor C connected between the base and emitter of the transistor Q1BC1Generating a current I1；
Step S2.2: the second transistor comprises a capacitor CBC2Capacitor CBE2And a transistor Q2, a capacitor CBC2A capacitor C connected between the base and collector of the transistor Q2BE2A capacitor C connected between the base and emitter of the transistor Q2BC2Generating a current I2；
Step S2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2。
3. The output method of the high-output-power millimeter wave frequency doubler according to claim 2, wherein the step S3 is implemented as the following steps:
step S3.1: first inductance L1Connected in parallel to a capacitor CBC1And the first inductance L1According to the inductance of the capacitor CBC1Such that the first LC resonance is at a frequency of 2 f;
step S3.2: second inductance L2Connected in parallel to a capacitor CBC2And the second inductance L2According to the inductance of the capacitor CBC2Such that the second LC resonates at a frequency of 2 f;
step S3.3: the connection point A is in a high impedance state, so that the current I1And current I2Decrease;
step S3.4: second total output current signal IOUT2＝I2f1+I2f2。
4. The output method of the high-output-power millimeter wave frequency doubler according to claim 1, wherein the step S2 is further embodied as the following steps:
step T2.1: the first transistor comprises a capacitor CGD1Capacitor CGS1And field effect transistor Q1, capacitor CGD1A capacitor C connected between the gate and drain of the field effect transistor Q1GS1A capacitor C connected between the gate and source of the field effect transistor Q1GD1Generating a current I1；
Step T2.2: the second transistor comprises a capacitor CGD2Capacitor CGS2And field effect transistor Q2, capacitor CGD2A capacitor C connected between the gate and drain of the field effect transistor Q2GS2A capacitor C connected between the gate and source of the field effect transistor Q2GD2Generating a current I2；
Step T2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2。
5. The output method of the high-output-power millimeter wave frequency doubler according to claim 4, wherein the step S3 is further embodied as the following steps:
step T3.1: first inductance L1Connected in parallel to a capacitor CGD1And the first inductance L1According to the inductance of the capacitor CGD1Such that the first LC resonance is at a frequency of 2 f;
step T3.2: second inductance L2Connected in parallel to a capacitor CGD2And the second inductance L2According to the inductance of the capacitor CGD2Such that the second LC resonates at a frequency of 2 f;
step T3.3: the connection point A is in a high impedance state, so that the current I1And current I2Decrease;
step T3.4: second total output current signal IOUT2＝I2f1+I2f2。
6. A high-output power millimeter wave frequency doubler is characterized by comprising a first transistor, a second transistor and a first inductor L1A second inductor L2And an output matching circuit:
the input differential signal and fundamental wave signal IN1 with frequency f are input to the input end of the first transistor to form a frequency-doubled current signal I with frequency 2f2f1The input differential signal and fundamental wave signal IN2 with frequency f is input to the input end of the second transistor to form a frequency-doubled current signal I with frequency 2f2f2；
The first transistor outputs a double frequency current signal I at an output end2f1The second transistor outputs a frequency-doubled current signal I at the output terminal2f2And the output of the first transistor and the output of the second transistor are connected at a connection point a to form a first total output current signal IOUT1And the first total output current signal I isOUT1The signal is transmitted to an output matching circuit for output;
a first inductor L is connected between the input end and the output end of the first transistor1To form a first LC resonance and adjust a first inductance L1So that the first LC resonance is at 2f frequency, a second inductance L being connected between the input and output of the second transistor2To form a second LC resonance and adjust a second inductance L2Such that the second LC resonance is at a frequency of 2f, the output of the first transistor and the output of the second transistor being connected at a connection point a to form a second total output current signal IOUT2And the second total output current signal IOUT2And the signal is transmitted to an output matching circuit for output.
7. The high-output-power millimeter wave frequency doubler according to claim 6,
the first transistor comprises a capacitor CBC1Capacitor CBE1And a transistor Q1, a capacitor CBC1A capacitor C connected between the base and collector of the transistor Q1BE1A capacitor C connected between the base and emitter of the transistor Q1BC1Generating a current I1；
The second transistor comprises a capacitor CBC2Capacitor CBE2And a transistor Q2, electricityContainer CBC2A capacitor C connected between the base and collector of the transistor Q2BE2A capacitor C connected between the base and emitter of the transistor Q2BC2Generating a current I2；
Step S2.3: first total output current signal IOUT1＝I2f1+I2f2-I1-I2。
8. The high-output-power millimeter wave frequency doubler according to claim 7,
first inductance L1Connected in parallel to a capacitor CBC1And the first inductance L1According to the inductance of the capacitor CBC1Such that the first LC resonance is at a frequency of 2 f;
second inductance L2Connected in parallel to a capacitor CBC2And the second inductance L2According to the inductance of the capacitor CBC2Such that the second LC resonates at a frequency of 2 f;
the connection point A is in a high impedance state, so that the current I1And current I2Decrease;
second total output current signal IOUT2＝I2f1+I2f2。
9. The high-output-power millimeter wave frequency doubler according to claim 6,
the first transistor comprises a capacitor CGD1Capacitor CGS1And field effect transistor Q1, capacitor CGD1A capacitor C connected between the gate and drain of the field effect transistor Q1GS1A capacitor C connected between the gate and source of the field effect transistor Q1GD1Generating a current I1；
The second transistor comprises a capacitor CGD2Capacitor CGS2And field effect transistor Q2, capacitor CGD2A capacitor C connected between the gate and drain of the field effect transistor Q2GS2A capacitor C connected between the gate and source of the field effect transistor Q2GD2Generating a current I2；
First total output current signal IOUT1＝I2f1+I2f2-I1-I2。
10. The high-output-power millimeter wave frequency doubler according to claim 9,
first inductance L1Connected in parallel to a capacitor CGD1And the first inductance L1According to the inductance of the capacitor CGD1Such that the first LC resonance is at a frequency of 2 f;
second inductance L2Connected in parallel to a capacitor CGD2And the second inductance L2According to the inductance of the capacitor CGD2Such that the second LC resonates at a frequency of 2 f;
the connection point A is in a high impedance state, so that the current I1And current I2Decrease;
second total output current signal IOUT2＝I2f1+I2f2。
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CN111010090A (en) * 2019-12-27 2020-04-14 中电国基南方集团有限公司 Broadband active frequency doubler

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