CN105680822B - A kind of high q-factor, inductance value and the tunable active inductance of operating frequency range - Google Patents
A kind of high q-factor, inductance value and the tunable active inductance of operating frequency range Download PDFInfo
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- CN105680822B CN105680822B CN201610007381.5A CN201610007381A CN105680822B CN 105680822 B CN105680822 B CN 105680822B CN 201610007381 A CN201610007381 A CN 201610007381A CN 105680822 B CN105680822 B CN 105680822B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/0422—Frequency selective two-port networks using transconductance amplifiers, e.g. gmC filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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Abstract
A kind of high q-factor, inductance value and the tunable active inductance of operating frequency range, which includes variable capacitance, active feedback resistance, positive trsanscondutance amplifier, negative transconductance amplifier, the first adjustable current source, the second adjustable current source, capacitance.Wherein negative transconductance amplifier is that multiple voltage modulation circuit is added in common source common gate configuration；Adjustable active feedback resistance is connected between positive negative transconductance amplifier, and the real part for improving active inductance is lost, and then further improves Q values；Variable capacitance is connected to the input terminal of positive trsanscondutance amplifier and the output end of negative transconductance amplifier, the load capacitance for adjusting active inductance, and then extends the adjustable range of inductance value and Q values.Two adjustable current sources are respectively that positive trsanscondutance amplifier and negative transconductance amplifier provide direct current biasing, and can adjust the operating frequency range of active inductance.These component parts make the working frequency, inductance value and Q values of the active inductance that can be adjusted.
Description
Technical field
The present invention relates to radio-frequency devices and integrated circuit fields, especially a kind of high q-factor, inductance value and operating frequency range
Tunable active inductance.
Background technology
In RF IC (RFICs), inductance is one of common element.For example, in low-noise amplifier, make
The matching that input and output may be implemented with inductance improves the gain flatness of amplifier；In voltage control (current control) oscillation
In device, the generation of signal may be implemented using inductance；In frequency mixer, the modulation of signal may be implemented using inductance.
Usually using on-chip spiral inductor in RFICs.Since the inductance value of on-chip spiral inductor and its geometric dimension are close
Cut phase is closed, and when inductance value is bigger, the chip area occupied is bigger, in practical applications, has tended to take up most of chip area,
Chip cost is increased, chip integration is limited.And when there are when multiple inductance, will produce between different induction mutually on chip
Feel effect, seriously affects the overall performance of RFIC.For on-chip spiral inductor there is also Q value is low, inductance value can not
The shortcomings of tune.In order to solve the problems, such as that on-chip spiral inductor exists, the active inductance synthesized using active devices such as transistors is answered
It transports and gives birth to.
It is compared to on-chip spiral inductor, active inductance has chip occupying area smaller, and inductance value and Q values are adjustable, system
Make the advantages that cost is relatively low.Active inductance other than it can replace passive inductance use, can also utilize its adjustability, compensation because
The adverse effect that the factors such as process deviation, ghost effect generate RFIC performances；RFIC parameters can be reconfigured, realize performance
Adjusting.Therefore, active inductance has higher practical value in practical applications.
The capacitance revolution of gyrator itself is equivalent inductance by existing active inductance generally use gyrator structures,
In negative transconductance amplifier often use one-stage amplifier structure, using the active inductance of this structure, that there is inductance values is adjustable
The shortcomings of range is small, Q values are low, inductance operating frequency range can not change, limits their applications in high-frequency RF ICs.
Invention content
The present invention provides a kind of high q-factor, inductance value and the tunable active inductance of operating frequency range.Active electrical of the present invention
Negative transconductance amplifier in sense increases multiple voltage modulation circuit, not only on the common gate pipe of common source-common gate configuration
The output impedance of negative transconductance amplifier is increased, and is reduced due to loss caused by equivalent series resistance, is improved active
The Q values of inductance；Further, the Q values of active inductance can be improved as backfeed loop using active adjustable resistance；In addition, passing through
Using preposition variable capacitance, realizes the adjusting to load capacitance, increase the inductance value of active inductance and the adjustable model of Q values
It encloses；Meanwhile by adjusting the resistance value of active feedback resistance and adjusting the control of the multiple voltage modulation circuit of negative transconductance amplifier
Voltage can realize the adjusting to the inductance value and Q values of active inductance；By adjusting the bias current of positive and negative trsanscondutance amplifier,
The quiescent point of positive negative transconductance amplifier can be changed, the adjusting to operating frequency range is realized, to make active inductance exist
There is wide inductance value adjustable range in different operating frequency range, while also there is high q-factor, wide tuning range, Gao Xing can be met
Needs of the energy RFICs designs to inductance.
The present invention adopts the following technical scheme that：
A kind of high q-factor, inductance value and the tunable active inductance of operating frequency range, as shown in Figure 1, the active inductance packet
Include variable capacitance, active feedback resistance, positive trsanscondutance amplifier, negative transconductance amplifier, the first adjustable current source, the second adjustable current
Source, capacitance.
The output end of the negative transconductance amplifier is connect with the input terminal of positive trsanscondutance amplifier by active feedback resistance；Institute
The input terminal of the output end and negative transconductance amplifier of stating positive trsanscondutance amplifier connects；Positive trsanscondutance amplifier and negative transconductance amplifier phase
Mutual interconnection constitutes gyrator, and gyrator turns round input capacitance of the positive trsanscondutance amplifier including variable capacitance at equivalent
Inductance.
First adjustable current source is connect with negative transconductance amplifier, and bias current is provided for negative transconductance amplifier；The
Two adjustable current sources are connect with positive trsanscondutance amplifier, and bias current is provided for positive trsanscondutance amplifier.Two adjustable current sources are adjusted,
The size that the bias current of positive negative transconductance amplifier can be changed makes to adjust the quiescent point of positive negative transconductance amplifier
The operating frequency range for obtaining active inductance changes, and then realizes the adjusting for active inductance operating frequency range.
The first end of the capacitance is the input terminal of active inductance, and second end connects the output end of positive trsanscondutance amplifier
With the input terminal of negative transconductance amplifier.The capacitance can filter out in trsanscondutance amplifier because the signal that direct current biasing generates is done
It disturbs.
The active feedback resistance is connected between the input terminal of positive trsanscondutance amplifier and the output end of negative transconductance amplifier.
The addition of active feedback resistance increases the output impedance of active inductance, real part loss is reduced, to increase active inductance
Q values, meanwhile, adjust active feedback resistance size, can also realize the adjusting to inductance value and Q values.
The variable capacitance is made of a NMOS transistor, and the source electrode and drain electrode of variable capacitance is connected；Grid is variable
One end of capacitance, grid are connected to the input terminal of positive trsanscondutance amplifier and the output end of negative transconductance amplifier；Underlayer electrode
For the other end of variable capacitance, underlayer electrode is connect with ground terminal.By adjusting the voltage of the source electrode and drain electrode of variable capacitance, grid
Capacitance size relative to ground terminal will change, and the adjusting to active inductive load capacitance is realized with this, to realize to having
The adjusting of the inductance value and Q values of source inductance.
The positive trsanscondutance amplifier is made of with negative transconductance amplifier NMOS transistor.Positive trsanscondutance amplifier uses single-stage
Amplifier architecture is an important composition part of gyrator.It is in common source-common gate configuration to negative transconductance amplifier
On common gate pipe, the composite construction of multiple voltage modulated structure is added, is another important composition part of gyrator.
Compared with prior art, the present invention has the following advantages：
Negative transconductance amplifier in active inductance of the present invention increases on the common gate pipe of common source-common gate configuration
Multiple voltage modulation circuit, not only increases the output impedance of negative transconductance amplifier, and reduces due to equivalent series resistance
Caused by be lost, improve the Q values of active inductance；Further, active adjustable resistance is used as backfeed loop, is improved
The Q values of active inductance；In addition, using preposition variable capacitance, the adjusting to load capacitance is realized, active inductance is increased
Inductance value and Q values adjustable extent；Meanwhile resistance value and adjusting negative transconductance amplifier by adjusting active feedback resistance are more
The control voltage of weight voltage modulation circuit, may be implemented the adjusting to the inductance value and Q values of active inductance；By adjust it is positive and negative across
Lead the bias current of amplifier, thus it is possible to vary the quiescent point of positive negative transconductance amplifier realizes the tune to operating frequency range
Section to make active inductance have wide inductance value adjustable range in different operating frequency range, while having high q-factor, can expire
Foot breadth adjustable range, high-performance RFICs design the needs to inductance.
Description of the drawings
Fig. 1 is the structure diagram of active inductance of the present invention；
Fig. 2 is the embodiment circuit topology schematic diagram of active inductance of the present invention；
Fig. 3 is the relationship of active inductance embodiment inductance value and working frequency under various combination bias condition of the present invention
Figure；
Fig. 4 is the relational graph of active inductance embodiment Q values and working frequency under various combination bias condition of the present invention；
Fig. 5 is another embodiment of the negative transconductance amplifier of active inductance of the present invention.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with the accompanying drawings, the present invention is made
It is further described.
Fig. 2 is high q-factor, one embodiment of inductance value and the tunable active inductance of operating frequency range.Including variable
Capacitance, active feedback resistance, positive trsanscondutance amplifier, negative transconductance amplifier, the first adjustable current source, the second adjustable current source, every
Straight capacitance.
Variable capacitance is made of the 9th MOS transistor (M9), and source electrode is connected with drain electrode, and grid is one end of capacitance,
Underlayer electrode is the other end of capacitance, is connect with ground terminal, adjusts the voltage of the source electrode and drain electrode of the 9th MOS transistor (M9) and will change
Become the channel thickness of the 9th MOS transistor (M9) so that channel capacitance changes, to change the load electricity of active inductance
Hold, to realize that the inductance value for adjusting active inductance and Q values provide first necessary condition.
Active feedback resistance is constituted by the 7th MOS transistor (M7) is in parallel with resistance (R1), is connected to positive negative transconductance amplification
Between device.7th MOS transistor (M7) is operated in linear zone, adjusts the grid voltage of the 7th MOS transistor (M7) and can realize it
The variation of resistance value.The addition of active feedback resistance increases the output impedance of active inductance, improves real part loss, improves
The Q values of active inductance；Resistance value by adjusting active feedback resistance can adjust the output impedance of active inductance, and then change
The inductance value of active inductance and Q values, to realize that the inductance value for adjusting active inductance and Q values provide second necessary condition.
Negative transconductance amplifier is by third MOS transistor (M3), the 4th MOS transistor (M4), the 5th MOS transistor and the 6th
MOS transistor (M6) is constituted.Third MOS transistor (M3) constitutes common source-common gate configuration with the 6th MOS transistor (M6),
4th MOS transistor (M4) constitutes multiple voltage modulation circuit with the 5th MOS transistor, with third MOS transistor (M3), the 6th
Common source-common gate configuration that MOS transistor (M6) is constituted together forms composite construction.Modulated negative transconductance amplifier
Using, not only increase the output impedance of active inductance, and reduce due to caused by equivalent series resistance loss, improve
The Q values of active inductance；Simultaneously as the addition of multiple voltage modulated structure, enhances the adjustability of active inductance, adjusted to realize
The inductance value and Q values for saving active inductance provide third necessary condition.
Positive trsanscondutance amplifier is made of the 8th MOS transistor (M8), is single-stage commonsource amplifier.Positive trsanscondutance amplifier with
Negative transconductance amplifier, which intersects, has connected and composed gyrator structures, is equivalent electricity by the input capacitance revolution of positive trsanscondutance amplifier
Sense.
First adjustable current source is made of the first MOS transistor (M1) and the second MOS transistor (M2), is amplified for negative transconductance
Device provides direct current biasing.Second adjustable current source is made of the tenth MOS transistor (M10), and direct current is provided for positive trsanscondutance amplifier
Biasing.Two adjustable current sources are adjusted, the size of the bias current of positive negative transconductance amplifier will be changed, to adjust positive negative transconductance
The quiescent point of amplifier so that the operating frequency range of active inductance changes, and realizes and works for active inductance
The adjusting of frequency range.
Capacitance is made of capacitance (C1), for filtering out the signal interference generated by direct current biasing in trsanscondutance amplifier.
The specific implementation mode of circuit is in the embodiment：
The drain electrode of first MOS transistor (M1) is connected with VDD, and source electrode is connected with the drain electrode of the 4th MOS transistor (M4), grid
Pole connects the first variable voltage source Vtune1；The drain electrode of second MOS transistor (M2) is connected with VDD, source electrode and third MOS transistor
(M3) drain electrode is connected, and grid connects the second variable voltage source Vtune2.The source electrode of 4th MOS transistor (M4) and the 5th MOS are brilliant
The drain electrode of body pipe (M5) is connected, and grid connects third variable voltage source Vtune3；The source electrode connection ground of 5th MOS transistor (M5)
End, grid connect the drain electrode of the 6th MOS transistor (M6), the grid and the 4th MOS (M4) transistor of the 3rd MOS (M3) transistor
Drain electrode be connected, source electrode is connected with the drain electrode of the grid and the 6th MOS transistor (M6) of the 5th MOS (M5) transistor, the 6th MOS
The grid of transistor (M6) connects the drain electrode of the source electrode and the tenth MOS transistor (M10) of the 8th MOS transistor (M8), and drain electrode connects
Ground terminal.The grid of 9th MOS transistor (M9) is connected with the drain electrode of third MOS transistor (M3), the 9th MOS transistor (M9)
Source electrode and drain electrode be connected and connect variable voltage source Vtune5.The source electrode and drain electrode of 7th MOS transistor (M7) is separately connected
The first end and second end of one resistance (R1), grid connect the 4th variable voltage source Vtune4.The drain electrode of 8th MOS transistor (M8)
Connect VDD, source electrode is connected with the grid of the drain electrode of the tenth MOS transistor (M10) and the 6th MOS transistor (M6), grid with have
Source feedback resistance is connected.The first end of first capacitance (C1) is RF input terminals, and second end connects the source of the 8th MOS transistor (M8)
Pole, the 6th MOS transistor (M6) grid and the tenth MOS transistor drain electrode.The source electrode of tenth MOS transistor (M10) connects
Ground terminal, grid connect the 6th variable voltage source Vtune6。
First MOS transistor (M1) is PMOS tube with the second MOS transistor (M2)；The third MOS transistor
(M3), the 4th MOS transistor (M4), the 5th MOS transistor (M5), the 6th MOS transistor (M6), the 7th MOS transistor (M7),
8th MOS transistor (M8), the 9th MOS transistor (M9), the tenth MOS transistor (M10) are NMOS tube.
Fig. 3 and Fig. 4 is active inductance of the present invention respectively, at various combination bias condition (Vbias1, Vbias2, Vbias3)
Under, the relational graph of inductance value and Q values and working frequency.Wherein, combined bias condition Vbias1 is：Vtune1=1.05V, Vtune2
=1.65V, Vtune3=1.64V, Vtune4=2.44V, Vtune5=2.7V, Vtune6=1.15V；Combined bias condition Vbias2 is：
Vtune1=1.65V, Vtune2=1.49V, Vtune3=0.57V, Vtune4=2.48V, Vtune5=1.8V, Vtune6=0.79V；Combination
Bias condition Vbias3 is：Vtune1=1.52V, Vtune2=1.62V, Vtune3=1.08V, Vtune4=2.47V, Vtune5=
1.75V、Vtune6=0.78V, supply voltage VDD are 3V and remain unchanged.It can be seen from the figure that in combined bias condition
Under Vbias1, active inductance of the present invention is in perception in 0.1GHz-6.2GHz frequency bands, and inductance value is in 0.1GHz-5.1GHz frequency bands
Interior variation range is 10.7nH-30.6nH, meanwhile, Q values are all higher than 20 in 2GHz-3.3GHz frequency bands, are up to 2707, and
In the frequency range, the variation range of inductance value is 13.9nH-21.7nH.At combined bias condition Vbias2, active electrical of the present invention
In perception in 0.1GHz-8.3GHz frequency bands, inductance value variation range in 0.1GHz-7.4GHz frequency bands is 7.2nH- for sense
22.4nH, meanwhile, Q values are all higher than 20 in 3GHz-4.7GHz frequency bands, are up to 4139, and in the frequency range, the change of inductance value
Change ranging from 9.9nH-15.7nH.At combined bias condition Vbias3, active inductance of the present invention is in 0.1GHz-11.6GHz frequencies
Band is interior in perception, and inductance value variation range in 0.1GHz-11.3GHz frequency bands is 4.8nH-19.1nH, meanwhile, in 4.7GHz-
Q values are all higher than 20 in 8GHz frequency bands, are up to 4614, and in the frequency range, and the variation range of inductance value is 6.2nH-11.1nH.
In short, active inductance of the present invention is respectively 0.1-11.6GHz and 0.1- in maximum, the minimum frequency of operation range of perception
6.2GHz；Wherein, in 0.1-11.3GHz frequency ranges, inductance value can be adjusted between 4.8nH to 30.6nH；
Between 2GHz-8GHz frequency ranges, Q values can be adjusted, and can be more than 20, and maximum value is up to 4614.The above results show that
The working frequency of the active inductance, inductance value and Q values can be biased in different external voltages or combined bias under be adjusted,
Different inductance values and Q values are obtained, and there is high Q values and wide inductance value tuning range, while inductance can be also operated in not
In same frequency range.
Another embodiment circuit diagram of the negative transconductance amplifier provided by the invention is as shown in Figure 5.First MOS crystal
Pipe (M1) is connected with third MOS transistor (M3) constitutes common source-common gate configuration, and the second MOS transistor (M2) is used as voltage
The drain electrode of modulating tube, the second MOS transistor (M2) is connected with the grid of the first MOS transistor (M1), grid and the first MOS crystal
The source electrode of pipe (M1) is connected with the drain electrode of third MOS transistor (M3), and source electrode connects ground terminal, constitutes voltage modulated structure.The
One MOS transistor (M1) connect the first adjustable current source, the first MOS transistor (M1) with the drain electrode of the second MOS transistor (M2)
Drain electrode connect active feedback resistance, the grid of third MOS transistor (M3) connects the input terminal of positive trsanscondutance amplifier.This implementation
The first MOS transistor (M1), the second MOS transistor (M2), third MOS transistor (M3) are NMOS tube described in example.
Fig. 2 is compared with embodiment shown in fig. 5, and negative transconductance amplifier is as a result of more in embodiment shown in Fig. 2
Weight voltage modulated structure, thus transconductance value, the output impedance of bigger and smaller equivalent series resistance with bigger, make to have
Source inductance has higher inductance value and Q values；Simultaneously as the voltage tune that the transconductance value of negative transconductance amplifier is connect with common gate
The grid voltage of tubulation is directly related, therefore increases the adjustability of active inductance.Negative transconductance amplifier embodiment shown in fig. 5
Larger equivalent inductance value can be provided, but Q values can be made to decline, and its adjustability is declined.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (1)
1. a kind of high q-factor, inductance value and the tunable active inductance of operating frequency range, it is characterised in that：The active inductance packet
Include variable capacitance, active feedback resistance, positive trsanscondutance amplifier, negative transconductance amplifier, the first adjustable current source, the second adjustable current
Source, capacitance；
Wherein, negative transconductance amplifier by third NMOS transistor (M3), the 4th NMOS transistor (M4), the 5th NMOS transistor and
6th MOS transistor (M6) is constituted；Third NMOS transistor (M3) constitutes common source-common gate with the 6th NMOS transistor (M6)
Structure, the 4th NNMOS transistors (M4) constitute multiple voltage modulation circuit with the 5th NMOS transistor, with third NMOS transistor
(M3), common source-common gate configuration that the 6th NMOS transistor (M6) is constituted together forms composite construction, has not only increased
The output impedance of source inductance, and reduce due to loss caused by equivalent series resistance, improve the Q values of active inductance；Together
When, the introducing of multiple voltage modulation circuit also enhances the adjustability of active inductance；Positive trsanscondutance amplifier is by the 8th NMOS crystal
It manages (M8) to constitute, is single-stage commonsource amplifier；Positive trsanscondutance amplifier intersects with negative transconductance amplifier have been connected and composed time
Turn device structure, input capacitance of the positive trsanscondutance amplifier including variable capacitance is turned round into equivalent inductance；Variable capacitance is by
Nine NMOS transistors (M9) are constituted, and source electrode is connected with drain electrode, and grid is the first end of variable capacitance, is connected to positive mutual conductance and puts
The big input terminal of device and the output end of negative transconductance amplifier, underlayer electrode are the second end of variable capacitance, are connect with ground terminal, a side
Face a, part of the variable capacitance as revolution capacitance, enhances the turnability of circuit, on the other hand, by adjusting the 9th
The voltage V of the source electrode and drain electrode of NMOS transistor (M9)tune5, the channel thickness of the 9th NMOS transistor (M9) will be changed so that
Channel capacitance changes, to realize the adjusting to the inductance value and Q values of active inductance；Active feedback resistance is by the 7th NMOS
Transistor (M7) is in parallel with resistance (R1) to be constituted, and the input terminal of positive trsanscondutance amplifier and the output end of negative transconductance amplifier are connected to
Between, the output impedance of active inductance is increased, real part loss is improved, improves the Q values of active inductance；It is active by adjusting
The resistance value of feedback resistance can realize the adjusting to the inductance value and Q values of active inductance；First adjustable current source is by the first PMOS
Transistor (M1) and the second PMOS transistor (M2) are constituted, and direct current biasing is provided for negative transconductance amplifier；Second adjustable current source
It is made of the tenth NMOS transistor (M10), direct current biasing is provided for positive trsanscondutance amplifier；First adjustable current source can be independently to negative
Trsanscondutance amplifier is adjusted；Two adjustable current sources are adjusted simultaneously, will change the big of the bias current of positive negative transconductance amplifier
It is small, to adjust the quiescent point of positive negative transconductance amplifier so that the operating frequency range of active inductance changes, and realizes
Adjusting for active inductance operating frequency range；Capacitance is made of capacitance (C1)；
Wherein：The source electrode of first PMOS transistor (M1) is connected with VDD, the drain electrode phase to drain with the 4th NMOS transistor (M4)
Even, grid connects the first variable voltage source Vtune1；The source electrode of second PMOS transistor (M2) is connected with VDD, drain electrode and third
The drain electrode of NMOS transistor (M3) is connected, and grid connects the second variable voltage source Vtune2；The source electrode of 4th NMOS transistor (M4)
It is connected with the drain electrode of the 5th NMOS transistor (M5), grid connects third variable voltage source Vtune3；5th NMOS transistor (M5)
Source electrode connect ground terminal, grid connects the drain electrode of the 6th NMOS transistor (M6), the grid of the 3rd NMOS (M3) transistor and the
The drain electrode of four NMOS (M4) transistor is connected, the grid and the 6th NMOS transistor (M6) of source electrode and the 5th NMOS (M5) transistor
Drain electrode be connected, the grid of the 6th NMOS transistor (M6) connects the source electrode and the tenth NMOS crystal of the 8th NMOS transistor (M8)
The drain electrode of (M10) is managed, source electrode connects ground terminal；The drain electrode of the grid and third NMOS transistor (M3) of 9th NMOS transistor (M9)
It is connected with one end of active feedback resistance, the source electrode and drain electrode of the 9th NMOS transistor (M9) is connected and connects variable voltage source
Vtune5；The source electrode and drain electrode of 7th NMOS transistor (M7) is separately connected the first end and second end of resistance (R1), grid connection
4th variable voltage source Vtune4；The drain electrode of 8th NMOS transistor (M8) connects VDD, one end phase of grid and active feedback resistance
Even；The first end of capacitance (C1) is RF input terminals, and second end connects source electrode, the 6th NMOS of the 8th NMOS transistor (M8)
The drain electrode of the grid and the tenth NMOS transistor of transistor (M6)；The source electrode of tenth NMOS transistor (M10) connects ground terminal, grid
Pole connects the 6th variable voltage source Vtune6。
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| CN108318783B (en) * | 2018-02-06 | 2023-11-28 | 国网四川省电力公司电力科学研究院 | Current transformer traveling wave transformation model and construction method thereof |
| CN108768341B (en) * | 2018-03-23 | 2021-09-14 | 湖南师范大学 | Miniature power divider based on high-Q-value tunable active inductor |
| CN108768342B (en) * | 2018-05-31 | 2021-09-03 | 北京工业大学 | Radio frequency integrated active inductor |
| CN108964620B (en) * | 2018-07-05 | 2022-01-28 | 湖南师范大学 | Active inductor based on folding Cascode structure |
| CN109714810B (en) * | 2018-10-29 | 2022-03-22 | Oppo（重庆）智能科技有限公司 | Mobile terminal power consumption control method and related product |
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2016
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| CN102332912A (en) * | 2011-09-30 | 2012-01-25 | 中国科学技术大学 | Voltage controlled oscillator (VCO) capable of adjusting linearity of gain and two-point modulator based on VCO |
| CN104898761A (en) * | 2015-06-25 | 2015-09-09 | 北京工业大学 | Transistor synthesized inductor |
| CN104980125A (en) * | 2015-07-07 | 2015-10-14 | 北京工业大学 | Broadband, high Q-factor and tunable active inductor of negative resistance structure |
| CN105071784A (en) * | 2015-07-19 | 2015-11-18 | 北京工业大学 | Broadband active inductor with high Q value |
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| 兼有高Q值、高电感值、高线性度的新型全差分有源电感;邓蔷薇 等;《电子器件》;20150630;第38卷(第3期);全文 * |
| 基于有源电阻反馈和分流支路的新型有源电感;高栋 等;《微电子学》;20131231;第43卷(第6期);全文 * |
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