CN112542416B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN112542416B
CN112542416B CN202010823737.9A CN202010823737A CN112542416B CN 112542416 B CN112542416 B CN 112542416B CN 202010823737 A CN202010823737 A CN 202010823737A CN 112542416 B CN112542416 B CN 112542416B
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China
Prior art keywords
substrate
processing unit
hand
unit
shelf
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Active
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CN202010823737.9A
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Chinese (zh)
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CN112542416A (en
Inventor
高山祐一
中泽和彦
蒲裕充
森冈利仁
佐藤卓也
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication of CN112542416A publication Critical patent/CN112542416A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

The invention aims to provide a substrate processing device capable of properly processing a substrate. The substrate processing apparatus (1) has a first processing unit (7A) and a second processing unit (7B). The first processing unit (7A) has a first substrate holding section (91A) and a first rotation driving section (92A). The first substrate holding section 91A has a first plate (101), a fixing pin (103), and a gas outlet (104). The second processing unit (7B) has a second plate (131) and an edge contact pin (133). The substrate processing apparatus (1) has a conveyance mechanism (8) and a control unit (9). The transport mechanism (8) transports the substrate (W) to the processing unit (7). A control unit (9) identifies a processing unit (7) that processes a substrate (W) as either a first processing unit (7A) or a second processing unit (7B) according to the shape of the substrate (W), and conveys the substrate (W) to the identified processing unit (7) by a conveyance mechanism (8).

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus for processing a substrate. Examples of the substrate include a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display) a substrate for a flat panel display, a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for an magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell.
Background
Japanese patent application laid-open No. 2007-149892 discloses a substrate processing apparatus. In the following, reference numerals described in Japanese patent application laid-open No. 2007-149892 are given by brackets. The substrate processing apparatus (100) has a substrate transfer robot (CR) and four cleaning processing units (5 a, 5b, 5c, 5 d). The substrate transfer robot (CR) transfers the substrate (W) to any one of the cleaning processing units (5 a, 5b, 5c, 5 d). The cleaning processing units (5 a, 5b, 5c, 5 d) perform cleaning processing on the substrates (W), respectively.
The cleaning sections (5 a, 5b, 5c, 5 d) each have a spin chuck (21).
The spin chuck (21) holds the back surface center of the substrate (W) by suction.
In recent years, a substrate has been thinned and made larger in diameter. If the thickness of the substrate is reduced and the diameter of the substrate is increased, the deflection of the substrate is significantly increased. Therefore, it is sometimes difficult to properly process the substrate in the processing section of the conventional substrate conveying apparatus.
Disclosure of Invention
The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus capable of appropriately processing a substrate.
In order to achieve the above object, the present invention has the following structure. Namely, the substrate processing apparatus of the present invention,
The device comprises:
a processing unit that processes a substrate;
a transport mechanism that transports a substrate to the processing unit; and
a control unit for controlling the transport mechanism,
the processing unit has a first processing unit and a second processing unit,
the first processing unit has:
a first substrate holding section for holding a substrate; and
a first rotation driving unit for rotating the first substrate holding unit,
the first substrate holding portion includes:
a first plate;
a support portion protruding upward from an upper surface of the first plate, contacting at least one of a lower surface of the substrate and an edge of the substrate, and supporting the substrate at a position higher than the upper surface of the first plate; and
a gas outlet formed in the upper surface of the first plate, for blowing gas between the upper surface of the first plate and the lower surface of the substrate supported by the support portion, and for sucking the substrate downward,
the second processing unit has:
a second substrate holding section for holding a substrate; and
a second rotation driving unit for rotating the second substrate holding unit,
the second substrate holding portion includes:
a second plate; and
An edge contact part mounted on the second plate and contacting with the edge of the substrate when the second substrate holding part is rotated by the second rotation driving part,
the control unit determines the processing unit that processes the substrate as one of the first processing unit and the second processing unit according to the shape of the substrate, and conveys the substrate to the determined processing unit by the conveying mechanism.
The substrate processing apparatus has a processing unit that processes a substrate. The processing unit has a first processing unit and a second processing unit.
The first processing unit has a first substrate holding section and a first rotation driving section. The first substrate holding portion has a first plate, a support portion, and a gas outlet. Thus, even with a relatively thin substrate, the first substrate holding portion can appropriately hold the substrate. Therefore, even a relatively thin substrate can be properly processed by the first processing unit.
The second processing unit has a second substrate holding section and a second rotation driving section. The second substrate holding portion has a second plate and an edge contact portion. Thus, even with a relatively thick substrate, the second substrate holding portion can appropriately hold the substrate. Therefore, even a relatively thick substrate, the second processing unit can appropriately process the substrate.
The substrate processing apparatus includes a conveyance mechanism and a control unit. The transport mechanism transports the substrate to the processing unit. The control unit controls the conveyance mechanism. The control unit determines a processing unit for processing the substrate as one of the first processing unit and the second processing unit according to the shape of the substrate. The control unit conveys the substrate to the specified processing unit by the conveying mechanism. Thus, the first processing unit and the second processing unit can appropriately process the substrate, respectively. In this way, the control unit switches between the first processing unit and the second processing unit according to the shape of the substrate. Therefore, the substrate processing apparatus can appropriately process the substrate regardless of the shape of the substrate.
As described above, according to the substrate processing apparatus of the present invention, the substrate can be appropriately processed.
In the above-described substrate processing apparatus, preferably,
the edge contact portion holds the substrate so that the substrate does not slide with respect to the edge contact portion when the second substrate holding portion is rotated by the second rotation driving portion.
The second substrate holding portion can appropriately hold the substrate even when the second substrate holding portion rotates. Thereby, the second processing unit can appropriately process the substrate.
In the above-described substrate processing apparatus, preferably,
the control unit determines the processing unit for processing the substrate as one of the first processing unit and the second processing unit based on a thickness of a main portion of the substrate located inside a peripheral portion of the substrate.
The substrate processing apparatus can appropriately process the substrate regardless of the thickness of the main portion of the substrate.
In the above-described substrate processing apparatus, preferably,
the control unit conveys a substrate having a first thickness in the main portion of the substrate to the first processing unit, and conveys a substrate having a second thickness larger than the first thickness in the main portion of the substrate to the second processing unit.
The substrate processing apparatus can appropriately process the substrate regardless of the thickness of the main portion of the substrate.
In the above-described substrate processing apparatus, preferably,
the substrate comprises:
a first substrate having a recess formed by recessing a main portion of the substrate located inside a peripheral portion of the substrate from the peripheral portion of the substrate, and having no glass protective plate; and
a second substrate having no recess,
the control section determines the processing unit that processes the first substrate as the first processing unit and causes the first substrate to be carried toward the first processing unit, and determines the processing unit that processes the second substrate as the second processing unit and causes the second substrate to be carried toward the second processing unit.
The substrate processing apparatus can appropriately process the first substrate and the second substrate.
In the above-described substrate processing apparatus, preferably,
the substrate comprises:
a first substrate having a recess formed by recessing a main portion of the substrate located inside a peripheral portion of the substrate from the peripheral portion of the substrate, and having no glass protective plate; and
a third substrate having the concave portion and having a protective plate made of glass,
the control section determines the processing unit that processes the first substrate as the first processing unit and causes the first substrate to be carried toward the first processing unit, and determines the processing unit that processes the third substrate as the second processing unit and causes the third substrate to be carried toward the second processing unit.
The substrate processing apparatus can appropriately process the first substrate and the third substrate.
Drawings
While certain presently preferred modes of carrying out the invention have been shown for purposes of illustration, it is to be understood that the invention is not limited to the precise construction and modes shown.
Fig. 1 is a plan view of a substrate processing apparatus according to an embodiment.
Fig. 2 is a control block diagram of the substrate processing apparatus.
Fig. 3 is a top view of a substrate.
Fig. 4A is a cross-sectional view of the first substrate, fig. 4B is a cross-sectional view of the second substrate, and fig. 4C is a cross-sectional view of the third substrate.
Fig. 5A is a plan view of a normal-diameter substrate, and fig. 5B is a plan view of a large-diameter substrate.
Fig. 6 is a front view of the receiving rack.
Fig. 7 is a top view of a shelf of the receiving rack.
Fig. 8 is a left side view showing a configuration of a central portion of the substrate processing apparatus in the width direction.
Fig. 9 is a top view of the hand.
Fig. 10 is a side view of a hand.
Fig. 11 is a left side view showing a structure of a left portion of the substrate processing apparatus.
Fig. 12 is a front view of the placement unit.
Fig. 13 is a plan view of the shelf of the mounting portion.
Fig. 14 is a diagram showing a detailed structure of the shelf of the placement unit.
Fig. 15 is a bottom view of the hand.
Fig. 16A and 16B are side views of the hands, respectively.
Fig. 17 is a plan view of the suction portion, the substrate sucked by the suction portion, and the receiving portion.
Fig. 18 is a top view of the receiving portion.
Fig. 19 is a diagram schematically showing the structure of the first processing unit.
Fig. 20 is a top view of the first plate.
Fig. 21A and 21B are plan views showing detailed structures of the position adjustment pins, respectively.
Fig. 22A and 22B are side views of the position adjustment pin, respectively.
Fig. 23A and 23B are side views of the lift pins, respectively.
Fig. 24 is a diagram schematically showing the structure of the second processing unit.
Fig. 25 is a top view of the second plate.
Fig. 26A and 26B are plan views showing detailed structures of the edge contact pins.
Fig. 27A, 27B are side views of the end edge contact pin.
Fig. 28 is a flowchart showing a procedure of the control unit to acquire the shape of the substrate.
Fig. 29 is a flowchart showing steps of control of the control unit and operation of the conveyance mechanism.
Fig. 30A to 30D are diagrams schematically showing an example of the operation of the conveyance mechanism to remove the substrate from the shelf of the storage rack.
Fig. 31A and 31B are diagrams showing a relationship between the insertion height of the hand and the substrate placed on the shelf.
Fig. 32A to 32D are diagrams schematically showing an example of an operation of the conveyance mechanism to remove the substrate from the shelf of the mounting portion.
Fig. 33 is a flowchart showing steps of control of the control unit and operation of the conveyance mechanism.
Fig. 34A to 34D are diagrams schematically showing an example of an operation of the conveyance mechanism to remove the substrate from the shelf of the mounting portion.
Fig. 35A to 35D are diagrams schematically showing an example of an operation of the conveyance mechanism to remove the substrate from the shelf of the mounting portion.
Fig. 36A to 36F are diagrams schematically showing an example of an operation of transferring a substrate by the transport mechanism to the substrate holding section of the processing unit.
Fig. 37A to 37F are diagrams schematically showing an example of the operation of the transport mechanism to remove the substrate from the substrate holding portion of the processing unit.
Fig. 38A to 38D are diagrams schematically showing an example of the operation of the conveyance mechanism for placing the substrate on the shelf of the placement unit.
Fig. 39A to 39D are diagrams schematically showing an example of the operation of the conveyance mechanism for placing the substrate on the shelf of the placement unit.
Fig. 40 is a flowchart showing steps of an operation example of the first processing unit.
Fig. 41 is a timing chart showing an example of the operation of the first processing unit.
Fig. 42 is a diagram schematically showing the structure of the first processing unit in the modified embodiment.
Fig. 43 is a diagram schematically showing the structure of the first processing unit in the modified embodiment.
Description of the reference numerals:
1. substrate processing apparatus
2. Indexer part
3. Accommodating rack mounting part
4. Transport mechanism (second transport mechanism)
5. Treatment zone
6. Mounting part (first position, second position)
7. Processing unit (first position, second position)
7A first processing Unit
7B second processing Unit
8. Transport mechanism (first transport mechanism)
9. Control unit
11. Substrate main body
12. Peripheral edge portion of substrate
13. Main part of substrate
14. Recess of substrate
15. Protective plate
16. The lower surface of the substrate
17. Upper surface of substrate
18. First side of the substrate
19. A second side of the substrate
20. Edge of substrate
22. Shelf board
23. First shelf board
24. Second shelf
31. Bar code reader
33. Hand portion
34. Hand driving part
35. Connecting part
36. Rod
37. Contact portion
38. Substrate detection unit
45. Shelf board
46. First shelf board
47. Second shelf
51. First inclined plane
Upper end of 51T first inclined surface
51B lower end of first inclined surface
Intermediate point of 51M first inclined plane
52. Upper inclined plane
53. Lower inclined plane
55. Second inclined plane
56. Upper inclined plane
57. Lower inclined plane
61. Hand portion
62. Hand driving part
64. Connecting part
65. Base portion
66. Branching portion
68. Suction part
69. Suction pad
71. Gas supply path
72. Gas supply source
73. Suction adjusting part
74. Contact portion
75. A first contact part
76. A second contact part
77. Wall portion
78. A first wall part
79. A second wall part
80. Third wall part
81. Receiving part
82. A first receiving part
83. A second receiving part
86. Receiving part driving part
87. Actuator
88. Elastic member
89. Substrate detection unit
91. Substrate holding portion
91A first substrate holding portion
91B second substrate holding portion
92. Rotation driving part
92A first rotation driving part
92B second rotation driving part
93. Baffle plate
101. First plate
102. Upper surface of
103. Fixed pin (supporting part)
104. Gas outlet
105. First air outlet
106. Second air outlet
107. First gas supply path
108. Second gas supply path
109. Gas supply source
111. First blowout control unit
112. Second blowout control unit
113. Position adjusting pin (position adjusting part)
114. Shaft portion
116. Lifting pin (lifting part)
121. Treatment liquid supply unit
122. Nozzle
123. Piping arrangement
124. Treatment liquid supply source
125. Flow rate adjusting part
127. Substrate detection unit
131. Second plate
132. Upper surface of
133. Terminal contact pin (terminal contact part)
134. Small piece part
135. Lower surface contact pin
136. Shaft portion
141. First processing unit
142. Pure water supply unit
143. Piping arrangement
144. Pure water supply source
145. Flow rate adjusting part
151. First processing unit
153. Piping arrangement
154. Treatment liquid supply source
155. Flow rate adjusting part
A1, A2, A3, A4, A5, A6 axes of rotation
C containing rack (first position, second position)
Diameter of D substrate
D1 Diameter of base plate of normal diameter
D2 Large-diameter substrate
E1 space between first shelf 23 and second shelf 24 arranged in horizontal direction
E2 is arranged in the horizontal direction at an interval between the first shelf 46 and the second shelf 47 (an interval between the first inclined surface and the second inclined surface in the horizontal direction)
Spacing between upper end of first inclined plane and upper end of second inclined plane in ET horizontal direction
Spacing between lower end of first inclined surface and lower end of second inclined surface in EB horizontal direction
Spacing between intermediate point of first inclined plane and intermediate point of second inclined plane in EM horizontal direction
F1 First direction
F2 Second direction
F3 Third direction of
F4 Fourth direction
HA. HB, HC height position
First height position of HA1, HB1 and HC1
HA2, HB2, HC2 second altitude position
HA3, HB3, HC3 third altitude position
Center of J substrate
KA. KB insertion amount
First insertion amount of KA1 and KB1
KA2 and KB2 second insertion amount
Length of the two bars in the second direction L1
Length of rod in L2 first direction
Length of one bar in the second direction L3
Thickness of main portion of T1, T2, T3 substrate
Thickness of peripheral edge of T4, T5, T6 substrate
VA, VB moving speed
VA1, VB1 first movement speed
VA2, VB2 second movement speed
AA. AB acceleration
AA1, AB1 first acceleration
AA2, AB2 second acceleration
M flow rate
M1 first flow rate
M2 second flow rate
M3 third flow rate
W substrate
W1 first substrate
W2 second substrate
W3 third substrate
WN normal diameter substrate
WD large-diameter substrate
Front-rear direction of X
Y width direction
Up and down direction of Z
Angle of inclined plane on θ1
Angle of θ2 lower inclined plane
Detailed Description
Next, a substrate processing apparatus according to the present invention will be described with reference to the drawings.
Summary of substrate processing apparatus
Fig. 1 is a plan view of a substrate processing apparatus according to an embodiment. The substrate processing apparatus 1 processes a substrate W.
The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for FPD (Flat Panel Displa), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for an magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell.
The substrate processing apparatus 1 includes an indexer block 2. The indexer block 2 has a plurality (for example, four) of housing rack mounting blocks 3. Each of the housing rack mounting portions 3 mounts one housing rack C. The accommodating frame C accommodates a plurality of substrates W. The accommodating rack C is, for example, a FOUP (front opening unified pod: front opening unified pod). The indexer block 2 has a carrying mechanism 4. The carrying mechanism 4 can access the storage racks C placed on all the storage rack placing units 3.
The substrate processing apparatus 1 has a processing region 5. The processing region 5 is connected to the indexer block 2.
The processing region 5 has a mounting portion 6. The mounting portion 6 mounts a plurality of substrates W. The treatment zone 5 has a plurality of treatment units 7. Each processing unit 7 processes one substrate W. The treatment zone 5 has a handling mechanism 8. The carrying mechanism 8 can access the mounting portion 6 and all the processing units 7. The conveying mechanism 8 conveys W to the mounting portion 6 and the processing unit 7.
The placement unit 6 is disposed between the conveying mechanism 4 and the conveying mechanism 8. The carrying mechanism 4 can also access the mounting portion 6. The transport mechanism 4 transports the substrate W to the mounting portion 6. The mounting portion 6 mounts the substrate W to be transported between the transport mechanism 4 and the transport mechanism 8.
The substrate processing apparatus 1 includes a control unit 9. The control unit 9 controls the conveyance mechanisms 4 and 8 and the processing unit 7.
Fig. 2 is a control block diagram of the substrate processing apparatus 1. The control unit 9 is communicably connected to the conveyance mechanisms 4, 8 and the processing unit 7.
The control unit 9 is implemented by a Central Processing Unit (CPU) that executes various processes, a RAM (Random-Access Memory) that is a work area for the arithmetic processes, a storage medium such as a fixed disk, and the like. The storage medium stores various information in advance. The storage medium stores information on the operating conditions of the conveyance mechanisms 4, 8 and the processing unit 7, for example. The information on the operation conditions of the processing unit 7 is, for example, a processing recipe (processing program) for processing the substrate W. The storage medium stores, for example, information for identifying each substrate W.
An operation example of the substrate processing apparatus 1 will be described. The transport mechanism 4 transports the substrate W from the housing rack C on the housing rack mounting section 3 to the mounting section 6. The transport mechanism 8 transports the substrate W from the mounting portion 6 to one of the processing units 7. The processing unit 7 processes the substrate W. The transport mechanism 8 transports the substrate W from the processing unit 7 to the mounting portion 6. The transport mechanism 4 transports the substrate W from the mounting portion 6 to the housing rack C on the housing rack mounting portion 3.
The conveyance mechanism 4 is an example of a second conveyance mechanism in the present invention. The conveyance mechanism 8 is an example of the first conveyance mechanism in the present invention. The placement unit 6 is an example of one of the first position and the second position in the present invention. The processing unit 7 is an example of the other of the first position and the second position in the present invention.
Reference is made to fig. 1. In this specification, for convenience of description, the direction in which the indexer block 2 and the process field 5 are arranged is referred to as "front-rear direction X". The front-rear direction X is horizontal. The direction from the processing region 5 toward the indexer block 2 in the front-rear direction X is referred to as "front". The direction opposite to the front is referred to as "rear". The horizontal direction orthogonal to the front-rear direction X is referred to as "width direction Y" or "side direction". One direction of the "width direction Y" is appropriately referred to as "right". The direction opposite to the right direction is referred to as "left direction". The vertical direction is referred to as "up-down direction Z". The up-down direction Z is orthogonal to the front-back direction X and is orthogonal to the width direction Y. In each figure, for reference, front, rear, right, left, upper, lower are appropriately shown.
< shape of substrate W >)
Fig. 3 is a plan view of the substrate W. The basic shape of the substrate W will be described. The substrate W has a thin flat plate shape. The substrate W has a substantially circular shape in a plan view. The substrate W has a peripheral portion 12 and a main portion 13. The main portion 13 is a portion of the substrate W located inside the peripheral portion 12. The semiconductor device is formed in the main portion 13. For convenience of explanation, the boundary between the peripheral edge portion 12 and the main portion 13 is shown by a broken line in fig. 3.
In the present specification, the substrate W is divided into a plurality of types according to the shape of the substrate W. First, the substrate W is divided into a first substrate W1, a second substrate W2, and a third substrate W3 according to the thickness of the main portion 13 of the substrate W.
Fig. 4A is a cross-sectional view of the first substrate W1. Fig. 4B is a cross-sectional view of the second substrate W2. Fig. 4C is a cross-sectional view of the third substrate W3. The first substrate W1 is a substrate W including a recess 14 formed by recessing the main portion 13 from the peripheral portion 12, and excluding the glass protective plate 15. The recess 14 is formed by, for example, grinding (polishing). The second substrate W2 is a substrate W that does not include the recess 14. The third substrate W3 is a substrate W including the concave portion 14 and including the glass protection plate 15. The first substrate W1 may be constituted only by the substrate main body 11. Alternatively, the first substrate W1 may include at least one of a resin coating film, a resin tape, a resin sheet, and a resin film, in addition to the substrate body 11. The second substrate W2 may be constituted only by the substrate body 11. Alternatively, the second substrate W2 may include at least one of a resin coating film, a resin tape, a resin sheet, a resin film, and a protective plate 15 in addition to the substrate body 11. The third substrate W3 includes a substrate main body 11 and a protection plate 15. The protective plate 15 is attached to the substrate main body 11, for example. The third substrate W3 may further include at least one of a resin coating film, a resin tape, a resin sheet, and a resin film.
The main portion 13 of the first substrate W1 is thinner than the main portion 13 of the second substrate W2. The main portion 13 of the first substrate W1 is thinner than the main portion 13 of the third substrate W3. The first substrate W1 has a lower rigidity than the second substrate W2 and the third substrate W3. The first substrate W1 is more easily deflected than the second substrate W2 and the third substrate W3.
Specifically, the main portion 13 of the first substrate W1 has a thickness T1. The main portion 13 of the second substrate W2 has a thickness T2. The main portion 13 of the third substrate W3 has a thickness T3. Thickness T1 is smaller than thickness T2. Thickness T1 is less than thickness T3. The thickness T1 is, for example, 10[ mu ] m or more and 200[ mu ] m or less. The thickness T2 is, for example, 600[ mu ] m or more and 1000[ mu ] m or less. The thickness T3 is, for example, 800[ mu ] m or more and 1200[ mu ] m or less.
The peripheral edge portion 12 of the first substrate W1 has a thickness T4. The peripheral edge portion 12 of the second substrate W2 has a thickness T5. The peripheral edge portion 12 of the third substrate W3 has a thickness T6. The thickness T4 is, for example, the same as the thickness T5. Thickness T4 is smaller than thickness T6. The thickness T4 is, for example, 600[ mu ] m or more and 1000[ mu ] m or less. The thickness T5 is, for example, 600[ mu ] m or more and 1000[ mu ] m or less. The thickness T6 is, for example, 1400[ mu ] m or more and 2200[ mu ] m or less.
Second, the substrate W is divided into a normal-diameter substrate WN and a large-diameter substrate WL according to the diameter D of the substrate W.
Fig. 5A is a plan view of the normal diameter substrate WN. Fig. 5B is a plan view of the large-diameter substrate WL. The normal diameter substrate WN has a diameter D1. The large diameter substrate WL has a diameter D2. Diameter D2 is greater than diameter D1.
The diameter D1 is, for example, 300[ mm ]. The diameter D2 is, for example, 301[ mm ].
For example, the first substrate W1 and the second substrate W2 are normal diameter substrates WN. For example, the third substrate W3 is a large-diameter substrate WL.
The substrate processing apparatus 1 processes a first substrate W1, a second substrate W2, and a third substrate W3. The substrate processing apparatus 1 processes a normal-diameter substrate WN and a large-diameter substrate WL.
< containing frame C >)
Fig. 6 is a front view of the accommodating shelf C. The accommodating shelf C has a container 21 and a plurality of shelves 22. The shelf 22 is provided inside the container 21. The shelves 22 are arranged in the up-down direction Z. Two shelves 22 adjacent in the up-down direction Z approach each other. The interval between two adjacent shelves 22 in the up-down direction Z is, for example, 10 mm.
Each of the shelves 22 carries a single substrate W in a horizontal posture. The shelf 22 is in contact with the lower surface 16 of the substrate W. For example, the shelf 22 is in contact with the lower surface 16 in the peripheral edge portion 12 of the substrate W. The shelf 22 is not in contact with the upper surface 17 of the substrate W. Thereby, the shelf 22 supports the substrate W. When the shelf 22 supports the substrate W, the shelf 22 allows the substrate W to move upward with respect to the shelf 22.
Each shelf 22 has a first shelf 23 and a second shelf 24, respectively. The first shelf 23 and the second shelf 24 are separated from each other. The first shelf 23 and the second shelf 24 are opposed in the horizontal direction. The interval E1 between the first shelf 23 and the second shelf 24 arranged in the horizontal direction is smaller than the diameter D of the substrate W.
Fig. 7 is a top view of the shelf 22 of the accommodating shelf C. The first shelf 23 supports the first side 18 of the substrate W. The second shelf 24 supports the second side 19 of the substrate W. The second side 19 is located opposite to the first side 18 with respect to the center J of the substrate W. The first side portion 18 and the second side portion 19 each include a part of the peripheral edge portion 12 of the substrate W. The first side portion 18 and the second side portion 19 may also each include a portion of the main portion 13 of the substrate W.
The accommodating rack C has a bar code (not shown). The bar code is, for example, an identifier for identifying the containing rack C. The bar code is, for example, an identifier for identifying the substrate W in the housing rack C. The bar code is attached to the container 21, for example.
The configuration of each part of the substrate processing apparatus 1 will be described below.
< indexer part 2 >)
Reference is made to fig. 1. The housing rack mounting portions 3 are aligned in the width direction Y. The indexer block 2 has a bar code reader 31. The barcode reader 31 reads a barcode attached to the housing rack C mounted on the housing rack mounting section 3. The barcode reader 31 is attached to the housing rack mounting section 3, for example.
The indexer block 2 has a conveyance space 32. The conveyance space 32 is disposed behind the accommodating rack mounting portion 3. The carrying space 32 extends in the width direction Y. The conveying mechanism 4 is provided in the conveying space 32. The conveying mechanism 4 is disposed behind the accommodating rack mounting portion 3.
The transport mechanism 4 includes a hand 33 and a hand driving unit 34. The hand 33 supports one substrate W in a horizontal posture. The hand 33 supports the substrate W by contacting the lower surface 16 of the substrate W. The hand driving unit 34 is connected to the hand 33. The hand driving unit 34 moves the hand 33.
Reference is made to fig. 1 and 8. Fig. 8 is a left side view showing a configuration of a central portion of the substrate processing apparatus 1 in the width direction Y. The hand driving section 34 includes a rail 34a, a horizontal moving section 34b, a vertical moving section 34c, a rotating section 34d, and a forward and backward moving section 34e. The rail 34a is fixedly provided. The rail 34a is disposed at the bottom of the carrying space 32. The rail 34a extends in the width direction Y. The horizontal moving portion 34b is supported by the rail 34 a. The horizontal movement portion 34b moves in the width direction Y with respect to the rail 34 a. The vertical movement portion 34c is supported by the horizontal movement portion 34 b. The vertical movement portion 34c moves in the up-down direction Z with respect to the horizontal movement portion 34 b. The rotating portion 34d is supported by the vertical moving portion 34 c. The rotating portion 34d rotates with respect to the vertical moving portion 34 c. The rotation portion 34d rotates about the rotation axis A1. The rotation axis A1 is parallel to the up-down direction Z. The advancing and retreating movement part 34e reciprocates in one horizontal direction determined by the orientation of the rotation part 34 d.
The hand 33 is fixed to the advancing and retreating movement part 34e. The hand 33 can move in parallel in the horizontal direction and the up-down direction Z. The hand 33 is rotatable about the rotation axis A1.
Fig. 9 is a plan view of the hand 33. Fig. 10 is a side view of the hand 33. The structure of the hand 33 will be described. The hand 33 has a connecting portion 35. The connection portion 35 is connected to the forward and backward movement portion 34e.
The hand 33 has two bars 36. Each rod 36 is supported by the connecting portion 35. The two rods 36 are separated from each other. The two rods 36 extend straight respectively. The two rods 36 extend in the same direction from the connecting portion 35. The two rods 36 are parallel to each other. The direction in which each lever 36 extends is referred to as a first direction F1. The first direction F1 is horizontal. The first direction F1 is the same as the direction in which the advancing and retreating movement portion 34e reciprocates with respect to the rotating portion 34 d. The horizontal direction orthogonal to the first direction F1 is referred to as a second direction F2. The two bars 36 are aligned in the second direction F2.
The length L1 of the entirety of the two bars 36 in the second direction F2 is smaller than the interval E1. Therefore, the two rods 36 can pass between the first shelf 23 and the second shelf 24 facing each other in the horizontal direction in the up-down direction Z.
Each rod 36 has a length substantially equal to the diameter D of the substrate W. That is, the length L2 of the rod 36 in the first direction F1 is substantially equal to the diameter of the substrate W.
Each bar 36 is individually thin. That is, the length L3 of one lever 36 in the second direction F2 is small. The length L3 is, for example, 10[ mm ]. The length L3 is substantially constant in the first direction F1. That is, the length L3 is substantially constant from the base end portion of the lever 36 to the tip end portion of the lever 36. Each rod 36 has a substantially constant cross-sectional shape in the first direction F1. That is, the sectional shape of the lever 36 is substantially constant from the base end portion of the lever 36 to the tip end portion of the lever 36.
The hand 33 has a plurality (e.g., four) of contact portions 37. The contact portions 37 are mounted to the respective rods 36. Each contact portion 37 protrudes upward from each lever 36. Each contact portion 37 is in contact with the lower surface 16 of the substrate W. More specifically, each contact portion 37 is in contact with the lower surface 16 of the peripheral edge portion 12 of the substrate W. Thus, the hand 33 supports one substrate W in a horizontal posture. Each contact portion 37 is not in contact with the upper surface 17 of the substrate W. The hand 33 allows the substrate W to move upward relative to the hand 33. When the hand 33 supports the substrate W, the contact portion 37 and the rod 36 overlap the substrate W in a plan view.
The hand 33 has a substrate detection section 38. The substrate detection unit 38 detects the substrate W supported by the hand 33. The substrate detection unit 38 is attached to the lever 36.
Refer to fig. 2. The bar code reader 31 is communicably connected to the control section 9. The hand driving unit 34 and the substrate detecting unit 38 of the transport mechanism 4 are communicably connected to the control unit 9. The control unit 9 receives the detection results of the bar code reader 31 and the substrate detection unit 38. The control unit 9 controls the hand driving unit 34.
< treatment area 5 >)
Reference is made to fig. 1. The arrangement of the respective members of the processing region 5 will be described. The processing zone 5 has a carrying space 41. The conveyance space 41 is arranged in the center of the processing region 5 in the width direction Y. The conveyance space 41 extends in the front-rear direction X. The conveyance space 41 is in contact with the conveyance space 32 of the indexer block 2.
The placement unit 6 and the conveying mechanism 8 are provided in the conveying space 41. The placement unit 6 is disposed in front of the conveyance mechanism 8. The placement unit 6 is disposed behind the conveyance mechanism 4. The placement unit 6 is disposed between the conveying mechanism 4 and the conveying mechanism 8.
The processing units 7 are disposed on both sides of the conveyance space 41. The processing unit 7 is disposed so as to surround the side of the conveyance mechanism 8. Specifically, the processing region 5 has a first processing section 42 and a second processing section 43. The first processing unit 42, the conveyance space 41, and the second processing unit 43 are arranged in this order in the width direction Y. The first processing unit 42 is disposed right of the conveyance space 41. The second processing unit 43 is disposed in the left side of the conveyance space 41.
Fig. 11 is a left side view showing a structure of the left part of the substrate processing apparatus 1. In the second processing unit 43, the plurality of processing units 7 are arranged in a matrix in the front-rear direction X and the up-down direction Z. For example, in the second processing section 43, six processing units 7 are arranged in two rows in the front-rear direction X and three layers in the up-down direction Z.
Although not shown, in the first processing unit 42, the plurality of processing units 7 are arranged in a matrix in the front-rear direction X and the up-down direction Z. For example, in the first processing section 42, six processing units 7 are arranged in two rows in the front-rear direction X and three layers in the up-down direction Z.
Fig. 12 is a front view of the placement unit 6. The structure of the placement unit 6 will be described. The mounting portion 6 can mount a plurality of substrates W. The mounting portion 6 has a plurality of shelves 45 and support walls 48. The support wall 48 supports each shelf 45. The shelves 45 are arranged in the up-down direction Z. Two shelves 45 adjacent in the up-down direction Z are adjacent to each other.
Each of the shelves 45 carries a single substrate W in a horizontal posture. The shelf 45 is in contact with the lower surface 16 of the substrate W. For example, the shelf 45 is in contact with the lower surface 16 in the peripheral edge portion 12 of the substrate W. The shelf 45 is not in contact with the upper surface 17 of the substrate W. Thereby, the shelf 45 supports the substrate W. When the shelf 45 supports the substrate W, the shelf 45 allows the substrate W to move upward with respect to the shelf 45.
Each shelf 45 has a first shelf 46 and a second shelf 47, respectively. The first shelf 46 and the second shelf 47 are separated from each other. The first shelf 46 is opposed to the second shelf 47 in the horizontal direction (specifically, the width direction Y). The interval E2 between the first shelf 46 and the second shelf 47 arranged in the horizontal direction is smaller than the diameter D of the substrate W. The interval E2 is greater than the length L1.
Fig. 13 is a plan view of the shelf 45 of the placement unit 6. The first shelf 46 supports the first side 18 of the substrate W. The second shelf 47 supports the second side 19 of the substrate W.
Fig. 14 is a diagram showing the detailed structure of the shelf 45 of the placement unit 6. The first shelf 46 has a first inclined surface 51. The second shelf 47 has a second inclined surface 55. The first inclined surface 51 and the second inclined surface 55 are separated from each other. The second inclined surface 55 is opposed to the first inclined surface 51 in the horizontal direction (specifically, the width direction Y). In the main view, the first inclined surface 51 and the second inclined surface 55 are bilaterally symmetrical. The first inclined surface 51 and the second inclined surface 55 are bilaterally symmetrical when viewed in the front-rear direction X. The first inclined surface 51 contacts the first side 18 of the substrate W. The second inclined surface 55 contacts the second side 19 of the substrate W.
The interval E2 corresponds to the interval between the first inclined surface 51 and the second inclined surface 55 in the horizontal direction. The interval E2 decreases as it goes downward.
The first inclined surface 51 has an upper end 51T. The second inclined surface 55 has an upper end 55T. The interval ET between the upper end 51T and the upper end 55T in the horizontal direction is larger than the diameter D of the substrate W. For example, the interval ET is 306[ mm ]. For example, the difference between the gap ET and the diameter D of the substrate W is 1[% ] or more of the diameter of the substrate W. For example, the difference between the distance ET and the diameter D of the substrate W is 2[ mm ] or more.
The first inclined surface 51 has a lower end 51B. The second inclined surface 55 has a lower end 55B. The interval EB between the lower end 51B and the lower end 55B in the horizontal direction is narrower than the interval ET. The gap EB is smaller than the diameter D of the substrate W.
The angle of the first inclined surface 51 is not constant over the entire first inclined surface 51. The first inclined surface 51 has an upper inclined surface 52 and a lower inclined surface 53. The lower inclined surface 53 is disposed below the upper inclined surface 52. The lower inclined surface 53 is in contact with the lower end of the upper inclined surface 52. The upper inclined surface 52 is inclined at a first angle θ1 with respect to the horizontal plane. The lower inclined surface 53 is inclined at a second angle θ2 with respect to the horizontal plane. The second angle θ2 is smaller than the first angle θ1. The lower inclined surface 53 is more horizontal than the upper inclined surface 52.
Similarly, the second inclined surface 55 has an upper inclined surface 56 and a lower inclined surface 57. The second inclined surface 55 has the same shape as the first inclined surface 51 except that it is laterally symmetrical to the first inclined surface 51. The upper inclined surface 56 and the lower inclined surface 57 have the same shape as the upper inclined surface 52 and the lower inclined surface 53, respectively, except that they are bilaterally symmetrical to the upper inclined surface 52 and the lower inclined surface 53, respectively.
The first inclined surface 51 has a middle point 51M. The intermediate point 51M is a connection position between the upper inclined surface 52 and the lower inclined surface 53. The second inclined surface 55 has a middle point 55M. The intermediate point 55M is a connection position between the upper inclined surface 56 and the lower inclined surface 57. The distance EM between the intermediate point 51M and the intermediate point 55M in the horizontal direction is substantially equal to the diameter D of the substrate W.
Reference is made to fig. 1 and 7. The structure of the conveyance mechanism 8 will be described.
The transport mechanism 8 has a hand 61 and a hand driving unit 62. The hand 61 supports one substrate W in a horizontal posture. The hand driving unit 62 is connected to the hand 61. The hand driving unit 62 moves the hand 61.
The hand driving section 62 includes a support column 62a, a vertical movement section 62b, a rotation section 62c, and a forward and backward movement section 62d. The stay 62a is fixedly provided. The support post 62a extends in the up-down direction Z. The vertical movement portion 62b is supported by the stay 62 a. The vertical movement portion 62b moves in the up-down direction Z with respect to the stay 62 a. The rotating portion 62c is supported by the vertical moving portion 62 b. The rotating portion 62c rotates relative to the vertical moving portion 62 b. The rotation portion 62c rotates about the rotation axis A2. The rotation axis A2 is parallel to the up-down direction Z. The advancing and retreating movement part 62d reciprocates in one horizontal direction determined by the orientation of the rotation part 62 c.
The hand 61 is fixed to the advancing and retreating movement part 62d. The hand 61 is movable in parallel in the horizontal direction and the up-down direction Z. The hand 61 is rotatable about the rotation axis A2.
Fig. 15 is a bottom view of the hand 61. Fig. 16A and 16B are side views of the hand 61. The structure of the hand 61 will be described. The hand 61 has a connecting portion 64. The connecting portion 64 is connected to the advancing and retreating movement portion 62d.
The hand 61 has a base portion 65. The base portion 65 is supported by the connection portion 64. The base portion 65 extends in the horizontal direction from the connection portion 64.
The base portion 65 includes two branch portions 66. The branch portions 66 are separated from each other. Each branch portion 66 extends from the connecting portion 64 in the same direction. The direction in which each branch portion 66 extends is referred to as a third direction F3. The third direction F3 is horizontal. The third direction F3 is the same as the direction in which the advancing and retreating movement portion 62d reciprocates with respect to the rotating portion 62 c. The horizontal direction orthogonal to the third direction F3 is referred to as a fourth direction F4. The two branch portions 66 are arranged in the fourth direction F4. The two branch portions 66 are line-symmetrical with respect to an imaginary line passing between the two branch portions 66 and parallel to the third direction F3 in plan view. Each branch 66 is curved. Each of the branch portions 66 has a portion that is curved away from each other. In other words, each of the branch portions 66 has a portion that is curved so as to bulge outward in the fourth direction F4.
The hand 61 has a suction portion 68. The suction portion 68 is attached to the base portion 65. The suction unit 68 blows out the gas. The suction portion 68 blows the gas downward. The suction portion 68 blows out the gas toward the substrate W from a position above the substrate W. Here, the "upper position of the substrate W" refers to a position higher than the substrate W, that is, a position overlapping the substrate W in a plan view. In fig. 15, the substrate W sucked by the suction portion 68 is shown by a broken line. The suction portion 68 blows out the gas toward the upper surface 17 of the substrate W. The suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. Thereby, the suction portion 68 sucks the substrate W so as not to contact the substrate W. Specifically, a negative pressure is formed by the gas flowing along the upper surface 17 of the substrate W. That is, the air pressure applied to the upper surface 17 of the substrate W is smaller than the air pressure applied to the lower surface 16 of the substrate W. Based on the bernoulli principle, an upward force acts on the substrate W. That is, the substrate W is attracted upward. The substrate W is attracted toward the attraction section 68. However, the suction portion 68 is not in contact with the substrate W sucked by the suction portion 68. The base portion 65 is not in contact with the substrate W sucked by the suction portion 68.
The suction portion 68 includes a plurality (six) of suction pads 69. Each suction pad 69 is provided on the lower surface of the base portion 65. The suction pad 69 is embedded in the base portion 65. The suction pads 69 are separated from each other. The suction pads 69 are arranged on a circumference centered on the center J of the substrate W sucked by the suction portion 68 in a plan view.
Each suction pad 69 is circular in a plan view. Each suction pad 69 has a cylindrical shape having a central axis parallel to the up-down direction Z. Each suction pad 69 has a lower portion that opens downward. The suction pad 69 blows out the gas from the lower portion of the suction pad 69. The suction pad 69 may also form a swirling air flow. The rotating air flow is an air flow that rotates inside the suction pad 69 around the central axis of the suction pad 69. For example, the suction pad 69 may form a swirling air flow before the suction pad 69 blows out the air. For example, the suction pad 69 may form a rotating air flow, and then the suction pad 69 discharges the rotating air flow to the outside of the suction pad 69.
The conveying mechanism 8 has a gas supply path 71. The gas supply path 71 supplies gas to the suction portion 68. The gas supply path 71 has a first end and a second end. The first end of the gas supply path 71 is connected to a gas supply source 72. A second end of the gas supply path 71 is connected to the suction portion 68. A second end of the gas supply path 71 is connected to each suction pad 69. The gas supplied to the suction portion 68 is, for example, nitrogen gas or air. The gas supplied to the suction portion 68 is, for example, a high-pressure gas or a compressed gas.
The conveyance mechanism 8 has a suction adjusting portion 73. The suction adjusting portion 73 is provided in the gas supply path 71. The suction adjusting portion 73 adjusts the flow rate of the gas supplied to the suction portion 68. That is, the suction adjusting section 73 adjusts the flow rate of the gas blown out from the suction section 68. The suction adjusting portion 73 may steplessly adjust the flow rate of the gas supplied to the suction portion 68. The suction adjusting unit 73 may stepwise adjust the flow rate of the gas supplied to the suction unit 68. As the flow rate of the gas supplied to the suction portion 68 increases, the suction force acting on the substrate W increases. The suction adjusting portion 73 includes, for example, a flow rate adjusting valve. The suction adjusting portion 73 may further include an on-off valve.
The hand 61 has a contact portion 74. The contact portion 74 is mounted to the lower surface of the base portion 65. The contact portion 74 protrudes downward from the base portion 65. The contact portion 74 protrudes to a position lower than the suction portion 68. The contact portion 74 is disposed at a position overlapping the substrate W sucked by the suction portion 68 in a plan view. The contact portion 74 is in contact with the upper surface 17 of the substrate W attracted by the attraction portion 68. More specifically, the contact portion 74 is in contact with the upper surface 17 of the peripheral edge portion 12 of the substrate W. The contact portion 74 does not contact the lower surface 16 of the substrate W attracted by the attraction portion 68. The contact portion 74 itself allows the substrate W to move downward with respect to the contact portion 74.
The substrate W is attracted upward by the attraction portion 68, and the contact portion 74 contacts the upper surface 17 of the substrate W, so that the substrate W is supported and held at a predetermined position. That is, the substrate W is sucked upward by the suction portion 68, and the contact portion 74 is brought into contact with the upper surface 17 of the substrate W, whereby the hand 61 holds the substrate W.
The contact portion 74 is disposed farther from the center J of the substrate W sucked by the suction portion 68 than the suction portion 68. The contact portion 74 is disposed radially outward of the substrate W sucked by the suction portion 68 than the suction portion 68.
The contact portion 74 includes a plurality (e.g., two) of first contact portions 75 and a plurality (e.g., two) of second contact portions 76. The position of the first contact portion 75 is substantially the same as the position of the first receiving portion 82 described later in a bottom view. The first contact portion 75 and the second contact portion 76 are separated from each other. The first contact portion 75 is attached to the tip end portion of the base portion 65. The first contact portion 75 is disposed farther from the connecting portion 64 than the suction portion 68. The second contact portion 76 is mounted to the base end portion of the base portion 65. The second contact portion 76 is disposed closer to the connecting portion 64 than the suction portion 68.
The hand 61 has a wall 77. The wall portion 77 is mounted to the lower surface of the base portion 65. The wall portion 77 extends downward from the base portion 65. The wall portion 77 extends to a position lower than the contact portion 74. The wall 77 extends to a position lower than the substrate W sucked by the suction portion 68. The wall 77 is disposed at a position not overlapping the substrate W sucked by the suction unit 68 in a plan view. The wall 77 is disposed laterally of the substrate W sucked by the suction unit 68. The wall 77 is not in contact with the substrate W attracted by the attraction portion 68. However, when the substrate W is displaced in the horizontal direction by a predetermined value or more, the wall 77 contacts the substrate W. Thereby, the wall 77 restricts the substrate W from being shifted in the horizontal direction by a predetermined value or more. The predetermined value is, for example, 3[ mm ].
The wall 77 is disposed farther from the center J of the substrate W sucked by the suction portion 68 than the contact portion 74. The wall 77 is disposed radially outward of the substrate W sucked by the suction portion 68 than the contact portion 74.
The wall portion 77 includes a plurality (e.g., two) of first wall portions 78 and a plurality (e.g., two) of second wall portions 79. The first wall portion 78 and the second wall portion 79 are fixed to the base portion 65. The first wall portion 78 and the second wall portion 79 are separated from each other. The first wall 78 is attached to the distal end of the base 65. The first wall 78 is disposed farther from the connecting portion 64 than the suction portion 68. The second wall 79 is attached to the base end of the base 65. The second wall 79 is disposed closer to the connecting portion 64 than the suction portion 68.
The first wall portion 78 is connected to the first contact portion 75. The first wall portion 78 extends downward from the first contact portion 75. The second wall portion 79 is connected to the second contact portion 76. The second wall portion 79 extends downward from the second contact portion 76.
The hand 61 has a receiving portion 81. The receiving portion 81 is supported by the base portion. The receiving portion 81 is disposed below the substrate W sucked by the suction portion 68. The receiving portion 81 is not in contact with the substrate W sucked by the suction portion 68. The receiving portion 81 is capable of receiving the lower surface 16 of the substrate W. That is, the receiving portion 81 can be in contact with the lower surface 16 of the substrate W. The receiving portion 81 can support the substrate W. The receiving portion 81 is not in contact with the upper surface 17 of the substrate W. The receiving portion 81 allows the substrate W to move upward relative to the receiving portion 81.
The receiving portion 81 has a plurality of (e.g., two) first receiving portions 82. The first receiving portion 82 is supported by the base portion 65. The first receiving portion 82 is fixed to the base portion 65. The first receiving portion 82 is not movable relative to the base portion 65. The first receiving portion 82 is disposed below the substrate W sucked by the suction portion 68. The first receiving portion 82 is capable of receiving the lower surface 16 of the substrate W. That is, the first receiving portion 82 can be in contact with the lower surface 16 of the substrate W.
The first receiving portion 82 is disposed farther from the center J of the substrate W sucked by the suction portion 68 than the suction portion 68. The first receiving portion 82 is disposed radially outward of the substrate W sucked by the suction portion 68 than the suction portion 68. The first receiving portion 82 is disposed at the distal end portion of the base portion 65. The first receiving portion 82 is disposed farther from the connecting portion 64 than the suction portion 68.
The first receiving portion 82 is disposed below the first contact portion 75. The first receiving portion 82 overlaps the first contact portion 75 in a plan view.
The first receiving portion 82 is connected to the first wall portion 78. The first receiving portion 82 extends in the horizontal direction from the first wall portion 78. The first receiving portion 82 extends from the first wall portion 78 toward the center J of the substrate W attracted by the attraction portion 68 in a plan view.
The first contact portion 75, the first wall portion 78, and the first receiving portion 82 are integrally formed members. The first contact portion 75, the first wall portion 78, and the first receiving portion 82 cannot be separated from each other. The second contact portion 76 and the second wall portion 79 are integrally formed members. The second contact portion 76 and the second wall portion 79 cannot be separated from each other.
The receiving portion 81 has a plurality of (e.g., two) second receiving portions 83. The second receiving portion 83 is supported by the base portion 65. The second receiving portion 83 is disposed below the substrate W sucked by the suction portion 68. The second receiving portion 83 is capable of receiving the lower surface 16 of the substrate W. That is, the second receiving portion 83 is contactable with the lower surface 16 of the substrate W.
The second receiving portion 83 is disposed farther from the center J of the substrate W sucked by the suction portion 68 than the suction portion 68. The second receiving portion 83 is disposed radially outward of the substrate W sucked by the suction portion 68 than the suction portion 68. The second receiving portion 83 is disposed at the base end portion of the base portion 65. The second receiving portion 83 is disposed closer to the connecting portion 64 than the suction portion 68. The second receiving portion 83 is disposed between the two branching portions 66. The second receiving portion 83 is disposed between the two second contact portions 76.
The second receiving portion 83 is movable relative to the base portion 65. The second receiving portion 83 is movable in the horizontal direction with respect to the base portion 65. Specifically, the second receiving portion 83 is movable between the drop-off preventing position and the retracted position. In fig. 15, the second receiving portion 83 at the drop-off preventing position is shown by a broken line. In fig. 15, the second receiving portion 83 in the retracted position is shown by a solid line. When the second receiving portion 83 moves from the retracted position to the drop-off preventing position, the second receiving portion 83 approaches the first receiving portion 82. When the second receiving portion 83 moves from the drop-off prevention position to the retracted position, the second receiving portion 83 is away from the first receiving portion 82. When the second receiving portion 83 is at the retracted position, the second receiving portion 83 does not overlap the substrate W sucked by the suction portion 68 in a plan view.
Fig. 17 is a plan view of the suction portion 68, the substrate W sucked by the suction portion 68, and the receiving portion 81. In fig. 17, the second receiving portion 83 is located at the fall-off preventing position. At least a part of the first receiving portion 82 overlaps the substrate W sucked by the suction portion 68 in a plan view. When the second receiving portion 83 is at the separation preventing position, at least a part of the second receiving portion 83 overlaps the substrate W sucked by the suction portion 68 in a plan view. The second receiving portion 83 is disposed opposite to the first receiving portion 82 with respect to the center J of the substrate W sucked by the suction portion 68.
Fig. 18 is a plan view of the receiving portion 81. In fig. 18, the second receiving portion 83 is located at the retracted position. When the second receiving portion 83 is at the retracted position, the space between the first receiving portion 82 and the second receiving portion 83 is larger than the substrate W. When the second receiving portion 83 is at the retracted position, the substrate W can pass between the first receiving portion 82 and the second receiving portion 83 in the vertical direction Z in a horizontal posture. In fig. 18, for convenience of explanation, a substrate W is shown. The position of the substrate W shown in fig. 18 is different from the position of the substrate W sucked by the suction portion 68.
Reference is made to fig. 15, 16A, 16B. The wall portion 77 further includes a third wall portion 80. The third wall portion 80 is connected to the second receiving portion 83. The third wall portion 80 extends upward from the second receiving portion 83. The second receiving portion 83 extends from the third wall portion 80 in the horizontal direction. The second receiving portion 83 extends from the third wall portion 80 toward the center J of the substrate W attracted by the attraction portion 68 in a plan view.
The second receiving portion 83 and the third wall portion 80 are integrally formed members. The second receiving portion 83 and the third wall portion 80 cannot be separated from each other. The second receiving portion 83 and the third wall portion 80 move integrally. The third wall portion 80 is also movable relative to the base portion 65.
The hand 61 has a receiving portion driving portion 86. The receiving portion driving portion 86 is supported by the base portion 65, for example. The receiver driving unit 86 is connected to the second receiver 83. For example, the receiving portion driving portion 86 is connected to the second receiving portion 83 via the third wall portion 80. The receiver driving unit 86 moves the second receiver 83 relative to the base unit 65. The receiver driving unit 86 moves the second receiver 83 in the horizontal direction. The receiver driving unit 86 reciprocates the second receiver 83 in the third direction F3. The receiving portion driving portion 86 brings the second receiving portion 83 close to the first receiving portion 82, and brings the second receiving portion 83 away from the first receiving portion 82. The receiver driving unit 86 moves the second receiver 83 between the drop-off preventing position and the retracted position.
The receiver driving unit 86 includes an actuator 87. The actuator 87 moves the second receiving portion 83 by a power source that inputs power to the actuator 87. The actuator 87 moves the second receiving portion 83 from the retracted position to the drop-preventing position, and moves the second receiving portion 83 from the drop-preventing position to the retracted position. The actuator 87 is, for example, a cylinder. The power source of the air cylinder is air pressure. The actuator 87 is, for example, an electric motor. The power source of the electric motor is electric power.
The receiver driving portion 86 further has an elastic member 88. The elastic member 88 biases the second receiving portion 83 from the retracted position toward the separation preventing position. The elastic member 88 is, for example, a spring. The elastic member 88 may be disposed outside the actuator 87. Alternatively, the elastic member 88 may be disposed inside the actuator 87.
When the power source of the actuator 87 is stopped, the second receiving portion 83 is held at the retracted position by the elastic member 88.
The hand 61 has a substrate detection portion 89. The substrate detection unit 89 detects the substrate W supported by the hand 61. The substrate detection unit 89 is mounted on the base unit 65.
Refer to fig. 2. The control unit 9 is communicably connected to the hand driving unit 62, the suction adjusting unit 73, the receiving unit driving unit 86 (actuator 87), and the substrate detecting unit 89 of the conveyance mechanism 8. The control section 9 receives the detection result of the substrate detection section 89. The control unit 9 controls the hand driving unit 62, the suction adjusting unit 73, and the receiving unit driving unit 86 (actuator 87).
Reference is made to fig. 1 and 11. The basic structure of the processing unit 7 will be described. Each processing unit 7 includes a substrate holding portion 91, a rotation driving portion 92, and a shutter 93. The substrate holding portion 91 holds one substrate W. The substrate holding portion 91 holds the substrate W in a horizontal posture. The rotation driving section 92 is connected to the substrate holding section 91. The rotation driving section 92 rotates the substrate holding section 91. The baffle 93 is disposed so as to surround the side of the substrate holding portion 91. The baffle 93 receives the treatment liquid.
The process unit 7 is divided into a first process unit 7A and a second process unit 7B according to the structure of the substrate holding portion 91. The substrate holding portion 91 of the first processing unit 7A is referred to as a bernoulli chuck or bernoulli clamp. The bernoulli chuck is adapted to hold a relatively thin substrate W. The substrate holding portion 91 of the second processing unit 7B is referred to as a mechanical chuck or a mechanical clamp. The mechanical chuck is adapted to hold a relatively thick substrate W.
For example, the six processing units 7 disposed in the first processing unit 42 are the first processing units 7A, respectively. For example, the six processing units 7 disposed in the second processing unit 43 are the second processing units 7B, respectively.
Hereinafter, the substrate holding portion 91 of the first processing unit 7A will be appropriately referred to as "first substrate holding portion 91A". The rotation driving portion 92 of the first processing unit 7A is appropriately referred to as a "first rotation driving portion 92A". The substrate holding portion 91 of the second processing unit 7B is appropriately referred to as a "second substrate holding portion 91B". The rotation driving portion 92 of the second processing unit 7B is appropriately referred to as a "second rotation driving portion 92B".
Fig. 19 is a diagram schematically showing the structure of the first processing unit 7A. Fig. 19 omits illustration of the baffle 93. The structure of the first processing unit 7A will be described.
The first substrate holding portion 91A has a first plate 101. The first plate 101 has a substantially disc shape. The first plate 101 has an upper surface 102. The upper surface 102 is substantially horizontal. The upper surface 102 is substantially planar.
The first rotation driving portion 92A is connected to a lower portion of the first plate 101. The first rotation driving unit 92A rotates the first plate 101. The first plate 101 is rotated about the rotation axis A3 by the first rotation driving section 92A. The rotation axis A3 is parallel to the up-down direction Z. The rotation axis A3 passes through the center of the first plate 101.
Fig. 20 is a top view of the first plate 101. The upper surface 102 of the first plate 101 is circular in plan view. The upper surface 102 of the first plate 101 is larger than the substrate W in plan view.
The first substrate holding portion 91A has a plurality (e.g., 30) of fixing pins 103. The fixing pins 103 support the substrate W. Each fixing pin 103 is fixed to the first plate 101. Each fixing pin 103 is immovable relative to the first plate 101. Each fixing pin 103 is non-rotatable with respect to the first plate 101. Each fixing pin 103 does not have a movable portion movable with respect to the fixing pin.
The fixing pin 103 is disposed at a peripheral edge portion of the upper surface 102 of the first plate 101. The fixing pins 103 are arranged on a circumference centered on the rotation axis A3 in a plan view. The fixing pins 103 are separated from each other.
Refer to fig. 19 and 20. The fixing pin 103 protrudes upward from the upper surface 102 of the first plate 101. The fixing pin 103 contacts the lower surface 16 of the substrate W. More specifically, the fixing pin 103 is in contact with the lower surface 16 of the peripheral edge portion 12 of the substrate W. Thereby, the fixing pins 103 support the substrate W at a position higher than the upper surface 102 of the first plate 101. In fig. 20, a substrate W supported by the pins 103 is shown by a broken line.
The fixing pins 103 do not contact the upper surface 17 of the substrate W. The fixing pins 103 allow the substrate W to move upward with respect to the fixing pins 103. The fixing pins 103 do not contact the edge 20 of the substrate W. The fixing pins 103 themselves allow the substrate W to slide with respect to the fixing pins 103. Thus, the fixing pins 103 themselves do not hold the substrate W.
The first substrate holding portion 91A has a gas outlet 104. The gas outlet 104 is formed in the upper surface 102 of the first plate 101. The gas outlet 104 is arranged at a position overlapping the substrate W supported by the fixing pins 103 in a plan view. The gas outlet 104 blows out gas upward. The gas outlet 104 blows out gas between the upper surface 102 of the first plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103. The gas outlet 104 blows out a gas toward the substrate W from a position below the substrate W supported by the fixing pins 103. Gas is supplied between the upper surface 102 of the first plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103. The gas flows along the lower surface 16 of the substrate W supported by the fixing pins 103. Thereby, the gas outlet 104 attracts the substrate W. Specifically, the negative pressure is formed by the gas flowing along the lower surface 16 of the substrate W. That is, the air pressure received by the lower surface 16 of the substrate W is smaller than the air pressure received by the upper surface 17 of the substrate W. Based on the bernoulli principle, a downward force acts on the substrate W. That is, the substrate W is sucked downward. The substrate W is attracted toward the gas outlet 104 and the first plate 101. However, the gas outlet 104 is not in contact with the substrate W. The first plate 101 is not in contact with the substrate W either.
The substrate W is sucked downward by the gas outlet 104, and the fixing pins 103 are brought into contact with the lower surface 16 of the substrate W, so that the substrate W is supported and held at a predetermined position. The substrate W does not slide in the horizontal direction with respect to the fixing pins 103 by the attractive force acting on the substrate W. That is, the substrate W is sucked downward through the gas outlet 104, and the fixing pins 103 are brought into contact with the lower surface 16 of the substrate W, whereby the first substrate holding portion 91A holds the substrate W.
The gas outlet 104 has a first outlet 105 and a plurality of second outlets 106. The first blowout port 105 is disposed in the center of the upper surface 102 of the first plate 101. The first blowout port 105 is disposed on the rotation axis A3. The second blowout port 106 is disposed radially outward of the rotation axis A3 than the first blowout port 105. The second blow-out port 106 is disposed radially inward of the rotation axis A3 than the fixing pin 103. The second air outlet ports 106 are arranged on a circumference centered on the rotation axis A3 in a plan view.
The first processing unit 7A has a first gas supply path 107 and a second gas supply path 108. The first gas supply path 107 supplies gas to the first blowout port 105. The second gas supply path 108 supplies gas to the second blowout port 106. A part of the first gas supply path 107 and a part of the second gas supply path 108 are formed inside the first plate 101. The first gas supply path 107 has a first end and a second end. A first end of the first gas supply path 107 is connected to a gas supply source 109. A second end of the first gas supply path 107 is connected to the first blowout port 105. The second gas supply path 108 has a first end and a second end. The first end of the second gas supply path 108 is connected to a gas supply source 109. A second end of the second gas supply path 108 is connected to the second blowout port 106. The gas supplied to the first and second outlets 105 and 106 is, for example, nitrogen gas or air. The gas supplied to the first and second outlets 105 and 106 is, for example, high-pressure gas or compressed gas.
The first processing unit 7A has a first blowout preventer 111 and a second blowout preventer 112. The first blowout control part 111 is provided in the first gas supply path 107. The second blowout control part 112 is provided in the second gas supply path 108. The first blowout control unit 111 controls the flow rate of the gas blown out from the first blowout port 105. That is, the first blowout preventer 111 adjusts the flow rate of the gas supplied to the first blowout port 105. The second blowout control unit 112 controls the flow rate of the gas blown out from the second blowout port 106. That is, the second blowout control part 112 controls the flow rate of the gas supplied to the second blowout port 106. As the flow rate of the gas blown out from the first outlet 105 increases, the attractive force acting on the substrate W increases. As the flow rate of the gas blown out from the second outlet 106 increases, the attractive force acting on the substrate W increases.
The first blowout preventer 111 cannot regulate the flow rate of the gas blown out from the second blowout port 106. The second blowout control part 112 cannot control the flow rate of the gas blown out from the first blowout port 105. The first blowout control unit 111 and the second blowout control unit 112 can operate independently of each other. Thus, the flow rate of the gas blown out from the first outlet 105 and the flow rate of the gas blown out from the second outlet 106 can be adjusted independently of each other. The first blowout control part 111 and the second blowout control part 112 include, for example, flow rate control valves, respectively. The first blowout control part 111 and the second blowout control part 112 may further include an on-off valve.
Refer to fig. 20. The processing unit 7 has a plurality of (e.g., six) position adjustment pins 113. The position adjustment pin 113 is supported by the first plate 101. The position adjustment pin 113 is movable in the horizontal direction with respect to the first plate 101. By the movement of the position adjustment pins 113 with respect to the first plate 101, the position adjustment pins 113 can be brought into contact with the substrate W supported by the fixing pins 103 and can be separated from the substrate W supported by the fixing pins 103. More specifically, the position adjusting pins 113 can be brought into contact with the edge 20 of the substrate W supported by the fixing pins 103. The position adjusting pins 113 adjust the position of the substrate W supported by the fixing pins 103. The position adjusting pin 113 adjusts the position of the substrate W in the horizontal direction. The position adjusting pins 113 position the center J of the substrate W supported by the fixing pins 103 on the rotation axis A3.
In the present specification, the position of the position adjustment pin 113 in contact with the substrate W is referred to as an "adjustment position". The position of the position adjustment pin 113 separated from the substrate W is referred to as a "retracted position". The position adjustment pin 113 is movable between an adjustment position and a retracted position.
The position adjustment pin 113 is disposed at the peripheral edge of the upper surface 102 of the first plate 101. The position adjustment pins 113 are arranged on a circumference centered on the rotation axis A3 in a plan view. The position adjusting pins 113 are disposed at positions substantially at the same height as the substrate W supported by the fixing pins 103.
Fig. 21A and 21B are plan views showing the detailed structure of the position adjustment pin. Fig. 22A and 22B are side views of the position adjustment pin. Fig. 21A and 22A show the position adjustment pin 113 in the retracted position. Fig. 21B and 22B show the position adjustment pin 113 in the adjustment position. Each position adjustment pin 113 is fixed to the shaft portion 114. The shaft portion 114 extends downward from the position adjustment pin 113. The shaft portion 114 is supported by the first plate 101. The position adjustment pin 113 is supported by the first plate 101 via a shaft portion 114. The shaft portion 114 is rotatable relative to the first plate 101. The shaft 114 is rotatable about the rotation axis A4. The rotation axis A4 is parallel to the up-down direction Z. The rotation axis A4 passes through the center of the shaft portion 114. The position adjustment pin 113 is disposed at a position eccentric to the rotation axis A4. By the rotation of the shaft portion 114 with respect to the first plate 101, the position adjustment pin 113 moves in the horizontal direction with respect to the first plate 101. Specifically, the position adjustment pin 113 rotationally moves about the rotation axis A4. Thereby, the position adjustment pin 113 can be close to the rotation axis A3, and can be distant from the rotation axis A3. The position adjustment pin 113 is moved toward the adjustment position by the position adjustment pin 113 approaching the rotation axis A3. When the position adjustment pins 113 are at the adjustment position, the position adjustment pins 113 contact the edge 20 of the substrate W supported by the fixing pins 103. The position adjustment pin 113 presses the edge 20 of the substrate W in contact with the position adjustment pin 113 toward the rotation axis A3. The edge 20 of the substrate W is pressed by a plurality of position adjustment pins 113 provided at different positions, and the substrate W is adjusted to a predetermined position. The position adjustment pin 113 is moved toward the retracted position by the position adjustment pin 113 being away from the rotation axis A3. When the position adjustment pins 113 are at the retracted position, the position adjustment pins 113 are separated from the edge 20 of the substrate W supported by the fixing pins 103. When the position adjustment pins 113 are at the retracted position, the position adjustment pins 113 do not contact the substrate W supported by the fixing pins 103.
Refer to fig. 20. The processing unit 7 has a plurality of (e.g., six) lift pins 116. The lift pins 116 are disposed at the peripheral edge of the upper surface 102 of the first plate 101. The lift pins 116 are arranged on a circumference centered on the rotation axis A3 in a plan view.
Fig. 23A and 23B are side views of the lift pin 116. The lift pin 116 is supported by the first plate 101. The lift pin 116 is supported so as to be movable in the up-down direction Z with respect to the first plate 101. The lift pins 116 support the substrate W. The lift pins 116 move the substrate W supported by the lift pins 116 in the up-down direction Z.
Fig. 23A shows the lift pin 116 in an up position. The lift pin 116 can be moved to an upper position. The upper position is higher than the fixing pin 103. The lift pins 116 can support the substrate W at an upper position. When the lift pins 116 support the substrate W at the upper position, the substrate W is positioned higher than the fixing pins 103.
Refer to fig. 23B. The lift pin 116 is movable downward from an upper position. The lift pins 116 lower the substrate W. Specifically, the lift pins 116 lower the substrate W from a position higher than the fixing pins 103. Thereby, the lift pins 116 transfer the substrate W to the fixing pins 103. In this way, in a state where the lift pins 116 support the substrate W, the lift pins 116 move downward from the upper position, and thereby the lift pins 116 transfer the substrate W to the fixing pins 103. After the lift pins 116 transfer the substrate W to the pins 103, the lift pins 116 move downward further with respect to the first plate 101 and are separated from the substrate W supported by the pins 103.
In the present specification, a position of the lift pins 116 that does not contact the substrate W supported by the fixing pins 103 is referred to as a lower position. Fig. 23B shows the lift pin 116 in a lower position. The lower position is lower than the upper position. The lift pin 116 can be moved to a lower position.
The substrate W is removed from the fixing pins 103 by moving the lift pins 116 upward from the lower position.
Thus, the lift pin 116 moves between the upper and lower positions. Thereby, the lift pins 116 transfer the substrate W to the pins 103, and the substrate W is removed from the pins 103.
Refer to fig. 19. The first processing unit 7A has a processing liquid supply section 121. The processing liquid supply unit 121 supplies a processing liquid to the substrate W.
The treatment liquid supply section 121 includes a nozzle 122. The nozzle 122 ejects the processing liquid toward the substrate W. The nozzle 122 is provided so as to be movable between a processing position and a retracted position. The nozzle 122 in the processing position is shown in fig. 19 by a dashed line. Fig. 19 shows the nozzle 122 in the retracted position by a solid line. The processing position is a position above the substrate W held by the first substrate holding portion 91A. When the nozzle 122 is at the processing position, the nozzle 122 overlaps the substrate W held by the first substrate holding portion 91A in a plan view. When the nozzle 122 is at the retracted position, the nozzle 122 does not overlap the substrate W held by the first substrate holding portion 91A in a plan view.
The treatment liquid supply section 121 has a pipe 123. The pipe 123 supplies the processing liquid to the nozzle 122. The pipe 123 has a first end and a second end. A first end of the pipe 123 is connected to a treatment liquid supply source 124. A second end of the pipe 123 is connected to the nozzle 122.
The first processing unit 7A has a flow rate adjusting section 125. The flow rate adjusting portion 125 is provided in the pipe 123. The flow rate adjusting section 125 adjusts the flow rate of the processing liquid supplied to the substrate W by the processing liquid supply section 121. That is, the flow rate adjusting unit 125 adjusts the flow rate of the processing liquid discharged from the nozzle 122.
The first processing unit 7A has a substrate detection section 127. The substrate detection unit 127 detects the substrate W supported by the pins 103. The substrate detection unit 127 detects the position of the substrate W supported by the pins 103. The substrate detection unit 127, for example, photographs the edge 20 of the substrate W supported by the fixing pins 103. The substrate detection unit 127 is, for example, an image sensor. The substrate detection unit 127 is disposed above the first substrate holding unit 91A, for example.
Refer to fig. 2. The control section 9 is communicably connected to the first rotation driving section 92A, the position adjusting pin 113, the lift pin 116, the first blowout control section 111, the second blowout control section 112, the flow rate control section 125, and the substrate detection section 127 of the first processing unit 7A. The control unit 9 receives the detection result of the substrate detection unit 127. The control unit 9 controls the first rotation driving unit 92A, the position adjusting pin 113, the lift pin 116, the first blowout control unit 111, the second blowout control unit 112, and the flow rate control unit 125.
The fixing pin 103 is an example of a supporting portion in the present invention. The position adjustment pin 113 is an example of a position adjustment portion in the present invention. The lift pin 116 is an example of a lift portion in the present invention.
Fig. 24 is a diagram schematically showing the structure of the second processing unit 7B. Fig. 24 omits illustration of the baffle 93. The structure of the second processing unit 7B is described in detail. In addition, the same reference numerals are given to the same structures as those of the first processing unit 7A, and detailed description thereof is omitted.
The second substrate holding portion 91B has a second plate 131. The second plate 131 has a substantially disc shape. The second plate 131 has an upper surface 132. The upper surface 132 is generally horizontal. The upper surface 132 is substantially planar.
The second rotation driving portion 92B is connected to a lower portion of the second plate 131. The second rotation driving part 92B rotates the second plate 131. The second plate 131 is rotated about the rotation axis A5 by the second rotation driving section 92B. The rotation axis A5 is parallel to the up-down direction Z. The rotation axis A5 passes through the center of the second plate 131.
Fig. 25 is a top view of the second plate 131. The upper surface 132 of the second plate 131 is circular in plan view. The upper surface 132 of the second plate 131 is larger than the substrate W in plan view.
The second substrate holding portion 91B has a plurality of (e.g., six) edge contact pins 133. The edge contact pin 133 is mounted to the second plate 131. The edge contact pin 133 is supported by the second plate 131. The edge contact pin 133 is movable relative to the second plate 131. The edge contact pins 133 can contact the edge 20 of the substrate W. For example, when the second substrate holding portion 91B is rotated by the second rotation driving portion 92B, the edge contact pins 133 contact the edge 20 of the substrate W. When the second substrate holding portion 91B is rotated by the second rotation driving portion 92B, the edge contact pins 133 hold the edge 20 of the substrate W so that the substrate W does not slide with respect to the edge contact pins 133. In fig. 25, a substrate W held by the edge contact pins 133 is shown by a broken line.
The edge contact pin 133 is disposed at the peripheral edge of the second plate 131. The edge contact pins 133 are arranged on a circumference centered on the rotation axis A5 in a plan view.
Fig. 26A and 26B are plan views showing the detailed structure of the edge contact pin 133. Fig. 27A and 27B are side views of the edge contact pin 133. The structure associated with the edge contact pins 133 and the edge contact pins 133 is illustrated.
Each edge contact pin 133 is fixed to the tab 134. The tab 134 is sufficiently smaller than the second plate 131. The tab 134 has a wedge shape in plan view. The tab 134 extends in a horizontal direction.
The tab 134 also supports a lower surface contact pin 135. The lower surface contact pin 135 is also fixed to the small piece 134. The edge contact pins 133 and the lower surface contact pins 135 protrude upward from the small piece 134. The lower surface contact pins 135 contact the lower surface 16 of the substrate W. More specifically, the lower surface contact pins 135 contact the lower surface 16 of the peripheral edge portion 12 of the substrate W. Thereby, the lower surface contact pins 135 support the substrate W. The lower surface contact pins 135 do not contact the upper surface 17 of the substrate W. The lower surface contact pins 135 allow the substrate W to move upward with respect to the lower surface contact pins 135.
Tab 134 is secured to shaft 136. The shaft 136 extends downward from the tab 134. The shaft portion 136 is supported by the second plate 131. The edge contact pin 133 and the lower surface contact pin 135 are supported by the second plate 131 via the shaft portion 136. The shaft 136 is rotatable relative to the second plate 131. The shaft 136 is rotatable about the rotation axis A6. The rotation axis A6 is parallel to the up-down direction Z. The rotation axis A6 passes through the center of the shaft 136.
The lower surface contact pin 135 is arranged on the rotation axis A6. The rotation axis A6 contacts the center of the pin 135 through the lower surface. As the shaft portion 136 rotates relative to the second plate 131, the lower surface contact pin 135 also rotates relative to the second plate 131. However, the position of the lower surface contact pins 135 with respect to the second plate 131 is substantially unchanged. The distance of the lower surface contact pin 135 from the rotation axis A5 does not vary.
The edge contact pin 133 is disposed at a position eccentric to the rotation axis A6.
By the rotation of the shaft portion 136 with respect to the second plate 131, the edge contact pin 133 moves in the horizontal direction with respect to the second plate 131. Specifically, the end edge contact pin 133 can be close to the rotation axis A5, and can be distant from the rotation axis A5.
Refer to fig. 26A and 27A. By the edge contact pins 133 approaching the rotation axis A5, the edge contact pins 133 are in contact with the edge 20 of the substrate W supported by the lower surface contact pins 135. The edge contact pins 133 may press the edge 20 of the substrate W in contact with the edge contact pins 133 toward the rotation axis A5.
Refer to fig. 26B and 27B. By the edge contact pins 133 being away from the rotation axis A5, the edge contact pins 133 are separated from the edge 20 of the substrate W supported by the lower surface contact pins 135.
When the second substrate holding portion 91B is rotated by the second rotation driving portion 92B, the edge contact pins 133 are not separated from the substrate W. The second rotation driving portion 92B rotates the second substrate holding portion 91B in a state where the edge contact pins 133 are in contact with the edge 20 of the substrate W. Thus, the substrate W does not slide with respect to the edge contact pins 133 when the second substrate holding portion 91B rotates. That is, the edge contact pins 133 hold the edge 20 of the substrate W.
In the second substrate holding portion 91B, the lift pins 116 can support the substrate W at a position higher than the lower surface contact pins 135. The lift pins 116 can transfer the substrate W to the lower surface contact pins 135, and can remove the substrate W from the lower surface contact pins 135.
Further, the second substrate holding portion 91B does not attract the substrate W held by the edge contact pins 133. The second substrate holding portion 91B does not blow out gas between the upper surface 132 of the second plate 131 and the lower surface 16 of the substrate W held by the edge contact pins 133. The second plate 131 has no gas outlet.
Refer to fig. 2. The control unit 9 is communicably connected to the second rotation driving unit 92B, the lift pin 116, the flow rate adjusting unit 125, and the edge contact pin 133 of the second processing unit 7B. The control unit 9 controls the second rotation driving unit 92B, the lift pin 116, the flow rate adjusting unit 125, and the edge contact pin 133.
The edge contact pin 133 is an example of an edge contact portion in the present invention.
Operation example of substrate processing apparatus 1
The following operation examples are described in order.
a) Operation example of the control section 9 for acquiring the shape of the substrate W
b) Operation example of the conveying mechanism 4
c) Example of operation of the conveying mechanism 8
d) Operation example of the first processing unit 7A
e) Operation example of the second processing unit 7B
Operation example of the control section 9 for acquiring the shape of the substrate W
Fig. 28 shows steps of an example of the operation of the control unit 9 to obtain the shape of the substrate W.
Step S1
The bar code reader 31 reads a bar code attached to the accommodating shelf C. The barcode reader 31 outputs the detection result of the barcode reader 31 to the control section 9.
Step S2
The control section 9 determines the shape of the substrate W based on the detection result of the barcode reader 31. Specifically, the control unit 9 determines which of the first substrate W1, the second substrate W2, and the third substrate W3 the substrate W in the housing rack C belongs to. The control unit 9 determines which of the normal-diameter substrate WN and the large-diameter substrate WL the substrate W in the housing rack C belongs to.
After the substrate W is carried out from the housing rack C, the control unit 9 associates and manages the position of the substrate W with the shape of the substrate W. Specifically, the control unit 9 manages the shape of the substrate W transported by the transport mechanisms 4 and 8 at each timing. The control unit 9 manages the shape of the substrate W placed on the placement unit 6 at each time. The control unit 9 manages the shape of the substrate W processed by the processing unit 7 at each time. The control unit 9 may refer to the detection results of the substrate detection units 38, 89, 127 as appropriate in order to manage the position of the substrate W and the shape of the substrate W.
Operation example of carrying mechanism 4
Fig. 29 is a flowchart showing steps of controlling the control unit 9 and operating the conveyance mechanism 4.
Step S11
The control unit 9 determines the height position of the hand 33 when the hand 33 of the transport mechanism 4 is inserted into the storage rack C. Specifically, the control unit 9 determines the height position of the hand 33 when the hand 33 of the conveying mechanism 4 is inserted between two adjacent shelves 22 in the up-down direction Z. Hereinafter, the height position of the hand 33 when the hand 33 of the conveying mechanism 4 is inserted between two adjacent shelves 22 in the up-down direction Z will be simply referred to as "height position HA". The control section 9 changes the height position HA according to the shape of the substrate W. The control unit 9 changes the height position HA according to at least one of the shape of the substrate W removed from the shelf 22 by the transport mechanism 4 and the shape of the substrate W placed on the shelf 22 by the transport mechanism 4.
Specifically, when the substrate W removed from the shelf 22 by the transport mechanism 4 or the substrate W placed on the shelf 22 by the transport mechanism 4 is the first substrate W1, the control unit 9 determines the height position HA as the first height position HA1. When the substrate W removed from the shelf 22 by the transport mechanism 4 or the substrate W placed on the shelf 22 by the transport mechanism 4 is the second substrate W2, the control unit 9 determines the height position HA as the second height position HA2. When the substrate W removed from the shelf 22 by the transport mechanism 4 or the substrate W placed on the shelf 22 by the transport mechanism 4 is the third substrate W3, the control unit 9 determines the height position HA as the third height position HA3. The second height position HA2 is higher than the first height position HA1. The third height position HA3 is higher than the first height position HA1. The third height position HA3 is the same as the second height position HA2.
Similarly, the control unit 9 determines the height position of the hand 33 when the hand 33 of the carrying mechanism 4 is inserted into the mounting unit 6. Specifically, the control unit 9 determines the height position of the hand 33 when the hand 33 of the conveying mechanism 4 is inserted between two adjacent shelves 45 in the up-down direction Z. Hereinafter, the height position of the hand 33 when the hand 33 of the conveying mechanism 4 is inserted between two adjacent shelves 45 in the up-down direction Z will be simply referred to as "height position HB". The control section 9 changes the height position HB according to the shape of the substrate W. The control unit 9 changes the height position HB according to at least one of the shape of the substrate W removed from the shelf 45 by the transport mechanism 4 and the shape of the substrate W placed on the shelf 45 by the transport mechanism 4.
Specifically, when the substrate W removed from the shelf 45 by the transport mechanism 4 or the substrate W placed on the shelf 45 by the transport mechanism 4 is the first substrate W1, the control unit 9 determines the height position HB as the first height position HB1. When the substrate W removed from the shelf 45 by the transport mechanism 4 or the substrate W placed on the shelf 45 by the transport mechanism 4 is the second substrate W2, the control unit 9 determines the height position HB as the second height position HB2. When the substrate W removed from the shelf 45 by the transport mechanism 4 or the substrate W placed on the shelf 45 by the transport mechanism 4 is the third substrate W3, the control unit 9 determines the height position HB as the third height position HB3. The second height position HB2 is higher than the first height position HB1. The third height position HB3 is higher than the first height position HB1. The third height position HB3 is the same as the second height position HB2.
Step S12
The control unit 9 determines the amount of insertion of the hand 33 when the hand 33 of the conveyance mechanism 4 is inserted between two adjacent shelves 22 in the up-down direction Z. The amount of insertion of the hand 33 between the two shelves 22 adjacent in the up-down direction Z corresponds to the amount of movement of the hand 33 in the front-back direction X when the hand 33 of the conveying mechanism 4 is inserted between the two shelves 22 adjacent in the up-down direction Z. Hereinafter, the amount of insertion of the hand 33 between two adjacent shelves 22 in the up-down direction Z will be abbreviated as "insertion amount KA". The control unit 9 changes the insertion amount KA according to the shape of the substrate W. The control unit 9 changes the insertion amount KA according to at least one of the shape of the substrate W removed from the shelf 22 by the transport mechanism 4 and the shape of the substrate W placed on the shelf 22 by the transport mechanism 4.
When the substrate W removed from the shelf 22 by the transport mechanism 4 or the substrate W placed on the shelf 22 by the transport mechanism 4 is the normal diameter substrate WN, the control unit 9 determines the insertion amount KA as the first insertion amount KA1. When the substrate W removed from the shelf 22 by the transport mechanism 4 or the substrate W placed on the shelf 22 by the transport mechanism 4 is the large-diameter substrate WL, the control unit 9 determines the insertion amount KA as the second insertion amount KA2. The second insertion amount KA2 is larger than the first insertion amount KA1.
Similarly, the control unit 9 determines the amount of insertion of the hand 33 when the hand 33 of the conveyance mechanism 4 is inserted between two adjacent shelves 45 in the up-down direction Z. Hereinafter, the insertion amount of the hand 33 inserted between two shelves 45 adjacent in the up-down direction Z is abbreviated as "insertion amount KB". The control section 9 changes the insertion amount KB according to the shape of the substrate W. The control unit 9 changes the insertion amount KB according to at least one of the shape of the substrate W removed from the shelf 45 by the transport mechanism 4 and the shape of the substrate W placed on the shelf 45 by the transport mechanism 4.
When the substrate W removed from the shelf 45 by the transport mechanism 4 or the substrate W placed on the shelf 45 by the transport mechanism 4 is the normal diameter substrate WN, the control unit 9 determines the insertion amount KB as the first insertion amount KB1. When the substrate W removed from the shelf 45 by the transport mechanism 4 or the substrate W placed on the shelf 45 by the transport mechanism 4 is the large-diameter substrate WL, the control unit 9 determines the insertion amount KB as the second insertion amount KB2. The second insertion amount KB2 is larger than the first insertion amount KB1.
Step S13
The control unit 9 determines the movement speed and acceleration of the hand 33 of the conveyance mechanism 4. Hereinafter, the moving speed of the hand 33 of the conveying mechanism 4 will be abbreviated as "moving speed VA". Hereinafter, the acceleration of the hand 33 of the conveying mechanism 4 will be abbreviated as "acceleration AA". The control section 9 changes the moving speed VA according to whether or not the transport mechanism 4 supports the substrate W. The control section 9 changes the acceleration AA depending on whether or not the transport mechanism 4 supports the substrate W.
When the control unit 9 determines the movement speed VA and the acceleration AA, the control unit 9 may appropriately refer to the detection result of the substrate detection unit 38.
When the transport mechanism 4 supports the substrate W, the control unit 9 determines the movement speed VA to be the first speed VA1. When the transport mechanism 4 does not support the substrate W, the control unit 9 determines the moving speed VA to be the second speed VA2. The second speed VA2 is greater than the first speed VA1. For example, the first speed VA1 is 50% or less of the second speed VA2.
When the transport mechanism 4 supports the substrate W, the control unit 9 determines the acceleration AA as the first acceleration AA1. When the substrate W is not supported by the transport mechanism 4, the control unit 9 determines the acceleration AA as the second acceleration AA2. The second acceleration AA2 is greater than the first acceleration AA1. For example, the first acceleration AA1 is 70% or less of the second acceleration AA2.
Step S14
The control unit 9 controls the conveyance mechanism 4 (specifically, the hand driving unit 34) by the determined height positions HA and HB, the insertion amounts KA and KB, the movement speed VA, and the acceleration AA.
Step S15
The hand driving unit 34 of the carrying mechanism 4 moves the hand 33 under the control of the control unit 9. Thereby, the conveyance mechanism 4 conveys the substrate W.
Specifically, the following operation examples will be described.
b1 Operation example of the transport mechanism 4 for removing the substrate W from the shelf 22 of the accommodating frame C
b2 Operation example of the transporting mechanism 4 for transporting the substrate W from the accommodating rack C to the mounting portion 6
b3 Operation example of placing the substrate W on the shelf 45 of the mounting portion 6 by the conveyance mechanism 4
An example of the operation of the transport mechanism 4 for removing the substrate W from the shelf 22 of the accommodating frame C
Fig. 30A to 30D are diagrams schematically showing an example of the operation of the transport mechanism 4 to remove the substrate W from the shelf 22 of the storage rack C.
Refer to fig. 30A. The hand 33 does not support the substrate W. The hand 33 moves to a position facing the accommodating frame C. The hand 33 is adjusted to the height position HA determined by the control section 9.
Refer to fig. 30B. The hand 33 enters the inside of the accommodating frame C. The hand 33 enters between two shelves 22 adjacent in the up-down direction Z at the height position HA determined by the control section 9.
When the hand 33 enters the accommodating frame C, the hand 33 moves in the horizontal direction. Specifically, the hand 33 moves in the front-rear direction X. The hand 33 moves forward. The first direction F1 in which the lever 36 extends coincides with the direction of movement of the hand 33. In other words, in a state where the first direction F1 is maintained as the moving direction of the hand 33, the hand 33 enters between two shelves 22 adjacent in the up-down direction Z.
The hand 33 enters the insertion amount KA determined by the control unit 9 between two adjacent shelves 22 in the up-down direction Z, and then stops.
In the step up to this point, the hand 33 moves at the second speed VA2 and the second acceleration AA 2.
Refer to fig. 30C. The hand 33 moves upward. The hand 33 passes between the first shelf 23 and the second shelf 24 included in one shelf 22. Thereby, the hand 33 removes one substrate W from one shelf 22.
Refer to fig. 30D. In a state where the hand 33 supports the substrate W, the hand 33 moves backward and moves out of the housing frame C. From this step, the hand 33 moves at the first speed VA1 and the first acceleration AA 1.
In the above-described operation example, when the substrate W placed on the shelf 22 belongs to the first substrate W1, the hand 33 enters between two shelves 22 adjacent to each other in the up-down direction Z at the first height position HA 1. When the substrate W placed on the shelf 22 belongs to the second substrate W2, the hand 33 enters between two adjacent shelves 22 in the up-down direction Z at the second height position HA 2. When the substrate W placed on the shelf 22 belongs to the third substrate W3, the hand 33 enters between two adjacent shelves 22 in the up-down direction Z at the third height position HA 3. When the substrate W placed on the shelf 22 is the normal-diameter substrate WN, the hand 33 enters the first insertion amount KA1 between two adjacent shelves 22 in the up-down direction Z, and then stops. When the substrate W placed on the shelf 22 is the large-diameter substrate WL, the hand 33 enters the second insertion amount KA2 between two adjacent shelves 22 in the up-down direction Z, and then stops.
Fig. 31A and 31B are diagrams showing a relationship between the substrate W placed on the shelf 22 and the insertion height HA of the hand 33. In fig. 31A, a first substrate W1 is mounted on a shelf 22. In fig. 31B, the second substrate W2 or the third substrate W3 is mounted on the shelf 22.
The first substrate W1 is deflected from the second substrate W2 and the third substrate W3. Specifically, the first substrate W1 is convexly curved downward. As described above, the first height position HA1 is lower than the second height position HA2 and the third height position HA 3. Therefore, the hand 33 does not interfere with the first substrate W1, and the hand 33 can enter between two adjacent shelves 22 in the vertical direction Z.
The second substrate W2 or the third substrate W3 is less deflected than the first substrate W1. As described above, the second height position HA2 and the third height position HA3 are both higher than the first height position HA 1. Therefore, the hand 33 does not interfere with the second substrate W2 or the third substrate W3, and the hand 33 can enter between the two shelves 22 adjacent to each other in the vertical direction Z.
An operation example of the transporting mechanism 4 for transporting the substrate W from the accommodating frame C to the mounting portion 6
The hand 33 moves from the housing frame C to the mounting portion 6 while the hand 33 supports the substrate W. Thereby, the transport mechanism 4 transports the substrate W from the housing rack C to the mounting portion 6. When the transport mechanism 4 transports the substrate W from the housing frame C to the mounting portion 6, the hand 33 moves at the first speed VA1 and the first acceleration AA 1.
An example of the operation of placing the substrate W on the shelf 45 of the mounting portion 6 by the transport mechanism 4
Fig. 32A to 32D schematically show an example of the operation of the conveyance mechanism 4 for placing the substrate W on the shelf 45 of the placement unit 6.
Refer to fig. 32A. The hand 33 supports the substrate W. The hand 33 moves to a position facing the placement unit 6. The hand 33 is adjusted to the height position HB determined by the control unit 9.
Refer to fig. 32B. The hand 33 moves backward. The hand 33 enters the placement unit 6. The hand 33 enters between two adjacent shelves 45 in the up-down direction Z at the height position HB determined by the control section 9. The hand 33 enters the insertion amount KB determined by the control unit 9 between two adjacent shelves 45 in the up-down direction Z, and then stops.
In the step up to this point, the hand 33 moves at the first speed VA1 and the first acceleration AA 1.
Refer to fig. 32C. The hand 33 moves downward. The hand 33 passes between a first shelf 46 and a second shelf 47 comprised by one shelf 45. Thus, the hand 33 places one substrate W on one shelf 45. The hand 33 is separated from the substrate W on the shelf 45.
As described above, the interval ET of the shelf 45 is larger than the diameter D of the substrate W. Thus, even if there is a deviation in the position of the substrate W transferred from the hand 33 to the shelf 45, the shelf 45 can properly receive the substrate W.
The substrate W is guided by the first inclined surface 51 and the second inclined surface 55 of the shelf 45. Thus, when the substrate W is placed on the shelf 45, the substrate W is positioned at a predetermined position. If there is a deviation in the position of the substrate W placed on the shelf 45 by the hand 33, the shelf 45 can adjust the position of the substrate W so that the deviation in the position of the substrate W becomes small.
Refer to fig. 32D. In a state where the hand 33 does not support the substrate W, the hand 33 moves forward and moves out of the mounting portion 6. From this step, the hand 33 moves at the second speed VA2 and the second acceleration AA 2.
In the above-described operation example, when the substrate W supported by the hand 33 belongs to the first substrate W1, the hand 33 enters between two adjacent shelves 45 in the up-down direction Z at the first height position HB 1. When the substrate W supported by the hand 33 belongs to the second substrate W2, the hand 33 enters between two adjacent shelves 45 in the up-down direction Z at the second height position HA 2. When the substrate W supported by the hand 33 belongs to the third substrate W3, the hand 33 enters between two adjacent shelves 45 in the up-down direction Z at the third height position HA 3. When the substrate W supported by the hand 33 is a normal-diameter substrate WN, the hand 33 enters a first insertion amount KB1 between two adjacent shelves 45 in the up-down direction Z, and then stops. When the substrate W supported by the hand 33 is a large-diameter substrate WL, the hand 33 enters the second insertion amount KB2 between two adjacent shelves 45 in the up-down direction Z, and then stops.
The operation of the transport mechanism 4 for removing the substrate W from the shelf 45 of the mounting portion 6 is substantially the same as the operation of the transport mechanism 4 for removing the substrate W from the shelf 22 of the accommodating rack C. The operation of the transport mechanism 4 for placing the substrate W on the shelf 22 of the accommodating rack C is substantially the same as the operation of the transport mechanism 4 for placing the substrate W on the shelf 45 of the mounting portion 6.
Operation example of carrying mechanism 8
Fig. 33 is a flowchart showing steps of controlling the control unit 9 and operating the conveyance mechanism 8.
Step S21
The control unit 9 determines the height position of the hand 33 when the hand 61 of the carrying mechanism 8 is inserted into the mounting unit 6. Specifically, the control unit 9 determines the height position of the hand 61 when the hand 61 of the conveying mechanism 8 is inserted between two adjacent shelves 45 in the up-down direction Z. Hereinafter, the height position of the hand 61 when the hand 61 of the conveying mechanism 8 is inserted between two adjacent shelves 45 in the up-down direction Z will be simply referred to as "height position HC". The control section 9 changes the height position HC according to the shape of the substrate W. The control unit 9 changes the height position HC according to at least one of the shape of the substrate W removed from the shelf 45 by the transport mechanism 8 and the shape of the substrate W placed on the shelf 45 by the transport mechanism 8.
Specifically, when the substrate W removed from the shelf 45 by the transport mechanism 8 or the substrate W placed on the shelf 45 by the transport mechanism 8 is the first substrate W1, the control unit 9 determines the height position HC as the first height position HC1. When the substrate W removed from the shelf 45 by the transport mechanism 8 or the substrate W placed on the shelf 45 by the transport mechanism 8 is the second substrate W2, the control unit 9 determines the height position HC as the second height position HC2. When the substrate W removed from the shelf 45 by the transport mechanism 8 or the substrate W placed on the shelf 45 by the transport mechanism 8 is the third substrate W3, the control unit 9 determines the height position HC as the third height position HC3. The second height position HC2 is higher than the first height position HC1. The third height position HC3 is higher than the first height position HC1. The third height position HC3 is the same as the second height position HC2.
Step S22
The control unit 9 determines the amount of insertion of the hand 61 when the hand 61 of the conveyance mechanism 8 is inserted between two adjacent shelves 45 in the up-down direction Z. The amount of insertion of the hand 61 between two adjacent shelves 45 in the up-down direction Z corresponds to the amount of movement of the hand 61 in the front-back direction X when the hand 61 of the conveying mechanism 8 is inserted between two adjacent shelves 45 in the up-down direction Z. Hereinafter, the insertion amount of the hand 61 inserted between two shelves 45 adjacent in the up-down direction Z will be abbreviated as "insertion amount KC". The control section 9 changes the insertion amount KC according to the shape of the substrate W. The control unit 9 changes the insertion amount KC according to at least one of the shape of the substrate W removed from the shelf 45 by the transport mechanism 8 and the shape of the substrate W placed on the shelf 45 by the transport mechanism 8.
When the substrate W removed from the shelf 45 by the transport mechanism 8 or the substrate W placed on the shelf 45 by the transport mechanism 8 is the normal diameter substrate WN, the control unit 9 determines the insertion amount KC as the first insertion amount KC1. When the substrate W removed from the shelf 45 by the transport mechanism 8 or the substrate W placed on the shelf 45 by the transport mechanism 8 is the large-diameter substrate WL, the control unit 9 determines the insertion amount KC as the second insertion amount KC2. The second insertion amount KC2 is larger than the first insertion amount KC1.
Step S23
The control unit 9 determines the flow rate of the gas supplied to the suction unit 68. Hereinafter, the flow rate of the gas supplied to the suction portion 68 will be simply referred to as "flow rate M". The control unit 9 changes the flow rate M according to the shape of the substrate W transported by the transport mechanism 8.
Specifically, the control unit 9 adjusts the flow rate M to the first flow rate M1 when the first substrate W1 is conveyed by the conveyance mechanism 8. When the transport mechanism 8 transports the second substrate W2, the control unit 9 adjusts the flow rate M to the second flow rate M2. When the third substrate W3 is transported by the transport mechanism 8, the control unit 9 adjusts the flow rate M to the third flow rate M3. The second flow rate M2 is greater than the first flow rate M1. The third flow rate M3 is greater than the first flow rate M1.
Step S24
The control section 9 determines the processing unit 7 that processes the substrate W. More specifically, the control unit 9 determines the processing unit 7 for processing the substrate W as one of the first processing unit 7A and the second processing unit 7B according to the shape of the substrate W.
Specifically, when the substrate W is the first substrate W1, the control unit 9 determines to process the substrate W in the first processing unit 7A. When the substrate W is the second substrate W2, the control section 9 determines to process the substrate W in the second processing unit 7B. When the substrate W is the third substrate W3, the control section 9 determines to process the substrate W in the second processing unit 7B.
Step S25
The control unit 9 determines the movement speed and acceleration of the hand 61 of the conveyance mechanism 8. Hereinafter, the moving speed of the hand 61 of the conveying mechanism 8 will be abbreviated as "moving speed VB". Hereinafter, the acceleration of the hand 61 of the conveying mechanism 8 will be abbreviated as "acceleration AB". The control unit 9 changes the moving speed VB according to whether or not the transport mechanism 8 supports the substrate W. The control unit 9 changes the acceleration AB depending on whether or not the transport mechanism 8 supports the substrate W.
When the control unit 9 determines the movement speed VB and the acceleration AB, the control unit 9 may appropriately refer to the detection result of the substrate detection unit 89.
Specifically, when the transport mechanism 8 supports the substrate W, the control unit 9 determines the movement speed VB to be the first speed VB1. When the transport mechanism 8 does not support the substrate W, the control unit 9 determines the movement speed VB as the second speed VB2. The second speed VB2 is greater than the first speed VB1. For example, the first speed VB1 is 50% or less of the second speed VB2.
When the transport mechanism 8 supports the substrate W, the control unit 9 determines the acceleration AB as the first acceleration AB1. When the substrate W is not supported by the transport mechanism 8, the control unit 9 determines the acceleration AB as the second acceleration AB2. The second acceleration AB2 is greater than the first acceleration AB1. For example, the first acceleration AB1 is 70% or less of the second acceleration AB2.
Step S26
The control unit 9 controls the conveyance mechanism 8 (specifically, the hand driving unit 62) by the determined height position HC, the insertion amount KC, the flow rate M, the processing unit 7, the movement speed VB, and the acceleration AB. The determined processing unit 7 is one of the first processing unit 7A and the second processing unit 7B. Specifically, the determined processing unit 7 is one determined in the first processing unit 7A and the second processing unit 7B.
Step S27
The hand driving unit 62 of the conveying mechanism 8 moves the hand 61 under the control of the control unit 9. Thereby, the conveyance mechanism 8 conveys the substrate W.
Specifically, the following operation examples will be described.
c1 Operation example of the transport mechanism 8 for removing the substrate W from the shelf 45 of the mounting portion 6
c2 Operation example of the conveyance mechanism 8 for conveying the substrate W from the mounting portion 6 to the processing unit 7
c3 Operation example of transferring the substrate W to the substrate holding portion 91 of the processing unit by the transport mechanism 8
c4 Operation example of the transfer mechanism 8 for removing the substrate W from the substrate holding portion 91 of the processing unit 7
c5 Operation example of transfer mechanism 8 for transferring substrate W to shelf 45 of mounting unit 6
An example of an operation of the transport mechanism 8 for removing the substrate W from the shelf 45 of the mounting portion 6
Fig. 34A to 34D and fig. 35A to 35D schematically show an example of the operation of the transport mechanism 8 to remove the substrate W from the shelf 45 of the mounting portion 6.
Refer to fig. 34A. The hand 61 does not hold the substrate W. The suction adjusting portion 73 does not supply the gas to the suction portion 68. The suction portion 68 does not blow out the gas. The suction portion 68 does not suck the substrate W. The second receiving portion 83 is located at the retracted position. The hand 61 moves to a position facing the placement unit 6. The hand 61 is adjusted to the height position HC determined by the control portion 9.
Refer to fig. 34B. The hand 61 moves forward. The hand 61 enters the placement unit 6. The hand 61 enters between two adjacent shelves 45 in the up-down direction Z at the height position HC determined by the control section 9. The hand 61 enters the insertion amount KC determined by the control section 9 between two adjacent shelves 45 in the up-down direction Z, and then stops. When the hand 61 is stopped, the first receiving portion 82 and the second receiving portion 83 do not overlap the substrate W placed on the shelf 45 in a plan view.
Refer to fig. 34C. The hand 61 moves downward. The first receiving portion 82 and the second receiving portion 83 pass through the side of the substrate W placed on one shelf 45. The first receiving portion 82 and the second receiving portion 83 move to a position lower than the substrate W placed on the shelf 45. The suction portion 68 is adjacent to the upper surface 17 of the substrate W.
Refer to fig. 34D. The hand 61 moves slightly in the horizontal direction. Thereby, the first receiving portion 82 moves to a position overlapping the substrate W placed on the shelf 45 in a plan view. The second receiving portion 83 is not overlapped with the substrate W placed on the shelf 45 in a plan view.
In the step up to this point, the hand 61 moves at the second speed VB2 and the second acceleration AB 2.
Refer to fig. 35A. The suction adjusting section 73 supplies the gas to the suction section 68 at the flow rate M determined by the control section 9. The suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. Thereby, the suction portion 68 sucks the substrate W upward. The substrate W floats upward. The substrate W is separated from the shelf 45. The upper surface 17 of the substrate W is in contact with the contact portion 74. Thus, the hand 61 removes one substrate W from the shelf 45. The hand 61 holds the substrate W.
Refer to fig. 35B. The hand 61 moves upward. From this step, the hand 61 moves at the first speed VB1 and the first acceleration AB 1.
Refer to fig. 35C. The receiving portion driving portion 86 moves the second receiving portion 83 from the retracted position to the drop-off preventing position. Thus, the first receiving portion 82 and the second receiving portion 83 overlap the substrate W sucked by the suction portion 68 in a plan view.
Therefore, if the substrate W is separated from the contact portion 74 and falls downward, the receiving portion 81 can catch the substrate W. That is, the hand 61 does not drop the substrate W.
Refer to fig. 35D. The hand 61 moves backward and moves out of the mounting portion 6 while the hand 61 holds the substrate W.
In the above-described operation example, when the substrate W placed on the shelf 45 belongs to the first substrate W1, the hand 61 enters between two adjacent shelves 45 in the up-down direction Z at the first height position HC 1. The suction adjusting unit 73 supplies the gas to the suction unit 68 at the first flow rate M1. When the substrate W placed on the shelf 45 belongs to the second substrate W2, the hand 61 enters between two adjacent shelves 45 in the up-down direction Z at the second height position HC 2. The suction adjusting unit 73 supplies the gas to the suction unit 68 at the second flow rate M2. When the substrate W placed on the shelf 45 belongs to the third substrate W3, the hand 61 enters between two adjacent shelves 45 in the up-down direction Z at the third height position HC 3. The suction adjusting unit 73 supplies the gas to the suction unit 68 at the third flow rate M3. When the substrate W placed on the shelf 45 is the normal-diameter substrate WN, the hand 61 enters the first insertion amount KC1 between two adjacent shelves 45 in the up-down direction Z, and then stops. When the substrate W placed on the shelf 45 is the large-diameter substrate WL, the hand 61 enters the second insertion amount KC2 between two adjacent shelves 45 in the up-down direction Z, and then stops.
The operation example of the transporting mechanism 8 for transporting the substrate W from the mounting portion 6 to the processing unit 7
The hand 61 holds the substrate W. Specifically, the suction adjusting unit 73 supplies the gas to the suction unit 68 at the flow rate M determined by the control unit 9. When the substrate W held by the hand 61 is the first substrate W1, the suction adjusting portion 73 supplies the gas to the suction portion 68 at the first flow rate M1. When the substrate W held by the hand 61 is the second substrate W2 or the third substrate W3, the suction adjusting portion 73 supplies the gas to the suction portion 68 at the second flow rate M2. The suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. The suction portion 68 sucks the substrate W.
The second receiving portion 83 is located at the fall-off preventing position. The first receiving portion 82 and the second receiving portion 83 overlap the substrate W sucked by the suction portion 68 in a plan view.
The hand 61 moves from the mounting portion 6 to the processing unit 7 specified by the control portion 9. Thereby, the conveyance mechanism 8 conveys the substrate W to the processing unit 7 specified by the control unit 9. When the substrate W held by the hand 61 is the first substrate W1, the conveyance mechanism 8 conveys the substrate W to the first processing unit 7A. When the substrate W held by the hand 61 is the second substrate W2 or the third substrate W3, the conveyance mechanism 8 conveys the substrate W to the second processing unit 7B.
When the transport mechanism 8 transports the substrate W from the mounting portion 6 to the processing unit 7, the hand 61 moves at the first speed VB1 and the first acceleration AA 1.
The transport mechanism 8 transfers the operation example of the substrate W to the substrate holding portion 91 of the processing unit 7
Fig. 36A to 36F schematically show an example of the operation of the conveyance mechanism 8 for transferring the substrate W to the substrate holding portion 91 of the processing unit 7. The conveyance mechanism 8 transfers the substrate W to the substrate holding portion 91 in the same manner regardless of whether the substrate holding portion 91 is the first substrate holding portion 91A or the second substrate holding portion 91B.
Refer to fig. 36A. The hand 61 holds the substrate W. Specifically, the suction adjusting unit 73 supplies the gas to the suction unit 68 at the flow rate M determined by the control unit 9. The suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. The suction portion 68 sucks the substrate W.
The second receiving portion 83 is located at the fall-off preventing position. The hand 61 enters the interior of the processing unit 7. The hand 61 is located above the substrate holding portion 91. The lift pin 116 is in the upper position.
Refer to fig. 36B. The suction adjusting section 73 stops the supply of the gas to the suction section 68. The suction portion 68 stops suction of the substrate W. The substrate W falls downward. The receiving portion 81 receives the substrate W. More specifically, the first receiving portion 82 and the second receiving portion 83 receive the lower surface 16 of the substrate W. In this way, the suction portion 68 stops the suction of the substrate W, and the substrate W is placed on the first receiving portion 82 and the second receiving portion 83.
Refer to fig. 36C. The hand 61 moves slightly downward. Thereby, the first receiving portion 82 and the second receiving portion 83 transfer the substrate W to the lift pins 116. The lift pins 116 receive the substrate W from the receiving portion 81. The lift pins 116 receive the substrate W at the upper position. The lift pins 116 support the substrate W at an upper position. The first receiving portion 82 and the second receiving portion 83 move to a position lower than the substrate W supported by the lift pins 116. The first receiving portion 82 and the second receiving portion 83 are separated from the substrate W supported by the lift pins 116.
In the step up to this point, the hand 61 moves at the first speed VB1 and the first acceleration AB 1.
Refer to fig. 36D. The receiving portion driving portion 86 moves the second receiving portion 83 from the drop-off preventing position to the retracted position. Thereby, the second receiving portion 83 moves to a position where it does not overlap the substrate W supported by the lift pins 116 in a plan view. The first receiving portion 82 is in a state of overlapping the substrate W supported by the lift pins 116 in a plan view.
Refer to fig. 36E. The hand 61 moves slightly in the horizontal direction. Thus, the first receiving portion 82 and the second receiving portion 83 are moved to positions that do not overlap the substrate W supported by the lift pins 116 in a plan view. From this step, the hand 61 moves at the second speed VB2 and the second acceleration AB 2.
Refer to fig. 36F. The hand 61 moves upward. The first receiving portion 82 and the second receiving portion 83 move to a position higher than the substrate W supported by the lift pins 116 by the side of the substrate W supported by the lift pins 116.
Although not shown, the hand 61 is moved out of the processing unit 7 at a position above the substrate holding portion 91 in a state where the hand 61 is not holding the substrate W.
An example of an operation of the transport mechanism 8 for removing the substrate W from the substrate holding portion 91 of the processing unit 7
Fig. 37A to 37F schematically show an example of the operation of the transport mechanism 8 to remove the substrate W from the substrate holding portion 91 of the processing unit 7. The conveyance mechanism 8 also performs the same operation of removing the substrate W from the substrate holding portion 91, regardless of whether the substrate holding portion 91 is the first substrate holding portion 91A or the second substrate holding portion 91B.
Refer to fig. 37A. The hand 61 does not hold the substrate W. The suction adjusting portion 73 does not supply the gas to the suction portion 68. The suction portion 68 does not flow the gas along the upper surface 17 of the substrate W. The suction portion 68 does not suck the substrate W. The second receiving portion 83 is located at the retracted position. The hand 61 enters the interior of the processing unit 7. The hand 61 is located above the substrate holding portion 91. The lift pins 116 support the substrate W at an upper position. The first receiving portion 82 and the second receiving portion 83 do not overlap the substrate W supported by the lift pins 116 in a plan view.
Refer to fig. 37B. The hand 61 moves slightly downward. The first receiving portion 82 and the second receiving portion 83 pass laterally of the substrate W supported by the lift pins 116. The first receiving portion 82 and the second receiving portion 83 move to a position lower than the substrate W supported by the lift pins 116. The suction portion 68 is adjacent to the upper surface 17 of the substrate W.
Refer to fig. 37C. The hand 61 moves slightly in the horizontal direction. Thereby, the first receiving portion 82 moves to a position overlapping the substrate W supported by the lift pins 116 in a plan view. The second receiving portion 83 is not overlapped with the substrate W supported by the lift pins 116 in a plan view.
Refer to fig. 37D. The receiving portion driving portion 86 moves the second receiving portion 83 from the retracted position to the drop-off preventing position. Thus, the second receiving portion 83 and the first receiving portion 82 overlap the substrate W sucked by the suction portion 68 in a plan view.
In the step up to this point, the hand 61 moves at the second speed VB2 and the second acceleration AB 2.
Refer to fig. 37E. The suction adjusting section 73 supplies the gas to the suction section 68 at the flow rate M determined by the control section 9. The suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. Thereby, the suction portion 68 sucks the substrate W upward. The substrate W floats upward. The substrate W is separated from the lift pins 116. The upper surface 17 of the substrate W is in contact with the contact portion 74. Thus, the hand 61 removes one substrate W from the lift pins 116. The hand 61 holds the substrate W.
Refer to fig. 37F. The hand 61 moves upward while the hand 61 holds the substrate W.
From this step, the hand 61 moves at the first speed VB1 and the first acceleration AB 1.
Although not shown, the hand 61 is removed to the outside of the processing unit 7 at a position above the substrate holding portion 91 while the hand 61 holds the substrate W.
An example of an operation of transferring the substrate W to the shelf 45 of the mounting portion 6 by the transport mechanism 8
Fig. 38A to 38D and fig. 39A to 39D are diagrams schematically showing an example of the operation of the conveyance mechanism 8 for placing the substrate W on the shelf 45 of the placement unit 6.
Refer to fig. 38A. The hand 61 holds the substrate W. The suction adjusting section 73 supplies the gas to the suction section 68 at the flow rate M determined by the control section 9. The suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. The suction portion 68 sucks the substrate W. The second receiving portion 83 is located at the fall-off preventing position. The hand 61 moves to a position facing the placement unit 6. The hand 61 is adjusted to the height position HC determined by the control portion 9.
Refer to fig. 38B. The hand 61 moves forward. The hand 61 enters the placement unit 6. The hand 61 enters between two adjacent shelves 45 in the up-down direction Z at the height position HC determined by the control section 9. The hand 61 enters the insertion amount KC determined by the control section 9 between two adjacent shelves 45 in the up-down direction Z, and then stops.
Refer to fig. 38C. The suction adjusting section 73 stops the supply of the gas to the suction section 68. The suction portion 68 stops suction of the substrate W. The substrate W falls downward. The receiving portion 81 receives the substrate W. More specifically, the first receiving portion 82 and the second receiving portion 83 receive the lower surface 16 of the substrate W. In this way, the suction portion 68 stops the suction of the substrate W, and the substrate W is placed on the first receiving portion 82 and the second receiving portion 83.
Refer to fig. 38D. The hand 61 moves slightly downward. Thereby, the first receiving portion 82 and the second receiving portion 83 transfer the substrate W to the shelf 45. The shelf 45 receives the substrate W from the receiving portion 81. The shelf 45 supports the substrate W. The first receiving portion 82 and the second receiving portion 83 move to a position lower than the substrate W supported by the shelf 45. The first receiving portion 82 and the second receiving portion 83 are separated from the substrate W supported by the shelf 45.
In the step up to this point, the hand 61 moves at the first speed VB1 and the first acceleration AB 1.
Refer to fig. 39A. The receiving portion driving portion 86 moves the second receiving portion 83 from the drop-off preventing position to the retracted position. Thereby, the second receiving portion 83 moves to a position not overlapping the substrate W supported by the shelf 45 in a plan view. The first receiving portion 82 is in a state of overlapping the substrate W supported by the shelf 45 in a plan view.
Refer to fig. 39B. The hand 61 moves slightly in the horizontal direction. Thus, the first receiving portion 82 and the second receiving portion 83 do not overlap the substrate W supported by the shelf 45 in a plan view. From this step, the hand 61 moves at the second speed VB2 and the second acceleration AB 2.
Refer to fig. 39C. The hand 61 moves upward. The first receiving portion 82 and the second receiving portion 83 move to a position higher than the substrate W supported by the shelf 45 by the side of the substrate W supported by the shelf 45.
Refer to fig. 39D. In a state where the hand 61 does not hold the substrate W, the hand 61 is retracted and moved out of the mounting portion 6.
< operation example of the first processing unit 7A >
Fig. 40 is a flowchart showing steps of an example of the operation of the first processing unit 7A. Fig. 41 is a timing chart showing an example of the operation of the first processing unit 7A. T31 shown in fig. 41 corresponds to the time when step S31 shown in fig. 40 is executed. Similarly, t32 to t35, t37 to t39, and t41 to t44 shown in fig. 41 correspond to the timings of executing steps S32 to S35, S37 to S39, and S41 to S44 shown in fig. 40, respectively. The operations of the respective components described below are controlled by the control unit 9. Some of the operation examples described below are repeated with the description of the operation examples of the conveyance mechanism 8 described above.
Step S31 (time t 31): the lifting pin 116 is lifted.
The lift pin 116 moves to an upward position.
Step S32 (time t 32): the lift pins 116 receive the substrate W from the conveyance mechanism 8.
The transport mechanism 8 transfers the substrate W to the lift pins 116. More specifically, the conveyance mechanism 8 transfers one first substrate W1 to the lift pins 116. The lift pins 116 receive the substrate W from the conveyance mechanism 8. The lift pins 116 support the substrate W at an upper position. The substrate W is positioned above the fixing pins 103. The substrate W is not in contact with the fixing pins 103.
Step S33 (time t 33): the first blowout port 105 starts blowout of the gas.
The first blowout preventer 111 starts to supply gas to the first blowout port 105. The first blowout port 105 starts blowout of the gas. The first blowout port 105 blows the gas upward. The second blowout preventer 112 has not started to supply the gas to the second blowout port 106. The second blowout port 106 does not blow out the gas.
Step S34 (time t 34): the lift pins 116 transfer the substrate W to the fixing pins 103.
The lift pin 116 moves from the upper position to the lower position. Thereby, the lift pins 116 lower the substrate W from a position higher than the fixing pins 103. The lift pins 116 transfer the substrate W to the fixing pins 103. The fixing pins 103 receive the substrate W from the lift pins 116. The fixing pins 103 support the substrate W. The lift pins 116 are separated from the substrate W supported by the fixing pins 103.
Step S35 (time t 35): the position adjusting pin 113 adjusts the position of the substrate W.
The position adjustment pin 113 moves from the retracted position to the adjustment position. Thereby, the position adjustment pins 113 contact the substrate W supported by the fixing pins 103. The position adjusting pin 113 adjusts the position of the substrate W in the horizontal direction.
Step S36: the position of the substrate W is checked.
It is checked whether the position of the substrate W is at a predetermined position. Specifically, the substrate detection unit 127 inspects the substrate W. The substrate detection unit 127 outputs the detection result of the substrate detection unit 127 to the control unit 9. The control unit 9 determines whether the substrate W is at a predetermined position. When the control unit 9 determines that the substrate W is at the predetermined position, the process advances to step S37. If the control unit 9 determines that the substrate W is not at the predetermined position, the routine proceeds to step S37, where the abnormality processing is executed. The exception handling includes, for example, returning to step S35. Exception handling includes, for example, notifying a user that an exception occurred.
Step S37 (time t 37): the second blowout port 106 starts blowout of the gas.
The second blowout preventer 112 starts to supply the gas to the second blowout port 106. The second blowout port 106 starts blowout of the gas. The second blowout port 106 blows the gas upward. The flow rate of the gas blown out from the second outlet 106 is larger than the flow rate of the gas blown out from the first outlet 105.
Step S38 (time t 38): the position adjustment pin 113 is separated from the substrate W.
The position adjustment pin 113 moves from the adjustment position to the retracted position. Thereby, the position adjustment pins 113 are separated from the substrate W.
Step S39 (time t 39): the substrate W is processed (a processing liquid is supplied to the substrate W).
The first rotation driving section 92A rotates the first substrate holding section 91A and the substrate W. The processing liquid supply unit 121 supplies the processing liquid to the substrate W supported by the fixing pins 103. When the processing liquid supply section 121 supplies the processing liquid to the substrate W, the first outlet 105 blows out the gas, and the second outlet 106 blows out the gas at a flow rate larger than that of the first outlet 105.
When a predetermined time elapses, the processing of the substrate is terminated. Then, the process advances to step S40.
Step S40: the position of the substrate W is checked.
It is checked again whether the position of the substrate W is at a predetermined position. This step S40 is substantially the same as step S36.
Step S41 (time t 41): the second blowout port 106 stops the blowout of the gas.
The second blowout preventer 112 stops supplying the gas to the second blowout port 106. The second blowout port 106 stops the blowout of the gas.
Step S42 (time t 42): the lift pins 116 remove the substrate W from the fixing pins 103.
The lift pin 116 moves from the lower position to the upper position. Thereby, the lift pins 116 remove the substrate W from the fixing pins 103. The lift pins 116 support the substrate W. The lift pins 116 raise the substrate W. Specifically, the lift pins 116 raise the substrate W to a position higher than the fixing pins 103. The substrate W is separated from the fixing pins 103. The lift pins 116 support the substrate W at an upper position. The substrate W is supported at a position higher than the fixing pins 103.
Step S43 (time t 43): the first blowout port 105 stops the blowout of the gas.
The first blowout control unit stops supplying the gas to the first blowout port 105. The first blowout port 105 stops the blowout of the gas.
Step S44 (time t 44): the lift pins 116 transfer the substrate W to the transport mechanism 8.
The transport mechanism 8 removes the substrate W from the lift pins 116. Then, the conveyance mechanism 8 conveys the substrate W to the outside of the first processing unit 7A.
< operation example of the second processing unit 7B >)
The operation example of the second processing unit 7B is similar to that of the first processing unit 7A, omitting steps S33, S35-S38, S40-S41. An example of the operation of the second processing unit 7B will be briefly described.
The lift pin 116 moves to an upward position. The lift pins 116 receive one substrate W (specifically, the second substrate W2 or the third substrate W3) from the conveyance mechanism 8. The lift pins 116 transfer the substrate W to the lower surface contact pins 135. The lower surface contact pins 135 support the substrate W. The edge contact pins 133 contact the edge 20 of the substrate W supported by the lower surface contact pins 135. Thereby, the edge contact pins 133 hold the substrate W.
The substrate W is processed in a state where the substrate W is held by the edge contact pins 133. Specifically, the second rotation driving unit 92B rotates the second substrate holding unit 91B and the substrate W. When the second substrate holding portion 91B is rotated by the second rotation driving portion 92B, the edge contact pins 133 hold the edge 20 of the substrate W so that the substrate W does not slide with respect to the edge contact pins 133. The processing liquid supply unit 121 supplies the processing liquid to the substrate W held by the edge contact pins 133.
When the process on the substrate W is completed, the edge contact pins 133 are separated from the substrate W. The lift pins 116 remove the substrate W from the lower surface contact pins 135. The transport mechanism 8 removes the substrate W from the lift pins 116.
Effect of the embodiments >
The substrate processing apparatus 1 includes a processing unit 7 for processing a substrate W. The processing unit has a first processing unit 7A and a second processing unit 7B.
The first processing unit 7A has a first substrate holding portion 91A that holds the substrate W and a first rotation driving portion 92A that rotates the first substrate holding portion 91A. The first substrate holding portion 91A includes a first plate 101, a fixing pin 103, and a gas outlet 104. The fixing pin 103 protrudes upward from the upper surface 102 of the first plate 101. The fixing pin 103 contacts the lower surface 16 of the substrate W. The fixing pins 103 place the substrate W at a position higher than the upper surface 102 of the first plate 101. The gas outlet 104 is formed in the upper surface 102 of the first plate 101. The gas outlet 104 blows out gas between the upper surface 102 of the first plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103. The gas outlet 104 sucks the substrate W downward. Thus, even with a relatively thin substrate W, the first substrate holding portion 91A can appropriately hold the substrate W. Therefore, even with a relatively thin substrate W, the first processing unit 7A can appropriately process the substrate W.
The second processing unit 7B has a second substrate holding portion 91B that holds the substrate W and a second rotation driving portion 92B that rotates the second substrate holding portion 91B. The second substrate holding portion 91B has a second plate 131 and edge contact pins 133. The edge contact pin 133 is mounted to the second plate 131. The edge contact pins 133 contact the edge 20 of the substrate W when the second substrate holding portion 91B is rotated by the second rotation driving portion 92B. Thus, even with a relatively thick substrate W, the second substrate holding portion 91B can appropriately hold the substrate W. Therefore, even with a relatively thick substrate W, the second processing unit 7B can appropriately process the substrate W.
The substrate processing apparatus 1 includes a conveyance mechanism 8 for conveying a substrate W to the processing unit 7, and a control unit 9 for controlling the conveyance mechanism 8. The control unit 9 determines the processing unit 7 that processes the substrate W as either one of the first processing unit 7A and the second processing unit 7B. The control unit 9 conveys the substrate W to the specified processing unit by the conveyance mechanism 8. Thus, the first processing unit 7A and the second processing unit 7B can appropriately process the substrate W, respectively. Therefore, the substrate processing apparatus 1 can appropriately process the substrate W regardless of the shape of the substrate W.
As described above, according to the substrate processing apparatus 1, the substrate W can be appropriately processed.
When the second substrate holding portion 91B is rotated by the second rotation driving portion 92B, the edge contact pins 133 hold the edge 20 of the substrate W so that the substrate W does not slide with respect to the edge contact pins 133.
Thereby, even when the second substrate holding portion 91B rotates, the second substrate holding portion 91B can appropriately hold the substrate W. Thereby, the second processing unit 7B can appropriately process the substrate W.
The control section 9 determines the processing unit 7 that processes the substrate W as either one of the first processing unit 7A and the second processing unit 7B, according to the thickness of the main section 13 of the substrate W. Thus, the substrate processing apparatus 1 can appropriately process the substrate W regardless of the thickness of the main portion 13 of the substrate W.
The substrate W includes a first substrate W1 and a second substrate W2. The control section 9 determines the process unit 7 that processes the first substrate W1 as the first process unit 7A. The control unit 9 conveys the first substrate W1 to the first processing unit 7A. The control section 9 determines the process unit 7 that processes the second substrate W2 as a second process unit 7B. The control unit 9 conveys the second substrate W2 to the second processing unit. Thus, the substrate processing apparatus 1 can appropriately process any one of the first substrate W1 and the second substrate W2.
The substrate W includes a first substrate W1 and a third substrate W3. The control section 9 determines the process unit 7 that processes the first substrate W1 as the first process unit 7A. The control unit 9 conveys the first substrate W1 to the first processing unit 7A. The control section 9 determines the process unit 7 that processes the third substrate W3 as the second process unit 7B. The control unit 9 conveys the third substrate W3 to the second processing unit 7B. Thus, the substrate processing apparatus 1 can appropriately process any one of the first substrate W1 and the third substrate W3.
The present invention is not limited to the embodiment, and can be implemented in the following modifications.
In the above embodiment, the shelf 22 is in contact with the lower surface 16 of the substrate W. However, the present invention is not limited thereto. For example, the shelf 22 may be in contact with at least one of the lower surface 16 of the substrate W and the edge 20 of the substrate W. For example, the shelf 22 may be in contact with the edge 20 of the substrate W from obliquely below.
In the above embodiment, the hand 33 is in contact with the lower surface 16 of the substrate W. However, the present invention is not limited thereto. For example, the hand 33 may be in contact with at least one of the lower surface 16 of the substrate W and the edge 20 of the substrate W. For example, the hand 33 may contact the edge 20 of the substrate W from obliquely below.
In the above embodiment, the shelf 45 is in contact with the lower surface 16 of the substrate W. However, the present invention is not limited thereto. For example, the shelf 45 may be in contact with at least one of the lower surface 16 of the substrate W and the edge 20 of the substrate W. For example, the shelf 45 may be in contact with the edge 20 of the substrate W from obliquely below.
In the above embodiment, the contact portion 74 is in contact with the upper surface 17 of the substrate W. However, the present invention is not limited thereto. For example, the contact portion 74 may be in contact with at least one of the upper surface 17 of the substrate W and the edge 20 of the substrate W. For example, the contact portion 74 may contact the edge 20 of the substrate W from obliquely above.
In the above embodiment, the first receiving portion 82 can receive the lower surface 16 of the substrate W. However, the present invention is not limited thereto. For example, the first receiving portion 82 may receive at least one of the lower surface 16 of the substrate W and the edge 20 of the substrate W. For example, the first receiving portion 82 may receive the edge 20 of the substrate W from obliquely below.
In the above embodiment, the second receiving portion 83 is capable of receiving the lower surface 16 of the substrate W. However, the present invention is not limited thereto. For example, the second receiving portion 83 may receive at least one of the lower surface 16 of the substrate W and the edge 20 of the substrate W. For example, the second receiving portion 83 may receive the edge 20 of the substrate W from obliquely below.
In the above embodiment, the fixing pin 103 is in contact with the lower surface 16 of the substrate W. However, the present invention is not limited thereto. For example, the fixing pin 103 may be in contact with at least one of the lower surface 16 of the substrate W and the edge 20 of the substrate W. For example, the fixing pins 103 may contact the edge 20 of the substrate W from obliquely below.
In the above embodiment, the first receiving portion 82 is fixed to the base portion 65. However, the present invention is not limited thereto. That is, the first receiving portion 82 may be movable with respect to the base portion 65. In the present modified embodiment, the hand 61 may further include a driving portion (second receiving portion driving portion) for moving the first receiving portion 82 with respect to the base portion 65.
In the above embodiment, the suction portion 68 causes the gas to flow along the upper surface 17 of the substrate W. The suction portion 68 sucks the substrate W upward. However, the present invention is not limited thereto. The suction portion 68 may flow the gas along the lower surface 16 of the substrate W. The suction portion 68 may suck the substrate W downward.
In the above embodiment, the hand 33 of the conveying mechanism 4 has no suction portion. However, the present invention is not limited thereto. The hand 33 of the transport mechanism 4 may have a suction portion for flowing the gas along the first surface of the substrate W. Here, the first surface is any one of the upper surface and the lower surface of the substrate W. The hand 33 of the transport mechanism 4 may have a suction portion for sucking the substrate W. The transport mechanism 4 may have a receiving portion for preventing the substrate W from falling off from the hand 33.
In the case where the hand 33 of the carrying mechanism 4 has a suction portion, the carrying mechanism 4 is an example of the first carrying mechanism in the present invention. The housing rack C is an example of one of the first position and the second position in the present invention. The placement unit 6 is an example of the other of the first position and the second position in the present invention.
In the above embodiment, the control section 9 changes the height positions HA, HB, HC according to which of the first substrate W1, the second substrate W2, and the third substrate W3 the substrate W is. However, the present invention is not limited thereto. For example, the control unit 9 may change the height positions HA, HB, HC according to the thickness of the main portion 13 of the substrate W. For example, the control unit 9 may increase the height positions HA, HB, HC as the thickness of the main portion 13 of the substrate W increases.
In the above embodiment, the control unit 9 determines the processing unit 7 that processes the substrate W as one of the first processing unit and the second processing unit, depending on which of the first substrate W1, the second substrate W2, and the third substrate W3 the substrate W is. However, the present invention is not limited thereto. For example, the control unit 9 may determine the processing unit 7 for processing the substrate W as either one of the first processing unit and the second processing unit, based on the thickness of the main portion 13 of the substrate W. For example, the control unit 9 may convey the substrate W having the first thickness in the main portion 13 of the substrate W to the first processing unit 7A. For example, the control unit 9 may convey the substrate W having the second thickness larger than the first thickness in the main portion 13 of the substrate W to the second processing unit 7B. For example, the control unit 9 may process the substrate W having the first thickness in the main portion 13 of the substrate W in the first processing unit 7A. The control unit 9 may process the substrate W having the second thickness larger than the first thickness in the main portion 13 of the substrate W in the second processing unit 7B.
In the above embodiment, the control section 9 changes the flow rate M according to which of the first substrate W1, the second substrate W2, and the third substrate W3 the substrate W is. However, the present invention is not limited thereto. For example, the control unit 9 may change the flow rate M according to the thickness of the main portion 13 of the substrate W. For example, the control unit 9 may increase the flow rate M as the thickness of the main portion 13 of the substrate W increases.
In the above embodiment, the movement speed VA may be further reduced. For example, the moving speed VA may be classified into a horizontal moving speed VAH, a vertical moving speed VAZ, and a rotational speed VAR. Here, the horizontal movement speed VAH is a movement speed of the hand 33 in the horizontal direction. The vertical movement speed VAZ is the movement speed of the hand 33 in the up-down direction Z. The rotational speed VAR is a movement speed of the hand 33 rotating around the rotation axis A1. In step S13, the control unit 9 may determine the horizontal movement speed VAH, the vertical movement speed VAZ, and the rotational speed VAR, respectively.
In the above embodiment, the acceleration AA may be further subdivided. For example, the acceleration AA may be classified into a horizontal acceleration AAH, a vertical acceleration AAZ, and a rotational acceleration AAR. Here, the horizontal acceleration AAH is acceleration of the hand 33 in the horizontal direction. The vertical acceleration AAZ is the acceleration of the hand 33 in the up-down direction Z. The rotational acceleration AAR is an acceleration of the hand 33 rotating around the rotation axis A1. In step S13, the control unit 9 may determine the horizontal acceleration AAH, the vertical acceleration AAZ, and the rotational acceleration AAR, respectively.
In the above embodiment, the movement speed VB may be further subdivided. For example, the movement speed VB may be classified into a horizontal movement speed VBH, a vertical movement speed VBZ, and a rotational speed VBR. Here, the horizontal movement speed VBH is the movement speed of the hand 61 in the horizontal direction. The vertical movement speed VBZ is the movement speed of the hand 61 in the up-down direction Z. The rotation speed VBR is a movement speed of the hand 61 rotating around the rotation axis A2. In step S25, the control unit 9 may determine the horizontal movement speed VBH, the vertical movement speed VBZ, and the rotational speed VBR, respectively.
In the above embodiment, the acceleration AB may be further subdivided. For example, the acceleration AB may be divided into a horizontal acceleration ABH, a vertical acceleration ABZ, and a rotational acceleration ABR. Here, the horizontal acceleration ABH is the acceleration of the hand 61 in the horizontal direction. The vertical acceleration ABZ is the acceleration of the hand 61 in the up-down direction Z. The rotational acceleration ABR is an acceleration of the hand 61 rotating about the rotation axis A2. In step S25, the control unit 9 may determine the horizontal acceleration ABH, the vertical acceleration ABZ, and the rotational acceleration ABR, respectively.
In the above embodiment, the number of the first outlets 105 formed in the first plate 101 is one. However, the present invention is not limited thereto. The number of the first outlets 105 formed in the first plate 101 may be plural.
In the above embodiment, the lift pins 116 receive the substrate W from the transport mechanism 8 (step S32), and then the first outlet 105 starts the blowing of the gas (step S33). However, the present invention is not limited thereto. For example, the first gas outlet 105 may start blowing out the gas before the lift pins 116 receive the substrate W from the transport mechanism 8. According to the present modified embodiment, the lift pins 116 can receive the substrate W from the transport mechanism 8 in a state where the first outlet 105 blows out the gas.
In the above embodiment, the blowing of the gas is stopped at the first blowing port 105 (step S43), and then the lift pins 116 transfer the substrate W to the transport mechanism 8 (step S44). However, the present invention is not limited thereto. For example, the first outlet 105 may stop blowing out the gas after the lift pins 116 transfer the substrate W to the transport mechanism 8. According to the present modified embodiment, the lift pins 116 can transfer the substrate W to the transport mechanism 8 in a state where the first outlet 105 blows out the gas.
In the present modified embodiment, the flow rate of the gas blown out from the first blowing port 105 is preferably smaller than the flow rate of the gas supplied to the suction portion 68 of the conveying mechanism 8. In this way, the suction portion 68 can easily suck the substrate W when the transport mechanism 8 removes the substrate W from the lift pins 116. In other words, when the transport mechanism 8 removes the substrate W from the lift pins 116, the hand 61 easily holds the substrate W.
In the above embodiment, the lift pins 116 receive the substrate W from the conveyance mechanism 8. However, the present invention is not limited thereto. The fixing pins 103 may receive the substrate W from the conveyance mechanism 8. In other words, the conveyance mechanism 8 may directly transfer the substrate W to the fixing pins 103 without via the lift pins 116.
In the above embodiment, the lift pins 116 transfer the substrate W to the transport mechanism 8. However, the present invention is not limited thereto. The fixing pins 103 may transfer the substrate W to the conveyance mechanism 8. In other words, the conveyance mechanism 8 may directly remove the substrate W from the fixing pins 103 without via the lift pins 116.
In the above-described embodiment, the first outlet 105 of the first processing unit 7A may discharge pure water in addition to the gas.
Fig. 42 is a diagram schematically showing the structure of the first processing unit 141 in the modified embodiment. The same components as those of the first processing unit 7A of the embodiment are given the same reference numerals, and detailed description thereof is omitted.
The first processing unit 141 in the modified embodiment has a pure water supply section 142. The pure water supply portion 142 discharges pure water toward the substrate W through the first outlet 105.
The pure water supply unit 142 has a pipe 143. The pipe 143 supplies pure water to the first outlet 105. The pipe 143 has a first end and a second end. A first end of the pipe 143 is connected to the pure water supply source 144. A second end of the pipe 143 is connected to the first outlet 105.
The first processing unit 141 has a flow rate adjusting section 145. The flow rate adjusting unit 145 is provided in the pipe 143. The flow rate adjusting unit 145 adjusts the flow rate of the pure water supplied from the pure water supply unit 142 to the substrate W. That is, the flow rate adjusting unit 145 adjusts the flow rate of the pure water discharged from the first outlet 105. The flow rate adjusting unit 145 is controlled by the control unit 9.
The first outlet 105 may discharge the gas and the pure water at the same time. Alternatively, the first outlet 105 may discharge pure water without blowing out gas. In this way, the pure water discharged from the first outlet 105 contacts the lower surface 16 in the central portion of the substrate W, and the lower surface 16 in the central portion of the substrate W can be further suitably prevented from being bent downward. Thereby, the substrate W can be further suitably prevented from contacting the upper surface 102 of the first plate 101.
When the processing liquid is supplied to the substrate W (step S39), the first purge port 105 may simultaneously purge the gas and the pure water. Alternatively, when the processing liquid is supplied to the substrate W (step S39), the first outlet 105 may discharge pure water without blowing out the gas. In this way, when the processing liquid supply unit 121 supplies the processing liquid to the substrate W, the substrate W can be further appropriately prevented from coming into contact with the upper surface 102 of the first plate 101.
In the present modified embodiment, it is preferable that the space between the upper surface 102 of the first plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103 is not filled with pure water (liquid-tightness is not formed). This is to cause a proper attractive force to act on the substrate W supported by the pins 103 in order to cause the gas to flow in the space between the upper surface 102 of the first plate 101 and the lower surface 16 of the substrate W supported by the pins 103.
In the above embodiment, the first outlet 105 may discharge the processing liquid in addition to the gas. The processing liquid supply unit 121 may discharge the processing liquid toward the substrate W through the first discharge port 105.
Fig. 43 is a diagram schematically showing the structure of the first processing unit 151 in the modified embodiment. The same components as those of the first processing unit 7A of the embodiment are given the same reference numerals, and detailed description thereof is omitted.
The treatment liquid supply unit 121 includes a pipe 153. The pipe 153 supplies the treatment liquid to the first outlet 105. The piping 153 has a first end and a second end. The first end of the pipe 153 is connected to a treatment liquid supply source 154. A second end of the pipe 153 is connected to the first outlet 105.
The first processing unit 141 has a flow rate adjusting section 155. The flow rate adjusting unit 155 is provided in the pipe 153. The flow rate adjusting unit 155 adjusts the flow rate of the processing liquid supplied to the substrate W by the processing liquid supply unit 121. More specifically, the flow rate adjusting unit 155 adjusts the flow rate of the processing liquid discharged from the first outlet 105. The flow rate adjusting unit 155 is controlled by the control unit 9.
When the processing liquid is supplied to the substrate W (step S39), the first purge port 105 may simultaneously purge the gas and the processing liquid. In this way, the processing liquid can be supplied to the lower surface 16 of the substrate W. Thereby, the lower surface 16 of the substrate W can be properly processed.
In the present modified embodiment, it is preferable that the space between the upper surface 102 of the first plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103 is not filled with the process water (liquid-tightness is not formed). This is to apply an appropriate attractive force to the substrate W supported by the fixing pins 103.
In the above embodiment, the control unit 9 obtains the shape of the substrate W based on the detection result of the barcode reader 31. However, the present invention is not limited thereto. As modified embodiments in which the control unit 9 acquires the shape of the substrate W, four examples are illustrated below.
First example
The substrate processing apparatus 1 may further include a substrate information detecting unit that reads substrate information attached to the substrate W. The control unit 9 may determine the shape of the substrate W based on the detection result of the substrate information detection unit. Here, the substrate information attached to the substrate W is, for example, an identification code printed on the substrate W. The substrate information detecting unit is, for example, a reader.
Second example
The substrate processing apparatus 1 may have an imaging unit that images the substrate W. The control unit 9 may determine the shape of the substrate W based on the detection result of the imaging unit. The imaging unit is, for example, a one-dimensional image sensor or a two-dimensional image sensor.
Third example
The control unit 9 may acquire information on the shape of the substrate W from an external device of the substrate processing apparatus 1. The external device of the substrate processing apparatus 1 is, for example, a host computer. The control unit 9 may transmit the detection result of the barcode reader 31 to the external device, for example, before the control unit 9 acquires information on the shape of the substrate W from the external device. The control unit 9 may transmit the detection results of the substrate detection units 38, 89, 127 to the external device, for example, before the control unit 9 acquires information on the shape of the substrate W from the external device.
Fourth example
The substrate processing apparatus 1 may have an input unit that can input information on the shape of the substrate. The control unit 9 may acquire information on the shape of the substrate W inputted to the input unit.
In the third or fourth example, the information related to the shape of the substrate W may be information directly indicating the shape of the substrate W. The information directly indicating the shape of the substrate W is, for example, information directly indicating which of the first substrate W1, the second substrate W2, and the third substrate W3 the substrate W belongs to. When the control unit 9 acquires information directly indicating the shape of the substrate W, the control unit 9 does not perform step S2 of determining the shape of the substrate W.
In the third or fourth example, the information related to the shape of the substrate W may be information indirectly indicating the shape of the substrate W. When the control unit 9 acquires information indirectly indicating the shape of the substrate W, the control unit 9 performs step S2 of determining the shape of the substrate W based on the information indirectly indicating the shape of the substrate W.
In the above embodiment, the control unit 9 executes step S11 of determining the height positions HA and HB, step S12 of determining the insertion amounts KA and KB, and step S13 of determining the movement speed VA and the acceleration AA. However, the present invention is not limited thereto. For example, at least one of steps S11, S12, and S13 may be omitted. For example, the control unit 9 may not execute at least one of steps S11, S12, and S13.
In the above-described embodiment, the control section 9 executes step S21 of determining the height position HC, step S22 of determining the insertion amount KC, step S23 of determining the flow rate M, step S24 of determining the processing unit 7, and step S25 of determining the movement speed VB and the acceleration AB. However, the present invention is not limited thereto. For example, at least one of steps S21, S22, S23, S24, and S25 may be omitted. For example, the control unit 9 may not execute at least one of steps S21, S22, S23, S24, and S25.
In the above-described embodiment, the structures of the conveying mechanisms 4 and 8 are exemplified. However, the present invention is not limited thereto. For example, the conveyance mechanism 4 may have a multi-joint arm instead of the rotating portion 34d and the advancing and retreating portion 34e. The multi-joint arm is supported by the vertical movement portion 34c, and supports the hand 33. For example, the conveyance mechanism 4 may have a table or a column without the rail 34a and the horizontal movement portion 34 b. The table or the stay is fixedly provided, and supports the vertical movement portion 34c. For example, the conveyance mechanism 8 may have a multi-joint arm instead of the rotating portion 62c and the advancing and retreating portion 62d. The multi-joint arm is supported by the vertical movement portion 62b, supporting the hand 61.
In the above embodiment, the number of the conveying mechanisms provided in the processing region 5 is one. However, the present invention is not limited thereto. The number of the carrying mechanisms provided in the processing region 5 may be two. That is, the processing region 5 may have two or more transfer mechanisms. For example, a plurality of carrying mechanisms may be provided in the carrying space 41 in the processing region 5. For example, the plurality of conveying mechanisms may be arranged in the front-rear direction X. The number of processing units 7 may be increased according to the number of conveyance mechanisms in the processing area 5. The number of the process units 7 arranged in the front-rear direction X may also be appropriately changed.
The above-described embodiments and modified embodiments may be modified as appropriate by further replacing or combining the respective structures with the structures of other modified embodiments.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and accordingly, reference should be made to the appended claims, rather than to the foregoing specification, as indicating the scope of the invention.

Claims (6)

1. A substrate processing apparatus, wherein,
the device comprises:
a processing unit that processes a substrate;
a transport mechanism that transports a substrate to the processing unit; and
a control unit for controlling the transport mechanism,
the processing unit has a first processing unit and a second processing unit,
the first processing unit has:
a first substrate holding section for holding a substrate; and
a first rotation driving unit for rotating the first substrate holding unit,
the first substrate holding portion includes:
a first plate;
a support portion protruding upward from an upper surface of the first plate, contacting at least one of a lower surface of the substrate and an edge of the substrate, and supporting the substrate at a position higher than the upper surface of the first plate; and
a gas outlet formed in the upper surface of the first plate, for blowing gas between the upper surface of the first plate and the lower surface of the substrate supported by the support portion, and for sucking the substrate downward,
The second processing unit has:
a second substrate holding section for holding a substrate; and
a second rotation driving unit for rotating the second substrate holding unit,
the second substrate holding portion includes:
a second plate; and
an edge contact part mounted on the second plate and contacting with the edge of the substrate when the second substrate holding part is rotated by the second rotation driving part,
the control unit determines the processing unit that processes the substrate as one of the first processing unit and the second processing unit according to the shape of the substrate, and conveys the substrate to the determined processing unit by the conveying mechanism.
2. The substrate processing apparatus according to claim 1, wherein,
the edge contact portion holds the substrate so that the substrate does not slide with respect to the edge contact portion when the second substrate holding portion is rotated by the second rotation driving portion.
3. The substrate processing apparatus according to claim 1, wherein,
the control unit determines the processing unit for processing the substrate as one of the first processing unit and the second processing unit based on a thickness of a main portion of the substrate located inside a peripheral portion of the substrate.
4. The substrate processing apparatus according to claim 3, wherein,
the control unit conveys a substrate having a first thickness in the main portion of the substrate to the first processing unit, and conveys a substrate having a second thickness larger than the first thickness in the main portion of the substrate to the second processing unit.
5. The substrate processing apparatus according to claim 1, wherein,
the substrate comprises:
a first substrate having a recess formed by recessing a main portion of the substrate located inside a peripheral portion of the substrate from the peripheral portion of the substrate, and having no glass protective plate; and
a second substrate having no recess,
the control section determines the processing unit that processes the first substrate as the first processing unit and causes the first substrate to be carried toward the first processing unit, and determines the processing unit that processes the second substrate as the second processing unit and causes the second substrate to be carried toward the second processing unit.
6. The substrate processing apparatus according to claim 1, wherein,
the substrate comprises:
a first substrate having a recess formed by recessing a main portion of the substrate located inside a peripheral portion of the substrate from the peripheral portion of the substrate, and having no glass protective plate; and
A third substrate having the concave portion and having a protective plate made of glass,
the control section determines the processing unit that processes the first substrate as the first processing unit and causes the first substrate to be carried toward the first processing unit, and determines the processing unit that processes the third substrate as the second processing unit and causes the third substrate to be carried toward the second processing unit.
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