KR20160134921A - Apparatus for treating substrate, method for detecting lift pin alignment and method for detecting whether electrostatic force is applied - Google Patents

Abstract

The present invention relates to a substrate treatment apparatus. According to one embodiment of the present invention, the substrate treatment apparatus comprises: a chamber; a support unit; a gas supply unit; a plasma source; and a detection unit. The detection unit comprises: a radiation unit; a light receiving member; and a determination member. The radiation unit radiates light to a substrate or an adjacent portion to the substrate, and the light receiving member is disposed at a position receiving the light in accordance with the state of a lift pin or the substrate. The determination member determines the state of the lift pin or the substrate in accordance with whether or not the light receiving member receives the light.

Description

Technical Field [0001] The present invention relates to a substrate processing apparatus, a substrate processing apparatus, a substrate processing apparatus, a substrate processing apparatus, a lift pin alignment state determination method,

The present invention relates to a substrate processing apparatus for processing a substrate.

In the process of manufacturing a semiconductor device, various processes such as photolithography, etching, thin film deposition, ion implantation, and cleaning are performed. Among these processes, a substrate processing apparatus using plasma is used for etching, thin film deposition, and cleaning processes.

1 and 2 are sectional views showing a substrate supporting unit of a general substrate processing apparatus.

Referring to Fig. 1, the substrate 1 is placed in the chamber 3 by a plurality of lift pins 2 or is lifted from the substrate supporting unit 3. If each lift pin 2 is not in the correct position with the substrate 1 being lifted by the lift pins 2 for transport into and out of the chamber, the substrate may be damaged during substrate transport.

2, the substrate supporting unit 3 may include an electrostatic electrode 4 for applying an electrostatic force to the substrate. The substrate supporting unit 3 electrostatically adsorbs the substrate 1 using an electrostatic force when the substrate is placed. When the substrate 1 is lifted using the lift pins 2 or the like in a state where an electrostatic force is applied to or remains on the substrate 1, the substrate 1 may be warped or cracked.

However, it is not easy to judge the alignment state of the lift pins 2 and judge whether or not the electrostatic force is applied to the substrate 1.

An object of the present invention is to provide an apparatus and a method for determining an alignment state of a lift pin.

The present invention also provides an apparatus and method for determining whether or not an electrostatic force is applied to a substrate.

It is still another object of the present invention to provide an apparatus and a method for preventing damage to a substrate during substrate transportation.

It is still another object of the present invention to provide an apparatus and a method capable of preventing warpage or breakage of a substrate.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a chamber for providing a processing space therein; A support unit having a support plate for supporting the substrate in the chamber and a plurality of lift pins for mounting the substrate on the support plate or lifting the substrate from the support plate; And a detection unit for detecting the state of the lift pin or the state of the substrate provided in the support unit, wherein the detection unit comprises: an irradiation member provided to irradiate light toward an upper surface of the support unit; A light receiving member arranged to receive the light according to the state of the lift pin or the state of the substrate; And a determination member for determining the state of the lift pin or the state of the substrate according to whether the light receiving member receives the light.

The light may be laser light.

The state of the lift pins includes a vertically aligned state of the lift pins, and the irradiation member irradiates the light toward an upper surface region of the substrate with the substrate placed on the lift pins.

Wherein the light receiving member receives the light when the substrate is in parallel with the upper surface of the support plate and at a predetermined height in a state in which the lift pin lifts the substrate from the support plate, And is disposed so as not to receive the light when it is inclined or positioned at a position other than the set height.

The support unit includes an electrostatic electrode for applying an electrostatic force to a substrate placed on the support plate, and the state of the substrate includes whether or not electrostatic force is applied to the substrate.

Wherein the upper surface of the support plate is a first area located on one side with respect to a straight line passing through the center of the area opposed to the substrate when the substrate is in the correct position on the support plate; And a second region that is a region located on the other side, wherein the lift pin includes: a first pin located in the first region; And a second pin located in the second region, wherein the first pin and the second pin are independently moved up and down.

Wherein the first pin is located at a position higher than the upper surface of the support plate and the second pin is positioned at a lower position than the upper surface of the support plate, The irradiation member is arranged such that when the substrate is placed in the first position, the light is irradiated to the outside of the upper surface of the substrate, and when the substrate is placed in the second position, And the light receiving member is arranged to receive the light reflected from the upper surface of the substrate, the first position being a position of the substrate when no electrostatic force is applied to the substrate, The position of the substrate when an electrostatic force is applied to the substrate.

Wherein the first pin is located at a position higher than the upper surface of the support plate and the second pin is positioned at a lower position than the upper surface of the support plate, The irradiation member is arranged such that when the substrate is placed in the first position, the light is irradiated to the outside of the upper surface of the substrate, and when the substrate is placed in the second position, Wherein the first position is a position of the substrate when no electrostatic force is applied to the substrate, and the second position is a position where the electrostatic force is not applied to the substrate, And the position of the substrate when an electrostatic force is applied to the substrate.

The irradiation member and the light receiving member are each provided in a plurality.

The light receiving member includes an end point detection device for detecting a completion time of the process for the substrate.

In addition, the present invention provides a method of determining a lift pin alignment state. The lift pin alignment state determination method according to an embodiment of the present invention determines the vertical alignment state of the lift pins using the above-described substrate processing apparatus, and the lift pins are disposed on the support plate, An ascending phase; Thereafter, the irradiation member irradiates light onto the substrate; And a determining step of determining a vertical alignment state of the lift pins according to whether the light receiving member receives the light.

Wherein the light receiving member receives the light when the substrate is positioned parallel to the upper surface of the support plate while the lift pin lifts the substrate from the support plate so that the substrate is inclined with respect to the upper surface of the support plate When the light receiving member receives light, it is determined that all of the lift pins are aligned at a predetermined position, and when the light receiving member does not receive light It is determined that some or all of the lift pins are not aligned in position.

The present invention also provides a method for determining whether or not an electrostatic force is applied. The method of determining whether or not electrostatic force is applied according to an embodiment of the present invention includes determining whether or not an electrostatic force is applied to a substrate placed on the support plate by using the substrate processing apparatus described above, A lift pin moving step in which each of the lift pins is moved such that an upper end thereof is located at a position higher than an upper surface of the support plate and the second pin is located at a lower position than an upper surface of the support plate; Thereafter, the irradiation member irradiates light; And then determining that an electrostatic force is applied to the substrate when the light receiving member receives the light and determining that no electrostatic force is applied to the substrate when the light receiving member does not receive the light; .

The method of determining whether or not electrostatic force is applied according to another embodiment of the present invention is characterized in that when the light receiving member receives the light, it is determined that no electrostatic force is applied to the substrate, and when the light receiving member does not receive the light, A determination step of determining that the electrostatic force is applied.

The apparatus and method according to an embodiment of the present invention can determine the alignment state of the lift pins.

In addition, the apparatus and method according to an embodiment of the present invention can determine whether or not electrostatic force is applied to the substrate.

Further, the apparatus and method according to an embodiment of the present invention can prevent the substrate from being damaged during substrate transportation.

Further, the apparatus and method according to an embodiment of the present invention can prevent the substrate from warping or cracking.

1 and 2 are sectional views showing a substrate supporting unit of a general substrate processing apparatus.
3 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
Figs. 4 and 5 are views for explaining the detection unit of Fig. 3. Fig.
6 is a flowchart illustrating a method of determining a lift pin alignment state according to an embodiment of the present invention.
7 is a plan view of the support plate of Fig.
8 is a cross-sectional view showing the substrate placed in the first position;
9 is a cross-sectional view showing the substrate placed in the second position;
10 is a flowchart illustrating a method of determining whether or not an electrostatic force is applied according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

In an embodiment of the present invention, a substrate processing apparatus having an inductively coupled plasma (ICP) source for etching a substrate using plasma will be described. However, the present invention is not limited to this, and a lift pin such as a substrate processing apparatus having a capacitive coupled plasma (CCP) source is provided and applied to various types of apparatuses performing a process on a substrate It is possible.

In the embodiment of the present invention, an electrostatic chuck is described as an example of a supporting unit. However, the present invention is not limited to this, and the support unit can support the substrate by mechanical clamping or support the substrate by vacuum if the electrostatic chuck is not necessarily required.

3 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention. Referring to Fig. 3, the substrate processing apparatus 10 processes the substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 includes a chamber 100, a support unit 200, a gas supply unit 300, a plasma source 400, an exhaust unit 500 and a detection unit 600.

The chamber 100 is provided with a processing space in which a substrate processing process is performed. The chamber 100 includes a housing 110, a cover 120, and a liner 130.

The housing 110 has a space in which an upper surface is opened. The inner space of the housing 110 is provided to the processing space where the substrate processing process is performed. The housing 110 is made of a metal material. The housing 110 may be made of aluminum. The housing 110 may be grounded. An exhaust hole 102 is formed in the bottom surface of the housing 110. The exhaust hole 102 is connected to the exhaust line 151. The reaction by-products generated in the process and the gas staying in the inner space of the housing can be discharged to the outside through the exhaust line 151. The inside of the housing 110 is decompressed to a predetermined pressure by the exhaust process.

The cover 120 covers the open upper surface of the housing 110. The cover 120 is provided in a plate shape to seal the inner space of the housing 110. The cover 120 may include a dielectric substance window.

The liner 130 is provided inside the housing 110. The liner 130 has an inner space with open top and bottom surfaces. The liner 130 may be provided in a cylindrical shape. The liner 130 may have a radius corresponding to the inner surface of the housing 110. The liner 130 is provided along the inner surface of the housing 110. At the upper end of the liner 130, a support ring 131 is formed. The support ring 131 is provided in the form of a ring and projects outwardly of the liner 130 along the periphery of the liner 130. The support ring 131 rests on the top of the housing 110 and supports the liner 130. The liner 130 may be provided in the same material as the housing 110. The liner 130 may be made of aluminum. The liner 130 protects the inside surface of the housing 110. An arc discharge may be generated in the chamber 100 during the process gas excitation. Arc discharge damages peripheral devices. The liner 130 protects the inner surface of the housing 110 to prevent the inner surface of the housing 110 from being damaged by the arc discharge. Also, impurities generated during the substrate processing process are prevented from being deposited on the inner wall of the housing 110. The liner 130 is less expensive than the housing 110 and is easier to replace. Thus, if the liner 130 is damaged by an arc discharge, the operator can replace the new liner 130.

The support unit 200 supports the substrate within the processing space inside the chamber 100. For example, the support unit 200 is disposed inside the chamber housing 110. The support unit 200 supports the substrate W. [ The support unit 200 can adsorb the substrate W using an electrostatic force. Alternatively, the support unit 200 may support the substrate W in various manners, such as mechanical clamping. Hereinafter, the support unit 200 using an electrostatic force will be described.

The support unit 200 includes a support plate 220, an electrostatic electrode 223, a heater 225, a flow path plate 230, a focus ring 240, an insulation plate 250, a lower cover 270, 280). The support unit 200 may be provided in the chamber 100 and spaced upward from the bottom surface of the chamber housing 110.

The support plate 220 is located at the upper end of the support unit 200. The support plate 220 is provided as a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the support plate 220. The upper surface of the support plate 220 has a smaller radius than the substrate W. [ The support plate 220 is formed with a first supply passage 221 used as a passage through which heat transfer gas is supplied to the bottom surface of the substrate W. An electrostatic electrode 223 and a heater 225 are embedded in the support plate 220.

The electrostatic electrode 223 is located on the top of the heater 225. The electrostatic electrode 223 is electrically connected to the first lower power source 223a. The electrostatic electrode 223 applies an electrostatic force to the substrate W placed on the support plate 220. For example, an electrostatic force is applied between the electrostatic electrode 223 and the substrate W by the current applied to the electrostatic electrode 223, and the substrate W is attracted to the support plate 220 by the electrostatic force.

The heater 225 is electrically connected to the second lower power source 225a. The heater 225 generates heat by resisting the current applied from the second lower power supply 225a. The generated heat is transferred to the substrate W through the support plate 220. The substrate W is maintained at a predetermined temperature by the heat generated in the heater 225. The heater 225 includes a helical coil. A flow path plate 230 is positioned below the support plate 220. The bottom surface of the support plate 220 and the upper surface of the flow path plate 230 can be adhered by an adhesive agent 236. [

A first circulation channel 231, a second circulation channel 232, and a second supply channel 233 are formed in the flow path plate 230. The first circulation passage 231 is provided as a passage through which the heat transfer gas circulates. The second circulation flow passage 232 is provided as a passage through which the cooling fluid circulates. The second supply passage 233 connects the first circulation passage 231 with the first supply passage 221. The first circulation passage 231 is provided as a passage through which the heat transfer gas circulates. The first circulation flow path 231 may be formed in a spiral shape inside the flow path forming plate 230. Alternatively, the first circulation flow path 231 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 are formed at the same height.

The first circulation channel 231 is connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium is stored in the heat transfer medium storage unit 231a. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium comprises helium (He) gas. The helium gas is supplied to the first circulation channel 231 through the supply line 231b and is supplied to the bottom surface of the substrate W through the second supply channel 233 and the first supply channel 221 in sequence. The helium gas serves as a medium for assisting heat exchange between the substrate W and the support plate 220. Therefore, the temperature of the substrate W becomes uniform throughout.

The second circulation channel 232 is connected to the cooling fluid storage 232a through the cooling fluid supply line 232c. The cooling fluid is stored in the cooling fluid storage part 232a. A cooler 232b may be provided in the cooling fluid storage portion 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 through the cooling fluid supply line 232c is circulated along the second circulation channel 232 to cool the flow path formation plate 230. The flow path forming plate 230 is cooled and the support plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The focus ring 240 is disposed in the edge area of the support unit 200. The focus ring 240 has a ring shape and is disposed along the periphery of the support plate 220 to support the edge region of the substrate W. [ An insulating plate 250 is disposed under the flow path forming plate 230. The insulating plate 250 is provided as an insulating material and electrically isolates the flow path plate 230 from the lower cover 270.

The lower cover 270 is located at the lower end of the support unit 200. The lower cover 270 is spaced upwardly from the bottom surface of the housing 110. The lower cover 270 has a space in which an upper surface is opened. The upper surface of the lower cover 270 is covered with an insulating plate 250. The outer radius of the cross section of the lower cover 270 may be provided with a length equal to the outer radius of the insulating plate 250. [ A driving member (not shown) for driving the lift pins 280 in the vertical direction may be positioned in the inner space of the lower cover 270.

The lower cover 270 has a connecting member 273. The connecting member 273 connects the outer side surface of the lower cover 270 and the inner side wall of the housing 110. A plurality of connecting members 273 may be provided on the outer surface of the lower cover 270 at regular intervals. The connecting member 273 supports the support unit 200 inside the chamber 100. Further, the connecting member 273 is connected to the inner wall of the housing 110, so that the lower cover 270 is electrically grounded. A first power supply line 223c connected to the first lower power supply 223a, a second power supply line 225c connected to the second lower power supply 225a, a heat transfer medium supply line 233b connected to the heat transfer medium storage 231a And a cooling fluid supply line 232c connected to the cooling fluid reservoir 232a extend into the lower cover 270 through the inner space of the connection member 273. [

The lift pins 280 transfer the substrate W conveyed into the processing space of the chamber 100 from the external conveying member to the support plate 220. The lift pins 280 are provided to seat the substrate W with the support plate 220 or lift the substrate from the support plate 220. A plurality of lift pins 280 are provided. The lift pins 280 are provided in the form of a bar. The lift pins 280 are provided along the vertical direction in the longitudinal direction. Each of the lift pins 280 is provided so as to be movable in the vertical direction through respective pinholes (not shown) formed in the support unit 200.

The gas supply unit 300 supplies the process gas to the processing space inside the chamber 100. The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is installed at the center of the cover 120. A jetting port is formed on the bottom surface of the gas supply nozzle 310. The injection port is located at the bottom of the cover 120 and supplies the process gas into the chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 330 to the gas supply nozzle 310. A valve 321 is installed in the gas supply line 320. The valve 321 opens and closes the gas supply line 320 and regulates the flow rate of the process gas supplied through the gas supply line 320.

The plasma source 400 excites the process gas into a plasma state within the chamber 100. As the plasma source 400, an inductively coupled plasma (ICP) source may be used. The plasma source 400 includes an antenna chamber 410, an antenna 420, and a plasma power source 430. The antenna chamber 410 is provided in a cylindrical shape with its bottom opened. The antenna chamber 410 is provided with a space therein. The antenna chamber 410 is provided so as to have a diameter corresponding to the chamber 100. The lower end of the antenna chamber 410 is detachably attached to the cover 120. The antenna 420 is disposed inside the antenna chamber 410. The antenna 420 is provided with a plurality of turns of helical coil, and is connected to the plasma power source 430. The antenna 420 receives power from the plasma power supply 430. The plasma power source 430 may be located outside the chamber 100. The powered antenna 420 may form an electromagnetic field in the processing space of the chamber 100. The process gas is excited into a plasma state by an electromagnetic field.

The exhaust unit 500 is positioned between the inner wall of the housing 110 and the support unit 200. The exhaust unit 500 includes an exhaust plate 510 having a through-hole 511 formed therein. The exhaust plate 510 is provided in an annular ring shape. A plurality of through holes 511 are formed in the exhaust plate 510. The process gas provided in the housing 110 passes through the through holes 511 of the exhaust plate 510 and is exhausted to the exhaust hole 102. The flow of the process gas can be controlled according to the shape of the exhaust plate 510 and the shape of the through holes 511. [

The detection unit 600 detects the state of the lift pins 280 or the state of the substrate W provided in the support unit 200. [ The detection unit 600 includes an irradiation member 610, a light receiving member 620, and a determination member 630.

The irradiation member 610 irradiates light toward the upper surface of the support unit 200. The light may be provided as laser light. For example, the irradiation member 610 may include a laser pointer. In the case where light is provided by laser light, more precise measurement of the position of the substrate is possible since the light is irradiated in a narrow area.

The light receiving member 620 can receive the light reflected by the substrate W irradiated by the irradiation member 610. [ According to the embodiments of the present invention, the light receiving member 620 is arranged to receive light in accordance with the state of the lift pin 280 or the state of the substrate W. [

The determination member 630 determines the state of the lift pin 280 or the state of the substrate W depending on whether the light receiving member 620 receives light reflected on the substrate W. [

Hereinafter, the detection unit 600 according to an embodiment of the present invention will be described in more detail.

FIGS. 4 and 5 are views for explaining the detection unit 600 of FIG. 3-5, in accordance with one embodiment, the detection unit 600 detects the condition of the lift pins 280. As shown in FIG. The state of the lift pin 280 detected by the detection unit 600 is a vertically aligned state of the lift pin 280. [

The irradiation member 610 irradiates light toward the upper surface of the substrate W in a state where the substrate W is placed on the lift pins 280. [ The irradiation member 610 irradiates light at a fixed position and angle regardless of the position of the substrate W. [ Accordingly, when the relative angle of the upper surface of the substrate W with respect to incident light is changed, the incident angle of light with respect to the upper surface of the substrate W is changed. The incident angle and the reflection angle of light are the same. 4, if some of the lift pins 280 supporting the substrate W are not aligned in the correct position, or when the substrate W is lifted lower or higher than the set height, 5, the light reflected on the substrate W faces a different position from the case where all of the plurality of lift pins 280 supporting the substrate W are aligned in the right position. The irradiation member 610 is provided at an inner wall surface of the chamber 100 at a position higher than the upper end of the support unit 200. [ The irradiation member 610 may be provided so as to surround a plurality of the support units 200. [

The light receiving member 620 is provided on the substrate W when the lift pins 280 lift the substrate W from the support plate 220 and the substrate W is positioned parallel to the upper surface of the support plate 220 And is arranged so as not to receive the light reflected by the substrate W when the substrate W is positioned so as to be inclined with respect to the upper surface of the support plate 220. [ The light receiving member 620 is provided at an inner wall surface of the chamber 100 at a position higher than the upper end of the supporting unit 200. A plurality of light receiving members 620 may be provided. The light receiving member 620 is provided in the same number as that of the irradiation member 610 and each of the light receiving members 620 is irradiated by each irradiation member 610 so that light reflected on the substrate W reaches a set position It may be provided so as to surround the support unit 200 correspondingly to the respective irradiation members 610 so that light can be received. The light receiving member 620 may include an end point detection device for detecting the completion time of the process for the substrate W. [ For example, the light receiving member 620 receives light reflected from the substrate W through the end point detecting device.

Hereinafter, a method of determining a vertical alignment state of a lift pin according to an embodiment of the present invention, using the detection unit 600 of FIGS. 4 and 5, will be described.

6 is a flowchart illustrating a method of determining a lift pin alignment state according to an embodiment of the present invention. Referring to FIGS. 4 to 6, the method for determining the alignment state of the lift pin includes a substrate elevating step S11, a light irradiation step S12, and a determining step S13.

In the substrate lifting step S11, the lift pins 280 lift the substrate W placed on the support plate 220 from the support plate 220.

In the light irradiation step S12, the irradiation member 610 irradiates the substrate W lifted by the lift pin 280 with light. The light is reflected by the substrate W and reaches a predetermined position according to the arrangement angle or height of the substrate W. [

In the determining step S13, the vertical alignment state of the lift pins 280 is determined according to whether the light receiving member 620 receives light reflected on the substrate W. [ For example, if the lift pins 280 are all aligned in position, the height of the top of each of the lift pins 280 is the same. In this case, since the substrate W is positioned parallel to the upper surface of the support plate 220, the light receiving member 620 receives the light, and the determination member 630 is positioned such that the respective lift pins 280 are aligned . In addition, when some or all of the lift pins 280 are not aligned in a proper position, the substrate W may be inclined with respect to the upper surface of the support plate 220, or may be positioned at a position lower or higher than a predetermined position, 620 do not receive light and the determination member 630 determines that some or all of the lift pins 280 are not aligned in position.

The substrate lifting step S11 and the light irradiation step S12 may be sequentially performed as shown in FIG. Alternatively, the substrate lifting step S11 and the light irradiation step S12 may be performed simultaneously or the light irradiation step S12 may be performed first. For example, it is possible to detect whether light is received by raising the substrate W in a state in which light is being irradiated.

As described above, the present invention can determine the alignment state of the lift pins 280 before the transfer of the substrate W from the support plate 220, so that the transfer member can not be properly gripped It is possible to prevent the substrate W from being damaged.

Hereinafter, the detection unit 600 according to another embodiment of the present invention will be described in more detail.

7 is a plan view of the support plate of Fig. 8 is a cross-sectional view showing a state where the substrate W is placed in the first position. Fig. 9 is a cross-sectional view showing the substrate W being placed in the second position. 3 is a view for explaining a detection unit according to another embodiment of Fig. 3; Fig. Referring to Figs. 7 to 9, the detection unit 600 detects the state of the substrate W. Fig. The state of the substrate W detected by the detection unit 600 is whether or not an electrostatic force generated by the electrostatic electrode 223 is applied to the substrate W. [

The upper surface of the support plate 220 includes a first region 220a and a second region 220b.

The first area 220a is located on one side of a straight line passing through the center of the area of the upper surface of the support plate 220 opposed to the substrate W when the substrate W is positioned on the support plate 220 And the second area 220b is an area located on the other side.

The lift pin 280 includes a first pin 281 and a second pin 282. The first pin 281 is located in a first region 220a of the support plate 220 and the second pin 282 is located in a second region 220b of the support plate 220. In general, the lift pins 280 are provided in three or more in order to stably support the substrate W. Thus, the first pin 281 and the second pin 282 may be provided in one or more than two. The first pin 281 and the second pin 282 are provided so as to be independently moved up and down.

4 and 5, the substrate W is placed on the support plate 220, and the first fin 281 is positioned at a position higher than the upper surface of the support plate 220 And the second pin 282 is located at a position lower than the upper surface of the support plate 220 so that the irradiation member 610 is positioned at a position where the substrate W is located at the first position, The light is irradiated to the outside of the upper surface of the substrate W and the light is irradiated to the upper surface of the substrate W when the substrate W is located at the second position, And is arranged to receive light. In this case, the height at which the first fin 281 rises is a height at which the substrate W is not bent or broken when the first fin 281 is raised when the substrate W is attracted by the electrostatic force to the support plate 220 to be. This is determined through multiple tests.

For example, referring to Fig. 8, the first position is the position of the substrate W when no electrostatic force is applied to the substrate W. Fig. Since the substrate W is not provided with a force to attract the substrate W to the upper surface of the supporting plate 220 when the electrostatic force generated by the electrostatic electrode 223 is not applied to the substrate W, The frictional force between the upper surfaces becomes smaller. When the upper end of the first fin 281 is positioned higher than the upper surface of the support plate 220 and the upper end of the second fin 282 is positioned lower than the upper surface of the support plate 220, (W) is slid in the direction toward the second pin (282) by a certain distance due to gravity.

Referring to FIG. 9, the second position is the position of the substrate W when an electrostatic force is applied to the substrate W. Since the substrate W is attracted to the upper surface of the support plate 220 when the electrostatic force generated by the electrostatic electrode 223 is applied to the substrate W, The frictional force between them increases. When the upper end of the first fin 281 is positioned higher than the upper surface of the support plate 220 and the upper end of the second fin 282 is positioned lower than the upper surface of the support plate 220, The substrate W is caused to slide in the direction toward the second fin 282 by a small distance as compared with the case where no electrostatic force is applied to the substrate W. [

The irradiation member 610 is fixedly arranged so as to irradiate the light toward the upper end of the inclined substrate W so that when the substrate W is located at the first position, W and the substrate W is irradiated on the upper surface of the substrate W when the substrate W is placed in the second position.

8 and 9, the substrate W is placed on the support plate 220. The first pin 281 is located at a position higher than the upper surface of the support plate 220, The light receiving member 620 can be arranged to receive light irradiated to the outside of the upper surface of the substrate W, with the upper end being positioned lower than the upper surface of the support plate 220. [

Hereinafter, the detection unit 600 of FIGS. 8 and 9 is used to determine whether or not electrostatic force is applied to the substrate W placed on the support plate 220 according to the embodiment of the present invention by the electrostatic electrode 223 A method of determining whether the electrostatic force is applied will be described.

10 is a flowchart illustrating a method of determining whether or not an electrostatic force is applied according to an embodiment of the present invention. Referring to FIGS. 8 to 10, the method for determining whether or not the electrostatic force is applied includes a lift pin moving step S21, a light irradiation step S22, and a determining step S33.

In the lift pin moving step S21, the first pin 281 is positioned higher than the upper surface of the support plate 220 while the substrate W is placed on the support plate 220, and the second pin 282 The respective lift pins 280 are moved such that the upper ends thereof are positioned lower than the upper surface of the support plate 220. In this case, as described above, the substrate W is positioned to be inclined on the upper surface of the support plate 220, and the substrate W slides in the direction toward the second fin 282 depending on whether electrostatic force is applied from the electrostatic electrode 223 Distances are different. Thus, the substrate W is located at the above-described first position or second position.

In the light irradiation step S22, the irradiation member 610 irradiates light. As described above, the irradiation member 610 is arranged such that when the substrate W is placed at the first position, light is irradiated to the outside of the upper surface of the substrate W, and the substrate W is placed at the second position , And irradiates light toward a direction in which light can be irradiated onto the upper surface of the substrate W.

In the determination step S23, when the light receiving member 620 receives light, it is determined that an electrostatic force is applied to the substrate W because the substrate W is located at the first position, and the light receiving member 620 determines light It is determined that the electrostatic force is not applied to the substrate W since the substrate W is located at the second position.

The first pin 281 is located at a position higher than the upper surface of the support plate 220 and the second pin 282 is positioned at a position higher than the upper surface of the support plate 220 When the light receiving member 620 is arranged to receive light irradiated to the outside of the upper surface of the substrate W in a state where the light receiving member 620 is positioned lower than the upper surface of the light receiving member 620 It is determined that the electrostatic force is not applied to the substrate W. When the light receiving member 620 does not receive the light, It is determined that the electrostatic force is applied to the substrate W. [

The lift pin moving step S21 and the light irradiation step S22 may be sequentially performed as shown in FIG. Alternatively, the lift pin moving step S21 and the light irradiation step S22 may be performed simultaneously or the light irradiation step S22 may be performed first. For example, it is possible to detect whether light is received by raising the first pin 281 by a predetermined distance in a state in which light is being irradiated.

As described above, the present invention can determine whether or not the substrate W is adsorbed by the electrostatic force before lifting the substrate W from the support plate 220 to transport the substrate W, so that the lift pins It is possible to prevent the substrate W from being bent or broken by the force that the substrate W is attracted by the force of lifting the substrate W and the electrostatic force acting in the opposite direction.

10: substrate processing apparatus W: substrate
100: chamber 200: support unit
220: support plate 223: electrostatic electrode
280: Lift pin 300: Gas supply unit
400: plasma source 500: exhaust unit
600: Detection unit 610: Irradiation member
620: light receiving member 630: judgment member

Claims (14)

An apparatus for processing a substrate,
A chamber for providing a processing space therein;
A support unit having a support plate for supporting the substrate in the chamber and a plurality of lift pins for mounting the substrate on the support plate or lifting the substrate from the support plate;
And a detection unit for detecting the state of the lift pin or the state of the substrate provided in the support unit,
Wherein the detection unit comprises:
An irradiation member provided to irradiate light toward an upper surface of the support unit;
A light receiving member arranged to receive the light according to the state of the lift pin or the state of the substrate;
And a determination member for determining the state of the lift pin or the state of the substrate according to whether the light receiving member receives the light. The method according to claim 1,
Wherein the light is laser light. 3. The method of claim 2,
Wherein the state of the lift pins includes a vertically aligned state of the lift pins,
Wherein the irradiation member irradiates the light toward an upper surface region of the substrate with the substrate placed on the lift pin. The method of claim 3,
Wherein the light receiving member receives the light when the substrate is in parallel with the upper surface of the support plate and at a predetermined height in a state in which the lift pin lifts the substrate from the support plate, And is disposed so as not to receive the light if it is inclined or positioned at a position other than the set height. 3. The method of claim 2,
Wherein the support unit includes an electrostatic electrode for applying an electrostatic force to a substrate placed on the support plate,
Wherein the state of the substrate includes whether electrostatic force is applied to the substrate. 6. The method of claim 5,
Wherein the upper surface of the support plate is a first area located on one side with respect to a straight line passing through the center of the area opposed to the substrate when the substrate is in the correct position on the support plate; And a second region that is a region located on the other side,
The lift pin
A first pin located in the first region; And
And a second pin located in the second region,
Wherein the first pin and the second fin are independently moved up and down. The method according to claim 6,
Wherein the first pin is located at a position higher than the upper surface of the support plate and the second pin is located at a position lower than the upper surface of the support plate,
The irradiation member is arranged such that when the substrate is positioned at the first position, the light is irradiated to the outside of the upper surface of the substrate, and when the substrate is positioned at the second position, Disposed,
Wherein the light receiving member is arranged to receive the light reflected from the upper surface of the substrate,
Wherein the first position is a position of the substrate when no electrostatic force is applied to the substrate,
Wherein the second position is a position of the substrate when an electrostatic force is applied to the substrate. The method according to claim 6,
Wherein the first pin is located at a position higher than the upper surface of the support plate and the second pin is located at a position lower than the upper surface of the support plate,
The irradiation member is arranged such that when the substrate is positioned at the first position, the light is irradiated to the outside of the upper surface of the substrate, and when the substrate is positioned at the second position, Disposed,
The light receiving member is arranged to receive the light emitted to the outside of the upper surface of the substrate,
Wherein the first position is a position of the substrate when no electrostatic force is applied to the substrate,
Wherein the second position is a position of the substrate when an electrostatic force is applied to the substrate. 9. The method according to any one of claims 1 to 8,
Wherein the irradiation member and the light receiving member are provided in plural numbers, respectively. 9. The method according to any one of claims 1 to 8,
Wherein the light receiving member comprises an end point detection device for detecting a completion time of the process for the substrate. A method for determining a vertical alignment state of a lift pin using the substrate processing apparatus of claim 3,
Wherein the lift pins lift the substrate placed on the support plate from the support plate;
Thereafter, the irradiation member irradiates light onto the substrate; And
And determining a vertical alignment state of the lift pins according to whether the light receiving member receives the light. 12. The method of claim 11,
Wherein the light receiving member receives the light when the substrate is positioned parallel to the upper surface of the support plate while the lift pin lifts the substrate from the support plate so that the substrate is inclined with respect to the upper surface of the support plate The light is not received,
Wherein when the light receiving member receives light, it is determined that all of the lift pins are aligned at a predetermined position, and when the light receiving member does not receive light, And determining that the lift pin alignment state is determined to be not aligned with the position. 10. A method for determining whether or not an electrostatic force is applied to a substrate placed on a support plate using the substrate processing apparatus of claim 7,
The first pin is positioned at a position higher than the upper surface of the support plate while the second pin is positioned at a lower position than the upper surface of the support plate with the substrate being on the support plate, A moving lift pin moving step;
Thereafter, the irradiation member irradiates light; And
Determining that an electrostatic force is applied to the substrate when the light receiving member receives the light and determining that no electrostatic force is applied to the substrate when the light receiving member does not receive the light; And determining whether or not the electrostatic force is included. A method for determining whether an electrostatic force is applied to a substrate placed on a support plate using the substrate processing apparatus of claim 8,
The first pin is positioned at a position higher than the upper surface of the support plate while the second pin is positioned at a lower position than the upper surface of the support plate with the substrate being on the support plate, A moving lift pin moving step;
Thereafter, the irradiation member irradiates light; And
Determining that no electrostatic force is applied to the substrate when the light receiving member receives the light and determining that an electrostatic force is applied to the substrate when the light receiving member does not receive the light; And determining whether or not the electrostatic force is included.

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