CN112531015A - Low-loss gallium nitride radio-frequency material epitaxial structure and preparation method - Google Patents
Low-loss gallium nitride radio-frequency material epitaxial structure and preparation method Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 119
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000000463 material Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 11
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 53
- 229910002704 AlGaN Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 150000001408 amides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000013589 supplement Substances 0.000 abstract description 3
- 230000001502 supplementing effect Effects 0.000 abstract description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention relates to the technical field of semiconductors, in particular to a low-loss gallium nitride radio-frequency material epitaxial structure and a preparation method thereof. According to the invention, the N-type low-doped gallium nitride layer is additionally arranged below the barrier layer, because the sheet resistance of the N-type low-doped gallium nitride layer is lower than that of the two-dimensional electron gas, under the normal on-state condition, the function of participating in conduction is very weak, but in the process from the off-state to the on-state, the electrons of the layer can supplement the reduction of the concentration of the two-dimensional electron gas; secondly, electrons transferred from the buffer layer back to the heterojunction interface can rapidly pass through the buffer layer, so that the effect of rapidly supplementing two-dimensional electron gas of the heterojunction interface is achieved; therefore, the concentration of two-dimensional electron gas in a dynamic process can be reduced to the maximum extent by adding the N-type low-doped gallium nitride layer, so that the radio frequency loss is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a low-loss gallium nitride radio-frequency material epitaxial structure and a preparation method thereof.
Background
The third generation semiconductor has excellent properties such as high forbidden bandwidth, high breakdown electric field, high saturated electron drift velocity and strong polarization. Compared with the traditional devices made of Si materials and the like, the GaN-based device has higher power density output, higher strong field and lower on-resistance, so that the GaN-based device has higher energy conversion frequency efficiency and output power in the practical application of the device, and is widely applied to the fields of consumer electronics, 5G communication, cloud service, photovoltaic inversion, new energy automobiles, power generation and the like due to the excellent performance of the GaN-based device.
In recent years, the commercialization of silicon carbide substrates and GaN epitaxial materials and devices on silicon substrates has been substantially completed and gradually applied to consumer electronics. However, the radio frequency device of the communication 5G is still applied to the second generation semiconductor gallium arsenide material, the third generation semiconductor gallium nitride material is not as good as the gallium arsenide material in the commercial maturity, mainly the dynamic loss is unstable, some methods have been applied to reduce the loss, such as increasing a back barrier structure in an epitaxial layer, increasing a field plate structure in a chip, and the like, and a better result is obtained, but the material for high frequency application still cannot reach a better state at present, and the related technology is still in a stage of attack and shutdown.
Disclosure of Invention
In order to solve the problems, the invention provides a low-loss gallium nitride radio-frequency material epitaxial structure and a preparation method thereof, which mainly solve the problem that the on-resistance is large due to the reduction of the concentration of two-dimensional electron gas of a gallium nitride radio-frequency material under a high-frequency condition, finally reduce the radio-frequency loss and realize the characteristics of a high-quality radio-frequency dynamic device.
In order to achieve the purpose, the invention adopts the technical scheme that: a low-loss gallium nitride radio frequency material epitaxial structure and a preparation method;
wherein, a low-loss gallium nitride radio frequency material epitaxial structure includes:
a silicon substrate;
a buffer layer grown on the silicon substrate;
a gallium nitride channel layer grown on the buffer layer;
an N-type low-doped gallium nitride layer grown on the gallium nitride channel layer;
a barrier layer grown on the N-type low-doped gallium nitride layer;
an amide cap layer grown on the barrier layer.
Preferably, the buffer layer is an HT-AlN/AlGaN buffer layer, and the HT-AlN/AlGaN buffer layer comprises a high-temperature aluminum nitride layer grown on the substrate and a gradual aluminum gallium nitride layer grown on the high-temperature aluminum nitride layer.
As a preferred scheme, the graded aluminum gallium nitride layer includes three aluminum gallium nitride layers with different aluminum compositions, which are a first aluminum gallium nitride layer, a second aluminum gallium nitride layer and a third aluminum gallium nitride layer.
Preferably, the aluminum component of the first aluminum gallium nitride layer is 80%, the aluminum component of the second aluminum gallium nitride layer is 50%, and the aluminum component of the third aluminum gallium nitride layer is 20%.
Preferably, the thickness of the high-temperature aluminum nitride layer is 100nm-200 nm; the thickness of the first aluminum gallium nitrogen layer is 100nm-400 nm; the thickness of the second AlGaN layer is 400-800 nm; the thickness of the third aluminum gallium nitride layer is 800nm-1200 nm.
Preferably, the thickness of the N-type low-doped gallium nitride layer is 10nm-20nm, and the carrier concentration is 1 × E16/cm3-1*E18/cm3。
Preferably, the barrier layer is an AlGaN barrier layer and has a thickness of 15nm to 30 nm.
Preferably, the nitride cap layer is a gallium nitride cap layer, and the thickness of the gallium nitride cap layer is 1nm-5 nm.
The preparation method of the low-loss gallium nitride radio-frequency material epitaxial structure comprises the following steps:
providing a silicon substrate, and cleaning the silicon substrate;
putting the cleaned silicon substrate into MOCVD equipment to perform the epitaxial growth of an HT-AlN/AlGaN buffer layer;
continuously epitaxially growing a gallium nitride channel layer on the HT-AlN/AlGaN buffer layer;
continuously epitaxially growing an N-type low-doped gallium nitride layer on the gallium nitride channel layer;
continuously epitaxially growing an aluminum gallium nitrogen barrier layer on the N-type low-doped gallium nitride layer;
and finally, epitaxially growing a gallium nitride cap layer on the aluminum gallium nitrogen barrier layer to obtain the low-loss gallium nitride radio-frequency material epitaxial structure.
Preferably, the step of epitaxially growing the HT-AlN/AlGaN buffer layer includes:
epitaxially growing a high-temperature aluminum nitride layer on the silicon substrate;
epitaxially growing a first aluminum gallium nitride layer with 80% of aluminum component on the high-temperature aluminum nitride layer;
epitaxially growing a second aluminum gallium nitride layer with 50% of aluminum component on the first aluminum gallium nitride layer;
and epitaxially growing a third aluminum gallium nitride layer with the aluminum component of 20% on the second aluminum gallium nitride layer.
The invention has the beneficial effects that:
the N-type low-doped gallium nitride layer added below the barrier layer is a key layer for solving the problem of two-dimensional electron gas concentration reduction under the radio frequency condition; because the interface of the barrier layer and the gallium nitride channel layer can generate two-dimensional electron gas due to polarization effect and self-polarization, electrons in the two-dimensional electron gas can diffuse to the gallium nitride channel layer under a high-frequency off state; in the on state, the electrons will migrate back to the interface; however, due to the high frequency operation, the time for the electrons to return is slower than the time interval of the switching during the switching process, so that the electron concentration is reduced and the channel resistance is increased.
The N-type low-doped gallium nitride layer has a lower sheet resistance than that of the two-dimensional electron gas, so that the function of participating in conduction is weak under the condition of a normal on-state, but electrons in the layer can supplement the reduction of the concentration of the two-dimensional electron gas in the process from an off-state to an on-state; secondly, electrons transferred from the buffer layer back to the heterojunction interface can also rapidly pass through the buffer layer, so that the effect of rapidly supplementing two-dimensional electron gas of the heterojunction interface is achieved; by combining the factors, the concentration of the two-dimensional electron gas in the dynamic process can be reduced to the maximum extent, so that the radio frequency loss is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a low-loss gallium nitride radio frequency material epitaxial structure according to the present invention.
Fig. 2 is a flow chart of a method for preparing a low-loss gallium nitride radio frequency material epitaxial structure according to the present invention.
Fig. 3 is a block flow diagram of step S20 in fig. 2.
The reference numbers illustrate: 1-a silicon substrate; 2-a high temperature aluminum nitride layer; 3-a first aluminum gallium nitride layer; 4-a second aluminum gallium nitride layer; 5-a third aluminum gallium nitride layer; a 6-gallium nitride channel layer; a 7-N type low-doped gallium nitride layer; an 8-AlGaN barrier layer; a 9-gallium nitride cap layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and examples. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention relates to a low-loss gan rf epitaxial structure, which includes a silicon substrate 1, a buffer layer grown on the silicon substrate 1, a gan channel layer 6 grown on the buffer layer, an N-type low-doped gan layer 7 grown on the gan channel layer 6, a barrier layer grown on the N-type low-doped gan layer 7, and an amide cap layer grown on the barrier layer.
According to the invention, the N-type low-doped gallium nitride layer 7 is arranged between the barrier layer and the buffer layer, and as the sheet resistance of the layer is lower than that of the two-dimensional electron gas, under the normal on-state condition, the function of participating in conduction is very weak, but in the process from the off-state to the on-state, the electrons of the layer can supplement the reduction of the concentration of the two-dimensional electron gas; secondly, electrons transferred from the buffer layer back to the heterojunction interface can also rapidly pass through the buffer layer, so that the effect of rapidly supplementing two-dimensional electron gas of the heterojunction interface is achieved; by combining the factors, the concentration of the two-dimensional electron gas in the dynamic process can be reduced to the maximum extent, so that the radio frequency loss is reduced.
Further, the buffer layer is an HT-AlN/AlGaN buffer layer, and the HT-AlN/AlGaN buffer layer comprises a high-temperature aluminum nitride layer 2 growing on the substrate and a gradual-change aluminum gallium nitride layer growing on the high-temperature aluminum nitride layer 2; the gradual change AlGaN layer comprises three AlGaN layers with different aluminum components, namely a first AlGaN layer 3, a second AlGaN layer 4 and a third AlGaN layer 5. The HT-AlN/AlGaN buffer layer is used as a stress release layer and a device voltage-resistant layer, comprises a high-temperature aluminum nitride layer 2 and three aluminum gallium nitride layers with different aluminum components, and grows through a gradual change aluminum gallium nitride stress epitaxial structure.
Specifically, the thickness of the high-temperature aluminum nitride layer 2 is 100nm-200 nm; the aluminum component of the first aluminum gallium nitride layer 3 is 80 percent, and the thickness of the first aluminum gallium nitride layer is 100nm-400 nm; the aluminum composition of the second AlGaN layer 4 is 50%, and the thickness thereof is 400-800 nm; the third AlGaN layer 5 has an Al content of 20% and a thickness of 800nm-1200 nm.
Further, the thickness of the N-type low-doped gallium nitride layer is 10nm-20nm, and the carrier concentration is 1E 16/cm3-1*E18/cm3。
Further, the silicon substrate 1 is an 8-inch high-resistance silicon substrate 1; the barrier layer is an aluminum gallium nitrogen barrier layer 8, and the thickness of the barrier layer is 15nm-30 nm; the nitride cap layer is a gallium nitride cap layer 9 with a thickness of 1nm-5 nm.
Referring to fig. 2, the present invention relates to a method for preparing a low-loss gan rf epitaxial structure, which comprises the following steps:
s10, providing a silicon substrate, and cleaning the silicon substrate;
s20, putting the cleaned silicon substrate into MOCVD equipment for the epitaxial growth of the HT-AlN/AlGaN buffer layer;
s30, continuously epitaxially growing a gallium nitride channel layer on the HT-AlN/AlGaN buffer layer;
s40, continuously epitaxially growing an N-type low-doped gallium nitride layer on the gallium nitride channel layer;
s50, continuously epitaxially growing an AlGaN barrier layer on the N-type low-doped GaN layer;
and S60, finally, epitaxially growing a gallium nitride cap layer on the aluminum gallium nitrogen barrier layer to obtain the low-loss gallium nitride radio-frequency material epitaxial structure.
As shown in fig. 3, in the S20 step, the step of epitaxially growing the HT-AlN/AlGaN buffer layer includes:
s21, epitaxially growing a high-temperature aluminum nitride layer on the silicon substrate;
s22, epitaxially growing a first aluminum gallium nitride layer with 80% of aluminum component on the high-temperature aluminum nitride layer;
s23, epitaxially growing a second aluminum gallium nitride layer with aluminum component of 50% on the first aluminum gallium nitride layer;
and S24, epitaxially growing a third AlGaN layer with the aluminum component of 20% on the second AlGaN layer.
The invention will now be described in more detail with reference to specific examples, which should not be construed as limiting the scope of the invention.
Firstly, cleaning an 8-inch high-resistance silicon substrate; after cleaning, putting the high-resistance silicon substrate into MOCVD equipment for carrying out the epitaxial growth of an HT-AlN/AlGaN buffer layer, namely, firstly growing a 150nm high-temperature aluminum nitride layer on the high-resistance silicon substrate in the MOCVD equipment, growing a first aluminum gallium nitride layer with the thickness of 300nm and the aluminum component of 80% on the high-temperature aluminum nitride layer, growing a second aluminum gallium nitride layer with the thickness of 600nm and the aluminum component of 50% on the first aluminum gallium nitride layer, and growing a third aluminum gallium nitride layer with the thickness of 1000nm and the aluminum component of 20% on the second aluminum gallium nitride layer; then growing a 150nm gallium nitride channel layer on the third aluminum gallium nitride layer; then, a layer with the thickness of 15nm and the carrier concentration of 6 × E16/cm is grown on the gallium nitride channel layer3The N-type low-doped gallium nitride layer; then, an aluminum gallium nitrogen barrier layer with the thickness of 25nm and the aluminum component of 25% is grown on the N-type low-doped gallium nitride layer; and finally, growing a 2nm gallium nitride cap layer on the aluminum gallium nitrogen barrier layer. So far, the preparation of the gallium nitride radio frequency epitaxial material structure is completed, and the low temperature can be realizedThe radio frequency characteristics of the losses.
The above embodiments are merely illustrative of the preferred embodiments of the present invention, and not restrictive, and various changes and modifications to the technical solutions of the present invention may be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are intended to fall within the scope of the present invention defined by the appended claims.
Claims (10)
1. A low-loss GaN radio frequency material epitaxial structure, comprising:
a silicon substrate;
a buffer layer grown on the silicon substrate;
a gallium nitride channel layer grown on the buffer layer;
an N-type low-doped gallium nitride layer grown on the gallium nitride channel layer;
a barrier layer grown on the N-type low-doped gallium nitride layer;
an amide cap layer grown on the barrier layer.
2. The low-loss gallium nitride radio-frequency material epitaxial structure of claim 1, wherein: the buffer layer is an HT-AlN/AlGaN buffer layer, and the HT-AlN/AlGaN buffer layer comprises a high-temperature aluminum nitride layer growing on the substrate and a gradual-change aluminum gallium nitride layer growing on the high-temperature aluminum nitride layer.
3. The low-loss gallium nitride radio frequency material epitaxial structure of claim 2, wherein: the gradient AlGaN layer comprises three AlGaN layers with different aluminum components, namely a first AlGaN layer, a second AlGaN layer and a third AlGaN layer.
4. The low-loss gallium nitride radio frequency material epitaxial structure of claim 3, wherein: the aluminum component of the first aluminum gallium nitride layer is 80%, the aluminum component of the second aluminum gallium nitride layer is 50%, and the aluminum component of the third aluminum gallium nitride layer is 20%.
5. The low-loss gallium nitride radio frequency material epitaxial structure of claim 3, wherein: the thickness of the high-temperature aluminum nitride layer is 100nm-200 nm; the thickness of the first aluminum gallium nitrogen layer is 100nm-400 nm; the thickness of the second AlGaN layer is 400-800 nm; the thickness of the third aluminum gallium nitride layer is 800nm-1200 nm.
6. The low-loss gallium nitride radio-frequency material epitaxial structure of claim 1, wherein: the thickness of the N-type low-doped gallium nitride layer is 10nm-20nm, and the carrier concentration is 1 × E16/cm3-1*E18/cm3。
7. The low-loss gallium nitride radio-frequency material epitaxial structure of claim 1, wherein: the barrier layer is an aluminum gallium nitrogen barrier layer, and the thickness of the barrier layer is 15nm-30 nm.
8. The low-loss gallium nitride radio-frequency material epitaxial structure of claim 1, wherein: the nitride cap layer is a gallium nitride cap layer, and the thickness of the gallium nitride cap layer is 1nm-5 nm.
9. A preparation method of a low-loss gallium nitride radio-frequency material epitaxial structure is characterized by comprising the following steps:
providing a silicon substrate, and cleaning the silicon substrate;
putting the cleaned silicon substrate into MOCVD equipment to perform the epitaxial growth of an HT-AlN/AlGaN buffer layer;
continuously epitaxially growing a gallium nitride channel layer on the HT-AlN/AlGaN buffer layer;
continuously epitaxially growing an N-type low-doped gallium nitride layer on the gallium nitride channel layer;
continuously epitaxially growing an aluminum gallium nitrogen barrier layer on the N-type low-doped gallium nitride layer;
and finally, epitaxially growing a gallium nitride cap layer on the aluminum gallium nitrogen barrier layer to obtain the low-loss gallium nitride radio-frequency material epitaxial structure.
10. The method for preparing the low-loss gallium nitride radio-frequency material epitaxial structure according to claim 9, wherein the step of epitaxially growing the HT-AlN/AlGaN buffer layer comprises:
epitaxially growing a high-temperature aluminum nitride layer on the silicon substrate;
epitaxially growing a first aluminum gallium nitride layer with 80% of aluminum component on the high-temperature aluminum nitride layer;
epitaxially growing a second aluminum gallium nitride layer with 50% of aluminum component on the first aluminum gallium nitride layer;
and epitaxially growing a third aluminum gallium nitride layer with the aluminum component of 20% on the second aluminum gallium nitride layer.
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