CN112530918A - 具有集成电感器，电阻器和电容器的功率半导体封装 - Google Patents

具有集成电感器，电阻器和电容器的功率半导体封装 Download PDF

Info

Publication number
CN112530918A
CN112530918A CN202010917137.9A CN202010917137A CN112530918A CN 112530918 A CN112530918 A CN 112530918A CN 202010917137 A CN202010917137 A CN 202010917137A CN 112530918 A CN112530918 A CN 112530918A
Authority
CN
China
Prior art keywords
pad
power semiconductor
semiconductor package
side fet
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010917137.9A
Other languages
English (en)
Other versions
CN112530918B (zh
Inventor
张晓天
玛丽·简·R·阿琳
陈波
小大卫·布里安·奥拉博尼
王隆庆
印健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpha and Omega Semiconductor Cayman Ltd
Original Assignee
Alpha and Omega Semiconductor Cayman Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/575,193 external-priority patent/US20210082790A1/en
Application filed by Alpha and Omega Semiconductor Cayman Ltd filed Critical Alpha and Omega Semiconductor Cayman Ltd
Publication of CN112530918A publication Critical patent/CN112530918A/zh
Application granted granted Critical
Publication of CN112530918B publication Critical patent/CN112530918B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1205—Capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1206—Inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1207—Resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

一种功率半导体封装包括一个引线框、一个低端场效应晶体管(FET)、一个高端FET、一个电容器、一个电阻器、一个电感器组件、第一种多个接合引线以及一个模塑封装。在一个示例中，整个电感器组件放置在高于整个低端FET、高于整个高端FET以及高于整个第一种接合引线的位置上。在另一个示例中，低端FET的底面和电感器组件的底面是共面的。

Description

具有集成电感器，电阻器和电容器的功率半导体封装
技术领域
本发明主要涉及一种半导体封装及其制造方法。更确切地说，本发明涉及一种具有一个集成的电感器、一个集成的电容器以及一个集成的电阻器的驱动金属-氧化物-硅晶体管(DrMOS)。
背景技术
传统的DrMOS在DrMOS封装外部具有一个电感器。图2所示的Yin等人的美国专利号10、111和333，在DrMOS封装中具有一个集成的电感器、一个集成的电容器以及一个集成的电阻器。本发明没有使用金属夹片。在一个示例中，封装的尺寸从7毫米×7毫米×5毫米缩小至6毫米×6毫米×5毫米。电流从20-60安培降至小于10安培。
本发明所述的功率半导体封装包括一个控制器、两个场效应晶体管(FET)以及一个集成的电感器、一个集成的电容器以及一个集成的电阻器。由于集成了电感器，其优点包括更小的外形尺寸、更好的散热和更高的电效率。通过集成方法，针对驱动器和FET动态性能、系统电感和功率FET RDS(ON)，优化了完整的开关功率级。
发明内容
本发明提出了一种功率半导体封装，包括一个引线框、一个低端场效应晶体管(FET)、一个高端FET、一个电容器、一个电阻器、一个电感器组件、多个接合引线以及一个模塑封装。
在一个示例中，整个电感器组件都放置在高于整个低端FET、高于整个高端FET并且高于第一种多个接合引线的位置上。在另一个示例中，低端FET的底面和电感器组件的底面是共面的。
附图说明
图1表示在本发明的示例中，一种DrMOS的电路图。
图2A和图2B分别表示在本发明的示例中，功率半导体封装沿AA’线的俯视图和剖面图。
图3A和图3B分别表示在本发明的示例中，功率半导体封装沿BB’线的俯视图和剖面图。
具体实施方式
在本发明的示例中，图1表示一种DrMOS的电路图100。该DrMOS包括一个子封装102。子封装102包括一个控制器110、一个电感器130、一个低端FET 140、一个高端FET 150、多个电容器170以及多个电阻器180。
图2A和图2B分别表示在本发明的示例中，功率半导体封装200沿AA’线的俯视图和剖面图。该功率半导体封装200包括一个引线框220、一个低端场效应晶体管(FET)240、一个高端FET 250、一个电容器260、一个电阻器270、一个电感器组件280、第一种多个接合引线291以及一个模塑封装290。引线框220包括一个第一个芯片焊盘222、一个在第一个芯片焊盘222附近的第二个芯片焊盘224、一个在第一个芯片焊盘222和第二个芯片焊盘224附近的第一个末端焊盘226、以及一个在第一个芯片焊盘222和第二个芯片焊盘224附近但又通过第一个芯片焊盘222和第二个芯片焊盘224与第一个末端焊盘226分隔开的第二个末端焊盘228。第一个末端焊盘226电连接到第一个芯片焊盘222，并作为图1所示的开关节点VSWH端口126。第二个末端焊盘228与引线框的其他部分电绝缘，并作为图1所示的Vout端口128。第一个末端焊盘226和第二个末端焊盘228放置在高于第一个芯片焊盘222和第二个芯片焊盘224的位置上。
低端FET240具有一个底面漏极电极，连接到第一个芯片焊盘222上。低端FET 240包括一个源极电极240S和一个栅极电极240G，在低端FET 240的顶面上。高端FET 250具有一个底面漏极电极，连接到第二个芯片焊盘224上。高端FET 250包括一个源极电极250S和一个栅极电极250G，在高端FET的顶面上。第一种多个接合引线291将高端FET 250的顶面源极电极连接到第一个芯片焊盘222上。
引线框的第一引线231电连接到电感器组件280的第一端口上，并且堆栈在第一个芯片焊盘226上。引线框的第二引线241连接到电感器组件280的第二端口上，并且堆栈在第二个芯片焊盘228上。第一引线231包括一个第一升高部分233，在第一个芯片焊盘222和第二个芯片焊盘224上方。第二引线241包括一个第二升高部分243，在第一个芯片焊盘222和第二个芯片焊盘224上方。至少一部分第一升高部分233构成第一个芯片焊盘226，至少一部分第二升高部分243构成第二个芯片焊盘228。第一引线231的第一升高部分233通过第一导电材料235，电子地并机械地连接到电感器组件280上。第二引线241的第二升高部分243通过第二导电材料245，电子地并机械地连接到电感器组件280上。在一个示例中，第一导电材料235和第二导电材料245中的任何一种导电材料都是由动力冶金材料制成的。在另一个示例中，第一导电材料235和第二导电材料245中的任何一种导电材料都是由一种弹性体材料制成的。在本发明的示例中，第一升高部分233的高度至少比第一芯片焊盘222和第二芯片焊盘224高250微米。第二升高部分243的高度至少比第一芯片焊盘222和第二芯片焊盘224高250微米。如图所示，第一芯片焊盘226和第一引线231形成一个整体，第二模块焊盘228和第二引线241形成一个整体。还可选择，第一末端焊盘226和第二末端焊盘228可以分别通过堆叠在第一引线231和第二引线241的部分上的导电间隔物而形成(图中没有表示出)。
模塑封装290封装了低端FET 240、高端FET 250、第一种多个接合引线291、电容器260、电阻器270、电感器组件280、第一引线231的绝大部分、第二引线241的绝大部分以及引线框220的绝大部分。
在本发明的示例中，引线框220的底面暴露于模塑封装290。第一引线231的底面暴露于模塑封装290。第二引线241的底面暴露于模塑封装290。
在本发明的示例中，电感器组件280的整体都放置在高于低端FET 240的整体、高端FET250的整体以及第一种多个接合引线291的整体的位置上。
在本发明的示例中，功率半导体封装200还包括一个集成电路(IC)299，安装在第二个芯片焊盘224上。第二种多个接合引线298将IC 299连接到引线框220的多个引线上。模塑封装290封装了IC 299。
图3A和图3B分别表示在本发明的示例中，功率半导体封装300沿BB’线的俯视图和剖面图。
功率半导体封装300包括一个引线框320、一个低端场效应晶体管(FET)340、一个高端FET 350、一个电容器360、一个电阻器370、一个电感器组件380、第一种多个接合引线391以及模塑封装390。引线框320包括第一芯片焊盘322、在第一芯片焊盘322附近的第二芯片焊盘324，以及第一末端焊盘326第一芯片焊盘322。
低端FET 340具有一个底面漏极电极，连接到第一芯片焊盘322上。低端FET 340包括一个源极电极340S和一个栅极电极340G，在低端FET 340的顶面上。高端FET 350具有一个底面漏极电极，连接到第二芯片焊盘324上。高端FET 350包括一个源极电极350S和一个栅极电极350G，在高端FET的顶面上。第一种多个接合引线391将高端FET 350的顶面源极电极连接到第一芯片焊盘322上。
模塑封装390封装低端FET340、高端FET 350、第一种多个接合引线391、电容器360、电阻器370、电感器组件380以及引线框320的绝大部分。在本发明的示例中，引线框320的底面暴露于模塑封装390。
在本发明的示例中，低端FET 340的底面341以及电感器组件380的底面381是共面的。
电感器组件380的一个第一端口通过第一导电材料335，电子地并机械地连接到第一芯片焊盘322上。电感器组件的第二端口通过第二导电材料345，电子地并机械地连接到第一末端焊盘326上。在一个示例中，第一导电材料335和第二导电材料345中的任何一种导电材料都是由一种粉末冶金材料制成的。在另一个示例中，第一导电材料335和第二导电材料345中的任何一种导电材料都是由一种弹性体材料制成的。
在本发明的示例中，功率半导体封装300还包括一个安装在第二芯片焊盘324上的集成电路(IC)399。第二种多个接合引线398将IC 399连接到引线框320的多个引线上。模塑封装390封装了IC 399。
本领域的普通技术人员可以理解，本发明公开的实施例的修改是可能存在的。例如，第一升高部分233的高度以及第二升高部分243的高度可以有所不同。本领域普通技术人员还可以想到其他修改，并且所有这样的修改被认为属于本发明的范围之内，如同权利要求所限定的那样。

Claims (16)

1.一种功率半导体封装包括：
一个引线框，包括
一个第一芯片焊盘；
一个第二芯片焊盘；
一个第一末端焊盘；以及
一个第二末端焊盘，其中第一末端焊盘和第二末端焊盘设置在高于第一芯片焊盘和第二芯片焊盘的位置上；
一个低端场效应晶体管(FET)，其底面漏极电极连接到第一芯片焊盘上，低端FET包括一个源极电极和一个栅极电极，在低端FET的顶面上；
一个高端FET，其底面漏极电极连接到第二芯片焊盘上，高端FET包括一个源极电极和一个栅极电极，在高端FET的顶面上；
多个第一接合引线，将高端FET的顶面源极电极连接到第一芯片焊盘上；
一个电感器组件，包括一个第一端口和一个第二端口，第一端口堆栈在第一末端焊盘上，第二端口堆栈在第二末端焊盘上；
一个第一引线，连接到第一末端焊盘上；以及
一个第二引线，连接到第二末端焊盘上；以及
一个模塑封装，封装低端FET、高端FET、多个第一接合引线、电感器组件、第一引线的大部分、第二引线的大部分以及引线框的大部分。
2.权利要求1所述的功率半导体封装，其中第一引线包括一个第一升高部分，在第一芯片焊盘和第二芯片焊盘上方，第二引线包括一个第二升高部分，在第一芯片焊盘和第二芯片焊盘上方；其中至少一部分第一升高部分构成第一末端焊盘，至少一部分第二升高部分构成第二末端焊盘。
3.权利要求2所述的功率半导体封装，其中第一引线的第一升高部分通过第一导电材料，电子地并机械地连接到电感器组件；并且其中第二引线的第二升高部分通过第二导电材料，电子地并机械地连接到电感器组件。
4.权利要求3所述的功率半导体封装，其中第一导电材料和第二导电材料的任何一种导电材料都是由一种粉末冶金材料制成的。
5.权利要求3所述的功率半导体封装，其中第一导电材料和第二导电材料的任何一种导电材料都是由一种弹性体材料制成的。
6.权利要求3所述的功率半导体封装，其中引线框的底面暴露于模塑封装。
7.权利要求3所述的功率半导体封装，还包括一个安装在第二芯片焊盘上的集成电路(IC)，其中第二种多个接合引线将IC连接到引线框的多个引线上。
8.权利要求7所述的功率半导体封装，其中模塑封装封装了IC。
9.一种功率半导体封装包括：
一个引线框，包括
一个第一芯片焊盘；
一个第二芯片焊盘；
一个第一末端焊盘；以及
一个低端场效应晶体管(FET)，其底面漏极电极连接到第一芯片焊盘上，低端FET包括一个源极电极和一个栅极电极，在低端FET的顶面上；
一个高端FET，其底面漏极电极连接到第二芯片焊盘上，高端FET包括一个源极电极和一个栅极电极，在高端FET的顶面上；
多个第一接合引线，将高端FET的源极电极连接到第一芯片焊盘上；
一个电感器组件，电感器组件的第一端口连接到第二芯片焊盘上，电感器的第二端口连接到第一末端焊盘上；以及
一个模塑封装，封装低端FET、高端FET、多个第一接合引线、电感器组件、以及引线框的大部分。
10.权利要求9所述的功率半导体封装，其中低端FET的底面和电感器组件的底面是共面的。
11.权利要求9所述的功率半导体封装，其中电感器组件的第一端口通过第一导电材料，电子地并机械地连接到第一芯片焊盘上；并且其中电感器组件的第二端口通过第二导电材料，电子地并机械地连接到第一末端焊盘上。
12.权利要求11所述的功率半导体封装，其中第一导电材料和第二导电材料中的任何一种导电材料都是由一种粉末冶金材料制成的。
13.权利要求11所述的功率半导体封装，其中第一导电材料和第二导电材料中的任何一种导电材料都是由一种弹性体材料制成的。
14.权利要求11所述的功率半导体封装，其中引线框的底面暴露于模塑封装。
15.权利要求11所述的功率半导体封装，还包括一个安装在第一芯片焊盘上的集成电路(IC)，其中多个第二接合引线将IC连接到引线框的多个引线上。
16.权利要求15所述的功率半导体封装，其中模塑封装封装了IC。
CN202010917137.9A 2019-09-18 2020-09-03 具有集成电感器，电阻器和电容器的功率半导体封装 Active CN112530918B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16/575,193 2019-09-18
US16/575,193 US20210082790A1 (en) 2019-09-18 2019-09-18 Power semiconductor package having integrated inductor and method of making the same
US16/801,023 2020-02-25
US16/801,023 US11309233B2 (en) 2019-09-18 2020-02-25 Power semiconductor package having integrated inductor, resistor and capacitor

Publications (2)

Publication Number Publication Date
CN112530918A true CN112530918A (zh) 2021-03-19
CN112530918B CN112530918B (zh) 2024-05-31

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112530917A (zh) * 2019-09-18 2021-03-19 万国半导体国际有限合伙公司 具有集成电感器的功率半导体封装及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007137221A2 (en) * 2006-05-19 2007-11-29 Fairchild Semiconductor Corporation Dual side cooling integrated transistor module and methods of manufacture
US20080237777A1 (en) * 2007-03-27 2008-10-02 Alpha & Omega Semiconductor, Ltd Completely decoupled high voltage and low voltage transistor manufacurting processes
CN102254908A (zh) * 2010-03-16 2011-11-23 英特赛尔美国股份有限公司 具有位于其它元件上方的桥式电感器的组件化电源模块
CN102610608A (zh) * 2011-01-19 2012-07-25 万国半导体股份有限公司 集成一个电容的金属氧化物半导体场效应晶体管
CN106252334A (zh) * 2015-06-09 2016-12-21 英飞凌科技美国公司 具有嵌入式输出电感器的半导体封装体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007137221A2 (en) * 2006-05-19 2007-11-29 Fairchild Semiconductor Corporation Dual side cooling integrated transistor module and methods of manufacture
US20080237777A1 (en) * 2007-03-27 2008-10-02 Alpha & Omega Semiconductor, Ltd Completely decoupled high voltage and low voltage transistor manufacurting processes
CN102254908A (zh) * 2010-03-16 2011-11-23 英特赛尔美国股份有限公司 具有位于其它元件上方的桥式电感器的组件化电源模块
CN102610608A (zh) * 2011-01-19 2012-07-25 万国半导体股份有限公司 集成一个电容的金属氧化物半导体场效应晶体管
CN106252334A (zh) * 2015-06-09 2016-12-21 英飞凌科技美国公司 具有嵌入式输出电感器的半导体封装体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112530917A (zh) * 2019-09-18 2021-03-19 万国半导体国际有限合伙公司 具有集成电感器的功率半导体封装及其制造方法

Also Published As

Publication number Publication date
TWI767825B (zh) 2022-06-11
TW202125731A (zh) 2021-07-01
US20210082793A1 (en) 2021-03-18
TWI751678B (zh) 2022-01-01
US11309233B2 (en) 2022-04-19
TW202147541A (zh) 2021-12-16

Similar Documents

Publication Publication Date Title
US7145224B2 (en) Semiconductor device
US7776658B2 (en) Compact co-packaged semiconductor dies with elevation-adaptive interconnection plates
US7227198B2 (en) Half-bridge package
KR101086751B1 (ko) 반도체 장치 및 전원 시스템
US8148815B2 (en) Stacked field effect transistor configurations
US7615854B2 (en) Semiconductor package that includes stacked semiconductor die
US9543240B2 (en) DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
CN107958901B (zh) 模压智能电源模块
CN104603948A (zh) 垂直堆叠的功率fet和具有低导通电阻的同步降压转换器
US8476752B2 (en) Package structure for DC-DC converter
US10600727B2 (en) Molded intelligent power module for motors
CN112530917A (zh) 具有集成电感器的功率半导体封装及其制造方法
TWI751678B (zh) 具有集成電感器，電阻器和電容器的功率半導體封裝
CN112530918B (zh) 具有集成电感器，电阻器和电容器的功率半导体封装
US11227819B2 (en) Cascode semiconductor device and method of manufacture
JP3583382B2 (ja) 半導体ダイの実装構造
US20200203259A1 (en) Integrated circuit package
CN116779576A (zh) 一种半导体组件及半导体器件
CN115863296A (zh) 具有增强的器件隔离的半导体封装和引线框架

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant