CN112510085A - IGBT device and intelligent power module - Google Patents
IGBT device and intelligent power module Download PDFInfo
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- 238000010586 diagram Methods 0.000 description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Abstract
The application discloses IGBT device and intelligent power module. The IGBT device includes: the collector, the drift region, the emitter and the grid are sequentially stacked along the first direction, and the projection of the grid on the collector is positioned in or partially overlapped with the projection of the emitter on the collector, so that the emitter is separated from the collector and the grid. By the mode, the Miller capacitance of the IGBT device can be reduced, and further the switching loss is reduced.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to an IGBT device and an intelligent power module.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a Bipolar Transistor (BJT) and an Insulated Gate field effect Transistor (MOSFET), and has the advantages of high input impedance of the MOSFET device and low conduction voltage drop of a power Transistor.
As shown in the cross-sectional structure diagram of the IGBT shown in fig. 1, a collector-emitter capacitance is equivalently present between the collector 101 and the emitter 102 of the IGBT, a gate-emitter capacitance is equivalently present between the emitter 102 and the gate 103, and a gate-collector capacitance, that is, a miller capacitance, is equivalently present between the collector 101 and the gate 103. During the charging phase of the gate 103 to the gate-emitter capacitance and the miller capacitance, the IGBT starts to conduct, the collector 101 current starts to increase and reach the maximum load current, while the gate 103 voltage also reaches and maintains the miller voltage plateau.
Due to the miller capacitance, the voltage of the gate 103 is maintained at the miller voltage level for a period of time during the turn-on process of the IGBT, during which the switching loss of the IGBT is relatively large.
Disclosure of Invention
The technical problem that this application mainly solved is how to reduce the miller electric capacity of IGBT device, reduces switching loss.
In order to solve the technical problem, the application adopts a technical scheme that: an IGBT device is provided. The IGBT device includes: the collector, the drift region, the emitter and the grid are sequentially stacked along the first direction, and the projection of the grid on the collector is positioned in or partially overlapped with the projection of the emitter on the collector, so that the emitter is separated from the collector and the grid.
In order to solve the above technical problem, another technical solution adopted by the present application is: an intelligent power module is provided. The intelligent power module is integrated with an IGBT device and a drive control circuit thereof, and the IGBT device is the IGBT device.
The beneficial effects of the embodiment of the application are that: the IGBT device of this application includes: the collector, the drift region, the emitter and the grid are sequentially stacked along the first direction, and the projection of the grid on the collector is positioned in or partially overlapped with the projection of the emitter on the collector, so that the emitter is separated from the collector and the grid. The IGBT device of the embodiment of the application sets up the emitting electrode between grid and collecting electrode, can carry out the potential shielding to grid and collecting electrode through the emitting electrode, set up shielding electrode promptly between two electrodes of miller electric capacity, can reduce miller electric capacity through shielding electrode to shorten the charge time of miller electric capacity, thereby can shorten the switching loss of IGBT device at the miller platform, and then can reduce the switching loss of IGBT device.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a conventional IGBT device;
FIG. 2 is a schematic structural diagram of an embodiment of an IGBT device of the present application;
FIG. 3 is a schematic structural diagram of an embodiment of an IGBT device of the present application;
FIG. 4 is a schematic structural diagram of an embodiment of an IGBT device of the present application;
fig. 5 is a schematic structural diagram of an embodiment of the smart power module of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive step are within the scope of the present application.
The Miller capacitance is one of key parameters influencing the turn-on loss of the IGBT device; when the IGBT device is switched on, the length of time of the IGBT device on the Miller platform is influenced by the size of the Miller capacitor, and the longer the corresponding time of the Miller platform is, the larger the switching loss of the IGBT device is; reducing the miller capacitance is one of the important ways to reduce the turn-on loss of the IGBT device.
According to the technical scheme, the Miller capacitance of the IGBT device can be reduced, and then the switching loss can be reduced.
The application firstly provides an IGBT device, as shown in fig. 2, fig. 2 is a schematic structural diagram of an embodiment of the IGBT device of the application. The IGBT device 10 of the present embodiment includes: collector 110, drift region 120, emitter 130 and gate 140 are stacked in this order along a first direction, and a projection of gate 140 on collector 110 is located within or partially overlaps a projection of emitter 130 on collector 110, so that emitter 130 is spaced apart from collector 110 and gate 140.
The turn-on process of the IGBT device 10 is as follows: the first stage is as follows: the gate 140 current charges the gate-emitter capacitance, the gate 140 voltage rises to a first voltage, and at this stage, the collector 110 is currentless and the collector 110 voltage does not change, i.e. the stage time is the dead time, and the gate 140 current charges only the gate-emitter capacitance; and a second stage: the gate 140 current charges the gate-emitter capacitance and the miller capacitance, at which stage the IGBT device 10 begins to turn on, the collector 110 current begins to increase and reach the maximum load current, while the gate 140 voltage also reaches and is maintained at the miller voltage plateau; and a third stage: the gate 140 current continues to charge the gate-emitter capacitance and the first voltage begins to ramp up and the entire IGBT device 10 is fully on.
It can be seen that, in the second stage, that is, the IGBT device 10 starts to be turned on, the voltage of the gate 140 is maintained at the miller voltage level to charge the miller capacitance, so that the miller capacitance is reduced, the time of the gate 140 voltage at the miller voltage level can be shortened, and the IGBT device 10 can rapidly enter the third stage to achieve rapid turn-on.
Different from the prior art, in the IGBT device 10 of the present embodiment, the emitter 130 is disposed between the gate 140 and the collector 110, and the gate 140 and the collector 110 can be potential-shielded by the emitter 130, that is, the shielding electrode is disposed between two electrodes of the miller capacitance, so that the miller capacitance can be reduced by the shielding electrode, the charging time of the miller capacitance can be shortened, the switching loss of the IGBT device 10 on the miller platform can be shortened, and the switching loss of the IGBT device 10 can be reduced.
Further, when the IGBT device 10 is turned off, the holes in the drift region 120 are mainly annihilated by being recombined with the electrons in the drift region 120, thereby achieving the turn-off of the IGBT device 10.
Optionally, the emitter 130 of the present embodiment includes: the drift region 120, the first body region 131, the emitter region 133 and the emitter electrode 134 are sequentially arranged in a contact manner along a second direction, the second body region 132 and the emitter region 133 are arranged in a contact manner along the first direction, the second body region 132 is respectively arranged in a contact manner with the first body region 131 and the emitter electrode 134, and the gate 140 is arranged on one side of the first body region 131 and the emitter region 133, which is far away from the collector electrode 110, so that the first body region 131, the emitter region 133 and the second body region 132 are separated from the collector electrode 110 and the gate 140; wherein the second direction is perpendicular to the first direction.
The drift region 120, the first body region 131, the emitter region 133 and the emitter electrode 134 are sequentially arranged in a contact manner along the second direction, which means that the drift region 120, the first body region 131, the emitter region 133 and the emitter electrode 134 are sequentially arranged along the second direction, and are sequentially in direct contact or in indirect contact through a conductive layer along the second direction; the second body region 132 and the emission region 133 are arranged in the first direction and are in direct contact or indirect contact through a conductive layer in the first direction.
The second body region 132 is in direct contact with the first body region 131 and the emitter electrode 134, respectively, or in indirect contact through a conductive layer.
The emitter 130 of the present embodiment includes a first body region 131 and a second body region 132, the first body region 131 being in electrical contact with the emitter electrode 134 through the second body region 132; and the doping concentration of the second body region 132 is greater than the doping concentration of the first body region 131.
By providing the second body region 132 in this embodiment, a minority carrier extraction channel can be provided when the IGBT device 10 is turned off, so that the turn-off speed of the IGBT device 10 can be increased.
Of course, in other embodiments, the second body region may not be provided, and only the first body region may be provided, to simplify the process.
The drift region 120, the first body region 131, the emitter region 133 and the emitter electrode 134 of the present embodiment are sequentially arranged in a contact manner along the second direction, so that when the IGBT device 10 is turned on, the formed conduction channel is firstly conducted to the drift region 120 along the second direction and then conducted to the collector electrode 110 along the first direction.
Further, the second body region 132 can isolate the emitter region 133 from the second interlayer insulating layer 110.
Optionally, the gate 140 of this embodiment includes: a gate electrode 141 and a gate insulating layer 142; wherein, the projection of the gate electrode 141 on the collector electrode 110 is located in the projection of the first body region 131 and the emitter region 133 on the collector electrode 110 or partially overlapped; the gate electrode 141 is disposed on the gate insulating layer 142, and the gate insulating layer 142 is in contact with the first body region 131 and the emitter region 133, respectively.
The gate insulating layer 142 is in direct contact with the first body region 131 and the emission region 133, respectively, or in indirect contact with a conductive layer.
The gate insulating layer 142 may be an oxide layer, for example, when the IGBT device is made of a silicon wafer, the gate insulating layer 142 may be SiO2The layer, gate electrode 141, may be made of polysilicon.
The gate electrode 141 of the present embodiment is disposed on the gate insulating layer 142, i.e., disposed on the same layer as the gate insulating layer 142, and the gate electrode 141 is disposed near a side of the gate insulating layer 142 away from the first body region 131 and the emitter region 133, so as to expose the gate electrode 141 from a side of the gate insulating layer 142 away from the first body region 131 and the emitter region 133; this structure facilitates the extraction of the gate electrode 141.
In other embodiments, the gate electrode may be embedded in the gate insulating layer, that is, the gate electrode is surrounded by the gate insulating layer, so that the short channel effect can be improved.
Optionally, the emitter electrode 134 of the present embodiment further extends to the gate insulating layer 142, and contacts the gate insulating layer 142 along the second direction.
The emitter electrode 134 is in direct contact with the gate insulating layer 142 or in indirect contact through a conductive layer.
In this embodiment, the emitter electrode 134 further extends to the gate insulating layer 142, so that the emitter electrode 134 and the gate insulating layer 142 are led out at the same side, and the structure is simplified.
Of course, in another embodiment, as shown in fig. 3, fig. 3 is a schematic structural diagram of an embodiment of the IGBT of the present application. The IGBT device 10 of the present embodiment differs from the IGBT device 10 of the embodiment of fig. 2 in that: the gate 140 further extends to a side of the emitter electrode 134 facing away from the collector 110, i.e. the first body region 131, the second body region 132, the emitter region 133 and the emitter electrode 134 are all located between the gate 140 and the collector 110.
Therein, the projection of the gate electrode 141 on the collector electrode 110 may coincide or partially coincide with the projections of the first body region 131 and the emitter region 133 on the collector electrode 110.
Optionally, with continued reference to fig. 2, the drift region 120 of the present embodiment further extends between the collector 110 and the emitter 130 to space the collector 110 and the emitter 130.
Further, the turn-on characteristic is one of the key parameters affecting the on-state loss of the IGBT device 10, and the turn-on resistance is reduced, which can effectively reduce the turn-on loss.
For this reason, the IGBT device 10 of the present embodiment further includes: a first semiconductor region 151 and a first oxide layer 152; wherein the first semiconductor region 151 is disposed between the emitter 130 and the drift region 120 along the first direction; the first oxide layer 152 is disposed between the first semiconductor region 151 and the drift region 120, and the first oxide layer 152 is in contact with the first semiconductor region 151 and the drift region 120, respectively.
The first oxide layer 152 is in direct contact with the first semiconductor region 151 and the drift region 120, or in indirect contact with the first semiconductor region and the drift region through a conductive layer.
The first semiconductor region 151 of the present embodiment is also in direct contact with the second body region 132 and the emitter electrode 134 or in indirect contact through a conductive layer; the first oxide layer 152 is also in direct contact with the second body region 132 and the first body region 131 or in indirect contact through a conductive layer.
In other embodiments, the first oxide layer may also extend between the emitter electrode 134 and the first semiconductor region 151.
The first semiconductor region 151 and the first oxide layer 152 of this embodiment form a first field plate structure, which can modulate the electric field of the drift region 120, and optimize the electric field and concentration distribution of the drift region 120, so that the on-resistance of the IGBT device 10 can be effectively reduced while ensuring the withstand voltage, thereby reducing the switching loss.
Optionally, the IGBT device 10 of the present embodiment further includes: a second semiconductor region 161 and a second oxide layer 162; wherein the second semiconductor region 161 is disposed on a side of the collector 110 close to the drift region 120, and the drift region 120 further extends to between the second semiconductor region 161 and the collector 110; the second oxide layer 162 is disposed between the second semiconductor region 161 and the drift region 120, and is in contact with the second semiconductor region 161 and the drift region 120, respectively.
Wherein the second oxide layer 162 is in direct contact with the second semiconductor region 161 and the drift region 120, respectively, or in indirect contact through a conductive layer.
When the IGBT device 10 is made of a silicon wafer, the first oxide layer 152 and the second oxide layer 162 may be SiO2 layers, and the first semiconductor region 151 and the second semiconductor region 161 may be made of polysilicon.
The drift region 120 further spaces the second oxide layer 162 from the collector 110.
Further, the second oxide layer 162 of the present embodiment is also in direct contact with the gate insulating layer 142 or in indirect contact through the conductive layer to reduce the size of the IGBT device 10 in the second direction.
The second semiconductor region 161 and the second oxide layer 162 of this embodiment form a second field plate structure, which can perform an electric field modulation effect on the drift region 120, and can optimize the electric field and the concentration distribution of the drift region 120, so that the on-resistance of the IGBT device 10 can be effectively reduced on the premise of ensuring the withstand voltage, and the switching loss can be further reduced.
Further, in the present embodiment, the first field plate structure and the second field plate structure are adopted to perform electric field modulation on the drift region 120 at different positions, and the electric field and the concentration distribution of the drift region 120 can be optimized to the optimal state through the matching modulation of the first field plate and the second field plate, so that the on-resistance is effectively reduced on the premise of ensuring the withstand voltage.
The number of the plate field structures of the IGBT device can be selected according to the performance requirement and the structural process requirement of the IGBT device; for example, in order to simplify the structure and process of the IGBT device, one or none of the field plate structures may be provided; in order to further improve the voltage withstanding performance of the IGBT device, more than two field plate structures can be arranged.
In another embodiment, as shown in fig. 4, fig. 4 is a schematic structural diagram of an embodiment of the IGBT device of the present application, and the difference between the IGBT device of the present application and the IGBT device 10 is that: the dimension of the gate insulating layer 142 of the present embodiment in the second direction is smaller than the dimension of the collector 110 in the second direction.
This structure can extend the drift region 120 to the gate insulating layer 142 and contact the gate insulating layer 142 directly along the second direction or indirectly through the conductive layer, which can increase the effective length of the drift region 120 and increase the voltage endurance of the IGBT device 10.
Optionally, with continuing reference to fig. 2, the IGBT device 10 of the present embodiment further includes a buffer layer 170, and the collector 110 includes: a collector electrode 111 and a collector region 112; the collector region 112 is disposed between the collector electrode 111 and the buffer layer 170, and is in contact with the collector electrode 111 and the buffer layer 170, respectively, and the buffer layer 170 is disposed between the drift region 120 and the collector region 112, and is further in contact with the drift region 120.
Wherein, the collector region 112 is in direct contact with the collector electrode 111 and the buffer layer 170 respectively or in indirect contact with the buffer layer through a conductive layer; the buffer layer 170 is in direct contact with the drift region 120 or in indirect contact through a conductive layer.
Further, the first body region 131 has a first doping type, the emitter region 133 has a second doping type, the doping type of the second body region 132 and the doping type of the collector region 112 are the same as the doping type of the first body region 131, the doping type of the drift region 120 and the doping type of the buffer region 170 are the same as the doping type of the emitter region 134, the doping concentration of the second body region 132 is greater than the doping concentration of the first body region 131, the doping concentration of the drift region 120 is less than the doping concentration of the buffer region, and the doping concentration of the emitter region 134 is greater than the doping concentration of the buffer region.
Specifically, the first doping type of this embodiment is P-type doping, and the second doping type is N-type doping, that is, the semiconductor structure of the IGBT device 10 is composed of an N-type doped drift region, an N-type doped emitter region, an N-type doped buffer region, a P-type doped first body region, a P-type doped second body region, and a P-type doped collector region. The semiconductor structure of the IGBT device 10 of the present embodiment is an NPN structure, and when the IGBT device 10 is turned on, an N channel is formed.
Specifically, when the IGBT device 10 is turned on, the minority carrier injected by the emitter electrode 134 is a hole, and the minority carrier injected by the collector electrode 111 is an electron; when the voltage applied to the gate electrode 141 is greater than the threshold voltage, the emitter electrode 134 injects high-concentration electrons into the N-type doped drift region through the N-type doped emitter region, the P-type doped first body region and the P-type doped second body region, and forms electron current through the N-type doped buffer region and the P-type doped collector region; meanwhile, the collector electrode 111 injects high-concentration holes into the N-type doped drift region through the P-type doped collector region and the N-type doped buffer region, and combines with high-concentration electrons in the N-type doped drift region to form a hole current. The sum of the electron current and the hole current constitutes the saturation current capability of the IGBT device 10.
Further, the doping concentration of the P-type doped second body region is greater than that of the P-type doped first body region, so that a minority carrier extraction channel can be provided when the IGBT device 10 is turned off, and the turn-off speed of the IGBT device 10 can be increased.
In another embodiment, the first doping type is P-type doping, and the second doping type is N-type doping, i.e. the semiconductor structure is composed of a P-type doped drift region, a P-type doped emitter region, a P-type doped buffer region, an N-type doped first body region, an N-type doped second body region, and an N-type doped collector region. The semiconductor structure of the IGBT device 10 of the present embodiment is a PNP structure, and when the IGBT device 10 is turned on, a P channel is formed; specifically, when the IGBT device is turned on, the minority carrier injected by the emitter electrode is an electron, and the minority carrier injected by the collector electrode is a hole; when the voltage applied to the gate electrode is greater than the threshold voltage, the emitter injects high-concentration holes into the P-type doped drift region through the P-type doped emitter region, the N-type doped first body region and the N-type doped second body region, and the holes are formed through the P-type doped buffer region and the N-type doped collector region; meanwhile, the collector injects high-concentration electrons into the P-type doped drift region through the N-type doped collector region and the P-type doped buffer region, and the high-concentration electrons are combined with high-concentration holes in the P-type doped drift region to form hole current. The sum of the electron current and the hole current constitutes the saturation current capability of the IGBT device.
It should be noted that the shapes and positions of the semiconductor structures and the electrode structures of the layers of the IGBT device according to the embodiments of the present application may be appropriately changed according to the specific product design.
The present application further provides an intelligent power module, as shown in fig. 5, fig. 5 is a schematic structural diagram of an embodiment of the intelligent power module of the present application. The smart power module 50 of the present embodiment includes: the IGBT device 10 and its drive control circuit 51, the IGBT device 10 operating under drive control of the drive control circuit 51. Here, the IGBT device 10 is the IGBT device 10 according to the above embodiment, and details are not described here.
The intelligent power module is a semiconductor device consisting of a high-speed low-power-consumption IGBT, a grid drive circuit and a corresponding protection circuit, and has the advantages of high current density, low saturation voltage and high voltage resistance of a high-power transistor, and the advantages of high input impedance, high switching frequency and low driving power of a field effect transistor. The intelligent power module is internally integrated with a logic, control, detection and protection circuit, so that the intelligent power module is convenient to use, the volume and development time of the system are reduced, and the reliability of the system is greatly enhanced; the intelligent power module can be used in the fields of household appliances, rail transit, power systems and the like.
Be different from prior art, this application IGBT device includes: the collector, the drift region, the emitter and the grid are sequentially stacked along the first direction, and the projection of the grid on the collector is positioned in or partially overlapped with the projection of the emitter on the collector, so that the emitter is separated from the collector and the grid. The IGBT device of the embodiment of the application sets up the emitting electrode between grid and collecting electrode, can carry out the potential shielding to grid and collecting electrode through the emitting electrode, set up shielding electrode promptly between two electrodes of miller electric capacity, can reduce miller electric capacity through shielding electrode to shorten the charge time of miller electric capacity, thereby can shorten the switching loss of IGBT device at the miller platform, and then can reduce the switching loss of IGBT device.
Furthermore, the emitter of the embodiment of the application is provided with the second body region, and the doping concentration of the second body region is greater than that of the first body region, so that a minority carrier extraction channel can be provided when the IGBT device is turned off, and the turn-off speed of the IGBT device can be increased.
Further, the first field plate structure is formed by the first semiconductor region and the first oxide layer, an electric field modulation effect can be performed on the drift region, an electric field and concentration distribution of the drift region can be optimized, and therefore on-resistance of the IGBT device can be effectively reduced on the premise that withstand voltage is guaranteed, and switching loss is further reduced.
Furthermore, the second field plate structure is formed by the second semiconductor region and the second oxide layer in the embodiment of the application, so that an electric field modulation effect can be performed on the drift region, and the electric field and concentration distribution of the drift region can be optimized, so that the on-resistance of the IGBT device can be effectively reduced on the premise of ensuring the withstand voltage, and the switching loss can be further reduced; and the first field plate structure and the second field plate structure are adopted to respectively carry out electric field modulation on the drift region at different positions, and the electric field and the concentration distribution of the drift region can be optimized to the optimal state through the matched modulation of the first field plate and the second field plate, so that the on-resistance is effectively reduced on the premise of ensuring the withstand voltage.
Furthermore, in the embodiment of the application, the drift region extends to the gate insulating layer and is in direct contact with the gate insulating layer along the second direction or in indirect contact with the gate insulating layer through the conducting layer, so that the effective length of the drift region can be increased, and the voltage withstanding performance of the IGBT device can be improved.
The above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all equivalent mechanisms or equivalent processes performed by the present application and the contents of the appended drawings, or directly or indirectly applied to other related technical fields, are all included in the scope of the present application.
Claims (10)
1. An IGBT device, characterized in that the IGBT device comprises: the emitter comprises a collector, a drift region, an emitter and a grid which are sequentially stacked along a first direction, wherein the projection of the grid on the collector is positioned in the projection of the emitter on the collector or partially overlapped, so that the emitter is spaced from the collector and the grid.
2. The IGBT device of claim 1, wherein the emitter comprises: the drift region, the first body region, the emitter region and the emitter electrode are sequentially arranged in a contact manner along a second direction, the second body region and the emitter region are arranged in a contact manner along the first direction, the second body region is respectively contacted with the first body region and the emitter electrode, and the grid electrode is arranged on one side of the first body region and the emitter region, which is far away from the collector electrode, so that the first body region, the emitter region and the second body region separate the collector electrode from the grid electrode;
wherein the second direction is perpendicular to the first direction.
3. The IGBT device of claim 2, wherein the gate comprises:
a gate electrode, wherein the projection of the gate electrode on the collector electrode is positioned in or partially overlapped with the projection of the first body region and the projection of the emitter region on the collector electrode;
and the gate electrode is arranged on the gate insulating layer, and the gate insulating layer is respectively contacted with the first body region and the emitter region.
4. The IGBT device according to claim 3, wherein the emitter electrode further extends to the gate insulating layer and is in contact with the gate insulating layer in the second direction.
5. The IGBT device of claim 1, further comprising:
a first semiconductor region disposed between the emitter and the drift region along the first direction;
and a first oxide layer disposed between the first semiconductor region and the drift region and in contact with the first semiconductor region and the drift region, respectively.
6. The IGBT device of claim 1, further comprising:
a second semiconductor region provided on a side of the collector electrode close to the drift region;
a second oxide layer disposed between the second semiconductor region and the drift region and in contact with the second semiconductor region and the drift region, respectively.
7. The IGBT device according to any one of claims 2 to 6, further comprising a buffer layer, the collector electrode comprising:
a collector electrode;
and a collector region disposed between the collector electrode and the buffer layer and in contact with the collector electrode and the buffer layer, respectively, wherein the buffer layer is disposed between the drift region and the collector region and further in contact with the drift region.
8. The IGBT device of claim 7, wherein the first body region has a first doping type, the emitter region has a second doping type, the second body region, the collector region and the first body region have the same doping type, the drift region, the buffer region and the emitter region have the same doping type, and the doping concentration of the second body region is greater than the doping concentration of the first body region.
9. The IGBT device according to any one of claims 2 to 6, wherein a dimension of the gate insulating layer in the second direction is smaller than a dimension of the collector in the second direction.
10. A smart power module, comprising: an IGBT device according to any one of claims 1 to 9 and a drive control circuit thereof.
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