CN112510086B - IGBT device and intelligent power module - Google Patents
IGBT device and intelligent power module Download PDFInfo
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- 230000004044 response Effects 0.000 claims abstract description 6
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- 239000004065 semiconductor Substances 0.000 description 17
- 230000005684 electric field Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
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- 238000010586 diagram Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
The application discloses IGBT device and intelligent power module. The IGBT device includes: sequentially stacking a collector, a drift region, an emitter and a grid along a first direction; the projection of the grid electrode on the collector electrode is positioned in the projection of the emitter electrode on the collector electrode, so that the emitter electrode is separated from the collector electrode and the grid electrode; wherein, in response to the IGBT turning on, a side of the emitter near the gate forms a conductive channel extending in a first direction towards a side facing away from the collector. By the mode, the Miller capacitance of the IGBT device can be reduced, the switching loss is further reduced, and the voltage withstanding capability of the IGBT device can be improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to an IGBT device and an intelligent power module.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a Bipolar Transistor (BJT) and an Insulated Gate field effect Transistor (MOSFET), and has the advantages of high input impedance of the MOSFET device and low conduction voltage drop of a power Transistor.
As shown in the cross-sectional structure diagram of the IGBT shown in fig. 1, a collector-emitter capacitance is equivalently present between the collector 101 and the emitter 102 of the IGBT, a gate-emitter capacitance is equivalently present between the emitter 102 and the gate 103, and a gate-collector capacitance, that is, a miller capacitance is equivalently present between the collector 101 and the gate 103. During the charging phase of the gate 103 to the gate-emitter capacitance and the miller capacitance, the IGBT starts to conduct, the collector 101 current starts to increase and reach the maximum load current, while the gate 103 voltage also reaches and maintains the miller voltage plateau.
Due to the miller capacitance, the voltage of the gate 103 is maintained at the miller voltage level for a period of time during the turn-on process of the IGBT, during which the switching loss of the IGBT is relatively large.
Disclosure of Invention
The technical problem that this application mainly solved is how to reduce the miller electric capacity of IGBT device, reduces switching loss to improve the voltage resistance of IGBT device.
In order to solve the technical problem, the application adopts a technical scheme that: an IGBT device is provided. The IGBT device includes: sequentially stacking a collector, a drift region, an emitter and a grid along a first direction; the projection of the grid electrode on the collector electrode is positioned in the projection of the emitter electrode on the collector electrode, so that the emitter electrode is separated from the collector electrode and the grid electrode; wherein, in response to the IGBT turning on, a side of the emitter near the gate forms a conductive channel extending in a first direction towards a side facing away from the collector.
In order to solve the above technical problem, another technical solution adopted by the present application is: an intelligent power module is provided. The intelligent power module is integrated with an IGBT device and a drive control circuit thereof, and the IGBT device is the IGBT device.
The beneficial effects of the embodiment of the application are that: the IGBT device of this application includes: sequentially stacking a collector, a drift region, an emitter and a grid along a first direction; the projection of the grid electrode on the collector electrode is positioned in the projection of the emitter electrode on the collector electrode, so that the emitter electrode is separated from the collector electrode and the grid electrode; wherein, in response to the IGBT turning on, a side of the emitter near the gate forms a conductive channel extending in a first direction towards a side facing away from the collector. According to the IGBT device, the emitter is arranged between the grid electrode and the collector electrode, the grid electrode and the collector electrode can be subjected to potential shielding through the emitter, namely the shielding electrode is arranged between the two electrodes of the Miller capacitor, the Miller capacitor can be reduced through the shielding electrode, the charging time of the Miller capacitor is shortened, the switching loss of the IGBT device on a Miller platform can be reduced, and the switching loss of the IGBT device can be reduced; meanwhile, when the IGBT device is conducted, the conducting channel formed on one side, close to the grid electrode, of the emitting electrode extends towards one side, away from the collecting electrode, along the first direction, so that the conducting channel of the IGBT device extends towards one side, away from the collecting electrode, along the first direction firstly, and then extends to the collecting electrode from the emitting electrode, the length of the conducting channel can be effectively increased, and therefore the voltage resistance of the IGBT device can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a conventional IGBT device;
FIG. 2 is a schematic structural diagram of an embodiment of an IGBT device of the present application;
fig. 3 is a schematic structural diagram of an embodiment of the IGBT device of the present application;
FIG. 4 is a schematic process structure diagram of an embodiment of the IGBT device of the present application;
FIG. 5 is a schematic process structure diagram of an embodiment of the IGBT device of the present application;
FIG. 6 is a schematic process structure diagram of an embodiment of the IGBT device of the present application;
fig. 7 is a schematic structural diagram of an embodiment of the smart power module of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples of the present application, not all examples, and all other examples obtained by a person of ordinary skill in the art without making any creative effort fall within the protection scope of the present application.
The Miller capacitance is one of key parameters influencing the turn-on loss of the IGBT device; when the IGBT device is switched on, the length of time of the IGBT device on the Miller platform is influenced by the size of the Miller capacitor, and the longer the corresponding time of the Miller platform is, the larger the switching loss of the IGBT device is; reducing the miller capacitance is one of the important ways to reduce the turn-on loss of the IGBT device.
According to the technical scheme, the Miller capacitance of the IGBT device can be reduced, the switching loss can be reduced, and the voltage resistance of the IGBT device can be improved.
The present application firstly proposes an IGBT device, as shown in fig. 2, and fig. 2 is a schematic structural diagram of an embodiment of the IGBT device of the present application. The IGBT device 10 of the present embodiment includes: collector 110, drift region 120, emitter 130 and gate 140 are sequentially stacked along a first direction, and a projection of gate 140 on collector 110 is located within a projection of emitter 130 on collector 110, so that emitter 130 is spaced from collector 110 and gate 140; wherein, in response to the IGBT10 turning on, a side of the emitter 130 close to the gate 140 forms a conductive channel extending in a first direction towards a side facing away from the collector 110.
The turn-on process of the IGBT device 10 is as follows: the first stage is as follows: the gate 140 current charges the gate-emitter capacitance, the gate 140 voltage rises to a first voltage, at which stage the collector 110 is currentless and the collector 110 voltage does not change, i.e. the stage time is a dead time, and the gate 140 current charges only the gate-emitter capacitance; and a second stage: the gate 140 current charges the gate-emitter capacitance and the miller capacitance, at which stage the IGBT device 10 begins to turn on, the collector 110 current begins to increase and reach the maximum load current, while the gate 140 voltage also reaches and is maintained at the miller voltage plateau; and a third stage: the gate 140 current continues to charge the gate-emitter capacitance and the first voltage begins to ramp up and the entire IGBT device 10 is fully on.
It can be seen that, in the second stage, that is, the IGBT device 10 starts to be turned on, the voltage of the gate 140 is maintained at the miller voltage level to charge the miller capacitance, so that the miller capacitance is reduced, the time of the gate 140 voltage at the miller voltage level can be shortened, and the IGBT device 10 can rapidly enter the third stage to achieve rapid turn-on.
Further, when the IGBT device 10 of this embodiment is turned on, the formed conduction channel extends toward a side away from the collector 110 along the first direction, and then extends from the emitter 130 to the collector 110, so as to effectively increase the length of the conduction channel.
Different from the prior art, in the IGBT device 10 of the present embodiment, the emitter 130 is disposed between the gate 140 and the collector 110, and the gate 140 and the collector 110 can be potential-shielded by the emitter 130, that is, the shielding electrode is disposed between two electrodes of the miller capacitance, and the miller capacitance can be reduced by the shielding electrode, so as to shorten the charging time of the miller capacitance, thereby reducing the switching loss of the IGBT device 10 on the miller platform, and further reducing the switching loss of the IGBT device 10; meanwhile, when the IGBT device 10 is turned on, the conductive channel formed at the side of the emitter 130 close to the gate 140 extends toward the side away from the collector 110 along the first direction, so that the conductive channel of the IGBT device 10 extends toward the side away from the collector 110 along the first direction, and then extends from the emitter 130 to the collector 110, which can effectively increase the length of the conductive channel, and thus can improve the voltage withstanding performance of the IGBT device 10.
Further, when the IGBT device 10 is turned off, the holes in the drift region 120 are mainly annihilated by being recombined with the electrons in the drift region 120, thereby achieving the turn-off of the IGBT device 10.
Optionally, the emitter 130 of the present embodiment includes: a first body region 131, an emission region 133 and an emission electrode 134, wherein the first body region 131 and the emission region 133 are arranged in contact along a first direction, the emission region 133 and the emission electrode 134 are arranged in contact along a second direction, and the second body region 132 is respectively in contact with the first body region 131 and the emission electrode 134; the projection of the gate 140 on the collector 110 is located within the projection of the emitter 134 on the collector 110, such that the emitter 134 is spaced from the collector 110 and the gate 140, and the gate 140 is in contact with the first body region 131, the emitter region 133 and the emitter 134, respectively; wherein the second direction is perpendicular to the first direction.
The contact arrangement of the first body region 131 and the emission region 133 along the first direction means that the first body region 131 and the emission region 133 are arranged along the first direction and sequentially in direct contact or in indirect contact through a conductive layer along the first direction; the contact arrangement of the emission region 133 and the emission electrode 134 along the second direction means that the emission region 133 and the emission electrode 134 are arranged along the second direction, and are sequentially in direct contact or in indirect contact through a conductive layer along the second direction; the second body region 132 is in direct contact with the first body region 131 and the emitter electrode 134, respectively, or in indirect contact through a conductive layer; the gate electrode 140 is in direct contact with the first body region 131, the emitter region 133 and the emitter electrode 134, respectively, or in indirect contact through a conductive layer.
The emitter electrode 134 of the embodiment separates the collector electrode 110 from the gate electrode 140, so that the emitter electrode 134 can shield the electric potential between the gate electrode 140 and the collector electrode 110, and the gate electrode 140 and the emitter electrode 134 can be arranged along the first direction, thereby facilitating the extraction of the gate electrode 141 and the emitter electrode 134 at the same side and simplifying the structure.
Optionally, the first body region 131 of the present embodiment further extends to a side of the emitter region 133 facing away from the emitter electrode 134; the drift region 120 further extends to a side of the first body region 131 facing away from the emitter region 133 and is in contact with the first body region 131 and the gate 140, respectively.
The drift region 120 is in direct contact with the first body regions 131 and the gate electrode 140, respectively, or in indirect contact through a conductive layer.
The first body region 131 is disposed in an "L" shape, and the first body region 131 can cross the separation drift region 120 and the emitter region 133.
Optionally, the IGBT device 10 of the present embodiment further includes a second body region 132 disposed on a side of the emitter electrode 134 facing away from the gate 140, and in contact with the first body region 131, the emitter region 133, and the emitter electrode 134, respectively.
The second body region 132 is in direct contact with the first body region 131, the emitter region 133, and the emitter electrode 134, respectively, or in indirect contact through a conductive layer.
The emitter 130 of the present embodiment includes a first body region 131 and a second body region 132, the first body region 131 being in electrical contact with the emitter electrode 134 through the second body region 132; and the doping concentration of the second body region 132 is greater than the doping concentration of the first body region 131.
By providing the second body region 132 of the present embodiment, a minority carrier extraction channel can be provided when the IGBT device 10 is turned off, and thus the turn-off speed of the IGBT device 10 can be increased.
Of course, in other embodiments, the second body region may not be provided, and only the first body region may be provided, to simplify the process.
Optionally, the IGBT device 10 further includes a first oxide layer 152 disposed between the drift region 120 and the second body region 132 and in contact with the second body region 132 and the drift region 120, respectively.
The first oxide layer 152 is in direct contact with the second body region 132 and the drift region 120, respectively, or in indirect contact through a conductive layer.
Further, the turn-on characteristic is one of the key parameters affecting the on-state loss of the IGBT device 10, and the turn-on resistance is reduced, which can effectively reduce the turn-on loss.
Therefore, the second body region 132 and the first oxide layer 152 of the IGBT device 10 of this embodiment form a first field plate structure, which can perform an electric field modulation effect on the drift region 120, and can optimize the electric field and the concentration distribution of the drift region 120, so that the on-resistance of the IGBT device 10 can be effectively reduced on the premise of ensuring the withstand voltage, and the switching loss can be further reduced.
In another embodiment, as shown in fig. 3, the IGBT device 10 of the present embodiment differs from the IGBT device 10 of the embodiment of fig. 1 in that: the IGBT device 10 of the present embodiment further includes: a semiconductor region 161 and a second oxide layer 162; wherein the semiconductor region 161 is disposed on a side of the collector 110 close to the drift region 120, and the drift region 120 further extends to between the second semiconductor region 161 and the collector 110; the second oxide layer 162 is disposed between the semiconductor region 161 and the drift region 120, and is in contact with the semiconductor region 161 and the drift region 120, respectively.
When the IGBT device 10 of this embodiment is manufactured by using a silicon wafer, the first oxide layer 152 and the second oxide layer 162 may be SiO2 layers, and the second body region 132 and the semiconductor region 161 may be manufactured by using polysilicon.
Wherein the second oxide layer 162 is in direct contact with the semiconductor region 161 and the drift region 120, respectively, or in indirect contact through a conductive layer.
The drift region 120 further spaces the second oxide layer 162 from the collector 110.
Further, the second oxide layer 162 of the present embodiment is also in direct contact with the gate insulating layer 142 or in indirect contact through the conductive layer to reduce the size of the IGBT device 10 in the second direction.
The semiconductor region 161 and the second oxide layer 162 of the present embodiment form a second field plate structure, which can perform an electric field modulation effect on the drift region 120, and can optimize an electric field and a concentration distribution of the drift region 120, so that on-resistance of the IGBT device 10 can be effectively reduced on the premise of ensuring a withstand voltage, and further, a switching loss can be reduced.
Further, in the present embodiment, the first field plate structure and the second field plate structure are adopted to perform electric field modulation on the drift region 120 at different positions, and the electric field and the concentration distribution of the drift region 120 can be optimized to the optimal state through the matching modulation of the first field plate and the second field plate, so that the on-resistance is effectively reduced on the premise of ensuring the withstand voltage.
The number of the plate field structures of the IGBT device can be selected according to the performance requirement and the structural process requirement of the IGBT device; for example, in order to simplify the structure and process of the IGBT device, one or none of the field plate structures may be provided; in order to further improve the voltage withstanding performance of the IGBT device, more than two field plate structures can be arranged.
Optionally, with continuing reference to fig. 2, the gate 140 of the present embodiment includes: a gate electrode 141 and a gate insulating layer 142; the gate electrode 141 is disposed on the gate insulating layer 142, and the gate insulating layer 142 is in contact with the first body region 131, the emitter region 133, and the emitter electrode 134.
The gate insulating layer 142 is in direct contact with the first body region 131, the emitter region 133 and the emitter electrode 134, or in indirect contact with the first body region, the emitter region 133 and the emitter electrode 134 through a conductive layer.
Further, the projection of the gate electrode 141 on the collector electrode 110 of the present embodiment is located in the projection of the emitter electrode 134 on the collector electrode 110, so that the gate 140 and the emitter electrode 134 are disposed along the first direction, which is convenient for leading out the gate electrode 141 and the emitter electrode 134 at the same side, and simplifies the structure.
In other embodiments, the gate electrode may be embedded in the gate insulating layer, that is, the gate electrode is surrounded by the gate insulating layer, so that the short channel effect can be improved.
The gate insulating layer 142 may be an oxide layer, for example, when the IGBT device 10 is made of a silicon wafer, the gate insulating layer 142 may be SiO 2 The layer, gate electrode 141, may be made of polysilicon.
The drift region 120 of the present embodiment further extends between the collector 110 and the emitter 130 to space the collector 110 and the emitter 130.
Optionally, the IGBT device of the present embodiment differs from the IGBT device 10 described above in that: the dimension of the gate insulating layer 142 of the present embodiment in the second direction is smaller than the dimension of the collector 110 in the second direction.
This structure can extend the drift region 120 to the gate insulating layer 142 and contact the gate insulating layer 142 directly along the second direction or indirectly through the conductive layer, which can increase the effective length of the drift region 120 and increase the voltage endurance of the IGBT device 10.
Optionally, the IGBT device 10 of the present embodiment further includes a buffer layer 170, and the collector 110 includes: a collector electrode 111 and a collector region 112; the collector region 112 is disposed between the collector electrode 111 and the buffer layer 170, and is in contact with the collector electrode 111 and the buffer layer 170, respectively, and the buffer layer 170 is disposed between the drift region 120 and the collector region 112, and is further in contact with the drift region 120.
Wherein, the collector region 112 is in direct contact with the collector electrode 111 and the buffer layer 170 respectively or in indirect contact with the buffer layer through a conductive layer; the buffer layer 170 is in direct contact with the drift region 120 or in indirect contact through a conductive layer.
Further, the first body region 131 has a first doping type, the emitter region 133 has a second doping type, the doping type of the second body region 132 and the doping type of the collector region 112 are the same as the doping type of the first body region 131, the doping type of the drift region 120 and the doping type of the buffer region 170 are the same as the doping type of the emitter region 133, the doping concentration of the second body region 132 is greater than the doping concentration of the first body region 131, the doping concentration of the drift region 120 is less than the doping concentration of the buffer region, and the doping concentration of the emitter region 133 is greater than the doping concentration of the buffer region.
Specifically, the first doping type of this embodiment is P-type doping, and the second doping type is N-type doping, that is, the semiconductor structure of the IGBT device 10 is composed of an N-type doped drift region, an N-type doped emitter region, an N-type doped buffer region, a P-type doped first body region, a P-type doped second body region, and a P-type doped collector region. The semiconductor structure of the IGBT device 10 of the present embodiment is an NPN structure, and when the IGBT device 10 is turned on, an N channel is formed.
Specifically, when the IGBT device 10 is turned on, the minority carrier injected by the emitter electrode 134 is a hole, and the minority carrier injected by the collector electrode 111 is an electron; when the voltage applied to the gate electrode 141 is greater than the threshold voltage, the emitter electrode 134 injects high-concentration electrons into the N-type doped drift region through the N-type doped emitter region, the P-type doped first body region and the P-type doped second body region, and forms electron current through the N-type doped buffer region and the P-type doped collector region; meanwhile, the collector electrode 111 injects high-concentration holes into the N-type doped drift region through the P-type doped collector region and the N-type doped buffer region, and combines with high-concentration electrons in the N-type doped drift region to form a hole current. The sum of the electron current and the hole current constitutes the saturation current capability of the IGBT device 10.
Further, the doping concentration of the P-type doped second body region is greater than that of the P-type doped first body region, so that a minority carrier extraction channel can be provided when the IGBT device 10 is turned off, and the turn-off speed of the IGBT device 10 can be increased.
In another embodiment, the first doping type is P-type doping, and the second doping type is N-type doping, i.e. the semiconductor structure is composed of a P-type doped drift region, a P-type doped emitter region, a P-type doped buffer region, an N-type doped first body region, an N-type doped second body region, and an N-type doped collector region. The semiconductor structure of the IGBT device 10 of the present embodiment is a PNP structure, and when the IGBT device 10 is turned on, a P channel is formed; specifically, when the IGBT device is turned on, the minority carrier injected by the emitter electrode is an electron, and the minority carrier injected by the collector electrode is a hole; when the voltage applied to the gate electrode is greater than the threshold voltage, the emitter injects high-concentration holes into the P-type doped drift region through the P-type doped emitter region, the N-type doped first body region and the N-type doped second body region, and the holes are formed through the P-type doped buffer region and the N-type doped collector region; meanwhile, the collector injects high-concentration electrons into the P-type doped drift region through the N-type doped collector region and the P-type doped buffer region, and the high-concentration electrons are combined with high-concentration holes in the P-type doped drift region to form hole current. The sum of the electron current and the hole current constitutes the saturation current capability of the IGBT device.
It should be noted that the shapes and positions of the semiconductor structures and the electrode structures of the layers of the IGBT device according to the embodiments of the present application may be changed as appropriate according to specific product designs.
The IGBT device 10 of the embodiment of fig. 2 can be formed using the processes shown in fig. 4 through 6. Specifically, a trench is formed on a silicon wafer by a co-directional etching process and a counter-directional etching process, as shown in fig. 4; then, forming a first oxide layer 152 by local oxidation, forming a second body region 132 by depositing polysilicon, and forming a first body region 131 by bevel doping, as shown in fig. 5; then an emitter electrode 134 is deposited and an emitter region 133 is formed by angled doping, as shown in fig. 6; finally, a gate insulating layer 142 is formed by dry oxidation, a gate electrode 141 is formed by electrode polysilicon, and a buffer region 170, a collector region 112, and a collector electrode 111 are formed by a backside process, as shown in fig. 2.
The present application further provides an intelligent power module, as shown in fig. 7, fig. 7 is a schematic structural diagram of an embodiment of the intelligent power module of the present application. The smart power module 40 of the present embodiment includes: the IGBT device 10 and its drive control circuit 41, the IGBT device 10 operates under drive control of the drive control circuit 41. Here, the IGBT device 10 is the IGBT device 10 according to the above embodiment, and details are not described here.
The intelligent power module is a semiconductor device consisting of a high-speed low-power-consumption IGBT, a grid drive and a corresponding protection circuit, and has the advantages of high current density, low saturation voltage and high voltage resistance of a high-power transistor and the advantages of high input impedance, high switching frequency and low driving power of a field effect transistor. The intelligent power module is internally integrated with a logic, control, detection and protection circuit, so that the intelligent power module is convenient to use, the volume and development time of the system are reduced, and the reliability of the system is greatly enhanced; the intelligent power module can be used in the fields of household appliances, rail transit, electric power systems and the like.
Be different from prior art, this application IGBT device includes: sequentially stacking a collector, a drift region, an emitter and a grid along a first direction; the projection of the grid electrode on the collector electrode is positioned in the projection of the emitter electrode on the collector electrode, so that the emitter electrode is separated from the collector electrode and the grid electrode; wherein, in response to the IGBT turning on, a side of the emitter near the gate forms a conductive channel extending in a first direction towards a side facing away from the collector. According to the IGBT device, the emitter is arranged between the grid electrode and the collector electrode, the grid electrode and the collector electrode can be subjected to potential shielding through the emitter, namely the shielding electrode is arranged between the two electrodes of the Miller capacitor, the Miller capacitor can be reduced through the shielding electrode, the charging time of the Miller capacitor is shortened, the switching loss of the IGBT device on a Miller platform can be reduced, and the switching loss of the IGBT device can be reduced; meanwhile, when the IGBT device is conducted, the conducting channel formed on one side, close to the grid electrode, of the emitting electrode extends towards one side, away from the collecting electrode, along the first direction, so that the conducting channel of the IGBT device extends towards one side, away from the collecting electrode, along the first direction firstly, and then extends to the collecting electrode from the emitting electrode, the length of the conducting channel can be effectively increased, and therefore the voltage resistance of the IGBT device can be improved.
Furthermore, the emitter of the embodiment of the application is provided with the second body region, and the doping concentration of the second body region is greater than that of the first body region, so that a minority carrier extraction channel can be provided when the IGBT device is turned off, and the turn-off speed of the IGBT device can be increased.
Further, the second body region and the first oxide layer form a first field plate structure, an electric field modulation effect can be performed on the drift region, an electric field and concentration distribution of the drift region can be optimized, and therefore on-resistance of the IGBT device can be effectively reduced on the premise that withstand voltage is guaranteed, and switching loss is further reduced.
Furthermore, the semiconductor region and the second oxide layer of the embodiment of the application form a second field plate structure, which can perform an electric field modulation effect on the drift region and optimize the electric field and concentration distribution of the drift region, so that the on-resistance of the IGBT device can be effectively reduced on the premise of ensuring the withstand voltage, and the switching loss can be further reduced; and the first field plate structure and the second field plate structure are adopted to respectively carry out electric field modulation on the drift region at different positions, and the electric field and the concentration distribution of the drift region can be optimized to the optimal state through the matched modulation of the first field plate and the second field plate, so that the on-resistance is effectively reduced on the premise of ensuring the withstand voltage.
Furthermore, according to the embodiment of the application, the drift region extends to the gate insulating layer and is in direct contact with the gate insulating layer along the second direction or in indirect contact with the gate insulating layer through the conducting layer, so that the effective length of the drift region can be increased, and the voltage withstanding performance of the IGBT device can be improved.
The above description is only an embodiment of the present application, and is not intended to limit the scope of the present application, and all equivalent mechanisms or equivalent flow transformations that are applied to the contents of the specification and the drawings, or are directly or indirectly applied to other related technical fields are also included in the scope of the present application.
Claims (9)
1. An IGBT device, characterized in that the IGBT device comprises: sequentially stacking a collector, a drift region, an emitter and a grid along a first direction;
the projection of the grid electrode on the collector electrode is positioned in the projection of the emitter electrode on the collector electrode, so that the emitter electrode is separated from the collector electrode and the grid electrode;
wherein, in response to the IGBT turning on, a side of the emitter near the gate forms a conductive channel extending in the first direction toward a side facing away from the collector;
the emitter includes: the first body region and the emitter region are arranged in a contact manner along the first direction, and the emitter region and the emitter electrode are arranged in a contact manner along the second direction;
the projection of the grid electrode on the collector electrode is positioned in the projection of the emitter electrode on the collector electrode, so that the emitter electrode is separated from the collector electrode and the grid electrode, and the grid electrode is respectively contacted with the first body region, the emitter region and the emitter electrode;
wherein the second direction is perpendicular to the first direction;
wherein the gate is a trench gate.
2. The IGBT device according to claim 1, wherein the first body region further extends to a side of the emitter region facing away from the emitter electrode;
the drift region further extends to a side of the first body region facing away from the emitter region and is in contact with the first body region and the gate, respectively.
3. The IGBT device of claim 1, wherein the gate comprises:
a gate electrode;
the gate insulating layer is respectively contacted with the first body region, the emitting region and the emitting electrode, and is arranged between the gate electrode and the first body region, between the emitting region and the emitting electrode, or is embedded in the gate insulating layer.
4. The IGBT device according to claim 2, further comprising a second body region disposed on a side of the emitter electrode facing away from the gate, and in contact with the first body region, the emitter region, and the emitter electrode, respectively.
5. The IGBT device of claim 4, further comprising a first oxide layer disposed between the drift region and the second body region and in contact with the second body region and the drift region, respectively.
6. The IGBT device according to any one of claims 1 to 5, wherein a dimension of the gate insulating layer in the second direction is smaller than a dimension of the collector electrode in the second direction.
7. The IGBT device of claim 4 or 5, further comprising a buffer layer, the collector comprising:
a collector electrode;
and a collector region disposed between the collector electrode and the buffer layer and in contact with the collector electrode and the buffer layer, respectively, wherein the buffer layer is disposed between the drift region and the collector region and further in contact with the drift region.
8. The IGBT device of claim 7, wherein the first body region has a first doping type, the emitter region has a second doping type, the doping types of the second body region, the collector region and the first body region are the same, the doping types of the drift region, the buffer layer and the emitter region are the same, and the doping concentration of the second body region is greater than the doping concentration of the first body region.
9. A smart power module, comprising: an IGBT device according to any one of claims 1 to 8, and a drive control circuit therefor.
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