CN112485981A

CN112485981A - Substrate processing apparatus and air supply method

Info

Publication number: CN112485981A
Application number: CN202010919558.5A
Authority: CN
Inventors: 田岛直树
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2019-09-12
Filing date: 2020-09-04
Publication date: 2021-03-12
Also published as: JP2021044453A; JP7482292B2; KR20210031617A; JP2023118711A; CN212694247U; JP7292159B2

Abstract

The invention provides a substrate processing apparatus and an air supply method. In a substrate processing apparatus having a plurality of processing units, the unit-to-unit difference between the temperature and humidity of clean air supplied to each processing unit is reduced. A substrate processing apparatus having a plurality of processing units for processing substrates, wherein the substrate processing apparatus has a plurality of pipes for supplying air to the processing units, each of the pipes has a connection pipe for connecting the pipe and a supply source of the air, the plurality of pipes are connected to the processing units in different numbers, and at least one of a flow rate of the air in the pipe and a flow rate of the air supplied to the pipes through the connection pipes is equal between the pipes.

Description

Substrate processing apparatus and air supply method

Technical Field

The present disclosure relates to a substrate processing apparatus and an air supply method.

Background

Patent document 1 discloses a substrate processing apparatus including a processing station in which a 1 st processing unit and a 2 nd processing unit are arranged in parallel in one direction on the front surface side of the apparatus. In the 1 st process unit section, a 3-layer resist coating process unit and a two-layer undercoat coating unit forming an antireflection film are stacked in this order from below into 5 layers, and in the 2 nd process unit section, a developing process unit is stacked into 5 layers. The substrate processing apparatus disclosed in patent document 1 is provided with two ducts for supplying clean air from an air conditioner installed outside the apparatus to each processing unit. The air supplied through the duct is cleaned by the ULPA filter provided to the upper part of the processing station and supplied to each processing unit in a downflow.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 2007-88485

Disclosure of Invention

Problems to be solved by the invention

The disclosed technology reduces the inter-unit difference in temperature and humidity of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.

Means for solving the problems

One aspect of the present disclosure is a substrate processing apparatus including a plurality of processing units for processing substrates, wherein the substrate processing apparatus includes a plurality of ducts for supplying air to the processing units, each of the ducts includes a connection pipe for connecting the duct and a supply source of the air, the plurality of ducts are connected to the processing units in different numbers, and at least one of a flow rate of the air in the duct and a flow rate of the air supplied to the duct via the connection pipe is equal between the ducts.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present disclosure, in a substrate processing apparatus having a plurality of processing units, it is possible to reduce the unit-to-unit difference in temperature and humidity of clean air supplied to each processing unit.

Drawings

Fig. 1 is a schematic plan view schematically showing the configuration of a coating and developing apparatus as a substrate processing apparatus according to the present embodiment.

Fig. 2 is a front vertical sectional view schematically showing the internal structure of the coating and developing apparatus of fig. 1.

Fig. 3 is a schematic view of the internal structure of the coating and developing apparatus of fig. 1, viewed from the front.

Fig. 4 is a view schematically showing the internal structure of the coating and developing apparatus of fig. 1, as viewed from the rear side.

Fig. 5 is a perspective view partially and schematically showing the inside of a process module of the coating and developing apparatus of fig. 1.

Fig. 6 is a plan view partially and schematically showing the inside of a process module of the coating and developing apparatus of fig. 1.

Fig. 7 is a front view partially and schematically showing an upper portion of a process module of the coating and developing apparatus of fig. 1.

Fig. 8 is a perspective view partially and schematically showing an upper portion of a process module of the coating and developing apparatus of fig. 1.

Fig. 9 is a perspective view partially and schematically showing the lower surfaces of the process module and the carrier module of the coating and developing apparatus of fig. 1.

Fig. 10 is a bottom view partially and schematically showing the lower surfaces of the process module and the carrier module of the coating and developing apparatus of fig. 1.

Fig. 11 is a perspective view schematically showing a lower portion of a process module of the coating and developing apparatus of fig. 1.

Fig. 12 is a perspective view showing an example of a cabinet provided on a side of the process module and housing the electrical components.

Fig. 13 is a partially enlarged view of fig. 12.

Detailed Description

In a photolithography process in a manufacturing process of a semiconductor device or the like, a series of processes are performed to form a desired resist pattern on a semiconductor wafer (hereinafter, referred to as a "wafer"), for example. In the series of processes, for example, a resist film formation process for forming a resist film by supplying a resist solution onto a wafer, an exposure process for exposing the resist film, a development process for developing the exposed resist film by supplying a developing solution thereto, and the like are performed. Of these processes, processes other than the exposure process, such as a resist film formation process and a development process, are performed by a coating and developing apparatus as a substrate processing apparatus.

The coating and developing apparatus is provided with various processing units such as a liquid processing unit for performing liquid processing on a wafer. In addition, clean air is supplied to, for example, each liquid processing unit so that the atmosphere in the unit is kept clean. In order to supply the clean air, a pipe is provided and connected to each liquid treatment unit (see patent document 1).

However, for example, when the number of liquid treatment units to be mounted is large, a plurality of (for example, two) pipes may be provided. When a plurality of pipes are provided, the number of processing units connected to each pipe may vary among the pipes. If the number of the processing units connected to each of the pipes is different, the flow rate of the air may be different between the pipes. For example, when the number of connected process units in which the 1 st duct and the 2 nd duct having the same size are provided is smaller than the number of connected process units in the 1 st duct and the flow rate of air to each process unit is equal, the flow rate of air in the 2 nd duct is lower than that in the 1 st duct. If the flow velocity of the air supplied through the duct is low in the duct, the air exists in the duct for a long time, and therefore, the air becomes a high temperature due to the influence of heat from the outside of the duct, and the humidity is relatively lowered. Therefore, in the 2 nd duct having a low flow velocity, the temperature difference and humidity difference of the supplied air between the process unit connected to the upstream side of the duct and the process unit connected to the downstream side of the duct become larger than those in the 1 st duct.

Further, if the number of processing units connected to each duct differs between ducts, the temperature and humidity of air supplied to each duct may differ. For example, when the number of processing units provided with the 1 st duct and the 2 nd duct is small and the flow rate of air to each processing unit is equal, if the 1 st connection pipe and the 2 nd connection pipe connecting the 1 st duct and the 2 nd duct to the air supply source respectively have the same size, the flow rate of air in the 2 nd connection pipe becomes lower than that in the 1 st connection pipe. If the flow rate of the air supplied to each duct through the connection pipe is low in the connection pipe, the air exists in the connection pipe for a long time, and therefore, the air has a high temperature due to the influence of heat from outside the connection pipe, and the humidity is relatively lowered. Therefore, if the flow rate of the air of the 2 nd connection pipe is slower than the flow rate of the air of the 1 st connection pipe as described above, the temperature of the air supplied to the 2 nd duct via the 2 nd connection pipe is higher than the temperature of the air supplied to the 1 st duct via the 1 st connection pipe. Therefore, a temperature difference and a humidity difference of the supplied air occur between the processing unit connected to the 1 st duct and the processing unit connected to the 2 nd duct.

If the temperature and humidity of the supplied air are different in each processing unit, for example, when a resist film is formed in the processing unit, a difference in film thickness or the like occurs between the units.

Therefore, the technology of the present disclosure reduces the inter-unit difference in temperature and humidity of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.

In particular, in a substrate processing apparatus having a plurality of pipes and different processing units connected in number between the pipes, the unit-to-unit difference in temperature and humidity of clean air supplied to each processing unit is reduced.

Hereinafter, the substrate processing apparatus and the air supply method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof is omitted.

Fig. 1 is a schematic plan view schematically showing the configuration of a coating and developing apparatus 1 as a substrate processing apparatus. Fig. 2 is a schematic vertical cross-sectional front view schematically showing the internal structure of the coating and developing apparatus 1. Fig. 3 and 4 are schematic views of the internal structure of the coating and developing apparatus 1, as viewed from the front side and the back side.

As shown in fig. 1, the coating and developing apparatus 1 is provided with a carrier module B1, a process module B2, and a relay module B3 in such a manner that the carrier module B1, the process module B2, and the relay module B3 are arranged in this order in the width direction (X direction in the drawing). In the following description, the above-described width direction may be referred to as a left-right direction. An exposure device E is connected to the right side (positive side in the X direction in the drawing) of the relay module B3.

The carrier module B1 is a module for carrying in and out a carrier C that collectively carries a plurality of wafers W as substrates.

The carrier module B1 is provided with a carrier mounting table 11. The carrier mounting table 11 is provided with a mounting plate 12 on which the carriers C are mounted when, for example, the carriers C are sent in and out from the coating and developing apparatus 1. A plurality of (4 in the example of the drawing) carriage plates 12 are provided along a depth direction (Y direction of the drawing) orthogonal to a width direction (X direction of the drawing) in a horizontal plane. In the carrier module B1, a wafer transfer mechanism 13 is provided between the carrier stage 11 and the process module B2. The wafer transfer mechanism 13 has a transfer arm 13a configured to be movable forward and backward, vertically movable, rotatable about a vertical axis, and movable in a depth direction, and is capable of transferring a wafer W between the carrier C on each of the mounting plates 12 and a transfer tower 21 described later.

The process module B2 is a module provided with a process unit for processing the wafer W before or after exposure, and in the present embodiment, is composed of a plurality of (two in the example of the drawing) sub-modules B21 and B22 connected in the left-right direction (X direction of the drawing). Hereinafter, the sub-module B21 on the side of the carrier module B1 is referred to as a left sub-module B21, and the sub-module B22 on the side of the transition module B3 is referred to as a right sub-module B22.

As shown in fig. 2 to 4, the left sub-module B21 and the right sub-module B22 are multilayered in the vertical direction, and include a layer 1 module L1 to a layer 6 module L6, and a layer 1 module P1 to a layer 6 module P6, respectively. Various processing units are arranged on each layer of module.

The left sub-module B21 is provided with a passing tower 21 on the side of the carrier module B1 so as to straddle the layer 1 modules P1 to the layer 6 modules P6.

The transfer tower 21 is formed by stacking a plurality of transfer modules in the vertical direction. The transfer tower 21 is provided with transfer modules at height positions corresponding to the respective floor modules L1 to L6. Specifically, the passing tower 21 is provided with passing modules TRS11 and CPL11 at positions corresponding to the layer 1 module L1. Similarly, handover modules TRS12 to TRS16 and CPL12 to CPL16 are provided at positions corresponding to the layer 2 module L2 to the layer 6 module L6. The handover module denoted by "TRS" and the handover module denoted by "CPL" are substantially the same in configuration, and only the latter has a flow path for a medium formed in a stage on which the wafer W is placed, for adjusting the temperature of the wafer W.

The transfer tower 21 is provided with a transfer module TRS10 at a height position within the carrier module B1 where the wafer transfer mechanism 13 can access, specifically, at a position between the transfer module CPL12 and the transfer module TRS 13. The hand-off module TRS10 is used for example when wafers between the left sub-module B21 and the carrier module B1 are transferred in and out.

As shown in fig. 1, the delivery tower 21 is provided at the center in the depth direction of the left sub-module B21, and the wafer transfer mechanism 22 is provided on the back side (the Y direction positive side in the drawing) of the delivery tower 21. The wafer transfer mechanism 22 has a transfer arm 22a configured to be movable forward and backward and to be movable up and down, and can transfer the wafer W between the transfer modules of the transfer tower 21.

Next, the layer 1 module L1 to layer 6 module L6 of the left submodule B21 will be explained. In fig. 1, the left sub-module B21 has a structure of a layer 1 module L1, and first, the layer 1 module L1 will be described in detail below.

As shown in fig. 1, a conveyance area M1 extending in the width direction from the transfer tower 21 is formed at the center in the depth direction of the layer 1 module L1.

In the layer 1 module L1, various units are provided in a region on the near side (negative side in the Y direction in the drawing) and a region on the far side (positive side in the Y direction in the drawing) of the conveying region M1.

Specifically, an antireflection film forming unit BCT1 as a liquid processing unit for performing liquid processing on the wafer W with the processing liquid is provided in a region on the front side of the layer 1 module L1, and vertical units T11 to T14 having various units are provided in a region on the rear side.

The antireflection film forming unit BCT1 is used to form an antireflection film on the wafer W. The antireflection film formation unit BCT1 includes: a spin chuck 31 for holding and rotating a wafer W; and a cup 32 surrounding the wafer W on the spin chuck 31 and collecting the processing liquid scattered from the wafer W. The combination of the spin chuck 31 and the cup 32 is provided in two in the width direction. The anti-reflection film forming unit BCT1 is provided with a nozzle 33 for discharging a treatment liquid for forming an anti-reflection film to the wafer W held by the spin chuck 31. The nozzle 33 is movably configured between the cups 32, and is shared between the cups 32.

The vertical cells T11 to T14 are provided in the order of vertical cells T11 to T14 from the left side (negative side in the X direction of the drawing) in the width direction. The vertical cells T11 and T12 each have a hydrophobizing unit for hydrophobizing the wafer W, and the hydrophobizing units are stacked in two layers in the vertical direction, for example, in each cell. The vertical cells T13 and T14 each have a heating unit for heating the wafer W, and the heating units are stacked in two layers in the vertical direction, for example, in each cell.

In the layer 1 module L1, a wafer transfer mechanism M11 is provided in the transfer area M1. The wafer transfer mechanism M11 has a transfer arm M11a that is configured to be movable forward and backward, movable up and down, rotatable about a vertical axis, and movable in a width direction (X direction in the drawing). The transfer arm M11a can transfer the wafer W between the transfer tower 21 and the antireflection film forming unit BCT1, between the antireflection film forming unit BCT1 and the vertical units T13 and T14, and the like. The transfer arm M11a is also able to access the later discussed handover tower 41 of the right sub-module B22.

The layer 2 module L2 is configured in the same manner as the layer 1 module L1. In the drawings and the like, a conveying area provided in the layer 2 module L2 is denoted by M2, an antireflection film forming unit is denoted by BCT2, and vertical units are denoted by T21 to T26. The wafer transfer mechanism provided in the transfer area M2 is denoted by M21, and the transfer arm of the wafer transfer mechanism M21 is denoted by M21 a.

The liquid treatment units disposed on the near side are different in type from each other and the vertical units disposed on the far side are different in structure from each other between the layer 3 module L3 and the layer 1 module L1. In the layer 3 module L3, a developing unit DEV1 that performs a developing process on the exposed wafer W is provided as a liquid processing unit instead of the antireflection film forming unit BCT 1. Further, the developing liquid is supplied as the processing liquid from the nozzle 33 of the developing unit DEV 1. In the layer 3 module L3, the vertical cells T31 to T34 each include the above-described heating cell. In the drawings and the like, a transfer area provided in the layer 3 module L3 is denoted by M3, a wafer transfer mechanism provided in the transfer area M3 is denoted by M31, and a transfer arm included in the wafer transfer mechanism M31 is denoted by M31 a.

The layer 4 modules L4 to layer 6 modules L6 are configured in the same manner as the layer 3 module L3. In the drawings and the like, the conveyance areas provided in the layer 4 module L4 to the layer 6 module L6 are denoted by M4 to M6, the developing units are denoted by DEV2 to DEV4, and the vertical units are denoted by T41 to T46, T51 to T56, and T61 to T66. The wafer transfer mechanisms provided in the transfer areas M4 to M6 are denoted by M41, M51, and M61, and the transfer arms included in the wafer transfer mechanisms M41, M51, and M61 are denoted by M41a, M51a, and M61a, respectively.

As shown in fig. 1, the right sub-module B22 has a cross-over tower 41 at a position adjacent to the conveying areas M1 to M6 of the left sub-module B21 in the width direction (X direction in the drawing). As shown in fig. 2, the cross-over tower 41 is provided so as to span the layer 1 modules P1 to layer 6 modules P6 of the right sub-module B22.

The plurality of transfer modules of the transfer tower 41 are stacked in the vertical direction. The transfer tower 41 is provided with transfer modules at height positions corresponding to the floor 1 module L1 to the floor 6 module L6 and the floor 1 module P1 to the floor 6 module P6. Specifically, the handover tower 41 is provided with a handover module TRS21 at a position corresponding to the layer 1 module L1 and the layer 1 module P1. Similarly, a handover module TRS22 is provided at a position corresponding to the layer 2 module L2 and the layer 2 module P2. In addition, hand-over modules TRS23 to TRS26 and CPL23 to CPL26 are provided at positions corresponding to the layer 3 module L3 to the layer 6 module L6 and the layer 3 module P3 to the layer 6 module P6.

In addition, the transfer tower 41 is provided with a transfer module TRS20 at a height position accessible to the wafer conveyance mechanisms Q11, Q21, Q31, which will be discussed later. The hand-over module TRS20 is used, for example, when a wafer W is loaded from the right sub-module B22 to the left sub-module B21.

As shown in fig. 1, the right sub-module B22 includes a wafer transfer mechanism 42 provided on the back side (the Y direction positive side in the drawing) of the transfer tower 41. The wafer transfer mechanism 42 has a transfer arm 42a configured to be movable forward and backward and to be movable up and down, and can transfer the wafer W between the transfer modules of the transfer tower 41.

Next, the layer 1 module P1 to layer 6 module P6 of the right submodule B22 will be explained.

In the present embodiment, the layer 4 modules P4 to the layer 6 modules P6 are provided with processing units such as liquid processing units, but the layer 1 modules P1 to the layer 3 modules P3 are not provided with processing units. The following is a detailed description. In fig. 1, the right submodule B22 has a structure of a 4 th module P4 among the 1 st to 6 th modules P1 to P6.

The liquid treatment units disposed on the near side have different structures with respect to the layer 4 module P4 of the right sub-module B22 and the layer 3 module L3 of the left sub-module B21. In the layer 4 module P4 of the right sub-module B22, a resist film forming unit COT1 for forming a resist film on the wafer W having the antireflection film formed thereon is provided as a liquid processing unit in place of the developing unit DEV 1. Further, a resist solution was supplied as a processing solution from the nozzle 33 of the resist film forming unit COT 1. In the drawings and the like, a conveying area provided in the 4 th-level module P4 is denoted by Q4, and vertical units are denoted by U41 to U44. The wafer transfer mechanism provided in the transfer area Q4 is denoted by Q41, and the transfer arm included in the wafer transfer mechanism Q41 is denoted by Q41 a. The wafer W can be transferred by the transfer arm Q41a between the transfer tower 41 and the resist film forming unit COT1, between the resist film forming unit COT1 and the vertical units U11 to U14, and the like. The transport arm Q41a is also able to access the later discussed interface tower 51 of the patching module B3.

The layer 5 module P5 and the layer 6 module P6 are configured in the same manner as the layer 4 module P4. In the drawings and the like, the transport regions provided in the layer 5 module P5 and the layer 6 module P6 are denoted by Q5 and Q6, the resist film forming units are denoted by COT2 and COT3, and the vertical units are denoted by U51 to U54 and U61 to U64. The wafer transfer mechanisms provided in the transfer areas Q5 and Q6 are denoted by Q51 and Q61, and the transfer arms included in the wafer transfer mechanisms Q51 and Q61 are denoted by Q51a and Q61 a.

Similarly to the layer 4 modules P4 to layer 6 modules P6, the layer 1 modules P1 to layer 3 modules P3 are provided with transfer areas Q1 to Q3, and the transfer areas Q1 to Q3 are provided with wafer transfer mechanisms Q11, Q21, and Q31 each having transfer arms Q11a, Q21a, and Q31 a. However, unlike the layer 4 modules P4 to layer 6 modules P6, the transfer arms Q11a, Q21a, and Q31a of the layer 1 modules P1 to P3 are used when the wafer W is handed over between the hand-over tower 41 and the hand-over tower 51 of the hand-over module B3, which will be described later. In the layer 1 module P1 to the layer 3 module P3, unlike the layer 4 modules P4 to the layer 6 modules P6, no processing unit is provided in the regions on the front side and the back side of the transfer regions Q1 to Q3. In the layer 1 module P1 to the layer 3 module P3, for example, regions on the front side of the transfer regions Q1 to Q3 are used as chemical chambers CHE for storing processing liquid bottles for storing various processing liquids such as resist liquids, pumps for pressurizing and transferring various processing liquids, and the like.

Also, in the process module B2, as shown in fig. 1 and 3, the

pipes

23, 43 are provided in the left sub-module B21 and the right sub-module B22, respectively. Specifically, in the left sub-module B21, the duct 23 is provided between the liquid processing units of the antireflection film forming units BCT1, BCT2 and the developing units DEV1 to DEV4 and the carrier module B1. In the right sub-module B22, the duct 43 is provided between the resist film forming units COT1 to COT3 and the relay module B3 in a plan view.

The

ducts

23 and 43 supply clean air from the air conditioner S as an air supply source to the respective liquid treatment units. The antireflection film forming units BCT1, BCT2, developing units DEV1 to DEV4, and resist film forming units COT1 to COT3 are each provided with a filter unit F at an upper portion. The filter unit F has, for example, an ULPA (Ultra Low Penetration Air) filter, a guide plate. The filter unit F cleans air blown by the fan from the air conditioner S by an ULPA filter, and supplies the air to the cup 32 by a guide plate, for example, in a downward flow (downflow). The upstream ends of the filter units F of the respective liquid treatment units are connected to the

pipes

23 and 43, and the upstream ends of the

pipes

23 and 43 are connected to one ends of the

flexible pipes

24 and 44 as connection pipes, respectively. The other ends of the

flexible tubes

24 and 44 are connected to the air conditioner S.

As shown in fig. 1, the transfer module B3 has a transfer tower 51 provided at a position adjacent to the center region in the depth direction of the right sub-module B22.

The plurality of delivery modules of the delivery tower 51 are stacked in the vertical direction. The transfer tower 51 is provided with transfer modules TRS31 to TRS33 at height positions corresponding to the respective layers of the layer 1 module P1 to layer 3 module P3 of the right sub-module B22.

The transfer module B3 is provided with a wafer transfer mechanism 52 on the exposure apparatus E side (positive side in the X direction of the drawing). The wafer transfer mechanism 52 has a transfer arm 52a configured to be movable forward and backward, to be movable up and down, to be rotatable about a vertical axis, and to be movable in a depth direction (Y direction in the drawing). The wafer W can be transported between the transfer tower 51 and the exposure apparatus E by the transport arm 52 a.

The coating and developing apparatus 1 configured as described above includes the control unit 100. The control unit 100 is a computer provided with, for example, a CPU, a memory, and the like, and includes a program storage unit (not shown). The program storage unit stores programs for controlling the operation of the drive systems of the various processing units, the wafer transfer mechanism, and the like described above to perform various processes on the wafer W. The program may be a program stored in a computer-readable storage medium, and may be installed from the storage medium to the control unit 100. Part or all of the program may be implemented by dedicated hardware (circuit board).

Next, a coating and developing process performed by using the coating and developing apparatus 1 configured as described above will be described.

First, the carrier C containing the plurality of wafers W is sent to the carrier module B1 of the coating and developing apparatus 1. Then, the wafers W in the carrier C are sequentially transferred to the transfer module TRS10 of the transfer tower 21 by the wafer transfer mechanism 13, and are loaded into the left sub-module B21 of the process module B2.

Next, the wafer W is transported by the wafer transport mechanism 22 to, for example, a transfer module TRS11 of the transfer tower 21.

Subsequently, the wafer W is conveyed by the wafer conveying mechanism M11 to, for example, a vertical cell T11 (hydrophobizing unit) to be hydrophobized. Thereafter, the wafer W is conveyed by the wafer conveyance mechanism M11 in the order of, for example, the delivery module CPL11 → the antireflection film formation unit BCT1 → the vertical unit T13 (heat treatment unit), and an antireflection film is formed.

Next, the wafer W is transferred to the transfer module TRS21 of the transfer tower 41 by the wafer transfer mechanism M11, and is carried into the right sub-module B22 of the process module B2. Thereafter, the wafer W is transported by the wafer transport mechanism 42 to, for example, the interface module CPL24, and is carried into the layer 4 module P4. Then, the wafer W is conveyed by the wafer conveyance mechanism Q41 in the order of the resist film forming unit COT1 → the vertical unit U41 (heat treatment unit) → the transfer module TRS24, thereby forming a resist film on the antireflection film.

Next, the wafer W is transferred by the wafer transfer mechanism 42 to, for example, a hand-over module TRS20 corresponding to the layer 1 module P1. Then, the wafer W is transferred to the transfer module TRS31 of the transfer tower 51 of the transfer module B3 by the wafer transfer mechanism Q11.

Subsequently, the wafer W is transported to the exposure apparatus E by the wafer transport mechanism 52 and exposed. After the exposure, the wafer W is transported by the wafer transport mechanism 52 to, for example, a transfer module TRS33 of the transfer tower 51. Next, the wafer W is again carried into the process module B2 by the wafer transfer mechanism Q31, and is transferred to the transfer module TRS20 corresponding to the layer 3 module P3 of the transfer tower 41.

Thereafter, the wafer W is transported by the wafer transport mechanism 42 to, for example, a transfer module TRS24 of the transfer tower 41. Next, the wafer W is carried into the left sub-module B21 by the wafer conveyance mechanism M41, and is conveyed to, for example, a vertical unit T41 (heat treatment unit) to perform PEB treatment. Thereafter, the wafer W is conveyed by the wafer conveyance mechanism M41 in the order of the interface module CPL24 → the developing unit DEV 1. Thereby, the wafer W is subjected to a developing process, and a resist pattern is formed on the wafer W.

After the development process, the wafer W is conveyed by the wafer conveyance mechanism M41 to the vertical unit T43 (thermal processing unit) → the delivery module CPL 14. Thereafter, the wafer W is transferred to the transfer module TRS10 by the wafer transfer mechanism 22. Then, the wafer W is sent out from the process module B2 by the wafer conveyance mechanism 13, and returned to the carrier C.

Next, the

pipes

23, 43 and the

flexible tubes

24, 44 are explained in more detail. Hereinafter, the flow rates of air supplied into the respective liquid processing units, i.e., the antireflection film forming units BCT1, BCT2, the developing units DEV1 to DEV4, and the resist film forming units COT1 to COT3 via the

ducts

23 and 43 are equal to each other between the units.

The

ducts

23 and 43 are provided so as to extend in the vertical direction as shown in fig. 3. The 6 liquid processing units, i.e., the antireflection film forming units BCT1, BCT2, and the developing units DEV1 to DEV4, are connected to the duct 23 from the lower end to the upper end. On the other hand, 3 liquid processing units, i.e., resist film forming units COT1 to COT3, are connected to the pipe 43 from the center portion to the upper end portion in the vertical direction. That is, the number of liquid treatment units to which the

pipes

23, 43 are connected is different from each other.

In addition, the lengths of the

pipes

23, 43 are equal to each other. In contrast, the cross-sectional area of the inside of the

duct

23, 43 is a value corresponding to the total flow rate of air to the liquid treatment unit connected to the duct. In the present embodiment, since the flow rates of the air supplied to the liquid treatment units are equal between the units, the cross-sectional area of the inside of the

duct

23, 43 is a value corresponding to the number of liquid treatment units connected to the duct. Since the number of the liquid treatment units connected to the pipe 23 is 6 and the number of the liquid treatment units connected to the pipe 43 is 3, the cross-sectional area of the inside of the pipe 43 is smaller and is 1/2 of the cross-sectional area of the inside of the pipe 23.

By setting the cross-sectional area of the inside of the

duct

23, 43 to a value corresponding to the total flow rate of air to the liquid treatment unit connected to the duct in this manner, the flow rate of the duct 43 is made to coincide with the flow rate of the duct 23 having a relatively high flow rate. Thus, the flow rates of the air in the

ducts

23 and 43 are equal.

In addition, the lengths of the

flexible tubes

24, 44 are equal to each other. In contrast, the cross-sectional area of the interior of the

flexible tubes

24 and 44 is a value corresponding to the total flow rate of air to the liquid treatment unit connected to the pipe connected to the flexible tubes. In the present embodiment, since the flow rates of the air supplied to the liquid treatment units are equal between the units, the cross-sectional area of the inside of the

flexible tubes

24 and 44 is set to a value corresponding to the number of liquid treatment units connected to the pipe connected to the flexible tubes. Since the number of the liquid treatment units connected to the pipe 23 is 6 and the number of the liquid treatment units connected to the pipe 43 is 3, the cross-sectional area of the inside of the flexible tube 44 is 1/2 of the cross-sectional area of the inside of the flexible tube 24.

By setting the cross-sectional area of the interior of the

flexible tubes

24 and 44 to a value corresponding to the total flow rate of air to the liquid treatment unit connected to the pipe connected to the flexible tubes in this manner, the flow rate of the flexible tube 44 is made to coincide with the flow rate of the flexible tube 24 having a relatively high flow rate. Thus, the flow velocity of the air in the

flexible tubes

24 and 44 becomes equal. That is, the flow rates of the air supplied to the

ducts

23 and 43 via the flexible tubes are equal.

In the above description, the flow rate of the air in the

ducts

23, 43 and the flow rate of the air supplied to the

ducts

23, 43 via the

flexible tubes

24, 44 are equal between the ducts, and either one may be equal between the ducts.

As described above, in the present embodiment, the coating and developing apparatus 1 includes the two

ducts

23 and 43 for supplying air to the liquid processing units, the

flexible pipes

24 and 44 for connecting the ducts and the air conditioner S are provided in the respective ducts, and the liquid processing units different in number from each other are connected to the two

ducts

23 and 43. In the present embodiment, at least one of the flow rate of the air in the

ducts

23 and 43 and the flow rate of the air supplied to the

ducts

23 and 43 via the

flexible tubes

24 and 44 is equal between the ducts.

When the flow rates of the air in the

ducts

23 and 43 are equal between the ducts, the time during which the air stays in the duct 43 having the small number of connections of the liquid treatment unit is not longer than the time during which the air stays in the duct 23 having the large number of connections. Therefore, in the pipe 43 in which the number of liquid processing units connected is small, it is possible to prevent the temperature difference and the humidity difference of the supplied air from becoming large between the liquid processing unit connected to the upstream side of the pipe and the liquid processing unit connected to the downstream side of the pipe (for example, the resist film forming unit COT1 and the resist film forming unit COT 3). In addition, when the flow rates of the air in the

ducts

23 and 43 are equal between the ducts, the temperature difference and humidity difference of the supplied air between the liquid treatment unit of the nth (n is an integer of 4 to 6) layer module connected to the duct 23 and the liquid treatment unit of the nth layer module connected to the duct 43 can be reduced.

In addition, when the flow rates of the air supplied to the

ducts

23 and 43 via the

flexible tubes

24 and 44 are equal between the ducts, in other words, when the flow rates of the air in the

flexible tubes

24 and 44 are equal between the flexible tubes, the following is performed. That is, in this case, the time during which the air stays in the flexible tube 44 connected to the tube 43 having the small number of connections to the liquid treatment unit is not longer than the time during which the air stays in the flexible tube 24 connected to the tube 23 having the large number of connections. Therefore, a large difference is not generated between the temperature and humidity of the air supplied to the duct 43 from the flexible tube 44 connected to the duct 43 having the small number of connections and the temperature and humidity of the air supplied to the duct 23 from the flexible tube 24 connected to the duct 23 having the small number of connections. Therefore, the temperature difference and humidity difference of the supplied air between the liquid treatment unit connected to the duct 23 and the liquid treatment unit connected to the duct 43 can be reduced.

Therefore, according to the present embodiment, the unit-to-unit difference in temperature and humidity of the clean air supplied to each liquid treatment unit can be reduced.

In addition, when the processing module is configured by a plurality of submodules from the viewpoint of transportation or the like, there is a case where submodules having substantially the same size are used due to design efficiency or the like, and in this case, there is a case where only the liquid processing unit, the heat treatment unit, or the like does not fill the space within the submodules. For example, in such a case, there is a case where the number of connections of the liquid processing units differs between the pipes as in the present embodiment.

Next, another configuration of the coating and developing apparatus 1 for reducing the difference between the liquid processing units in temperature and humidity will be described.

Fig. 5 and 6 are a perspective view and a plan view, respectively, partially and schematically showing the inside of the process module B2.

As shown in fig. 5, the duct 23 is covered with a heat insulating member 23a that insulates the air flowing in the duct 23 from the heat outside the duct 23. The heat insulating member 23a is formed of, for example, a resin material having a low thermal conductivity. In the example shown in the drawings, the heat insulating member 23a covers the entire vertical direction of the near side (negative side in the Y direction in the drawings), the left side (negative side in the X direction in the drawings), and the far side (positive side in the Y direction in the drawings) of the duct 23 formed in a rectangular parallelepiped shape.

As shown in fig. 6, the heat insulating member 23a is attached to the duct 23 so that an air layer 23b is formed between the heat insulating member and the outer peripheral surface of the duct 23.

By providing the heat insulating member 23a as described above, the temperature of the air flowing through the duct 23 can be prevented from being increased by the influence of the outside of the duct. When the temperature of the air flowing through the duct 23 is increased by the influence of the outside, the temperature difference and humidity difference of the supplied air between the liquid treatment unit connected to the upstream side of the duct and the liquid treatment unit connected to the downstream side of the duct become large. In contrast, the heat insulating member 23a is provided to prevent the temperature of the air flowing in the duct 23 from being increased by the influence of the outside of the duct, thereby preventing the temperature difference and the humidity difference from being increased.

Further, by attaching the heat insulating member 23a so as to form the air layer 23b, the influence of the outside of the duct on the air in the duct can be further reduced. Therefore, the temperature difference and humidity difference of the supplied air between the liquid treatment unit on the upstream side of the duct and the liquid treatment unit on the downstream side of the duct can be further reduced.

Although not shown, the duct 43 is similarly provided with a heat insulating member.

Fig. 7 and 8 are a front view and a perspective view partially and schematically showing an upper portion of the process module B2, respectively.

As shown in fig. 7, the process module B2 includes a casing 10 that houses various process units and

ducts

23 and 43. The process module B2 includes a plurality of electrical components 200, which are provided above the casing 10 and are unitized with electrical components provided for the liquid processing unit and the like.

As shown in fig. 8, a pair of rails 210 are provided on the top surface 10a of the housing 10, and the pair of rails 210 are used to move the electrical installation unit 200 in the depth direction (Y direction in the drawing) and attach and detach the electrical installation unit 200 to and from the top surface 10 a. Guide grooves 211 are formed in the guide rail 210 so as to extend in the depth direction.

The electrical installation unit 200 includes a unit main body 201, and electrical components are housed in the unit main body 201. The electrical installation includes, for example, a control device, an amplifier, a power supply, a driver, a contactor, a circuit breaker, and the like.

A protrusion member 202 is provided on the lower side of the unit main body 201. The protrusion member 202 has a protrusion 203 extending in the depth direction. The electric component unit 200 is configured to be movable in the depth direction along the guide rail 210 by the guide groove 211 of the guide rail 210 and the protrusion 203 of the protrusion member 202.

In this example, the protruding member 202 of the electrical component mounting unit 200 is attached to the lower surface of the unit main body 201 via the support member 204. The support member 204 has a leg portion 205 formed to extend in the vertical direction. The electric mounting unit 200 is elevated by the support member 204 having the leg portion 205, and is disposed above the housing 10 at a position apart from the top surface 10a of the housing 10. Thus, the air supplied to the liquid treatment unit of the process module B2 near the top surface 10a of the casing 10 is not affected by the heat from the electric installation unit 200. Therefore, the supplied air does not cause a temperature difference or a humidity difference between the liquid treatment unit near the top surface 10a and the other liquid treatment units due to heat from the electric component unit 200.

In the case where the electrical installation unit 200 is raised in this manner, it is preferable that the height of the unit main body 201 be contracted by an amount corresponding to the raising by, for example, increasing the installation density of the electrical components in the unit main body 201.

Fig. 9 and 10 are a perspective view and a bottom view partially and schematically showing the lower surfaces of the process module B2 and the carrier module B1, respectively.

As shown in fig. 9 and 10, the flexible tube 24 connected to the pipe 23 extends from the lower surface of the casing 10 of the process module B2 to be exposed. A partition plate 24a is provided around the flexible tube 24 in a bottom view. Specific examples of the installation position of partition plate 24a are as follows.

An exhaust hole 301 is provided in the lower surface of the carrier module B1. The air outlet 301 is configured to discharge air discharged by a fan (not shown) for adjusting the pressure inside the carrier module B1 to the outside of the carrier module B1. A partition plate 24a is provided between the exhaust hole 301 and the flexible tube 24 in a bottom view.

Further, a partition plate 24a may be provided on the back side (the Y direction positive side in the drawing) of the flexible tube 24. Moreover, a partition plate 24a may be provided on the near side (the negative side in the Y direction of the drawing) of the flexible tube 24.

By providing partition plate 24a as described above, the air in flexible tube 24 is not affected by the ambient heat, particularly the heat of the exhaust air from exhaust hole 301 in the lower surface of carrier module B1. Therefore, a temperature difference or a humidity difference is not generated between the liquid treatment unit connected to the pipe 23 connected to the flexible pipe 24 and the liquid treatment unit connected to the pipe 43 connected to the flexible pipe 44 by the supplied air due to the heat from the outside of the flexible pipe 24.

Fig. 11 is a perspective view schematically showing the lower part of the processing module B2.

As shown in the drawing, the process module B2 includes a cover 400, and the cover 400 covers a gap between the lower surface of the casing 10 and the floor surface FL on which the coating and developing apparatus 1 is installed from the front. Further, the cover 400 is formed with a large number of through holes 401 penetrating in the depth direction.

By providing such a cover 400, the housing 10 can be prevented from being hot-closed on the lower side. Therefore, the liquid processing unit near the lower surface of the casing 10 is not affected by heat choking to the lower side of the casing 10. Therefore, a temperature difference or a humidity difference is not generated between the process unit close to the lower surface of the casing 10 and the other process units due to heat staying at the lower side of the casing 10.

In addition, the coating and developing apparatus 1 may be provided with a cabinet for housing electric components at a side of the process module B2.

Fig. 12 is a perspective view showing an example of the cabinet.

The cabinet 500 shown in the drawing is provided with a case 501 for housing electrical components. The casing 501 is provided on the right side (X-direction positive side in the drawing) of the layer 4 module P4 of the right submodule B22 of the process module B2, for example.

The case 501 has a top plate 510 and a frame 520 to which the top plate is attached.

The top plate 510 has a through hole 511 penetrating in the vertical direction. This prevents heat of the electrical components in the housing 501 from being confined in the housing 501. Therefore, the air in the liquid treatment unit and the duct 43 near the tank 501 is not affected by the heat confined in the tank 501. Therefore, a temperature difference or a humidity difference does not occur between the processing unit close to the casing 501 and the other processing units due to the heat confined in the casing 501.

In the casing 10 of the process module B2, a through hole 10B penetrating in the width direction is formed in a side surface on the cabinet 500 side above the casing 501. By forming the through-hole 10B, the heat transferred from the case 501 to the process module B2 can be released through the through-hole 10B.

The cabinet 500 has a cover plate 502 that covers the through hole 511 of the top plate 510 of the case 501 from above at a position facing the top plate 510. By providing the cover plate 502, when water is discharged from a sprinkler not shown, it is possible to prevent the electric components in the case 501 from malfunctioning. Further, the distance between the cover plate 502 and the top plate 510 is, for example, 150 mm.

Fig. 13 is a partially enlarged view of fig. 12.

As shown in the drawing, a top plate 510 of the case 501 is provided with a leg portion 512 in an L shape in side view. The top plate 510 is attached to the upper surface of the housing 520 via the leg portion 512, so that a gap 521 can be formed between the top plate 510 and the housing 520. The gap 521 allows heat of the electrical component in the housing 501 to be dissipated.

In the above example, the processing module B2 is composed of two sub-modules, or may be composed of 3 or more sub-modules.

The processing module B2 may be constituted by 1 module. In this case, the transfer tower 41 and the wafer transfer mechanism 42 are omitted. In this case, the wafer transfer mechanisms Q11, Q21, and Q31 are omitted, and the wafer transfer mechanisms M11, M21, and M31 may be configured to access the transfer tower 51. The wafer transfer mechanisms Q41, Q51, and Q61 are also omitted, and the wafer transfer mechanism M41 may be configured to access the COT1 and the vertical units U41 to U44, and the wafer transfer mechanisms M51 and M61 may be configured similarly.

In the above example, the number of the connections is also plural for the pipes having the small number of connections in the liquid treatment unit, but the number of the connections may be 1 for the pipes having the small number of the connections. In the above example, the ratio of the number of connections of the pipe having the smaller number of connections to the pipe having the larger number of connections is 1: 2, but may be more than 1: 2, or more than 1: 2 small. That is, the number of connections may be different between the pipes.

In the above example, the flow rate of the air in the duct is "equal" between the ducts, and the flow rate of the air supplied to the duct via the connection pipe is "equal" between the ducts, and "equal" does not require precise matching of the measured values of the flow rates. As a result of comparison, the measured values of the flow rates having slight differences are included in the "equal" range, as long as the effects of reducing the inter-unit differences in the temperature and humidity of the clean air supplied to each processing unit are exhibited by the duct or the connecting pipe having the structure disclosed in the above example.

The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the gist thereof.

The following configurations also fall within the scope of the present disclosure.

(1) A substrate processing apparatus having a plurality of processing units for processing a substrate,

the substrate processing apparatus includes a plurality of ducts for supplying air to the processing units,

each of the ducts has a connection pipe for connecting the duct and a supply source of air,

the plurality of pipes are connected with the processing units different in number from each other,

at least any one of a flow rate of air inside the ducts and a flow rate of air supplied to the ducts via the connection pipe is equal between the ducts.

According to the above (1), in the substrate processing apparatus having a plurality of processing units, it is possible to reduce the unit-to-unit difference in temperature and humidity of the clean air supplied to each processing unit.

(2) The substrate processing apparatus according to the item (1), wherein,

satisfying at least either of the following conditions (A) and (B),

(A) the ducts each having a cross-sectional area corresponding to the total flow of air to the treatment units connected thereto;

(B) the connection pipes each have a cross-sectional area corresponding to a total flow rate of air to the processing units connected to the pipe connected thereto.

(3) The substrate processing apparatus according to the item (1) or (2), wherein,

the duct is covered with a heat insulating member that insulates air flowing inside the duct from heat outside the duct.

(4) The substrate processing apparatus according to the item (3), wherein,

an air layer is formed between the pipe and the heat insulating member.

(5) The substrate processing apparatus according to any one of the above (1) to (4),

the substrate processing apparatus includes a housing that houses the processing unit.

(6) The substrate processing apparatus according to the item (5), wherein,

the substrate processing apparatus includes an electrical component,

the electric installation article is arranged at a position above the shell and separated from the shell.

(7) The substrate processing apparatus according to the item (5) or (6), wherein,

the housing receives the pipe, the connection pipe extends from a lower surface of the housing,

a partition plate is provided around the connecting pipe in a upward view.

(8) The substrate processing apparatus according to the item (7), wherein,

the substrate processing apparatus includes a carrier module for carrying in and out a carrier containing a plurality of substrates,

the carrier module is adjacent to the housing,

the partition plate is arranged between the exhaust hole formed on the lower surface of the bearing module and the connecting pipe when viewed from the top.

(9) The substrate processing apparatus according to any one of the above (5) to (8),

the substrate processing apparatus has a cover for covering a gap between a lower surface of the housing and a floor surface on which the substrate processing apparatus is installed,

the cover is formed with a through hole.

(10) The substrate processing apparatus according to any one of the above (5) to (9),

the side of the shell is provided with a cabinet body provided with a box body for accommodating electrical installation products.

(11) The substrate processing apparatus according to the item (10), wherein,

a through hole is formed in the top plate of the box body.

(12) The substrate processing apparatus according to the item (11), wherein,

the cabinet has a cover plate that covers a through hole of a top plate of the box from above at a position facing the top plate.

(13) The substrate processing apparatus according to any one of the above (10) to (12),

the box body is provided with a top plate and a frame body for installing the top plate,

a gap is arranged between the frame body and the top plate.

(14) The substrate processing apparatus according to any one of the above (10) to (13),

a through hole is formed in a side surface of the housing above the case.

(15) An air supply method for supplying clean air to a plurality of processing units in a substrate processing apparatus having the processing units for processing substrates,

the substrate processing apparatus has a plurality of ducts for supplying air to the processing units,

each of the pipes has a connection pipe for connecting the pipe and a supply source of air,

at least any one of a flow rate of air inside the ducts and a flow rate of air supplied to the ducts via the connection pipe is equal between the ducts,

in the air supply method,

clean air from the supply source of air is supplied to the process units via the connection pipes and the ducts, respectively.

Claims

1. A substrate processing apparatus having a plurality of processing units for processing a substrate,

2. The substrate processing apparatus according to claim 1,

satisfying at least either of the following conditions (A) and (B),

3. The substrate processing apparatus according to claim 1 or 2,

4. The substrate processing apparatus according to claim 3,

an air layer is formed between the pipe and the heat insulating member.

5. The substrate processing apparatus according to claim 1 or 2,

6. The substrate processing apparatus according to claim 5,

the substrate processing apparatus includes an electrical component,

7. The substrate processing apparatus according to claim 5,

a partition plate is provided around the connecting pipe in a upward view.

8. The substrate processing apparatus according to claim 7,

the carrier module is adjacent to the housing,

9. The substrate processing apparatus according to claim 5,

the cover is formed with a through hole.

10. The substrate processing apparatus according to claim 5,

11. The substrate processing apparatus according to claim 10,

a through hole is formed in the top plate of the box body.

12. The substrate processing apparatus according to claim 11,

13. The substrate processing apparatus according to claim 10,

a gap is arranged between the frame body and the top plate.

14. The substrate processing apparatus according to claim 10,

a through hole is formed in a side surface of the housing above the case.

15. An air supply method for supplying clean air to a plurality of processing units in a substrate processing apparatus having the processing units for processing substrates,

in the air supply method,