JP2023118711A - Substrate processing apparatus - Google Patents

Abstract

To reduce inter-unit differences in temperature and humidity of clean air supplied to each processing unit in a substrate processing apparatus having multiple processing units.SOLUTION: A substrate processing apparatus having a plurality of processing units for processing substrates, comprises a plurality of ducts supplying air to the processing units, and an enclosure housing the processing units, each duct has a connection pipe connecting the duct to an air supply source, the enclosure houses the ducts, the connection pipe extends from the enclosure, and a partition plate is provided around the connection pipe.SELECTED DRAWING: Figure 9

Description

The present disclosure relates to a substrate processing apparatus.

Patent Document 1 discloses a substrate processing apparatus having a processing station in which a first processing unit section and a second processing unit section are arranged side by side in one direction on the front side of the apparatus. In the first processing unit section, three resist coating processing units and two bottom coating units for forming an antireflection film are stacked in five stages from the bottom, and the second processing unit section includes a developing processing unit. It is stacked in 5 layers. Further, the substrate processing apparatus of Patent Document 1 is provided with two ducts for supplying clean air from an air conditioner provided outside the apparatus to each processing unit. The air supplied through the duct is cleaned by the ULPA filter provided above the processing station and supplied to each processing unit in a downflow.

JP 2007-88485 A

The technology according to the present disclosure reduces differences in temperature and humidity of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.

One aspect of the present disclosure is a substrate processing apparatus having a plurality of processing units for processing substrates, comprising: a plurality of ducts for supplying air to the processing units; and a housing for housing the processing units, Each duct has a connection pipe that connects the duct and an air supply source, and the housing accommodates the duct, the connection pipe extends from the housing, and surrounds the connection pipe. is provided with a partition plate.

According to the present disclosure, in a substrate processing apparatus having a plurality of processing units, it is possible to reduce unit-to-unit differences in the temperature and humidity of clean air supplied to each processing unit.

1 is a plan view schematically showing an outline of a configuration of a coating and developing apparatus as a substrate processing apparatus according to this embodiment; FIG. 2 is a longitudinal sectional front view schematically showing the outline of the internal configuration of the coating and developing apparatus of FIG. 1; FIG. FIG. 2 is a diagram schematically showing the outline of the internal configuration of the coating and developing apparatus of FIG. 1 as seen from the front side; FIG. 2 is a diagram schematically showing the outline of the internal configuration of the coating and developing apparatus of FIG. 1 as viewed from the rear side; 2 is a perspective view partially and schematically showing the inside of a processing block of the coating and developing apparatus of FIG. 1; FIG. 2 is a top view partially and schematically showing the inside of a processing block of the coating and developing apparatus of FIG. 1; FIG. 2 is a front view partially and schematically showing an upper portion of a processing block of the coating and developing apparatus of FIG. 1; FIG. 2 is a perspective view partially and schematically showing an upper portion of a processing block of the coating and developing apparatus of FIG. 1; FIG. 2 is a perspective view partially and schematically showing the lower surfaces of a processing block and a carrier block of the coating and developing apparatus of FIG. 1; FIG. 2 is a bottom view partially and schematically showing the bottom surfaces of a processing block and a carrier block of the coating and developing apparatus of FIG. 1; FIG. 2 is a perspective view schematically showing a lower portion of a processing block of the coating and developing apparatus of FIG. 1; FIG. FIG. 3 is a perspective view showing an example of a cabinet for storing electrical equipment, which is provided on the side of the processing block; FIG. 13 is a partially enlarged view of FIG. 12;

2. Description of the Related Art In a photolithography process in a semiconductor device manufacturing process, for example, a series of processes are performed to form a desired resist pattern on a semiconductor wafer (hereinafter referred to as "wafer"). In the above series of processes, for example, a resist film forming process of supplying a resist solution onto a wafer to form a resist film, an exposure process of exposing the resist film, and a developing process of supplying a developing solution to the exposed resist film and developing it. etc. are performed. Among these processes, processes other than the exposure process, such as the resist film formation process and the development process, are performed in a coating and developing apparatus, which is a substrate processing apparatus.

2. Description of the Related Art A coating and developing apparatus is provided with various processing units such as a liquid processing unit for liquid processing a wafer. Also, for example, clean air is supplied to each liquid processing unit to keep the atmosphere in the unit clean. In order to supply this clean air, a duct is provided and connected to each liquid processing unit (see Patent Document 1).

By the way, for example, when a large number of liquid processing units are mounted, a plurality of (for example, two) ducts may be provided. Also, when a plurality of ducts are provided, the number of processing units connected to each duct may differ among the ducts. If the number of processing units connected to each duct is different in this way, the air flow velocity may differ between the ducts. For example, if first and second ducts of the same size are provided, the number of connections of the processing units is less in the second duct than in the first duct, and the air flow rate to each processing unit is equal, then the second The air velocity in the second duct is slower than in the first duct. The air supplied through the duct stays in the duct for a longer period of time if the flow velocity inside the duct is slow. going down. Therefore, in the second duct, which has a slow flow velocity, the difference in temperature and humidity between the processing unit connected to the upstream side of the duct and the processing unit connected to the downstream side of the duct is greater than that in the first duct. the difference becomes large.

Moreover, if the number of processing units connected to each duct differs between ducts, the temperature and humidity of the air supplied to each duct may differ. For example, if first and second ducts are provided, the second duct has fewer connections to the processing units, and the flow rate of air to each processing unit is equal, the first and second ducts and the air If the dimensions of the first and second connecting pipes, which are respectively connected to the supply sources, are equal, the flow velocity of the air is slower in the second connecting pipe than in the first connecting pipe. The air supplied to each duct through the connecting pipes will stay in the connecting pipes for a longer time if the flow velocity inside the connecting pipes is slow, so the temperature will be higher due to the influence of heat from the outside of the connecting pipes. Humidity is relatively low. Therefore, if the flow velocity of the air in the second connecting pipe is lower than that in the first connecting pipe as described above, the air supplied to the first duct via the first connecting pipe will have a lower flow velocity in the second connecting pipe. The temperature of the air that is supplied to the second duct via the connecting pipe becomes high. Therefore, a temperature difference and a humidity difference occur between the processing unit connected to the first duct and the processing unit connected to the second duct.
If the temperature and humidity of the supplied air are different between the processing units, for example, when a resist film is formed in each processing unit, a film thickness difference occurs between the units.

Therefore, the technique according to the present disclosure reduces the unit-to-unit differences in the temperature and humidity of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.
In particular, in a substrate processing apparatus having a plurality of ducts and different numbers of processing units to be connected among the ducts, the unit-to-unit difference in temperature and humidity of clean air supplied to each processing unit is reduced.

A substrate processing apparatus and an air supply method according to the present embodiment will be described below with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, thereby omitting redundant description.

FIG. 1 is a plan view schematically showing the outline of the configuration of a coating and developing apparatus 1 as a substrate processing apparatus. FIG. 2 is a longitudinal sectional front view schematically showing the outline of the internal configuration of the coating and developing apparatus 1. As shown in FIG. 3 and 4 are diagrams schematically showing the outline of the internal configuration of the coating and developing apparatus 1 as viewed from the front side and the back side.

In the coating and developing apparatus 1, as shown in FIG. 1, a carrier block B1, a processing block B2, and an interface block B3 as a relay block are arranged in this order along the width direction (the X direction in the drawing). is provided. In the following description, the width direction described above may be described as the left-right direction. An exposure apparatus E is connected to the right side of the interface block B3 (the positive side in the X direction in the drawing).

The carrier block B1 is a block into and out of which a carrier C for collectively transporting wafers W as a plurality of substrates is loaded and unloaded.
A carrier table 11 is provided on the carrier block B1. The carrier mounting table 11 is provided with a mounting plate 12 on which the carrier C is mounted, for example, when the carrier C is carried in and out from the outside of the coating and developing apparatus 1 . A plurality (four in the figure) of the placing plates 12 are provided along the width direction (the X direction in the figure) and the depth direction (the Y direction in the figure) perpendicular to each other in the horizontal plane. Further, the carrier block B1 is provided with a wafer transfer mechanism 13 between the carrier table 11 and the processing block B2. The wafer transfer mechanism 13 has a transfer arm 13a which can move forward and backward, can move up and down, can rotate about a vertical axis, and can move in the depth direction. A wafer W can be transferred to and from the delivery tower 21 .

The processing block B2 is a block provided with processing units for processing wafers W before or after exposure. ) sub-blocks B21 and B22. Hereinafter, the sub-block B21 on the carrier block B1 side is called the left sub-block B21, and the sub-block B22 on the interface block B3 side is called the right sub-block B22.

As shown in FIGS. 2 to 4, the left sub-block B21 and the right sub-block B22 are multilayered in the vertical direction, and are composed of first to sixth layer blocks L1 to L6 and first to sixth layer blocks P1, respectively. ~P6. Each layer block is provided with various processing units.

In the left sub-block B21, a transfer tower 21 is provided on the carrier block B1 side so as to straddle the first to sixth layer blocks P1 to P6.
The delivery tower 21 is formed by vertically stacking a plurality of delivery modules. The delivery tower 21 is provided with delivery modules at height positions corresponding to the first to sixth layer blocks L1 to L6. Specifically, the delivery tower 21 is provided with delivery modules TRS11 and CPL11 at positions corresponding to the first layer blocks L1. Similarly, transfer modules TRS12 to TRS16 and CPL12 to CPL16 are provided at positions corresponding to the second to sixth layer blocks L2 to L6. Note that the delivery module with "TRS" and the delivery module with "CPL" have substantially the same configuration, and only the latter is mounted on the stage on which the wafer W is mounted. It differs in that a medium channel is formed to adjust the temperature.

Moreover, the transfer tower 21 is provided with a transfer module TRS10 at a height position accessible by the wafer transfer mechanism 13 in the carrier block B1, specifically, at a position between the transfer module CPL12 and the transfer module TRS13. ing. This transfer module TRS10 is used, for example, when wafers are transferred between the left sub-block B21 and the carrier block B1.

As shown in FIG. 1, the delivery tower 21 is provided at the center position in the depth direction of the left sub-block B21, and the wafer transfer mechanism 22 is provided on the back side of the delivery tower 21 (positive side in the Y direction in the figure). is provided. The wafer transfer mechanism 22 has a transfer arm 22 a that can move back and forth and move up and down, and can transfer the wafer W between the transfer modules of the transfer tower 21 .

Next, the first to sixth layer blocks L1 to L6 of the left subblock B21 will be described. Note that FIG. 1 shows the configuration of the first layer block L1 for the left sub-block B21, and the first layer block L1 will be specifically described below.

As shown in FIG. 1, a transport area M1 extending in the width direction from the transfer tower 21 is formed at the center in the depth direction of the first layer block L1.

In the first layer block L1, various units are provided in the area on the front side (negative side in the Y direction in the figure) and the area on the back side (positive side in the Y direction in the figure) of the transport area M1.
Specifically, an antireflection film forming unit BCT1, which is a liquid processing unit that performs liquid processing on the wafer W with a processing liquid, is provided in the front side area of the first layer block L1, and various Vertical units T11-T14 with units are provided.

The antireflection film forming unit BCT1 forms an antireflection film on the wafer W. FIG. The antireflection film forming unit BCT1 has a spin chuck 31 that holds and rotates the wafer W, and a cup 32 that surrounds the wafer W on the spin chuck 31 and collects the processing liquid scattered from the wafer W. Two sets of these spin chucks 31 and cups 32 are provided along the width direction. The antireflection film forming unit BCT1 is also provided with a nozzle 33 for ejecting a treatment liquid for forming an antireflection film onto the wafer W held by the spin chuck 31 . The nozzle 33 is configured to be movable between the cups 32 and shared between the cups 32 .

The vertical units T11 to T14 are provided in this order from the left side (the negative side in the X direction in the figure) along the width direction. Each of the vertical units T11 and T12 has a hydrophobization processing unit that performs a hydrophobization processing on the wafer W. Within each unit, the hydrophobization processing units are stacked vertically in two stages, for example. Each of the vertical units T13 and T14 has a heating unit that heats the wafer W. In each unit, the heating units are stacked vertically in two stages, for example.

Further, in the first layer block L1, a wafer transfer mechanism M11 is provided in the transfer area M1 described above. The wafer transfer mechanism M11 has a transfer arm M11a that can advance and retreat, can move up and down, can rotate about a vertical axis, and can move in the width direction (X direction in the figure). Wafers W can be transferred between transfer tower 21 and antireflection film forming unit BCT1, between antireflection film forming unit BCT1 and vertical units T13 and T14, and the like, by transfer arm M11a. The transfer arm M11a can also access a transfer tower 41, which will be described later, in the right sub-block B22.

The second layer blocks L2 are configured in the same manner as the first layer blocks L1. In the drawings, etc., the transfer area provided in the second layer block L2 is M2, the antireflection film forming unit is BCT2, and the vertical units are T21 to T26. The wafer transfer mechanism provided in the transfer area M2 is M21, and the transfer arm of the wafer transfer mechanism M21 is M21a.

The third layer block L3 and the first layer block L1 differ in the type of liquid processing unit provided on the front side and the configuration of the vertical unit provided on the back side. In the third layer block L3, instead of the antireflection film forming unit BCT1, a developing unit DEV1 for developing the exposed wafer W is provided as a liquid processing unit. A developing liquid is supplied as a processing liquid from the nozzle 33 of the developing unit DEV1. Further, in the third layer block L3, the vertical units T31 to T34 each have the above-described heating unit. In the drawings, the transfer area provided in the third layer block L3 is M3, the wafer transfer mechanism provided in the transfer area M3 is M31, and the transfer arm of the wafer transfer mechanism M31 is M31a.

The fourth to sixth layer blocks L4 to L6 are configured similarly to the third layer block L3. In the drawings, etc., the transport areas provided in the fourth to sixth layer blocks L4 to L6 are M4 to M6, the developing units are DEV2 to DEV4, and the vertical units are T41 to T46, T51 to T56, and T61. to T66. The wafer transfer mechanisms provided in the transfer areas M4 to M6 are M41, M51 and M61, and the transfer arms of the wafer transfer mechanisms M41, M51 and M61 are M41a, M51a and M61a, respectively.

As shown in FIG. 1, the right sub-block B22 has a transfer tower 41 adjacent to the transport areas M1 to M6 of the left sub-block B21 in the width direction (the X direction in the drawing). As shown in FIG. 2, the transfer tower 41 is provided so as to straddle the first to sixth layer blocks P1 to P6 of the right sub-block B22.

The delivery tower 41 has a plurality of delivery modules stacked vertically. The delivery tower 41 is provided with delivery modules at height positions corresponding to the first to sixth layer blocks L1 to L6 and the first to sixth layer blocks P1 to P6. Specifically, the delivery tower 41 is provided with a delivery module TRS21 at a position corresponding to the first layer block L1 and the first layer block P1. Similarly, a transfer module TRS22 is provided at a position corresponding to the second layer block L2 and the second layer block P2. Transfer modules TRS23 to TRS26 and CPL23 to CPL26 are provided at positions corresponding to the third to sixth layer blocks L3 to L6 and the third to sixth layer blocks P3 to P6.
The delivery tower 41 is also provided with a delivery module TRS20 at a height position accessible by wafer transfer mechanisms Q11, Q21, and Q31, which will be described later. This transfer module TRS20 is used, for example, when a wafer W is transferred from the right sub-block B22 to the left sub-block B21.

In addition, as shown in FIG. 1, the right sub-block B22 is provided with a wafer transfer mechanism 42 on the far side of the transfer tower 41 (positive side in the Y direction in the figure). The wafer transfer mechanism 42 has a transfer arm 42 a that can move back and forth and move up and down, and can transfer the wafer W between the transfer modules of the transfer tower 41 .

Next, the first to sixth layer blocks P1 to P6 of the right subblock B22 will be described.
In this embodiment, the fourth to sixth layer blocks P4 to P6 are provided with processing units such as liquid processing units, but the first to third layer blocks P1 to P3 are not provided with processing units. A specific description will be given below. Note that FIG. 1 shows the configuration of the fourth layer block P4 among the first to sixth layer blocks P1 to P6 for the right sub-block B22.

The fourth-layer block P4 of the right sub-block B22 and the third-layer block L3 of the left sub-block B21 are different in configuration of the type of liquid processing unit provided on the front side. In the fourth layer block P4 of the right sub-block B22, instead of the developing unit DEV1, a resist film forming unit COT1 for forming a resist film on the wafer W on which the antireflection film is formed is provided as a liquid processing unit. . A resist liquid is supplied as a processing liquid from the nozzle 33 of the resist film forming unit COT1. In the drawings, etc., the transport area provided in the fourth layer block P4 is Q4, and the vertical units are U41 to U44. A wafer transfer mechanism provided in the transfer area Q4 is assumed to be Q41, and a transfer arm of the wafer transfer mechanism Q41 is assumed to be Q41a. The wafer W can be transferred between the transfer tower 41 and the resist film forming unit COT1, between the resist film forming unit COT1 and the vertical units U11 to U14, and the like by the transfer arm Q41a. The transfer arm Q41a can also access a delivery tower 51 of the interface block B3, which will be described later.

The fifth and sixth layer blocks P5 and P6 are configured similarly to the fourth layer block P4. In the drawings and the like, Q5 and Q6 are the transport areas provided in the fifth and sixth layer blocks P5 and P6, COT2 and COT3 are the resist film forming units, and U51 to U54 and U61 to U64 are the vertical units. and Also, the wafer transfer mechanisms provided in the transfer areas Q5 and Q6 are Q51 and Q61, and the transfer arms of the wafer transfer mechanisms Q51 and Q61 are Q51a and Q61a.

Similarly to the fourth to sixth layer blocks P4 to P6, the first to third layer blocks P1 to P3 are provided with transport areas Q1 to Q3, and the transport areas Q1 to Q3 are provided with transport arms Q41a, Q51a, Wafer transfer mechanisms Q41, Q51, Q61 having Q61a are provided. However, in the first to third layer blocks P1 to P3, unlike the fourth to sixth layer blocks P4 to P6, the transfer arms Q41a, Q51a, and Q61a are connected to the delivery tower 41 and the delivery tower 51 of the interface block B3, which will be described later. It is used when transferring the wafer W between. Further, unlike the fourth to sixth layer blocks P4 to P6, the first to third layer blocks P1 to P3 are not provided with processing units in front and back areas of the transport areas Q1 to Q3. In the first to third layer blocks P1 to P3, for example, the area on the front side of the transport areas Q1 to Q3 contains processing liquid bottles for storing various processing liquids such as resist liquids and pumps for pumping various processing liquids. It is used as a chemical chamber CHE for

Furthermore, in the processing block B2, as shown in FIGS. 1 and 3, ducts 23 and 43 are provided in the left sub-block B21 and the right sub-block B22, respectively. Specifically, in the left sub-block B21, a duct 23 is provided between the liquid processing units of the antireflection film forming units BCT1 and BCT2 and the developing units DEV1 to DEV4 and the carrier block B1. In the right sub-block B22, a duct 43 is provided between the resist film forming units COT1 to COT3 and the interface block B3 in plan view.

The ducts 23 and 43 supply clean air from the air conditioner S as an air supply source to each liquid processing unit. A filter unit F is provided above each of the antireflection film forming units BCT1 and BCT2, the developing units DEV1 to DEV4, and the resist film forming units COT1 to COT3. The filter unit F has, for example, a ULPA (Ultra Low Penetration Air) filter and a guide plate. The filter unit F purifies the air blown by the fan from the air conditioner S with the ULPA filter, and supplies the air toward the cup 32 in a downward flow (downflow) by the guide plate. The downstream end of the filter unit F of each liquid processing unit is connected to ducts 23 and 43, and the upstream ends of the ducts 23 and 43 are connected to one ends of flexible pipes 24 and 44 as connection pipes, respectively. The air conditioner S described above is connected to the other ends of the flexible pipes 24 and 44 .

As shown in FIG. 1, the interface block B3 is provided with a transfer tower 51 at a position adjacent to the central area in the depth direction of the left sub-block B21.
The delivery tower 51 has a plurality of delivery modules stacked vertically. The delivery tower 51 is provided with delivery modules TRS31 to TRS33 at height positions corresponding to the respective layer blocks of the first to third layer blocks P1 to P3 of the right sub-block B22.

Further, the interface block B3 is provided with a wafer transfer mechanism 52 on the exposure apparatus E side (the positive side in the X direction in the figure). The wafer transfer mechanism 52 has a transfer arm 52a that can advance and retreat, can move up and down, can rotate about a vertical axis, and can move in the depth direction (the Y direction in the figure). The wafer W can be transferred between the delivery tower 51 and the exposure apparatus E by the transfer arm 52a.

The coating and developing apparatus 1 configured as described above has a control section 100 . The control unit 100 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). This program storage unit stores programs for performing various types of processing on the wafer W by controlling the operations of the driving systems such as the various processing units and the wafer transfer mechanism. The program may be recorded in a computer-readable storage medium and installed in the control unit 100 from the storage medium. Part or all of the program may be realized by dedicated hardware (circuit board).

Next, coating and developing processing performed using the coating and developing apparatus 1 configured as described above will be described.

First, a carrier C containing a plurality of wafers W is carried into the carrier block B1 of the coating and developing apparatus 1. As shown in FIG. Then, the wafer transfer mechanism 13 sequentially transfers the wafers W in the carrier C to the transfer module TRS10 of the transfer tower 21 and into the left sub-block B21 of the processing block B2.

Subsequently, the wafer W is transferred to the transfer module TRS11 of the transfer tower 21 by the wafer transfer mechanism 22, for example.

Next, the wafer W is transported to, for example, a vertical unit T11 (hydrophobizing unit) by the wafer transport mechanism M11, and subjected to hydrophobizing treatment. After that, the wafer W is transferred by the wafer transfer mechanism M11, for example, in the order of delivery module CPL11→antireflection film forming unit BCT1→vertical unit T13 (heat treatment unit), and an antireflection film is formed thereon.

Subsequently, the wafer W is transferred to the transfer module TRS21 of the transfer tower 41 by the wafer transfer mechanism M11 and loaded into the right sub-block B22 of the processing block B2. After that, the wafer W is transferred to, for example, the delivery module CPL24 by the wafer transfer mechanism 42 and loaded into the fourth layer block P4. Then, the wafer W is transferred by the wafer transfer mechanism Q41 through the resist film forming unit COT1→vertical unit U41 (thermal processing unit)→delivery module TRS24 in this order, and a resist film is formed on the antireflection film.

Subsequently, the wafer W is transferred by the wafer transfer mechanism 42 to, for example, the transfer module TRS20 corresponding to the first layer block P1. Then, the wafer W is transferred to the transfer module TRS31 of the transfer tower 51 of the interface block B3 by the wafer transfer mechanism Q11.

Next, the wafer W is transferred to the exposure apparatus E by the wafer transfer mechanism 52 and exposed. After exposure, the wafer W is transported by the wafer transport mechanism 52 to, for example, the delivery module TRS33 of the delivery tower 51 . Subsequently, the wafer W is transferred to the processing block B2 again by the wafer transfer mechanism Q31 and transferred to the transfer module TRS20 corresponding to the third layer block P3 of the transfer tower 41. FIG.

After that, the wafer W is transferred to the transfer module TRS24 of the transfer tower 41 by the wafer transfer mechanism 42, for example. Subsequently, the wafer W is loaded into the left sub-block B21 by the wafer transport mechanism M41, transported to, for example, the vertical unit T41 (thermal processing unit), and subjected to PEB processing. After that, the wafer W is transferred by the wafer transfer mechanism M41 in the order of delivery module CPL24→development unit DEV1. As a result, the wafer W is developed and a resist pattern is formed on the wafer W. As shown in FIG.

After the development process, the wafer W is transferred from the vertical unit T43 (heat treatment unit) to the transfer module CPL14 by the wafer transfer mechanism M41. After that, the wafer W is transferred to the transfer module TRS10 by the wafer transfer mechanism 22 . The wafer W is unloaded from the processing block B<b>2 and returned to the carrier C by the wafer transport mechanism 13 .

Subsequently, the ducts 23, 43 and flexible tubes 24, 44 will be described in more detail. In the following description, the flow rate of air supplied through the ducts 23 and 43 to the antireflection film forming units BCT1 and BCT2, the developing units DEV1 to DEV4, and the resist film forming units COT1 to COT3 is shall be equal to each other.

The ducts 23 and 43 are provided to extend vertically as shown in FIG. The duct 23 is connected from its lower end to its upper end to six liquid processing units, antireflection film forming units BCT1 and BCT2 and developing units DEV1 to DEV4. On the other hand, the duct 43 is connected to three liquid processing units, resist film forming units COT1 to COT3, from the center in the vertical direction to the upper end. That is, the ducts 23 and 43 are different in the number of connected liquid processing units.

Also, the lengths of the ducts 23 and 43 are equal to each other. On the other hand, the internal cross-sectional areas of the ducts 23 and 43 are values corresponding to the total flow rate of air to the liquid processing units connected to the ducts. In this embodiment, since the flow rates of the air supplied to the liquid processing units are equal to each other, the internal cross-sectional areas of the ducts 23 and 43 are determined according to the number of liquid processing units connected to the ducts. value. Since six ducts 23 and three ducts 43 are connected to the liquid processing unit, the internal cross-sectional area of the duct 43 is half that of the duct 23, which is small.
Thus, by setting the internal cross-sectional areas of the ducts 23 and 43 to a value corresponding to the total flow rate of air to the liquid processing units connected to the ducts, the flow speed of the duct 43 is are combined. As a result, the ducts 23 and 43 have the same air flow velocity in the ducts.

Also, the lengths of the flexible tubes 24 and 44 are equal to each other. On the other hand, the internal cross-sectional area of the flexible pipes 24 and 44 has a value corresponding to the total flow rate of air to the liquid processing units connected to the ducts to which the flexible pipes are connected. In this embodiment, since the flow rates of the air supplied to the liquid processing units are equal to each other, the internal cross-sectional areas of the flexible pipes 24 and 44 are the liquid processing units connected to the ducts to which the flexible pipes are connected. It is a value according to the number of units. Since six ducts 23 and three ducts 43 are connected to the liquid processing unit, the internal cross-sectional area of the flexible tube 44 is half that of the flexible tube 24 .
In this way, by setting the internal cross-sectional area of the flexible pipes 24 and 44 to a value corresponding to the total flow rate of air to the liquid processing unit connected to the duct to which the flexible pipes are connected, a flexible pipe with a high flow velocity can be obtained. The flow velocity of the flexible tube 44 is matched to the flow velocity of the tube 24 . As a result, the flexible tubes 24 and 44 have the same air flow velocity in the flexible tubes. That is, the ducts 23 and 43 have the same flow velocity of the air supplied to the ducts through the flexible pipes.

In the above description, both the flow velocity of the air in the ducts 23, 43 and the flow velocity of the air supplied to the ducts 23, 43 via the flexible tubes 24, 44 are equal between the ducts, but either one may be equal between ducts.

As described above, in this embodiment, the coating and developing apparatus 1 has two ducts 23 and 43 for supplying air to the liquid processing unit, and each duct has a flexible pipe connecting the duct and the air conditioner S. 24, 44, and the two ducts 23, 43 are connected to different numbers of liquid treatment units. Further, in this embodiment, at least one of the flow velocity of the air in the ducts 23 and 43 and the flow velocity of the air supplied to the ducts 23 and 43 via the flexible tubes 24 and 44 is equal between the ducts.
When the air flow velocities in the ducts 23 and 43 are equal between the ducts, the time the air stays in the duct 43 with a small number of connections to the liquid processing unit is longer than the time it stays in the duct 23 with a large number of connections. never become. Therefore, in the duct 43 to which the number of connected liquid processing units is small, the liquid processing unit connected to the upstream side of the duct and the liquid processing unit connected to the downstream side of the duct (for example, the resist film forming unit COT1 and the same unit COT3) It is possible to prevent the temperature difference and humidity difference of the supplied air from becoming large. Furthermore, when the air velocities in the ducts 23 and 43 are equal between the ducts, the n-th (n is an integer of 4 to 6) layer block liquid processing unit connected to the duct 23 and the liquid processing unit connected to the duct 43 It is possible to reduce the difference in temperature and humidity of the supplied air with the liquid processing unit of the n-layer block.
Further, when the flow velocities of the air supplied to the ducts 23, 43 via the flexible pipes 24, 44 are equal between the ducts, in other words, when the flow velocities of the air in the flexible pipes 24, 44 are equal among the flexible pipes, They are as follows. That is, in this case, the time that the air stays in the flexible pipes 44 connecting the ducts 43 with a small number of connections of the liquid processing unit is longer than the time that the air stays in the flexible pipes 24 connecting the ducts 23 with a large number of connections. never become. Therefore, the temperature and humidity of the air supplied to the ducts 43 from the flexible pipes 44 connecting the ducts 43 with a small number of connections, and the temperature and humidity of the air supplied to the ducts 23 from the flexible pipes 24 connecting the ducts 23 with a small number of connections. There is no big difference between the temperature and humidity of the air in the air. Therefore, it is possible to reduce the difference in temperature and humidity of the supplied air between the liquid processing unit connected to the duct 23 and the liquid processing unit connected to the duct 43 .
Therefore, according to this embodiment, it is possible to reduce the unit-to-unit differences in the temperature and humidity of the clean air supplied to each liquid processing unit.

In addition, when the processing block is composed of a plurality of sub-blocks from the viewpoint of transportation etc., there are cases where sub-blocks of approximately the same size are used for reasons such as design efficiency. There are times when it is not possible to fill the space with only a processing unit or heat treatment unit. For example, in such a case, the number of liquid processing units connected may differ among the ducts, as in the present embodiment.

Next, another configuration for reducing the difference in temperature and humidity between liquid processing units in the coating and developing apparatus 1 will be described.

5 and 6 are a perspective view and a top view, respectively, partially and schematically showing the inside of the processing block B2.
As shown in FIG. 5, the duct 23 is covered with a heat insulating member 23a that insulates air flowing through the duct 23 from heat outside the duct 23. As shown in FIG. The heat insulating member 23a is made of, for example, a resin material with low thermal conductivity. In the example of the figure, the heat insulating member 23a is formed on the front side (negative side in the Y direction in the figure), the left side (negative side in the X direction in the figure), and the back side (positive side in the Y direction in the figure) of the duct 23 formed in a rectangular parallelepiped shape. ) in the vertical direction.
Moreover, as shown in FIG. 6, the heat insulating member 23a is attached to the duct 23 so that an air layer 23b is formed between the heat insulating member 23a and the outer peripheral surface of the duct 23. As shown in FIG.

By providing the heat insulating member 23a as described above, it is possible to prevent the temperature of the air flowing through the duct 23 from rising due to the influence of the outside of the duct. When the temperature of the air flowing through the duct 23 rises under the influence of the outside, a temperature difference and a humidity difference occur between the liquid processing unit connected to the upstream side of the duct and the liquid processing unit connected to the downstream side of the duct. becomes larger. On the other hand, by providing the heat insulating member 23a to prevent the temperature of the air flowing through the duct 23 from rising due to the influence of the outside of the duct, it is possible to prevent the temperature difference and the humidity difference from increasing.
Moreover, by attaching the heat insulating member 23a so as to form an air layer 23b, it is possible to further reduce the influence of the outside of the duct on the air inside the duct. Therefore, it is possible to further reduce the difference in temperature and humidity of the supplied air between the liquid processing unit on the upstream side of the duct and the liquid processing unit on the downstream side of the duct.

Although not shown, the duct 43 is similarly provided with a heat insulating member.

7 and 8 are respectively a front view and a perspective view partially and schematically showing the upper part of the processing block B2.
As shown in FIG. 7, the processing block B2 has a housing 10 that accommodates various processing units and ducts 23 and 43. As shown in FIG. In the processing block B2, a plurality of electrical equipment units 200, which are units of electrical equipment for liquid processing units and the like, are provided above the housing 10. As shown in FIG.

As shown in FIG. 8, the ceiling surface 10a of the housing 10 is provided with a pair of screws for moving the electrical unit 200 in the depth direction (the Y direction in the figure) and attaching/detaching the electrical unit 200 to/from the ceiling surface 10a. of guide rails 210 are provided. A guide groove 211 is formed in the guide rail 210 so as to extend in the depth direction.

The electrical unit 200 has a unit main body 201, and electrical components are housed inside the unit main body 201. As shown in FIG. Electrical equipment includes, for example, control equipment, amplifiers, power supplies, drivers, contactors, breakers, and the like.
A projecting member 202 is provided on the lower side of the unit main body 201 . The projecting member 202 has a projection 203 extending in the depth direction. The electrical unit 200 is configured to be movable in the depth direction along the guide rails 210 by the guide grooves 211 of the guide rails 210 and the projections 203 of the projecting members 202 .

In this example, the projecting member 202 of the electrical unit 200 is attached to the lower surface of the unit main body 201 via a supporting member 204 . The support member 204 has legs 205 formed to extend in the vertical direction. The electrical unit 200 is elevated by the support member 204 having the leg portion 205 and is provided above the housing 10 at a position separated from the ceiling surface 10 a of the housing 10 . As a result, the air supplied to the liquid processing units near the ceiling surface 10a of the housing 10 in the processing block B2 is not affected by the heat from the electrical unit 200. FIG. Therefore, heat from the electrical unit 200 does not cause a difference in temperature or humidity in the supplied air between the liquid processing unit near the ceiling surface 10a and the other liquid processing units.
When the electrical unit 200 is raised in this way, it is preferable to reduce the height of the unit body 201 by increasing the mounting density of the electrical components in the unit body 201 .

9 and 10 are a perspective view and a bottom view, respectively, partially and schematically showing the bottom surfaces of the processing block B2 and the carrier block B1.
As shown in FIGS. 9 and 10, a flexible tube 24 connected to a duct 23 extends and is exposed from the bottom surface of the housing 10 of the processing block B2. A partition plate 24a is provided around the flexible tube 24 in a bottom view. A specific example of the installation position of the partition plate 24a is as follows.

An exhaust hole 301 is provided on the lower surface of the carrier block B1. The exhaust hole 301 is for discharging air discharged by a fan (not shown) for adjusting the pressure inside the carrier block B1 to the outside of the carrier block B1. A partition plate 24a is provided between the exhaust hole 301 and the flexible tube 24 in bottom view.
The partition plate 24a may also be provided on the back side of the flexible tube 24 (positive side in the Y direction in the figure). Furthermore, a partition plate 24a may be provided on the front side of the flexible tube 24 (negative side in the Y direction in the drawing).

By providing the partition plate 24a as described above, the air in the flexible tube 24 is not affected by ambient heat, particularly the heat of the exhaust from the exhaust holes 301 on the lower surface of the carrier block B1. Therefore, due to the heat from the outside of the flexible pipe 24, the liquid processing unit connected to the duct 23 connected by the flexible pipe 24 and the liquid processing unit connected to the duct 43 connected by the flexible pipe 44 Therefore, there is no difference in temperature or humidity in the supplied air.

FIG. 11 is a perspective view schematically showing the lower portion of the processing block B2.
As shown in the figure, the processing block B2 has a cover 400 that covers from the front the gap between the bottom surface of the housing 10 and the floor FL on which the coating and developing apparatus 1 is installed. A large number of through holes 401 are formed through the cover 400 in the depth direction.
By providing such a cover 400 , it is possible to prevent heat from accumulating in the lower side of the housing 10 . Therefore, the liquid processing units near the bottom surface of the housing 10 are not affected by the heat trapped under the housing 10 . Therefore, there is no difference in temperature or humidity between the processing unit near the bottom surface of the housing 10 and the other processing units due to the heat trapped under the housing 10 .

Incidentally, the coating and developing apparatus 1 may be provided with a cabinet for storing electric components on the side of the processing block B2.
FIG. 12 is a perspective view showing an example of the cabinet.
A cabinet 500 in the figure is provided with a box 501 for storing electrical components. The box 501 is provided, for example, on the right side of the fourth layer block P4 of the right sub-block B22 of the processing block B2 (the positive side in the X direction in the right view).

The box 501 has a top plate 510 and a frame 520 to which the top plate is attached.
A through hole 511 is formed through the top plate 510 in the vertical direction. As a result, the heat of the electric components inside the box 501 does not stay inside the box 501 . Therefore, the liquid processing unit near the box 501 and the air in the duct 43 are not affected by the heat trapped in the box 501 . Therefore, the heat trapped inside the box 501 does not cause a difference in temperature or humidity between the processing unit near the box 501 and the other processing units.

Further, the housing 10 of the processing block B2 is formed with a through hole 10b penetrating in the width direction above the box body 501 on the side surface of the cabinet 500 side. By forming the through holes 10b, the heat transmitted from the box 501 to the processing block B2 can be released through the through holes 10b.

Further, the cabinet 500 has a cover plate 502 that covers the through hole 511 of the top plate 510 from above at a position facing the top plate 510 of the box 501 . By providing the cover plate 502, it is possible to prevent electrical components in the box 501 from being damaged when water is discharged from a sprinkler (not shown). Note that the distance between the cover plate 502 and the top plate 510 is, for example, 150 mm.

13 is a partially enlarged view of FIG. 12. FIG.
As shown in the figure, a top plate 510 of the box 501 is provided with L-shaped legs 512 when viewed from the side. A gap 521 can be formed between the top plate 510 and the frame 520 by attaching the top plate 510 to the upper surface of the frame 520 via the legs 512 . Through this gap 521, the heat of the electrical components in the box 501 can be released.

In the above example, the processing block B2 consists of two sub-blocks, but may consist of three or more sub-blocks.
Alternatively, the processing block B2 may be composed of one block. In this case, the delivery tower 41 and the wafer transfer mechanism 42 are omitted. In this case, the wafer transfer mechanisms Q11, Q21, Q31 are omitted, and the wafer transfer mechanisms M11, M21, M31 are configured to be accessible to the delivery tower 51 as well. Further, the wafer transfer mechanisms Q41, Q51, Q61 are also omitted, the wafer transfer mechanism M41 is configured to be accessible to COT1 and the vertical units U41 to U44, and the wafer transfer mechanisms M51, M61 are similarly configured.

Further, in the above example, the number of connections is plural even in a duct with a small number of connections of liquid processing units, but the number of connections may be one in a duct with a small number of connections. In the above example, the ratio of the number of connections between the ducts with a small number of connections and the number of ducts with a large number of connections was 1:2, but it may be larger or smaller. In other words, the number of connections should be different between ducts.
In addition, the above examples are intended to make the flow velocity of the air in the ducts "equal" between the ducts and to make the flow velocity of the air supplied to the ducts via the connecting pipes "equal" between the ducts. However, "equal to" here does not require exact agreement of the measured values of flow velocity. As long as the duct or connecting pipe has the structure disclosed in the above example, the effect of reducing the difference in the temperature and humidity of the clean air supplied to each processing unit between the units is exhibited, as a result of the comparison, Even the measured values of the flow rate with some difference are included in the range of "equal".

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

Note that the following configuration also belongs to the technical scope of the present disclosure.
(1) A substrate processing apparatus having a plurality of processing units for processing substrates,
having a plurality of ducts supplying air to the processing unit;
Each duct has a connecting pipe that connects the duct and an air supply source,
the plurality of ducts are connected to different numbers of the processing units;
A substrate processing apparatus, wherein at least one of a flow velocity of air in the duct and a flow velocity of air supplied to the duct via the connecting pipe is equal between the ducts.
According to (1) above, in a substrate processing apparatus having a plurality of processing units, differences in temperature and humidity of clean air supplied to each processing unit can be reduced.

(2) Of the following conditions (A) and (B),
(A) each of said ducts has a cross-sectional area corresponding to the total flow of air to said processing unit connected to said duct;
(B) each of the connecting pipes has a cross-sectional area corresponding to the total flow of air to the processing unit connected to the duct to which the connecting pipe connects;
The substrate processing apparatus according to (1) above, which satisfies at least one of them.

(3) The substrate processing apparatus according to (1) or (2), wherein the duct is covered with a heat insulating member that insulates air flowing through the duct from heat outside the duct.

(4) The substrate processing apparatus according to (3), wherein an air layer is formed between the duct and the heat insulating member.

(5) The substrate processing apparatus according to any one of (1) to (4) above, including a housing for housing the processing unit.

(6) having electrical equipment;
The substrate processing apparatus according to (5), wherein the electrical component is provided above the housing at a position spaced apart from the housing.

(7) the housing accommodates the duct, and the connection pipe extends from the bottom surface of the housing;
The substrate processing apparatus according to (5) or (6) above, wherein a partition plate is provided around the connection pipe when viewed from below.

(8) having a carrier block into and out of which a carrier containing a plurality of substrates is loaded and unloaded;
the carrier block is adjacent to the housing;
The substrate processing apparatus according to (7), wherein the partition plate is provided between the exhaust hole formed in the lower surface of the carrier block and the connection pipe when viewed from the bottom.

(9) having a cover covering a gap between the bottom surface of the housing and the floor surface on which the substrate processing apparatus is installed;
The substrate processing apparatus according to any one of (5) to (8), wherein the cover has a through hole.

(10) The substrate processing apparatus according to any one of (5) to (9) above, further comprising a cabinet provided with a box body for housing electrical components on the side of the housing.

(11) The substrate processing apparatus according to (10), wherein the top plate of the box is formed with a through hole.

(12) The substrate processing apparatus according to (11), wherein the cabinet has a cover plate that covers the through-hole of the top plate from above at a position facing the top plate of the box.

(13) The box has a top plate and a frame to which the top plate is attached,
The substrate processing apparatus according to any one of (10) to (12), wherein a gap is provided between the frame and the top plate.

(14) The substrate processing apparatus according to any one of (10) to (13), wherein a through hole is formed above the box on the side surface of the housing.

(15) In a substrate processing apparatus having a plurality of processing units for processing substrates, an air supply method for supplying clean air to each of the processing units, comprising:
The substrate processing apparatus is
having a plurality of ducts supplying air to the processing unit;
Each duct has a connecting pipe that connects the duct and an air supply source,
the plurality of ducts are connected to different numbers of the processing units;
at least one of the flow velocity of air in the duct and the flow velocity of air supplied to the duct via the connecting pipe is equal between the ducts;
The air supply method is
An air supply method for supplying clean air from the air supply source to each of the processing units through the connecting pipe and the duct.

1 coating and developing devices BCT1, BCT2 antireflection film forming units COT1 to COT3 resist film forming units DEV1 to DEV4 developing units 23, 43 ducts 24, 44 flexible tube W wafer

Claims (12)

A substrate processing apparatus having a plurality of processing units for processing substrates,
a plurality of ducts supplying air to the processing unit;
a housing that houses the processing unit,
Each duct has a connecting pipe that connects the duct and an air supply source,
The housing houses the duct, and the connecting pipe extends from the housing,
A substrate processing apparatus, wherein a partition plate is provided around the connection pipe. The connection pipe extends from the lower surface of the housing,
2. The substrate processing apparatus according to claim 1, wherein a partition plate is provided around said connection pipe when viewed from below. a carrier block into which a carrier containing a plurality of the substrates is loaded/unloaded;
the carrier block is adjacent to the housing;
3. The substrate processing apparatus according to claim 2, wherein said partition plate is provided between an exhaust hole formed in a lower surface of said carrier block and said connection pipe when viewed from below. 4. The substrate processing apparatus according to claim 1, wherein said duct is covered with a heat insulating member that insulates air flowing through said duct from heat outside said duct. 5. The substrate processing apparatus according to claim 4, wherein an air layer is formed between said duct and said heat insulating member. have electrical equipment,
6. The substrate processing apparatus according to claim 1, wherein said electrical equipment is provided above said housing at a position spaced from said housing. a cover covering a gap between the bottom surface of the housing and a floor surface on which the substrate processing apparatus is installed;
7. The substrate processing apparatus according to claim 1, wherein said cover has a through hole. 8. The substrate processing apparatus according to any one of claims 1 to 7, further comprising a cabinet provided with a box body for housing electrical components on the side of said housing. 9. The substrate processing apparatus according to claim 8, wherein the top plate of the box has through holes. 10. The substrate processing apparatus according to claim 9, wherein said cabinet has a cover plate at a position facing said top plate of said box body, covering said through-hole of said top plate from above. The box has a top plate and a frame to which the top plate is attached,
11. The substrate processing apparatus according to claim 8, wherein a gap is provided between said frame and said top plate. The substrate processing apparatus according to any one of claims 8 to 11, wherein a through hole is formed in a side surface of said housing above said box.

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