JP2021044453A - Substrate processing apparatus and air supply method - Google Patents

Abstract

To reduce a difference in temperature and humidity of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.SOLUTION: A substrate processing apparatus having a plurality of processing units that process substrates includes a plurality of ducts that supply air to the processing unit, and further includes a connecting pipe that connects the duct and an air supply source for each duct, and the plurality of ducts are connected to different numbers of the processing units, and at least one of the flow rate of air in the duct and the flow rates of air supplied to the duct through the connecting pipe is equal between the ducts.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a substrate processing apparatus and an air supply method.

Patent Document 1 discloses a substrate processing apparatus having a processing station in which a first processing unit portion and a second processing unit portion are provided in one direction on the front side of the apparatus. In the first processing unit unit, the resist coating processing unit is stacked in three stages, the bottom coating unit forming the antireflection film is stacked in two stages, and the bottom coating unit is stacked in five stages in order from the bottom. It is stacked in 5 layers. Further, the substrate processing apparatus of Patent Document 1 is provided with two ducts for supplying clean air from an air conditioner provided outside the apparatus to each processing unit unit. The air supplied through the duct is cleaned by a ULPA filter provided on the upper part of the processing station, and is supplied to each processing unit in a downflow.

Japanese Unexamined Patent Publication No. 2007-88485

The technique according to the present disclosure reduces the difference in temperature and humidity between units of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.

One aspect of the present disclosure is a substrate processing apparatus having a plurality of processing units for processing a substrate, having a plurality of ducts for supplying air to the processing units, and for each duct, the duct and an air supply source. The plurality of ducts are connected to different numbers of the processing units, and the flow velocity of air in the duct and the flow velocity of air supplied to the duct through the connecting pipe. At least one of the above is equal between the ducts,

According to the present disclosure, in a substrate processing apparatus having a plurality of processing units, it is possible to reduce the difference in temperature and humidity between units of clean air supplied to each processing unit.

It is a top view which shows the outline of the structure of the coating development apparatus as a substrate processing apparatus which concerns on this embodiment schematically. FIG. 5 is a vertical sectional front view schematically showing an outline of the internal configuration of the coating and developing apparatus of FIG. 1. It is a figure which shows typically the state which was seen from the front side of the outline of the internal structure of the coating developing apparatus of FIG. It is a figure which shows typically the state which was seen from the back side of the outline of the internal structure of the coating developing apparatus of FIG. It is a perspective view which shows the inside of the processing block of the coating development apparatus of FIG. 1 partially and schematicly. It is a top view which shows the inside of the processing block of the coating development apparatus of FIG. 1 partially and schematicly. It is a front view which shows the upper part of the processing block of the coating development apparatus of FIG. 1 partially and schematicly. It is a perspective view which shows the upper part of the processing block of the coating development apparatus of FIG. 1 partially and schematicly. It is a perspective view which shows the lower surface of the processing block and the carrier block of the coating development apparatus of FIG. 1 partially and schematicly. It is a bottom view which shows the lower surface of the processing block and the carrier block of the coating development apparatus of FIG. 1 partially and schematicly. It is a perspective view which shows the lower part of the processing block of the coating development apparatus of FIG. 1 schematically. It is a perspective view which shows an example of the cabinet which stores the electrical equipment provided on the side of a processing block. It is a partially enlarged view of FIG.

In a photolithography step in a semiconductor device manufacturing process or the like, a series of processes is performed to form a desired resist pattern on, for example, a semiconductor wafer (hereinafter, referred to as “wafer”). In the above series of processes, for example, a resist film forming process of supplying a resist solution onto a wafer to form a resist film, an exposure process of exposing the resist film, and a developing process of supplying a developing solution to the exposed resist film for development. Etc. are performed. Of these processes, processes other than the exposure process, such as the resist film forming process and the developing process, are performed by the coating and developing device, which is a substrate processing device.

The coating and developing processing apparatus is provided with various processing units such as a liquid processing unit for liquid processing the wafer. Further, for example, clean air is supplied to each of the liquid treatment units in order to keep the atmosphere in the unit clean. A duct is provided for supplying this clean air and is connected to each liquid treatment unit (see Patent Document 1).

By the way, for example, when the number of liquid processing units mounted is large, a plurality of (for example, two) ducts may be provided. Further, when a plurality of ducts are provided, the number of processing units connected to each duct may differ between the ducts. If the number of processing units connected to each duct is different in this way, the air flow velocity may differ between the ducts. For example, when the first and second ducts having the same dimensions are provided, the number of connected processing units is smaller in the second duct than in the first duct, and the flow rate of air to each processing unit is equal, the first The air flow velocity in the second duct is slower than that in the first duct. If the flow velocity in the duct is slow, the air supplied through the duct will stay in the duct for a longer period of time, so that the temperature will be higher due to the influence of heat from outside the duct, and the humidity will be relatively high. It goes down. Therefore, in the second duct having a slower flow velocity, the temperature difference and humidity of the air supplied between the processing unit connected to the upstream side of the duct and the processing unit connected to the downstream side of the duct are compared with those of the first duct. The difference will be large.

Further, if the number of processing units connected to each duct is different between the ducts, the temperature and humidity of the air supplied to each duct may be different. For example, if the first and second ducts are provided, the second duct has fewer processing units connected, and the flow of air to each processing unit is equal, then the first and second ducts and the air If the dimensions of the first and second connecting pipes connecting the supply sources are the same, the air flow velocity in the second connecting pipe is slower than that in the first connecting pipe. If the flow velocity in the connecting pipe is slow, the air supplied to each duct through the connecting pipe will be present in the connecting pipe for a longer period of time, so that the temperature becomes higher due to the influence of heat from the outside of the connecting pipe. In addition, the humidity drops relatively. Therefore, as described above, when the flow velocity of the air in the second connecting pipe is slower than that in the first connecting pipe, the second connecting pipe is compared with the air supplied to the first duct through the first connecting pipe. The temperature of the air supplied to the second duct through the connecting pipe of the above becomes high. Therefore, a temperature difference and a humidity difference of the supplied air occur between the processing unit connected to the first duct and the processing unit connected to the second duct.
If the temperature and humidity of the supplied air are different between the processing units, for example, when the resist film is formed by the processing units, a film thickness difference or the like will occur between the units.

Therefore, the technique according to the present disclosure reduces the difference in temperature and humidity between units of clean air supplied to each processing unit in a substrate processing apparatus having a plurality of processing units.
In particular, in a substrate processing apparatus having a plurality of ducts and the number of connected processing units is different between the ducts, the difference in temperature and humidity of clean air supplied to each processing unit is reduced.

Hereinafter, the substrate processing apparatus and the air supply method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.

FIG. 1 is a plan view schematically showing an outline of the configuration of a coating and developing apparatus 1 as a substrate processing apparatus. FIG. 2 is a longitudinal front view schematically showing an outline of the internal configuration of the coating and developing apparatus 1. 3 and 4 are diagrams schematically showing a state of the internal configuration of the coating developing apparatus 1 as viewed from the front side and the back side.

In the coating developing apparatus 1, as shown in FIG. 1, the carrier block B1, the processing block B2, and the interface block B3 as a relay block are arranged in this order along the width direction (X direction in the figure). It is provided. In the following description, the above-mentioned width direction may be described as a left-right direction. The exposure device E is connected to the right side of the interface block B3 (on the positive side in the X direction in the figure).

The carrier block B1 is a block in which a carrier C for collectively transporting a plurality of wafers W as a substrate is carried in and out.
The carrier block B1 is provided with a carrier mounting table 11. The carrier mounting table 11 is provided with a mounting plate 12 on which the carrier C is mounted, for example, when the carrier C is carried in and out from the outside of the coating and developing apparatus 1. A plurality of mounting plates 12 (four in the example of the figure) are provided along the width direction (X direction in the figure) and the depth direction (Y direction in the figure) orthogonal to each other in the horizontal plane. Further, the carrier block B1 is provided with a wafer transfer mechanism 13 between the carrier mounting table 11 and the processing block B2. The wafer transfer mechanism 13 has a transfer arm 13a configured to be able to move forward and backward, move up and down, rotate around a vertical axis, and move in the depth direction, and has a carrier C on each mounting plate 12 and a carrier C described later. The wafer W can be transported to and from the delivery tower 21.

The processing block B2 is a block provided with a processing unit for processing the wafer W before or after exposure. In the present embodiment, a plurality of processing blocks B2 connected in the left-right direction (X direction in the figure) (2 in the example in the figure). It is composed of sub-blocks B21 and B22. In the following, the subblock B21 on the carrier block B1 side will be referred to as the left subblock B21, and the subblock B22 on the interface block B3 side will be referred to as the right subblock B22.

As shown in FIGS. 2 to 4, the left subblock B21 and the right subblock B22 are multi-layered in the vertical direction, and the first to sixth layer blocks L1 to L6 and the first to sixth layer blocks P1 are respectively. It has ~ P6. Various processing units are provided in each layer block.

The left sub-block B21 is provided with a delivery tower 21 on the carrier block B1 side so as to straddle the first to sixth layer blocks P1 to P6.
The delivery tower 21 is a stack of a plurality of delivery modules in the vertical direction. The delivery tower 21 is provided with a delivery module at a height position corresponding to each layer block of the first to sixth layer blocks L1 to L6. Specifically, the delivery tower 21 is provided with delivery modules TRS11 and CPL11 at positions corresponding to the first layer block L1. Similarly, delivery modules TRS12 to TRS16 and CPL12 to CPL16 are provided at positions corresponding to the second to sixth layer blocks L2 to L6. The delivery module with "TRS" and the delivery module with "CPL" are configured in substantially the same manner, and only the latter has the wafer W on the stage on which the wafer W is placed. It differs in that a flow path of the medium is formed to regulate the temperature.

Further, the delivery tower 21 is provided with the delivery module TRS10 at a height position in the carrier block B1 that can be accessed by the wafer transfer mechanism 13, specifically, at a position between the delivery module CPL12 and the delivery module TRS13. ing. This delivery module TRS10 is used, for example, when loading and unloading a wafer between the left subblock B21 and the carrier block B1.

As shown in FIG. 1, the delivery tower 21 is provided at the center position in the depth direction of the left subblock B21, and the wafer transfer mechanism 22 is located on the back side of the delivery tower 21 (on the positive side in the Y direction in the drawing). Is provided. The wafer transfer mechanism 22 has a transfer arm 22a configured to be able to move forward and backward and move up and down, and can transfer the wafer W between the transfer modules of the transfer tower 21.

Subsequently, the first to sixth layer blocks L1 to L6 of the left subblock B21 will be described. Note that FIG. 1 shows the configuration of the first layer block L1 for the left subblock B21, and the first layer block L1 will be specifically described below.

As shown in FIG. 1, a transport region M1 extending in the width direction from the delivery tower 21 is formed in the center in the depth direction of the first layer block L1 in the depth direction.

Various units are provided in the first layer block L1 in a region on the front side (negative side in the Y direction in the figure) and a region on the back side (positive side in the Y direction in the figure) of the transport region M1.
Specifically, an antireflection film forming unit BCT1 which is a liquid treatment unit for liquid-treating the wafer W with a treatment liquid is provided in the front side region of the first layer block L1, and various types are provided in the back side region. Vertical units T11 to T14 having the unit are provided.

The antireflection film forming unit BCT1 forms an antireflection film on the wafer W. The antireflection film forming unit BCT1 includes a spin chuck 31 that holds and rotates the wafer W, and a cup 32 that surrounds the wafer W on the spin chuck 31 and collects the processing liquid scattered from the wafer W. Two pairs of the spin chuck 31 and the cup 32 are provided along the width direction. Further, the antireflection film forming unit BCT1 is provided with a nozzle 33 that discharges a processing liquid for forming an antireflection film onto the wafer W held by the spin chuck 31. The nozzle 33 is configured to be movable between the cups 32 and is shared between the cups 32.

The vertical units T11 to T14 are provided in this order from the left side (negative side in the X direction in the figure) along the width direction. Each of the vertical units T11 and T12 has a hydrophobizing treatment unit that performs hydrophobizing treatment on the wafer W, and the hydrophobizing treatment units are laminated in, for example, two stages in the vertical direction in each unit. Each of the vertical units T13 and T14 has a heating unit that heat-treats the wafer W, and the heating units are laminated in, for example, two stages in the vertical direction in each unit.

Further, in the first layer block L1, a wafer transfer mechanism M11 is provided in the transfer area M1 described above. The wafer transfer mechanism M11 has a transfer arm M11a configured to be movable back and forth, move up and down, rotate around a vertical axis, and move in the width direction (X direction in the figure). With this transfer arm M11a, the wafer W can be delivered between the delivery tower 21 and the antireflection film forming unit BCT1, between the antireflection film forming unit BCT1 and the vertical units T13 and T14, and the like. The transport arm M11a can also access the delivery tower 41 described later in the right subblock B22.

The second layer block L2 is configured in the same manner as the first layer block L1. In the drawings and the like, the transport region provided in the second layer block L2 is M2, the antireflection film forming unit is BCT2, and the vertical units are T21 to T26. Further, the wafer transfer mechanism provided in the transfer area M2 is referred to as M21, and the transfer arm included in the wafer transfer mechanism M21 is referred to as M21a.

The type of the liquid treatment unit provided on the front side and the configuration of the vertical unit provided on the back side are different between the third layer block L3 and the first layer block L1. In the third layer block L3, as a liquid processing unit, instead of the antireflection film forming unit BCT1, a developing unit DEV1 that develops the exposed wafer W is provided. The developing solution is supplied as a processing solution from the nozzle 33 of the developing unit DEV1. Further, in the third layer block L3, the vertical units T31 to T34 each have the above-mentioned heating unit. In the drawings and the like, the transfer region provided in the third layer block L3 is referred to as M3, the wafer transfer mechanism provided in the transfer area M3 is referred to as M31, and the transfer arm included in the wafer transfer mechanism M31 is referred to as M31a.

The fourth to sixth layer blocks L4 to L6 are configured in the same manner as the third layer block L3. In the drawings and the like, the transport regions provided in the 4th to 6th layer blocks L4 to L6 are M4 to M6, the developing units are DEV2 to DEV4, and the vertical units are T41 to T46, T51 to T56, and T61. ~ T66. The wafer transfer mechanisms provided in the transfer areas M4 to M6 are M41, M51, and M61, and the transfer arms of the wafer transfer mechanisms M41, M51, and M61 are M41a, M51a, and M61a, respectively.

As shown in FIG. 1, the right subblock B22 has a delivery tower 41 at a position adjacent to the transport areas M1 to M6 of the left subblock B21 in the width direction (X direction in the figure). As shown in FIG. 2, the delivery tower 41 is provided so as to straddle the first to sixth layer blocks P1 to P6 of the right subblock B22.

In the delivery tower 41, a plurality of delivery modules are stacked in the vertical direction. The delivery tower 41 is provided with a delivery module at a height position corresponding to each layer block of the first to sixth layer blocks L1 to L6 and the first to sixth layer blocks P1 to P6. Specifically, the delivery tower 41 is provided with a delivery module TRS21 at a position corresponding to the first layer block L1 and the first layer block P1. Similarly, the delivery module TRS22 is provided at a position corresponding to the second layer block L2 and the second layer block P2. Further, delivery modules TRS23 to TRS26 and CPL23 to CPL26 are provided at positions corresponding to the third to sixth layer blocks L3 to L6 and the third to sixth layer blocks P3 to P6.
Further, the delivery tower 41 is provided with a delivery module TRS20 at a height position accessible to the wafer transfer mechanisms Q11, Q21, and Q31 described later. This delivery module TRS20 is used, for example, when the wafer W is carried from the right subblock B22 to the left subblock B21.

Further, as shown in FIG. 1, the right subblock B22 is provided with a wafer transfer mechanism 42 on the back side of the delivery tower 41 (on the positive side in the Y direction in the drawing). The wafer transfer mechanism 42 has a transfer arm 42a configured to be able to move forward and backward and move up and down, and can transfer the wafer W between the transfer modules of the transfer tower 41.

Subsequently, the first to sixth layer blocks P1 to P6 of the right subblock B22 will be described.
In the present embodiment, the fourth to sixth layer blocks P4 to P6 are provided with a processing unit such as a liquid treatment unit, but the first to third layer blocks P1 to P3 are not provided with a processing unit. Hereinafter, a specific description will be given. In FIG. 1, for the right subblock B22, the configuration of the fourth layer block P4 among the first to sixth layer blocks P1 to P6 is shown.

The configuration of the type of the liquid treatment unit provided on the front side is different between the fourth layer block P4 of the right subblock B22 and the third layer block L3 of the left subblock B21. In the fourth layer block P4 of the right subblock B22, a resist film forming unit COT1 that forms a resist film on the wafer W on which the antireflection film is formed is provided as a liquid processing unit instead of the developing unit DEV1. .. A resist liquid is supplied as a treatment liquid from the nozzle 33 of the resist film forming unit COT1. In the drawings and the like, the transport area provided in the fourth layer block P4 is Q4, and the vertical units are U41 to U44. The wafer transfer mechanism provided in the transfer area Q4 is referred to as Q41, and the transfer arm included in the wafer transfer mechanism Q41 is referred to as Q41a. The transfer arm Q41a can deliver the wafer W between the delivery tower 41 and the resist film forming unit COT1, between the resist film forming unit COT1 and the vertical units U11-14, and the like. The transport arm Q41a can also access the delivery tower 51, which will be described later, of the interface block B3.

The fifth and sixth layer blocks P5 and P6 are configured in the same manner as the fourth layer block P4. In the drawings and the like, the transport regions provided in the 5th and 6th layer blocks P5 and P6 are designated as Q5 and Q6, the resist film forming units are designated as COT2 and COT3, and the vertical units are designated as U51 to U54 and U61 to U64. And. Further, the wafer transfer mechanisms provided in the transfer areas Q5 and Q6 are referred to as Q51 and Q61, and the transfer arms of the wafer transfer mechanisms Q51 and Q61 are referred to as Q51a and Q61a.

Similar to the 4th to 6th layer blocks P4 to P6, the first to third layer blocks P1 to P3 are provided with transfer regions Q1 to Q3, and the transfer areas Q1 to Q3 are provided with transfer arms Q41a, Q51a, Wafer transfer mechanisms Q41, Q51, and Q61 having Q61a are provided. However, in the first to third layer blocks P1 to P3, unlike the fourth to sixth layer blocks P4 to P6, the transfer arms Q41a, Q51a, and Q61a are the delivery tower 41 and the delivery tower 51 described later of the interface block B3. It is used when delivering the wafer W between the wafers. Further, in the first to third layer blocks P1 to P3, unlike the fourth to sixth layer blocks P4 to P6, the processing units are not provided in the regions on the front side and the back side of the transport regions Q1 to Q3. In the first to third layer blocks P1 to P3, for example, the area in front of the transport areas Q1 to Q3 houses a treatment liquid bottle for storing various treatment liquids such as a resist liquid, a pump for pumping various treatment liquids, and the like. Used as a chemical chamber CHE.

Further, in the processing block B2, as shown in FIGS. 1 and 3, ducts 23 and 43 are provided in the left subblock B21 and the right subblock B22, respectively. Specifically, in the left sub-block B21, a duct 23 is provided between the liquid treatment units of the antireflection film forming units BCT1 and BCT2 and the developing units DEV1 to DEV4 and the carrier block B1. In the right subblock B22, a duct 43 is provided between the resist film forming units COT1 to COT3 and the interface block B3 in a plan view.

The ducts 23 and 43 supply clean air from the air conditioner S as an air supply source to each liquid treatment unit. A filter unit F is provided on each of the antireflection film forming units BCT1 and BCT2, the developing units DEV1 to DEV4, and the resist film forming units COT1 to COT3, respectively. The filter unit F has, for example, a ULPA (Ultra Low Penetration Air) filter and a guide plate. The filter unit F purifies the air blown from the air conditioner S by the fan with the ULPA filter, and supplies the air to the cup 32 by the guide plate, for example, in a downward flow (downflow). The downstream ends of the filter unit F of each liquid treatment unit are connected to the ducts 23 and 43, and one ends of the flexible pipes 24 and 44 as connecting pipes are connected to the upstream ends of the ducts 23 and 43, respectively. The above-mentioned air conditioner S is connected to the other ends of the flexible pipes 24 and 44.

As shown in FIG. 1, the interface block B3 is provided with a delivery tower 51 at a position adjacent to a central region in the depth direction of the left sub-block B21.
In the delivery tower 51, a plurality of delivery modules are stacked in the vertical direction. The delivery tower 51 is provided with delivery modules TRS31 to TRS33 at height positions corresponding to the respective layer blocks of the first to third layer blocks P1 to P3 of the right subblock B22.

Further, the interface block B3 is provided with a wafer transfer mechanism 52 on the exposure device E side (positive side in the X direction in the figure). The wafer transfer mechanism 52 has a transfer arm 52a configured to be movable back and forth, move up and down, rotate around a vertical axis, and move in the depth direction (Y direction in the figure). The transfer arm 52a can transfer the wafer W between the delivery tower 51 and the exposure apparatus E.

The coating and developing apparatus 1 configured as described above has a control unit 100. The control unit 100 is, for example, a computer equipped with a CPU, a memory, or the like, and has a program storage unit (not shown). In this program storage unit, a program for controlling the operation of the drive system such as the above-mentioned various processing units and the wafer transfer mechanism to perform various processing on the wafer W is stored. The program may be recorded on a computer-readable storage medium and may be installed on the control unit 100 from the storage medium. Part or all of the program may be realized by dedicated hardware (circuit board).

Next, the coating and developing process performed by using the coating and developing apparatus 1 configured as described above will be described.

First, the carrier C containing the plurality of wafers W is carried into the carrier block B1 of the coating and developing apparatus 1. Then, each wafer W in the carrier C is sequentially conveyed to the delivery module TRS10 of the delivery tower 21 by the wafer transfer mechanism 13, and is carried into the left sub-block B21 of the processing block B2.

Subsequently, the wafer W is conveyed by the wafer transfer mechanism 22 to, for example, the delivery module TRS 11 of the delivery tower 21.

Next, the wafer W is transported to, for example, a vertical unit T11 (hydrophobicization treatment unit) by the wafer transfer mechanism M11 and hydrophobized. After that, the wafer W is conveyed by the wafer transfer mechanism M11 in the order of, for example, the delivery module CPL11 → the antireflection film forming unit BCT1 → the vertical unit T13 (heat treatment unit), and the antireflection film is formed.

Subsequently, the wafer W is conveyed to the delivery module TRS21 of the delivery tower 41 by the wafer transfer mechanism M11, and is carried into the right subblock B22 of the processing block B2. After that, the wafer W is transported by the wafer transfer mechanism 42 to, for example, the delivery module CPL24, and is carried into the fourth layer block P4. Then, the wafer W is conveyed in the order of the resist film forming unit COT1 → the vertical unit U41 (heat treatment unit) → the delivery module TRS24 by the wafer conveying mechanism Q41, and the resist film is formed on the antireflection film.

Subsequently, the wafer W is transferred by the wafer transfer mechanism 42 to, for example, the delivery module TRS20 corresponding to the first layer block P1. Then, the wafer W is transferred to the delivery module TRS31 of the delivery tower 51 of the interface block B3 by the wafer transfer mechanism Q11.

Next, the wafer W is conveyed to the exposure device E by the wafer transfer mechanism 52 and exposed. After the exposure, the wafer W is transferred by the wafer transfer mechanism 52 to, for example, the transfer module TRS33 of the transfer tower 51. Subsequently, the wafer W is carried back into the processing block B2 by the wafer transfer mechanism Q31, and is transferred to the delivery module TRS20 corresponding to the third layer block P3 of the delivery tower 41.

After that, the wafer W is transferred by the wafer transfer mechanism 42 to, for example, the transfer module TRS24 of the transfer tower 41. Subsequently, the wafer W is carried into the left subblock B21 by the wafer transfer mechanism M41, is conveyed to, for example, the vertical unit T41 (heat treatment unit), and is subjected to PEB processing. After that, the wafer W is conveyed in the order of the delivery module CPL24 → the developing unit DEV1 by the wafer transfer mechanism M41. As a result, the wafer W is subjected to development processing, and a resist pattern is formed on the wafer W.

After the development process, the wafer W is transferred from the vertical unit T43 (heat treatment unit) to the delivery module CPL14 by the wafer transfer mechanism M41. After that, the wafer W is transferred to the delivery module TRS10 by the wafer transfer mechanism 22. Then, the wafer W is carried out from the processing block B2 by the wafer transfer mechanism 13 and returned to the carrier C.

Subsequently, the ducts 23 and 43 and the flexible pipes 24 and 44 will be described in more detail. In the following, the flow rate of air supplied into each of the antireflection film forming units BCT1 and BCT2, the developing units DEV1 to DEV4, and the resist film forming units COT1 to COT3 through the ducts 23 and 43 is different between the units. It shall be equal to each other.

The ducts 23 and 43 are provided so as to extend in the vertical direction as shown in FIG. Six liquid treatment units, the antireflection film forming units BCT1 and BCT2, and the developing units DEV1 to DEV4, are connected to the duct 23 from the lower end to the upper end. On the other hand, the duct 43 is connected to three liquid treatment units, the resist film forming units COT1 to COT3, from the central portion to the upper end portion in the vertical direction. That is, the number of liquid treatment units connected to the ducts 23 and 43 is different from each other.

Further, the lengths of the ducts 23 and 43 are equal to each other. On the other hand, the cross-sectional area inside the ducts 23 and 43 is a value corresponding to the total flow rate of air to the liquid treatment unit connected to the duct. In the present embodiment, since the flow rates of air supplied to the liquid treatment units are equal to each other, the cross-sectional areas inside the ducts 23 and 43 correspond to the number of liquid treatment units connected to the ducts. It is a value. Since the number of connected liquid treatment units is 6 ducts 23 and 3 ducts 43, the cross-sectional area inside the duct 43 is as small as 1/2 of the duct 23.
In this way, by setting the cross-sectional area inside the ducts 23 and 43 to a value corresponding to the total flow rate of air to the liquid treatment unit connected to the duct, the flow velocity of the duct 43 is increased to the duct 23 having a high flow velocity. Is matched. As a result, the ducts 23 and 43 have the same flow velocity of air in the duct.

Further, the lengths of the flexible tubes 24 and 44 are equal to each other. On the other hand, the cross-sectional area inside the flexible pipes 24 and 44 is a value corresponding to the total flow rate of air to the liquid treatment unit connected to the duct to which the flexible pipes are connected. In the present embodiment, since the flow rates of air supplied to the liquid treatment units are equal to each other, the cross-sectional area inside the flexible pipes 24 and 44 is the liquid treatment connected to the duct to which the flexible pipes are connected. The value corresponds to the number of units. Since the number of connected liquid treatment units is 6 ducts 23 and 3 ducts 43, the cross-sectional area inside the flexible pipe 44 is half that of the flexible pipe 24.
In this way, by setting the cross-sectional area inside the flexible pipes 24 and 44 to a value corresponding to the total flow rate of air to the liquid treatment unit connected to the duct to which the flexible pipes are connected, flexible with a high flow velocity. The flow velocity of the flexible tube 44 is adjusted to the flow velocity of the tube 24. As a result, the flexible pipes 24 and 44 have the same air flow velocity in the flexible pipe. That is, the ducts 23 and 43 have the same flow velocity of air supplied to the duct via the flexible pipe.

In the above description, both the flow velocity of the air in the ducts 23 and 43 and the flow velocity of the air supplied to the ducts 23 and 43 via the flexible pipes 24 and 44 were equal between the ducts, but one of them. May be equal between ducts.

As described above, in the present embodiment, the coating developer 1 has two ducts 23 and 43 for supplying air to the liquid treatment unit, and for each duct, a flexible pipe connecting the duct and the air conditioner S. It has 24 and 44, and the two ducts 23 and 43 are connected to different numbers of liquid processing units. Then, in the present embodiment, at least one of the flow velocity of the air in the ducts 23 and 43 and the flow velocity of the air supplied to the ducts 23 and 43 via the flexible pipes 24 and 44 is equal between the ducts.
When the flow velocities of the air in the ducts 23 and 43 are equal between the ducts, the time for the air to stay in the duct 43 with a small number of connections of the liquid treatment unit is longer than the time for staying in the duct 23 with a large number of connections. Never become. Therefore, in the duct 43 in which the number of connected liquid treatment units is small, the liquid treatment unit connected to the upstream side of the duct and the liquid treatment unit connected to the downstream side of the duct (for example, the resist film forming unit COT1 and the same unit COT3) are used. It is possible to prevent the temperature difference and humidity difference of the supplied air from becoming large. Further, when the flow velocities of the air in the ducts 23 and 43 are equal between the ducts, the liquid treatment unit of the nth (n is an integer of 4 to 6) layer block connected to the duct 23 and the liquid treatment unit connected to the duct 43. It is possible to reduce the temperature difference and humidity difference of the supplied air with the liquid treatment unit of the n-layer block.
Further, when the flow velocities of the air supplied to the ducts 23 and 43 via the flexible pipes 24 and 44 are equal between the ducts, in other words, when the flow velocities of the air in the flexible pipes 24 and 44 are equal in the flexible pipes, It is as follows. That is, in this case, the time for air to stay in the flexible pipe 44 connecting the ducts 43 having a small number of connections of the liquid treatment unit is longer than the time staying in the flexible pipe 24 connecting the ducts 23 having a large number of connections. Never become. Therefore, the temperature and humidity of the air supplied to the duct 43 from the flexible pipe 44 connecting the ducts 43 having a small number of connections and the flexible pipe 24 connecting the ducts 23 having a small number of connections are supplied to the duct 23. There is no big difference between the temperature and humidity of the air. Therefore, it is possible to reduce the temperature difference and the humidity difference of the supplied air between the liquid treatment unit connected to the duct 23 and the liquid treatment unit connected to the duct 43.
Therefore, according to the present embodiment, it is possible to reduce the difference in temperature and humidity between the units of the clean air supplied to each liquid treatment unit.

When the processing block is composed of a plurality of subblocks from the viewpoint of transportation or the like, subblocks of substantially the same size may be used for reasons such as design efficiency. In this case, the space inside the subblocks is a liquid. It may not be filled with the processing unit or heat treatment unit alone. For example, in such a case, the number of liquid treatment units connected may differ between the ducts as in the present embodiment.

Subsequently, another configuration for reducing the difference in temperature and humidity between the liquid processing units in the coating and developing apparatus 1 will be described.

5 and 6 are a perspective view and a top view showing the inside of the processing block B2 partially and schematically, respectively.
As shown in FIG. 5, the duct 23 is covered with a heat insulating member 23a that insulates the air flowing through the duct 23 from the heat outside the duct 23. The heat insulating member 23a is formed of, for example, a resin material having a low thermal conductivity. In the example of the figure, the heat insulating member 23a is formed on the front side (negative side in the Y direction in the figure), the left side (negative side in the X direction in the figure), and the back side (positive side in the Y direction in the figure) of the duct 23 formed in a rectangular parallelepiped shape. ) Covers the entire vertical direction.
Further, as shown in FIG. 6, the heat insulating member 23a is attached to the duct 23 so that an air layer 23b is formed between the heat insulating member 23a and the outer peripheral surface of the duct 23.

By providing the heat insulating member 23a as described above, it is possible to prevent the air flowing in the duct 23 from rising due to the influence of the outside of the duct. When the temperature of the air flowing in the duct 23 is affected by the outside and the temperature rises, the temperature difference and humidity difference of the air supplied between the liquid treatment unit connected to the upstream side of the duct and the liquid treatment unit connected to the downstream side of the duct Will grow. On the other hand, by providing the heat insulating member 23a and preventing the air flowing in the duct 23 from rising due to the influence of the outside of the duct, it is possible to prevent the temperature difference and the humidity difference from becoming large.
Further, by attaching the heat insulating member 23a so that the air layer 23b is formed, the influence of the outside of the duct on the air inside the duct can be further reduced. Therefore, the temperature difference and the humidity difference of the supplied air between the liquid treatment unit on the upstream side of the duct and the liquid treatment unit on the downstream side of the duct can be further reduced.

Although not shown, the duct 43 is also provided with a heat insulating member.

7 and 8 are a front view and a perspective view showing the upper part of the processing block B2 partially and schematically, respectively.
As shown in FIG. 7, the processing block B2 has a housing 10 for accommodating various processing units and ducts 23 and 43. The processing block B2 is provided with a plurality of electrical components 200 in which electrical components for the liquid treatment unit and the like are unitized above the housing 10.

As shown in FIG. 8, a pair for moving the electrical unit 200 in the depth direction (Y direction in the drawing) and attaching / detaching the electrical unit 200 to / from the ceiling surface 10a on the ceiling surface 10a of the housing 10. Guide rail 210 is provided. The guide rail 210 is formed with a guide groove 211 extending in the depth direction.

The electrical unit 200 has a unit main body 201, and electrical components are housed inside the unit main body 201. Electrical components include, for example, control equipment, amplifiers, power supplies, drivers, contactors, breakers and the like.
A protrusion 202 is provided on the lower side of the unit body 201. The protrusion member 202 has a protrusion 203 extending in the depth direction. The electrical unit 200 is configured to be movable in the depth direction along the guide rail 210 by the guide groove 211 of the guide rail 210 and the protrusion 203 of the protrusion member 202.

Then, in this example, the protrusion member 202 of the electrical unit 200 is attached to the lower surface of the unit main body 201 via the support member 204. The support member 204 has legs 205 formed so as to extend in the vertical direction. The electrical unit 200 is raised by the support member 204 having the legs 205, and is provided at a position above the housing 10 and away from the ceiling surface 10a of the housing 10. As a result, the air supplied to the liquid processing unit near the ceiling surface 10a of the housing 10 in the processing block B2 is not affected by the heat from the electrical unit 200. Therefore, due to the heat from the electrical unit 200, there is no temperature difference or humidity difference in the supplied air between the liquid treatment unit near the ceiling surface 10a and the other liquid treatment units.
When raising the electrical unit 200 in this way, it is preferable to increase the mounting density of the electrical components in the unit main body 201 to reduce the height of the unit main body 201 by the amount of the raised amount.

9 and 10, respectively, are a perspective view and a bottom view showing the lower surfaces of the processing block B2 and the carrier block B1 partially and schematically, respectively.
As shown in FIGS. 9 and 10, a flexible pipe 24 connected to the duct 23 extends from the lower surface of the housing 10 of the processing block B2 and is exposed. A partition plate 24a is provided around the flexible tube 24 in view of the lower surface. Specific examples of the installation positions of the partition plate 24a are as follows.

An exhaust hole 301 is provided on the lower surface of the carrier block B1. The exhaust hole 301 is for discharging the air exhausted by a fan (not shown) for adjusting the pressure inside the carrier block B1 to the outside of the carrier block B1. A partition plate 24a is provided between the exhaust hole 301 and the flexible pipe 24 in the bottom view.
The partition plate 24a may also be provided on the back side of the flexible pipe 24 (on the positive side in the Y direction in the figure). Further, the partition plate 24a may be provided on the front side (negative side in the Y direction in the figure) of the flexible pipe 24.

By providing the partition plate 24a as described above, the air in the flexible pipe 24 is not affected by the ambient heat, particularly the heat of the exhaust from the exhaust hole 301 on the lower surface of the carrier block B1. Therefore, due to the heat from the outside of the flexible pipe 24, the liquid treatment unit connected to the duct 23 connected by the flexible pipe 24 and the liquid treatment unit connected to the duct 43 connected by the flexible pipe 44. Therefore, there is no temperature difference or humidity difference in the supplied air.

FIG. 11 is a perspective view schematically showing the lower part of the processing block B2.
As shown in the figure, the processing block B2 has a cover 400 that covers the gap between the lower surface of the housing 10 and the floor surface FL on which the coating developing apparatus 1 is installed from the front. The cover 400 is formed with a large number of through holes 401 that penetrate in the depth direction.
By providing such a cover 400, it is possible to prevent heat from being trapped under the housing 10. Therefore, the liquid treatment unit near the lower surface of the housing 10 is not affected by the heat trapped under the housing 10. Therefore, due to the heat trapped under the housing 10, there is no difference in temperature or humidity between the processing unit near the lower surface of the housing 10 and the other processing units.

In the coating and developing apparatus 1, a cabinet for storing electrical components may be provided on the side of the processing block B2.
FIG. 12 is a perspective view showing an example of the cabinet.
The cabinet 500 in the figure is provided with a box 501 for storing electrical components. The box 501 is provided, for example, on the right side of the right subblock B22 of the processing block B2 on the right side of the fourth layer block P4 in the X direction).

The box body 501 has a top plate 510 and a frame body 520 to which the top plate is attached.
The top plate 510 is formed with a through hole 511 that penetrates in the vertical direction. As a result, the heat of the electrical components in the box 501 is not trapped in the box 501. Therefore, the air in the liquid treatment unit and the duct 43 in the vicinity of the box 501 is not affected by the heat trapped in the box 501. Therefore, due to the heat trapped in the box 501, there is no temperature difference or humidity difference between the processing unit close to the box 501 and the other processing units.

Further, the housing 10 of the processing block B2 is formed with a through hole 10b penetrating in the width direction above the box body 501 on the side surface of the cabinet 500 side. By forming the through hole 10b, the heat transferred from the box body 501 to the processing block B2 can be released through the through hole 10b.

Further, the cabinet 500 has a covering plate 502 that covers the through hole 511 of the top plate 510 from above at a position facing the top plate 510 of the box body 501. By providing the cover plate 502, it is possible to prevent the electrical components in the box 501 from breaking down when water is discharged from a sprinkler (not shown). The distance between the cover plate 502 and the top plate 510 is, for example, 150 mm.

FIG. 13 is a partially enlarged view of FIG.
As shown in the figure, the top plate 510 of the box body 501 is provided with leg portions 512 having an L-shaped side view. By attaching the top plate 510 to the upper surface of the frame body 520 via the leg portions 512, a gap 521 can be formed between the top plate 510 and the frame body 520. The heat of the electrical components in the box 501 can be released through the gap 521.

In the above example, the processing block B2 is composed of two subblocks, but may be composed of three or more subblocks.
Further, the processing block B2 may be composed of one block. In this case, the delivery tower 41 and the wafer transfer mechanism 42 are omitted. Further, in this case, the wafer transfer mechanisms Q11, Q21, and Q31 are omitted, and the wafer transfer mechanisms M11, M21, and M31 are configured to be accessible to the delivery tower 51. Further, the wafer transfer mechanisms Q41, Q51, and Q61 are also omitted, the wafer transfer mechanism M41 is configured to be accessible to COT1 and the vertical units U41 to U44, and the wafer transfer mechanisms M51 and M61 are similarly configured.

Further, in the above example, the number of connections is a plurality even in the duct having a small number of connections of the liquid treatment unit, but the number of connections may be one for the duct having a small number of connections. In the above example, the ratio of the number of connections between the duct having a small number of connections and the duct having a large number of connections was 1: 2, but it may be larger or smaller than this. That is, the number of connections may differ between the ducts.
Further, in the above example, the flow velocities of the air in the ducts are made "equal" between the ducts, and the flow velocities of the air supplied to the ducts through the connecting pipes are made "equal" between the ducts. However, "equal" here does not require an exact match of the measured values of the flow velocities. As long as the duct or connecting pipe has the structure disclosed in the above example, the effect of reducing the difference in temperature and humidity of the clean air supplied to each processing unit between the units can be exhibited, as a result of comparison. Even the measured values of the flow velocities with some differences are included in the "equal" range.

The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

The following configurations also belong to the technical scope of the present disclosure.
(1) A substrate processing apparatus having a plurality of processing units for processing a substrate.
It has a plurality of ducts for supplying air to the processing unit, and has a plurality of ducts.
Each duct has a connecting pipe that connects the duct and the air supply source.
The plurality of ducts are connected to different numbers of the processing units.
A substrate processing apparatus in which at least one of the flow velocity of air in the duct and the flow velocity of air supplied to the duct through the connecting pipe is equal between the ducts.
According to the above (1), in a substrate processing apparatus having a plurality of processing units, it is possible to reduce the difference in temperature and humidity between units of clean air supplied to each processing unit.

(2) Of the following conditions (A) and (B)
(A) Each of the ducts has a cross-sectional area corresponding to the total flow rate of air to the processing unit connected to the duct.
(B) Each of the connecting pipes has a cross-sectional area corresponding to the total flow rate of air to the processing unit connected to the duct to which the connecting pipe is connected.
The substrate processing apparatus according to (1) above, which satisfies at least one of them.

(3) The substrate processing apparatus according to (1) or (2) above, wherein the duct is covered with a heat insulating member that insulates air flowing through the duct from heat outside the duct.

(4) The substrate processing apparatus according to (3) above, wherein an air layer is formed between the duct and the heat insulating member.

(5) The substrate processing apparatus according to any one of (1) to (4) above, which has a housing for accommodating the processing unit.

(6) Have electrical components
The substrate processing apparatus according to (5) above, wherein the electrical component is provided above the housing at a position separated from the housing.

(7) The housing houses the duct, and the connecting pipe extends from the lower surface of the housing.
The substrate processing apparatus according to (5) or (6) above, wherein a partition plate is provided around the connection pipe in a bottom view.

(8) It has a carrier block in which a carrier accommodating a plurality of the substrates is carried in and out.
The carrier block is adjacent to the housing and
The substrate processing apparatus according to (7), wherein the partition plate is provided between the exhaust hole formed on the lower surface of the carrier block and the connection pipe in the bottom view.

(9) It has a cover that covers a gap between the lower surface of the housing and the floor on which the substrate processing apparatus is installed.
The substrate processing apparatus according to any one of (5) to (8) above, wherein the cover is formed with through holes.

(10) The substrate processing apparatus according to any one of (5) to (9) above, which has a cabinet provided with a box body for storing electrical components on the side of the housing.

(11) The substrate processing apparatus according to (10) above, wherein a through hole is formed in the top plate of the box body.

(12) The substrate processing apparatus according to (11) above, wherein the cabinet has a covering plate that covers a through hole of the top plate from above at a position facing the top plate of the box body.

(13) The box body has a top plate and a frame body to which the top plate is attached.
The substrate processing apparatus according to any one of (10) to (12), wherein a gap is provided between the frame and the top plate.

(14) The substrate processing apparatus according to any one of (10) to (13) above, wherein a through hole is formed above the box body on the side surface of the housing.

(15) An air supply method for supplying clean air to each of the processing units in a substrate processing apparatus having a plurality of processing units for processing the substrate.
The substrate processing apparatus is
It has a plurality of ducts for supplying air to the processing unit, and has a plurality of ducts.
Each duct has a connecting pipe that connects the duct and the air supply source.
The plurality of ducts are connected to different numbers of the processing units.
At least one of the flow velocity of air in the duct and the flow velocity of air supplied to the duct through the connecting pipe is equal between the ducts.
The air supply method is
An air supply method for supplying clean air from the air supply source to each of the processing units via the connection pipe and the duct.

1 Coating and developing equipment BCT1, BCT2 Antireflection film forming unit COT1 to COT3 Resist film forming unit DEV1 to DEV4 Developing unit 23, 43 Duct 24, 44 Flexible tube W wafer

Claims (15)

A substrate processing apparatus having a plurality of processing units for processing a substrate.
It has a plurality of ducts for supplying air to the processing unit, and has a plurality of ducts.
Each duct has a connecting pipe that connects the duct and the air supply source.
The plurality of ducts are connected to different numbers of the processing units.
A substrate processing apparatus in which at least one of the flow velocity of air in the duct and the flow velocity of air supplied to the duct through the connecting pipe is equal between the ducts. Of the following conditions (A) and (B)
(A) Each of the ducts has a cross-sectional area corresponding to the total flow rate of air to the processing unit connected to the duct.
(B) Each of the connecting pipes has a cross-sectional area corresponding to the total flow rate of air to the processing unit connected to the duct to which the connecting pipe is connected.
The substrate processing apparatus according to claim 1, wherein at least one of them is satisfied. The substrate processing apparatus according to claim 1 or 2, wherein the duct is covered with a heat insulating member that insulates air flowing through the duct from heat outside the duct. The substrate processing apparatus according to claim 3, wherein an air layer is formed between the duct and the heat insulating member. The substrate processing apparatus according to any one of claims 1 to 4, which has a housing for accommodating the processing unit. Has electrical components,
The substrate processing apparatus according to claim 5, wherein the electrical component is provided above the housing at a position separated from the housing. The housing houses the duct, and the connecting pipe extends from the lower surface of the housing.
The substrate processing apparatus according to claim 5 or 6, wherein a partition plate is provided around the connection pipe in a bottom view. It has a carrier block in which a carrier accommodating a plurality of the substrates is carried in and out.
The carrier block is adjacent to the housing and
The substrate processing apparatus according to claim 7, wherein the partition plate is provided between the exhaust hole formed on the lower surface of the carrier block and the connection pipe in the bottom view. It has a cover that covers the gap between the lower surface of the housing and the floor on which the substrate processing apparatus is installed.
The substrate processing apparatus according to any one of claims 5 to 8, wherein the cover is formed with a through hole. The substrate processing apparatus according to any one of claims 5 to 9, further comprising a cabinet provided with a box body for accommodating electrical components on the side of the housing. The substrate processing apparatus according to claim 10, wherein a through hole is formed in the top plate of the box body. The substrate processing apparatus according to claim 11, wherein the cabinet has a covering plate that covers a through hole of the top plate from above at a position facing the top plate of the box body. The box body has a top plate and a frame body to which the top plate is attached.
The substrate processing apparatus according to any one of claims 10 to 12, wherein a gap is provided between the frame body and the top plate. The substrate processing apparatus according to any one of claims 10 to 13, wherein a through hole is formed above the box body on the side surface of the housing. A method of supplying clean air to each of the processing units in a substrate processing apparatus having a plurality of processing units for processing the substrate.
The substrate processing apparatus is
It has a plurality of ducts for supplying air to the processing unit, and has a plurality of ducts.
Each duct has a connecting pipe that connects the duct and the air supply source.
The plurality of ducts are connected to different numbers of the processing units.
At least one of the flow velocity of air in the duct and the flow velocity of air supplied to the duct through the connecting pipe is equal between the ducts.
The air supply method is
An air supply method for supplying clean air from the air supply source to each of the processing units via the connection pipe and the duct.

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