CN112469850A - 单晶硅锭生产期间的样品棒生长及电阻率测量 - Google Patents

单晶硅锭生产期间的样品棒生长及电阻率测量 Download PDF

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Publication number
CN112469850A
CN112469850A CN201980043704.8A CN201980043704A CN112469850A CN 112469850 A CN112469850 A CN 112469850A CN 201980043704 A CN201980043704 A CN 201980043704A CN 112469850 A CN112469850 A CN 112469850A
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CN
China
Prior art keywords
less
sample rod
resistivity
rod
sample
Prior art date
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Pending
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CN201980043704.8A
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English (en)
Chinese (zh)
Inventor
卡瑞喜玛·玛莉·哈德森
J·柳
R·J·菲利普斯
R·斯坦德利
李衡敏
李荣中
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of CN112469850A publication Critical patent/CN112469850A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201980043704.8A 2018-06-27 2019-06-25 单晶硅锭生产期间的样品棒生长及电阻率测量 Pending CN112469850A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/020,698 US10793969B2 (en) 2018-06-27 2018-06-27 Sample rod growth and resistivity measurement during single crystal silicon ingot production
US16/020,698 2018-06-27
PCT/US2019/038923 WO2020005901A1 (en) 2018-06-27 2019-06-25 Sample rod growth and resistivity measurement during single crystal silicon ingot production

Publications (1)

Publication Number Publication Date
CN112469850A true CN112469850A (zh) 2021-03-09

Family

ID=67263097

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980043704.8A Pending CN112469850A (zh) 2018-06-27 2019-06-25 单晶硅锭生产期间的样品棒生长及电阻率测量

Country Status (8)

Country Link
US (1) US10793969B2 (enExample)
EP (2) EP4317546A3 (enExample)
JP (1) JP7467362B2 (enExample)
KR (2) KR20240005130A (enExample)
CN (1) CN112469850A (enExample)
SG (1) SG11202012909QA (enExample)
TW (2) TWI791859B (enExample)
WO (1) WO2020005901A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10499357B1 (en) 2018-08-09 2019-12-03 Nec Corporation Method and system for transmission of SUSI in the NAS procedure
WO2020131458A1 (en) * 2018-12-21 2020-06-25 Globalwafers Co., Ltd. Sample rod center slab resistivity measurement during single crystal silicon ingot production
US11739437B2 (en) 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
US12351938B2 (en) 2022-02-10 2025-07-08 Globalwafers Co., Ltd. Methods for producing a product ingot having low oxygen content

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449883A (en) * 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
CN102181919A (zh) * 2011-04-13 2011-09-14 天津市环欧半导体材料技术有限公司 一种控制直拉硅单晶头部电阻率的方法
CN103173867A (zh) * 2013-04-16 2013-06-26 江西豪安能源科技有限公司 一种消除太阳能单晶头部热施主导致电阻失真的方法

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JPS6395629A (ja) 1986-10-13 1988-04-26 Hitachi Ltd 半導体単結晶インゴツトの加工指示装置
JP2869300B2 (ja) * 1992-08-07 1999-03-10 三菱マテリアル株式会社 半導体ウェーハの熱処理装置
JP3341378B2 (ja) * 1993-08-25 2002-11-05 富士通株式会社 シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法
JP4370499B2 (ja) 2002-12-27 2009-11-25 信越半導体株式会社 文字読み取り方法及び装置並びに結晶検査方法
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
CN101228301A (zh) 2005-05-19 2008-07-23 Memc电子材料有限公司 高电阻率硅结构和用于制备该结构的方法
JP5767461B2 (ja) 2010-12-14 2015-08-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法
JP5817542B2 (ja) * 2012-01-12 2015-11-18 信越半導体株式会社 シリコン基板の製造方法
JP6168011B2 (ja) * 2014-08-19 2017-07-26 信越半導体株式会社 単結晶育成装置及びその装置を用いた単結晶育成方法
FR3045831B1 (fr) * 2015-12-21 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'etalonnage d'un four de recuit utilise pour former des donneurs thermiques
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449883A (en) * 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
CN102181919A (zh) * 2011-04-13 2011-09-14 天津市环欧半导体材料技术有限公司 一种控制直拉硅单晶头部电阻率的方法
CN103173867A (zh) * 2013-04-16 2013-06-26 江西豪安能源科技有限公司 一种消除太阳能单晶头部热施主导致电阻失真的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ASTM COMMITTEE: "《ASTM INTERNATIONAL》", 28 February 2003 *

Also Published As

Publication number Publication date
US10793969B2 (en) 2020-10-06
EP3814555B1 (en) 2023-12-27
EP4317546A3 (en) 2024-03-20
TWI800474B (zh) 2023-04-21
WO2020005901A1 (en) 2020-01-02
TW202001011A (zh) 2020-01-01
KR20240005130A (ko) 2024-01-11
KR20210044190A (ko) 2021-04-22
EP4317546A2 (en) 2024-02-07
US20200002836A1 (en) 2020-01-02
TW202315989A (zh) 2023-04-16
TWI791859B (zh) 2023-02-11
JP7467362B2 (ja) 2024-04-15
JP2021529147A (ja) 2021-10-28
EP3814555A1 (en) 2021-05-05
SG11202012909QA (en) 2021-01-28

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