CN112436816A - 温度补偿型声表面波器件及其制造方法 - Google Patents
温度补偿型声表面波器件及其制造方法 Download PDFInfo
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- CN112436816A CN112436816A CN202011411032.2A CN202011411032A CN112436816A CN 112436816 A CN112436816 A CN 112436816A CN 202011411032 A CN202011411032 A CN 202011411032A CN 112436816 A CN112436816 A CN 112436816A
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- acoustic wave
- surface acoustic
- wave device
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000003989 dielectric material Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (11)
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113726302A (zh) * | 2021-07-28 | 2021-11-30 | 厦门市三安集成电路有限公司 | 一种声表面波滤波器的叉指换能器的制作方法 |
CN115242206A (zh) * | 2022-09-22 | 2022-10-25 | 杭州左蓝微电子技术有限公司 | 叉指换能器指条成型工艺以及声表滤波器 |
CN115940862A (zh) * | 2023-02-13 | 2023-04-07 | 深圳新声半导体有限公司 | 用于制作声表面波滤波器的方法、声表面波滤波器 |
CN116169979A (zh) * | 2023-03-08 | 2023-05-26 | 北京中科飞鸿科技股份有限公司 | 超细线宽叉指电极及其制备方法、叉指换能器 |
CN118399914A (zh) * | 2024-06-26 | 2024-07-26 | 深圳飞骧科技股份有限公司 | 滤波器及其制备方法 |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252685A (ja) * | 1993-02-26 | 1994-09-09 | Kinseki Ltd | 二重モード弾性表面波フイルタ |
JPH07326942A (ja) * | 1994-05-31 | 1995-12-12 | Kyocera Corp | 弾性表面波装置 |
EP0744830A1 (en) * | 1994-10-20 | 1996-11-27 | Japan Energy Corporation | Surface acoustic wave device and production method thereof |
JP2005039867A (ja) * | 2001-10-12 | 2005-02-10 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法 |
US20060043823A1 (en) * | 2004-08-27 | 2006-03-02 | Kyocera Corporation | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
CN101356727A (zh) * | 2006-01-11 | 2009-01-28 | 株式会社村田制作所 | 声表面波装置的制造方法及声表面波装置 |
US20090096320A1 (en) * | 2006-07-05 | 2009-04-16 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
JP2009194895A (ja) * | 2008-01-17 | 2009-08-27 | Murata Mfg Co Ltd | 弾性表面波装置 |
CN101904095A (zh) * | 2007-12-20 | 2010-12-01 | 株式会社村田制作所 | 弹性表面波装置 |
CN101911484A (zh) * | 2008-01-17 | 2010-12-08 | 株式会社村田制作所 | 声表面波装置 |
US20130300253A1 (en) * | 2011-01-19 | 2013-11-14 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
CN103650344A (zh) * | 2011-07-15 | 2014-03-19 | 国际商业机器公司 | 具有平面势垒层的saw滤波器及其制造方法 |
CN107317560A (zh) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | 一种温度补偿表面声波器件及其制备方法 |
CN108768334A (zh) * | 2018-06-01 | 2018-11-06 | 厦门市三安集成电路有限公司 | 一种tc-saw之idt铜工艺制造方法 |
CN108923763A (zh) * | 2018-06-01 | 2018-11-30 | 厦门市三安集成电路有限公司 | 一种高频saw之idt铜工艺制造方法 |
CN110212884A (zh) * | 2019-06-11 | 2019-09-06 | 上海交通大学 | 适用于声表面波器件的填埋式电极结构 |
CN111726101A (zh) * | 2019-03-20 | 2020-09-29 | 深圳市麦捷微电子科技股份有限公司 | 一种tc-saw器件及其制造方法 |
-
2020
- 2020-12-03 CN CN202011411032.2A patent/CN112436816B/zh active Active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252685A (ja) * | 1993-02-26 | 1994-09-09 | Kinseki Ltd | 二重モード弾性表面波フイルタ |
JPH07326942A (ja) * | 1994-05-31 | 1995-12-12 | Kyocera Corp | 弾性表面波装置 |
EP0744830A1 (en) * | 1994-10-20 | 1996-11-27 | Japan Energy Corporation | Surface acoustic wave device and production method thereof |
JP2005039867A (ja) * | 2001-10-12 | 2005-02-10 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法 |
US20060043823A1 (en) * | 2004-08-27 | 2006-03-02 | Kyocera Corporation | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
CN101356727A (zh) * | 2006-01-11 | 2009-01-28 | 株式会社村田制作所 | 声表面波装置的制造方法及声表面波装置 |
US20090096320A1 (en) * | 2006-07-05 | 2009-04-16 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
CN101904095A (zh) * | 2007-12-20 | 2010-12-01 | 株式会社村田制作所 | 弹性表面波装置 |
JP2009194895A (ja) * | 2008-01-17 | 2009-08-27 | Murata Mfg Co Ltd | 弾性表面波装置 |
CN101911484A (zh) * | 2008-01-17 | 2010-12-08 | 株式会社村田制作所 | 声表面波装置 |
US20130300253A1 (en) * | 2011-01-19 | 2013-11-14 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
CN103650344A (zh) * | 2011-07-15 | 2014-03-19 | 国际商业机器公司 | 具有平面势垒层的saw滤波器及其制造方法 |
CN107317560A (zh) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | 一种温度补偿表面声波器件及其制备方法 |
CN108768334A (zh) * | 2018-06-01 | 2018-11-06 | 厦门市三安集成电路有限公司 | 一种tc-saw之idt铜工艺制造方法 |
CN108923763A (zh) * | 2018-06-01 | 2018-11-30 | 厦门市三安集成电路有限公司 | 一种高频saw之idt铜工艺制造方法 |
CN111726101A (zh) * | 2019-03-20 | 2020-09-29 | 深圳市麦捷微电子科技股份有限公司 | 一种tc-saw器件及其制造方法 |
CN110212884A (zh) * | 2019-06-11 | 2019-09-06 | 上海交通大学 | 适用于声表面波器件的填埋式电极结构 |
Non-Patent Citations (2)
Title |
---|
KEN-YA HASHIMOTO等: "Recent Development of Temperature Compensated SAW Devices", 《2011 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM》, pages 79 - 86 * |
汤正杰: "基于AlN压电薄膜的耐高温声表面波传感器的研究与制作", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》, no. 08, pages 020 - 345 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113726302A (zh) * | 2021-07-28 | 2021-11-30 | 厦门市三安集成电路有限公司 | 一种声表面波滤波器的叉指换能器的制作方法 |
CN115242206A (zh) * | 2022-09-22 | 2022-10-25 | 杭州左蓝微电子技术有限公司 | 叉指换能器指条成型工艺以及声表滤波器 |
CN115940862A (zh) * | 2023-02-13 | 2023-04-07 | 深圳新声半导体有限公司 | 用于制作声表面波滤波器的方法、声表面波滤波器 |
CN116169979A (zh) * | 2023-03-08 | 2023-05-26 | 北京中科飞鸿科技股份有限公司 | 超细线宽叉指电极及其制备方法、叉指换能器 |
CN116169979B (zh) * | 2023-03-08 | 2024-05-24 | 北京中科飞鸿科技股份有限公司 | 超细线宽叉指电极及其制备方法、叉指换能器 |
CN118399914A (zh) * | 2024-06-26 | 2024-07-26 | 深圳飞骧科技股份有限公司 | 滤波器及其制备方法 |
CN118399914B (zh) * | 2024-06-26 | 2024-08-23 | 深圳飞骧科技股份有限公司 | 滤波器及其制备方法 |
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