CN108923763B - 一种高频saw之idt铜工艺制造方法 - Google Patents
一种高频saw之idt铜工艺制造方法 Download PDFInfo
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- CN108923763B CN108923763B CN201810558978.8A CN201810558978A CN108923763B CN 108923763 B CN108923763 B CN 108923763B CN 201810558978 A CN201810558978 A CN 201810558978A CN 108923763 B CN108923763 B CN 108923763B
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 10
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
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- 238000010897 surface acoustic wave method Methods 0.000 description 16
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
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CN108923763A CN108923763A (zh) | 2018-11-30 |
CN108923763B true CN108923763B (zh) | 2022-06-14 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110085736A (zh) * | 2019-04-28 | 2019-08-02 | 厦门市三安集成电路有限公司 | 一种薄膜单晶压电材料复合基板的制造方法和应用 |
CN110943709B (zh) * | 2019-10-31 | 2023-03-17 | 厦门市三安集成电路有限公司 | 一种温度补偿声表滤波器的改善结构及其方法 |
CN112436815B (zh) * | 2020-11-19 | 2024-03-15 | 广东广纳芯科技有限公司 | 温度补偿型声表面波器件及其制造方法 |
CN112448687B (zh) * | 2020-11-23 | 2024-05-03 | 广东广纳芯科技有限公司 | 一种tc-saw滤波器制造方法 |
CN112491380B (zh) * | 2020-11-23 | 2023-10-20 | 广东广纳芯科技有限公司 | 一种tc-saw的金属电极制造方法 |
CN112436816B (zh) * | 2020-12-03 | 2024-04-09 | 广东广纳芯科技有限公司 | 温度补偿型声表面波器件及其制造方法 |
CN112653409B (zh) * | 2020-12-17 | 2024-04-12 | 广东广纳芯科技有限公司 | 一种用于制造金属电极的制造方法 |
CN112653417A (zh) * | 2020-12-18 | 2021-04-13 | 广东广纳芯科技有限公司 | 声表面波谐振器及该声表面波谐振器的制造方法 |
CN113067560A (zh) * | 2021-03-09 | 2021-07-02 | 上海萍生微电子科技有限公司 | 一种新型saw滤波器的工艺制造流程 |
CN117318646A (zh) * | 2023-10-12 | 2023-12-29 | 中微龙图电子科技无锡有限责任公司 | 一种具有温度补偿功能的声表面波滤波器的制造方法 |
Citations (6)
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CN103558739A (zh) * | 2013-11-21 | 2014-02-05 | 杭州士兰集成电路有限公司 | 光刻胶去除方法和光刻工艺返工方法 |
CN103558712A (zh) * | 2013-11-21 | 2014-02-05 | 京东方科技集团股份有限公司 | 一种彩膜基板、其制作方法、内嵌式触摸屏及显示装置 |
CN104451545A (zh) * | 2014-11-19 | 2015-03-25 | 中国电子科技集团公司第二十六研究所 | 一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法 |
CN207074991U (zh) * | 2016-09-26 | 2018-03-06 | 株式会社村田制作所 | 弹性波装置、高频前端电路以及通信装置 |
CN107910438A (zh) * | 2017-11-09 | 2018-04-13 | 中国人民解放军国防科技大学 | 一种高频段声表面波器件电极的制备方法 |
CN108039873A (zh) * | 2017-11-30 | 2018-05-15 | 深圳华远微电科技有限公司 | 一种芯片级声表面波滤波器制作方法 |
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2018
- 2018-06-01 CN CN201810558978.8A patent/CN108923763B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103558739A (zh) * | 2013-11-21 | 2014-02-05 | 杭州士兰集成电路有限公司 | 光刻胶去除方法和光刻工艺返工方法 |
CN103558712A (zh) * | 2013-11-21 | 2014-02-05 | 京东方科技集团股份有限公司 | 一种彩膜基板、其制作方法、内嵌式触摸屏及显示装置 |
CN104451545A (zh) * | 2014-11-19 | 2015-03-25 | 中国电子科技集团公司第二十六研究所 | 一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法 |
CN207074991U (zh) * | 2016-09-26 | 2018-03-06 | 株式会社村田制作所 | 弹性波装置、高频前端电路以及通信装置 |
CN107910438A (zh) * | 2017-11-09 | 2018-04-13 | 中国人民解放军国防科技大学 | 一种高频段声表面波器件电极的制备方法 |
CN108039873A (zh) * | 2017-11-30 | 2018-05-15 | 深圳华远微电科技有限公司 | 一种芯片级声表面波滤波器制作方法 |
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Effective date of registration: 20240523 Address after: No. 2, Lianshan Industrial Zone, Gushan Village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province, 362343 Patentee after: Quanzhou San'an integrated circuit Co.,Ltd. Country or region after: China Address before: No.753-799 Min'an Avenue, Hongtang Town, Tong'an District, Xiamen City, Fujian Province, 361000 Patentee before: XIAMEN SANAN INTEGRATED CIRCUIT Co.,Ltd. Country or region before: China |