CN112424307A - 用于半导体电路连接的粘合剂组合物、使用其的用于半导体的粘合剂膜、用于制造半导体封装的方法和半导体封装 - Google Patents
用于半导体电路连接的粘合剂组合物、使用其的用于半导体的粘合剂膜、用于制造半导体封装的方法和半导体封装 Download PDFInfo
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- CN112424307A CN112424307A CN202080003960.7A CN202080003960A CN112424307A CN 112424307 A CN112424307 A CN 112424307A CN 202080003960 A CN202080003960 A CN 202080003960A CN 112424307 A CN112424307 A CN 112424307A
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- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
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- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical compound OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
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- PEQHIRFAKIASBK-UHFFFAOYSA-N tetraphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 PEQHIRFAKIASBK-UHFFFAOYSA-N 0.000 description 1
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- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
- C09J163/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/38—Epoxy compounds containing three or more epoxy groups together with di-epoxy compounds
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Abstract
本公开涉及用于半导体粘合的树脂组合物、以及使用其的用于半导体的粘合剂膜、用于制造半导体封装的方法和半导体封装,所述用于半导体粘合的树脂组合物包含:热塑性树脂;热固性树脂;固化剂;和具有特定结构的固化催化剂化合物。
Description
技术领域
相关申请的交叉引用
本申请要求向韩国知识产权局于2019年5月10日提交的韩国专利申请第10-2019-0055222号和于2020年5月7日提交的韩国专利申请第10-2020-0054681号的权益,其公开内容通过引用整体并入本文。
本公开涉及用于半导体电路连接的粘合剂组合物、以及使用其的用于半导体的粘合剂膜、用于制造半导体封装的方法和半导体封装。
背景技术
近来,随着电子设备的朝向小型化、高功能化、和容量增大的趋势扩大,以及对于半导体封装的致密化和高集成的需求快速增加,半导体芯片的尺寸变得越来越大。在改善集成度方面,用于以多级式层合芯片的堆叠封装法逐渐增加。
此外,近来,已经开发了使用硅通孔(through silicon via,TSV)的半导体,并且已经进行了通过凸块接合的信号传输。对于这样的凸块接合,主要应用热压接合技术。此时,热压接合技术中的粘合剂的热固化特性影响封装制造可加工性和封装可靠性。
已经开发了糊料形式的非导电糊料(non-conductive paste,NCP)作为用于在各自TSV层之间填充的粘合剂,但存在的问题在于:凸块的间距变得更窄以及填充变得更困难。为了克服这些问题,已经开发了以膜形式提供的非导电膜(non-conductive film,NCF)。
在用于凸块接合的热压接合期间,粘合剂必须在高温下快速固化,固化必须在室温下被抑制,并且储存稳定性应该良好。在这样的粘合剂中,催化剂在调节固化程度方面起到重要作用,并且已经开发了用于该目的的热潜伏性催化剂。
发明内容
技术问题
本公开的一个目的是提供用于半导体电路连接的粘合剂组合物,所述用于半导体电路连接的粘合剂组合物具有在室温下的优异的储存稳定性,同时在热压接合期间的高温下在短时间内可固化。
本公开的另一个目的是提供包含上述用于半导体电路连接的粘合剂组合物的粘合剂膜。
本公开的另一个目的是提供使用上述粘合剂膜的用于制造半导体封装的方法。
本公开的又一个目的是提供使用上述粘合剂膜的半导体封装。
技术方案
本文提供了用于半导体粘合的树脂组合物,其包含:热塑性树脂;热固性树脂;固化剂;和由以下化学式1表示的固化催化剂。
[化学式1]
在化学式1中,R1为氢、具有1至10个碳原子的烷基、或具有6至30个碳原子的芳基中之一,
R2为由以下化学式2表示的官能团,
R3和R4中的至少一者为吸电子官能团,而余者为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一,
[化学式2]
在化学式2中,R5可以为氢、羟基、氨基、卤素基团、具有1至10个碳原子的烷基、具有3至8个碳原子的环烷基、具有2至8个碳原子的杂环烷基、具有6至30个碳原子的芳基、具有6至30个碳原子的杂芳基、或具有1至10个碳原子的烷氧基中之一。
本文还提供了用于半导体的粘合剂膜,其包含上述用于半导体粘合的树脂组合物的固化产物。
本文进一步提供了用于制造半导体封装的方法,所述方法包括使其上层合有用于半导体的粘合剂膜的基底、和半导体基底经受热压接合的步骤。
在下文中,将更详细地描述根据本公开的具体实施方案的用于半导体电路连接的粘合剂组合物、粘合剂膜和用于制造半导体封装的方法。
除非本文中明确规定,否则技术术语仅用于描述具体的示例性实施方案而不旨在限制本公开。
除非上下文另外清楚地指出,否则本文中所使用的单数形式包括复数指代。
应当理解,本文中所使用的术语“包含”、“包括”等旨在指明特定的特征、区域、整数、步骤、操作、要素和/或组成部分,并且这些不排除存在或添加另外的特征、整数、步骤、操作、要素、组成部分和/或组的可能性。
包括诸如“第一”、“第二”等的序数的术语仅用于区别一个组成部分与另一个组成部分的目的,并且不受序数限制。例如,在不脱离本公开的范围的情况下,第一组成部分可以被称为第二组成部分,或者类似地,第二组成部分可以被称为第一组成部分。
如本文中所使用的,重均分子量如下测量:使用配备有Agilent Mixed B柱的Aters Alliance 2695仪器,评估温度为40℃,溶剂为四氢呋喃,流量为1.0mL/分钟,以1mg/10mL的浓度准备样品,然后以100μL的量进样,以及Mw的值使用由聚苯乙烯标准物形成的校准曲线来确定。聚苯乙烯标准物的分子量为2,000/10,000/30,000/70,000/200,000/700,000/2,000,000/4,000,000/10,000,000的9种类型。
如本文中所使用的,术语“经取代的”意指键合有代替化合物中的氢原子的其他官能团,并且待取代的位置没有限制,只要该位置为氢原子被替代的位置,即,取代基可取代的位置即可。当两个或更多个取代基进行取代时,所述两个或更多个取代基可以彼此相同或不同。
如本文中所使用的,术语“经取代或未经取代的”意指未经取代或者经选自以下中的一个或更多个取代基取代:氘;卤素基团;氰基;硝基;羟基;羰基;酯基;酰亚胺基;酰胺基;伯氨基;羧基;磺酸基;磺胺基;氧化膦基;烷氧基;芳氧基;烷基硫基;芳基硫基;烷基磺酰基;芳基磺酰基;甲硅烷基;硼基;烷基;环烷基;烯基;芳基;芳烷基;芳烯基;烷基芳基;烷氧基甲硅烷基烷基;芳基膦基;或含有N、O和S原子中的至少一者的杂环基,或者未经取代或经以上例示的取代基中的两个或更多个取代基相连接的取代基取代。例如“两个或更多个取代基相连接的取代基”可以为联苯基。即,联苯基也可以为芳基,并且还可以解释为两个苯基相连接的取代基。
在本公开中,多价官能团为其中键合至任意化合物的复数个氢原子被除去的残基,例如,其可以为二价官能团、三价官能团和四价官能团。作为实例,衍生自环丁烷的四价官能团意指其中键合至环丁烷的任意四个氢原子被除去的残基。
在本公开中,卤素的实例可以为氟、氯、溴或碘。
在本公开中,烷基为衍生自烷烃的一价官能团,并且可以为直链或支链。直链烷基的碳原子数没有特别限制,但优选为1至20。此外,支链烷基的碳原子数为3至20。烷基的具体实例包括甲基、乙基、丙基、正丙基、异丙基、丁基、正丁基、异丁基、叔丁基、仲丁基、1-甲基-丁基、1-乙基-丁基、戊基、正戊基、异戊基、新戊基、叔戊基、己基、正己基、1-甲基戊基、2-甲基戊基、4-甲基-2-戊基、3,3-二甲基丁基、2-乙基丁基、庚基、正庚基、1-甲基己基、辛基、正辛基、叔辛基、1-甲基庚基、2-乙基己基、2-丙基戊基、正壬基、2,2-二甲基庚基、1-乙基-丙基、1,1-二甲基-丙基、异己基、2-甲基戊基、4-甲基己基、5-甲基己基、2,6-二甲基庚烷-4-基等,但不限于此。烷基可以为经取代或未经取代的。
在本公开中,卤代烷基意指其中上述烷基被卤素基团取代的官能团,并且卤素基团的实例为氟、氯、溴或碘。卤代烷基可以为经取代或未经取代的。
在本公开中,芳基为衍生自芳烃的一价官能团,并且可以为单环芳基或多环芳基。单环芳基可以为苯基、联苯基、三联苯基等,但不限于此。多环芳基可以为萘基、蒽基、菲基、芘基、苝基、基和芴基等,但不限于此。芳基可以为经取代或未经取代的。
在本公开中,直接键或单键意指通过键合线连接,其中在相应位置处不存在原子或原子团。
I.用于半导体粘合的树脂组合物
根据本公开的一个实施方案,可以提供用于半导体粘合的树脂组合物,所述树脂组合物包含:热塑性树脂;热固性树脂;固化剂;和由化学式1表示的固化催化剂。
本发明人对可以用于半导体器件的接合或封装的组分进行了研究,并且通过实验发现,与常规的用于半导体封装的树脂组合物相比,当如在根据一个实施方案的用于半导体粘合的树脂组合物中包含化学式1的化合物时,其具有优异的室温下的储存稳定性,同时在制造半导体封装的过程中在热压接合期间的高温下在短时间内可固化。基于这些发现完成了本公开。
具体地,如在化学式1中由R2表示的,由于在咪唑化合物中取代有由化学式2表示的官能团,因此不仅使咪唑化合物的含有未共用电子对的氮原子的亲核性降低,而且通过由化学式2表示的官能团可以引起位阻。
即,在室温下通过催化剂的钝化可以延迟固化反应,并且在热压接合期间催化剂在高于固化温度的温度下被活化,使得实施方案的用于半导体粘合的树脂组合物可以具有在高温下的快速固化的特性以及在室温下的长期储存稳定性。
此外,现有技术中广泛使用的未经取代的咪唑化合物或其中仅取代有烃基团和/或卤素基团的咪唑化合物在约150℃下开始固化,其引起难以控制固化程度的技术问题。另一方面,由于根据本公开的一个实施方案的用于半导体粘合的树脂组合物包含其中键合有至少一个包含羰基的官能团(如化学式2所示)的化合物,因此其与现有技术中广泛使用的未经取代的咪唑化合物或其中仅取代有烃基团和/或卤素基团的咪唑化合物相比,不仅可以使未共用电子对的亲核性更加降低,而且可以形成体积大的结构,由此降低了化学式1的化合物的反应性,因此,在室温下,反应速率得以延迟以进一步增加储存稳定性改善的效果,并且在200℃或更高的温度下,固化快速进行,并且在半导体封装的制造中可加工性和封装可靠性可以显著增加。
更详细地,查看一个实施方案的用于半导体粘合的树脂组合物,在化学式1中,R1为氢、具有1至10个碳原子的烷基、或具有6至30个碳原子的芳基中之一,R2为由化学式2表示的官能团,R3和R4中的至少一者为吸电子官能团,而余者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
由于由化学式2表示的官能团包含-(C=O)-键,因此其可以充当吸电子基团。即,由于用由化学式2表示的官能团取代化学式1的化合物,因此包含在化学式1的化合物中的氮原子的未共用电子对所具有的亲核性降低,使得实施方案的包含化学式1的化合物的用于半导体粘合的树脂组合物具有在室温下的延迟的反应速率,从而具有优异的储存稳定性和高的固化温度。
此外,由于由化学式2表示的官能团包含-(C=O)-键,因此其与相关技术中广泛使用的吸电子官能团例如卤素相比,可以形成体积大的结构,由此一个实施方案的包含化学式1的化合物的用于半导体粘合的树脂组合物具有在室温下的延迟的反应速率,并因此可以实现优异的储存稳定性、封装制造可加工性和封装可靠性。
根据本公开的一个实施方案,化学式1中的R1可以为氢。
当化学式1中的R1为氢时,由化学式1表示的固化催化剂可以通过互变异构化具有以下共振结构。
即,当化学式1中的R1为氢时,因此,由化学式1表示的固化催化剂通过互变异构化具有上述共振结构,化学式1中的R3和R4具有相同的化学位置,并且可以不具有区域选择性。
根据本公开的一个实施方案,化学式1中的R2可以为由化学式2表示的官能团。
由于由化学式2表示的官能团键合至咪唑化合物中的位置R2,因此无论互变异构化如何由于相邻的位置特性可以影响两个官能团而有效地实现作为电子吸收体的作用,并因此,包含在化学式1的化合物中的氮原子的未共用电子对所具有的亲核性可以降低。从而,一个实施方案的包含化学式1的化合物的用于半导体粘合的树脂组合物可以具有在室温下的延迟的反应速率,并因此具有优异的储存稳定性和高的固化温度。
根据本公开的一个实施方案,化学式1中的R3和R4中的至少一者为吸电子官能团,而余者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
由于化学式1中的R3和R4中的至少一者为吸电子官能团,因此在由化学式1表示的固化催化剂中,除了由化学式2表示的官能团之外,还可以取代有至少一个吸电子官能团。从而,咪唑化合物的含有未共用电子对的氮原子的亲核性降低,并且在室温下通过催化剂的钝化可以延迟固化反应。
根据本公开的另一个实施方案,由于化学式1中的R1为氢,以及化学式1中的R3和R4中的一者为吸电子基团,因此在由化学式1表示的固化催化剂中,可以在咪唑化合物的第二个碳和第五个碳上取代有吸电子官能团。
具体地,化学式1中的R3和R4中的一者为吸电子官能团,以及另一者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一,
即,在由化学式1表示的固化催化剂中,可以取代有包括由化学式2表示的官能团在内的两个吸电子官能团。因此,咪唑化合物的含有未共用电子对的氮原子的亲核性降低,并且在室温下通过催化剂的钝化可以延迟固化反应。
另一方面,当R3和R4二者取代有吸电子官能团时,由化学式1表示的固化催化剂的反应性过度降低,使得固化即使在200℃下或更高时也不会充分进行,因此,可以使封装制造可加工性和封装可靠性降低。
或者,当化学式1中的R1不是氢时,即使由化学式1表示的固化催化剂发生互变异构化,R3和R4也具有不同的化学位置。即,在本公开的一个实施方案中,当化学式1中的R1不是氢时,化学式1中的R4为吸电子官能团,并且R3可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
同时,在化学式1中,吸电子官能团可以为由化学式2表示的官能团、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基、或磺酸基中之一。
即,化学式1中的R3和R4中的至少一者为由化学式2表示的官能团、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基、或磺酸基中之一,而余者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
更具体地,化学式1中的R3和R4中的一者为由化学式2表示的官能团、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基、或磺酸基中之一,以及另一者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
因此,由化学式1表示的固化催化剂经两个吸电子官能团取代,并且它们中的至少一者可以为由化学式2表示的官能团。
根据本公开的一个实施方案,由于化学式2中的R5为氢、羟基、氨基、卤素基团、具有1至10个碳原子的烷基、具有3至8个碳原子的环烷基、具有2至8个碳原子的杂环烷基、具有6至30个碳原子的芳基、具有6至30个碳原子的杂芳基和具有1至10个碳原子的烷氧基中之一,因此由化学式2表示的官能团可以为甲酰基、羧酸基、酰胺基、酰基、酮基和酯基中之一。
优选地,化学式2中的R5可以为氢、羟基和具有1至10个碳原子的烷氧基中之一,由此,由化学式2表示的官能团可以为甲酰基、羧酸基、和酯基中之一。
更具体地,由化学式1表示的固化催化剂可以包括由以下化学式3表示的化合物。
[化学式3]
在化学式3中,R6为氢、具有1至10个碳原子的烷基、或具有6至30个碳原子的芳基中之一,R7为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基或具有1至10个碳原子的酯基中之一,R8和R9中的一者为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基、具有1至10个碳原子的酯基、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基或磺酸基中之一,而另一者为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
具体地,如化学式3中由R7表示的,由于咪唑化合物经甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基、或具有1至10个碳原子的酯基中之一取代,因此通过由化学式2表示的官能团不仅使咪唑化合物的含有未共用电子对的氮原子的亲核性降低,而且可以引起位阻。
即,在室温下,通过催化剂的钝化可以延迟固化反应,并且在高于固化温度的高温下,催化剂在热压接合期间被活化,由此实施方案的用于半导体粘合的树脂组合物可以具有在高温下的快速固化的特性和在室温下的长期储存稳定性。
此外,现有技术中广泛使用的未经取代的咪唑化合物或其中仅取代有烃基团和/或卤素基团的咪唑化合物在约150℃下开始固化,其引起难以控制固化程度的技术问题。另一方面,由于根据本公开的一个实施方案的用于半导体粘合的树脂组合物包含其中与化学式3中的R7相似地键合有至少一个含有羰基的官能团的化合物,因此其与现有技术中广泛使用的未经取代的咪唑化合物或其中仅取代有烃基团和/或卤素基团的咪唑化合物相比,不仅使未共用电子对的亲核性更加降低,而且可以形成体积大的结构,由此降低了化学式1的化合物的反应性,因此,在室温下,反应速率可以延迟以进一步增加储存稳定性改善的效果,并且在200℃或更高的温度下,固化快速进行,并且在半导体封装的制造中可加工性和封装可靠性可以显著增加。
由于化学式3中的R7包含-(C=O)-键,因此其可以作为吸电子基团。即,由于化学式3的固化催化剂取代有含有-(C=O)-键的官能团,因此氮原子的未共用电子对所具有的亲核性降低,由此一个实施方案的包含化学式3的固化催化剂的用于半导体粘合的树脂组合物具有在室温下的延迟的反应速率,并因此具有优异的储存稳定性和高的固化温度。
此外,由于化学式3中的R7包含-(C=O)-键,因此其与现有技术中已经被广泛使用的吸电子官能团例如卤素基团相比,可以形成体积大的结构,由此实施方案的包含化学式3的固化催化剂的用于半导体粘合的树脂组合物具有在室温下的延迟的反应速率,并且可以实现优异的储存稳定性、封装制造可加工性和封装可靠性。
根据本公开的一个实施方案,化学式3中的R6可以为氢。
其中化学式3中的R6为氢的情况下产生的效果与上述对于化学式1中的R1的效果相同。即,由于含有-(C=O)-键的官能团键合至咪唑化合物中的位置R6,因此无论互变异构化如何由于相邻的位置特性可以影响两个官能团而有效地实现作为吸电子体的作用,因此,包含在化学式3的化合物中的氮原子的未共用电子对所具有的亲核性可以降低。从而,一个实施方案的包含化学式3的化合物的用于半导体粘合的树脂组合物可以具有在室温下的延迟的反应速率,并因此具有优异的储存稳定性和高的固化温度。
根据本公开的一个实施方案,化学式3中的R8和R9中的一者为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1中10个碳原子的酰基、具有1至10个碳原子的酮基、具有1至10个碳原子的酯基、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基或磺酸基中之一,以及另一者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
更具体地,化学式3中的R8和R9中的一者为硝基,以及另一者可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
根据本公开的上述另一个实施方案,化学式3中的R6为氢,以及化学式3中的R8和R9中的一者为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基、具有1至10个碳原子的酯基、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基或磺酸基中之一,由此在由化学式3表示的化合物中,可以在咪唑化合物的第二个碳和第五个碳处取代有吸电子官能团。
另一方面,当R8和R9二者均取代有吸电子官能团时,由化学式3表示的化合物的反应性过度降低,固化即使在200℃下或更高时也可能无法充分进行,因此,可能降低半导体制造可加工性和封装可靠性。
或者,当化学式3中的R6不是氢时,基于以上描述,化学式3中的R9可以为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基、具有1至10个碳原子的酯基、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基或磺酸基中之一,以及R8可以为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1中10个碳原子的烷氧基中之一。
由化学式1表示的固化催化剂的实例没有特别限制,但是例如,由化学式1表示的固化催化剂可以包括由化学式1-1至1-5表示的化合物中的一者。
[化学式1-1]
[化学式1-2]
[化学式1-3]
[化学式1-4]
[化学式1-5]
同时,由化学式1表示的固化催化剂可以与热塑性树脂、热固性树脂、或固化剂中的至少一者在200℃或更高的温度下反应。
即,由于由化学式1表示的固化催化剂包含至少一个如上所述的由化学式2表示的官能团,因此反应速率得到控制,并且在室温下反应慢,因此实现优异的储存稳定性,同时,在200℃或更高的温度下,与热塑性树脂、热固性树脂、或固化剂中的至少一者的反应快速进行,因此实现了容易控制固化程度的技术效果。
基于100重量份的用于半导体粘合的树脂组合物,用于半导体粘合的树脂组合物可以包含0.05重量份或更多且15重量份或更少的由化学式1表示的固化催化剂。
当基于100重量份的用于半导体粘合的树脂组合物,用于半导体粘合的树脂组合物包含少于0.05重量份的由化学式1表示的固化催化剂时,在制造半导体封装时的热压接合步骤中,无法确保固化程度或者出现宽的反应温度部分,因此在特定温度下快速固化的快速固化特性可能丧失。
当基于100重量份的用于半导体粘合的树脂组合物,用于半导体粘合的树脂组合物包含多于15重量份的由化学式1表示的固化催化剂时,在制造半导体封装时,在热压接合步骤之前即使在室温下一些催化剂也可以被活化而进行反应,这引起储存稳定性劣化的技术问题。
热塑性树脂可以包括选自聚酰亚胺、聚醚酰亚胺、聚酯酰亚胺、聚酰胺、聚醚砜、聚醚酮、聚烯烃、聚氯乙烯、聚酚氧、反应性丁二烯丙烯腈共聚物橡胶和(甲基)丙烯酸酯树脂中的至少一种聚合物树脂。
优选地,作为热塑性树脂,可以应用玻璃化转变温度为-10℃至30℃且重均分子量为200,000g/mol至1,000,000g/mol的基于(甲基)丙烯酸酯的树脂。
丙烯酸类树脂为含环氧基的丙烯酸类共聚物,并且基于总重量,可以包含1重量%至25重量%、或2重量%至20重量%、或2.5重量%至15重量%的丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯。
在此,当基于(甲基)丙烯酸酯的树脂中的环氧基的含量小于1重量%时,与环氧树脂的相容性和粘合力不足。当该含量超过25重量%时,由于固化造成的粘度升高速率太高,使得在半导体器件的热压接合过程中焊接凸块可能无法充分接合并嵌入。
考虑到粘合剂膜的制造期间组合物的流动性控制,基于100重量份的热固性树脂,热塑性树脂可以以10重量份至1,500重量份的量包含在内。
热固性树脂可以包括选自固体环氧树脂和液体环氧树脂中的至少一者。
具体地,环氧树脂可以为选自以下中的一者或更多者:基于双酚的环氧树脂、基于联苯的环氧树脂、基于萘的环氧树脂、基于芴的环氧树脂、基于苯酚酚醛清漆的环氧树脂、基于甲酚酚醛清漆的环氧树脂、基于双酚酚醛清漆的环氧树脂、基于联苯酚醛清漆的环氧树脂、基于三羟基苯基甲烷的环氧树脂、基于四苯基甲烷的环氧树脂、基于二环戊二烯的环氧树脂、以及二环戊二烯改性的苯酚型环氧树脂和脂环族环氧树脂。
在此,基于双酚的环氧树脂可以包括双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂等。
当应用两种类型的环氧树脂作为热固性树脂时,可以将在10℃至35℃下为液体的环氧树脂和在10℃至35℃下为固体的环氧树脂通过以1:0.1至1:5的重量比混合而使用。
此时,当固体环氧树脂相对于液体环氧树脂的含量小于0.1的重量比时,在管芯附接过程中树脂可能过度流出,其可能引起污染,并且粘合剂层的粘性强,其可能显著降低拾取特性。另一方面,当固体环氧树脂相对于液体环氧树脂的含量超过5.0的重量比时,其在与热塑性树脂的相容性和反应性方面可能是不利的。
此外,环氧树脂还可以包括选自软化点为50℃至100℃的甲酚酚醛清漆型环氧树脂和软化点为50℃至100℃的双酚A环氧树脂中的至少一种环氧树脂、以及软化点为50℃至100℃的基于联苯的环氧树脂。
此时,相对于软化点为50℃至100℃的基于联苯的环氧树脂,环氧树脂可以包括重量比为0.25至1.25、或0.3至1.1的选自软化点为50℃至100℃的甲酚酚醛清漆型环氧树脂和软化点为50℃至100℃的双酚A环氧树脂中的一种或更多种环氧树脂。
环氧树脂的平均环氧当量可以为100至1,000。平均环氧当量可以基于环氧树脂中包含的各环氧树脂的重量比和环氧当量来确定。
基于100重量份的全部树脂组合物中的固体含量,热固性树脂可以以15重量份至80重量份的量使用。
固化剂可以包括软化点为70℃或更高的酚树脂。
例如,可以优选地使用基于酚醛清漆的酚树脂作为固化剂。
基于酚醛清漆的酚树脂具有其中环位于反应性官能团之间的化学结构。由于这些结构特性,基于酚醛清漆的酚树脂还可以降低粘合剂组合物的吸湿性,还可以增加高温IR回流过程中的稳定性。因此,可以起到防止粘合剂膜的剥离现象、回流开裂等的作用。
基于酚醛清漆的酚树脂的具体实例可以包括选自以下中的一者或更多者:酚醛清漆酚醛树脂、新酚(Xylok)酚醛清漆酚醛树脂、甲酚酚醛清漆酚醛树脂、联苯酚醛清漆酚醛树脂、双酚A酚醛清漆酚醛树脂、和双酚F酚醛清漆酚醛树脂。
设计软化点为70℃或更高的基于酚醛清漆的酚树脂以在粘合剂组合物固化之后具有足够的耐热性、强度和粘合性。然而,如果基于酚醛清漆的酚树脂的软化点太高,则粘合剂组合物的流动性降低,并且在实际半导体制造过程中在粘合剂内部产生空隙,从而显著降低最终产品的可靠性或品质。
可以考虑到最终制造的粘合剂膜的物理特性等来适当地选择固化剂的含量。例如,基于100重量份的用于半导体粘合的树脂组合物,固化剂可以以10重量份或更大且700重量份或更小、或者30重量份或更大且300重量份或更小的量使用。
另一方面,实施方案的用于半导体粘合的树脂组合物还可以包含无机填料。
作为无机填料,可以应用选自以下中的一种或更多种无机颗粒:氧化铝、二氧化硅、硫酸钡、氢氧化镁、碳酸镁、硅酸镁、氧化镁、硅酸钙、碳酸钙、氧化钙、氢氧化铝、氮化铝、和硼酸铝。
还可以使用可以吸附离子杂质以改善可靠性的离子吸附剂作为无机填料。作为离子吸附剂,可以应用选自以下中的一种或更多种无机颗粒:镁型例如氢氧化镁、碳酸镁、硅酸镁或氧化镁,硅酸钙,碳酸钙,氧化钙,氧化铝,氢氧化铝,氮化铝,硼酸铝晶须,基于锆的无机材料和基于锑铋的无机材料。
作为无机填料,可以优选地应用平均粒径(基于最长外径)为0.01μm至10μm、或0.02μm至5.0μm、或0.03μm至2.0μm的那些。当无机填料的粒径太小时,则其可能在粘合剂组合物中容易聚集。另一方面,当无机填料的粒径太大时,则可能由于无机填料引起对半导体电路的损坏和粘合剂膜的粘合性的劣化。
基于100重量份的用于半导体粘合的树脂组合物,无机填料的含量可以为10重量份或更大且300重量份或更小,或者15重量份或更大且250重量份或更小。
上述实施方案的用于半导体粘合的树脂组合物可以另外地添加添加剂,例如熔剂、流平剂、消泡剂,以用于除去焊料的氧化膜。
此外,基于100重量份的用于半导体粘合的树脂组合物,用于半导体粘合的树脂组合物可以包含10重量份或更多且200重量份或更少的有机溶剂。可以考虑到粘合剂组合物和最终生产的粘合剂膜的物理特性或生产过程来确定有机溶剂的含量。
有机溶剂可以为选自酯、醚、酮、芳族烃和亚砜中的一种或更多种化合物。
酯溶剂可以为乙酸乙酯、乙酸正丁酯、乙酸异丁酯、甲酸戊酯、乙酸异戊酯、乙酸异丁酯、丙酸丁酯、丁酸异丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁内酯、ε-己内酯、δ-戊内酯、氧乙酸烷基酯(例如,氧乙酸甲酯、氧乙酸乙酯、氧乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等)、3-氧丙酸烷基酯(例如,3-氧丙酸甲酯、3-氧丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等)、2-氧丙酸烷基酯(例如,2-氧丙酸甲酯、2-氧丙酸乙酯、2-氧丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯)、2-氧基-2-甲基丙酸甲酯和2-氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙酰乙酸甲酯、乙酰乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等。
醚溶剂可以为二乙二醇二甲醚、四氢呋喃、乙二醇单甲醚、乙二醇单乙醚、甲基溶纤剂乙酸酯、乙基溶纤剂乙酸酯、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、丙二醇单甲醚、丙二醇单甲醚乙酸酯、丙二醇单乙醚乙酸酯、丙二醇单丙醚乙酸酯等。
酮溶剂可以为甲基乙基酮、环己酮、环戊酮、2-庚酮、3-庚酮、N-甲基-2-吡咯烷酮等。
芳族烃溶剂可以为甲苯、二甲苯、苯甲醚、柠檬烯等。
亚砜溶剂可以为二甲基亚砜等。
此外,用于半导体粘合的树脂组合物可以包含偶联剂。偶联剂的类型没有特别限制,但优选可以应用2-(3,4-环氧环己基)乙基三甲氧基硅烷、3-环氧丙氧基丙基三甲氧基硅烷、3-环氧丙氧基丙基甲基-二乙氧基硅烷、3-环氧丙氧基丙基三乙氧基硅烷、N-(2-氨基乙基)-3-氨基丙基甲基二甲氧基硅烷、N-(2-氨基乙基)-3-氨基丙基三甲氧基硅烷、N-(2-氨基乙基)-3-氨基丙基三乙氧基硅烷、3-氨基丙基-三甲氧基硅烷、3-氨基丙基三乙氧基硅烷、3-三乙氧基-N-(1,3-二甲基亚丁基)丙胺、N-苯基-3-氨基丙基三甲氧基硅烷、含巯基的3-巯基丙基甲基二甲氧基硅烷、3-巯基丙基三甲氧基硅烷等。
II.用于半导体的粘合剂膜
根据本公开的另一个实施方案,提供了包含上述用于半导体粘合的树脂组合物的固化产物的用于半导体的粘合剂膜。固化产物意指通过一个实施方案的用于半导体粘合的树脂组合物的固化步骤而获得的材料。
由于用于半导体的粘合剂膜包含上述实施方案的用于半导体粘合的树脂组合物的固化产物,因此其可以表现出如下特性:在表现出室温下的优异的储存稳定性的同时在热压接合期间的高温下可以在短时间内固化。
作为用于支撑用于半导体的粘合剂膜的支撑基底,可以使用具有优异的耐热性和耐化学性的树脂膜;通过使构成树脂膜的树脂交联而获得的交联膜;或通过将有机硅树脂等施加在所述树脂膜的表面上而经受离型处理的膜等。
作为构成树脂膜的树脂,可以应用聚烯烃,例如聚酯、聚乙烯、聚丙烯、聚丁烯、或聚丁二烯,氯乙烯,乙烯-甲基丙烯酸共聚物,乙烯乙酸乙烯酯共聚物,聚酯,聚酰亚胺,聚对苯二甲酸乙二醇酯,聚酰胺,聚氨酯,等等。
支撑基底的厚度没有特别限制,但可以为3μm至400μm、或5μm至200μm、或10μm至150μm。
粘合剂层由上述用于半导体粘合的树脂组合物构成。关于用于半导体粘合的树脂组合物的细节与以上描述的相同。
此外,根据需要,可以在支撑基底与粘合剂层之间插入压敏粘合剂层。作为压敏粘合剂层,可以没有特别限制地应用本领域已知的那些。
保护膜的类型没有特别限制,并且可以应用本领域中已知的塑料膜。例如,保护膜可以为包含例如以下的树脂的塑料膜:低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、聚丙烯无规共聚物、聚丙烯嵌段共聚物、均聚丙烯、聚甲基戊烯、乙烯乙酸乙烯酯共聚物、乙烯-甲基丙烯酸共聚物、乙烯-甲基丙烯酸甲酯共聚物、乙烯-离聚物共聚物、乙烯-乙烯基醇共聚物、聚丁烯、苯乙烯共聚物等。
用于半导体的粘合剂膜可以通过包括以下的方法制备:将用于半导体粘合的树脂组合物的组分混合,将混合物在支撑基底上涂覆至预定的厚度以形成粘合剂层,并将粘合剂层干燥。
此外,用于半导体的粘合剂膜可以通过包括以下的方法制备:在支撑基底上形成粘合剂层然后在粘合剂层上层合保护膜。
此外,用于半导体的粘合剂膜可以通过包括以下的方法制备:在支撑基底上形成压敏粘合剂层,然后在压敏粘合剂层上顺序地层合粘合剂层和保护膜。
作为用于在支撑基底上形成粘合剂层的方法,可以使用这样的方法:将粘合剂组合物原样涂覆,或者将其在适当的有机溶剂中稀释并通过已知的装置例如逗号涂覆机、凹版涂覆机、模涂机、反向涂覆机等将其涂覆在支撑基底或离型膜上,然后将所得物在60℃至200℃的温度下干燥10秒至30分钟。
如果必要,还可以进行老化过程以进行粘合剂层的充分的交联反应。
粘合剂层的厚度可以在1μm至500μm、或5μm至100μm、或5μm至50μm的范围内适当地调节。粘合剂层的厚度没有特别限制,但是例如,其可以在0.01μm至1000μm的范围内自由调节。当粘合剂层的厚度增加或减小特定的数值时,粘合剂层中测量的物理特性也可以改变一定的数值。
另一方面,一个实施方案的用于半导体的粘合剂膜的熔体粘度可以为6000Pa.s或更小、4000Pa.s或更大且6000Pa.s或更小、4000Pa.s或更大且5900Pa.s或更小、4200Pa.s或更大且5813Pa.s或更小、4200Pa.s或更大且5000Pa.s或更小、4200Pa.s或更大且4900Pa.s或更小、4500Pa.s或更大且4900Pa.s或更小、或者4800Pa.s或更大且4900Pa.s或更小。具体地,熔体粘度可以为在层合上述一个实施方案的用于半导体的粘合剂膜之后,针对层合试样,通过使用TA Corporation的高级流变扩展系统(advanced rheometric expansionsystem,ARES)测量的测量值的最低数值的粘度值。
当用于半导体的粘合剂膜的熔体粘度超过6000Pa.s时,可能出现其中易于在应用粘合剂膜的半导体封装中留下空隙的技术问题。
同时,一个实施方案的用于半导体的粘合剂膜的DSC起始温度可以为185℃或更高、185℃或更高且250℃或更低、190℃或更高且220℃或更低、195℃或更高且213℃或更低、200℃或更高且213℃或更低、205℃或更高且213℃或更低、或者210℃或更高且213℃或更低。具体地,DSC起始温度可以使用差热分析仪(DSC)来测量,并且其可以是在其中初始反应峰开始形成的部分的切线与基线的外推之间的交点处的温度。此外,DSC起始温度可以意指固化开始温度。
当用于半导体的粘合剂膜的DSC起始温度小于185℃时,固化可能在低温下开始,其可以引起难以控制固化程度的技术问题。
优选地,一个实施方案的用于半导体的粘合剂膜的熔体粘度可以为6000Pa.s或更小,并且同时,DSC起始温度为185℃或更高。即,由于一个实施方案的用于半导体的粘合剂膜具有185℃或更高的高DSC起始温度,因此在涂覆期间,在干燥过程的温度范围内基本上不显示出细微反应,由此,其可以具有6000Pa.s或更小的低熔点粘度。
由于一个实施方案的用于半导体的粘合剂膜的熔体粘度为6000Pa.s或更小,并且同时,DSC起始温度为185℃或更高,因此不仅不在应用粘合剂膜的半导体封装中留下空隙,而且可以实现可以容易地控制用于半导体的粘合剂膜的固化程度的技术效果。
III.用于制造半导体封装的方法
根据本公开的又一个实施方案,可以提供用于制造半导体封装的方法,其包括:使其上层合有用于半导体的粘合剂膜的基底、和半导体基底经受热压接合的步骤。
具体地,优选地在120℃或更高的高温下通过施加恒定的压力在短时间内进行热压接合过程。
优选地,可以在120℃或更高、120℃或更高且300℃或更低、或者200℃或更高且300℃或更低的温度下进行热压接合。
如果温度为300℃或更高,存在的问题在于非导电膜热分解并产生排气。
此外,热压接合可以在10N至300N、或50N至250N的压力条件下进行0.5秒至10秒、或1秒至15秒。
此外,如果热压接合期间的压力为10N或更小,则存在的问题在于凸块与焊盘之间的连接困难。此外,如果压力为300N或更大,则存在的风险在于凸块可能被损坏或芯片可能破裂。
此外,在120℃或更高的高温下进行热压接合步骤之前,可以进行在50℃至150℃的温度下进行临时接合0.1秒至10秒的步骤。
此外,在热压接合步骤之前,还可以包括除去用于半导体的粘合剂膜的压敏粘合剂层的步骤。在该热压接合过程中,使用部分固化的用于半导体的粘合剂膜,使得不产生空隙或树脂嵌入,并且使嵌条(fillet)最小化,从而制造具有改善的可靠性的半导体封装。
其上层合有用于半导体的粘合剂膜的基底的制备可以通过将用于半导体的粘合剂膜真空层合在基底上来进行。即,根据一个实施方案的用于制造半导体封装的方法还可以包括在热压接合步骤之前将用于半导体的粘合剂膜层合至基底的步骤。
优选地,在本公开中,将用于半导体的粘合剂膜层合在基底上的步骤优选地在真空条件下在40℃至130℃或40℃至100℃下进行。此时,在真空层合期间,如果温度为40℃或更低,则存在的问题在于膜的流动性低并因此无法填充凸块之间的间隙。如果温度为130℃或更高,则存在的问题在于在层合期间发生热固化并且熔体粘度增加,使得不表现出填充特性。即,当在凸块基底上真空层合用于半导体密封的材料时,使用用于半导体的粘合剂膜使得精细间距凸块在层合温度下被有效地掩埋。
在将用于半导体的粘合剂膜层合在基底上的步骤之后,所述方法还可以包括向其上层合有用于半导体的粘合剂膜的基底照射紫外线。
用紫外线照射其上层合有用于半导体的粘合剂膜的基底的步骤在0.1mJ/cm2至1000mJ/cm2的光量下进行。即,以上步骤使用具有恒定波长带的UV,并且根据凸块的高度、非导电膜的厚度、基底膜和粘合剂层的厚度而不同,但优选地使用利用0.1mJ/cm2至1000mJ/cm2或100mJ/cm2至1000mJ/cm2或300mJ/cm2至800mJ/cm2的光量的紫外光进行照射。
此外,在本公开中,除了使用上述用于半导体的粘合剂膜的配置之外,还可以进行常规的封装过程。
例如,封装过程包括:晶片测试过程,在此期间检查有缺陷的半导体芯片;切片过程,其中将晶片切割成单个芯片;管芯接合过程,其中将单独的芯片附接至电路膜或引线框的安装板;导线接合过程,其中经由电连接手段(例如导线)将设置在半导体芯片上的芯片焊盘与电路膜或引线框的电路图案连接;等等。此时,在切片过程之前,可以进行用于使基底(晶片)薄化至期望厚度的背面研磨过程。
IV.半导体封装
此外,本公开提供了包括上述用于半导体的粘合剂膜的半导体封装。
通过上述半导体封装制造方法可以将用于半导体的粘合剂膜引入到半导体封装中。用于半导体的粘合剂膜可以包含一个实施方案的用于半导体粘合的树脂组合物的固化产物。
用于半导体的粘合剂膜由一个实施方案的用于半导体粘合的树脂组合物来制造,并且可以实现在室温下的优异的储存稳定性,同时在高温下在短时间段内可固化。
此外,由于一个实施方案的半导体封装包括上述用于半导体的粘合剂膜,因此可以实现优异的封装可靠性。
有益效果
根据本公开,可以提供用于半导体电路连接的粘合剂组合物、使用其的用于半导体的粘合剂膜、用于制造半导体封装的方法和半导体封装,所述用于半导体电路连接的粘合剂组合物具有在室温下的优异的储存稳定性,同时在热压接合期间的高温下在短时间内可固化。
具体实施方式
在下文中,将通过实施例更详细地描述本公开的具体实施方案。然而,这些实施例仅用于举例说明本公开的具体实施方案,而不旨在限制本公开的范围。
实施例、比较例和参照例:用于半导体粘合的树脂组合物、粘合剂膜和半导体封装
的制备
实施例1
(1)用于半导体粘合的树脂组合物的制备
如下表1所示,将40g作为环氧树脂固化剂的酚树脂KH-6021(由DIC Corp.制造,双酚A酚醛清漆树脂);30g环氧树脂RE-310S(由Nippon Kayaku Co.,Ltd.制造,双酚A环氧树脂);35g YDCN-500-5P(Kukdo Chemical,甲酚酚醛清漆环氧树脂);15g热塑性丙烯酸酯树脂KG-3015(Mw:900,000,玻璃化转变温度:10℃);1.5g作为固化催化剂的由以下化学式A表示的化合物;1g熔剂和75g无机填料SC-2050(Admatec,球形二氧化硅)混合在甲基乙基酮中以获得用于半导体粘合的树脂组合物(固体含量:45重量%浓度)。
[化学式A]
(2)粘合剂膜的制备
使用逗号涂覆机将以上制备的粘合剂组合物涂覆在经离型处理的聚对苯二甲酸乙二醇酯膜(厚度:38μm)上,然后在110℃下干燥3分钟以获得其中形成有约20μm的厚度的粘合剂层的粘合剂膜。
(3)半导体封装的制造
准备包括凸块芯片(4.5mm×4.5mm)的晶片,其为其中在高度为15μm且间距为50μm的铜填料上以3μm的高度形成有无铅焊料(SnAgCu)的半导体器件。
将粘合剂膜的粘合剂层设置成位于晶片的凸块表面上,并且在50℃下进行真空层合,然后将其单一化成芯片。
使用热压接合器通过热压将单一化的凸块芯片接合在6mm×8mm的具有连接焊盘(间距50μm)的基底芯片上。此时,条件如下:在100℃的机头温度(head temperature)下在100N下临时接合2秒,并且在100℃下静置10分钟,然后将机头温度立即增加到260℃,并使热压接合在100N下进行4秒。
实施例2
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式B表示的化合物作为固化催化剂,如下表1所示。
[化学式B]
实施例3
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式C表示的化合物作为固化催化剂,如下表1所示。
[化学式C]
实施例4
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式D表示的化合物作为固化催化剂,如下表1所示。
[化学式D]
实施例5
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式E表示的化合物作为固化催化剂,如下表1所示。
[化学式E]
比较例1
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式F表示的化合物(2,5-氯-4-乙基咪唑)作为固化催化剂,如下表2所示。
[化学式F]
比较例2
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式G表示的化合物(2,5-双(4-氯苯基)-1H-咪唑)作为固化催化剂,如下表2所示。
[化学式G]
比较例3
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式H表示的化合物(3,3’-(1H-咪唑-2,5-二基)二丙腈)作为固化催化剂,如下表2所示。
[化学式H]
比较例4
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式I表示的化合物作为固化催化剂,如下表2所示。
[化学式I]
参照例1
以与实施例1中相同的方式制备用于半导体粘合的树脂组合物、粘合剂膜和半导体封装,不同之处在于使用由以下化学式J表示的化合物作为固化催化剂,如下表2所示。
[化学式J]
[表1]
[表2]
*KH-6021:酚树脂(DIC,羟基当量:121g/当量,软化点:133℃)
*RE-310S:环氧树脂(Nippon Kayaku,环氧当量:180g/当量)
*YDCN-500-5P:环氧树脂(Kukdo Chemical,甲酚酚醛清漆环氧树脂)
*KG-3015:基于丙烯酸酯的树脂(包含3重量%的甲基丙烯酸缩水甘油酯重复单元,玻璃化转变温度:10℃,重均分子量:900,000)
*SC-2050:填料(Admatec,球形二氧化硅,平均粒径:约400nm)
[实验例:物理特性评估]
测试例
(1)熔体粘度的测量
将分别在实施例、比较例和参照例中获得的粘合剂层堆叠并层合直至厚度变为320μm,然后使用辊式层合机在60℃下进行层合。然后,使各试样成型为直径为8mm的圆形形状,然后使用TA仪器ARES(高级流变扩展系统)在5rad/秒的剪切速率下应用10℃/分钟的升温速率,将最低测量数值的粘度值判定为熔体粘度。
(2)DSC起始的评估
对于实施例、比较例和参照例中获得的粘合剂膜,使用差示扫描量热法(DSC)在30℃至300℃的范围内在10℃/分钟的速率下进行测量,将其中初始反应峰开始形成的部分的切线与基线的外推之间的交点处的温度设定为起始,并将其设定为固化开始温度。
(3)空隙的评估
使用扫描声层析成像(Scanning Acousitic Tomography,SAT)对分别在实施例、比较例和参照例中获得的半导体封装进行观察,并评估为“可接受的”(O)(如果凸块芯片与基底芯片之间的空隙的面积不大于1%)、或者“不可接受的”(X)(如果其大于1%)。
(4)电的评估
将分别在实施例、比较例和参照例中获得的半导体封装评估为“可接受的”(O)(如果可以确认雏菊链(daisy chain)连接),或者评估为“不可接受的”(X)(如果无法确认雏菊链连接)。
(5)连接状况的评估
通过截面抛光使分别在实施例、比较例和参照例中获得的半导体封装中的连接部分暴露,并使用光学显微镜进行观察。如果在连接部分中没有看到夹杂物并且焊料充分润湿布线,则将其指定为“可接受的”(O)评估;而否则将其指定为“不可接受的”(X)的评估。
(6)随时间的室温稳定性的评估
将分别在实施例、比较例和参照例中获得的粘合剂膜在25℃下静置,然后,每天使用差热分析仪(DSC)计算ΔH峰变化量,并通过以上用于测量最小熔体粘度的方法计算最小熔体粘度的变化。当在ΔH峰的情况下的变化率改变了大于20%时或者当在最小熔体粘度的情况下的变化率改变了50%或更大时,将其判定为存在随时间的变化。将其评估为“可接受的”(O)(如果超过4周存在变化),或者“不可接受的”(X)(如果在4周内存在变化)。
(7)阶段稳定性的评估
在使分别在实施例、比较例和参照例中获得的粘合剂膜分别通过差热分析法(DSC)在80℃下经受等温实验8小时和24小时时,计算ΔH峰的变化。如果相对现有的ΔH峰的变化率同时为2%或更小和10%或更小,则将其指定为“可接受的”(O)的评估;而否则指定为“不可接受的”(X)的评估。
[表3]
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | |
熔体粘度(Pa.s) | 4874 | 5813 | 4256 | 4537 | 4640 |
DSC起始(℃) | 213 | 198 | 204 | 205 | 195 |
空隙 | O | O | O | O | O |
电的 | O | O | O | O | O |
连接状况 | O | O | O | O | O |
随时间的室温稳定性 | O | O | O | O | O |
阶段稳定性 | O | O | O | O | O |
[表4]
如上表3和4所示,确定实施例1至5中提供的用于半导体的粘合剂膜在具有同等水平的熔体粘度的同时表现出高的DSC起始温度。此外,在应用实施例1至5的粘合剂膜的半导体器件中,确定基本没有留下空隙,在100℃下临时接合之后将其放置10分钟的同时ΔH峰的变化量低,使得随时间的流逝没有发生变化,并且既没有发生电故障也没有发生连接状况故障。
相反,在应用比较例1至4的粘合剂膜的半导体器件中,确定不仅在100℃下临时接合之后将其放置10分钟的同时随时间的流逝发生变化,而且即使在室温下储存时反应也快速进行,并且在4周内随时间的流逝发生变化。
此外,确定参照例1的粘合剂膜几乎不固化,容易发生其中接合芯片脱落的现象。因此,发生电故障和连接状况故障,并且进一步实验是不可能的。
Claims (18)
1.一种用于半导体粘合的树脂组合物,包含:热塑性树脂;热固性树脂;固化剂;和由以下化学式1表示的固化催化剂:
[化学式1]
在所述化学式1中,
R1为氢、具有1至10个碳原子的烷基、或具有6至30个碳原子的芳基中之一,
R2为由以下化学式2表示的官能团,
R3和R4中的至少一者为吸电子官能团,而余者为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一,
[化学式2]
在所述化学式2中,
R5为氢、羟基、氨基、卤素基团、具有1至10个碳原子的烷基、具有3至8个碳原子的环烷基、具有2至8个碳原子的杂环烷基、具有6至30个碳原子的芳基、具有6至30个碳原子的杂芳基、或具有1至10个碳原子的烷氧基中之一。
2.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中化学式2中的R5为氢、羟基、或具有1至10个碳原子的烷氧基中之一。
3.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中所述吸电子官能团为由化学式2表示的官能团、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基、或磺酸基中之一。
4.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中化学式1中的R3和R4中的一者为吸电子官能团,而另一者为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基。
5.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中由化学式1表示的所述固化催化剂包括由以下化学式3表示的化合物,
[化学式3]
在所述化学式3中,
R6为氢、具有1至10个碳原子的烷基、或具有6至30个碳原子的芳基中之一,
R7为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基、或具有1至10个碳原子的酯基中之一,
R8和R9中的一者为甲酰基、羧酸基、具有1至10个碳原子的酰胺基、具有1至10个碳原子的酰基、具有1至10个碳原子的酮基、具有1至10个碳原子的酯基、卤素基团、具有1至10个碳原子的卤代烷基、硝基、氰基、磺酰基或磺酸基中之一,而另一者为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
6.根据权利要求5所述的用于半导体粘合的树脂组合物,
其中化学式3中的R8和R9中的一者为硝基,而另一者为氢、具有1至10个碳原子的烷基、具有6至30个碳原子的芳基、或具有1至10个碳原子的烷氧基中之一。
8.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中由化学式1表示的所述固化催化剂与所述热塑性树脂、所述热固性树脂、或所述固化剂中的至少一者在200℃或更高的温度下反应。
9.根据权利要求1所述的用于半导体粘合的树脂组合物,基于100重量份的所述用于半导体粘合的树脂组合物,包含0.05重量份或更多且15重量份或更少的由化学式1表示的所述固化催化剂。
10.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中所述热固性树脂包括选自固体环氧树脂和液体环氧树脂中的至少一者。
11.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中所述热塑性树脂包括选自聚酰亚胺、聚醚酰亚胺、聚酯酰亚胺、聚酰胺、聚醚砜、聚醚酮、聚烯烃、聚氯乙烯、聚酚氧、反应性丁二烯丙烯腈共聚物橡胶和(甲基)丙烯酸酯树脂中的至少一种聚合物树脂。
12.根据权利要求1所述的用于半导体粘合的树脂组合物,
其中所述固化剂包括软化点为70℃或更高的酚树脂。
13.一种用于半导体的粘合剂膜,包含根据权利要求1所述的用于半导体粘合的树脂组合物的固化产物。
14.根据权利要求13所述的用于半导体的粘合剂膜,
其中所述用于半导体的粘合剂膜的熔体粘度为6000Pa.s或更小。
15.根据权利要求13所述的用于半导体的粘合剂膜,
其中所述用于半导体的粘合剂膜的DSC起始温度为185℃或更高。
16.一种用于制造半导体封装的方法,包括使其上层合有根据权利要求13所述的用于半导体的粘合剂膜的基底、和半导体基底经受热压接合的步骤。
17.根据权利要求16所述的用于制造半导体封装的方法,
其中所述热压接合步骤在120℃或更高的高温下进行。
18.一种半导体封装,包括根据权利要求13所述的用于半导体的粘合剂膜。
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JP7150383B2 (ja) | 2022-10-11 |
JP2021530587A (ja) | 2021-11-11 |
TW202104193A (zh) | 2021-02-01 |
KR102584266B1 (ko) | 2023-10-05 |
KR20200130173A (ko) | 2020-11-18 |
US20210292618A1 (en) | 2021-09-23 |
TWI753425B (zh) | 2022-01-21 |
CN112424307B (zh) | 2022-11-15 |
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